CN204103743U - Intelligent power module - Google Patents
Intelligent power module Download PDFInfo
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- CN204103743U CN204103743U CN201420519437.1U CN201420519437U CN204103743U CN 204103743 U CN204103743 U CN 204103743U CN 201420519437 U CN201420519437 U CN 201420519437U CN 204103743 U CN204103743 U CN 204103743U
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Abstract
The utility model discloses a kind of Intelligent Power Module, this Intelligent Power Module comprises the first High pressure areas coefficient, the second High pressure areas coefficient, third high pressure driving chip, the first low-voltage driving chip, the second low-voltage driving chip, the 3rd low-voltage driving chip and metal substrate; Metal substrate be provided with first area for installing the first High pressure areas coefficient, for install the second High pressure areas coefficient second area, for install third high pressure driving chip the 3rd region, for install the first low-voltage driving chip the 4th region, for install the second low-voltage driving chip the 5th region, for installing the 6th region of the 3rd low-voltage driving chip; The line of centres in the line of centres in first area, second area and the 3rd region and the 4th region, the 5th region and the 6th region is parallel, and parallel with metal substrate.The utility model simplifies the layout design of Intelligent Power Module, improves the reliability of Intelligent Power Module simultaneously.
Description
Technical field
The utility model relates to electronic technology field, particularly a kind of Intelligent Power Module.
Background technology
Intelligent Power Module, namely IPM (Intelligent Power Module) is a kind of power drive series products power electronics and integrated circuit technique combined.Intelligent Power Module integrates power device and drive circuit, protective circuit and failure detector circuit etc.; compared with traditional discrete scheme; Intelligent Power Module wins increasing market with its advantage such as high integration, high reliability; be particularly suitable for the frequency converter of drive motors and various inverter; frequency control, metallurgical machinery, electric traction; servo-drive, a kind of desired power level electronic device of frequency-conversion domestic electric appliances.
Fig. 1 is the module assembled structural representation of Intelligent Power Module in prior art, as shown in Figure 1, this Intelligent Power Module to comprise on metal substrate 70, High pressure areas coefficient 10, low-voltage driving chip 20, first on brachium pontis power device 51, second brachium pontis power device 53, first time brachium pontis power device 61, second time brachium pontis power device 62 and the 3rd time brachium pontis power device 63 on brachium pontis power device 52, the 3rd.Wherein, High pressure areas coefficient 10 is for driving on first the switch motion of brachium pontis power device 53 on brachium pontis power device 52 and the 3rd on brachium pontis power device 51, second; Low-voltage driving chip 20 is for driving the switch motion of first time brachium pontis power device, 61, second time brachium pontis power device 62 and the 3rd time brachium pontis power device 63.Metal substrate 70 is rectangle, and metal substrate 70 is provided with for the first area of installation high-voltage driving chip 10 and the second area for installing low-voltage driving chip 20.Wherein, first area and the line of centres of second area and the parallel of metal substrate 70.First area and second area are also rectangle.First area is parallel with the line of centres of second area and the long limit of first area, and parallel with the long limit of second area; Meanwhile, first area is parallel with the line of centres of second area and the long limit of metal substrate 70.High pressure areas coefficient 10 is parallel with the line of centres of low-voltage driving chip 20 and the long limit of High pressure areas coefficient 10, and parallel with the long limit of low-voltage driving chip 20; Meanwhile, High pressure areas coefficient 10 is parallel with the line of centres of low-voltage driving chip 20 and the long limit of metal substrate 70.Metal substrate 70 is also provided with the 3rd region for installing brachium pontis power device 51 on first, for install brachium pontis power device 52 on second the 4th region, for install brachium pontis power device 53 on the 3rd the 5th region, for install first time brachium pontis power device 61 the 6th region, for installing the SECTOR-SEVEN territory of second time brachium pontis power device 62 and the Section Eight territory for installing the 3rd time brachium pontis power device 63.Wherein, the 3rd region, the 4th region and the 5th region are arranged in order the side of the long side direction in first area; 6th region, SECTOR-SEVEN territory and Section Eight territory are arranged in order the side of the long side direction in second area.Further, in the present embodiment, the 3rd region, the 4th region, the 5th region, the 6th region, SECTOR-SEVEN territory and Section Eight territory are arranged in order the same side of the long side direction in first area and second area.High pressure areas coefficient 10 is provided with the first drive output A, the second drive output B and the 3rd drive output C, and low-voltage driving chip 20 is provided with four-wheel drive output D, the 5th drive output E and the 6th drive output F.Wherein, the first drive output A, the second drive output B and the 3rd drive output C to be equidistantly located on High pressure areas coefficient 10 towards first on brachium pontis power device 51, second brachium pontis power device 53 on brachium pontis power device 52 and the 3rd successively; Four-wheel drive output D, the 5th drive output E and the 6th drive output F are equidistantly located at low-voltage driving chip 20 one side towards first time brachium pontis power device, 61, second time brachium pontis power device 62 and the 3rd time brachium pontis power device 63 successively.The drive singal that four-wheel drive output D, the 5th drive output E of the drive singal that the first drive output A, the second drive output B of High pressure areas coefficient 10 and the 3rd drive output C export and low-voltage driving chip 20 and the 6th drive output F export exports the control end of corresponding power device respectively to through a binding line 30, to control the switch motion of power device.
Because the requirement of Intelligent Power Module to drive singal is higher, and the drive singal that binding line 30 pairs of power device control ends input has a certain impact, thus causes the distortion of signal.Three drive output PAD (i.e. first drive output A of High pressure areas coefficient 10, second drive output B and the 3rd drive output C) all concentrate on one side of High pressure areas coefficient 10, three drive output PAD (i.e. four-wheel drive output D of low-voltage driving chip 20, 5th drive output E and the 6th drive output F) all concentrate on one side of low-voltage driving chip 20, thus be difficult to make the length of the binding line 30 between the control end of each power device with respective drive output consistent, the length of the binding line 30 namely under normal circumstances between the control end of each power device and respective drive output is unequal, and the length of binding line 30 is longer, the stray inductance then produced and resistance larger, namely the stray inductance produced by the binding line 30 of different length and resistance there are differences, thus cause the distortion of signal.Further, in order to reduce the length of binding line 30 as far as possible, in Intelligent Power Module shown in Fig. 1, the spacing between each power device can design closer, and is all arranged at the drive output near its correspondence, thus adds the electromagnetic interference between each binding line 30.
In addition, in Intelligent Power Module shown in Fig. 1, High pressure areas coefficient 10 and low-voltage driving chip 20 are equipped with three drive output (namely High pressure areas coefficient 10 and low-voltage driving chip 20 are multichannel driving chip), therefore, drive output PAD position on High pressure areas coefficient 10 and low-voltage driving chip 20 is more, and arranging the impact of domain wiring of PAD position is very large, add the arrangement of numerous pins (scheming non-label) of Intelligent Power Module, the various limiting factors such as metal substrate 50 area and the requirement of live width line-spacing, the surrounding of High pressure areas coefficient 10 and low-voltage driving chip 20 is often connected up numerous and diverse, therefore, even if each power device is distributed in around corresponding drive output, also usually need to be connected through some middle PAD positions, thus further increase family planning inductance, also be unfavorable for the simplification of Intelligent Power Module technique simultaneously.Therefore, Intelligent Power Module shown in Fig. 1 is unfavorable for layout design and reduces costs.
Utility model content
Main purpose of the present utility model is the layout design of simplified intelligent power model and the reliability of raising Intelligent Power Module.
For achieving the above object, the utility model provides a kind of Intelligent Power Module, described Intelligent Power Module comprises the first High pressure areas coefficient for driving brachium pontis power device on first, for driving the second High pressure areas coefficient of brachium pontis power device on second, for driving the third high pressure driving chip of brachium pontis power device on the 3rd, for driving the first low-voltage driving chip of first time brachium pontis power device, for driving the second low-voltage driving chip of second time brachium pontis power device, for driving the 3rd low-voltage driving chip of the 3rd time brachium pontis power device, and for arranging described first High pressure areas coefficient, second High pressure areas coefficient, third high pressure driving chip, first low-voltage driving chip, the metal substrate of the second low-voltage driving chip and the 3rd low-voltage driving chip, wherein,
Described metal substrate be provided with first area for installing described first High pressure areas coefficient, for install described second High pressure areas coefficient second area, for install described third high pressure driving chip the 3rd region, for install described first low-voltage driving chip the 4th region, for install described second low-voltage driving chip the 5th region, for installing the 6th region of described 3rd low-voltage driving chip; The line of centres in the line of centres in described first area, second area and the 3rd region and described 4th region, the 5th region and the 6th region is parallel, and described first area, second area and the line of centres in the 3rd region and the parallel of described metal substrate.
Preferably, described metal substrate is rectangle; Described first area, second area and the line of centres in the 3rd region and the long limit of described metal substrate parallel.
Preferably, described first area, second area and the 3rd region successively equidistantly linear array in the side of the center line of described metal substrate long side direction, described 4th region, the 5th region and the 6th region successively equidistantly linear array in the opposite side of the center line of described metal substrate long side direction.
Preferably, the line of centres in the line of centres in described first area and the described four-range line of centres, described second area and described 5th region and described 3rd region and described 6th region all with the centerline parallel of described metal substrate short side direction.
Preferably, described metal substrate is also provided with the SECTOR-SEVEN territory for installing brachium pontis power device on described first, for install brachium pontis power device on described second Section Eight territory, for install brachium pontis power device on the described 3rd the 9th region, for install described first time brachium pontis power device the tenth region, for installing the 11 region of described second time brachium pontis power device and the territory, No.12 District for installing described 3rd time brachium pontis power device; Wherein,
The line of centres in the line of centres in described SECTOR-SEVEN territory and described tenth region, described Section Eight territory and described 11 region and the line of centres in described 9th region and territory, described No.12 District all with the centerline parallel of described metal substrate short side direction.
Preferably, described first High pressure areas coefficient is provided with the first drive output, described second High pressure areas coefficient comprises the second drive output, driving chip comprises the 3rd drive output to described third high pressure, described first low-voltage driving chip comprises four-wheel drive output, described second low-voltage driving chip comprises the 5th drive output, described 3rd low-voltage driving chip comprises the 6th drive output; Wherein,
Described first drive output is located at described first High pressure areas coefficient one side towards brachium pontis power device on described first; Described second drive output is located at described second High pressure areas coefficient one side towards brachium pontis power device on described second; Described 3rd drive output is located at described third high pressure driving chip one side towards brachium pontis power device on the described 3rd; Described four-wheel drive output is located at described first low-voltage driving chip one side towards described first time brachium pontis power device; Described 5th drive output is located at described second low-voltage driving chip one side towards described second time brachium pontis power device; Described 6th drive output is located at described 3rd low-voltage driving chip one side towards described 3rd time brachium pontis power device.
Preferably, described Intelligent Power Module also comprises the first binding line, the second binding line, the 3rd binding line, the 4th binding line, the 5th binding line and the 6th binding line; Wherein,
One end of described first binding line is connected with described first drive output, and the other end of described first binding line is connected with the control end of brachium pontis power device on described first; One end of described second binding line is connected with described second drive output, and the other end of described second binding line is connected with the control end of brachium pontis power device on described second; One end of described 3rd binding line is connected with described 3rd drive output, and the other end of described 3rd binding line is connected with the control end of brachium pontis power device on the described 3rd;
One end of described 4th binding line is connected with described four-wheel drive output, and the other end of described 4th binding line is connected with the control end of described first time brachium pontis power device; One end of described 5th binding line is connected with described 5th drive output, and the other end of described 5th binding line is connected with the control end of described second time brachium pontis power device; One end of described 6th binding line is connected with described 6th drive output, and the other end of described 6th binding line is connected with the control end of described 3rd time brachium pontis power device.
Preferably, the length of described first binding line, the second binding line, the 3rd binding line, the 4th binding line, the 5th binding line and the 6th binding line is equal.
Preferably, described first binding line, the second binding line, the 3rd binding line, the 4th binding line, the 5th binding line and the 6th binding line are aluminium silicon line; The wire diameter of described first binding line, the second binding line, the 3rd binding line, the 4th binding line, the 5th binding line and the 6th binding line is all more than or equal to 0.0254mm.
Preferably, the described first High pressure areas coefficient one side of described metal substrate, the described second High pressure areas coefficient one side of described metal substrate, the described third high pressure driving chip one side of described metal substrate, the described first low-voltage driving chip one side of described metal substrate, described second low-voltage driving chip the fit one side of described metal substrate of the one side of described metal substrate and described 3rd low-voltage driving chip of fitting of fitting of fitting of fitting of fitting all is deposited with a layer gold; The thickness of described layer gold is more than or equal to 1um.
Preferably, between described first High pressure areas coefficient and described metal substrate, between described second High pressure areas coefficient and described metal substrate, described third high is pressed between driving chip and described metal substrate, between described first low-voltage driving chip and described metal substrate, between described second low-voltage driving chip and described metal substrate and between described 3rd low-voltage driving chip and described metal substrate and is equipped with a tin cream articulamentum.
The Intelligent Power Module that the utility model provides, comprise the first High pressure areas coefficient for driving brachium pontis power device on first, for driving the second High pressure areas coefficient of brachium pontis power device on second, for driving the third high pressure driving chip of brachium pontis power device on the 3rd, for driving the first low-voltage driving chip of first time brachium pontis power device, for driving the second low-voltage driving chip of second time brachium pontis power device, for driving the 3rd low-voltage driving chip of the 3rd time brachium pontis power device, and for arranging the first High pressure areas coefficient, second High pressure areas coefficient, third high pressure driving chip, first low-voltage driving chip, the metal substrate of the second low-voltage driving chip and the 3rd low-voltage driving chip, wherein, metal substrate be provided with first area for installing the first High pressure areas coefficient, for install the second High pressure areas coefficient second area, for install third high pressure driving chip the 3rd region, for install the first low-voltage driving chip the 4th region, for install the second low-voltage driving chip the 5th region, for installing the 6th region of the 3rd low-voltage driving chip, the line of centres in the line of centres in first area, second area and the 3rd region and the 4th region, the 5th region and the 6th region is parallel, and first area, second area and the line of centres in the 3rd region and the parallel of metal substrate.The utility model can the layout design of simplified intelligent power model and the reliability of raising Intelligent Power Module.
Accompanying drawing explanation
Fig. 1 is the module assembled structural representation of Intelligent Power Module in prior art;
Fig. 2 is the module assembled structural representation of the utility model Intelligent Power Module preferred embodiment.
The realization of the utility model object, functional characteristics and advantage will in conjunction with the embodiments, are described further with reference to accompanying drawing.
Embodiment
Should be appreciated that specific embodiment described herein only in order to explain the utility model, and be not used in restriction the utility model.
The utility model provides a kind of Intelligent Power Module.
With reference to the module assembled structural representation that Fig. 2, Fig. 2 are the preferred embodiments of the utility model Intelligent Power Module.
In a preferred embodiment, this Intelligent Power Module to comprise on metal substrate 50, first High pressure areas coefficient 11, second High pressure areas coefficient 12, third high pressure driving chip 13, first low-voltage driving chip 21, second low-voltage driving chip 22, the 3rd low-voltage driving chip 23, first on brachium pontis power device 31, second brachium pontis power device 33, first time brachium pontis power device 41, second time brachium pontis power device 42 and the 3rd time brachium pontis power device 43 on brachium pontis power device 32, the 3rd.In the present embodiment, on first, on brachium pontis power device 31, second, on brachium pontis power device 32, the 3rd, brachium pontis power device 33, first time brachium pontis power device 41, second time brachium pontis power device 42 and the 3rd time brachium pontis power device 43 are IGBT pipe, and the grid of IGBT pipe is control end.
Wherein, above-mentioned first High pressure areas coefficient 11 is for driving the switch motion of brachium pontis power device 31 on first, above-mentioned second High pressure areas coefficient 12 is for driving the switch motion of brachium pontis power device 32 on second, and above-mentioned third high pressure driving chip 13 is for driving the switch motion of brachium pontis power device 33 on the 3rd;
Above-mentioned first low-voltage driving chip 21 is for driving the switch motion of first time brachium pontis power device 41, above-mentioned second low-voltage driving chip 22 is for driving the switch motion of second time brachium pontis power device 42, and above-mentioned 3rd low-voltage driving chip 23 is for driving the switch motion of the 3rd time brachium pontis power device 43.
Metal substrate 50 be provided with first area for installing the first High pressure areas coefficient 11, for install the second High pressure areas coefficient 12 second area, for install third high pressure driving chip 13 the 3rd region, for install the first low-voltage driving chip 21 the 4th region, for installing the 5th region of the second low-voltage driving chip 22 and the 6th region for installing the 3rd low-voltage driving chip 23.Wherein, first area, the line of centres in second area and the 3rd region and the 4th region, the line of centres in the 5th region and the 6th region is parallel, and first area, the line of centres in second area and the 3rd region is parallel with one side of metal substrate 50, namely in the present embodiment, first High pressure areas coefficient 11, the line of centres of the second High pressure areas coefficient 12 and third high pressure driving chip 13 and the first low-voltage driving chip 21, the line of centres of the second low-voltage driving chip 22 and the 3rd low-voltage driving chip 23 is parallel, and the first High pressure areas coefficient 11, the line of centres of the second High pressure areas coefficient 12 and third high pressure driving chip 13 is parallel with one side of metal substrate 50.
In the present embodiment, metal substrate 50 is rectangle, first area, the line of centres in second area and the 3rd region is parallel with the long limit of metal substrate 50, i.e. the first High pressure areas coefficient 11, the line of centres of the second High pressure areas coefficient 12 and third high pressure driving chip 13 is parallel with the long limit of metal substrate 50, again due to the first High pressure areas coefficient 11 in the present embodiment, the line of centres of the second High pressure areas coefficient 12 and third high pressure driving chip 13 and the first low-voltage driving chip 21, the line of centres of the second low-voltage driving chip 22 and the 3rd low-voltage driving chip 23 is parallel, therefore, first low-voltage driving chip 21, the line of centres of the second low-voltage driving chip 22 and the 3rd low-voltage driving chip 23 is also parallel with the long limit of metal substrate 50.
Further, in the present embodiment, first area, second area and the 3rd region successively equidistantly linear array in the side of the center line of metal substrate 50 long side direction, the 4th region, the 5th region and the 6th region successively equidistantly linear array in the opposite side of the center line of metal substrate 50 long side direction.Namely as shown in Figure 2, in the present embodiment, first High pressure areas coefficient 11, second High pressure areas coefficient 12 and third high pressure driving chip 13 successively equidistantly linear array in the side of the center line of metal substrate 50 long side direction, the first low-voltage driving chip 21, second low-voltage driving chip 22 and the 3rd low-voltage driving chip successively equidistantly linear array in the opposite side of the center line of metal substrate 50 long side direction.
Further, in the present embodiment, the line of centres in first area and the four-range line of centres, second area and the 5th region and the line of centres in the 3rd region and the 6th region all with the centerline parallel of metal substrate 50 short side direction.Namely in the present embodiment, the line of centres of the line of centres of the line of centres of the first High pressure areas coefficient 11 and the first low-voltage driving chip 21, the second High pressure areas coefficient 12 and the second low-voltage driving chip 22 and third high pressure driving chip 13 and the 3rd low-voltage driving chip 23 all with the centerline parallel of metal substrate 50 short side direction.
Metal substrate 50 is also provided with the SECTOR-SEVEN territory for installing brachium pontis power device 31 on first, for install brachium pontis power device 32 on second Section Eight territory, for install brachium pontis power device 33 on the 3rd the 9th region, for install first time brachium pontis power device 41 the tenth region, for installing the 11 region of second time brachium pontis power device 42 and the territory, No.12 District for installing the 3rd time brachium pontis power device 43; Wherein, the line of centres in the line of centres in SECTOR-SEVEN territory and the tenth region, Section Eight territory and the 11 region and the line of centres in the 9th region and territory, No.12 District all with the centerline parallel of metal substrate 50 short side direction, namely on first brachium pontis power device 31 and first time brachium pontis power device 41 the line of centres, second on brachium pontis power device 32 and second time brachium pontis power device 42 the line of centres and the 3rd on brachium pontis power device 33 and the 3rd time brachium pontis power device 43 the line of centres all with the centerline parallel of metal substrate 50 short side direction.
And, in the present embodiment, on first, the line of centres of brachium pontis power device 31 and first time brachium pontis power device 41 is positioned at the left side of the line of centres of the first High pressure areas coefficient 11 and the first low-voltage driving chip 21, on second, the line of centres of brachium pontis power device 32 and second time brachium pontis power device 42 is also positioned at the left side of the line of centres of the second High pressure areas coefficient 12 and the second low-voltage driving chip 22, on 3rd, the line of centres of brachium pontis power device 33 and the 3rd time brachium pontis power device 43 is also positioned at the left side of the line of centres of third high pressure driving chip 13 and the 3rd low-voltage driving chip 23.
Further, in the present embodiment, the first High pressure areas coefficient 11 is provided with the first drive output (scheming non-label), the second High pressure areas coefficient 12 is provided with the second drive output (scheming non-label), driving chip 13 is provided with the 3rd drive output (scheming non-label) to third high pressure, the first low-voltage driving chip 21 is provided with four-wheel drive output (scheming non-label), the second low-voltage driving chip 22 is provided with the 5th drive output (scheming non-label), the 3rd low-voltage driving chip 23 is provided with the 6th drive output (scheming non-label); Wherein, above-mentioned first drive output is located at brachium pontis power device 31 on the first High pressure areas coefficient 11 towards first; Second drive output is located at one side of brachium pontis power device 32 on the second High pressure areas coefficient 12 towards second; 3rd drive output is located at third high pressure driving chip 13 one side towards brachium pontis power device 33 on the 3rd; Four-wheel drive output is located at the first low-voltage driving chip 21 one side towards first time brachium pontis power device 41; 5th drive output is located at the second low-voltage driving chip 22 one side towards second time brachium pontis power device 42; 6th drive output is located at the 3rd low-voltage driving chip 23 one side towards the 3rd time brachium pontis power device 43.
Further, the present embodiment Intelligent Power Module also comprises the first binding line 14, second binding line 15, the 3rd binding line 16, the 4th binding line 24, the 5th binding line 25 and the 6th binding line 26.
Wherein, one end of the first binding line 14 is connected with the first drive output of the first High pressure areas coefficient 11, and the other end of the first binding line 14 is connected with the control end of brachium pontis power device 31 on first; One end of second binding line 15 is connected with the second High pressure areas coefficient 12 second drive output, and the other end of the second binding line 15 is connected with the control end of brachium pontis power device 32 on second; One end and the third high of the 3rd binding line 16 press the 3rd drive output of driving chip 13 to be connected, and the other end of the 3rd binding line 16 is connected with the control end of brachium pontis power device 33 on the 3rd;
One end of 4th binding line 24 is connected with the four-wheel drive output of the first low-voltage driving chip 21, and the other end of the 4th binding line 24 is connected with the control end of first time brachium pontis power device 41; One end of 5th binding line 25 is connected with the 5th drive output of the second low-voltage driving chip 22, and the other end of the 5th binding line 25 is connected with the control end of second time brachium pontis power device 42; One end of 6th binding line 26 is connected with the 6th drive output of the 3rd low-voltage driving chip 23, and the other end of the 6th binding line 26 is connected with the control end of the 3rd time brachium pontis power device 43.
Further, in the present embodiment, the identical length etc. of above-mentioned first binding line 14, second binding line 15, the 3rd binding line 16, the 4th binding line 24, the 5th binding line 25 and the 6th binding line 26, namely, in the present embodiment, the first High pressure areas coefficient 11, second High pressure areas coefficient 12, third high pressure driving chip 13, first low-voltage driving chip 21, second low-voltage driving chip 22, the 3rd low-voltage driving chip 23 are all arranged at the equidistant of corresponding power device control end.
Further, in the present embodiment, the first binding line 14, second binding line 15, the 3rd binding line 16, the 4th binding line 24, the 5th binding line 25 and the 6th binding line 26 are aluminium silicon line; Simultaneously, the wire diameter of the first binding line 14, second binding line 15, the 3rd binding line 16, the 4th binding line 24, the 5th binding line 25 and the 6th binding line 26 is all more than or equal to 1mil (0.0254mm), in the present embodiment, the wire diameter of the first binding line 14, second binding line 15, the 3rd binding line 16, the 4th binding line 24, the 5th binding line 25 and the 6th binding line 26 is equal to 1.5mil (0.0381mm), with splicing thread intensity, reduce dead resistance and the stray inductance of each binding line.And, the present embodiment adopts the connected mode of nation alignment by brachium pontis power device 31 on the first High pressure areas coefficient 11 and first, brachium pontis power device 32 on second High pressure areas coefficient 12 and second, third high pressure driving chip 13 is directly connected with brachium pontis power device 33 on the 3rd, simultaneously by the first low-voltage driving chip 21 and first time brachium pontis power device 41, second low-voltage driving chip 22 and second time brachium pontis power device 42, 3rd low-voltage driving chip 23 is directly connected with the 3rd time brachium pontis power device 43, reduce the contact resistance between metal substrate 50 and each nation alignment, simultaneously, the present embodiment can make the drive output of each High pressure areas coefficient to each upper brachium pontis power device control end between circuit distance and each low-voltage driving chip drive output to each lower brachium pontis power device control end between circuit distance the shortest, thus can signal disturbing be reduced, and, the present embodiment is due to the identical length etc. of above-mentioned each binding line, therefore avoid because the circuit between the control end of each power device and corresponding drive output is apart from inconsistent and Signal transmissions distortion phenomenon that is that cause in prior art, thus improve the reliability of Intelligent Power Module.
Further, in the present embodiment, first High pressure areas coefficient 11 one side of metal substrate 50, the second High pressure areas coefficient 12 one side of metal substrate 50, third high pressure driving chip 13 one side of metal substrate 50, the first low-voltage driving chip 21 one side of metal substrate 50, the second low-voltage driving chip 22 the fit one side of metal substrate 50 of the one side of metal substrate 50 and the 3rd low-voltage driving chip 23 of fitting of fitting of fitting of fitting of fitting all is deposited with a layer gold, and, the thickness of this layer gold is more than or equal to 1um, in the present embodiment, the thickness of this layer gold equals 2um, simultaneously, between first High pressure areas coefficient 11 and metal substrate 50, between second High pressure areas coefficient 12 and metal substrate 50, between third high pressure driving chip 13 and metal substrate 50, between first low-voltage driving chip 21 and metal substrate 50, a tin cream articulamentum is equipped with between second low-voltage driving chip 22 and metal substrate 50 and between the 3rd low-voltage driving chip 23 and metal substrate 50, namely the connection between each High pressure areas coefficient and metal substrate 50, and the connection between each low-voltage driving chip and metal substrate 50 all adopts tin cream Reflow Soldering mode to connect, and, brachium pontis power device 31 on above-mentioned first, brachium pontis power device 32 on second, brachium pontis power device 33 on 3rd, first time brachium pontis power device 41, second time brachium pontis power device 42 and the 3rd time connection between brachium pontis power device 43 and metal substrate 50 are also adopt tin cream Reflow Soldering mode to connect, and the connected mode of tin cream Reflow Soldering, relative to elargol bonding way of the prior art (elargol bonding way is the general connected mode of chip and substrate), reduce cost, simultaneously, also the production time is shortened.And, in the present embodiment, above-mentioned first High pressure areas coefficient 11, second High pressure areas coefficient 12 and third high pressure driving chip 13 adopt the manufacture of 650V monolithic integration process technology, and above-mentioned first low-voltage driving chip 21, second low-voltage driving chip 22 and the 3rd low-voltage driving chip 23 adopt the manufacture of 24V monolithic integration process technology.
The first High pressure areas coefficient in the present embodiment Intelligent Power Module, second High pressure areas coefficient, third high pressure driving chip, first low-voltage driving chip, second low-voltage driving chip, 3rd low-voltage driving chip is all only provided with a drive output, namely each driving chip in the present embodiment Intelligent Power Module is single pass driving chip, namely the present embodiment Intelligent Power Module adopts single pass driving chip to carry out driving power device, relative to adopting multichannel driving chip driving power device in prior art, can the layout design of simplified intelligent power model, and can make the drive output of each driving chip to corresponding power device control end between circuit distance the shortest, thus can signal disturbing be reduced.Simultaneously, the present embodiment Intelligent Power Module due to each driving chip drive output to corresponding power device control end between the identical length etc. of binding line, therefore, the present embodiment Intelligent Power Module avoids because the circuit between the control end of each power device and corresponding drive output is apart from inconsistent and Signal transmissions distortion phenomenon that is that cause in prior art, thus improves the reliability of Intelligent Power Module.
These are only preferred embodiment of the present utility model; not thereby the scope of the claims of the present utility model is limited; every utilize the utility model specification and accompanying drawing content to do equivalent structure or equivalent flow process conversion; or be directly or indirectly used in other relevant technical fields, be all in like manner included in scope of patent protection of the present utility model.
Claims (11)
1. an Intelligent Power Module, it is characterized in that, described Intelligent Power Module comprises the first High pressure areas coefficient for driving brachium pontis power device on first, for driving the second High pressure areas coefficient of brachium pontis power device on second, for driving the third high pressure driving chip of brachium pontis power device on the 3rd, for driving the first low-voltage driving chip of first time brachium pontis power device, for driving the second low-voltage driving chip of second time brachium pontis power device, for driving the 3rd low-voltage driving chip of the 3rd time brachium pontis power device, and for arranging described first High pressure areas coefficient, second High pressure areas coefficient, third high pressure driving chip, first low-voltage driving chip, the metal substrate of the second low-voltage driving chip and the 3rd low-voltage driving chip, wherein,
Described metal substrate be provided with first area for installing described first High pressure areas coefficient, for install described second High pressure areas coefficient second area, for install described third high pressure driving chip the 3rd region, for install described first low-voltage driving chip the 4th region, for install described second low-voltage driving chip the 5th region, for installing the 6th region of described 3rd low-voltage driving chip; The line of centres in the line of centres in described first area, second area and the 3rd region and described 4th region, the 5th region and the 6th region is parallel, and described first area, second area and the line of centres in the 3rd region and the parallel of described metal substrate.
2. Intelligent Power Module as claimed in claim 1, it is characterized in that, described metal substrate is rectangle; Described first area, second area and the line of centres in the 3rd region and the long limit of described metal substrate parallel.
3. Intelligent Power Module as claimed in claim 2, it is characterized in that, described first area, second area and the 3rd region successively equidistantly linear array in the side of the center line of described metal substrate long side direction, described 4th region, the 5th region and the 6th region successively equidistantly linear array in the opposite side of the center line of described metal substrate long side direction.
4. Intelligent Power Module as claimed in claim 3, it is characterized in that, the line of centres in described first area and the described four-range line of centres, described second area and described 5th region and the line of centres in described 3rd region and described 6th region all with the centerline parallel of described metal substrate short side direction.
5. Intelligent Power Module as claimed in claim 4, it is characterized in that, described metal substrate is also provided with the SECTOR-SEVEN territory for installing brachium pontis power device on described first, for install brachium pontis power device on described second Section Eight territory, for install brachium pontis power device on the described 3rd the 9th region, for install described first time brachium pontis power device the tenth region, for installing the 11 region of described second time brachium pontis power device and the territory, No.12 District for installing described 3rd time brachium pontis power device; Wherein,
The line of centres in the line of centres in described SECTOR-SEVEN territory and described tenth region, described Section Eight territory and described 11 region and the line of centres in described 9th region and territory, described No.12 District all with the centerline parallel of described metal substrate short side direction.
6. Intelligent Power Module as claimed in claim 5, it is characterized in that, described first High pressure areas coefficient is provided with the first drive output, described second High pressure areas coefficient comprises the second drive output, driving chip comprises the 3rd drive output to described third high pressure, described first low-voltage driving chip comprises four-wheel drive output, described second low-voltage driving chip comprises the 5th drive output, described 3rd low-voltage driving chip comprises the 6th drive output; Wherein,
Described first drive output is located at described first High pressure areas coefficient one side towards brachium pontis power device on described first; Described second drive output is located at described second High pressure areas coefficient one side towards brachium pontis power device on described second; Described 3rd drive output is located at described third high pressure driving chip one side towards brachium pontis power device on the described 3rd; Described four-wheel drive output is located at described first low-voltage driving chip one side towards described first time brachium pontis power device; Described 5th drive output is located at described second low-voltage driving chip one side towards described second time brachium pontis power device; Described 6th drive output is located at described 3rd low-voltage driving chip one side towards described 3rd time brachium pontis power device.
7. Intelligent Power Module as claimed in claim 6, it is characterized in that, described Intelligent Power Module also comprises the first binding line, the second binding line, the 3rd binding line, the 4th binding line, the 5th binding line and the 6th binding line; Wherein,
One end of described first binding line is connected with described first drive output, and the other end of described first binding line is connected with the control end of brachium pontis power device on described first; One end of described second binding line is connected with described second drive output, and the other end of described second binding line is connected with the control end of brachium pontis power device on described second; One end of described 3rd binding line is connected with described 3rd drive output, and the other end of described 3rd binding line is connected with the control end of brachium pontis power device on the described 3rd;
One end of described 4th binding line is connected with described four-wheel drive output, and the other end of described 4th binding line is connected with the control end of described first time brachium pontis power device; One end of described 5th binding line is connected with described 5th drive output, and the other end of described 5th binding line is connected with the control end of described second time brachium pontis power device; One end of described 6th binding line is connected with described 6th drive output, and the other end of described 6th binding line is connected with the control end of described 3rd time brachium pontis power device.
8. Intelligent Power Module as claimed in claim 7, is characterized in that, the length of described first binding line, the second binding line, the 3rd binding line, the 4th binding line, the 5th binding line and the 6th binding line is equal.
9. Intelligent Power Module as claimed in claim 8, it is characterized in that, described first binding line, the second binding line, the 3rd binding line, the 4th binding line, the 5th binding line and the 6th binding line are aluminium silicon line; The wire diameter of described first binding line, the second binding line, the 3rd binding line, the 4th binding line, the 5th binding line and the 6th binding line is all more than or equal to 0.0254mm.
10. Intelligent Power Module as claimed in claim 9, it is characterized in that, the described first High pressure areas coefficient one side of described metal substrate, the described second High pressure areas coefficient one side of described metal substrate, the described third high pressure driving chip one side of described metal substrate, the described first low-voltage driving chip one side of described metal substrate, described second low-voltage driving chip the fit one side of described metal substrate of the one side of described metal substrate and described 3rd low-voltage driving chip of fitting of fitting of fitting of fitting of fitting all is deposited with a layer gold; The thickness of described layer gold is more than or equal to 1um.
11. Intelligent Power Module as claimed in claim 10, it is characterized in that, between described first High pressure areas coefficient and described metal substrate, between described second High pressure areas coefficient and described metal substrate, described third high presses between driving chip and described metal substrate, between described first low-voltage driving chip and described metal substrate, between described second low-voltage driving chip and described metal substrate and between described 3rd low-voltage driving chip and described metal substrate and is equipped with a tin cream articulamentum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201420519437.1U CN204103743U (en) | 2014-09-10 | 2014-09-10 | Intelligent power module |
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| CN201420519437.1U CN204103743U (en) | 2014-09-10 | 2014-09-10 | Intelligent power module |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110868086A (en) * | 2019-11-28 | 2020-03-06 | 广东美的制冷设备有限公司 | Intelligent power module and air conditioner |
| CN110942998A (en) * | 2019-12-06 | 2020-03-31 | 西安中车永电电气有限公司 | Chip welding method of IPM module |
-
2014
- 2014-09-10 CN CN201420519437.1U patent/CN204103743U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110868086A (en) * | 2019-11-28 | 2020-03-06 | 广东美的制冷设备有限公司 | Intelligent power module and air conditioner |
| CN110942998A (en) * | 2019-12-06 | 2020-03-31 | 西安中车永电电气有限公司 | Chip welding method of IPM module |
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