CN203849466U - Multi-channel parallel optical component for high-speed transmission - Google Patents
Multi-channel parallel optical component for high-speed transmission Download PDFInfo
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- CN203849466U CN203849466U CN201420259094.XU CN201420259094U CN203849466U CN 203849466 U CN203849466 U CN 203849466U CN 201420259094 U CN201420259094 U CN 201420259094U CN 203849466 U CN203849466 U CN 203849466U
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Abstract
The utility model discloses a multi-channel parallel optical component for high-speed transmission and an assembly method thereof. The optical component comprises a parallel optical fiber coupling alignment component, a substrate, a chip carrier, a photoelectric chip array group and a drive circuit chip group. The photoelectric chip array group is mounted onto the substrate. The drive circuit chip group is mounted onto the substrate. The middle portion of the chip carrier is provided with a through hole. The chip carrier is mounted onto the substrate. The photoelectric chip array group and the drive circuit chip group pass through the through hole. The difference between the thickness of the drive circuit chip group and the thickness of the chip carrier is a set distance. The drive circuit chip group is wire bond with the photoelectric chip array group and circuit lines around the through hole in the chip carrier separately. The photoelectric chip array group is coupled and aligned with the parallel optical fiber coupling alignment component. The component can be used to reduce the bond wire length between the drive circuit chip group and the photoelectric chip array group/the circuit lines on the chip carrier to reduce the parasitic inductance and capacitance generated by the bond wires and improve the high-speed signal transmission capability.
Description
Technical field
The utility model relates to technical field of optical fiber communication, specifically relates to a kind of Multi-path parallel optical component for high-speed transfer.
Background technology
In order to adapt to the day by day increase of people to communication bandwidth requirements, increase transmission capacity and reduce the most important thing that power consumption is fiber optic communication field, parallel optical fibre technology is growing thus.Utilize at present the major product of parallel optical fibre technology to have QSFP optical module, CFP optical module, thunder and lightning (Thunderbolt) cable, the active HDMI cable of light etc.The principal character of parallel optical technology is in an independent device or module, to have multidiameter delay laser instrument or parallel optoelectronic diode to aim at multi-channel optical fibre.Multi-path parallel optical component or module for high-speed transfer generally include multidiameter delay laser array (VCSEL chip array) and driver IC (drive circuit chip group) thereof, parallel optoelectronic diode array (PD chip array) and amplifier IC (drive circuit chip group), the port number of the port number of VCSEL chip array and PD chip array is conventionally by the type decided of optical assembly or module.Be generally used for the optical assembly of 40G/100G high-speed transfer, require to possess coupling fiber alignment precision high simultaneously, rapid heat dissipation, can anti-electromagnetic interference (EMI) and be easy to produce, and this has higher requirement to design.
At present, at the Multi-path parallel optical component for high-speed transfer, normally first by drive circuit chip group and corresponding VCSEL chip array or/and PD chip array to be mounted on chip carrier (pcb board) upper, then the mode by Bonding (wire bonding) routing by drive circuit chip group and accordingly VCSEL chip array or/and PD chip array and pcb board power on, route couples together.Due to the restriction (live width line-spacing is 4mil/4mil conventionally) of pcb board manufacturing technology and the reasons such as radian that exceed the generation of pcb board routing, often make from drive circuit chip group to VCSEL chip array or/and the routing of the circuit line PD chip array and pcb board distance surpasses 1mm, and 40G/100G signal transmission requires length of wire bonding should not surpass 1mm, otherwise easily produce some stray capacitances and inductance, thereby signal is distorted in the process of transmission, affect communication quality.And by drive circuit chip group and corresponding VCSEL chip array or/and PD chip array be mounted on chip carrier (pcb board), and the heat that 40G/100G signal transmission produces is all from drive circuit chip group pattern and photoelectric chip array group, there is the problem of chip cooling.
Summary of the invention
In order to solve the problems of the technologies described above, the utility model proposes a kind of Multi-path parallel optical component for high-speed transfer, this assembly can reduce the length of wire bonding between the circuit line on drive circuit chip group and photoelectric chip array group and chip carrier, greatly reduce routing and produce stray inductance and electric capacity, promote the ability of high speed transmission of signals, thereby be applied to the high-speed transfer of 40G/100G, and this assembly have rapid heat dissipation, the anti-electromagnetic interference (EMI) of energy and be easy to the advantages such as production.
The technical solution of the utility model is achieved in that
For a Multi-path parallel optical component for high-speed transfer, comprise parallel optical fibre be coupled and aligned assembly, liner plate, chip carrier, photoelectric chip array group and for driving the drive circuit chip group of described photoelectric chip array group; Described photoelectric chip array group is mounted on described liner plate, and described drive circuit chip group is mounted on described liner plate near described photoelectric chip array group one side; The middle part of described chip carrier has the through hole that a shape after mounting with described drive circuit chip group and described photoelectric chip array group and size match; Described chip carrier is mounted on described liner plate, and described photoelectric chip array group and described drive circuit chip group are arranged in described through hole, and the thickness of described drive circuit chip group and the thickness of described chip carrier differ setpoint distance; Described drive circuit chip group is connected with the circuit line routing of described photoelectric chip array group and described the above bore periphery of chip carrier respectively; Described photoelectric chip array group and the described parallel optical fibre assembly that is coupled and aligned is coupled and aligned.
As further improvement of the utility model, the difference range that the thickness of described drive circuit chip group deducts the thickness of described chip carrier is-0.5mm～+ 0.5mm.
As further improvement of the utility model, between described photoelectric chip array group and described liner plate, be provided with heat sink, the thickness that the thickness of described photoelectric chip array group adds the above thickness of heat sink and described drive circuit chip group differs setpoint distance.
As further improvement of the utility model, the difference range that the thickness of described photoelectric chip array group adds the thickness that deducts described drive circuit chip group after the above thickness of heat sink is-0.5mm～+ 0.5mm.
As further improvement of the utility model, described photoelectric chip array group comprises a VCSEL chip array and a PD chip array; Described drive circuit chip group comprises the driver IC that drives described VCSEL chip array and the amplifier IC that drives described PD chip array.
As further improvement of the utility model, the material of described liner plate is aluminium nitride or the metal with high thermal conductivity.
As further improvement of the utility model, described chip carrier is flexible PCB, and described liner plate top is fixed in one end pressing of described flexible PCB, and described flexible PCB other end top is placed with several BGA and plants ball bonding pad.
As further improvement of the utility model, the described parallel optical fibre assembly that is coupled and aligned comprises lens arra, the MPO joints of optical fibre and positioned at intervals are arranged in the multidiameter delay optical fiber in the described MPO joints of optical fibre, described lens arra comprises a lens body, vertical direction is embedded in the second lens arra face corresponding with described photoelectric chip array group in described lens body, horizontal direction is embedded in the first lens array surface corresponding with described multidiameter delay optical fiber in described lens body and the light path that makes that is embedded in described lens body is rolled over the reflecting surface turning 90 degrees between described the second lens arra face and described first lens array surface, described lens arra and the described MPO joints of optical fibre position by guide posts and the guide hole fixing mode of planting, and the photoelectric chip array group second lens arra face corresponding with it is coupled and aligned.
As further improvement of the utility model, separately be provided with a radome with accommodation space for shield electromagnetic interference, described radome is fixedly connected with described chip carrier, and the be coupled and aligned front end of assembly, described photoelectric chip array group and described drive circuit chip group of described parallel optical fibre is placed in described accommodation space.
The beneficial effects of the utility model are: the utility model provides a kind of Multi-path parallel optical component for high-speed transfer, by offer a through hole on chip carrier, after being mounted on liner plate, drive circuit chip group and photoelectric chip array group (PD chip array is or/and VCSEL chip array) be arranged in this through hole, because through hole and drive circuit chip group and photoelectric chip array group shape and the size after mounting matches, the shape and size that are through hole be able to be held drive circuit chip group and photoelectric chip array group, and the thickness of the thickness of chip carrier and drive circuit chip group differs setpoint distance, be the thickness that the thickness of chip carrier is similar to drive circuit chip group, therefore, can be when drive circuit chip group be connected with the circuit line routing of bore periphery on chip carrier guaranty money's line length the shortest, the relative conventional solution of this technical scheme is directly mounted on drive circuit chip group on chip carrier, gold thread length in the time of can reducing drive circuit chip group and circuit line routing on chip carrier is connected, meet 40G/100G high-speed transfer for the requirement of length of wire bonding, avoid producing because length of wire bonding is long some stray capacitances and inductance, high speed signal is distorted in the process of transmission, affect communication quality, therefore, the utility model can effectively promote the ability of high speed transmission of signals.Preferably, to deduct the difference range of the thickness of chip carrier be-0.5mm～+ 0.5mm to the thickness of drive circuit chip group.During concrete enforcement, can the upper surface of the upper surface of drive circuit chip group and chip carrier be designed in same plane or make the upper surface of chip carrier a little less than the upper surface of drive circuit chip group, can guarantee that like this routing between them is short as much as possible, thereby improve the speed that can transmit.Preferably, be provided with heat sink between photoelectric chip array group and liner plate, the thickness of photoelectric chip array group adds that the thickness of heat sink and the thickness of drive circuit chip group differ setpoint distance.Like this, by adjusting the thickness of heat sink, can make the thickness of photoelectric chip array group add that the thickness of heat sink and the thickness of drive circuit chip group differ setpoint distance, the thickness of photoelectric chip array group adds that the thickness of heat sink is similar to the thickness of drive circuit chip group; So that it is the shortest to control spun gold length when photoelectric chip array group and drive circuit chip group are carried out routing bonding, further reach and reduce spun gold inductance, improve the object of the high frequency performance of optical assembly.Preferably, the difference range that the thickness of photoelectric chip array group adds the thickness that deducts drive circuit chip group after the thickness of heat sink is-0.5mm～+ 0.5mm.During concrete enforcement, can the upper surface of the upper surface of photoelectric chip array group and drive circuit chip group be designed in same plane or make the upper surface of photoelectric chip array group a little less than the upper surface of drive circuit chip group, can guarantee that like this routing between them is short as much as possible, thereby improve the speed that can transmit.Preferably, photoelectric chip array group comprises a VCSEL chip array and a PD chip array; Drive circuit chip group comprises the driver IC that drives VCSEL chip array and the amplifier IC (TIA) that drives PD chip array.Like this, by VCSEL chip array and PD chip array are set simultaneously, can make the utility model Multi-path parallel optical component there is transmission-receiving function simultaneously.Preferably, the material of liner plate is aluminium nitride or the metal with high thermal conductivity.Like this, when liner plate is used for locating photoelectric chip array group and drive circuit chip group, the function also with the heat radiation of helping, so that the heat that photoelectric chip produces can be led away rapidly, make the performance of optical assembly more stable, concrete while implementing to select the high material of temperature conductivity, can select AIN heat dissipation ceramic sheet.Preferably, chip carrier is flexible PCB, and liner plate top is fixed in the pressing of flexible PCB one end, and flexible PCB other end top is placed with several BGA and plants ball bonding pad.The several BGA that arrange plant ball bonding pad for welding with external interface unit, form electric input/output port, by high concentrated, the highdensity wire laying mode of BGA, and on pad, plant ball, can guarantee the continuity of circuit board impedance, and greatly save the space taking, solve a difficult problem of welding under high density structures.Preferably, the parallel optical fibre assembly that is coupled and aligned comprises that lens arra, the MPO joints of optical fibre and positioned at intervals are arranged in the multidiameter delay optical fiber in the MPO joints of optical fibre, to realize being coupled and aligned of photoelectric chip group and multidiameter delay optical fiber.Concrete enforcement, photoelectric chip array group can be designed to the VCSEL chip array of 4 passages and the PD chip array of 4 passages, VCSEL chip array and PD chip array are mounted on liner plate in mode side by side, multidiameter delay optical fiber can be designed to 8 passage fibre ribbons, being coupled and aligned of 4 passage fibre ribbons and VCSEL chip array wherein, another 4 passage fibre ribbons and PD chip array are coupled and aligned.Lens arra is by the light path 90-degree rotation of fibre ribbon, so that photoelectric chip array group is aimed at multidiameter delay coupling fiber.The MPO joints of optical fibre can be by fibre ribbon with side by side fixing of the channel pitch of 0.25mm.Preferably, be separately provided with a radome with accommodation space for shield electromagnetic interference, radome is fixedly connected with chip carrier, and be coupled and aligned front end, photoelectric chip array group and the drive circuit chip group of assembly of parallel optical fibre is placed in accommodation space.In the process of high speed transmission of signals, if any extraneous electromagnetic signal, it is disturbed, the transmission quality that affects high speed signal by serious, produces a large amount of error codes, by radome is set, can play the effect of shielding outside electromagnetic interference, thereby improve the transmission performance of optical assembly.During concrete enforcement, radome can be formed by copper nickel plating, and copper is high performance shielding material, and nickel can prevent its oxidation, and both combinations can produce better effect to shielding outside electromagnetic interference.
Accompanying drawing explanation
Fig. 1 is the utility model decomposition texture schematic diagram;
Fig. 2 is the utility model unitized construction schematic diagram;
Fig. 3 is that the utility model combines another visual angle structural representation;
Fig. 4 is photoelectric chip array group in the utility model, drive circuit chip group, chip carrier and liner plate assembling schematic diagram;
Fig. 5 is A place structure for amplifying schematic diagram in Fig. 4;
Fig. 6 is Fig. 4 structure and the parallel optical fibre assembled schematic diagram that is coupled and aligned.
By reference to the accompanying drawings, make the following instructions:
1---parallel optical fibre be coupled and aligned assembly 11---lens arra
12---MPO joints of optical fibre 13---multidiameter delay optical fiber
111---guide posts 112---guide hole
2---liner plate 3---chip carrier
31---through hole 4---photoelectric chip array group
41---VCSEL chip array 42---PD chip array
5---drive circuit chip group 51---driver IC
52---amplifier IC 6---heat sink
7---BGA plants ball bonding pad 8---radome
Embodiment
As shown in Figure 1, Figure 2, shown in Fig. 3, Fig. 4, Fig. 5 and Fig. 6, for a Multi-path parallel optical component for high-speed transfer, comprise parallel optical fibre be coupled and aligned assembly 1, liner plate 2, chip carrier 3 (PCB adagio or hardboard), photoelectric chip array group 4 (as VCSEL chip array or/and PD chip array) and for the drive circuit chip group 5 of photoelectric chip array group as described in driving; Described photoelectric chip array group is mounted on described liner plate, and described drive circuit chip group is mounted on described liner plate near described photoelectric chip array group one side; The middle part of described chip carrier has the through hole 31 that a shape after mounting with described drive circuit chip group and described photoelectric chip array group and size match; Described chip carrier is mounted on described liner plate, and described photoelectric chip array group and described drive circuit chip group are arranged in described through hole, and the thickness of described drive circuit chip group and the thickness of described chip carrier differ setpoint distance; Described drive circuit chip group is connected with the circuit line routing of described photoelectric chip array group and described the above bore periphery of chip carrier respectively; Described photoelectric chip array group and the described parallel optical fibre assembly that is coupled and aligned is coupled and aligned.Like this, by offer a through hole on chip carrier, after being mounted on liner plate, drive circuit chip group and photoelectric chip array group (PD chip array is or/and VCSEL chip array) be arranged in this through hole, because through hole and drive circuit chip group and photoelectric chip array group shape and the size after mounting matches, the shape and size that are through hole be able to be held drive circuit chip group and photoelectric chip array group, and the thickness of the thickness of chip carrier and drive circuit chip group differs setpoint distance, be the thickness that the thickness of chip carrier is similar to drive circuit chip group, therefore, can be when drive circuit chip group be connected with the circuit line routing of bore periphery on chip carrier guaranty money's line length the shortest, the relative conventional solution of this technical scheme is directly mounted on drive circuit chip group on chip carrier, gold thread length in the time of can reducing drive circuit chip group and circuit line routing on chip carrier is connected, meet 40G/100G high-speed transfer for the requirement of length of wire bonding, avoid producing because length of wire bonding is long some stray capacitances and inductance, high speed signal is distorted in the process of transmission, affect communication quality, therefore, the utility model can effectively promote the ability of high speed transmission of signals.
Preferably, to deduct the difference range of the thickness of described chip carrier be-0.5mm～+ 0.5mm to the thickness of described drive circuit chip group.During concrete enforcement, can the upper surface of the upper surface of drive circuit chip group and chip carrier be designed in same plane or make the upper surface of chip carrier a little less than the upper surface of drive circuit chip group, can guarantee that like this routing between them is short as much as possible, thereby improve the speed that can transmit.
Preferably, between described photoelectric chip array group and described liner plate, be provided with heat sink 6, the thickness that the thickness of described photoelectric chip array group adds the above thickness of heat sink and described drive circuit chip group differs setpoint distance.Like this, by adjusting the thickness of heat sink, can make the thickness of photoelectric chip array group add that the thickness of heat sink and the thickness of drive circuit chip group differ setpoint distance, the thickness of photoelectric chip array group adds that the thickness of heat sink is similar to the thickness of drive circuit chip group; So that it is the shortest to control spun gold length when photoelectric chip array group and drive circuit chip group are carried out routing bonding, further reach and reduce spun gold inductance, improve the object of the high frequency performance of optical assembly.
Preferably, the difference range that the thickness of described photoelectric chip array group adds the thickness that deducts described drive circuit chip group after the above thickness of heat sink is-0.5mm～+ 0.5mm.During concrete enforcement, can the upper surface of the upper surface of photoelectric chip array group and drive circuit chip group be designed in same plane or make the upper surface of photoelectric chip array group a little less than the upper surface of drive circuit chip group, can guarantee that like this routing between them is short as much as possible, thereby improve the speed that can transmit.
Preferably, described photoelectric chip array group comprises a VCSEL chip array 41 and a PD chip array 42; Described drive circuit chip group comprises the driver IC 51 that drives described VCSEL chip array and the amplifier IC52 (TIA) that drives described PD chip array.Like this, by VCSEL chip array and PD chip array are set simultaneously, can make the utility model Multi-path parallel optical component there is transmission-receiving function simultaneously.
Preferably, the material of described liner plate is aluminium nitride or the metal with high thermal conductivity.Like this, when liner plate is used for locating photoelectric chip array group and drive circuit chip group, the function also with the heat radiation of helping, so that the heat that photoelectric chip produces can be led away rapidly, make the performance of optical assembly more stable, concrete while implementing to select the high material of temperature conductivity, can select AIN heat dissipation ceramic sheet.
Preferably, described chip carrier is flexible PCB, and described liner plate top is fixed in one end pressing of described flexible PCB, and described flexible PCB other end top is placed with several BGA and plants ball bonding pad 7.The several BGA that arrange plant ball bonding pad for welding with external interface unit, form electric input/output port, by high concentrated, the highdensity wire laying mode of BGA, and on pad, plant ball, can guarantee the continuity of circuit board impedance, and greatly save the space taking, solve a difficult problem of welding under high density structures.
Preferably, the described parallel optical fibre assembly that is coupled and aligned comprises lens arra 11, the MPO joints of optical fibre 12 and positioned at intervals are arranged in the multidiameter delay optical fiber 13 in the described MPO joints of optical fibre, described lens arra comprises a lens body, vertical direction is embedded in the second lens arra face corresponding with described photoelectric chip array group in described lens body, horizontal direction is embedded in the first lens array surface corresponding with described multidiameter delay optical fiber in described lens body and the light path that makes that is embedded in described lens body is rolled over the reflecting surface turning 90 degrees between described the second lens arra face and described first lens array surface, described lens arra and the described MPO joints of optical fibre position by the fixing mode of guide posts 111 and guide hole 112 plants, and the photoelectric chip array group second lens arra face corresponding with it is coupled and aligned.Concrete enforcement, photoelectric chip array group can be designed to the VCSEL chip array of 4 passages and the PD chip array of 4 passages, VCSEL chip array and PD chip array are mounted on liner plate in mode side by side, multidiameter delay optical fiber can be designed to 8 passage fibre ribbons, being coupled and aligned of 4 passage fibre ribbons and VCSEL chip array wherein, another 4 passage fibre ribbons and PD chip array are coupled and aligned.Lens arra is by the light path 90-degree rotation of fibre ribbon, so that photoelectric chip array group is aimed at multidiameter delay coupling fiber.The MPO joints of optical fibre can be by fibre ribbon with side by side fixing of the channel pitch of 0.25mm.
Preferably, separately be provided with a radome with accommodation space 8 for shield electromagnetic interference, described radome is fixedly connected with described chip carrier, and the be coupled and aligned front end of assembly, described photoelectric chip array group and described drive circuit chip group of described parallel optical fibre is placed in described accommodation space.In the process of high speed transmission of signals, if any extraneous electromagnetic signal, it is disturbed, the transmission quality that affects high speed signal by serious, produces a large amount of error codes, by radome is set, can play the effect of shielding outside electromagnetic interference, thereby improve the transmission performance of optical assembly.During concrete enforcement, radome can be formed by copper nickel plating, and copper is high performance shielding material, and nickel can prevent its oxidation, and both combinations can produce better effect to shielding outside electromagnetic interference.
With multidiameter delay light transmitting-receiving subassembly, be assembled into example below, further illustrate by reference to the accompanying drawings the technical solution of the utility model:
As Fig. 1, shown in Fig. 2 and Fig. 3, multidiameter delay light transmitting-receiving subassembly comprises the parallel optical fibre assembly that is coupled and aligned, middle part has the liner plate of through hole, chip carrier, photoelectric chip array group, drive circuit chip group, heat sink and radome, wherein chip carrier is flexible PCB, photoelectric chip array group comprises a VCSEL chip array and a PD chip array, drive circuit chip group comprises the driver IC that drives VCSEL chip array and the amplifier IC that drives PD chip array, coupling fiber alignment components comprises lens arra, the MPO joints of optical fibre and multidiameter delay optical fiber, heat sink is AIN heat dissipation ceramic sheet.
Referring to Fig. 4, Fig. 5 and Fig. 6, first, AIN heat dissipation ceramic sheet is pressed to the flexible PCB back side, then, by the through hole that stays on flexible PCB, VCSEL chip array and driver IC thereof and PD chip array and amplifier IC thereof are bonded on AIN heat dissipation ceramic sheet, the heat producing due to 40G/100G is all from drive circuit chip group and photoelectric chip array group, and the heat-conducting effect of AIN heat dissipation ceramic sheet is remarkable, thereby they are directly linked into an integrated entity and can reach the effect that reduces chip temperature, in the present embodiment, respectively to have the distance between 4 tunnels and every two-way be 0.25mm for VCSEL chip array and PD chip array, and under the help of equipment, guarantee that the distance of pasting between VESEL chip array and PD chip array is 1.25mm.In said structure due to the amplifier IC of the driver IC of VCSEL chip array and PD chip array is all arranged in through hole reserved on flexible PCB, and make their upper surface and the upper surface limit of the flexible PCB plane that coexists in when assembling, therefore, in the time of can making driver IC and amplifier IC the circuit line routing corresponding with the bore periphery of flexible PCB be connected respectively, guarantee that the routing between them is short as much as possible, thereby improve the speed that can transmit, avoid the optical assembly of 40G/100G high-speed transfer because routing is long, to produce some stray capacitances and inductance, avoid signal to distort in the process of transmission, affect communication quality.The present embodiment can guarantee that length of wire bonding is no more than 0.3mm, greatly reduces it and produces stray inductance, has promoted the ability of signal transmission.
Referring to Fig. 6 and Fig. 2, the lens arra on 8 tunnels is fixed with bonding agent by bullport and guide post and the MPO joints of optical fibre that are positioned with 8 road parallel optical fibres, then drive VCSEL chip array luminous, the polymerization of scioptics array laser 90-degree rotation enter in parallel optical fibre array, and with utilizing monitoring of equipment to aim at coupling, after coupling finishes, radome in welding.Radome in this example is comprised of copper nickel plating, and wherein copper is high performance shielding material, and nickel can prevent its oxidation, and both combinations can produce better effect to shielding outside electromagnetic interference, thereby improves the transmission performance of light transmitting-receiving subassembly.
Referring to Fig. 1, in the present embodiment, on flexible PCB, taked high concentrated, the highdensity wire laying mode of BGA, and plant ball on BGA pad, distance between BGA pad is 15 μ m, BGA pad diameter is 8 μ m, this highdensity arrangement mode not only can guarantee the continuity of circuit board impedance, and can greatly save shared space, and the mode of this plantation ball can solve the difficult problem that client welds under high density structures.
Above embodiment is with reference to accompanying drawing, and preferred embodiment of the present utility model is elaborated.Those skilled in the art is by above-described embodiment being carried out to modification or the change on various forms, but do not deviate from the situation of essence of the present utility model, within all dropping on protection domain of the present utility model.
Claims (9)
1. for a Multi-path parallel optical component for high-speed transfer, it is characterized in that: comprise parallel optical fibre be coupled and aligned assembly (1), liner plate (2), chip carrier (3), photoelectric chip array group (4) and for driving the drive circuit chip group (5) of described photoelectric chip array group; Described photoelectric chip array group is mounted on described liner plate, and described drive circuit chip group is mounted on described liner plate near described photoelectric chip array group one side; The middle part of described chip carrier has the through hole (31) that a shape after mounting with described drive circuit chip group and described photoelectric chip array group and size match; Described chip carrier is mounted on described liner plate, and described photoelectric chip array group and described drive circuit chip group are arranged in described through hole, and the thickness of described drive circuit chip group and the thickness of described chip carrier differ setpoint distance; Described drive circuit chip group is connected with the circuit line routing of described photoelectric chip array group and described the above bore periphery of chip carrier respectively; Described photoelectric chip array group and the described parallel optical fibre assembly that is coupled and aligned is coupled and aligned.
2. the Multi-path parallel optical component for high-speed transfer according to claim 1, is characterized in that: the difference range that the thickness of described drive circuit chip group deducts the thickness of described chip carrier is-0.5mm～+ 0.5mm.
3. the Multi-path parallel optical component for high-speed transfer according to claim 2, it is characterized in that: between described photoelectric chip array group and described liner plate, be provided with heat sink (6), the thickness that the thickness of described photoelectric chip array group adds the above thickness of heat sink and described drive circuit chip group differs setpoint distance.
4. the Multi-path parallel optical component for high-speed transfer according to claim 3, is characterized in that: the difference range that the thickness of described photoelectric chip array group adds the thickness that deducts described drive circuit chip group after the above thickness of heat sink is-0.5mm～+ 0.5mm.
5. the Multi-path parallel optical component for high-speed transfer according to claim 4, is characterized in that: described photoelectric chip array group comprises a VCSEL chip array (41) and a PD chip array (42); Described drive circuit chip group comprises the driver IC (51) that drives described VCSEL chip array and the amplifier IC (52) that drives described PD chip array.
6. the Multi-path parallel optical component for high-speed transfer according to claim 5, is characterized in that: the material of described liner plate is aluminium nitride or the metal with high thermal conductivity.
7. the Multi-path parallel optical component for high-speed transfer according to claim 6, it is characterized in that: described chip carrier is flexible PCB, described liner plate top is fixed in one end pressing of described flexible PCB, and described flexible PCB other end top is placed with several BGA and plants ball bonding pad (7).
8. the Multi-path parallel optical component for high-speed transfer according to claim 7, it is characterized in that: the described parallel optical fibre assembly that is coupled and aligned comprises lens arra (11), the MPO joints of optical fibre (12) and positioned at intervals are arranged in the multidiameter delay optical fiber (13) in the described MPO joints of optical fibre, described lens arra comprises a lens body, vertical direction is embedded in the second lens arra face corresponding with described photoelectric chip array group in described lens body, horizontal direction is embedded in the first lens array surface corresponding with described multidiameter delay optical fiber in described lens body and the light path that makes that is embedded in described lens body is rolled over the reflecting surface turning 90 degrees between described the second lens arra face and described first lens array surface, described lens arra and the described MPO joints of optical fibre position by guide posts (111) and guide hole (112) the fixing mode of planting, and the photoelectric chip array group second lens arra face corresponding with it is coupled and aligned.
9. the Multi-path parallel optical component for high-speed transfer according to claim 8, it is characterized in that: be separately provided with a radome with accommodation space (8) for shield electromagnetic interference, described radome is fixedly connected with described chip carrier, and the be coupled and aligned front end of assembly, described photoelectric chip array group and described drive circuit chip group of described parallel optical fibre is placed in described accommodation space.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420259094.XU CN203849466U (en) | 2014-05-20 | 2014-05-20 | Multi-channel parallel optical component for high-speed transmission |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420259094.XU CN203849466U (en) | 2014-05-20 | 2014-05-20 | Multi-channel parallel optical component for high-speed transmission |
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| Publication Number | Publication Date |
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| CN203849466U true CN203849466U (en) | 2014-09-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420259094.XU Withdrawn - After Issue CN203849466U (en) | 2014-05-20 | 2014-05-20 | Multi-channel parallel optical component for high-speed transmission |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103984066A (en) * | 2014-05-20 | 2014-08-13 | 昆山柯斯美光电有限公司 | Multi-path parallel optical component for high-speed transmission and assembling method thereof |
| CN107546568A (en) * | 2017-08-31 | 2018-01-05 | 新华三技术有限公司 | Pcb board component and light emission component |
-
2014
- 2014-05-20 CN CN201420259094.XU patent/CN203849466U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103984066A (en) * | 2014-05-20 | 2014-08-13 | 昆山柯斯美光电有限公司 | Multi-path parallel optical component for high-speed transmission and assembling method thereof |
| CN103984066B (en) * | 2014-05-20 | 2016-08-24 | 昆山柯斯美光电有限公司 | Multi-path parallel optical component and assemble method thereof for high-speed transfer |
| CN107546568A (en) * | 2017-08-31 | 2018-01-05 | 新华三技术有限公司 | Pcb board component and light emission component |
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