CN203553127U - 轻薄型低电感功率模块 - Google Patents

轻薄型低电感功率模块 Download PDF

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CN203553127U
CN203553127U CN201320659438.1U CN201320659438U CN203553127U CN 203553127 U CN203553127 U CN 203553127U CN 201320659438 U CN201320659438 U CN 201320659438U CN 203553127 U CN203553127 U CN 203553127U
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麻长胜
王晓宝
赵善麒
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JIANGSU MACMIC TECHNOLOGY Co Ltd
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    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
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    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Abstract

本实用新型涉及一种轻薄型低电感功率模块，包括外壳和覆金属陶瓷基板，半导体芯片固定在覆金属陶瓷基板上，至少两个电极端子和至少一个信号端子嵌接在外壳上，各电极端子和各信号端子通过导电件与覆金属陶瓷基板连接，各电极端子和各信号端子延伸外壳，电极端子的安装面与覆金属陶瓷基板之间的距离h在7～9mm，盖板注塑在外壳上和覆金属陶瓷基板上，外壳底部沿对角设有限位柱，覆金属陶瓷基板上设有下定位孔，盖板上设有与下定位孔对应的上定位孔。本实用新型将盖板与外壳注塑集成一体并与覆金属陶瓷基板密封连接，使盖板、外壳、各端子和覆金属陶瓷基板集成一体，体积小，简化制作工艺，获取了较小的封装电感。

Description

轻薄型低电感功率模块
技术领域
本实用新型涉及一种轻薄型低电感功率模块，属于功率半导体模块制造领域。
背景技术
功率模块用于逆变焊机、各种开关电源的控制器以及电动汽车控制器等，其主要作用是将输入的直流电转变为三相交流电输出。传统功率模块包括多个半导体芯片以及电极端子和信号端子，多个半导体芯片以及电极端子和信号端子焊接在覆金属陶瓷基板上的金属层上，通过覆金属陶瓷基板上有图形的铜箔进行互连并实现电路连接，而覆金属陶瓷基板再固定在铜底板上，铜底板与外壳固定连接，通过灌胶工艺对覆金属陶瓷基板上的半导体芯片进行密封保护，而功率模块灌胶封装工艺不仅步骤复杂，而且成本相对较高。再则目前功率模块的铜底板与电极端子之间的距离大多超过28mm，功率模块体积较大，占用空间大，随着电源系统功率密度的提高，已不能满足功率模块向轻薄型和紧凑型要求，而且现有的封装结构也无法得到更小的寄生电感。
发明内容
本实用新型的目的是提供一种体积小，能简化制作工艺，获取了较小封装电感的轻薄型低电感功率模块。
本实用新型为达到上述目的的技术方案是：一种轻薄型低电感功率模块，包括外壳和覆金属陶瓷基板，半导体芯片固定在覆金属陶瓷基板上，其特征在于：至少两个电极端子和至少一个信号端子嵌接在外壳上，各电极端子和各信号端子通过导电件与覆金属陶瓷基板连接，各电极端子和各信号端子延伸出外壳，电极端子的安装面与覆金属陶瓷基板之间的距离h在7～9mm，盖板注塑固定在外壳上和覆金属陶瓷基板上，外壳底部沿对角设有限位柱，覆金属陶瓷基板上设有下定位孔，盖板上设有与下定位孔对应的上定位孔。
实用新型将盖板注塑固定在外壳和覆金属陶瓷基板上，能将覆金属陶瓷基板内侧的半导体芯片以及各电极端子和各信号端子密封，使盖板、外壳和覆金属陶瓷基板集成一体，既保护半导体芯片，也省去盖板与外壳粘接工序和灌胶保护工序，简化制作工艺，提高封装质量。本实用新型的功率模块高度只有传统功率模块高度的1/4左右，功率模块体积小，而且省去了铜底板，外型轻薄，能满足功率模块向轻薄型和紧凑型要求，既节省了空间，又获取了较小的封装电感，减小了半导体芯片到散热器的距离，实现减小热阻的目的。
附图说明
下面结合附图对本实用新型的实施例作进一步的详细描述。
图1是本实用新型轻薄型低电感功率模块的结构示意图。
图2是图1的A向结构示意图。
图3是本实用新型轻薄型低电感功率模块的剖面结构示意图。
图4是本实用新型轻薄型低电感功率模块去除盖板的结构示意图。
其中：1—盖板，1-1—上定位孔，2—外壳，2-1—限位柱，3—电极端子，4—信号端子，5—覆金属陶瓷基板，5-1—下定位孔，6—半导体芯片，7—导电件。
具体实施方式
见图1～4的示，本实用新型的轻薄型低电感功率模块，包括外壳2和覆金属陶瓷基板5，半导体芯片6固定在覆金属陶瓷基板5上，覆金属陶瓷基板5的金属层设有互连图形以实现电路连接。本实用新型至少两个电极端子3和至少一个信号端子4嵌接在外壳2上，见图1、2所示，本实用新型采用三个电极端子3和四个信号端子4，各电极端子3和各信号端子4上通过导电件7与覆金属陶瓷基板5连接，该导电件7为铝丝，电极端子3和信号端子4通过铝丝与覆金属陶瓷基板5键合。
见图1～4所示，本实用新型各电极端子3和各信号端子4延伸出外壳2，电极端子3的安装面与覆金属陶瓷基板5之间的距离h在7～9mm，如电极端子3的安装面与覆金属陶瓷基板5之间的距离h在8mm，故而能大幅度降低功率模块的高度，使本实用新型功率模块高度仅是传统功率模块高度的1/4左右，外型轻薄，提高功率密度，并减小模块的内部互联电感。
见图1～3所示，本实用新型盖板1注塑固定在外壳2和覆金属陶瓷基板5上，能将盖板1与外壳2和覆金属陶瓷基板5集成一体，对覆金属陶瓷基板5内侧的半导体芯片6以及各电极端子3和各信号端子4进行密封保护，省去了灌胶工艺。
见1～4所示，本实用新型外壳2底部沿对角设有限位柱2-1，安装时起到限位作用，方便安装。本实用新型覆金属陶瓷基板5上设有下定位孔5-1，盖板1上设有与下定位孔5-1对应的上定位孔1-1，且覆金属陶瓷基板5的下定位孔5-1的中心线与盖板1上的上定位孔1-1的中心线重合。

Claims (3)

1.一种轻薄型低电感功率模块，包括外壳(2)和覆金属陶瓷基板(5)，半导体芯片(6)固定在覆金属陶瓷基板(5)上，其特征在于：至少两个电极端子(3)和至少一个信号端子(4)嵌接在外壳(2)上，各电极端子(3)和各信号端子(4)通过导电件(7)与覆金属陶瓷基板(5)连接，各电极端子(3)和各信号端子(4)延伸出外壳(2)，电极端子(3)的安装面与覆金属陶瓷基板(5)之间的距离h在7～9mm，盖板(1)注塑固定在外壳(2)和覆金属陶瓷基板(5)上，外壳(2)底部沿对角设有限位柱(2-1)，覆金属陶瓷基板(5)上设有下定位孔(5-1)，盖板(1)上设有与下定位孔(5-1)对应的上定位孔(1-1)。
2.根据权利要求1所述的轻薄型低电感功率模块，其特征在于：所述的导电件(7)为铝丝，电极端子(3)和信号端子(4)通过铝丝与覆金属陶瓷基板(5)键合。
3.根据权利要求1所述的轻薄型低电感功率模块，其特征在于：所述的覆金属陶瓷基板(5)的下定位孔(5-1)的中心线与盖板(1)上的上定位孔(1-1)的中心线重合。
CN201320659438.1U 2013-10-24 2013-10-24 轻薄型低电感功率模块 Expired - Lifetime CN203553127U (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017071976A1 (en) 2015-10-29 2017-05-04 Abb Schweiz Ag Semiconductor module
CN111128898A (zh) * 2019-12-13 2020-05-08 深圳基本半导体有限公司 一种压接型SiC功率模块封装结构

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017071976A1 (en) 2015-10-29 2017-05-04 Abb Schweiz Ag Semiconductor module
CN108475668A (zh) * 2015-10-29 2018-08-31 Abb瑞士股份有限公司 半导体模块
US10276552B2 (en) 2015-10-29 2019-04-30 Abb Schweiz Ag Semiconductor module
CN108475668B (zh) * 2015-10-29 2019-09-27 Abb瑞士股份有限公司 半导体模块
CN111128898A (zh) * 2019-12-13 2020-05-08 深圳基本半导体有限公司 一种压接型SiC功率模块封装结构
CN111128898B (zh) * 2019-12-13 2021-07-30 深圳基本半导体有限公司 一种压接型SiC功率模块封装结构

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