CN203535978U - ITO (Indium Tin Oxide) conducting film for touch screen - Google Patents
ITO (Indium Tin Oxide) conducting film for touch screen Download PDFInfo
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- CN203535978U CN203535978U CN201320631683.1U CN201320631683U CN203535978U CN 203535978 U CN203535978 U CN 203535978U CN 201320631683 U CN201320631683 U CN 201320631683U CN 203535978 U CN203535978 U CN 203535978U
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Abstract
The utility model relates to the technical field of conducting films for touch screens, and particularly relates to an ITO (Indium Tin Oxide) conducting film for a touch screen. The ITO conducting film comprises a resin matrix of 100-150 micrometers, a first ITO layer of 8-10 nanometers, a second ITO layer of 6-8 nanometers, a third ITO layer of 4-6 nanometers and a fourth ITO layer of 2-4 nanometers, wherein the first ITO layer, the second ITO layer, the third ITO layer and the fourth ITO layer are sequentially deposited on the resin matrix. According to the utility model, by arrangement of the first ITO layer, the second ITO layer, the third ITO layer and the fourth ITO layer, gradual improvement of a crystal structure is promoted, the ITO is subjected to a crystallization process each time after being deposited, and the perfect crystallization of the ITO layer is effectively promoted. In order to reduce the influence of thickness on the crystallization, the thicknesses of the first ITO layer, the second ITO layer, the third ITO layer and the fourth ITO layer are sequentially reduced and further improvement of the crystallization process is facilitated. The prepared ITO conducting film for the touch screen has the advantages of high transmittance, low resistivity and good chemical stability.
Description
Technical field
The utility model relates to touch-screen conducting film technical field, is specifically related to a kind of touch-screen ITO conducting film.
Background technology
Touch-screen is a kind of remarkable input equipment that improves man machine operation interface, have intuitively, simply, advantage efficiently.Touch-screen obtains a wide range of applications in many electronic products, such as mobile phone, PDA, multimedia, public information inquiry system etc.Touch-screen is commonly used ITO conducting film in making, and ITO conducting film refers to the method that adopts magnetron sputtering, the high-tech product that sputter transparent indium tin oxide (ITO) conductive film coating obtains on transparent organic film material.ITO(Indium Tin Oxides, indium tin metal oxide), as a kind of typical N type oxide semiconductor, be used in widely the fields such as mobile phone, MP3, MP4, digital camera.
Existing ITO film, resistivity is high, see through rate variance and poor chemical stability, can not meet production requirement.
Summary of the invention
The purpose of this utility model is for the deficiencies in the prior art, and the touch-screen that a kind of resistivity is low, transmitance good and chemical stability is good ITO conducting film is provided.
To achieve these goals, the utility model adopts following technical scheme: a kind of touch-screen ITO conducting film, comprise resin matrix and be deposited on successively an ITO layer, the 2nd ITO layer, the 3rd ITO layer and the 4th ITO layer of resin matrix, the thickness of described resin matrix is 100-150 micron, and the thickness of an ITO layer is that the thickness of 8-10 nanometer, the 2nd ITO layer is that the thickness of 6-8 nanometer, the 3rd ITO layer is that the thickness of 4-6 nanometer and the 4th ITO layer is 2-4 nanometer.
Preferably, the thickness of described resin matrix is 120-150 micron, and the thickness of an ITO layer is that the thickness of 8-9 nanometer, the 2nd ITO layer is that the thickness of 6-7 nanometer, the 3rd ITO layer is that the thickness of 4-5 nanometer and the 4th ITO layer is 2-3 nanometer.
More preferred, the thickness of described resin matrix is 100 microns, and the thickness of an ITO layer is that the thickness of 10 nanometers, the 2nd ITO layer is that the thickness of 8 nanometers, the 3rd ITO layer is that the thickness of 6 nanometers and the 4th ITO layer is 4 nanometers.
Wherein, described resin matrix is pet resin matrix.
Or described resin matrix is that Thickness Ratio is that pet resin matrix and the pressing of poly-imide resin matrix of 3:1 forms.
Preferably, described resin matrix and an ITO interlayer also deposit the alundum (Al2O3) optical layers of 20-30 nanometer.
The utility model compared with prior art, beneficial effect is: the utility model is by arranging an ITO layer, the 2nd ITO layer, the 3rd ITO layer and the 4th ITO layer, impel crystal phase structure gradual perfection of the present utility model, after the each deposition of ITO, all can experience crystallization process, effectively promote the perfect crystallization of ITO layer.The utility model is in order to reduce the impact of thickness on crystallization, the thickness of the one ITO layer, the 2nd ITO layer, the 3rd ITO layer and the 4th ITO layer is reduced successively, be conducive to the further perfect of crystallization process, the touch-screen that the utility model makes is high by ITO conducting film transmitance, resistivity is low, chemical stability good.
Accompanying drawing explanation
Fig. 1 is the structural representation of the utility model embodiment 1.
Fig. 2 is the structural representation of the utility model embodiment 2.
Fig. 3 is the structural representation of the utility model embodiment 3.
reference numeral
1---pet resin matrix
2---poly-imide resin matrix
3---an ITO layer
4---the 2nd ITO layer
5---the 3rd ITO layer
6---the 4th ITO layer
7---alundum (Al2O3) optical layers.
Embodiment
For the ease of those skilled in the art's understanding, below in conjunction with embodiment and accompanying drawing, the utility model is further described, the content that execution mode is mentioned is not to restriction of the present utility model.
See Fig. 1, a kind of touch-screen ITO conducting film, comprise resin matrix and be deposited on successively an ITO layer 3, the 2nd ITO layer 4, the 3rd ITO layer 5 and the 4th ITO layer 6 of resin matrix, the thickness of described resin matrix is 100 microns, and the thickness of an ITO layer 3 is that the thickness of 8 nanometers, the 2nd ITO layer 4 is that the thickness of 6 nanometers, the 3rd ITO layer 5 is that the thickness of 4 nanometers and the 4th ITO layer 6 is 2 nanometers.
Wherein, described resin matrix is pet resin matrix 1.
A preparation method for ITO conducting film for touch-screen, it comprises following preparation process successively:
Steps A, resin substrate is put into the load chamber of magnetron sputtering apparatus, after sealing, vacuumized;
Step B, resin substrate are transported to sputtering chamber after being heated to 200 ℃, adopt magnetron sputtering mode to deposit for the first time, obtain, after an ITO layer 3, being transported to cooling chamber and being cooled to room temperature;
Step C, be transported to sputtering chamber after having the resin substrate of an ITO layer 3 to be heated to 220 ℃ sputter, adopt magnetron sputtering mode to deposit for the second time, obtain, after the 2nd ITO layer 4, being transported to cooling chamber and being cooled to room temperature;
Step D, be transported to sputtering chamber after having the resin substrate of the 2nd ITO layer 4 to be heated to 230 ℃ sputter, adopt magnetron sputtering mode to deposit for the third time, obtain, after the 3rd ITO layer 5, being transported to cooling chamber and being cooled to room temperature;
Step e, be transported to sputtering chamber after having the resin substrate of three ITO layers to be heated to 240 ℃ sputter, adopt magnetron sputtering mode to carry out deposition the 4th time, obtain, after the 4th ITO layer 6, being transported to cooling chamber and being cooled to room temperature;
Step F, cooled substrate in step e is put into relief chamber, unloading piece, obtains a kind of touch-screen ITO conducting film.
Wherein, the tin oxide that the indium oxide that described magnetron sputtering apparatus indium oxide target used is 94.5% by weight percentage and weight percentage are 5.5% forms.
Wherein, the cooling of described step B is specifically divided into:
First stage is cooling: the resin substrate that sputter is had to an ITO layer 3 is cooled to 150 ℃ with the speed of 8 ℃/h;
Insulation: 150 ℃ of insulations 2 hours;
Second stage is cooling: then with the speed of 8 ℃/h, be cooled to room temperature.
Wherein, the cooling of described step C is specifically divided into:
First stage is cooling: the resin substrate that sputter is had to a 2nd ITO layer 4 is cooled to 150 ℃ with the speed of 7 ℃/h;
Insulation: 150 ℃ of insulations 2 hours;
Second stage is cooling: then with the speed of 6 ℃/h, be cooled to room temperature.
Wherein, the cooling of described step D is specifically divided into:
First stage is cooling: the resin substrate that sputter is had to a 3rd ITO layer 5 is cooled to 150 ℃ with the speed of 6 ℃/h;
Insulation: 150 ℃ of insulations 2 hours;
Second stage is cooling: then with the speed of 5 ℃/h, be cooled to room temperature.
Wherein, the cooling of described step e is specifically divided into:
First stage is cooling: the resin substrate that sputter is had to a 4th ITO layer 6 is cooled to 150 ℃ with the speed of 4 ℃/h;
Insulation: 150 ℃ of insulations 2 hours;
Second stage is cooling: then with the speed of 2 ℃/h, be cooled to room temperature.
See Fig. 2, a kind of touch-screen ITO conducting film, comprise resin matrix and be deposited on successively an ITO layer 3, the 2nd ITO layer 4, the 3rd ITO layer 5 and the 4th ITO layer 6 of resin matrix, the thickness of described resin matrix is 130 microns, and the thickness of an ITO layer 3 is that the thickness of 9 nanometers, the 2nd ITO layer 4 is that the thickness of 7 nanometers, the 3rd ITO layer 5 is that the thickness of 5 nanometers and the 4th ITO layer 6 is 3 nanometers.
Described resin matrix is that Thickness Ratio is that pet resin matrix 1 and poly-imide resin matrix 2 pressings of 3:1 form.
A preparation method for ITO conducting film for touch-screen, it comprises following preparation process successively:
Steps A, resin substrate is put into the load chamber of magnetron sputtering apparatus, after sealing, vacuumized;
Step B, resin substrate are transported to sputtering chamber after being heated to 210 ℃, adopt magnetron sputtering mode to deposit for the first time, obtain, after an ITO layer 3, being transported to cooling chamber and being cooled to room temperature;
Step C, be transported to sputtering chamber after having the resin substrate of an ITO layer 3 to be heated to 220 ℃ sputter, adopt magnetron sputtering mode to deposit for the second time, obtain, after the 2nd ITO layer 4, being transported to cooling chamber and being cooled to room temperature;
Step D, be transported to sputtering chamber after having the resin substrate of the 2nd ITO layer 4 to be heated to 230 ℃ sputter, adopt magnetron sputtering mode to deposit for the third time, obtain, after the 3rd ITO layer 5, being transported to cooling chamber and being cooled to room temperature;
Step e, be transported to sputtering chamber after having the resin substrate of three ITO layers to be heated to 240 ℃ sputter, adopt magnetron sputtering mode to carry out deposition the 4th time, obtain, after the 4th ITO layer 6, being transported to cooling chamber and being cooled to room temperature;
Step F, cooled substrate in step e is put into relief chamber, unloading piece, obtains a kind of touch-screen ITO conducting film.
Wherein, the tin oxide that the indium oxide that described magnetron sputtering apparatus indium oxide target used is 94.5% by weight percentage and weight percentage are 5.5% forms.
Wherein, the cooling of described step B is specifically divided into:
First stage is cooling: the resin substrate that sputter is had to an ITO layer 3 is cooled to 151 ℃ with the speed of 9 ℃/h;
Insulation: 151 ℃ of insulations 3 hours;
Second stage is cooling: then with the speed of 8 ℃/h, be cooled to room temperature.
Wherein, the cooling of described step C is specifically divided into:
First stage is cooling: the resin substrate that sputter is had to a 2nd ITO layer 4 is cooled to 151 ℃ with the speed of 8 ℃/h;
Insulation: 151 ℃ of insulations 3 hours;
Second stage is cooling: then with the speed of 6 ℃/h, be cooled to room temperature.
Wherein, the cooling of described step D is specifically divided into:
First stage is cooling: the resin substrate that sputter is had to a 3rd ITO layer 5 is cooled to 151 ℃ with the speed of 6 ℃/h;
Insulation: 151 ℃ of insulations 3 hours;
Second stage is cooling: then with the speed of 5 ℃/h, be cooled to room temperature.
Wherein, the cooling of described step e is specifically divided into:
First stage is cooling: the resin substrate that sputter is had to a 4th ITO layer 6 is cooled to 151 ℃ with the speed of 4 ℃/h;
Insulation: 151 ℃ of insulations 3 hours;
Second stage is cooling: then with the speed of 3 ℃/h, be cooled to room temperature.
See Fig. 3, a kind of touch-screen ITO conducting film, comprise resin matrix and be deposited on successively an ITO layer 3, the 2nd ITO layer 4, the 3rd ITO layer 5 and the 4th ITO layer 6 of resin matrix, the thickness of described resin matrix is 150 microns, and the thickness of an ITO layer 3 is that the thickness of 10 nanometers, the 2nd ITO layer 4 is that the thickness of 7 nanometers, the 3rd ITO layer 5 is that the thickness of 5 nanometers and the 4th ITO layer 6 is 2 nanometers.
Wherein, described resin matrix is pet resin matrix 1.
Described resin matrix and 3, an ITO layer also deposit the alundum (Al2O3) optical layers 7 of 20-30 nanometer, and in the present embodiment, the thickness of alundum (Al2O3) optical layers 7 is 25 nanometers.
A preparation method for ITO conducting film for touch-screen, it comprises following preparation process successively:
Steps A, resin substrate is put into the load chamber of magnetron sputtering apparatus, after sealing, vacuumized;
Step B, resin substrate are transported to sputtering chamber after being heated to 200 ℃, adopt magnetron sputtering mode to deposit for the first time, obtain, after an ITO layer 3, being transported to cooling chamber and being cooled to room temperature;
Step C, be transported to sputtering chamber after having the resin substrate of an ITO layer 3 to be heated to 210 ℃ sputter, adopt magnetron sputtering mode to deposit for the second time, obtain, after the 2nd ITO layer 4, being transported to cooling chamber and being cooled to room temperature;
Step D, be transported to sputtering chamber after having the resin substrate of the 2nd ITO layer 4 to be heated to 220 ℃ sputter, adopt magnetron sputtering mode to deposit for the third time, obtain, after the 3rd ITO layer 5, being transported to cooling chamber and being cooled to room temperature;
Step e, be transported to sputtering chamber after having the resin substrate of three ITO layers to be heated to 240 ℃ sputter, adopt magnetron sputtering mode to carry out deposition the 4th time, obtain, after the 4th ITO layer 6, being transported to cooling chamber and being cooled to room temperature;
Step F, cooled substrate in step e is put into relief chamber, unloading piece, obtains a kind of touch-screen ITO conducting film.
Wherein, the tin oxide that the indium oxide that described magnetron sputtering apparatus indium oxide target used is 94.5% by weight percentage and weight percentage are 5.5% forms.
Wherein, the cooling of described step B is specifically divided into:
First stage is cooling: the resin substrate that sputter is had to an ITO layer 3 is cooled to 150 ℃ with the speed of 10 ℃/h;
Insulation: 155 ℃ of insulations 4 hours;
Second stage is cooling: then with the speed of 10 ℃/h, be cooled to room temperature.
Wherein, the cooling of described step C is specifically divided into:
First stage is cooling: the resin substrate that sputter is had to a 2nd ITO layer 4 is cooled to 150 ℃ with the speed of 8 ℃/h;
Insulation: 150 ℃ of insulations 4 hours;
Second stage is cooling: then with the speed of 8 ℃/h, be cooled to room temperature.
Wherein, the cooling of described step D is specifically divided into:
First stage is cooling: the resin substrate that sputter is had to a 3rd ITO layer 5 is cooled to 150 ℃ with the speed of 6 ℃/h;
Insulation: 150 ℃ of insulations 4 hours;
Second stage is cooling: then with the speed of 6 ℃/h, be cooled to room temperature.
Wherein, the cooling of described step e is specifically divided into:
First stage is cooling: the resin substrate that sputter is had to a 4th ITO layer 6 is cooled to 150 ℃ with the speed of 5 ℃/h;
Insulation: 150 ℃ of insulations 4 hours;
Second stage is cooling: then with the speed of 4 ℃/h, be cooled to room temperature.
The touch-screen that embodiment 1-3 is made carries out following performance test with ITO conducting film, refers to table 1.
(1) transmitance is measured:
The transmitance that adopts lens reflecting rate analyzer (model SNo 11A1002) mensuration sample after baking of OLYMPUS Corporation USPM-LH, sweep limits is 380nm-780nm.
(2) sheet resistance is measured:
Adopt the impedance of Mitsubishi MCP-T360 Low ESR analysis-e/or determining sample.
(3) adhesive force is measured
Adopt ZEHNTNER hundred lattice cuttves to mark the lattice 100 that is spaced apart 1 millimeter of uniform size at sample surfaces, with specific adhesive tape, firmly stick on and draw on lattice surface, firmly tear, the lattice number that statistics film comes off.
(4) acidproof mensuration
After sample is placed in to standard etching solution solution 20min completely, take out, measuring etching front and back sample sheet resistance has unchanged.
By table 1 can find out that the touch-screen that the utility model makes is high by ITO conducting film transmitance, resistivity is low, adhesive force, chemical stability is good.
Finally should be noted that; above embodiment is only in order to illustrate the technical solution of the utility model; but not restriction to the utility model protection range; although the utility model has been done to explain with reference to preferred embodiment; those of ordinary skill in the art is to be understood that; can modify or be equal to replacement the technical solution of the utility model, and not depart from essence and the scope of technical solutions of the utility model.
Claims (6)
1. a touch-screen ITO conducting film, it is characterized in that: comprise resin matrix and be deposited on successively an ITO layer, the 2nd ITO layer, the 3rd ITO layer and the 4th ITO layer of resin matrix, the thickness of described resin matrix is 100-150 micron, and the thickness of an ITO layer is that the thickness of 8-10 nanometer, the 2nd ITO layer is that the thickness of 6-8 nanometer, the 3rd ITO layer is that the thickness of 4-6 nanometer and the 4th ITO layer is 2-4 nanometer.
2. a kind of touch-screen ITO conducting film claimed in claim 1, it is characterized in that: the thickness of described resin matrix is 120-150 micron, the thickness of an ITO layer is that the thickness of 8-9 nanometer, the 2nd ITO layer is that the thickness of 6-7 nanometer, the 3rd ITO layer is that the thickness of 4-5 nanometer and the 4th ITO layer is 2-3 nanometer.
3. a kind of touch-screen ITO conducting film according to claim 1, it is characterized in that: the thickness of described resin matrix is 100 microns, the thickness of an ITO layer is that the thickness of 10 nanometers, the 2nd ITO layer is that the thickness of 8 nanometers, the 3rd ITO layer is that the thickness of 6 nanometers and the 4th ITO layer is 4 nanometers.
4. a kind of touch-screen ITO conducting film according to claim 1, is characterized in that: described resin matrix is pet resin matrix.
5. a kind of touch-screen ITO conducting film according to claim 1, it is characterized in that: described resin matrix is that Thickness Ratio is that pet resin matrix and the pressing of poly-imide resin matrix of 3:1 forms, and a described ITO layer is deposited on poly-imide resin matrix.
6. a kind of touch-screen ITO conducting film according to claim 1, is characterized in that: described resin matrix and an ITO interlayer also deposit the alundum (Al2O3) optical layers of 20-30 nanometer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320631683.1U CN203535978U (en) | 2013-10-12 | 2013-10-12 | ITO (Indium Tin Oxide) conducting film for touch screen |
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| CN201320631683.1U CN203535978U (en) | 2013-10-12 | 2013-10-12 | ITO (Indium Tin Oxide) conducting film for touch screen |
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| CN203535978U true CN203535978U (en) | 2014-04-09 |
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| CN201320631683.1U Expired - Fee Related CN203535978U (en) | 2013-10-12 | 2013-10-12 | ITO (Indium Tin Oxide) conducting film for touch screen |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103489505A (en) * | 2013-10-12 | 2014-01-01 | 东莞市平波电子有限公司 | ITO (Indium Tin Oxide) conducting film for touch screen and preparation method thereof |
| CN107863182A (en) * | 2016-11-04 | 2018-03-30 | 江苏日久光电股份有限公司 | A kind of touch-screen double-deck ITO conductive films and preparation method thereof |
-
2013
- 2013-10-12 CN CN201320631683.1U patent/CN203535978U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103489505A (en) * | 2013-10-12 | 2014-01-01 | 东莞市平波电子有限公司 | ITO (Indium Tin Oxide) conducting film for touch screen and preparation method thereof |
| CN103489505B (en) * | 2013-10-12 | 2016-02-24 | 东莞市平波电子有限公司 | A kind of touch-screen ITO conducting film and preparation method thereof |
| CN107863182A (en) * | 2016-11-04 | 2018-03-30 | 江苏日久光电股份有限公司 | A kind of touch-screen double-deck ITO conductive films and preparation method thereof |
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