CN107863182A - A kind of touch-screen double-deck ITO conductive films and preparation method thereof - Google Patents
A kind of touch-screen double-deck ITO conductive films and preparation method thereof Download PDFInfo
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- CN107863182A CN107863182A CN201610962342.0A CN201610962342A CN107863182A CN 107863182 A CN107863182 A CN 107863182A CN 201610962342 A CN201610962342 A CN 201610962342A CN 107863182 A CN107863182 A CN 107863182A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
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- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing Of Electric Cables (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a kind of touch-screen with double-deck ITO conductive films, including substrate and is respectively deposited at the upper ITO electrode layer of substrate both sides and lower ITO electrode layer；The upper ITO electrode layer includes the first ITO electrode layer, the second ITO electrode layer and the 3rd ITO electrode layer being cascading and thickness increases successively, and the 3rd ITO electrode layer deposits on the substrate；The lower ITO electrode layer includes the 4th ITO electrode layer, the 5th ITO electrode layer and the 6th ITO electrode layer being cascading and thickness is sequentially reduced, and the 4th ITO electrode layer deposits on the substrate.The present invention also provides preparation method of the above-mentioned touch-screen with double-deck ITO conductive films.It has the advantages that resistivity is low, light transmission rate is high and service life is long.
Description
Technical field
The invention belongs to touch-screen conductive film technical field, the double-deck ITO conductive films of more particularly to a kind of touch-screen
And preparation method thereof.
Background technology
Touch-screen obtains great application on mobile phone, tablet personal computer and other display screens, and it significantly changes as one kind
The input equipment of kind man machine operation interface, have it is directly perceived it is simple, reaction speed is fast, save space with it is easily operated exchange etc. it is excellent
Point.Touch-screen commonly uses ITO conductive films in preparing, ITO conductive films refer to the method using magnetron sputtering, transparent organic
The nesa coating that transparent ITO conductive films coating obtains is sputtered on thin-film material.ITO（Indium Tin Oxides, indium tin
Metal oxide）, as a kind of N-type oxide semiconductor of use, it is widely used in touch-screen field.Existing ITO
Conductive film, due to influence of its thickness to crystallization process, high resistivity, light transmission rate difference be present and service life is short etc. asks
Topic.
The content of the invention
Based on this, the present invention provides a kind of touch-screen double-deck ITO conductive films and preparation method thereof, and it has resistivity
Low, the advantages that light transmission rate is high and service life is long.
The technical scheme is that：A kind of double-deck ITO conductive films of touch-screen, including substrate and it is respectively deposited at base
The upper ITO electrode layer of piece both sides and lower ITO electrode layer；The upper ITO electrode layer includes being cascading and thickness increases successively
Big the first ITO electrode layer, the second ITO electrode layer and the 3rd ITO electrode layer, the 3rd ITO electrode layer are deposited on described substrate
On；The lower ITO electrode layer includes the 4th ITO electrode layer, the 5th ITO electrode layer being cascading and thickness is sequentially reduced
With the 6th ITO electrode layer, the 4th ITO electrode layer deposits on the substrate.
Wherein, substrate is non-conductive, by ITO electrode layer and lower ITO electrode layer in the design of substrate both sides, forms condenser type
Touch-screen film, by by upper ITO electrode layer be designed to the 3rd ITO electrode layer, the second ITO electrode layer that thickness is sequentially reduced and
First ITO electrode layer, lower ITO electrode layer are designed to the 4th ITO electrode layer, the 5th ITO electrode layer and that thickness is sequentially reduced
Six ITO electrode layers, influence of the thickness to ito film crystallization process is avoided, improve the crystal phase structure of ito film, led with improving whole ITO
The light transmission rate of conductive film, its resistivity is reduced, and increase its service life, any point can bear more than 8 thousands of times touching
Touch.
In the present invention, it is preferable that the substrate thickness is 150-200 microns, and substrate uses polyethylene terephthalate
Fat resin.Polyethylene terephthalate's resin has preferable translucidus, but translucidus increase and reduced with thickness, thickness
150-200 microns are designed as, translucidus requirement can be met, and can meets intensity and toughness reguirements, reaches translucidus and use
The best of breed in life-span.
In a preferred embodiment, the electrode protection of insulation is equipped with outside first ITO electrode layer and the 6th ITO electrode layer
Layer.The design of electrode protecting layer further improves service life.
Further, the 3rd ITO electrode layer is identical with the thickness of the 4th ITO electrode layer, is 14-16 nanometers；It is described
Second ITO electrode layer is identical with the thickness of the 5th ITO electrode layer, is 11-13 nanometers；First ITO electrode layer and the 6th ITO
The thickness of electrode layer is identical, is 8-10 nanometers.The ITO electrode layer of substrate both sides uses the structure design of symmetrical expression, and strictly controls
The thickness of each tunic is made, influence of the thickness to crystallization process is further reduced, to reduce its resistivity and lift its translucidus.
The present invention also provides a kind of preparation method of touch-screen with double-deck ITO conductive films, including following process：
Step A, substrate is positioned over to the load chamber of magnetron sputtering apparatus, vacuumized after sealing；
Step B, substrate is heated to be transported to the sputtering chamber of magnetron sputtering apparatus after 205 DEG C -215 DEG C, using magnetron sputtering mode
First time deposition is carried out in the top surface of substrate, the 3rd ITO electrode layer of 14-16 nanometer thickness is obtained, is transported to cooling chamber and is cooled to
Room temperature；
Step C, magnetron sputtering apparatus is transported to after the substrate that deposition has the 3rd ITO electrode layer being heated into 215 DEG C -225 DEG C
Sputtering chamber, deposited using magnetron sputtering mode on the surface of the 3rd ITO electrode layer, obtain the 2nd ITO of 11-13 nanometer thickness
Electrode layer, it is transported to cooling chamber and is cooled to room temperature；
Step D, magnetron sputtering apparatus is transported to after the substrate that deposition has the second ITO electrode layer being heated into 225 DEG C -235 DEG C
Sputtering chamber, deposited using magnetron sputtering mode on the surface of the second ITO electrode layer, obtain the first ITO of 8-10 nanometer thickness
Electrode layer, it is transported to cooling chamber and is cooled to room temperature；
Step E, the substrate for depositing and having the first ITO electrode layer is overturn, magnetic control is transported to after being heated to 205 DEG C -215 DEG C
The sputtering chamber of sputtering equipment, deposited using top surface of the magnetron sputtering mode in substrate, obtain the 4th of 14-16 nanometer thickness
ITO electrode layer, it is transported to cooling chamber and is cooled to room temperature；
Step F, magnetron sputtering apparatus is transported to after the substrate that deposition has the 4th ITO electrode layer being heated into 215 DEG C -225 DEG C
Sputtering chamber, deposited using magnetron sputtering mode on the surface of the 4th ITO electrode layer, obtain the 5th ITO of 11-13 nanometer thickness
Electrode layer, it is transported to cooling chamber and is cooled to room temperature；
Step G, magnetron sputtering apparatus is transported to after the substrate that deposition has the 5th ITO electrode layer being heated into 225 DEG C -235 DEG C
Sputtering chamber, deposited using magnetron sputtering mode on the surface of the 5th ITO electrode layer, obtain the 6th ITO of 8-10 nanometer thickness
Electrode layer, it is transported to cooling chamber and is cooled to room temperature；
Step H, the substrate after being cooled down in step G is transported to relief chamber and carries out unloading piece.
In said process, in step B and step E, cooling procedure is specially：
First stage is cooled down, and substrate is cooled into 160 DEG C with 7 DEG C/h of cooling velocity, is incubated 2.5 hours；
Second stage cools down, and is then cooled to room temperature with 7 DEG C/h of cooling velocity.
In step C and step F, cooling procedure is specially：
First stage is cooled down, and substrate is cooled into 160 DEG C with 8 DEG C/h of cooling velocity, is incubated 2 hours；
Second stage cools down, and is then cooled to room temperature with 8 DEG C/h of cooling velocity.
In step D and step G, cooling procedure is specially：
First stage is cooled down, and substrate is cooled into 160 DEG C with 9 DEG C/h of cooling velocity, is incubated 1.5 hours；
Second stage cools down, and is then cooled to room temperature with 9 DEG C/h of cooling velocity.
The cooling procedure in each step is strictly controlled, is more beneficial for the crystallization process of ito film, so that crystal phase structure is molded,
Lifting light transmission rate simultaneously increases service life.
In a preferred embodiment, in described step B, C, D, E, F and G, target is by mass ratio used in magnetron sputtering apparatus
For 94：6 indium oxide and tin oxide composition.The ito film of the target material deposition of the mass ratio, crystal phase structure are more perfect.
The beneficial effects of the invention are as follows：
（1）By substrate both sides design on ITO electrode layer and lower ITO electrode layer, form capacitive touch screen film, pass through by
Upper ITO electrode layer is designed to the 3rd ITO electrode layer, the second ITO electrode layer and the first ITO electrode layer that thickness is sequentially reduced, under
ITO electrode layer is designed to the 4th ITO electrode layer, the 5th ITO electrode layer and the 6th ITO electrode layer that thickness is sequentially reduced, and avoids
Influence of the thickness to ito film crystallization process, the crystal phase structure of ito film is improved, to improve the light of whole ITO conductive films transmission
Rate, its resistivity is reduced, and increase its service life, any point can bear touches more than 8 thousands of times；
（2）Polyethylene terephthalate's resin has preferable translucidus, but translucidus increase and reduced with thickness, thickness
150-200 microns are designed as, translucidus requirement can be met, and can meets intensity and toughness reguirements, reaches translucidus and use
The best of breed in life-span；
（3）By designing electrode protecting layer, service life is further lifted；
（4）The ITO electrode layer of substrate both sides uses the structure design of symmetrical expression, and strictly controls the thickness of each tunic, further
Influence of the thickness to crystallization process is reduced, to reduce its resistivity and lift its translucidus；
（5）By strictly controlling deposition process and cooling procedure, the crystallization of ito film is more beneficial for, so that crystal phase structure is molded, is carried
Rise light transmission rate and increase service life.
Brief description of the drawings
Fig. 1 is structural representation of the touch-screen described in the embodiment of the present invention with double-deck ITO conductive films；
Fig. 2 is flow chart of the touch-screen described in the embodiment of the present invention with double-deck ITO conductive films preparation method；
Description of reference numerals：
1- substrates, the ITO electrode layers of 2- first, the ITO electrode layers of 3- second, the ITO electrode layers of 4- the 3rd, the ITO electrode layers of 5- the 4th, 6-
5th ITO electrode layer, the ITO electrode layers of 7- the 6th, 8- electrode protecting layers.
Embodiment
The present invention is described in detail below in conjunction with the accompanying drawings.
Embodiment
With reference to figure 1, a kind of double-deck ITO conductive films of touch-screen, including substrate 1 and it is respectively deposited at the both sides of substrate 1
Upper ITO electrode layer and lower ITO electrode layer；The upper ITO electrode layer includes being cascading and thickness increases successively first
ITO electrode layer 2, the second ITO electrode layer 3 and the 3rd ITO electrode layer 4, the 3rd ITO electrode layer 4 are deposited on described substrate 1；
The lower ITO electrode layer includes the 4th ITO electrode layer 5, the 5th ITO electrode layer 6 being cascading and thickness is sequentially reduced
With the 6th ITO electrode layer 7, the 4th ITO electrode layer 5 is deposited on described substrate 1.
In another embodiment, the thickness of substrate 1 is 150 microns or 175 microns or 200 microns, base
Piece 1 uses polyethylene terephthalate's resin.
In another embodiment, the electrode of insulation is equipped with outside the ITO electrode layer 7 of the first ITO electrode layer 2 and the 6th
Protective layer 8.
In another embodiment, the 3rd ITO electrode layer 4 is identical with the thickness of the 4th ITO electrode layer 5, is received for 14
Rice or 15 nanometers or 16 nanometers；Second ITO electrode layer 3 is identical with the thickness of the 5th ITO electrode layer 6, is 11
Nanometer or 12 nanometers or 13 nanometers；First ITO electrode layer 2 is identical with the thickness of the 6th ITO electrode layer 7, is
8 nanometers or 9 nanometers or 10 nanometers.
With reference to figure 2, the present invention also provides preparation method of the above-mentioned touch-screen with double-deck ITO conductive films, including following mistake
Journey：
S1, the load chamber that substrate 1 is positioned over to magnetron sputtering apparatus, are vacuumized after sealing；
S2, substrate 1 are heated to 205 DEG C（It can also be 210 DEG C or 215 DEG C）The sputtering chamber of magnetron sputtering apparatus is transported to afterwards,
First time deposition is carried out using top surface of the magnetron sputtering mode in substrate 1, obtains 14 nanometers（Can also be that 15 nanometers or 16 are received
Rice）The 3rd thick ITO electrode layer 4, is transported to cooling chamber and is cooled to room temperature；
S3, by deposit have the 3rd ITO electrode layer substrate 1 be heated to 215 DEG C（It can also be 220 DEG C or 225 DEG C）After transport
To the sputtering chamber of magnetron sputtering apparatus, deposited using magnetron sputtering mode on the surface of the 3rd ITO electrode layer 4, obtain 11
Nanometer（It can also be 12 nanometers or 13 nanometers）The second thick ITO electrode layer 3, is transported to cooling chamber and is cooled to room temperature；
S4, by deposit have the second ITO electrode layer substrate 1 be heated to 225 DEG C -235 DEG C（It can also be 230 DEG C or 235 DEG C）
The sputtering chamber of magnetron sputtering apparatus is transported to afterwards, is deposited using magnetron sputtering mode on the surface of the second ITO electrode layer 3,
Obtain 8 nanometers（It can also be 9 nanometers or 10 nanometers）The first thick ITO electrode layer 2, is transported to cooling chamber and is cooled to room temperature；
S5, the upset deposition have the substrate 1 of the first ITO electrode layer, are heated to 205 DEG C -215 DEG C（It can also be 210 DEG C
Or 215 DEG C）The sputtering chamber of magnetron sputtering apparatus is transported to afterwards, is deposited using top surface of the magnetron sputtering mode in substrate,
Obtain 14 nanometers（It can also be 15 nanometers or 16 nanometers）The 4th thick ITO electrode layer 5, is transported to cooling chamber and is cooled to room
Temperature；
S6, by deposit have the 4th ITO electrode layer substrate 1 be heated to 215 DEG C（It can also be 220 DEG C or 225 DEG C）After transport
To the sputtering chamber of magnetron sputtering apparatus, deposited using magnetron sputtering mode on the surface of the 4th ITO electrode layer 5, obtain 11
Nanometer（It can also be 12 nanometers or 13 nanometers）The 5th thick ITO electrode layer 6, is transported to cooling chamber and is cooled to room temperature；
S7, by deposit have the 5th ITO electrode layer substrate 1 be heated to 225 DEG C（It can also be 230 DEG C or 235 DEG C）After transport
To the sputtering chamber of magnetron sputtering apparatus, deposited using magnetron sputtering mode on the surface of the 5th ITO electrode layer 6, obtain 8 and receive
Rice（It can also be 9 nanometers or 10 nanometers）The 6th thick ITO electrode layer 7, is transported to cooling chamber and is cooled to room temperature；
S8, the substrate after being cooled down in step G is transported to relief chamber's progress unloading piece.
In another embodiment, in the step S2-S7, target used in magnetron sputtering apparatus is 94 by mass ratio：6
Indium oxide and tin oxide composition.
In another embodiment, in step S2 and step S5, cooling procedure is specially：
First stage is cooled down, and substrate is cooled into 160 DEG C with 7 DEG C/h of cooling velocity, is incubated 2.5 hours；
Second stage cools down, and is then cooled to room temperature with 7 DEG C/h of cooling velocity.
In step S3 and step S6, cooling procedure is specially：
First stage is cooled down, and substrate is cooled into 160 DEG C with 8 DEG C/h of cooling velocity, is incubated 2 hours；
Second stage cools down, and is then cooled to room temperature with 8 DEG C/h of cooling velocity.
In step S4 and step S7, cooling procedure is specially：
First stage is cooled down, and substrate is cooled into 160 DEG C with 9 DEG C/h of cooling velocity, is incubated 1.5 hours；
Second stage cools down, and is then cooled to room temperature with 9 DEG C/h of cooling velocity.
Embodiment described above only expresses the embodiment of the present invention, and its description is more specific and detailed, but simultaneously
Therefore the limitation to the scope of the claims of the present invention can not be interpreted as.It should be pointed out that for one of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the guarantor of the present invention
Protect scope.
Claims (6)
- A kind of 1. double-deck ITO conductive films of touch-screen, it is characterised in that：Including substrate and it is respectively deposited at the upper of substrate both sides ITO electrode layer and lower ITO electrode layer；The upper ITO electrode layer includes the first ITO being cascading and thickness increases successively Electrode layer, the second ITO electrode layer and the 3rd ITO electrode layer, the 3rd ITO electrode layer deposit on the substrate；The lower ITO Electrode layer includes the 4th ITO electrode layer, the 5th ITO electrode layer and the 6th the ITO electricity being cascading and thickness is sequentially reduced Pole layer, the 4th ITO electrode layer deposit on the substrate.
- 2. the double-deck ITO conductive films of touch-screen according to claim 1, it is characterised in that：The substrate thickness is 150-200 microns, substrate use polyethylene terephthalate's resin.
- 3. the double-deck ITO conductive films of touch-screen according to claim 1 or 2, it is characterised in that：The first ITO electricity The electrode protecting layer of insulation is equipped with outside pole layer and the 6th ITO electrode layer.
- 4. the double-deck ITO conductive films of touch-screen according to claim 3, it is characterised in that：3rd ITO electrode layer It is identical with the thickness of the 4th ITO electrode layer, it is 14-16 nanometers；The thickness of second ITO electrode layer and the 5th ITO electrode layer It is identical, it is 11-13 nanometers；First ITO electrode layer is identical with the thickness of the 6th ITO electrode layer, is 8-10 nanometers.
- A kind of 5. preparation method of the double-deck ITO conductive films of touch-screen as claimed in claim 4, it is characterised in that including Following process：Step A, substrate is positioned over to the load chamber of magnetron sputtering apparatus, vacuumized after sealing；Step B, substrate is heated to be transported to the sputtering chamber of magnetron sputtering apparatus after 205 DEG C -215 DEG C, using magnetron sputtering mode First time deposition is carried out in the top surface of substrate, the 3rd ITO electrode layer of 14-16 nanometer thickness is obtained, is transported to cooling chamber and is cooled to Room temperature；Step C, magnetron sputtering apparatus is transported to after the substrate that deposition has the 3rd ITO electrode layer being heated into 215 DEG C -225 DEG C Sputtering chamber, deposited using magnetron sputtering mode on the surface of the 3rd ITO electrode layer, obtain the 2nd ITO of 11-13 nanometer thickness Electrode layer, it is transported to cooling chamber and is cooled to room temperature；Step D, magnetron sputtering apparatus is transported to after the substrate that deposition has the second ITO electrode layer being heated into 225 DEG C -235 DEG C Sputtering chamber, deposited using magnetron sputtering mode on the surface of the second ITO electrode layer, obtain the first ITO of 8-10 nanometer thickness Electrode layer, it is transported to cooling chamber and is cooled to room temperature；Step E, the substrate for depositing and having the first ITO electrode layer is overturn, magnetic control is transported to after being heated to 205 DEG C -215 DEG C The sputtering chamber of sputtering equipment, deposited using top surface of the magnetron sputtering mode in substrate, obtain the 4th of 14-16 nanometer thickness ITO electrode layer, it is transported to cooling chamber and is cooled to room temperature；Step F, magnetron sputtering apparatus is transported to after the substrate that deposition has the 4th ITO electrode layer being heated into 215 DEG C -225 DEG C Sputtering chamber, deposited using magnetron sputtering mode on the surface of the 4th ITO electrode layer, obtain the 5th ITO of 11-13 nanometer thickness Electrode layer, it is transported to cooling chamber and is cooled to room temperature；Step G, magnetron sputtering apparatus is transported to after the substrate that deposition has the 5th ITO electrode layer being heated into 225 DEG C -235 DEG C Sputtering chamber, deposited using magnetron sputtering mode on the surface of the 5th ITO electrode layer, obtain the 6th ITO of 8-10 nanometer thickness Electrode layer, it is transported to cooling chamber and is cooled to room temperature；Step H, the substrate after being cooled down in step G is transported to relief chamber and carries out unloading piece.
- A kind of 6. preparation method of the double-deck ITO conductive films of touch-screen as claimed in claim 5, it is characterised in that：It is described Step B, in C, D, E, F and G, target used in magnetron sputtering apparatus is 94 by mass ratio：6 indium oxide and tin oxide composition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610962342.0A CN107863182A (en) | 2016-11-04 | 2016-11-04 | A kind of touch-screen double-deck ITO conductive films and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610962342.0A CN107863182A (en) | 2016-11-04 | 2016-11-04 | A kind of touch-screen double-deck ITO conductive films and preparation method thereof |
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| CN107863182A true CN107863182A (en) | 2018-03-30 |
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| CN201610962342.0A Pending CN107863182A (en) | 2016-11-04 | 2016-11-04 | A kind of touch-screen double-deck ITO conductive films and preparation method thereof |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103489505A (en) * | 2013-10-12 | 2014-01-01 | 东莞市平波电子有限公司 | ITO (Indium Tin Oxide) conducting film for touch screen and preparation method thereof |
| CN203535981U (en) * | 2013-10-16 | 2014-04-09 | 东莞市平波电子有限公司 | Touch screen conductive film with obverse/reverse structure |
| CN203535978U (en) * | 2013-10-12 | 2014-04-09 | 东莞市平波电子有限公司 | ITO (Indium Tin Oxide) conducting film for touch screen |
-
2016
- 2016-11-04 CN CN201610962342.0A patent/CN107863182A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103489505A (en) * | 2013-10-12 | 2014-01-01 | 东莞市平波电子有限公司 | ITO (Indium Tin Oxide) conducting film for touch screen and preparation method thereof |
| CN203535978U (en) * | 2013-10-12 | 2014-04-09 | 东莞市平波电子有限公司 | ITO (Indium Tin Oxide) conducting film for touch screen |
| CN203535981U (en) * | 2013-10-16 | 2014-04-09 | 东莞市平波电子有限公司 | Touch screen conductive film with obverse/reverse structure |
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