CN105970167A - Antimony-doped tin oxide (ATO) film for touch screen and preparation method of ATO film - Google Patents
Antimony-doped tin oxide (ATO) film for touch screen and preparation method of ATO film Download PDFInfo
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- CN105970167A CN105970167A CN201610344330.1A CN201610344330A CN105970167A CN 105970167 A CN105970167 A CN 105970167A CN 201610344330 A CN201610344330 A CN 201610344330A CN 105970167 A CN105970167 A CN 105970167A
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- thin film
- ato
- touch screen
- ato thin
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
Abstract
The invention discloses an antimony-doped tin oxide (ATO) film for a touch screen and a preparation method of the ATO film. The ATO film comprises a substrate and an ATO film body, wherein the ATO film body is made of ATO and has the antimony content ranging from 0.1w% to 15wt%. The preparation method comprises steps as follows: 1) the substrate is cleaned; 2) sputtering coating is performed; 3) annealing treatment is performed. With the adoption of the ATO film for the touch screen and the preparation method of the ATO film, the prepared ATO film for the touch screen overcomes the defect of complex traditional electrode material preparation technologies and has the characteristics of high transmittance, high resistance and high hardness, and the preparation method is good in technology repeatability and stability, high in production efficiency and capable of facilitating large-scale industrial production.
Description
Technical field
The present invention relates to a kind of ATO thin film for touch screen and preparation method thereof.
Background technology
In recent years, along with electronics and information technology and the fast development of wireless telecommunications and application, portable electric
Subset has been obtained for using widely, such as mobile phone, MP3, MP4, digital camera and panel computer etc..
In order to reach purpose more convenient, that volume is more lightening, the input mode of many electronic products uses and touches
Screen input.
All referring to a transparency electrode in electric resistance touch screen and capacitance touch screen, traditional electrode material uses
Indium doped tin oxide (ITO), CNT (CNT), nano silver wire (AgNW) and Graphene
(Graphene) material such as；Indium doped tin oxide (ITO) is due to its rare earth element resource-constrained, and is difficult to
It is deposited on organic transparent substrate, such as polyethylene terephthalate (PET), Merlon (PC), has
Machine glass (PMMA) and other composite transparent material；And CNT (CNT), nano silver wire (AgNW)
And the material such as Graphene (Graphene) itself is opaque, complicated technique is needed to realize transparency electrode.
Summary of the invention
For solving above-mentioned technical problem, the present invention provides a kind of ATO thin film for touch screen and preparation thereof
Method, the ATO thin film for touch screen using the method to prepare has high saturating, high resistance, high rigidity
Feature, and technique repetition stability is good, production efficiency is high.
A kind of ATO thin film for touch screen of the present invention, including substrate base and ATO thin film, described
ATO thin film is antimony doped tin oxide, and described antimony content is 0.1-15wt%.
As preferred technical scheme, the transmitance of described substrate base is more than 90%.
As preferred technical scheme, described substrate base includes the one in glass or organic transparent substrate.
As preferred technical scheme, described organic transparent substrate include polyethylene terephthalate,
One in Merlon or lucite.
As preferred technical scheme, the thickness of described ATO thin film is 50-200nm.
The preparation method of a kind of ATO thin film for touch screen, comprises the steps:
1) substrate base is cleaned: after substrate base uses ultrasonic washing unit carry out ultrasonic cleaning, carry out
Clean and rinsing, dry up with nitrogen afterwards, obtain clean substrates substrate；
2) sputter coating: clean substrates substrate is placed in vacuum chamber evacuation, with RF power supply to mixing antimony
Stannum oxide ATO ceramic target sputters, and makes to be attached with on clean substrates substrate ATO thin film deposition；
3) annealing: the substrate base of ATO thin film deposition is made annealing treatment, obtains for touching
Touch the ATO thin film of screen.
As preferred technical scheme, step 1) in, the temperature of described ultrasonic cleaning is 25-35 DEG C, time
Between be 10-20min.
As preferred technical scheme, step 2) in, the vacuum after described evacuation is 10-3-10-4Pa。
As preferred technical scheme, step 2) in, described sputtering includes pre-sputtering and formal sputtering, institute
The time stating pre-sputtering is 5-10min, and the time of described formal sputtering is 5-30min, described formal sputtering
Power be 200-800W, described formal sputtering atmosphere includes Ar, O2In one or more.
As preferred technical scheme, step 3) in, the temperature of described annealing is 80-300 DEG C, described in move back
The fire time is 15-45min.
The method that the preparation method for the ATO thin film of touch screen of the application innovatively uses sputter coating
Substrate carries out plated film, the film of the method plating evenly, fine and close, have that hardness is high and the knot of substrate
Close the feature that degree of stability is high.
Prepared by a kind of ATO thin film for touch screen using the present invention and preparation method thereof is used for touching
The ATO thin film of screen overcomes the shortcoming of conventional electrode materials complicated process of preparation, has high permeability, height
Resistance, the feature of high rigidity, and the technique repetition stability of preparation method is good, production efficiency is high, it is easy to
Large-scale industrial production.
Detailed description of the invention
It is explained the present invention below, it should be understood that example is for this is described with instantiation
Bright rather than limitation of the present invention, the scope of the present invention and core content are in addition true according to claims
Fixed.
Embodiment 1
A kind of ATO thin film for touch screen that the present embodiment provides, is the glass of 91% including transmitance
The ATO thin film that substrate base and thickness are 50nm, antimony content is 10wt%.
The preparation method of a kind of ATO thin film for touch screen, comprises the steps:
1) substrate base is cleaned: glass substrate substrate is put into ultrasonic washing unit and carries out ultrasonic cleaning,
The temperature of ultrasonic cleaning is 30 DEG C, and the time is 15min, after ultrasonic cleaning, cleans and rinses, it
Dry up with nitrogen afterwards, it is ensured that the glass substrate substrate surface cleaning after drying up, without greasy dirt, obtains clean substrates
Substrate；
2) sputter coating: clean substrates substrate is placed in vacuum chamber and evacuation reaches 5 × 10-4During Pa,
With RF power supply, the ATO ceramic target that antimony content is 10wt% is carried out pre-sputtering, after pre-sputtering 8min,
Starting formal sputtering, power is 800W, and atmosphere is Ar/O2, its flow is respectively 100/40sccm, 5min
After make to be attached with on clean substrates substrate the ATO thin film deposition of 50nm thickness；
3) annealing: the substrate base of ATO thin film deposition carries out 300 DEG C of annealings, and the time is
15min, obtains the ATO thin film for touch screen.
Embodiment 2
The present embodiment provide a kind of ATO thin film for touch screen, including transmitance be 95% organic
The ATO thin film that glass substrate substrate and thickness are 200nm, antimony content is 0.5wt%.
The preparation method of a kind of ATO thin film for touch screen, comprises the steps:
1) clean substrate base: lucite substrate base is put into ultrasonic washing unit carry out ultrasonic clearly
Washing, the temperature of ultrasonic cleaning is 25 DEG C, and the time is 20min, after ultrasonic cleaning, cleans and rinses,
Dry up with nitrogen afterwards, it is ensured that the lucite substrate base clean surface after drying up, without greasy dirt, obtains clean
Clean substrate base；
2) sputter coating: clean substrates substrate is placed in vacuum chamber and evacuation reaches 10-4During Pa, use
RF power supply carries out pre-sputtering to the ATO ceramic target that antimony content is 0.5wt%, after pre-sputtering 5min, opens
Beginning formal sputtering, power is 200W, and atmosphere is Ar/O2, its flow is respectively 100/20sccm, 30min
After make to be attached with on clean substrates substrate the ATO thin film deposition of 200nm thickness；
3) annealing: the substrate base of ATO thin film deposition carries out 80 DEG C of annealings, and the time is
45min, obtains the ATO thin film for touch screen.
Embodiment 3
The present embodiment provide a kind of ATO thin film for touch screen, including transmitance be 97% poly-right
The ATO thin film that PET substrate base and thickness are 100nm, antimony content is 15wt%.
The preparation method of a kind of ATO thin film for touch screen, comprises the steps:
1) substrate base is cleaned: polyethylene terephthalate substrate base is put into ultrasonic washing unit
Inside carrying out ultrasonic cleaning, the temperature of ultrasonic cleaning is 20 DEG C, and the time is 10min, after ultrasonic cleaning, enters
Row is cleaned and rinsing, dries up with nitrogen afterwards, it is ensured that the polyethylene terephthalate substrate after drying up
Substrate surface cleaning, without greasy dirt, obtains clean substrates substrate；
2) sputter coating: clean substrates substrate is placed in vacuum chamber and evacuation reaches 10-3During Pa, use
RF power supply carries out pre-sputtering to the ATO ceramic target that antimony content is 15wt%, after pre-sputtering 10min, opens
Beginning formal sputtering, power is 300W, and atmosphere is Ar/O2, its flow is respectively 100/30sccm, 20min
After make to be attached with on clean substrates substrate the ATO thin film deposition of 100nm thickness；
3) annealing: the substrate base of ATO thin film deposition carries out 150 DEG C of annealings, and the time is
30min, obtains the ATO thin film for touch screen.
The product of above example is carried out performance detection.With the adhesive force of hundred lattice method of testing testing films,
By the hardness of measuring pencil durometer thin film, with the square resistance of high resistant instrument testing film, use spectrophotometric
The transmitance of meter testing film.Acquired results is shown in Table 1.
Table 1 is for the ATO films test result table of touch screen
As shown in Table 1, use the ATO thin film for touch screen prepared by the method for the present invention at glass
Adhesive force reach hundred lattice test 0 grade, hardness be more than 9H, resistance is between 0.1M Ω～3M Ω, thin
Film transmitance is more than 87%；Adhesive force on lucite and polyethylene terephthalate reaches hundred
Lattice test 0 grade, and hardness is more than 5H, and resistance is between 0.1M Ω～10M Ω, and film transmission rate is more than
90%.
Prepared by a kind of ATO thin film for touch screen using the present invention and preparation method thereof is used for touching
The ATO thin film of screen overcomes the shortcoming of conventional electrode materials complicated process of preparation, has high permeability, height
Resistance, the feature of high rigidity, and the technique repetition stability of preparation method is good, production efficiency is high, it is easy to
Large-scale industrial production.
Embodiment described above is the preferably scheme of the present invention, and the present invention not makees any form
On restriction, on the premise of without departing from the technical scheme described in claim also have other variant and
Remodeling.
Claims (10)
1. the ATO thin film for touch screen, it is characterised in that: include substrate base and ATO thin film,
Described ATO thin film is antimony doped tin oxide, and described antimony content is 0.1-15wt%.
A kind of ATO thin film for touch screen the most according to claim 1, it is characterised in that: institute
The transmitance stating substrate base is more than 90%.
A kind of ATO thin film for touch screen the most according to claim 1, it is characterised in that: institute
State substrate base and include the one in glass or organic transparent substrate.
A kind of ATO thin film for touch screen the most according to claim 3, it is characterised in that: institute
State organic transparent substrate and include the one in polyethylene terephthalate, Merlon or lucite.
A kind of ATO thin film for touch screen the most according to claim 1, it is characterised in that: institute
The thickness stating ATO thin film is 50-200nm.
6. the ATO thin film for touch screen according to any claim described in claim 1-5
Preparation method, it is characterised in that comprise the steps:
1) substrate base is cleaned: after substrate base uses ultrasonic washing unit carry out ultrasonic cleaning, carry out
Clean and rinsing, dry up with nitrogen afterwards, obtain clean substrates substrate；
2) sputter coating: clean substrates substrate is placed in vacuum chamber evacuation, with RF power supply to mixing antimony
Stannum oxide ATO ceramic target sputters, and makes to be attached with on clean substrates substrate ATO thin film deposition；
3) annealing: the substrate base of ATO thin film deposition is made annealing treatment, obtains for touching
Touch the ATO thin film of screen.
The preparation method of a kind of ATO thin film for touch screen the most according to claim 6, it is special
Levy and be: step 1) in, the temperature of described ultrasonic cleaning is 25-35 DEG C, and the time is 10-20min.
The preparation method of a kind of ATO thin film for touch screen the most according to claim 6, it is special
Levy and be: step 2) in, the vacuum after described evacuation is 10-3-10-4Pa。
The preparation method of a kind of ATO thin film for touch screen the most according to claim 6, it is special
Levy and be: step 2) in, described sputtering includes that pre-sputtering and formal sputtering, the time of described pre-sputtering are
5-10min, the time of described formal sputtering is 5-30min, and the power of described formal sputtering is 200-800W,
Described formal sputtering atmosphere includes Ar, O2In one or more.
The preparation method of a kind of ATO thin film for touch screen the most according to claim 6, it is special
Levy and be: step 3) in, the temperature of described annealing is 80-300 DEG C, and described annealing time is 15-45min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610344330.1A CN105970167A (en) | 2016-05-23 | 2016-05-23 | Antimony-doped tin oxide (ATO) film for touch screen and preparation method of ATO film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610344330.1A CN105970167A (en) | 2016-05-23 | 2016-05-23 | Antimony-doped tin oxide (ATO) film for touch screen and preparation method of ATO film |
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| CN105970167A true CN105970167A (en) | 2016-09-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610344330.1A Pending CN105970167A (en) | 2016-05-23 | 2016-05-23 | Antimony-doped tin oxide (ATO) film for touch screen and preparation method of ATO film |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106946468A (en) * | 2017-02-15 | 2017-07-14 | 江西沃格光电股份有限公司 | Resistive formation, contactor control device and preparation method thereof |
| CN110597423A (en) * | 2019-09-17 | 2019-12-20 | 武汉华星光电半导体显示技术有限公司 | Resistance-type touch screen and flexible display device |
| CN114087923A (en) * | 2021-11-24 | 2022-02-25 | 中国人民解放军63983部队 | Laser compatible coating camouflage material and preparation method thereof |
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| WO2007142330A1 (en) * | 2006-06-08 | 2007-12-13 | Asahi Glass Company, Limited | Transparent conductive film, process for production of the film, and sputtering target for use in the production of the film |
| CN101235480A (en) * | 2008-03-06 | 2008-08-06 | 昆明理工大学 | Method for preparing antimony-doping tin oxide thin film carrier material |
| CN102586748A (en) * | 2012-02-10 | 2012-07-18 | 武汉理工大学 | P-type electric-conducting Sb mixed SnO2 film and stannic oxide homogeneous pn junction containing film and preparation methods thereof |
| CN102899624A (en) * | 2012-09-20 | 2013-01-30 | 上海大学 | Preparation method of transparent conductive oxide composite film material |
| CN103849844A (en) * | 2014-02-13 | 2014-06-11 | 大连七色光太阳能科技开发有限公司 | Fluorine-doped stannic oxide target for magnetron sputtering and preparation method thereof |
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2016
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007142330A1 (en) * | 2006-06-08 | 2007-12-13 | Asahi Glass Company, Limited | Transparent conductive film, process for production of the film, and sputtering target for use in the production of the film |
| CN101235480A (en) * | 2008-03-06 | 2008-08-06 | 昆明理工大学 | Method for preparing antimony-doping tin oxide thin film carrier material |
| CN102586748A (en) * | 2012-02-10 | 2012-07-18 | 武汉理工大学 | P-type electric-conducting Sb mixed SnO2 film and stannic oxide homogeneous pn junction containing film and preparation methods thereof |
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| CN103849844A (en) * | 2014-02-13 | 2014-06-11 | 大连七色光太阳能科技开发有限公司 | Fluorine-doped stannic oxide target for magnetron sputtering and preparation method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106946468A (en) * | 2017-02-15 | 2017-07-14 | 江西沃格光电股份有限公司 | Resistive formation, contactor control device and preparation method thereof |
| CN110597423A (en) * | 2019-09-17 | 2019-12-20 | 武汉华星光电半导体显示技术有限公司 | Resistance-type touch screen and flexible display device |
| CN114087923A (en) * | 2021-11-24 | 2022-02-25 | 中国人民解放军63983部队 | Laser compatible coating camouflage material and preparation method thereof |
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