CN105970154A - Preparation method of anti-static, transparent and heat-insulating antimony-doped tin oxide (ATO) coating - Google Patents
Preparation method of anti-static, transparent and heat-insulating antimony-doped tin oxide (ATO) coating Download PDFInfo
- Publication number
- CN105970154A CN105970154A CN201610344933.1A CN201610344933A CN105970154A CN 105970154 A CN105970154 A CN 105970154A CN 201610344933 A CN201610344933 A CN 201610344933A CN 105970154 A CN105970154 A CN 105970154A
- Authority
- CN
- China
- Prior art keywords
- ato
- coating
- preparation
- insulated
- anlistatig
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Laminated Bodies (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a preparation method of an anti-static, transparent and heat-insulating antimony-doped tin oxide (ATO) coating. The method comprises steps as follows: 1) a substrate is cleaned; 2) sputtering coating is performed. The ATO coating prepared with the method overcomes multiple defects of traditional wet preparation technologies and has the characteristics of high transmittance, high reflectivity, high hardness, low resistance, anti-static performance, good weather resistance and good heat-insulating performance, and the preparation method is good in technology repeatability and stability, high in production efficiency, energy-saving, environment-friendly and capable of facilitating large-scale industrial production.
Description
Technical field
The present invention relates to the preparation method of a kind of anlistatig transparent heat-insulated ATO coating.
Background technology
Electrostatic is that sheet resistance is the highest (generally 1013～1014More than Ω) insulant surface occur
Charge accumulated phenomenon.The series of problems such as electrostatic can cause attraction dust, electric charge to puncture, electromagnetic radiation,
Bring very big inconvenience and potential safety hazard to production and life.
Antistatic film is attached to the thinnest one layer coating of other device surface, by its certain leading
Accumulation is derived thus to reach a kind of function of the effect of antistatic thin by electrical property at the electric charge of device surface
Film.Generally its body resistivity 103Ω cm, square resistance is 105～109Antistatic film between Ω can
With in several seconds kinds the eliminostatic of device surface.
Conventional antistatic film preparation method is prepared by wet method, but ATO thin film prepared by this method exists film layer
Poor adhesive force, hardness are low, process repeatability is unstable, and waste water and waste liquid is many, problem not environmentally.
Summary of the invention
For solving above technical problem, the present invention provides the system of a kind of anlistatig transparent heat-insulated ATO coating
Preparation Method, use the anlistatig transparent heat-insulated ATO coating prepared of the method have high thoroughly, high rigidity,
Low resistance, antistatic, well-insulated feature, and technique repetition stability is good, production efficiency is high.
The preparation method of a kind of anlistatig transparent heat-insulated ATO coating of the present invention, comprises the steps:
1) substrate base is cleaned: substrate base uses ultrasonic washing unit dry up after carrying out ultrasonic cleaning,
Obtain clean substrates substrate；
2) sputter coating: clean substrates substrate is placed in vacuum chamber evacuation, with RF power supply to ATO
Ceramic target sputters, and makes to be attached with ATO coating deposition on clean substrates substrate.
The preparation method of the anlistatig transparent heat-insulated ATO coating of the application innovatively uses sputter coating
Method carries out plated film on substrate, the film of the method plating evenly, fine and close, have that hardness is high and substrate
The high feature of combination degree of stability.
As preferred technical scheme, described ATO ceramic target is antimony doped tin oxide ATO ceramic target, described
ATO coating is antimony doped tin oxide ATO coating.
As preferred technical scheme, the antimony content of described ATO ceramic target is 0.1-15wt%, described ATO
The antimony content of coating is 0.1-15wt%.
As preferred technical scheme, step 1) in, described substrate base includes glass or organic transparent base
One in sheet.
As preferred technical scheme, described organic transparent substrate include polyethylene terephthalate,
One in Merlon or lucite.
As preferred technical scheme, step 2) in, described sputtering includes pre-sputtering and formal sputtering, institute
The time stating pre-sputtering is 5-10min, and the time of described formal sputtering is 30-60min, described formal sputtering
Power be 100-800W, the atmosphere of described formal sputtering be ratio be the Ar/O of 50-80%2Atmosphere.
The ATO using the preparation method of a kind of anlistatig transparent heat-insulated ATO coating of the present invention to prepare is coated with
Layer overcomes many deficiencies of conventional wet preparation technology, have high permeability, highly reflective, high rigidity,
Low resistance, antistatic, good weatherability, well-insulated feature, and the technique of preparation method repeat stable
Property is good, production efficiency is high, energy-conserving and environment-protective, it is easy to large-scale industrial production.
Accompanying drawing explanation
Fig. 1 is the anlistatig transparent heat-insulated ATO saturating curves of coating light of different embodiments of the invention.
Detailed description of the invention
It is explained the present invention below, it should be understood that example is for this is described with instantiation
Bright rather than limitation of the present invention, the scope of the present invention and core content are in addition true according to claims
Fixed.
Embodiment 1
The preparation method of a kind of anlistatig transparent heat-insulated ATO coating that the present embodiment provides, including as follows
Step:
1) substrate base is cleaned: put into by glass substrate substrate after ultrasonic washing unit carries out ultrasonic cleaning
Dry up, it is ensured that the glass substrate substrate surface cleaning after drying up, without greasy dirt, obtains clean substrates substrate；
2) sputter coating: clean substrates substrate is placed in vacuum chamber and evacuation reaches 3 × 10-3During Pa,
Being filled with working gas, atmosphere is Ar/O2Ratio 80%, operating air pressure is 0.5Pa, with RF power supply to antimony
Content is that the ATO ceramic target of 15wt% carries out pre-sputtering, after pre-sputtering 5min, starts formal sputtering,
Power is 800W, make after 30min to be attached with on clean substrates substrate thickness be 200nm, antimony content be
The ATO coating deposition of 15wt%.
Embodiment 2
The preparation method of a kind of anlistatig transparent heat-insulated ATO coating that the present embodiment provides, including as follows
Step:
1) clean substrate base: lucite substrate base is put into ultrasonic washing unit carry out ultrasonic clearly
Dry up after washing, it is ensured that the lucite substrate base clean surface after drying up, without greasy dirt, obtains clean substrates
Substrate；
2) sputter coating: clean substrates substrate is placed in vacuum chamber and evacuation reaches 3 × 10-3During Pa,
Being filled with working gas, atmosphere is Ar/O2Ratio 50%, operating air pressure is 0.5Pa, with RF power supply to antimony
Content is that the ATO ceramic target of 0.1wt% carries out pre-sputtering, after pre-sputtering 10min, starts formal sputtering,
Power is 100W, make after 60min to be attached with on clean substrates substrate thickness be 300nm, antimony content be
The ATO coating deposition of 0.1wt%.
Embodiment 3
The preparation method of a kind of anlistatig transparent heat-insulated ATO coating that the present embodiment provides, including as follows
Step:
1) substrate base is cleaned: polyethylene terephthalate substrate base is put into ultrasonic washing unit
Dry up after inside carrying out ultrasonic cleaning, it is ensured that the polyethylene terephthalate substrate base surface after drying up
Clean without greasy dirt, obtain clean substrates substrate；
2) sputter coating: clean substrates substrate is placed in vacuum chamber and evacuation reaches 3 × 10-3During Pa,
Being filled with working gas, atmosphere is Ar/O2Ratio 65%, operating air pressure is 0.5Pa, with RF power supply to antimony
Content is that the ATO ceramic target of 6wt% carries out pre-sputtering, after pre-sputtering 8min, starts formal sputtering, merit
Rate is 300W, make after 40min to be attached with on clean substrates substrate thickness be 400nm, antimony content be 6wt%
ATO coating deposition.
The product of above example is carried out performance detection.Attachment with hundred lattice test figure layers with substrate base
Power, by the hardness of measuring pencil durometer thin film, with the square resistance of high resistant instrument testing film, gained is tied
Fruit is shown in Table 1.
The anlistatig transparent heat-insulated ATO coating test result table of table 1
As shown in Table 1, use anlistatig transparent heat-insulated ATO coating prepared by the method for the present invention firmly
Degree more than 9H, surface square resistance～300M, antistatic effect can be reached.
By the transmitance (containing substrate base) of spectrophotometer testing film, result is as shown in Figure 1.
The ATO using the preparation method of a kind of anlistatig transparent heat-insulated ATO coating of the present invention to prepare is coated with
Layer overcomes many deficiencies of conventional wet preparation technology, have high permeability, highly reflective, high rigidity,
Low resistance, antistatic, good weatherability, well-insulated feature, and the technique of preparation method repeat stable
Property is good, production efficiency is high, energy-conserving and environment-protective, it is easy to large-scale industrial production.
Embodiment described above is the preferably scheme of the present invention, and the present invention not makees any form
On restriction, on the premise of without departing from the technical scheme described in claim also have other variant and
Remodeling.
Claims (6)
1. the preparation method of an anlistatig transparent heat-insulated ATO coating, it is characterised in that include as follows
Step:
1) substrate base is cleaned: substrate base uses ultrasonic washing unit dry up after carrying out ultrasonic cleaning,
Obtain clean substrates substrate；
2) sputter coating: clean substrates substrate is placed in vacuum chamber evacuation, with RF power supply to ATO
Ceramic target sputters, and makes to be attached with ATO coating deposition on clean substrates substrate.
The preparation method of a kind of anlistatig transparent heat-insulated ATO coating the most according to claim 1,
It is characterized in that: described ATO ceramic target is antimony doped tin oxide ATO ceramic target, described ATO coating is
Antimony doped tin oxide ATO coating.
The preparation method of a kind of anlistatig transparent heat-insulated ATO coating the most according to claim 2,
It is characterized in that: the antimony content of described ATO ceramic target is 0.1-15wt%, the antimony of described ATO coating contains
Amount is 0.1-15wt%.
The preparation method of a kind of anlistatig transparent heat-insulated ATO coating the most according to claim 1,
It is characterized in that: step 1) in, described substrate base includes the one in glass or organic transparent substrate.
The preparation method of a kind of anlistatig transparent heat-insulated ATO coating the most according to claim 4,
It is characterized in that: described organic transparent substrate includes polyethylene terephthalate, Merlon or has
One in machine glass.
The preparation method of a kind of anlistatig transparent heat-insulated ATO coating the most according to claim 1,
It is characterized in that: step 2) in, described sputtering includes pre-sputtering and formal sputtering, described pre-sputtering time
Between be 5-10min, the time of described formal sputtering is 30-60min, and the power of described formal sputtering is
100-800W, the atmosphere of described formal sputtering be ratio be the Ar/O of 50-80%2Atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610344933.1A CN105970154A (en) | 2016-05-23 | 2016-05-23 | Preparation method of anti-static, transparent and heat-insulating antimony-doped tin oxide (ATO) coating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610344933.1A CN105970154A (en) | 2016-05-23 | 2016-05-23 | Preparation method of anti-static, transparent and heat-insulating antimony-doped tin oxide (ATO) coating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105970154A true CN105970154A (en) | 2016-09-28 |
Family
ID=56956860
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610344933.1A Pending CN105970154A (en) | 2016-05-23 | 2016-05-23 | Preparation method of anti-static, transparent and heat-insulating antimony-doped tin oxide (ATO) coating |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105970154A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106946468A (en) * | 2017-02-15 | 2017-07-14 | 江西沃格光电股份有限公司 | Resistive formation, contactor control device and preparation method thereof |
| CN115850772A (en) * | 2022-11-16 | 2023-03-28 | 浙江盛康源新材料有限公司 | Anti-static PETG (polyethylene terephthalate glycol) film material for furniture surface coating and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007142330A1 (en) * | 2006-06-08 | 2007-12-13 | Asahi Glass Company, Limited | Transparent conductive film, process for production of the film, and sputtering target for use in the production of the film |
| CN102899624A (en) * | 2012-09-20 | 2013-01-30 | 上海大学 | Preparation method of transparent conductive oxide composite film material |
| CN103849844A (en) * | 2014-02-13 | 2014-06-11 | 大连七色光太阳能科技开发有限公司 | Fluorine-doped stannic oxide target for magnetron sputtering and preparation method thereof |
-
2016
- 2016-05-23 CN CN201610344933.1A patent/CN105970154A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007142330A1 (en) * | 2006-06-08 | 2007-12-13 | Asahi Glass Company, Limited | Transparent conductive film, process for production of the film, and sputtering target for use in the production of the film |
| CN102899624A (en) * | 2012-09-20 | 2013-01-30 | 上海大学 | Preparation method of transparent conductive oxide composite film material |
| CN103849844A (en) * | 2014-02-13 | 2014-06-11 | 大连七色光太阳能科技开发有限公司 | Fluorine-doped stannic oxide target for magnetron sputtering and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 陈甲林 等: ""射频磁控溅射法制备 SnO2∶Sb 透明导电薄膜的光电性能研究"", 《液晶与显示》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106946468A (en) * | 2017-02-15 | 2017-07-14 | 江西沃格光电股份有限公司 | Resistive formation, contactor control device and preparation method thereof |
| CN115850772A (en) * | 2022-11-16 | 2023-03-28 | 浙江盛康源新材料有限公司 | Anti-static PETG (polyethylene terephthalate glycol) film material for furniture surface coating and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106086789B (en) | The interface layer method of transparent conductive film is deposited in surface of polyester by magnetron sputtering | |
| Lim et al. | Mechanical flexibility of ZnSnO/Ag/ZnSnO films grown by roll-to-roll sputtering for flexible organic photovoltaics | |
| Park et al. | Characteristics of ITO films with oxygen plasma treatment for thin film solar cell applications | |
| CN103887285B (en) | Method for manufacturing anti-static TFT substrate | |
| CN105154850B (en) | A kind of carbon fluoride film and its preparation method and application | |
| CN106242313A (en) | A kind of film plating process of Wear-resistant, high-temperature resistant low radiation coated glass | |
| CN105970154A (en) | Preparation method of anti-static, transparent and heat-insulating antimony-doped tin oxide (ATO) coating | |
| CN101654331A (en) | Method for preparing textured ZnO transparent conductive coated glass | |
| CN106186724A (en) | A kind of high light green color bendable steel Three-silver-layer low-radiation coated glass and preparation method thoroughly | |
| US8637862B2 (en) | Device housing and method for making the same | |
| CN202137995U (en) | Transparent conductive film glass | |
| CN106756789A (en) | A kind of compound transparent electricity conductive film and preparation method thereof | |
| CN106045333B (en) | A kind of low radiation coated glass and preparation method thereof | |
| CN105819703A (en) | Preparation method of capacitive touch screen electro-conductive glass with shadow eliminating function | |
| CN108766627A (en) | A kind of silver nanoparticle mesh flexible transparent electrode and preparation method thereof | |
| CN108447617A (en) | A method of protection nano-silver thread transparent conductive film | |
| CN108796458A (en) | A kind of Organic-inorganic composite transparent membrane | |
| CN102837467A (en) | Transparent conductive film glass and preparation method thereof | |
| CN105970167A (en) | Antimony-doped tin oxide (ATO) film for touch screen and preparation method of ATO film | |
| CN110527963A (en) | A kind of manufacturing method that antistatic touch display is integrally shielded | |
| Jung et al. | Effects of intermediate metal layer on the properties of Ga–Al doped ZnO/metal/Ga–Al doped ZnO multilayers deposited on polymer substrate | |
| CN105741916B (en) | A kind of flexible transparent electrode and preparation method thereof | |
| CN109811308A (en) | A kind of ITO process for making conducting membrane | |
| KR101512063B1 (en) | Method for producing transparent conductive film where multi-layer thin film is coated, multi-layer thin film type transparent conductive film produce by the same, and multi-layer thin film type transparent conductive film producing device | |
| CN106024110A (en) | Strontium stannate-based flexible transparent conductive electrode and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160928 |
|
| RJ01 | Rejection of invention patent application after publication |