CN203535977U - Touch screen ITO conductive film with improved structure - Google Patents
Touch screen ITO conductive film with improved structure Download PDFInfo
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- CN203535977U CN203535977U CN201320629838.8U CN201320629838U CN203535977U CN 203535977 U CN203535977 U CN 203535977U CN 201320629838 U CN201320629838 U CN 201320629838U CN 203535977 U CN203535977 U CN 203535977U
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Abstract
The utility model relates to the technical field of touch screen conductive films, in particular to a touch screen ITO conductive film with an improved structure. The touch screen ITO conductive film comprises a resin matrix, and a silver nano film layer, a first ITO layer, a second ITO layer, a third ITO layer and a fourth ITO layer which are sequentially deposited on the lower surface of the resin matrix. According to the utility model, by arrangement of the silver nano film layer and use of high permeability and conductivity of nano-silver, the binding force between the silver nano film layer and the resin matrix and the conductivity of the touch screen ITO conductive film are greatly improved; and by arrangement of the first ITO layer, the second ITO layer, the third ITO layer and the fourth ITO layer, gradual improvement of a crystal structure is promoted, the ITO is subjected to a crystallization process each time after being deposited, and the perfect crystallization of the ITO layer is effectively promoted. In summary, the prepared touch screen ITO conductive film has the advantages of high transmittance, low resistivity and good chemical stability.
Description
Technical field
The utility model relates to touch-screen conducting film technical field, is specifically related to a kind of touch-screen ITO conducting film of architecture advances.
Background technology
Touch-screen is a kind of remarkable input equipment that improves man machine operation interface, have intuitively, simply, advantage efficiently.Touch-screen obtains a wide range of applications in many electronic products, such as mobile phone, PDA, multimedia, public information inquiry system etc.Touch-screen is commonly used ITO conducting film in making, and ITO conducting film refers to the method that adopts magnetron sputtering, the high-tech product that sputter transparent indium tin oxide (ITO) conductive film coating obtains on transparent organic film material.ITO(Indium Tin Oxides, indium tin metal oxide), as a kind of typical N type oxide semiconductor, be used in widely the fields such as mobile phone, MP3, MP4, digital camera.
Existing ITO film, ITO layer and resin matrix adhesion are poor, and resistivity is high, see through rate variance and poor chemical stability, can not meet production requirement.
Summary of the invention
The purpose of this utility model is for the deficiencies in the prior art, provides a kind of ITO layer and resin matrix adhesion is good, resistivity is low, transmitance is good and touch-screen ITO conducting film that chemical stability is good.
To achieve these goals, the utility model adopts following technical scheme: a kind of touch-screen of architecture advances ITO conducting film, comprises resin matrix and be deposited on successively silver nanoparticle rete, an ITO layer, the 2nd ITO layer, the 3rd ITO layer and the 4th ITO layer of resin matrix lower surface.
Preferably, described resin matrix is that Thickness Ratio is that pet resin matrix and the pressing of polyimide resin based body of 4:1-2:1 forms, described silver nanoparticle rete is deposited on polyimide resin based body, silver nanoparticle rete can better be penetrated into polyimide resin based body, has improved the adhesion between silver nanoparticle rete and polyimide resin based body.
Preferably, the thickness of described resin matrix is 100-150 micron, and the thickness of silver nanoparticle rete is 40-60 nanometer, the thickness of the one ITO layer is 8-10 nanometer, the thickness of the 2nd ITO layer is 6-8 nanometer, and the thickness of the 3rd ITO layer is 4-6 nanometer, and the thickness of the 4th ITO layer is 2-4 nanometer.In order to reduce the impact of thickness on crystallization, the thickness of an ITO layer, the 2nd ITO layer, the 3rd ITO layer and the 4th ITO layer is reduced successively, be conducive to the further perfect of crystallization process,
More preferred, the thickness of described resin matrix is 120-150 micron, and the thickness of described silver nanoparticle rete is 45-55 nanometer, the thickness of the one ITO layer is 7-8 nanometer, the thickness of the 2nd ITO layer is 6-7 nanometer, and the thickness of the 3rd ITO layer is 4-5 nanometer, and the thickness of the 4th ITO layer is 2-3 nanometer.
As preferred plan, the thickness of described resin matrix is 130 microns, and the thickness of described silver nanoparticle rete is 50 nanometers, the thickness of the one ITO layer is 9 nanometers, the thickness of the 2nd ITO layer is 7 nanometers, and the thickness of the 3rd ITO layer is 5 nanometers, and the thickness of the 4th ITO layer is 3 nanometers.
Preferably, the upper surface coated with protective film layer of described resin matrix, protection ITO conducting film is not scratched (scuffing) in process of production.
The utility model compared with prior art, beneficial effect is: the utility model is by arranging silver nanoparticle rete, utilize high osmosis and the conductivity of Nano Silver, adhesion and conductivity of the present utility model between silver nanoparticle rete and resin matrix have greatly been improved, the utility model is by arranging an ITO layer, the 2nd ITO layer, the 3rd ITO layer and the 4th ITO layer, impel crystal phase structure gradual perfection of the present utility model, after the each deposition of ITO, all can experience crystallization process, effectively promote the perfect crystallization of ITO layer.To sum up, the touch-screen that the utility model makes is high by ITO conducting film transmitance, resistivity is low, chemical stability good.
Accompanying drawing explanation
Fig. 1 is the structural representation of the utility model embodiment 1.
Fig. 2 is the structural representation of the utility model embodiment 2 and embodiment 3.
reference numeral
1---pet resin matrix
2---polyimide resin based body
3---an ITO layer
4---the 2nd ITO layer
5---the 3rd ITO layer
6---the 4th ITO layer
7---silver nanoparticle rete
8---protective film.
Embodiment
For the ease of those skilled in the art's understanding, below in conjunction with embodiment and accompanying drawing, the utility model is further described, the content that execution mode is mentioned is not to restriction of the present utility model.
embodiment 1.
See Fig. 1, a kind of touch-screen of architecture advances ITO conducting film, comprise resin matrix and be deposited on successively silver nanoparticle rete 7, an ITO layer 3, the 2nd ITO layer 4, the 3rd ITO layer 5 and the 4th ITO layer 6 of resin matrix lower surface, the thickness of described resin matrix is 100 microns, the thickness of silver nanoparticle rete 7 is 40 nanometers, and the thickness of an ITO layer 3 is 8 nanometers, and the thickness of the 2nd ITO layer 4 is 6 nanometers, the thickness of the 3rd ITO layer 5 is 4 nanometers, and the thickness of the 4th ITO layer 6 is 2 nanometers.
Described resin matrix is that Thickness Ratio is that pet resin matrix 1 and 2 pressings of polyimide resin based body of 4:1 form, and described silver nanoparticle rete 7 is deposited on polyimide resin based body 2.
A preparation method for ITO conducting film for the touch-screen of architecture advances, it comprises following preparation process successively:
Steps A, resin matrix is put into the load chamber of magnetron sputtering apparatus, after sealing, vacuumized, resin matrix is transported to sputtering chamber depositing silver nanometer rete 7 at normal temperatures, be transported to cooling chamber and be cooled to room temperature;
Step B, resin matrix are transported to sputtering chamber after being heated to 200 ℃, adopt magnetron sputtering mode to deposit, and obtain, after an ITO layer 3, being transported to cooling chamber and being cooled to room temperature;
Step C, be transported to sputtering chamber after having the resin matrix of an ITO layer 3 to be heated to 220 ℃ sputter, adopt magnetron sputtering mode to deposit, obtain, after the 2nd ITO layer 4, being transported to cooling chamber and being cooled to room temperature;
Step D, be transported to sputtering chamber after having the resin matrix of the 2nd ITO layer 4 to be heated to 230 ℃ sputter, adopt magnetron sputtering mode to carry out, obtain, after the 3rd ITO layer 5, being transported to cooling chamber and being cooled to room temperature;
Step e, be transported to sputtering chamber after having the resin matrix of the 3rd ITO layer 5 to be heated to 240 ℃ sputter, adopt magnetron sputtering mode to carry out, obtain, after the 4th ITO layer 6, being transported to cooling chamber and being cooled to room temperature;
Step F, cooled substrate in step e is put into relief chamber, unloading piece, obtains a kind of touch-screen ITO conducting film of architecture advances.
Wherein, the tin oxide that the indium oxide that described magnetron sputtering apparatus indium oxide target used is 94.5% by weight percentage and weight percentage are 5.5% forms.
Wherein, the cooling of described step B is specifically divided into:
First stage is cooling: the resin matrix that sputter is had to an ITO layer 3 is cooled to 150 ℃ with the speed of 8 ℃/h;
Insulation: 150 ℃ of insulations 2 hours;
Second stage is cooling: then with the speed of 8 ℃/h, be cooled to room temperature.
Wherein, the cooling of described step C is specifically divided into:
First stage is cooling: the resin matrix that sputter is had to a 2nd ITO layer 4 is cooled to 150 ℃ with the speed of 7 ℃/h;
Insulation: 150 ℃ of insulations 2 hours;
Second stage is cooling: then with the speed of 6 ℃/h, be cooled to room temperature.
Wherein, the cooling of described step D is specifically divided into:
First stage is cooling: the resin matrix that sputter is had to a 3rd ITO layer 5 is cooled to 150 ℃ with the speed of 6 ℃/h;
Insulation: 150 ℃ of insulations 2 hours;
Second stage is cooling: then with the speed of 5 ℃/h, be cooled to room temperature.
Wherein, the cooling of described step e is specifically divided into:
First stage is cooling: the resin matrix that sputter is had to a 4th ITO layer 6 is cooled to 150 ℃ with the speed of 4 ℃/h;
Insulation: 150 ℃ of insulations 2 hours;
Second stage is cooling: then with the speed of 2 ℃/h, be cooled to room temperature.
embodiment 2.
See Fig. 2, a kind of touch-screen of architecture advances ITO conducting film, comprise resin matrix and be deposited on successively silver nanoparticle rete 7, an ITO layer 3, the 2nd ITO layer 4, the 3rd ITO layer 5 and the 4th ITO layer 6 of resin matrix lower surface, the thickness of described resin matrix is 130 microns, the thickness of silver nanoparticle rete 7 is 50 nanometers, the thickness of the one ITO layer 3 is that the thickness of 9 nanometers, the 2nd ITO layer 4 is that the thickness of 7 nanometers, the 3rd ITO layer 5 is 5 nanometers, and the thickness of the 4th ITO layer 6 is 3 nanometers.
Described resin matrix is that Thickness Ratio is that pet resin matrix 1 and 2 pressings of polyimide resin based body of 3:1 form, and described silver nanoparticle rete 7 is deposited on polyimide resin based body 2.
The upper surface coated with protective film layer 8 of described resin matrix.
A preparation method for ITO conducting film for the touch-screen of architecture advances, it comprises following preparation process successively:
Steps A, resin matrix is put into the load chamber of magnetron sputtering apparatus, after sealing, vacuumized, resin matrix is transported to sputtering chamber depositing silver nanometer rete 7 at normal temperatures, be transported to cooling chamber and be cooled to room temperature;
Step B, resin matrix are transported to sputtering chamber after being heated to 210 ℃, adopt magnetron sputtering mode to deposit, and obtain, after an ITO layer 3, being transported to cooling chamber and being cooled to room temperature;
Step C, be transported to sputtering chamber after having the resin matrix of an ITO layer 3 to be heated to 220 ℃ sputter, adopt magnetron sputtering mode to deposit, obtain, after the 2nd ITO layer 4, being transported to cooling chamber and being cooled to room temperature;
Step D, be transported to sputtering chamber after having the resin matrix of the 2nd ITO layer 4 to be heated to 230 ℃ sputter, adopt magnetron sputtering mode to carry out, obtain, after the 3rd ITO layer 5, being transported to cooling chamber and being cooled to room temperature;
Step e, be transported to sputtering chamber after having the resin matrix of the 3rd ITO layer 5 to be heated to 240 ℃ sputter, adopt magnetron sputtering mode to carry out, obtain, after the 4th ITO layer 6, being transported to cooling chamber and being cooled to room temperature;
Step F, cooled substrate in step e is put into relief chamber, unloading piece;
The upper surface coated with protective film layer 8 of step G, pet resin matrix 1, obtains a kind of touch-screen ITO conducting film of architecture advances.
Wherein, the tin oxide that the indium oxide that described magnetron sputtering apparatus indium oxide target used is 94.5% by weight percentage and weight percentage are 5.5% forms.
Wherein, the cooling of described step B is specifically divided into:
First stage is cooling: the resin matrix that sputter is had to an ITO layer 3 is cooled to 151 ℃ with the speed of 9 ℃/h;
Insulation: 151 ℃ of insulations 3 hours;
Second stage is cooling: then with the speed of 8 ℃/h, be cooled to room temperature.
Wherein, the cooling of described step C is specifically divided into:
First stage is cooling: the resin matrix that sputter is had to a 2nd ITO layer 4 is cooled to 151 ℃ with the speed of 8 ℃/h;
Insulation: 151 ℃ of insulations 3 hours;
Second stage is cooling: then with the speed of 6 ℃/h, be cooled to room temperature.
Wherein, the cooling of described step D is specifically divided into:
First stage is cooling: the resin matrix that sputter is had to a 3rd ITO layer 5 is cooled to 151 ℃ with the speed of 6 ℃/h;
Insulation: 151 ℃ of insulations 3 hours;
Second stage is cooling: then with the speed of 5 ℃/h, be cooled to room temperature.
Wherein, the cooling of described step e is specifically divided into:
First stage is cooling: the resin matrix that sputter is had to a 4th ITO layer 6 is cooled to 151 ℃ with the speed of 4 ℃/h;
Insulation: 151 ℃ of insulations 3 hours;
Second stage is cooling: then with the speed of 3 ℃/h, be cooled to room temperature.
embodiment 3.
See Fig. 2, a kind of touch-screen of architecture advances ITO conducting film, comprise resin matrix and be deposited on successively silver nanoparticle rete 7, an ITO layer 3, the 2nd ITO layer 4, the 3rd ITO layer 5 and the 4th ITO layer 6 of resin matrix lower surface, the thickness of described resin matrix is 150 microns, the thickness of silver nanoparticle rete 7 is 60 nanometers, and the thickness of an ITO layer 3 is 10 nanometers, and the thickness of the 2nd ITO layer 4 is 7 nanometers, the thickness of the 3rd ITO layer 5 is 5 nanometers, and the thickness of the 4th ITO layer 6 is 2 nanometers.
Described resin matrix is that Thickness Ratio is that pet resin matrix 1 and 2 pressings of polyimide resin based body of 2:1 form, and described silver nanoparticle rete 7 is deposited on polyimide resin based body 2.
The upper surface coated with protective film layer 8 of described resin matrix.
A preparation method for ITO conducting film for the touch-screen of architecture advances, it comprises following preparation process successively:
Steps A, resin matrix is put into the load chamber of magnetron sputtering apparatus, after sealing, vacuumized, resin matrix is transported to sputtering chamber depositing silver nanometer rete 7 at normal temperatures, be transported to cooling chamber and be cooled to room temperature;
Step B, resin matrix are transported to sputtering chamber after being heated to 200 ℃, adopt magnetron sputtering mode to deposit, and obtain, after an ITO layer 3, being transported to cooling chamber and being cooled to room temperature;
Step C, be transported to sputtering chamber after having the resin matrix of an ITO layer 3 to be heated to 210 ℃ sputter, adopt magnetron sputtering mode to deposit, obtain, after the 2nd ITO layer 4, being transported to cooling chamber and being cooled to room temperature;
Step D, be transported to sputtering chamber after having the resin matrix of the 2nd ITO layer 4 to be heated to 220 ℃ sputter, adopt magnetron sputtering mode to carry out, obtain, after the 3rd ITO layer 5, being transported to cooling chamber and being cooled to room temperature;
Step e, be transported to sputtering chamber after having the resin matrix of the 3rd ITO layer 5 to be heated to 240 ℃ sputter, adopt magnetron sputtering mode to carry out, obtain, after the 4th ITO layer 6, being transported to cooling chamber and being cooled to room temperature;
Step F, cooled substrate in step e is put into relief chamber, unloading piece;
The upper surface coated with protective film layer 8 of step G, pet resin matrix 1, obtains a kind of touch-screen ITO conducting film of architecture advances.
Wherein, the tin oxide that the indium oxide that described magnetron sputtering apparatus indium oxide target used is 94.5% by weight percentage and weight percentage are 5.5% forms.
Wherein, the cooling of described step B is specifically divided into:
First stage is cooling: the resin matrix that sputter is had to an ITO layer 3 is cooled to 150 ℃ with the speed of 10 ℃/h;
Insulation: 155 ℃ of insulations 4 hours;
Second stage is cooling: then with the speed of 10 ℃/h, be cooled to room temperature.
Wherein, the cooling of described step C is specifically divided into:
First stage is cooling: the resin matrix that sputter is had to a 2nd ITO layer 4 is cooled to 150 ℃ with the speed of 8 ℃/h;
Insulation: 150 ℃ of insulations 4 hours;
Second stage is cooling: then with the speed of 8 ℃/h, be cooled to room temperature.
Wherein, the cooling of described step D is specifically divided into:
First stage is cooling: the resin matrix that sputter is had to a 3rd ITO layer 5 is cooled to 150 ℃ with the speed of 6 ℃/h;
Insulation: 150 ℃ of insulations 4 hours;
Second stage is cooling: then with the speed of 6 ℃/h, be cooled to room temperature.
Wherein, the cooling of described step e is specifically divided into:
First stage is cooling: the resin matrix that sputter is had to a 4th ITO layer 6 is cooled to 150 ℃ with the speed of 5 ℃/h;
Insulation: 150 ℃ of insulations 4 hours;
Second stage is cooling: then with the speed of 4 ℃/h, be cooled to room temperature.
The touch-screen that embodiment 1-3 is made carries out following performance test with ITO conducting film, refers to table 1.
(1) transmitance is measured:
Employing OLYMPUS Corporation USPM-LH(model SNo 11A1002) measure the transmitance of sample after baking, sweep limits is 380nm-780nm.
(2) sheet resistance is measured:
Adopt the impedance of Mitsubishi MCP-T360 working sample.
(3) adhesive force is measured
Adopt ZEHNTNER hundred lattice cuttves to mark the lattice 100 that is spaced apart 1 millimeter of uniform size at sample surfaces, with specific adhesive tape, firmly stick on and draw on lattice surface, firmly tear, the lattice number that statistics film comes off.
(4) acidproof mensuration
After sample is placed in to standard etching solution solution 20min completely, take out, measuring etching front and back sample sheet resistance has unchanged.
By table 1 can find out that the touch-screen that the utility model makes is high by ITO conducting film transmitance, resistivity is low, adhesive force, chemical stability is good.
Finally should be noted that; above embodiment is only in order to illustrate the technical solution of the utility model; but not restriction to the utility model protection range; although the utility model has been done to explain with reference to preferred embodiment; those of ordinary skill in the art is to be understood that; can modify or be equal to replacement the technical solution of the utility model, and not depart from essence and the scope of technical solutions of the utility model.
Claims (6)
1. the touch-screen of an architecture advances ITO conducting film, is characterized in that: comprise resin matrix and be deposited on successively silver nanoparticle rete, an ITO layer, the 2nd ITO layer, the 3rd ITO layer and the 4th ITO layer of resin matrix lower surface.
2. the touch-screen of a kind of architecture advances according to claim 1 ITO conducting film, it is characterized in that: described resin matrix is that Thickness Ratio is that pet resin matrix and the pressing of polyimide resin based body of 4:1-2:1 forms, and described silver nanoparticle rete is deposited on polyimide resin based body.
3. the touch-screen of a kind of architecture advances according to claim 1 ITO conducting film, it is characterized in that: the thickness of described resin matrix is 100-150 micron, the thickness of silver nanoparticle rete is 40-60 nanometer, the thickness of the one ITO layer is 8-10 nanometer, the thickness of the 2nd ITO layer is 6-8 nanometer, the thickness of the 3rd ITO layer is 4-6 nanometer, and the thickness of the 4th ITO layer is 2-4 nanometer.
4. the touch-screen of a kind of architecture advances according to claim 1 ITO conducting film, it is characterized in that: the thickness of described resin matrix is 120-150 micron, the thickness of described silver nanoparticle rete is 45-55 nanometer, the thickness of the one ITO layer is 7-8 nanometer, the thickness of the 2nd ITO layer is 6-7 nanometer, the thickness of the 3rd ITO layer is 4-5 nanometer, and the thickness of the 4th ITO layer is 2-3 nanometer.
5. the touch-screen of a kind of architecture advances according to claim 1 ITO conducting film, it is characterized in that: the thickness of described resin matrix is 130 microns, the thickness of described silver nanoparticle rete is 50 nanometers, the thickness of the one ITO layer is 9 nanometers, the thickness of the 2nd ITO layer is 7 nanometers, the thickness of the 3rd ITO layer is 5 nanometers, and the thickness of the 4th ITO layer is 3 nanometers.
6. the touch-screen of a kind of architecture advances according to claim 1 ITO conducting film, is characterized in that: the upper surface coated with protective film layer of described resin matrix.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201320629838.8U CN203535977U (en) | 2013-10-12 | 2013-10-12 | Touch screen ITO conductive film with improved structure |
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| CN201320629838.8U CN203535977U (en) | 2013-10-12 | 2013-10-12 | Touch screen ITO conductive film with improved structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107863181A (en) * | 2016-11-04 | 2018-03-30 | 江苏日久光电股份有限公司 | A kind of ITO conducting films |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107863181A (en) * | 2016-11-04 | 2018-03-30 | 江苏日久光电股份有限公司 | A kind of ITO conducting films |
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