CN203299680U - Reference current source circuit of compensation resistor temperature drift coefficient - Google Patents

Abstract

The utility model discloses a reference current source circuit of a compensation resistor temperature drift coefficient. The reference current source circuit comprises a bandgap reference voltage source, a voltage-current converting module, a temperature compensating current generating module and a current summation module. The output end of the bandgap reference voltage source is connected with the input end of the voltage-current converting module. The output end of the temperature compensating current generating module is connected with the current summation module. The output end of the voltage-current converting module is connected with the current summation module. The output end of the current summation module outputs zero temperature drift currents. The reference current source circuit of the compensation resistor temperature drift coefficient has the advantages that the circuit structure is simple, the stability and the reliability are high, the accurate zero temperature drift currents can be obtained, and popularization and utilization can be achieved easily.

Description

A kind of compensating resistance temperature is floated the reference current source circuit of coefficient

Technical field

The utility model relates to integrated circuit fields, is specifically related to a kind of reference current source circuit.

Background technology

In CMOS technique, the technological parameter of MOSFET generally all has relation with temperature, and temperature variation can affect every physical characteristics of MOSFET, and then affects the various performances of institute's forming circuit.And during to circuit supply, just can reduce as far as possible the impact of temperature variation on circuit with temperature independent electric current, guaranteed the stability of circuit.Reference current source circuit can produce the irrelevant reference current in a road and power supply and temperature variation, thinks other circuit module power supplies, thereby has avoided the impact of temperature variation on each circuit module performance, has guaranteed the stability of Circuits System.Therefore reference current source circuit is widely used in all kinds of simulation systems and commingled system.

At present, general reference current source circuit is by bandgap voltage reference, and voltage buffer and current mirror module form.Voltage buffer is by an operational amplifier, and the first resistance and the first transistor form.Bandgap voltage reference, for generation of a reference voltage that has nothing to do with temperature variation, produces the electric current of a road reference voltage divided by the first resistance by voltage buffer, then by the current mirror mirror image, gives other module for power supply.In this circuit, although the band-gap reference output voltage is temperature independent, resistance has temperature and floats coefficient, and the size of resistance can change along with the variation of temperature, the reference current of so last generation still can variation with temperature and is changed, so can't obtain accurate zero temp shift reference current.

Summary of the invention

For the technological deficiency that above-mentioned prior art exists, the utility model provides the reference current source circuit that a kind of stability is high, can obtain accurate zero temp shift reference current.

For solving the problems of the technologies described above, the technical scheme that the utility model is taked is: a kind of compensating resistance temperature is floated the reference current source circuit of coefficient, comprise a bandgap voltage reference, a Voltage-current conversion module, a temperature-compensated current generation module, an electric current summation module, the output of described bandgap voltage reference is connected with the input end of Voltage-current conversion module; The output terminal of described temperature-compensated current generation module is connected with the electric current summation module; The output terminal of described Voltage-current conversion module is connected with the electric current summation module; The output terminal output zero temp shift electric current of described electric current summation module.

As preferred version, described Voltage-current conversion module comprises an operational amplifier, one the first transistor, one transistor seconds, one first resistance, the positive input of described operational amplifier is connected with the output terminal of described bandgap voltage reference, and the output terminal of described operational amplifier is connected with the grid of the first transistor, and the reverse input end of described operational amplifier is connected with an end of the source class of described the first transistor and described the first resistance; Another termination power cathode of described the first resistance; The drain electrode of described the first transistor is connected with the drain electrode of described transistor seconds; The drain electrode of described transistor seconds is connected with its grid, and its source class is connected with positive source.

As preferred version, described temperature-compensated current generation module comprises a positive temperature coefficient (PTC) current generating module, a start-up circuit, and described positive temperature coefficient (PTC) current generating module is connected with start-up circuit.

As preferred version, described positive temperature coefficient (PTC) current generating module comprises the 4th, the 5th, the 6th, the 7th transistor and the second resistance, wherein the 4th transistor AND gate the 5th transistorized source class all is connected with positive source, and the 4th transistorized grid is connected and is connected to first node with the 5th transistorized grid with drain electrode; The 6th transistorized drain electrode is connected with first node, and the 7th transistorized grid is connected and is connected with the 6th transistorized grid with drain electrode; The 5th transistorized drain electrode and the 7th transistorized drain electrode are connected to Section Point; The 7th transistorized source class is connected with power cathode; The 6th transistorized source class is connected with an end of the second resistance, and the other end of the second resistance is connected with power cathode.

As preferred scheme, described start-up circuit module comprises the 9th, the the tenth, the 11, the tenth two-transistor, wherein the 9th transistorized source class is connected with positive source, and its grid and drain electrode are connected to the 3rd node, and the tenth transistorized grid and leakage level are connected to the 3rd node; The 11 transistor source class is connected with power cathode, and its grid is connected and is connected with the tenth transistorized source class with drain electrode; The leakage level of the tenth two-transistor is connected with positive source, and its grid is connected with the 3rd node, and its source electrode is connected with Section Point.

As preferred version, described electric current summation module comprises the 3rd transistor and the 8th transistor, the described the 3rd all is connected with positive source with the 8th transistorized source class, described the 3rd transistorized grid is connected with the grid of transistor seconds, and described the 8th transistorized grid is connected with described the 4th transistorized grid;

Described the 3rd transistorized drain electrode is connected with described the 8th transistorized drain electrode and exports the reference current of zero temp shift coefficient.

The good effect that the utility model can reach is: circuit structure is simple, and stability and reliability are high, can access accurate zero temp shift reference voltage, is easy to promote the use of.

The accompanying drawing explanation

Fig. 1 is the structure principle chart of the utility model circuit.

Fig. 2 is the preferred specific embodiment circuit diagram of the utility model.

Embodiment

Below in conjunction with the drawings and specific embodiments, the utility model is described in further detail.

As shown in Figure 1, a kind of compensating resistance temperature is floated the reference current source circuit of coefficient, comprise a bandgap voltage reference, a Voltage-current conversion module, a temperature-compensated current generation module, an electric current summation module, the output of described bandgap voltage reference is connected with the input end of Voltage-current conversion module; The output terminal of described temperature-compensated current generation module is connected with the electric current summation module; The output terminal of described Voltage-current conversion module is connected with the electric current summation module; The output terminal output zero temp shift electric current of described electric current summation module.

As shown in Figure 2, the compensating resistance temperature described in the utility model reference current source circuit that floats coefficient comprises bandgap voltage reference 6, one Voltage-current conversion module 1, one temperature-compensated current generation module 4, one electric current summation modules 5.Wherein said temperature-compensated current generation module 4 comprises positive temperature coefficient (PTC) current generating module 2 and start-up circuit 3.

Each module physical circuit annexation of the utility model embodiment shown in Figure 2 is: circuit power is VDD just very, and power cathode is VSS.The reference voltage Vref that bandgap voltage reference generation and power supply and temperature variation are irrelevant, the output terminal of bandgap voltage reference is connected with the positive input of operational amplifier.The output terminal of operational amplifier is connected with the grid of the first transistor M1, and the reverse input end of operational amplifier is connected with the source class of the first transistor M1 and an end of the first resistance R 1.Another termination power cathode VSS of the first resistance R 1.The source electrode of transistor seconds M2 meets positive source VDD, and the grid of transistor seconds M2 is connected with the leakage level.The 4th transistor M4 all is connected with positive source VDD with the source class of the 5th transistor M5, and the grid of the 4th transistor M4 is connected and is connected to first node D1 with the grid of the 5th transistor M5 with drain electrode.The drain electrode of the 6th transistor M6 is connected with first node D1, the grid of the 7th transistor M7 is connected and is connected to Section Point D2 with the grid of transistor M6 with drain electrode, and the drain electrode of the drain electrode of the 5th transistor M5 and the 7th transistor M7 is connected to Section Point D2.The source class of the 7th transistor M7 is connected with power cathode VSS.The source class of the 6th transistor M6 is connected with an end of the second resistance R 2, and the other end of the second resistance R 2 is connected with power cathode VSS.The source class of the 9th transistor M9 is connected with positive source VDD, and its grid and drain electrode are connected to the 3rd node D3, and the grid of the tenth transistor M10 and leakage level are connected to the 3rd node D3.The 11 transistor source class is connected with power cathode VSS, and its grid is connected and is connected with the source class of the tenth transistor M10 with drain electrode.The leakage level of the tenth two-transistor M12 is connected with positive source VDD, and its grid is connected with the 3rd node D3, and its source electrode is connected with Section Point D2.The source class of the 3rd transistor M3 is connected with positive source VDD, and its grid is connected with the grid of transistor seconds M2, and its drain electrode is as the output terminal of Voltage-current conversion module 1, output current i1.The source class of the 8th transistor M8 is connected with positive source VDD, and its grid is connected with first node D1, and its drain electrode is as the output terminal of temperature-compensated current, output current i2.The drain electrode of described the 3rd transistor M3 is connected with the drain electrode of described the 8th transistor M8, realizes the addition of current i 1 and current i 2, the reference current Iout of output zero temp shift coefficient.

In circuit the first, the six, the seven, ten, the 11, ten two-transistor is the NMOS pipe, and its substrate meets power cathode VSS, the second, the three, the four, five, and the eight, nine transistor is the PMOS pipe, its substrate meets positive source VDD.

The principle Analysis of the utility model embodiment is as follows:

The size of current i 0 is:

Wherein Vref is bandgap voltage reference, and R1 is the first resistance R 1, and because the first resistance R 1 is the resistance with positive temperature coefficient (PTC), and the Vref size is temperature independent, so i0 is the electric current with negative temperature coefficient.

The 6th transistor M6 and the 7th transistor M7 are operated in sub-threshold region, and leakage current is when metal-oxide-semiconductor is operated in sub-threshold region: $I_D=I_0\exp \frac{V_{\mathrm{GS}}}{{\mathrm{\ςV}}_T}$

Wherein: ζ is an imperfect factor, and VT=kT/q, be thermoelectrical potential, and k is Boltzmann constant, and I0 is the drain current of gate source voltage VGS while equaling threshold V T H, and its size is proportional with breadth length ratio of metal-oxide-semiconductor.

The gate source voltage of metal-oxide-semiconductor:

The size of current i 3 is: ${\mathrm{<figure-callout\; id="3"\; label="i"\; filenames="HDA00003288369000012.png"\; state="\{\{state\}\}">i</figure-callout>}}_3=\frac{V_{\mathrm{GS},M7}-V_{\mathrm{GS},M6}}{R_2}=\frac{{\mathrm{\&sigmav;V}}_T}{R_2}\mathrm{In}\frac{I_{0,M6}}{I_{0,M7}}=V_T\frac{\mathrm{\&sigmav;}}{R_2}\mathrm{In}\frac{S_6}{S_7}=\frac{\mathrm{KT}}{q}\frac{\mathrm{\&sigmav;}}{R_2}\mathrm{In}\frac{S_6}{S_7}$

Wherein, S6 and S7 are respectively the 6th and the 7th transistorized breadth length ratio, and R2 is the second resistance R 2.

Current i 1 is the image current of current i 0: i ₁=k ₁i ₀,

Current i 2 is the image current of current i 3: i ₂=k ₂i ₃,

Final reference current current i out is: i _out=k ₁i ₀+ k ₂i ₃,

Obtain thus temperature independent reference current Iout.

The the 9th to the 11 transistor all adopts the diode connection, VGS7 wherein, and VGS10, VGS11, VGS12, be respectively the seven, ten, the gate source voltage of the 11, ten two-transistor.During circuit design, to guarantee VGS10+VGS11<VGS7+VGS12, work as positive temperature coefficient (PTC) current generating module 2 and degenerate state occurs, when circuit is not worked, the voltage of Section Point D2 is in low level, due to VGS10+VGS11 > VGS7+VGS12, the tenth two-transistor M12 will conducting, makes Section Point D2 become high level, and the positive temperature coefficient (PTC) current generating module is started working.After the normal operation of positive temperature coefficient (PTC) current generating module, the tenth two-transistor M12 is in cut-off region, the integrated circuit normal operation.

The reference current source that compensating resistance temperature of the present utility model is floated coefficient can well obtain one and temperature, the reference current that power source change is irrelevant, and it is very little that the reference current temperature is floated coefficient, and power consumption is lower, and is simple in structure, is applicable to commercial production.

Above embodiment is only basic embodiment of the present utility model, but the utility model overlay content whole not, all in the spiritual scope of the utility model with the interior equivalents of being done, all will be in the utility model protection domain.

Claims (6)

1. a compensating resistance temperature is floated the reference current source circuit of coefficient, it is characterized in that: comprise a bandgap voltage reference, a Voltage-current conversion module, a temperature-compensated current generation module, an electric current summation module, the output of described bandgap voltage reference is connected with the input end of Voltage-current conversion module;

The output terminal of described temperature-compensated current generation module is connected with the electric current summation module;

The output terminal of described Voltage-current conversion module is connected with the electric current summation module;

The output terminal output zero temp shift electric current of described electric current summation module.

2. reference current source circuit according to claim 1, it is characterized in that: described Voltage-current conversion module comprises an operational amplifier, a first transistor, a transistor seconds, one first resistance,

The positive input of described operational amplifier is connected with the output terminal of described bandgap voltage reference, the output terminal of described operational amplifier is connected with the grid of the first transistor, and the reverse input end of described operational amplifier is connected with an end of the source class of described the first transistor and described the first resistance;

Another termination power cathode of described the first resistance;

The drain electrode of described the first transistor is connected with the drain electrode of described transistor seconds;

The drain electrode of described transistor seconds is connected with its grid, and its source class is connected with positive source.

3. reference current source circuit according to claim 1, it is characterized in that: described temperature-compensated current generation module comprises a positive temperature coefficient (PTC) current generating module, a start-up circuit, described positive temperature coefficient (PTC) current generating module is connected with start-up circuit.

4. reference current source circuit according to claim 3, it is characterized in that: described positive temperature coefficient (PTC) current generating module comprises the 4th, the 5th, the 6th, the 7th transistor and the second resistance, wherein the 4th transistor AND gate the 5th transistorized source class all is connected with positive source, and the 4th transistorized grid is connected and is connected to first node with the 5th transistorized grid with drain electrode;

The 6th transistorized drain electrode is connected with first node, and the 7th transistorized grid is connected and is connected with the 6th transistorized grid with drain electrode;

The 5th transistorized drain electrode and the 7th transistorized drain electrode are connected to Section Point;

The 7th transistorized source class is connected with power cathode;

The 6th transistorized source class is connected with an end of the second resistance, and the other end of the second resistance is connected with power cathode.

5. reference current source circuit according to claim 3, it is characterized in that: described start-up circuit module comprises the 9th, the the tenth, the 11, the tenth two-transistor, wherein the 9th transistorized source class is connected with positive source, its grid and drain electrode are connected to the 3rd node, and the tenth transistorized grid and leakage level are connected to the 3rd node;

The 11 transistor source class is connected with power cathode, and its grid is connected and is connected with the tenth transistorized source class with drain electrode;

The leakage level of the tenth two-transistor is connected with positive source, and its grid is connected with the 3rd node, and its source electrode is connected with Section Point.

6. reference current source circuit according to claim 4, it is characterized in that: described electric current summation module comprises the 3rd transistor and the 8th transistor, the described the 3rd all is connected with positive source with the 8th transistorized source class, described the 3rd transistorized grid is connected with the grid of transistor seconds, and described the 8th transistorized grid is connected with described the 4th transistorized grid;

Described the 3rd transistorized drain electrode is connected with described the 8th transistorized drain electrode and exports the reference current of zero temp shift coefficient.

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