CN203277379U - Bus bar connecting type high-performance IGBT module - Google Patents
Bus bar connecting type high-performance IGBT module Download PDFInfo
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- CN203277379U CN203277379U CN2013203163482U CN201320316348U CN203277379U CN 203277379 U CN203277379 U CN 203277379U CN 2013203163482 U CN2013203163482 U CN 2013203163482U CN 201320316348 U CN201320316348 U CN 201320316348U CN 203277379 U CN203277379 U CN 203277379U
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/37147—Copper [Cu] as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/4005—Shape
- H01L2224/4009—Loop shape
- H01L2224/40091—Arched
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- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/77—Apparatus for connecting with strap connectors
- H01L2224/7725—Means for applying energy, e.g. heating means
- H01L2224/77272—Oven
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
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- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
- H01L2224/848—Bonding techniques
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- Engineering & Computer Science (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The utility model relates to a bus bar connecting type high-performance IGBT module and belongs to the technical field of power semiconductor devices and power electronics, which mainly solves the problems in the prior art that due to the adoption of the aluminum wire bonding technique, a chip and a junctor are small in contact area and both the surge current capability and the overload capacity of an IGBT device are too poor to debase the operation reliability of the IGBT device. The bus bar connecting type high-performance IGBT module is mainly characterized by comprising a casing, a bottom plate, an electrode, a semiconductor chip, a DBC, an electrode, a bus bar, a molybdenum plate, solder and the like, wherein the semiconductor chip, the DBC, the electrode, the bus bar, the molybdenum plate, the solder and the like are packaged in the casing. The chip, the DBC and the electrode are mutually connected through the bus bar, wherein the connection mode of the bus bar is realized in such a way that all parts are orderly assembled in a special fixture, fastened and then welded in a vacuum furnace. According to the technical scheme of the utility model, the frequency characteristics of the IGBT device are obviously improved and the switching performance of the device is improved. The bus bar connecting type high-performance IGBT module is especially applicable to high-frequency, large-power and high-reliability semiconductor devices. Compared with the prior art, the investment is saved, and the production and machining cycle is shortened.
Description
Technical field
The utility model belongs to semiconductor device and electric and electronic technical field.Be specifically related to a kind of power semiconductor, be mainly used in the great power conversion circuit power supply, as frequency converter, motor soft starter, traction power source, UPS etc.
Background technology
The IGBT module be a kind of can be from the Novel power semiconductor that turn-offs, in a shell, its core component is igbt chip with one or two or many igbt chips and other semiconductor device chip package.Existing IGBT modular structure as shown in Figure 2, comprise shell, base plate 6, DBC plate (ceramic double face copper) 5, electrode 1, aluminium wire 8,10, molybdenum sheet 3, IGBT(igbt) chip 9, grid lead 7, wherein igbt chip 9, DBC plate 5, electrode 1 connect by aluminium wire 8,10 each other.The common manufacture process of IGBT module is successively chip-weld tabs-DBC plate to be assembled in specific fixture, then puts into vacuum furnace and be welded into chip assembly; Then beat aluminium wire between chip and DBC connects according to circuit topology---and be bonding, then with electrode, weld tabs with to accomplish fluently the chip assembly assembling of aluminium wire fixing, send into and carry out high-temperature soldering in vacuum furnace or chain-conveyer furnace and become circuit board; Last mounting base, shell and other structural member, and inject insulation filling glue.The chain-conveyer furnace welding is simple, efficient is high, usually adds hydrogen shield can improve welding quality.The voidage of vacuum welding is lower.
Said method and structure are at present typical IGBT encapsulation technologies, and process is comparatively simple, feasible, and cost is lower, and the product of production and equipment needed thereby, technology are all more ripe, are widely used.But because igbt chip 9, DBC plate 5, electrode 1 connect by aluminium wire 8,10 each other, thereby there are contacting not fully between chip and tie, the surge current ability of IGBT device and the problem that overload capacity is not high enough, the device functional reliability is not high enough.
Summary of the invention
The purpose of this utility model is to provide a kind of making and has larger contact area and reliable and stable between chip and tie, thus can obviously improve the surge current ability of IGBT device and overload capacity, the work of raising device reliability, improve the busbar articulated high-performance IGBT module of devices switch performance.
Technical solution of the present utility model is: a kind of busbar articulated high-performance IGBT module, comprise shell, base plate, DBC plate, electrode, semiconductor chip, grid lead, electrode is fixed on the DBC plate, the DBC plate is fixed on base plate, semiconductor chip is welded on the DBC plate, it is characterized in that: described semiconductor chip, DBC plate, electrode connect by busbar each other.
Also be welded with molybdenum sheet between semiconductor chip described in the technical solution of the utility model busbar articulated high-performance IGBT module and busbar.
Semiconductor chip described in the technical solution of the utility model busbar articulated high-performance IGBT module can be igbt chip, can be also rectifier tube chip, thyristor chip or other semiconductor chip.
Busbar material described in the technical solution of the utility model busbar articulated high-performance IGBT module is copper or copper alloy.
Perfusion silicon gel in shell described in the technical solution of the utility model busbar articulated high-performance IGBT module.
The utility model connects because chip adopts busbar, than traditional aluminium wire bonding, make to have larger contact area and reliable and stable between semiconductor chip and tie, can obviously improve surge current ability and the overload capacity of IGBT device, improve the reliability of device work.Simultaneously because busbar is monomer and aluminium wire needs multiply in parallel usually, the stray inductance amount of circuit self is very small, can significantly improve the frequency characteristic of IGBT device, improves the switch performance of device.Therefore, the utility model to high frequency, high-power, high reliability semiconductor device is very applicable.
The utility model has been owing to having cut aluminium wire bonding link and correlated process than conventional method, twice assembly welding and the whole process of aluminium wire bonding can be merged into assembly welding one time, saved investment, shortened the production and processing cycle.
The manufacture method that the utility model relates to and technology are not only applicable to igbt chip and module, are applicable to other semiconductor chip and module yet, as rectifying tube, thyristor etc.
Description of drawings
Fig. 1 is busbar articulated high-performance IGBT inside modules structure chart.
Fig. 2 is crude aluminum silk bonding IGBT inside modules structure chart.
Fig. 3 is busbar-molybdenum sheet-chip welded structure figure.
Fig. 4 is two unit IGBT sample external form figure.
Embodiment
The below introduces busbar articulated high-performance IGBT module take the IGBT module of Unit two as example:
The busbar articulated high-performance IGBT module of Unit two comprises grid lead 7 and the busbar 2 between shell 13, base plate 6, DBC plate 5, electrode 1, semiconductor chip 4, module grid and igbt chip grid, auxiliary source electrode and chip source electrode.Electrode 1 is 3, is separately fixed on 1 block of (or polylith be separated from each other) DBC plate 5.1 block of (or polylith) DBC plate 5 all is welded on base plate 6, and is same as the prior art.Semiconductor chip 4 is igbt chip, is welded on DBC plate 5.Semiconductor chip can be also rectifier tube chip, thyristor chip or other semiconductor chip.Busbar 2 materials are copper or copper alloy, and basic configuration is the band shape with better toughness, do the bending processing according to space and circuit trend.Semiconductor chip 4, DBC plate 5, electrode 1 connect by busbar 2 each other.Low power semiconductor chip and busbar can directly weld, i.e. semiconductor chip-weld tabs-busbar.The large-power semiconductor chip is directly unsuitable and busbar welding, because semiconductor chip is generally silicon materials, busbar is generally copper material, both thermal coefficient of expansion gaps are very large, directly welding can produce the stress that is difficult for elimination in semiconductor chip, and certainly lead to cold cycling when working due to semiconductor device, can aggravate the growth of these stress, thereby cause device fatigue, inefficacy.Solution is to add molybdenum sheet 3 on semiconductor chip 4 surfaces, namely fits together and fixes by semiconductor chip-weld tabs-molybdenum sheet-weld tabs-busbar successively, then welding.By inlet, pour into the silicon gel in the interior circuit unit of shell 13.Grid sheet 12 is identical with the source piece shape, is fixed in shell, is connected with external circuit by connector.Screw assemblies 14 is used for fastening electrode and external circuits.
The manufacture method of the busbar articulated high-performance IGBT module of Unit two comprises the following steps:
1) raw material inspection: check respectively DBC plate 5, busbar, electrode 1, semiconductor chip, base plate 6, shell 13;
2) DBC plate 5 is made: cut out the DBC plate of appropriate size, according to circuit topology, go out the domain of needs in the surface etch of DBC plate, determine position and the circuit of chip, electrode;
3) terminal busbar assembling: the parts such as semiconductor chip, scolder 11, DBC plate 5, busbar 2, electrode 1 are overlayed in special-purpose fixture successively, and location, fastening;
4) vacuum-sintering or reflow soldering: the fixture that assembles is put into vacuum furnace by part, evenly be well placed; In the welding process phase I, be warming up in the process of welding temperature and need repeatedly vacuumize and inflated with nitrogen, during near the temperature of defined, be filled with hydrogen or formic acid gas to maintaining an equal level with ambient pressure when temperature; In the welding process second stage, keep being no less than the constant temperature of 5 minutes in 220 ~ 350 ° of C scopes, to weld afterwards, weldering vacuumizes after finishing; In the welding process phase III, not to be cooled to room temperature higher than 15 ° of C per minute, be filled with nitrogen in temperature-fall period after vacuumizing.Each stage vacuum is lower than 2 * 10
-3Pa;
Perhaps the fixture that assembles is placed in successively the import of continuous tunnel furnace, the running speed of continuous tunnel furnace crawler belt is set as approximately 0.004 meter of per second, control continuous tunnel furnace welding section temperature in 220 ~ 350 ° of C scopes, need logical hydrogen shield in welding whole process, carry out reflow soldering, take out fixture from the continuous tunnel furnace outlet;
After welding is completed, take fixture apart, take out circuit board assemblies; Survey with the circuit board assemblies that x-ray scanning instrument or the butt welding of ultrasonic scanning Electronic Speculum connect, reject the undesirable goods of voidage;
5) shell is installed: circuit board assemblies, base plate, plastic casing and other structural member are assembled on request, arranged;
6) encapsulating protection: by inlet, pour into the silicon gel in circuit unit;
7) high temperature ageing: in 120 ~ 160 ° of C temperature ranges, carry out 8 ~ 24 hours aging;
8) terminal moulding: with electrode terminal bending, the shaping, fixing of drawing;
9) finished product test and sign packing: the laggard rower of finished product test shows packing.
Claims (5)
1. busbar articulated high-performance IGBT module, comprise shell (13), base plate (6), DBC plate (5), electrode (1), semiconductor chip (4), grid lead (7), electrode 1 is fixed on DBC plate (5), DBC plate (5) is fixed on base plate (6), semiconductor chip is welded on DBC plate (5), it is characterized in that: described semiconductor chip, DBC plate (5), electrode (1) connect by busbar (2) each other.
2. busbar articulated high-performance IGBT module according to claim 1, is characterized in that: also be welded with molybdenum sheet (3) between described semiconductor chip (4) and busbar (2).
3. busbar articulated high-performance IGBT module according to claim 1 and 2, it is characterized in that: described semiconductor chip (4) is igbt chip, rectifier tube chip, thyristor chip or other semiconductor chip.
4. busbar articulated high-performance IGBT module according to claim 1 and 2 and preparation method thereof, it is characterized in that: described busbar (2) material is copper or copper alloy.
5. busbar articulated high-performance IGBT module according to claim 1 and 2 and preparation method thereof, is characterized in that: perfusion silicon gel in described shell (13).
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013203163482U CN203277379U (en) | 2013-05-31 | 2013-05-31 | Bus bar connecting type high-performance IGBT module |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2013203163482U CN203277379U (en) | 2013-05-31 | 2013-05-31 | Bus bar connecting type high-performance IGBT module |
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| CN203277379U true CN203277379U (en) | 2013-11-06 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103607102A (en) * | 2013-12-04 | 2014-02-26 | 西安永电电气有限责任公司 | IGBT (Insulated Gate Bipolar Transistor) module and control method thereof |
| CN104218031A (en) * | 2013-05-31 | 2014-12-17 | 湖北台基半导体股份有限公司 | Busbar connection type high-performance IGBT (insulated gate bipolar transistor) module and manufacturing method thereof |
-
2013
- 2013-05-31 CN CN2013203163482U patent/CN203277379U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104218031A (en) * | 2013-05-31 | 2014-12-17 | 湖北台基半导体股份有限公司 | Busbar connection type high-performance IGBT (insulated gate bipolar transistor) module and manufacturing method thereof |
| CN104218031B (en) * | 2013-05-31 | 2017-10-24 | 湖北台基半导体股份有限公司 | Busbar articulated high-performance IGBT module and preparation method thereof |
| CN103607102A (en) * | 2013-12-04 | 2014-02-26 | 西安永电电气有限责任公司 | IGBT (Insulated Gate Bipolar Transistor) module and control method thereof |
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Granted publication date: 20131106 Termination date: 20180531 |
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| CF01 | Termination of patent right due to non-payment of annual fee |