CN110571204A - Bidirectional switch power device with double-sided heat dissipation capability and manufacturing method - Google Patents
Bidirectional switch power device with double-sided heat dissipation capability and manufacturing method Download PDFInfo
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- H01L23/5385—Assembly of a plurality of insulating substrates
Abstract
the invention relates to the technical field of power electronic device packaging, and provides a novel double-sided heat-dissipation silicon-based IGBT (insulated gate bipolar translator) bidirectional switch module, which is a bidirectional switch power device with double-sided heat dissipation capability and consists of two groups of IGBT chips, a freewheeling diode chip, a power terminal, a signal terminal, a buffer layer, coarse aluminum wires, epoxy resin plastic sealing glue, a lower ceramic copper-clad substrate DBC with two collector convergence structures and an upper ceramic copper-clad substrate DBC as a common emitter convergence structure; two groups of IGBT chips and a freewheeling diode parallel branch group are connected with a lower ceramic copper-clad substrate DBC substrate through a nano-silver low-temperature sintering method, then a gate pole of a silicon-based IGBT is led out through lead bonding, and the silicon-based semiconductor chip is connected with another upper ceramic copper-clad substrate DBC substrate serving as a common emitter bus structure through a buffer layer, so that a circuit capable of conducting in two directions is realized. The invention is mainly applied to the design and manufacture occasions of power electronic devices.
Description
Technical Field
the invention relates to the technical field of power electronic device packaging, in particular to a bidirectional switch power device with double-sided heat dissipation capacity and a manufacturing method thereof.
Background
insulated Gate Bipolar Transistors (IGBTs) are the main power devices in the power electronics industry because of their low driving power, high input impedance, fast switching speed, low on-state voltage drop, high current-carrying density, high blocking voltage, and the like. The IGBT is adopted for power conversion, so that the power utilization efficiency and quality can be improved, the IGBT has the characteristics of high efficiency, energy conservation and environmental protection, is a key supporting technology for solving the problem of energy shortage and reducing carbon emission, and is called as a CPU (Central processing Unit) and a core of green economy of a power conversion product.
The bidirectional switch can control current to be conducted in two directions and is a core device for forming a switch matrix of the matrix converter, the matrix converter can realize AC-AC conversion through the switch matrix, a direct current branch chain is omitted, and a large and expensive energy storage element is not needed, so that the bidirectional switch becomes a preferred solution for bidirectional power transmission between an AC power supply and a load in industrial application, and is widely applied to motor driving of electric automobiles, aerospace, rolling mills, elevators, centrifuges and the like. In addition, the bidirectional switch has wide application in the treatment of renewable energy sources. One of the important trends in matrix converters is miniaturization and lightness, which brings the benefits of energy saving and cost reduction, and also aims to meet the size requirements in practical applications. In order to miniaturize and lighten the matrix converter, it is necessary to further compact and integrate the switch matrix, and thus a miniaturized and lightened bidirectional switch matrix module is essential. However, such a demand leads to an increase in current density in the bidirectional switch module, which generates a large amount of heat inside the module, thereby causing an increase in the temperature saving, and if the module cannot discharge the heat in a timely manner, the high temperature saving inevitably has a bad influence on the thermo-mechanical performance and reliability of the entire module.
the double-sided heat dissipation structure of the module enables heat generated by the chip to be dissipated from two directions, so that heat dissipation performance of the module is greatly improved.
However, in the service process of the module with the double-sided heat dissipation structure, the connection layer is the weakest part, and the reliability problem becomes more prominent, because the module can continuously experience the impact of temperature cycle in the long-term service process, and the chip, the buffer layer, the substrate and the connection layer between the chip and the substrate have the difference of thermal expansion coefficients, so that the module can bear larger thermal mechanical stress, and meanwhile, due to the action of the thermal stress, the creep can continuously occur in the connection layer until cracks are generated, so that the connection layer fails, and the whole module fails. In addition, a solder alloy (such as Sn-Pb eutectic solder alloy) is generally selected as a connecting layer in a traditional bidirectional switch module, and after reflow, the solder is completely dissolved to form the connecting layer, however, due to the lower melting point and the lower working temperature (<300 ℃), the high-temperature creep resistance of the connecting layer is weaker, and the problem that the connecting layer of the module becomes unreliable is more prominent.
The bond wires in conventional bidirectional switch modules are difficult to withstand high currents for long periods of time, often being weak parts of the module, and this problem must be addressed in order to increase module reliability.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention aims to provide a double-sided heat dissipation silicon-based IGBT bidirectional switch module based on a nano-silver solder paste low-temperature sintering technology. Therefore, the invention adopts the technical scheme that the bidirectional switch power device with double-sided heat dissipation capability comprises two groups of IGBT chips, two groups of freewheeling diode chips, a power terminal, a signal terminal, a buffer layer, coarse aluminum wires, epoxy resin plastic sealing glue, a lower ceramic copper-clad substrate DBC with two collector bus structures and an upper ceramic copper-clad substrate DBC as a common emitter bus structure; two groups of IGBT chips and a freewheeling diode parallel branch group are connected with a lower ceramic copper-clad substrate DBC substrate by a nano-silver low-temperature sintering method, then a gate pole of a silicon-based IGBT is led out by lead bonding, and the silicon-based semiconductor chip is connected with another upper ceramic copper-clad substrate DBC substrate serving as a common emitter bus structure by a buffer layer, so that a circuit capable of conducting in two directions is realized; the power and signal terminals enable the module to conduct power and signal currents with the outside; one end of the power terminal is placed on a collector bus structure of the lower ceramic copper-clad substrate DBC, and the buffer layer can relieve the effect of module internal stress caused by the connection of an emitter of the IGBT chip and the upper DBC; the thick aluminum wire can lead the gate electrode of the IGBT chip out to an electrode area of the lower DBC, and the electrode area is connected with a signal terminal, so that the voltage of the gate electrode of the IGBT chip is controlled by the outside; and finally, the IGBT bidirectional switch module is prepared by epoxy resin plastic packaging and glue plastic packaging.
the IGBT chips are connected with the branch circuit group in parallel, and a plurality of IGBT chips and freewheeling diode chips are connected in parallel in an inverse manner on each DBC substrate; the number ratio of the IGBT chips to the freewheeling diode chips is 1: 1.
According to the double-sided heat dissipation structure, the collector electrode of the silicon-based IGBT chip is connected with the lower DBC substrate through the sintered nano silver solder paste, the emitter electrode of the silicon-based IGBT chip is connected with the upper DBC substrate through the buffer layer, the chip is connected with the buffer layer and the buffer layer is connected with the upper DBC substrate, and therefore heat generated inside the module is discharged from the two directions of the collector electrode and the emitter electrode of the chip; the collector bus structure is a structure insulated from other parts of the DBC substrate on the lower DBC substrate, and the cathode of the diode chip is electrically connected with the collector of the corresponding IGBT chip; the emitter bus structure is a structure for realizing connection of all IGBT emitters and all diode anodes on the upper DBC substrate, and the common emitter connection is realized by the bidirectional switch through the structure.
The method for manufacturing the bidirectional switch power with double-sided heat dissipation capacity comprises the following steps:
firstly, printing a layer of 30-40 mu m single-layer nano-silver soldering paste on a region to be connected of an emitter of the silicon-based IGBT by a screen printing mode, and attaching a buffer layer to the region printed with the soldering paste;
secondly, printing a layer of 30-40 mu m single-layer nano-silver soldering paste on the to-be-connected area of the ceramic copper-clad DBC substrate in a screen printing mode, and pasting the chip with the buffer layer on the area printed with the soldering paste;
Thirdly, heating the printed soldering paste to 90-120 ℃, preserving heat for 5-15 minutes and preheating, wherein the purpose of preheating is to ensure the wettability of the soldering paste and simultaneously enable the soldering paste to become relatively dry, so that the soldering paste is convenient to be connected with a chip or a substrate and then hot-pressed;
fourthly, placing the DBC pasted with the chip in formic acid/nitrogen atmosphere, applying pressure of 5-10MPa, heating to 270-290 ℃, and preserving heat to complete sintering.
The sintering of the nano silver solder paste can also adopt pressureless sintering in formic acid/nitrogen atmosphere.
The concrete steps are further detailed as follows:
Cleaning a lower DBC substrate, and carrying out ultrasonic cleaning pretreatment on the lower DBC substrate: firstly, ultrasonically cleaning a DBC substrate by using absolute ethyl alcohol, removing pollutant particles possibly existing on the surface of the substrate by a physical oscillation method, and then drying the surface of the DBC substrate by using a nitrogen gun;
Printing nano-silver soldering paste, namely printing a layer of 30-micrometer single-layer nano-silver soldering paste on the to-be-connected area of the semiconductor chip and the DBC substrate in a screen printing mode;
Step three, patch assembly: firstly, a chip mounter is used for pasting a buffer layer on a soldering paste printing area of a semiconductor chip, then the semiconductor chip pasted with the buffer layer is pasted on the soldering paste printing area of a lower DBC substrate, the lower DBC substrate pasted with the chip is placed in a primary welding fixture, and a power terminal and a signal terminal are assembled;
Step four, welding for one time. Placing the assembled module in a heating furnace for sintering, firstly heating a workpiece to be welded to 100 ℃, preheating for 10min, then applying 5MPa pressure to the solder paste in a formic acid/nitrogen atmosphere, heating to 280 ℃, and preserving heat to complete sintering;
and step five, wire bonding, wherein one end of the coarse aluminum wire is connected with the gate electrode of the silicon-based IGBT chip, the other end of the coarse aluminum wire is connected with the electrode area of the DBC substrate, and the electrode area is connected with a signal terminal, so that the control of the gate electrode voltage of the IGBT chip is realized. The emitter of the silicon-based IGBT chip is connected with the upper DBC substrate through the buffer layer, so that the bonding height of the aluminum wire cannot exceed the height of the buffer layer;
Step six, secondary welding: firstly, cleaning an upper DBC substrate according to the first step, printing soldering paste on the upper DBC substrate according to the second step, preheating the upper DBC substrate in a heating device at 100 ℃ for 10min, then assembling the upper DBC substrate with a lower DBC substrate, placing the assembled module in a heating furnace, applying pressure of 5MPa to the soldering paste for heating, and ensuring that a connection layer after sintering is compact and the connection strength can reach more than 25 MPa;
And step seven, plastic packaging, namely filling the gaps in the module with epoxy resin plastic packaging glue, and forming a protective shell and a protective module.
the invention has the characteristics and beneficial effects that:
(1) Double-sided heat dissipation silicon-based IGBT bidirectional switch module based on low-temperature sintering nano-silver solder paste interconnection technology, through reasonable structural design, make the produced heat of chip in the module spill from two directions, thereby the heat dispersion of very big improvement module, compare with the single face heat dissipation bidirectional switch module of the same grade, heat dispersion promotes about 70%, and power current no longer flows through the lead bonding simultaneously, thereby make the module have the advantage of high reliability and low parasitic inductance value. The structure simultaneously realizes the common emitter connection of the bidirectional switch, and is beneficial to simplifying subsequent driving. In addition, the high symmetry of the structure also enables the switching electrical performance of the two loops of the bidirectional switch to have good consistency.
(2) all the interconnection layers of the double-sided heat-dissipation silicon-based IGBT bidirectional switch module based on the low-temperature sintering nano-silver solder paste interconnection technology are formed by low-temperature pressure sintering of the nano-silver solder paste, so that the thermal resistance and the resistance of the module are further reduced, more importantly, the thermal mechanical stress of the module is relaxed due to the low elastic modulus of the sintered nano-silver solder paste, and the connection layer has excellent high-temperature creep resistance due to the high melting point of the sintered silver solder paste connection layer, so that the module has high reliability.
description of the drawings:
FIG. 1 shows a lower ceramic copper-clad substrate used in the present invention.
FIG. 2 shows an upper ceramic copper-clad substrate used in the present invention.
FIG. 3 is a schematic diagram of a module for completing one-time soldering and bonding according to the present invention.
FIG. 4 is a schematic diagram of the assembly of a double-sided heat-dissipation silicon-based IGBT bidirectional switch module based on the low-temperature sintering nano-silver solder paste interconnection technology.
Fig. 5 is a diagram of the final product of the invention.
Fig. 6 shows a circuit implemented by the present invention.
the power module comprises a 1-signal terminal, a 2-power terminal, a 3-silicon-based IGBT chip, a 4-silicon-based diode chip, a 5-buffer layer, a 6-lower ceramic copper-clad substrate collector bus structure, a 7-coarse aluminum wire and an 8-plastic package shell.
Detailed Description
The invention discloses a double-sided heat dissipation silicon-based IGBT bidirectional switch module based on a nano-silver solder paste low-temperature sintering technology.
in consideration of the high requirement of the module on the heat dissipation performance, the silicon-based IGBT bidirectional switch module provided by the invention has the advantages that the heat generated by the module can be dissipated from two directions through reasonable structural design, and the heat dissipation performance is improved by about 70% compared with a commercial bidirectional switch module of the same grade. In addition, the structure design realizes common emitter connection of the bidirectional switch, thereby facilitating subsequent driving, and simultaneously, the structure can ensure that power current does not flow through a bonding lead any more, thereby improving the reliability of the module and reducing the parasitic inductance value of the module. Due to the high symmetry of the structure, the parasitic parameters of the two paths of the bidirectional switch are basically consistent (through numerical simulation analysis, when the module is electrified with 10kHz alternating current, the parasitic inductance values of the two paths are both 6.1nH), so that the switching electrical performance of the module is enabled to have good consistency.
Meanwhile, in order to overcome the problem of the volatile effect of the connecting layer caused by the structure, nano silver solder paste is used as the material of all the interconnecting layers in the bidirectional switch module, because in the manufacturing of the power module, compared with the traditional solder alloy, the electric conductivity and the heat conductivity of the sintered nano silver solder paste are about 3-5 times of those of lead-free solder and other conductive adhesives, and the sintered silver solder paste with the porous structure has relatively low elastic modulus (9GPa), so that the thermomechanical stress caused by the mismatch of the thermal expansion coefficients of the components in the module can be relieved. In addition, the high melting point (960 ℃) of the sintered silver solder paste joint layer enables the joint layer to have excellent high-temperature creep resistance.
According to the bidirectional switching power module with double-sided heat dissipation capability and based on the IGBT chip packaged by the low-temperature sintering nano-silver soldering paste, the module has double-sided heat dissipation capability through structural design, common emitters are connected, power current does not flow through a bonding lead any more, and meanwhile, the nano-silver soldering paste is selected for a weak connecting layer, so that the module has excellent heat dissipation capability and excellent reliability.
the technical scheme adopted by the invention is as follows:
A double-sided heat dissipation silicon-based IGBT bidirectional switch module based on a low-temperature sintering nano silver solder paste interconnection technology; the LED module comprises two groups of IGBT chips and freewheeling diode chips with double surfaces plated with metal films, a power terminal, a signal terminal, a buffer layer, a coarse aluminum wire, epoxy resin plastic sealant, a lower ceramic copper-clad substrate (DBC substrate) with two collector bus structures and an upper ceramic copper-clad DBC substrate serving as a common emitter bus structure, wherein the IGBT chips and the freewheeling diode chips are provided with double surfaces weldable by plating metal films on the two surfaces; two groups of IGBT chips and a freewheeling diode parallel branch group are connected with a lower DBC substrate by a nano-silver low-temperature sintering method, then a gate pole of a silicon-based IGBT is led out by lead bonding, and the silicon-based semiconductor chip is connected with another upper DBC substrate serving as a common emitter bus structure by a buffer layer, so that a circuit capable of being conducted in two directions is realized; and finally, the IGBT bidirectional switch module is prepared through plastic packaging.
The silicon-based IGBT chip needs to be plated with metal films of titanium, nickel and silver on an emitting electrode so as to enable the silicon-based IGBT chip to have double-sided weldability, so that a collector electrode of the IGBT chip can be connected with a lower DBC substrate through sintered nano-silver soldering paste, and the emitting electrode of the IGBT chip can be connected with a buffer layer through sintered nano-silver soldering paste.
The IGBT chips are connected with the branch circuit group in parallel, and a plurality of IGBT chips and freewheeling diode chips are connected in parallel in an inverse manner on each DBC substrate; the number ratio of the IGBT chips to the freewheeling diode chips is 1: 1.
Structurally, in the double-sided heat dissipation structure, the collector of the silicon-based IGBT chip is connected with the lower DBC substrate through the sintered nano silver solder paste, the emitter of the silicon-based IGBT chip is connected with the upper DBC substrate through the buffer layer, and the chip is connected with the buffer layer, the buffer layer and the upper DBC substrate, so that heat generated inside the module is discharged from the two directions of the collector and the emitter of the chip, and the heat dissipation performance is improved by about 70%; the collector bus structure is a structure on the lower DBC substrate which is insulated from other parts of the DBC substrate, and as shown in 6 in the attached drawing 3, the cathode of the diode chip is electrically connected with the collector of the corresponding IGBT chip; the emitter bus structure is a structure for realizing connection of all IGBT emitters and all diode anodes on the upper DBC substrate, and the bidirectional switch realizes common emitter connection through the structure.
aiming at the connecting layer with weak structure, the nano-silver soldering paste is selected as the connecting material, and the excellent heat conduction and electric conduction performance of the nano-silver is utilized, so that the thermal resistance and the electric resistance of the module are further reduced, more importantly, the thermal mechanical stress of the module is relaxed due to the lower elastic modulus of the sintered nano-silver soldering paste, and the high-temperature creep resistance of the connecting layer is enabled to be excellent by the high-melting point of the sintered silver soldering paste, so that the reliability of the module is greatly improved; the low-temperature pressure sintering method of the nano negative solder paste comprises the following steps: firstly, printing a layer of 30-40 mu m single-layer nano-silver soldering paste on a region to be connected of an emitter of the silicon-based IGBT by a screen printing mode, and attaching a buffer layer to the region printed with the soldering paste; secondly, printing a layer of 30-40 mu m single-layer nano-silver soldering paste on the to-be-connected area of the DBC substrate in a screen printing mode, and pasting the chip pasted with the buffer layer on the area printed with the soldering paste; and thirdly, placing the DBC substrate with the attached chip in a formic acid environment, and applying pressure and heating at 5-10 MPa.
The concrete description is as follows:
a double-sided heat dissipation silicon-based IGBT bidirectional switch module based on a low-temperature sintering nano silver solder paste interconnection technology is composed of two groups of IGBT chips with double-sided weldability, a freewheeling diode chip, a power terminal, a signal terminal, a buffer layer, a coarse aluminum wire, a lower DBC substrate with two collector electrode bus structures, an upper DBC substrate serving as a common emitter bus structure, and epoxy resin plastic package glue; two groups of IGBT chips and a freewheeling diode parallel branch group are connected with a lower DBC substrate with two collector bus structures by a nano-silver low-temperature sintering method, and are connected with another upper DBC substrate serving as a common emitter bus structure by a buffer layer, so that a circuit capable of being conducted in two directions is realized; then the IGBT bidirectional switch module is prepared through plastic encapsulation; compared with commercial silicon-based IGBT bidirectional switch modules of the same grade, the silicon-based IGBT bidirectional switch module has good electrical performance, lower thermal resistance and better heat dissipation characteristic; compared with a double-sided heat dissipation structure module adopting the traditional solder alloy, all the interconnection layers in the module are formed by low-temperature pressure sintering of the nano-silver solder paste, so that the thermal resistance and the resistance of the module are further reduced, more importantly, the thermal mechanical stress of the module is relaxed due to the lower elastic modulus of the sintered nano-silver solder paste, and the connection layer has excellent high-temperature creep resistance due to the high melting point of the sintered silver solder paste connection layer, so that the module has high reliability.
The IGBT chips are connected with the branch circuit group in parallel, and a plurality of IGBT chips and freewheeling diode chips are connected in parallel in an inverse manner on each DBC substrate; the number ratio of the IGBT chips to the freewheeling diode chips is 1: 1. the diode enhances the reverse blocking capability of the bidirectional switch on one hand and provides protection for the IGBT during commutation on the other hand.
Structurally, in the double-sided heat dissipation structure, the collector of the silicon-based IGBT chip is connected with the lower DBC substrate through the sintered nano silver solder paste, the emitter of the silicon-based IGBT chip is connected with the upper DBC substrate through the buffer layer, and the chip is connected with the buffer layer, the buffer layer and the upper DBC substrate, so that heat generated inside the module is discharged from the two directions of the collector and the emitter of the chip, and the heat dissipation performance is improved by about 70%; the collector bus structure is a structure on the lower DBC substrate which is insulated from other parts of the DBC substrate, and as shown in 6 in the attached drawing 3, the cathode of the diode chip is electrically connected with the collector of the corresponding IGBT chip; the emitter bus structure is a structure for realizing connection of all IGBT emitters and all diode anodes on the upper DBC substrate, and through the structure, the bidirectional switch realizes common emitter connection, which is very beneficial to subsequent simplified driving; molybdenum or a molybdenum-copper alloy is preferably used for the buffer layer because the thermal expansion coefficient of the buffer layer is close to that of silicon and the thermal mechanical stress on the silicon-based chip is small when the temperature changes, but a copper block may be used for the buffer layer because the molybdenum has poor machinability and a low thermal conductivity, and in addition, the surface of the buffer layer should be plated with silver to enhance the weldability regardless of the metal used.
The low-temperature pressure sintering method of the nano negative solder paste comprises the following steps: firstly, printing a layer of 30-40 mu m single-layer nano-silver soldering paste on a region to be connected of an emitter of the silicon-based IGBT by a screen printing mode, and attaching a buffer layer to the region printed with the soldering paste; secondly, printing a layer of 30-40 mu m single-layer nano-silver soldering paste on the to-be-connected area of the ceramic copper-clad DBC substrate in a screen printing mode, and pasting the chip with the buffer layer on the area printed with the soldering paste; thirdly, heating the printed soldering paste to 90-120 ℃, preserving heat for 5-15 minutes and preheating, wherein the purpose of preheating is to ensure the wettability of the soldering paste and simultaneously enable the soldering paste to become relatively dry, so that the soldering paste is convenient to be connected with a chip or a substrate and then hot-pressed; fourthly, placing the DBC pasted with the chip in formic acid/nitrogen atmosphere, applying pressure of 5-10MPa, heating to 270-290 ℃, and preserving heat to complete sintering. If the temperature is too high, the crystal grains of the connecting layer can be grown, so that the performance of the connecting layer is deteriorated, if the temperature is too low, organic matters in the nano silver soldering paste can be incompletely volatilized, so that the connecting layer is not dense, the nano silver soldering paste can be sintered under the non-pressure condition in the formic acid/nitrogen atmosphere, the connecting strength of more than 25Mpa can be obtained, meanwhile, the tool during sintering can be simple, and the connection compactness is still insufficient compared with the pressurization sintering.
the following detailed description of embodiments of the invention refers to the accompanying drawings.
The manufacturing method of the double-sided heat dissipation silicon-based IGBT bidirectional switch module based on the low-temperature sintering nano-silver solder paste interconnection technology specifically comprises the following steps:
Step one, cleaning the DBC substrate. The lower DBC substrate shown in fig. 1 was pretreated by ultrasonic cleaning. Firstly, ultrasonically cleaning a DBC substrate by using absolute ethyl alcohol, removing pollutant particles possibly existing on the surface of the substrate by a physical oscillation method, and then drying the surface of the DBC substrate by using a nitrogen gun.
And step two, printing the nano-silver soldering paste. Firstly, a layer of 30-micron single-layer nano-silver soldering paste is printed on the semiconductor chips 3 and 4 and the to-be-connected area of the DBC substrate in a screen printing mode.
And step three, assembling the patch. Firstly, a buffer layer 5 is pasted on a soldering paste printing area of a semiconductor chip 3 and a semiconductor chip 4 by a chip mounter, then the semiconductor chip pasted with the buffer layer is pasted on the soldering paste printing area of a lower DBC substrate, the lower DBC substrate pasted with the chip is placed in a primary welding fixture, one end of a power terminal 2 is placed on a collector bus structure of the lower DBC, one end of a signal terminal 1 is placed on an electrode area of the lower DBC, the other end of the signal terminal is placed on the fixture, soldering paste is pre-printed between the lower DBC and the terminal, and assembly is completed.
Step four, welding for one time. And (3) placing the assembled module in a heating furnace for sintering, firstly heating the workpiece to be welded to 100 ℃, preheating for 10min, then applying 5MPa pressure to the solder paste in formic acid/nitrogen atmosphere, heating to 280 ℃, and preserving heat to finish sintering. The sintered connecting layer is compact, and the connecting strength can reach over 25 MPa.
and step five, wire bonding. One end of the coarse aluminum wire 7 is connected with the gate electrode of the silicon-based IGBT chip 3 through a lead bonding technology, and the other end of the coarse aluminum wire is connected with the electrode area of the DBC substrate. Since the emitter of the silicon-based IGBT chip 3 is connected to the upper DBC substrate through the buffer layer, the bonding height of the aluminum wire cannot exceed the height of the buffer layer, and the schematic diagram of the module after sintering and bonding is shown in fig. 3.
And step six, secondary welding. Firstly, cleaning an upper DBC substrate according to the first step, printing a soldering paste on the upper DBC substrate according to the second step, preheating the substrate in a heating device at 100 ℃ for 10min, assembling the substrate with a lower DBC, inverting the upper DBC, aligning the upper DBC with the lower DBC after primary welding through a clamp, and assembling the upper DBC and the lower DBC as shown in FIG. 4. And placing the assembled module in a heating furnace, applying a pressure of 5MPa to the solder paste for heating, and compacting a connecting layer after sintering, wherein the connecting strength can reach more than 25 MPa.
And step seven, plastic packaging. The epoxy resin plastic package glue is used for filling the inner gap of the module and forming a protective shell, and the module after plastic package is shown in figure 5.
Example 1: the bidirectional switch power module with double-sided heat dissipation capability based on the low-temperature sintering nano silver soldering paste packaging IGBT chip is subjected to insulation leakage test, static I-V characteristic and dynamic switch characteristic test, basically matched with the leakage curve of the same-level commercial module, and has the same good electrical performance.
Example 2: the thermal resistance test is carried out on the bidirectional switch power module with double-sided heat dissipation capability based on the IGBT chip packaged by the low-temperature sintering nano-silver solder paste, compared with the same-grade commercial module, the thermal resistance is reduced by 50%, the bidirectional switch power module with the double-sided heat dissipation capability based on the IGBT chip packaged by the low-temperature sintering nano-silver solder paste has better heat dissipation characteristic, and the junction temperature of the bidirectional switch power module with the double-sided heat dissipation capability based on the IGBT chip packaged by the low-temperature sintering nano-silver.
example 3: the high-low temperature impact aging and power cycle aging tests are carried out on the bidirectional switch power module with double-sided heat dissipation capability based on the low-temperature sintering nano silver solder paste packaging IGBT chip, the condition that the conduction voltage drop of a single channel of the module under rated current is 20% higher than that before the aging impact is defined as a failure standard, the module fails after the same-grade commercial module is aged by 500cycles, but the module fails when 800cycles are used, and the high-low temperature impact aging test module has excellent reliability.
Claims (6)
1. a bidirectional switch power device with double-sided heat dissipation capability is characterized by comprising two groups of IGBT chips and freewheeling diode chips, a power terminal, a signal terminal, a buffer layer, coarse aluminum wires, epoxy resin plastic sealant, a lower ceramic copper-clad substrate DBC with two collector bus structures and an upper ceramic copper-clad substrate DBC as a common emitter bus structure; two groups of IGBT chips and a freewheeling diode parallel branch group are connected with a lower ceramic copper-clad substrate DBC substrate by a nano-silver low-temperature sintering method, then a gate pole of a silicon-based IGBT is led out by lead bonding, and the silicon-based semiconductor chip is connected with another upper ceramic copper-clad substrate DBC substrate serving as a common emitter bus structure by a buffer layer, so that a circuit capable of conducting in two directions is realized; the power and signal terminals enable the module to conduct power and signal currents with the outside; one end of the power terminal is placed on a collector bus structure of the lower ceramic copper-clad substrate DBC, and the buffer layer can relieve the effect of module internal stress caused by the connection of an emitter of the IGBT chip and the upper DBC; the thick aluminum wire can lead the gate electrode of the IGBT chip out to an electrode area of the lower DBC, and the electrode area is connected with a signal terminal, so that the voltage of the gate electrode of the IGBT chip is controlled by the outside; and finally, the IGBT bidirectional switch module is prepared by epoxy resin plastic packaging and glue plastic packaging.
2. The bidirectional switch power device with double-sided heat dissipation capability of claim 1, wherein the IGBT chips are connected in parallel to the branch group, and each DBC substrate has a plurality of IGBT chips and freewheeling diode chips connected in reverse parallel; the number ratio of the IGBT chips to the freewheeling diode chips is 1: 1.
3. The bi-directional switching power device with double-sided heat dissipation capability as claimed in claim 1, wherein the double-sided heat dissipation structure has a silicon-based IGBT chip having a collector connected to the lower DBC substrate via a sintered nano silver paste, a silicon-based IGBT chip having an emitter connected to the upper DBC substrate via a buffer layer, and a chip connected to the buffer layer and the upper DBC substrate, so that heat generated inside the module is dissipated from both directions of the chip collector and the emitter; the collector bus structure is a structure insulated from other parts of the DBC substrate on the lower DBC substrate, and the cathode of the diode chip is electrically connected with the collector of the corresponding IGBT chip; the emitter bus structure is a structure for realizing connection of all IGBT emitters and all diode anodes on the upper DBC substrate, and the common emitter connection is realized by the bidirectional switch through the structure.
4. A method for manufacturing a bidirectional switch power with double-sided heat dissipation capacity is characterized by comprising the following steps:
Firstly, printing a layer of 30-40 mu m single-layer nano-silver soldering paste on a region to be connected of an emitter of the silicon-based IGBT by a screen printing mode, and attaching a buffer layer to the region printed with the soldering paste;
secondly, printing a layer of 30-40 mu m single-layer nano-silver soldering paste on the to-be-connected area of the ceramic copper-clad DBC substrate in a screen printing mode, and pasting the chip with the buffer layer on the area printed with the soldering paste;
thirdly, heating the printed soldering paste to 90-120 ℃, preserving heat for 5-15 minutes and preheating, wherein the purpose of preheating is to ensure the wettability of the soldering paste and simultaneously enable the soldering paste to become relatively dry, so that the soldering paste is convenient to be connected with a chip or a substrate and then hot-pressed;
fourthly, placing the DBC pasted with the chip in formic acid/nitrogen atmosphere, applying pressure of 5-10MPa, heating to 270-290 ℃, and preserving heat to complete sintering.
5. The method for manufacturing bidirectional switch power with double-sided heat dissipation capability as claimed in claim 4, wherein the sintering of the nano-silver solder paste can also be pressureless sintering in formic acid/nitrogen atmosphere.
6. the method for manufacturing the bidirectional switch power with double-sided heat dissipation capability according to claim 4, further comprising the following specific steps:
Cleaning a lower DBC substrate, and carrying out ultrasonic cleaning pretreatment on the lower DBC substrate: firstly, ultrasonically cleaning a DBC substrate by using absolute ethyl alcohol, removing pollutant particles possibly existing on the surface of the substrate by a physical oscillation method, and then drying the surface of the DBC substrate by using a nitrogen gun;
printing nano-silver soldering paste, namely printing a layer of 30-micrometer single-layer nano-silver soldering paste on the to-be-connected area of the semiconductor chip and the DBC substrate in a screen printing mode;
Step three, patch assembly: firstly, a chip mounter is used for pasting a buffer layer on a soldering paste printing area of a semiconductor chip, then the semiconductor chip pasted with the buffer layer is pasted on the soldering paste printing area of a lower DBC substrate, the lower DBC substrate pasted with the chip is placed in a primary welding fixture, and a power terminal and a signal terminal are assembled;
Step four, welding for one time; placing the assembled module in a heating furnace for sintering, firstly heating a workpiece to be welded to 100 ℃, preheating for 10min, then applying 5MPa pressure to the solder paste in a formic acid/nitrogen atmosphere, heating to 280 ℃, and preserving heat to complete sintering;
And step five, wire bonding, wherein one end of the coarse aluminum wire is connected with the gate electrode of the silicon-based IGBT chip, the other end of the coarse aluminum wire is connected with the electrode area of the DBC substrate, and the electrode area is connected with a signal terminal, so that the control of the gate electrode voltage of the IGBT chip is realized. The emitter of the silicon-based IGBT chip is connected with the upper DBC substrate through the buffer layer, so that the bonding height of the aluminum wire cannot exceed the height of the buffer layer;
step six, secondary welding: firstly, cleaning an upper DBC substrate according to the first step, printing soldering paste on the upper DBC substrate according to the second step, preheating the upper DBC substrate in a heating device at 100 ℃ for 10min, then assembling the upper DBC substrate with a lower DBC substrate, placing the assembled module in a heating furnace, applying pressure of 5MPa to the soldering paste for heating, and ensuring that a connection layer after sintering is compact and the connection strength can reach more than 25 MPa;
And step seven, plastic packaging, namely filling the gaps in the module with epoxy resin plastic packaging glue, and forming a protective shell and a protective module.
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