CN203218313U - Light emitting diode used in fluorescent lamps - Google Patents
Light emitting diode used in fluorescent lamps Download PDFInfo
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- CN203218313U CN203218313U CN 201320143734 CN201320143734U CN203218313U CN 203218313 U CN203218313 U CN 203218313U CN 201320143734 CN201320143734 CN 201320143734 CN 201320143734 U CN201320143734 U CN 201320143734U CN 203218313 U CN203218313 U CN 203218313U
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- emitting diode
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Abstract
The utility model discloses a light emitting diode used in fluorescent lamps. In the light emitting diode used in fluorescent lamps warps, the lateral margins of an N electrode are wrapped with a silicon dioxide protection layer by a method of generating the silicon dioxide protection layer by PECVD (plasma enhanced chemical vapor deposition) and optimizing a light cover. The lateral margins of the N electrode are wrapped with the silicon dioxide protection layer, so that electromigration between chromium of an epitaxial layer and the N electrode can be prevented in case of instant high voltage surge of municipal electricity or a power supply and undesirable phenomenon of dead lamp caused by epitaxial layer burnout due to gradual separation of the N electrode from the epitaxial layer can be effectively prevented. It is proved by experiments that the anomaly rate is decreased by 50%.
Description
Technical field
The present invention relates to a kind of light-emitting diode, more specifically, relate to a kind of light-emitting diode that is applied on the fluorescent tube.
Background technology
Light-emitting diode (English is Light Emitting Diode, be called for short LED) is a kind of of semiconductor diode, and it can be converted into luminous energy with electric energy, sends versicolor visible light and infrared and ultraviolet invisible lights such as Huang, green, indigo plant.Compare with small filament lamp bubble and neon lamp, it has operating voltage and electric current is low, reliability is high, the life-span is long and advantage such as conveniently adjusted luminosity.These advantages make the application of LED future on fluorescent tube will replace the conventional fluorescent fluorescent tube gradually.
At present; gallium nitride base light emitting two look utmost point pipes are generally chromium; platinum; gold three composition of layer; silicon dioxide layer of protection and N electrode light mask image do not have overlapping; cause silicon dioxide layer of protection the N electrode edge can't be wrapped up fully; when causing this type of light-emitting diode to be applied on the fluorescent tube; because the unsteadiness of civil power or power supply unit; the high voltage surging that occurs moment once in a while; the chromium component generation ELECTROMIGRATION PHENOMENON that causes the N electrode to contact with epitaxial loayer; reduce the contact area of N electrode and epitaxial loayer gradually, and current density is increased, a large amount of heating burnout epitaxial loayers; the N electrode breaks away from epitaxial loayer, causes fluorescent tube that phenomenons such as dead lamp is bad take place easily.
Summary of the invention
Purpose of the present invention namely is to improve the above-mentioned limitation of prior art, and a kind of light-emitting diode that is applied on the fluorescent tube is provided.
The technical solution adopted for the present invention to solve the technical problems is: a kind of light-emitting diode that is applied on the fluorescent tube; comprise luminous epitaxial loayer; it comprises first semiconductor layer, second semiconductor layer and is clipped in luminescent layer between two-layer; it is characterized in that: also comprise the N electrode structure; it is made of silicon dioxide layer of protection and N electrode, and described silicon dioxide layer of protection wraps up described N electrode edge.
In the present invention, described luminous epitaxial loayer is gallium nitride-based semiconductor, and the wavelength of the light wave of its emission is less than 500nm, and the thickness of described silicon dioxide layer of protection is 1000 ~ 5000 dusts.
The present invention uses the PECVD(plasma reinforced chemical vapour deposition) growth silicon dioxide layer of protection and the mode of optimizing light shield wrap up N electrode edge; light-emitting diode is applied on the fluorescent tube like this; when civil power or power supply unit have the situation of instant high-voltage surging; owing to there is silicon dioxide layer of protection that N electrode edge is wrapped up fully; ELECTROMIGRATION PHENOMENON can't take place in the chromium component that the N electrode is contacted with epitaxial loayer, and improving epitaxial loayer, burn the dead lamp that causes because the N electrode breaks away from gradually bad unusual.Through experimental verification, can reduce about 50% fraction defective.
Description of drawings
Accompanying drawing is used to provide further understanding of the present invention, and constitutes the part of specification, is used from explanation the present invention with embodiments of the invention one, is not construed as limiting the invention.In addition, the accompanying drawing data are to describe summary, are not to draw in proportion.
A kind of traditional light-emitting diode schematic diagram of Fig. 1.
Fig. 2 a kind of light-emitting diode schematic diagram that is applied on the fluorescent tube of the invention process.
Parts symbol description among the figure:
100: traditional light-emitting diode; 110,210: luminous epitaxial loayer; 120,220:N electrode chromium layer; 130,230:N electrode platinum layer; 140,240:N electrode gold layer; 150,250: silicon dioxide layer of protection; 200: the light-emitting diode of silicon dioxide layer of protection parcel N electrode edge.
Embodiment
Describe embodiments of the present invention in detail below with reference to drawings and Examples, how the application technology means solve technical problem to the present invention whereby, and the implementation procedure of reaching technique effect can fully understand and implements according to this.
As shown in Figure 2, a kind of light-emitting diode 200 that is applied on the fluorescent tube comprises luminous epitaxial loayer 210, N electrode chromium layer 220, platinum layer 230, gold layer 240, silicon dioxide layer of protection 250.Luminous epitaxial loayer 210 can be deposited on growth substrates (accompanying drawing does not illustrate) by epitaxial growth (as MOCVD) and go up or be bonded on the radiating substrate by Flip Chip.Above-mentioned light-emitting diode 200 is the blue light series LED, and luminous epitaxial film materials is gan-based compound, generally comprises n-GaN layer, mqw light emitting layer, p-GaN layer.Electrode generally can be formed on the luminous epitaxial loayer 210, is used for being communicated with external power source, excites p-n luminous.Silicon dioxide layer of protection 250 wraps up the N electrode edge, and its thickness can be 1000 ~ 5000 dusts.The mode that adopts the silicon dioxide layer of protection light shield to optimize; silicon dioxide layer of protection is wrapped up N electrode edge fully; ELECTROMIGRATION PHENOMENON can't take place in the chromium component that the N electrode is contacted with epitaxial loayer, improves epitaxial loayer and burns anomalies such as the dead lamp that causes is bad because the N electrode breaks away from gradually.
Clearly, explanation of the present invention should not be construed as and is limited only within above-described embodiment, but comprises the whole execution modes that utilize the present invention to conceive.
Claims (5)
1. light-emitting diode that is applied on the fluorescent tube; comprise luminous epitaxial loayer; it comprises first semiconductor layer, second semiconductor layer and is clipped in luminescent layer between two-layer; it is characterized in that: also comprise the N electrode structure; it is made of silicon dioxide layer of protection and N electrode, and described silicon dioxide layer of protection wraps up described N electrode edge.
2. a kind of light-emitting diode that is applied on the fluorescent tube according to claim 1, it is characterized in that: described luminous epitaxial loayer is gallium nitride-based semiconductor.
3. a kind of light-emitting diode that is applied on the fluorescent tube according to claim 1, it is characterized in that: the wavelength of the light that described lumination of light emitting diode is launched is less than 500nm.
4. a kind of light-emitting diode that is applied on the fluorescent tube according to claim 1, it is characterized in that: described light-emitting diode is the blue light series LED.
5. a kind of light-emitting diode that is applied on the fluorescent tube according to claim 1, it is characterized in that: the thickness of described silicon dioxide layer of protection is 1000 ~ 5000 dusts.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320143734 CN203218313U (en) | 2013-03-27 | 2013-03-27 | Light emitting diode used in fluorescent lamps |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320143734 CN203218313U (en) | 2013-03-27 | 2013-03-27 | Light emitting diode used in fluorescent lamps |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203218313U true CN203218313U (en) | 2013-09-25 |
Family
ID=49207823
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320143734 Expired - Lifetime CN203218313U (en) | 2013-03-27 | 2013-03-27 | Light emitting diode used in fluorescent lamps |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203218313U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108400215A (en) * | 2018-01-25 | 2018-08-14 | 华灿光电(苏州）有限公司 | A kind of light-emitting diode chip for backlight unit and preparation method thereof |
-
2013
- 2013-03-27 CN CN 201320143734 patent/CN203218313U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108400215A (en) * | 2018-01-25 | 2018-08-14 | 华灿光电(苏州）有限公司 | A kind of light-emitting diode chip for backlight unit and preparation method thereof |
| CN108400215B (en) * | 2018-01-25 | 2019-08-23 | 华灿光电(苏州）有限公司 | A kind of light-emitting diode chip for backlight unit and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130925 |
|
| CX01 | Expiry of patent term |