CN203165950U - Light Emitting Diode (LED) - Google Patents
Light Emitting Diode (LED) Download PDFInfo
- Publication number
- CN203165950U CN203165950U CN 201320125755 CN201320125755U CN203165950U CN 203165950 U CN203165950 U CN 203165950U CN 201320125755 CN201320125755 CN 201320125755 CN 201320125755 U CN201320125755 U CN 201320125755U CN 203165950 U CN203165950 U CN 203165950U
- Authority
- CN
- China
- Prior art keywords
- nano
- wire
- light
- emitting diode
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Led Device Packages (AREA)
Abstract
The utility model discloses an LED and a preparation method thereof. The LED structurally comprises a pedestal, an LED chip and a luminescent layer on the LED chip, wherein a coating of metal nanometer material is arranged on the upper surface of the luminescent layer. Specific surface area of metal nanometer structure is relatively large, so that the LED has excellent heat conductive performance; and the metal nanometer material coats the upper surface of the luminescent layer, so that heat generated by the LED chip can be effectively conducted, high temperature aging of the LED chip is prevented, and service life of the LED is prolonged.
Description
Technical field
The utility model relates to a kind of light-emitting diode.
Background technology
Light-emitting diode (Light Emitting Diode) is the luminescent device that sends ultraviolet, visible or infrared light when applying forward voltage at semiconductor p-n junction two ends, is the solid luminescence light source of a new generation.Because it has characteristics such as volume is little, the life-span is long, driving voltage is low, reaction speed is fast, shatter-proof, heat-resisting, since first light-emitting diode in 1964 comes out, people never stop the step of researching and developing, along with the exploitation of luminescent material and the improvement of semiconductor fabrication process, and structure, optical microcavity and the quantum well structure etc. of having introduced the distributed Bragg emission in the chip growth course, the light-emitting diodes tube efficiency that semiconductor lighting is used was being improved constantly in recent years.
Along with the fast development of light-emitting diode industry, the range of application of efficient LED correspondingly also proposes higher requirement to its performance day by day in progressively extension, comprises brightness, color developing, photochromic consistency etc.The direction of improving light-emitting diode performance need primary study comprises coating fluorescent material technology, and fluorescent material disperses inhomogeneous problem in colloid, the problem of the problem of fluorescent material precipitation and the heat radiation of light-emitting diode chip for backlight unit.Particularly how to solve the heat dissipation problem of chip, will play material impact to performance index such as the photoelectric characteristic of light-emitting diode and useful lifes, have very important realistic meaning for the sustainable development of whole light-emitting diode industry.In general, whether light-emitting diode work is stable, the quality quality, and most important with light-emitting diode heat radiation itself, natural heat dissipation is usually adopted in the heat radiation of high brightness LED lamp in the market, and effect is unsatisfactory.The reason of light-emitting diode heating is because the electric energy that adds all is not converted into luminous energy, but a part transforms into heat energy.Have a lot of methods to solve the heat radiation of light-emitting diode at present, for example adopt the better saphire substrate material of heat radiation, but sapphire will use elargol solid brilliant, and the heat conduction of elargol is also very poor.Perhaps select silicon carbide substrates for use, and that the unique shortcoming of carborundum is cost is too high.Also have the method by coated with thermally conductive glue, can produce worse effect on the contrary but the coating of heat-conducting glue is inhomogeneous.In addition technology such as heat pipe technology, cross-ventilation also are the selections that solves the LED heat radiating problem, but because problems such as cost make these technology not obtain application in a big way.
The bigger specific area that metal nano material has makes it have good thermal property; Simultaneously, metal nano material has very high light transmission rate, can reach more than 80%.Therefore, metal nano material being applied to the LED heat radiating technology, is a good solution.
The utility model content
The technical problems to be solved in the utility model provides a kind of light-emitting diode, effectively conducts the heat that light-emitting diode chip for backlight unit produces, and prevents the light-emitting diode chip for backlight unit high temperature ageing, prolongs the useful life of light-emitting diode.
In order to solve the problems of the technologies described above, a kind of light-emitting diode of the present utility model, comprise base, light-emitting diode chip for backlight unit is installed on the base, has luminescent layer on the light-emitting diode chip for backlight unit, described luminescent layer upper surface is provided with the metal nano material coating layer, also is provided with the outer package glue with light-emitting diode chip for backlight unit, luminescent layer and metal nano material coating layer parcel on the base.
As improvement of the technical scheme, described metal nano material coating layer is one or more the combination in metal nanometer line, metal alloy nanowires, metal hetero-junction nano wire, the metal nanoparticle.
As improvement of the technical scheme, described light-emitting diode chip for backlight unit is the chip of blue light-emitting or ultraviolet light.
The beneficial effects of the utility model are: this light-emitting diode adopts the metal nano material coating layer to coat the luminescent layer upper surface of light-emitting diode, the excellent heat conductivity that metal nano material has makes it to conduct the heat that light-emitting diode chip for backlight unit produces effectively, weaken the optical attenuation of light-emitting diode, improve the service life of device, have huge meaning for the preparation of high-performance light-emitting diode.
Description of drawings
Below in conjunction with the drawings and specific embodiments the utility model is described in further detail.
Fig. 1 is structural representation of the present utility model.
Embodiment
With reference to Fig. 1, a kind of light-emitting diode of the present utility model, comprise base 1, light-emitting diode chip for backlight unit 2 is installed on the base 1, has luminescent layer 3 on the light-emitting diode chip for backlight unit 2, described luminescent layer 3 upper surfaces are provided with metal nano material coating layer 4, also are provided with the outer package glue 5 with light-emitting diode chip for backlight unit 2, luminescent layer 3 and metal nano material coating layer 4 parcels on the base 1.This light-emitting diode adopts the metal nano material coating layer to coat the luminescent layer upper surface of light-emitting diode, the excellent heat conductivity that metal nano material has makes it to conduct the heat that light-emitting diode chip for backlight unit produces effectively, weaken the optical attenuation of light-emitting diode, improve the service life of device, have huge meaning for the preparation of high-performance light-emitting diode.
Base 1 is the support of light-emitting diode in the utility model, and it requires to have good chemical stability and thermal stability, good electrical conductivity and thermal conductivity.
Described metal nano material coating layer 4 is one or more the combination in metal nanometer line, metal alloy nanowires, metal hetero-junction nano wire, the metal nanoparticle.
Described metal nanometer line comprises: Fe nanowire, copper nano-wire, nano silver wire, nanowires of gold, aluminium nano wire, nickel nano wire, cobalt nanowire, manganese nano wire, cadmium nano wire, indium nano wire, stannum nanowire, tungsten nano wire and platinum nano wire.
Described metal alloy nanowires comprises: the copper-iron alloy nano wire, silver ferroalloy nano wire, the bule gold nano wire, the alfer nano wire, the dilval nano wire, the ferro-cobalt nano wire, the manganeisen nano wire, cadmium ferroalloy nano wire, indium ferroalloy nano wire, tin ferroalloy nano wire, the ferro-tungsten nano wire, the pt-fe alloy nano wire, the yellow gold nano wire, the gold copper nano wire, the aluminium copper nano wire, the monel nano wire, the cobalt-copper alloy nano wire, the manganin nano wire, the cadmium copper alloy nano wire, the gun-metal nano wire, the tungsten-copper alloy nano wire, the Mock gold nano wire, the electrum nano wire, the aluminium silver alloy nanowires, the bazar metal nano wire, the cobalt silver alloy nanowires, the manganese silver alloy nanowires, the cadmium silver nano wire, the indium silver alloy nanowires, the sn-ag alloy nano wire, the tungsten silver alloy nanowires, the platinum-silver alloys nano wire, the aluminium gold alloy nano-wire, nickel billon nano wire, cobalt billon nano wire, manganese billon nano wire, cadmium billon nano wire, indium billon nano wire, Sillim's alloy nano-wire, tungsten billon nano wire, the cobalt-nickel alloy nano wire, the manganese-nickel nano wire, the cadmium-nickel alloy nano wire, indium nickel alloy nano wire, the tin-nickel alloy nano wire, the tungsten nickel nano wire, the platinum-nickel alloy nano wire, cadmium manganese alloy nano wire, indium manganese alloy nano wire, tin manganese alloy nano wire, tungsten manganese alloy nano wire, platinum manganese alloy nano wire, indium cadmium alloy nano wire, tin cadmium alloy nano wire, tungsten cadmium alloy nano wire, platinum cadmium alloy nano wire, the tin-indium alloy nano wire, tungsten indium alloy nano wire, platinum indium alloy nano wire, tungsten ashbury metal nano wire, platinum ashbury metal nano wire, the platinum-tungsten alloys nano wire.
Described metal hetero-junction nano wire comprises: copper iron heterojunction nano-wire, silver iron heterojunction nano-wire, gold iron heterojunction nano-wire, the ferro-aluminum heterojunction nano-wire, the ferronickel heterojunction nano-wire, the ferro-cobalt heterojunction nano-wire, the ferromanganese heterojunction nano-wire, cadmium iron heterojunction nano-wire, indium iron heterojunction nano-wire, tin iron heterojunction nano-wire, the ferrotungsten heterojunction nano-wire, platinum iron heterojunction nano-wire, the silver-bearing copper heterojunction nano-wire, gold copper heterojunction nano-wire, the aluminum copper dissimilar junction nanowire, the ambrose alloy heterojunction nano-wire, cobalt copper heterojunction nano-wire, the copper-manganese heterojunction nano-wire, the cadmium copper heterojunction nano-wire, tin copper heterojunction nano-wire, the tungsten copper heterojunction nano-wire, the platinoid heterojunction nano-wire, the gold and silver heterojunction nano-wire, aluminium silver heterojunction nano-wire, the nickeline heterojunction nano-wire, cobalt silver heterojunction nano-wire, manganese silver heterojunction nano-wire, cadmium silver heterojunction nano-wire, indium silver heterojunction nano-wire, tin silver heterojunction nano-wire, tungsten silver heterojunction nano-wire, platinum silver heterojunction nano-wire, the aluminium gold heterojunction nano-wire, nickel gold heterojunction nano-wire, cobalt gold heterojunction nano-wire, manganese gold heterojunction nano-wire, cadmium gold heterojunction nano-wire, indium gold heterojunction nano-wire, Sillim's heterojunction nano-wire, tungsten gold heterojunction nano-wire, cobalt nickel heterojunction nano-wire, manganese nickel heterojunction nano-wire, cadmium nickel heterojunction nano-wire, indium nickel heterojunction nano-wire, tin nickel heterojunction nano-wire, tungsten nickel heterojunction nano-wire, platinum nickel heterojunction nano-wire, cadmium manganese heterojunction nano-wire, indium manganese heterojunction nano-wire, tin manganese heterojunction nano-wire, tungsten manganese heterojunction nano-wire, platinum manganese heterojunction nano-wire, indium cadmium heterojunction nano-wire, tin cadmium heterojunction nano-wire, tungsten cadmium heterojunction nano-wire, platinum cadmium heterojunction nano-wire, tin indium heterojunction nano-wire, tungsten indium heterojunction nano-wire, platinum indium heterojunction nano-wire, tungsten tin heterojunction nano-wire, platinum tin heterojunction nano-wire, platinum tungsten heterojunction nano-wire.
Described metal nanoparticle comprises: iron nano-particle, copper nano particles, silver nano-grain, gold nano grain, aluminium nano particle, nano nickel particles, cobalt nano-particle, manganese nano particle, cadmium nano particle, indium nanometer particle, sijna rice particle, tungsten nano particle and Pt nanoparticle.
Described light-emitting diode chip for backlight unit 2 is the chip of blue light-emitting or ultraviolet light, as the excitated fluorescent powder luminous light source, has preferably luminous power and emission wavelength and fluorescent material that good coupling is arranged.
A kind of manufacturing method for LED may further comprise the steps:
1. select the light-emitting diode chip for backlight unit 2 with the fluorescent material coupling, the effective excitated fluorescent powder of the luminous energy that light-emitting diode chip for backlight unit 2 is sent;
2. adopt crystal-bonding adhesive that light-emitting diode chip for backlight unit 2 is bonded on the base 1;
3. extraction electrode on light-emitting diode chip for backlight unit 2;
4. apply fluorescent material at light-emitting diode chip for backlight unit 2 and form luminescent layer 3;
5. metal nano material coating layer 4 is prepared in the upper surface of the luminescent layer 3 that 4. step obtain;
6. adopt outer package glue 5 to encapsulate the light-emitting diode for preparing;
7. every photoelectric properties and the parameter of last test light-emitting diode.
Wherein, step 4. described fluorescent material be by a kind of blue light or ultraviolet excitation and luminous fluorescent material.
Embodiment 1
Light emitting diode construction as shown in Figure 1, light-emitting diode chip for backlight unit 2 adopts blue LED chip, luminescent layer 3 adopts the fluorescent material that is subjected to blue-light excited generation gold-tinted, and metal nano material coating layer 4 adopts nanowires of gold, and the thickness of described nanowires of gold coating layer is 40nm.
The preparation method is as follows:
1. select suitable crystal-bonding adhesive that light-emitting diode chip for backlight unit is bonded on the base;
2. extraction electrode on light-emitting diode chip for backlight unit;
3. apply fluorescent material at light-emitting diode chip for backlight unit;
4. the nanowires of gold coating layer is prepared on the luminescent layer upper surface that 3. step obtains;
5. the above-mentioned light-emitting diode for preparing is encapsulated;
6. every photoelectric properties and the parameter of test component.
Light emitting diode construction as shown in Figure 1, light-emitting diode chip for backlight unit 2 adopts blue LED chip, luminescent layer 3 adopts the fluorescent material that is subjected to blue-light excited generation green glow, and metal nano material coating layer 4 adopts copper nano-wire, and the thickness of described copper nano-wire coating layer is 50nm.
Preparation flow is similar to embodiment 1.
Embodiment 3
Light emitting diode construction as shown in Figure 1, light-emitting diode chip for backlight unit 2 adopts blue LED chip, luminescent layer 3 adopts the fluorescent material that is subjected to blue-light excited generation ruddiness, and metal nano material coating layer 4 adopts the nickel nano wire, and the thickness of described nickel nano wire coating layer is 60nm.
Preparation flow is similar to embodiment 1.
Light emitting diode construction as shown in Figure 1, light-emitting diode chip for backlight unit 2 adopts blue LED chip, luminescent layer 3 adopts the fluorescent material that is subjected to blue-light excited generation ruddiness and green glow, and metal nano material coating layer 4 adopts nano silver wire, and the thickness of described nano silver wire coating layer is 70nm.
Preparation flow is similar to embodiment 1.
Table 1 is the light-emitting diode of the conventional luminescent layer of employing and the various performance parameters of the light-emitting diode among the embodiment 4.
Light emitting diode construction as shown in Figure 1, light-emitting diode chip for backlight unit 2 adopts the ultraviolet light-emitting diodes chip, luminescent layer 3 adopts the fluorescent material that is subjected to ultraviolet excitation to produce blue light, metal nano material coating layer 4 adopts the yellow gold nano wire, and the thickness of described yellow gold nano wire coating layer is 80nm.
Preparation flow is similar to embodiment 1.
Embodiment 6
Light emitting diode construction as shown in Figure 1, light-emitting diode chip for backlight unit 2 adopts the ultraviolet light-emitting diodes chip, luminescent layer 3 adopts the fluorescent material that is subjected to ultraviolet excitation to produce green glow, metal nano material coating layer 4 adopts the dilval nano wire, and the thickness of described dilval nano wire coating layer is 90nm.
Preparation flow is similar to embodiment 1.
Embodiment 7
Light emitting diode construction as shown in Figure 1, light-emitting diode chip for backlight unit 2 adopts the ultraviolet light-emitting diodes chip, luminescent layer 3 adopts the fluorescent material that is subjected to ultraviolet excitation to produce gold-tinted, metal nano material coating layer 4 adopts golden copper heterojunction nano-wire, and the thickness of described golden copper heterojunction nano-wire coating layer is 100nm.
Preparation flow is similar to embodiment 1.
Embodiment 8
Light emitting diode construction as shown in Figure 1, light-emitting diode chip for backlight unit 2 adopts the ultraviolet light-emitting diodes chip, luminescent layer 3 adopts the fluorescent material that is subjected to ultraviolet excitation to produce ruddiness, metal nano material coating layer 4 adopts platinum silver heterojunction nano-wire, and the thickness of described platinum silver heterojunction nano-wire coating layer is 110nm.
Preparation flow is similar to embodiment 1.
Embodiment 9
Light emitting diode construction as shown in Figure 1, light-emitting diode chip for backlight unit 2 adopts the ultraviolet light-emitting diodes chip, luminescent layer 3 adopts the fluorescent material that is subjected to ultraviolet excitation to produce blue light and gold-tinted, metal nano material coating layer 4 adopts silver nano-grain, and the thickness of described silver nano-grain coating layer is 40nm.
Preparation flow is similar to embodiment 1.
Embodiment 10
Light emitting diode construction as shown in Figure 1, light-emitting diode chip for backlight unit 2 adopts the ultraviolet light-emitting diodes chip, luminescent layer 3 adopts the fluorescent material that is subjected to ultraviolet excitation to produce blue light, green glow and ruddiness, metal nano material coating layer 4 adopts gold nano grain, and the thickness of described gold nano grain coating layer is 50nm.
Preparation flow is similar to embodiment 1.
Embodiment 11
Light emitting diode construction as shown in Figure 1, light-emitting diode chip for backlight unit 2 adopts the ultraviolet light-emitting diodes chip, luminescent layer 3 adopts the fluorescent material that is subjected to ultraviolet excitation to produce blue light, green glow and ruddiness, metal nano material coating layer 4 adopts the mixture of nano silver wire and copper nano particles, and the thickness of the mixture coating layer of described nano silver wire and copper nano particles is 60nm.
Preparation flow is similar to embodiment 1.
Embodiment 12
Light emitting diode construction as shown in Figure 1, light-emitting diode chip for backlight unit 2 adopts the ultraviolet light-emitting diodes chip, luminescent layer 3 adopts the fluorescent material that is subjected to ultraviolet excitation to produce blue light, green glow and ruddiness, metal nano material coating layer 4 adopts the mixture of electrum nano wire and nano nickel particles, and the thickness of the mixture coating layer of described electrum nano wire and nano nickel particles is 70nm.
Preparation flow is similar to embodiment 1.
Embodiment 13
Light emitting diode construction as shown in Figure 1, light-emitting diode chip for backlight unit 2 adopts the ultraviolet light-emitting diodes chip, luminescent layer 3 adopts the fluorescent material that is subjected to ultraviolet excitation to produce blue light, green glow and ruddiness, metal nano material coating layer 4 adopts the mixture of tin-nickel alloy nano wire and cobalt nano-particle, and the thickness of the mixture coating layer of described tin-nickel alloy nano wire and cobalt nano-particle is 80nm.
Preparation flow is similar to embodiment 1.
Embodiment 14
Light emitting diode construction as shown in Figure 1, light-emitting diode chip for backlight unit 2 adopts the ultraviolet light-emitting diodes chip, luminescent layer 3 adopts the fluorescent material that is subjected to ultraviolet excitation to produce blue light, green glow and ruddiness, metal nano material coating layer 4 adopts the mixture of golden copper heterojunction nano-wire and iron nano-particle, and the thickness of the mixture coating layer of described golden copper heterojunction nano-wire and iron nano-particle is 90nm.
Preparation flow is similar to embodiment 1.
Embodiment 15
Light emitting diode construction as shown in Figure 1, light-emitting diode chip for backlight unit 2 adopts the ultraviolet light-emitting diodes chip, luminescent layer 3 adopts the fluorescent material that is subjected to ultraviolet excitation to produce blue light, green glow and ruddiness, metal nano material coating layer 4 adopts the mixture of cadmium nickel heterojunction nano-wire and silver nano-grain, and the thickness of the mixture coating layer of described cadmium nickel heterojunction nano-wire and silver nano-grain is 100nm.
Preparation flow is similar to embodiment 1.
Embodiment 16
Light emitting diode construction as shown in Figure 1, light-emitting diode chip for backlight unit 2 adopts the ultraviolet light-emitting diodes chip, luminescent layer 3 adopts the fluorescent material that is subjected to ultraviolet excitation to produce blue light, green glow and ruddiness, metal nano material coating layer 4 adopts the mixture of cobalt nanowire and gun-metal nano wire, and the thickness of the mixture coating layer of described cobalt nanowire and gun-metal nano wire is 110nm.
Preparation flow is similar to embodiment 1.
The above only is preferential execution mode of the present utility model, as long as realize that with basic identical means the technical scheme of the utility model purpose all belongs within the protection range of the present utility model.
Claims (3)
1. light-emitting diode, comprise base (1), light-emitting diode chip for backlight unit (2) is installed on the base (1), has luminescent layer (3) on the light-emitting diode chip for backlight unit (2), it is characterized in that: described luminescent layer (3) upper surface is provided with metal nano material coating layer (4), also is provided with the outer package glue (5) with light-emitting diode chip for backlight unit (2), luminescent layer (3) and metal nano material coating layer (4) parcel on the base (1).
2. light-emitting diode according to claim 1 is characterized in that: described metal nano material coating layer (4) is one or more the combination in metal nanometer line, metal alloy nanowires, metal hetero-junction nano wire, the metal nanoparticle.
3. light-emitting diode according to claim 1 and 2 is characterized in that: described light-emitting diode chip for backlight unit (2) is the chip of blue light-emitting or ultraviolet light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320125755 CN203165950U (en) | 2013-03-15 | 2013-03-15 | Light Emitting Diode (LED) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320125755 CN203165950U (en) | 2013-03-15 | 2013-03-15 | Light Emitting Diode (LED) |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203165950U true CN203165950U (en) | 2013-08-28 |
Family
ID=49027113
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320125755 Expired - Fee Related CN203165950U (en) | 2013-03-15 | 2013-03-15 | Light Emitting Diode (LED) |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203165950U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103151448A (en) * | 2013-03-15 | 2013-06-12 | 中山达华智能科技股份有限公司 | Light emitting diode and manufacturing method thereof |
| CN108630708A (en) * | 2017-03-15 | 2018-10-09 | 京东方科技集团股份有限公司 | Electrically-conductive backing plate and preparation method thereof, display device |
-
2013
- 2013-03-15 CN CN 201320125755 patent/CN203165950U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103151448A (en) * | 2013-03-15 | 2013-06-12 | 中山达华智能科技股份有限公司 | Light emitting diode and manufacturing method thereof |
| CN108630708A (en) * | 2017-03-15 | 2018-10-09 | 京东方科技集团股份有限公司 | Electrically-conductive backing plate and preparation method thereof, display device |
| US11231606B2 (en) | 2017-03-15 | 2022-01-25 | Boe Technology Group Co., Ltd. | Conductive substrate, manufacturing method thereof and display device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105226167B (en) | A kind of luminous flexible LED filament of full angle and its manufacture method | |
| CN203910792U (en) | A single-end power supply omnidirectional LED lamp filament | |
| CN104465895B (en) | LED chip and preparation method thereof | |
| CN102034919A (en) | High-brightness high-power light-emitting diode (LED) and manufacturing method thereof | |
| CN104081548A (en) | Light emission device and illumination device | |
| CN105261695A (en) | Bonding structure for III-V compound device | |
| CN203165950U (en) | Light Emitting Diode (LED) | |
| CN103151445B (en) | Low thermal resistance LED (Light Emitting Diode) packaging structure and packaging method | |
| CN102569573B (en) | Improve heat conducting LED chip | |
| CN103151448A (en) | Light emitting diode and manufacturing method thereof | |
| CN101629707A (en) | LED lamp and encapsulating method thereof | |
| CN209766417U (en) | LED area light source light engine based on honeycomb arrangement | |
| CN102244175A (en) | Light emitting diode and manufacturing method thereof | |
| US20130075780A1 (en) | Radiation heat dissipation led structure and the manufacturing method thereof | |
| CN202253012U (en) | Light-emitting diode (LED) module and lighting equipment | |
| CN202564439U (en) | Semiconductor luminescent device | |
| CN109370227A (en) | A kind of heat-conducting silicone grease | |
| CN104810458B (en) | COB packaging process for integrating LED distance light and dipped light of automotive headlamp | |
| CN202473912U (en) | LED array light source without circuit substrate | |
| CN209418539U (en) | A kind of high-efficient large power LED light source encapsulating structure | |
| TWI287878B (en) | Light-emitting diodes and method of manufacturing same using metal bonding technique | |
| CN210197038U (en) | High-power color temperature change LED lamp bead | |
| CN103855291B (en) | Chip on board packaging structure and preparation method thereof | |
| CN203836687U (en) | Inverted LED integrated substrate | |
| CN103178186A (en) | Light-emitting diode package structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130828 Termination date: 20170315 |