CN203124337U - Wafer cleaning device - Google Patents
Wafer cleaning device Download PDFInfo
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- CN203124337U CN203124337U CN 201320095411 CN201320095411U CN203124337U CN 203124337 U CN203124337 U CN 203124337U CN 201320095411 CN201320095411 CN 201320095411 CN 201320095411 U CN201320095411 U CN 201320095411U CN 203124337 U CN203124337 U CN 203124337U
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- Prior art keywords
- deionized water
- cleaning device
- supply pipe
- nitrogen
- pipe
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Abstract
The utility model provides a wafer cleaning device which comprises a cleaning tank, a deionized water supply pipe and a water drain pipe which are connected with the cleaning tank and a nitrogen supply pipe used for supplying nitrogen to the deionized water supply pipe, wherein the nitrogen supply pipe is connected with the deionized water supply pipe. Wafers are placed in the cleaning tank with deionized water full of nitrogen bubbles, the purpose of removing wafer surface particles is achieved by aid of the washing and adsorbing effects of the nitrogen bubbles for the wafer surface particles, then sewage is drained through the water drain pipe, and therefore cleanliness of deionized water in the cleaning tank is ensured.
Description
Technical field
The utility model relates to field of semiconductor manufacture, relates in particular to a kind of wafer cleaning device.
Background technology
At present, in the manufacturing process of wafer, need clean wafer, in order to remove the particle (Particles) that has crystal column surface, improve the yield of wafer.
In the prior art, a kind of wafer cleaning device comprises as shown in Figure 1: rinse bath 10, the deionized water supply pipe 20 that is connected with described rinse bath 10 and the drainpipe 30 that is connected with described rinse bath 10.When cleaning, wafer is placed in the described rinse bath 10, and uses 20 pairs of described rinse baths 10 of described deionized water supply pipe to supply water, thereby the surface of wafer is washed, reach and remove the purpose that is adsorbed on the crystal column surface particle.
Yet, please refer to Fig. 2, the surface of wafer 41 can deposit and form multiple film, silica membrane for example, when using wet etching to remove silica membrane, have the surface that the part silica membrane remains in wafer 41, develop into the particle 42 that influences wafer 41 yields.Because the particle 42 of the residual formation of part silica membrane is to be deposited on wafer 41 surfaces, rather than conventional particle is adsorbed to wafer 41 surfaces, therefore, wafer cleaning device uses deionized water can't remove the particle 42 on wafer 41 surfaces easily in the prior art, can not guarantee that wafer 41 surfaces are cleaned totally.Therefore, how to clean the residual and particle 42 that forms of film, the yield that improves wafer 41 has just become those skilled in the art to need the technical problem of solution badly.
The utility model content
The purpose of this utility model is to provide a kind of wafer cleaning device, can remove the particle of crystal column surface, improves the yield of wafer.
To achieve these goals, the utility model proposes a kind of wafer cleaning device, comprising:
Rinse bath;
The deionized water supply pipe, described deionized water supply pipe is connected with described rinse bath;
Drainpipe, described drainpipe is connected with described rinse bath;
Comprise also that to the nitrogen supply (NS) pipe of described deionized water supply pipe the supply of nitrogen described nitrogen supply (NS) pipe is connected with described deionized water supply pipe.
Further, be provided with dividing plate in the described rinse bath, described dividing plate is divided into inside groove and water jacket with described rinse bath.
Further, described wafer cleaning device comprises two-way deionized water supply pipe.
Further, described two-way deionized water supply pipe all is connected with described water jacket.
Further, described nitrogen supply (NS) pipe is connected with described two-way deionized water supply pipe respectively.
Further, described drainpipe links to each other with described water jacket with described inside groove respectively.
Further, be provided with valve and flowmeter successively on the described nitrogen supply (NS) pipe.
Compared with prior art, the beneficial effects of the utility model are mainly reflected in: described nitrogen supply (NS) pipe links to each other with described deionized water supply pipe, and all link to each other with described rinse bath, wafer is placed in the rinse bath of the deionized water that is full of nitrogen bubble, by flushing and the suction-operated of nitrogen bubble to the crystal column surface particle, to reach the purpose of removing the crystal column surface particle, again by the drainpipe draining-off sewage, guarantee the cleanliness factor of the deionized water in the rinse bath.
Description of drawings
Fig. 1 is wafer cleaning device structural representation in the prior art;
Fig. 2 is the schematic diagram of crystal column surface residual particles in the prior art;
Fig. 3 is wafer cleaning device structural representation among the utility model embodiment one;
Fig. 4 is the schematic diagram of nitrogen bubble absorption crystal column surface particle among the utility model embodiment one;
Fig. 5 is wafer cleaning device structural representation among the utility model embodiment two.
The specific embodiment
Below in conjunction with the drawings and specific embodiments the wafer cleaning device that the utility model proposes is described in further detail.According to the following describes and claims, advantage of the present utility model and feature will be clearer.It should be noted that accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the purpose of aid illustration the utility model embodiment lucidly.
Embodiment one
Please refer to Fig. 3, in the present embodiment, propose a kind of wafer cleaning device, comprising: rinse bath 100, deionized water supply pipe 200, nitrogen supply (NS) pipe 400 and drainpipe 300.
Described deionized water supply pipe 200 is connected with described rinse bath 100.
Described drainpipe 300 is connected with described rinse bath 100, is used for getting rid of the sewage that cleans out, thereby guarantees the cleanliness factor of deionized water in the described rinse bath 100.
Described wafer cleaning device also comprises nitrogen supply (NS) pipe 400, and described nitrogen supply (NS) pipe 400 is connected with described deionized water supply pipe 200, for described deionized water supply pipe 200 provides nitrogen.Be provided with valve 410 and flowmeter 420 on the described nitrogen supply (NS) pipe 400 successively, the supply that described valve 410 can be controlled nitrogen whether, described flowmeter 420 can detect the supply of nitrogen, and in the present embodiment, described nitrogen supply (NS) pipe 400 provides 10 liters/minute nitrogen.
In the present embodiment, described deionized water supply pipe 200 is two-way altogether, all be connected with described rinse bath 100, for described rinse bath 100 provides deionized water, provide deionized water to described rinse bath 100 jointly by two-way deionized water supply pipe 200, the deionized water that contains nitrogen bubble is full of in the described rinse bath 100 fast, uniformly.
As shown in Figure 3 and Figure 4, when using described wafer cleaning device, earlier wafer 510 is positioned in the described rinse bath 100, and make described deionized water supply pipe 200 and described nitrogen supply (NS) pipe 400 constantly provide the deionized water that contains nitrogen to described rinse bath 100, by flushing and the suction-operated of 530 pairs of wafer 510 surface particles 520 of nitrogen bubble, to reach the purpose of removing wafer 510 surface particles 520.
Embodiment two
Please refer to Fig. 5, present embodiment and embodiment one difference part are, be provided with dividing plate 130 in the rinse bath 100 of described wafer cleaning device, described dividing plate 130 is divided into inside groove 120 and water jacket 110 with described rinse bath, when the liquid level of the deionized water of described inside groove 120 was higher than the height of dividing plate 130, deionized water can be spilled in the described inside groove 120 by described water jacket 110.
Wherein, described wafer cleaning device also comprises filter and circulation pipe (not shown), described filter is arranged in the described inside groove 120, be used for purifying the deionized water of described inside groove 120, described circulation pipe connects described water jacket 110 and inside groove 120, make deionized water after described filter filters be circulated to described water jacket 110 through described circulation pipe and re-use, thereby can save deionized water, reduce production costs.
Wherein, described drainpipe 300 all connects described inside groove 120 and water jacket 110, when the deionized water in described water jacket 110 and the described inside groove 120 all overflows soon or when finding that deionized water in described water jacket 110 and the described inside groove 120 become contaminated to the cleanliness factor that can't meet cleaning, open described drainpipe 300, get rid of contaminated deionized water in described water jacket 110 and the described inside groove 120 simultaneously, after treating that eliminating finishes, provide the deionized water that contains nitrogen by described deionized water supply pipe 200 and nitrogen supply (NS) pipe 400 to described water jacket 110 again.
In sum, in the wafer cleaning device that the utility model embodiment provides, provide the deionized water that contain nitrogen with described deionized water supply pipe 200 for described water jacket 110 by described nitrogen supply (NS) pipe 400, wafer is placed in the described water jacket 110, by flushing and the suction-operated of nitrogen bubble to wafer 510 surface particles 520, to reach the purpose of removing wafer 510 surface particles 520, get rid of contaminated deionized water by drainpipe 300 again, guarantee the cleanliness factor of the deionized water in the rinse bath.
Above-mentioned only is preferred embodiment of the present utility model, the utility model is not played any restriction.Any person of ordinary skill in the field; in the scope that does not break away from the technical solution of the utility model; technical scheme and technology contents that the utility model discloses are made any type of changes such as replacement or modification that are equal to; all belong to the content that does not break away from the technical solution of the utility model, still belong within the protection domain of the present utility model.
Claims (7)
1. wafer cleaning device comprises:
Rinse bath;
The deionized water supply pipe, described deionized water supply pipe is connected with described rinse bath;
Drainpipe, described drainpipe is connected with described rinse bath;
It is characterized in that also comprise to the nitrogen supply (NS) pipe of described deionized water supply pipe the supply of nitrogen, described nitrogen supply (NS) pipe is connected with described deionized water supply pipe.
2. wafer cleaning device as claimed in claim 1 is characterized in that, is provided with dividing plate in the described rinse bath, and described dividing plate is divided into inside groove and water jacket with described rinse bath.
3. wafer cleaning device as claimed in claim 2 is characterized in that, described wafer cleaning device comprises two-way deionized water supply pipe.
4. wafer cleaning device as claimed in claim 3 is characterized in that, described two-way deionized water supply pipe all is connected with described water jacket.
5. wafer cleaning device as claimed in claim 3 is characterized in that, described nitrogen supply (NS) pipe is connected with described two-way deionized water supply pipe respectively.
6. wafer cleaning device as claimed in claim 2 is characterized in that, described drainpipe links to each other with described water jacket with described inside groove respectively.
7. wafer cleaning device as claimed in claim 1 is characterized in that, is provided with valve and flowmeter successively on the described nitrogen supply (NS) pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320095411 CN203124337U (en) | 2013-03-01 | 2013-03-01 | Wafer cleaning device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320095411 CN203124337U (en) | 2013-03-01 | 2013-03-01 | Wafer cleaning device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203124337U true CN203124337U (en) | 2013-08-14 |
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ID=48932363
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320095411 Expired - Fee Related CN203124337U (en) | 2013-03-01 | 2013-03-01 | Wafer cleaning device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203124337U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109201608A (en) * | 2018-10-09 | 2019-01-15 | 无锡亚电智能装备有限公司 | A kind of wafer high-efficiency washing device and cleaning method |
| CN110544649A (en) * | 2018-05-29 | 2019-12-06 | 政汉电子科技有限公司 | batch-type wet etching cleaning device and batch-type wet etching cleaning method |
| TWI701754B (en) * | 2018-11-23 | 2020-08-11 | 南亞科技股份有限公司 | Wafer cleaning apparatus and method of cleaning wafer |
| CN114985364A (en) * | 2022-06-08 | 2022-09-02 | 武汉美琪林新材料有限公司 | Boron carbide purification device |
-
2013
- 2013-03-01 CN CN 201320095411 patent/CN203124337U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110544649A (en) * | 2018-05-29 | 2019-12-06 | 政汉电子科技有限公司 | batch-type wet etching cleaning device and batch-type wet etching cleaning method |
| CN109201608A (en) * | 2018-10-09 | 2019-01-15 | 无锡亚电智能装备有限公司 | A kind of wafer high-efficiency washing device and cleaning method |
| TWI701754B (en) * | 2018-11-23 | 2020-08-11 | 南亞科技股份有限公司 | Wafer cleaning apparatus and method of cleaning wafer |
| US11037805B2 (en) | 2018-11-23 | 2021-06-15 | Nanya Technology Corporation | Wafer cleaning apparatus and method of cleaning wafer |
| CN114985364A (en) * | 2022-06-08 | 2022-09-02 | 武汉美琪林新材料有限公司 | Boron carbide purification device |
| CN114985364B (en) * | 2022-06-08 | 2023-03-21 | 武汉美琪林新材料有限公司 | Boron carbide purification device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130814 Termination date: 20190301 |