CN109201608A - A kind of wafer high-efficiency washing device and cleaning method - Google Patents
A kind of wafer high-efficiency washing device and cleaning method Download PDFInfo
- Publication number
- CN109201608A CN109201608A CN201811170089.0A CN201811170089A CN109201608A CN 109201608 A CN109201608 A CN 109201608A CN 201811170089 A CN201811170089 A CN 201811170089A CN 109201608 A CN109201608 A CN 109201608A
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- China
- Prior art keywords
- wafer
- sink
- spray
- inlet pipe
- efficiency washing
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a kind of wafer high-efficiency washing devices, it includes sink, and wafer to be cleaned is placed in sink, it is stamped overhead guard above sink, spray device is provided in overhead guard, bottom of gullet two sides are provided with water inlet pipe, sink two sides are provided with overflow port, and the bottom of sink is provided with leakage fluid dram.The invention also discloses a kind of wafer high-efficiency washing methods, lead to nitrogen into sink by air inlet pipe, air is excluded using high pure nitrogen, reduce the probability that spray liquid summarizes doping oxygen, the chemicals of the adherency of crystal column surface is diluted and removed by the way of impregnating overflow cleaning, and spray and both spraying modes are separately carried out in different periods, and spray guarantees that each wafer can be cleaned uniformly, it keeps wafer wet by spraying, reduces the dosage of pure water.
Description
Technical field
The present invention relates to a kind of wafer high-efficiency washing devices, and in particular to the crystalline substance on a kind of wet method equipment of semiconductor field
Circle high-efficiency washing device.
The invention further relates to a kind of wafer high-efficiency washing methods.
Background technique
In wafer corrosion field, part chemicals has very high toughness since its molecular structure is special, wafer from this
It needs to be put into sink rapidly after being taken out in a little sticky medical fluids and clean.
Currently, the mode for being all made of spray irrigation in the industry cleans the chemicals of crystal column surface.Traditional spray side
Formula due to by wafer be exposed to air flowing and opposing open space in, the easy to carry oxygen of the pure water sprayed out to
Secondary oxidation brought to crystal column surface, forms that particle is non-uniform to be distributed in silicon chip surface.
Summary of the invention
It is sprayed the technical issues of exposing bring secondary oxidation in air to solve wafer, the present invention provides one kind
Wafer high-efficiency washing device.
The present invention also provides a kind of wafer high-efficiency washing methods.The equal of cleaning can be improved by being cleaned by this cleaning device
Even property solves the problems, such as secondary destruction of the oxygen carried in spray to wafer.
The technical solution adopted by the present invention:
A kind of wafer high-efficiency washing device, it includes sink, and wafer to be cleaned, lid above the sink are placed in the sink
There is overhead guard, spray device is provided in the overhead guard, the bottom of gullet two sides are provided with water inlet pipe, the sink two sides
Face is provided with overflow port, and the bottom of the sink is provided with leakage fluid dram.
Further, the spray device includes multiple spray tubes and multiple injection spray pipes.
Further, the bottom of gullet two sides are provided with air inlet pipe, have been passed through nitrogen in the air inlet pipe.
A kind of wafer high-efficiency washing method provided by the invention, the method for cleaning wafer mainly comprise the steps that
The first step, wafer is after chemically product slot comes out and rapidly enters the sink for filling pure water, on overhead guard automatic cover, opens air inlet
Pipe allows high pure nitrogen to enter cavity, excludes chamber air;
Second step starts water inlet pipe feed flow, dilutes and remove the change of the adherency of crystal column surface by the way of impregnating overflow cleaning
Product;
Third step, water inlet pipe stop feed flow, open leakage fluid dram, and cleaning solution flows out rapidly from leakage fluid dram, opens simultaneously spray tube, make
Pure water sprays crystal column surface from the top down;
4th step after water tank liquid is drained, opens water inlet pipe, and fluid infusion opens simultaneously spray tube, sprays pure water from the top down
Crystal column surface;
5th step when liquid level rises to overflow port, stops spraying and continuing feed flow overflow cleaning;
6th step, then spray tube is closed, injection spray pipe is opened, keeps crystal column surface wet;
7th step closes air inlet pipe, takes away overhead guard, take wafer away.
6th step before opening injection spray pipe, repeats third portion and the 5th step several times depending on the toughness of chemicals.
Compared with prior art, beneficial effects of the present invention: wafer high-efficiency washing device of the invention is provided with air inlet pipe
With spray device, nitrogen is led into sink by air inlet pipe, excludes air, reduced spray liquid and summarize the general of doping oxygen
Rate;Spray and both spraying modes are separately carried out in different periods, and spray guarantees that each wafer can be cleaned uniformly, spraying to protect
It is wet to hold wafer, reduces the dosage of pure water.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of wafer high-efficiency washing device of the invention.
1, sink, 2, wafer, 3, overhead guard, 4, water inlet pipe, 5, overflow port, 6, leakage fluid dram, 7, spray tube, 8, injection spray pipe, 9,
Air inlet pipe.
Specific embodiment
In order to deepen the understanding of the present invention, with reference to the accompanying drawing and specific embodiment is described in detail, this explanation
The examples are only for explaining the invention described in book, is not used to limit the present invention.
Shown in Fig. 1, a kind of wafer high-efficiency washing device of the invention, it includes sink 1, is placed in sink 1 to be cleaned
Wafer 2 is stamped overhead guard 3 above sink 1, spray device is provided in overhead guard 3,1 two sides of the bottom of sink are provided with water inlet pipe
4,1 two sides of sink are provided with overflow port 5, and the bottom of sink 1 is provided with leakage fluid dram 6.
Spray device includes more spray tubes 7 and Duo Gen injection spray pipe 8.Wafer 2 is mainly using submergence overflow spray
Cleaning method, jet pipe are divided into two kinds: one is sprays, can effectively wash away the chemical residual of crystal column surface;Another kind is spray
Mist, it can be ensured that crystal column surface is wet, which separately carries out in different periods.
1 two sides of the bottom of sink are provided with air inlet pipe 9, have been passed through nitrogen in the air inlet pipe 9.In being full of using high pure nitrogen
Chamber, can reduce spray in liquid entrainment oxygen a possibility that, to protect crystal column surface.
Wafer is cleaned using above-mentioned cleaning device, wafer high-efficiency washing method is mainly following steps:
The first step, wafer is after chemically product slot comes out and rapidly enters the sink 1 for filling pure water, on 3 automatic cover of overhead guard, open into
Tracheae 9 allows high pure nitrogen to enter cavity, excludes chamber air;Reduce the possibility that wafer is oxidized;
Second step starts 4 feed flow of water inlet pipe, dilutes and remove the change of the adherency of crystal column surface by the way of impregnating overflow cleaning
Product;It makes sink 1 interior full of water, is convenient for immersion decontamination;
Third step, water inlet pipe 4 stop feed flow, open leakage fluid dram 6, and cleaning solution is flowed out from leakage fluid dram 6 rapidly, open simultaneously spray tube
7, so that pure water is sprayed crystal column surface from the top down;Guarantee that each wafer can be cleaned uniformly;
4th step after liquid is drained in sink 1, opens water inlet pipe 4, and fluid infusion opens simultaneously spray tube 7, sprays pure water from the top down
Drench crystal column surface;Spray enhancing cleaning effect again;
5th step when liquid level rises to overflow port 5, stops spraying and continuing feed flow overflow cleaning;
6th step repeats third portion depending on the toughness of chemicals and the 5th step several times, then by spray tube 7 is closed, and opens
Injection spray pipe 8;So that wafer keeps wet;
7th step closes air inlet pipe 9, takes away overhead guard 3, take wafer 2 away.
Lead to nitrogen into sink 1 by air inlet pipe 9, exclude air using high pure nitrogen, reduces spray liquid and summarize doping oxygen
The probability of gas;Spray vertical injection from the top down, guarantees that each wafer can be cleaned uniformly, and enhance cleaning effect;Finally adopt
With spray clean, main purpose is to make to expose aerial wafer to keep wet, reduces the dosage of pure water.
Cleaning method of the invention improves the uniformity of cleaning, and the oxygen for solving to carry in spray is to the secondary of wafer
The problem of destruction.
Claims (5)
1. a kind of wafer high-efficiency washing device, it is characterised in that: it includes sink, and wafer to be cleaned is placed in the sink,
It is stamped overhead guard above the sink, spray device is provided in the overhead guard, the bottom of gullet two sides are provided with into water
Pipe, the sink two sides are provided with overflow port, and the bottom of the sink is provided with leakage fluid dram.
2. a kind of wafer high-efficiency washing device according to claim 1, it is characterised in that: the spray device includes
Multiple spray tubes and multiple injection spray pipes.
3. a kind of wafer high-efficiency washing device according to claim 1, it is characterised in that: the bottom of gullet two sides setting
There is air inlet pipe, has been passed through nitrogen in the air inlet pipe.
4. a kind of wafer high-efficiency washing method, it is characterised in that: the method for cleaning wafer mainly comprises the steps that
The first step, wafer is after chemically product slot comes out and rapidly enters the sink for filling pure water, on overhead guard automatic cover, opens air inlet
Pipe allows high pure nitrogen to enter cavity, excludes chamber air;
Second step starts water inlet pipe feed flow, dilutes and remove the change of the adherency of crystal column surface by the way of impregnating overflow cleaning
Product;
Third step, water inlet pipe stop feed flow, open leakage fluid dram, and cleaning solution flows out rapidly from leakage fluid dram, opens simultaneously spray tube, make
Pure water sprays crystal column surface from the top down;
4th step after water tank liquid is drained, opens water inlet pipe, and fluid infusion opens simultaneously spray tube, sprays pure water from the top down
Crystal column surface;
5th step when liquid level rises to overflow port, stops spraying and continuing feed flow overflow cleaning;
6th step, then spray tube is closed, injection spray pipe is opened, keeps crystal column surface wet;
7th step closes air inlet pipe, takes away overhead guard, take wafer away.
5. a kind of wafer high-efficiency washing method according to claim 4, it is characterised in that: the 6th step, open injection spray pipe it
Before, third portion and the 5th step are repeated several times depending on the toughness of chemicals.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201811170089.0A CN109201608A (en) | 2018-10-09 | 2018-10-09 | A kind of wafer high-efficiency washing device and cleaning method |
Applications Claiming Priority (1)
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CN201811170089.0A CN109201608A (en) | 2018-10-09 | 2018-10-09 | A kind of wafer high-efficiency washing device and cleaning method |
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CN109201608A true CN109201608A (en) | 2019-01-15 |
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CN201811170089.0A Pending CN109201608A (en) | 2018-10-09 | 2018-10-09 | A kind of wafer high-efficiency washing device and cleaning method |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111136059A (en) * | 2019-12-25 | 2020-05-12 | 有研光电新材料有限责任公司 | Cleaning device and cleaning method for raw material germanium |
CN111790663A (en) * | 2020-05-27 | 2020-10-20 | 北京北方华创微电子装备有限公司 | Wafer cleaning device and wafer cleaning machine |
CN112387647A (en) * | 2021-01-20 | 2021-02-23 | 常州江苏大学工程技术研究院 | Silicon wafer cleaning method |
CN112387646A (en) * | 2021-01-20 | 2021-02-23 | 常州江苏大学工程技术研究院 | Anti-overflow silicon chip cleaning equipment |
CN112582305A (en) * | 2020-12-04 | 2021-03-30 | 联合微电子中心有限责任公司 | Single-wafer type wet cleaning device and cleaning method thereof |
CN112992652A (en) * | 2019-12-16 | 2021-06-18 | 中芯集成电路(宁波)有限公司 | Wet cleaning device and cleaning method |
Citations (9)
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EP0490405A1 (en) * | 1990-12-14 | 1992-06-17 | Shin-Etsu Handotai Company Limited | Apparatus for cleaning silicon wafers |
JPH11214341A (en) * | 1998-01-28 | 1999-08-06 | Kaijo Corp | Method for rinsing object |
JP2002289574A (en) * | 2001-03-27 | 2002-10-04 | Dainippon Screen Mfg Co Ltd | Substrate treating equipment |
KR20070038232A (en) * | 2005-10-05 | 2007-04-10 | 삼성전자주식회사 | Batch type wet cleaning apparatus for wafer |
CN101295622A (en) * | 2007-04-24 | 2008-10-29 | 中芯国际集成电路制造(上海)有限公司 | Device and method for cleaning wafer |
JP2009027078A (en) * | 2007-07-23 | 2009-02-05 | Dainippon Screen Mfg Co Ltd | Substrate processing apparatus |
CN203124337U (en) * | 2013-03-01 | 2013-08-14 | 中芯国际集成电路制造(北京)有限公司 | Wafer cleaning device |
CN103871938A (en) * | 2014-03-31 | 2014-06-18 | 上海华力微电子有限公司 | Rinse tank for rinsing semiconductor wafer |
CN207250464U (en) * | 2017-08-29 | 2018-04-17 | 上海强华实业股份有限公司 | A kind of wafer fast draining wash tank |
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2018
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EP0490405A1 (en) * | 1990-12-14 | 1992-06-17 | Shin-Etsu Handotai Company Limited | Apparatus for cleaning silicon wafers |
JPH11214341A (en) * | 1998-01-28 | 1999-08-06 | Kaijo Corp | Method for rinsing object |
JP2002289574A (en) * | 2001-03-27 | 2002-10-04 | Dainippon Screen Mfg Co Ltd | Substrate treating equipment |
KR20070038232A (en) * | 2005-10-05 | 2007-04-10 | 삼성전자주식회사 | Batch type wet cleaning apparatus for wafer |
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JP2009027078A (en) * | 2007-07-23 | 2009-02-05 | Dainippon Screen Mfg Co Ltd | Substrate processing apparatus |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112992652A (en) * | 2019-12-16 | 2021-06-18 | 中芯集成电路(宁波)有限公司 | Wet cleaning device and cleaning method |
CN111136059A (en) * | 2019-12-25 | 2020-05-12 | 有研光电新材料有限责任公司 | Cleaning device and cleaning method for raw material germanium |
CN111136059B (en) * | 2019-12-25 | 2022-04-15 | 有研国晶辉新材料有限公司 | Cleaning device and cleaning method for raw material germanium |
CN111790663A (en) * | 2020-05-27 | 2020-10-20 | 北京北方华创微电子装备有限公司 | Wafer cleaning device and wafer cleaning machine |
CN112582305A (en) * | 2020-12-04 | 2021-03-30 | 联合微电子中心有限责任公司 | Single-wafer type wet cleaning device and cleaning method thereof |
CN112387647A (en) * | 2021-01-20 | 2021-02-23 | 常州江苏大学工程技术研究院 | Silicon wafer cleaning method |
CN112387646A (en) * | 2021-01-20 | 2021-02-23 | 常州江苏大学工程技术研究院 | Anti-overflow silicon chip cleaning equipment |
CN112387646B (en) * | 2021-01-20 | 2021-05-18 | 常州江苏大学工程技术研究院 | Anti-overflow silicon chip cleaning equipment |
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Application publication date: 20190115 |
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