CN203118945U - 一种高发光效率的led大功率器件封装结构 - Google Patents
一种高发光效率的led大功率器件封装结构 Download PDFInfo
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- CN203118945U CN203118945U CN2013201092872U CN201320109287U CN203118945U CN 203118945 U CN203118945 U CN 203118945U CN 2013201092872 U CN2013201092872 U CN 2013201092872U CN 201320109287 U CN201320109287 U CN 201320109287U CN 203118945 U CN203118945 U CN 203118945U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
本实用新型公开了一种高发光效率的LED大功率器件封装结构,包括包括18颗小功率发蓝光LED芯片和承接座,其特征在于:所述的18颗小功率发蓝光LED芯片固定在承接座中,18颗小功率发蓝光LED芯片上和正、负金属承接座之间通过导线相连,所述承接座中填充有覆盖所述18颗小功率发蓝光LED芯片的荧光体;所述18颗小功率发蓝光LED芯片与承接座采用三串六并的连接方式进行连接。本实用新型具有能量利用效率高,光斑均匀,不需二次光学配光,成本低的优点。
Description
技术领域
本实用新型涉及一种LED封装结构,具体涉及一种高发光效率的LED大功率器件封装结构。
背景技术
LED(发光二极管)作为一种新型光源,凭借它具有低耗能、无污染、体积小、使用方便灵活等优点,被广泛用于建筑、太阳能路灯、手电筒、汽车灯、台灯、背光源、射灯、庭院、壁灯、家居的小面积装饰照明,以及集装饰与广告为一体的商业照明,但大功率的发光效率低一直成为瓶颈。
现有大功率白光LED基本上有三种方式。一种是朗柏型:需要二次光学配光,工艺复杂难控制,发光效率不理想;一种是TOP型单晶:使用一颗45mil的蓝光晶片,发光效率不高,性价比低。一种是TOP型红绿蓝:将红、绿、蓝三种LED封装在一起,同时使其发光而产生白光,必须将各种LED的特性组合起来,驱动电路比较复杂。
发明内容
本实用新型所要解决的技术问题在于提供一种能量利用效率高,光斑均匀,不需二次光学配光,成本低的一种高发光效率的LED大功率器件封装结构。
本实用新型所要解决的技术问题采用以下技术方案来实现。
一种高发光效率的LED大功率器件封装结构,包括包括18颗小功率发蓝光LED芯片和承接座,其特征在于:所述的18颗小功率发蓝光LED芯片固定在承接座中,18颗小功率发蓝光LED芯片上和正、负金属承接座之间通过导线相连,所述承接座中填充有覆盖所述18颗小功率发蓝光LED芯片的荧光体。
所述18颗小功率发蓝光LED芯片与承接座采用三串六并的连接方式进行连接。
本实用新型的有益效果是:区别于现有朗柏型和TOP型的需要二次光学配光,工艺复杂难控制,使用一颗45mil的蓝光晶片,发光效率不高(90-100)lm/W,性价比低,将红、绿、蓝三种LED封装在一起,同时使其发光而产生白光,必须将各种LED的特性组合起来,驱动电路比较复杂的情况。本实用新型通将18颗小功率发蓝光LED芯片集成封装于承接座内, 与现有技术相比大功率白光LED的发光效率高20%~40%,可达到(130-140)lm/W,能量利用效率高,光斑均匀,不需二次光学配光,成本低。
附图说明
图1为本实用新型剖面结构示意图;
图2为本实用新型俯视图。
具体实施方式
为了使本实用新型实现的技术手段、创作特征、达成目的与功效易于明白了解,下面结合具体图示,进一步阐述本实用新型。
如图1所示,一种高发光效率的LED大功率器件封装结构,包括包括18颗小功率发蓝光LED芯片1和承接座2, 18颗小功率发蓝光LED芯片1固定在承接座2中,18颗小功率发蓝光LED芯片1上和正、负承接座2之间通过导线3相连,承接座2中填充有覆盖所述18颗小功率发蓝光LED芯片1的荧光体4。
18颗小功率发蓝光LED芯片1与承接座2采用三串六并的连接方式进行连接。本实用新型通将18颗小功率发蓝光LED芯片1集成封装于承接座2内,与现有技术相比大功率白光LED的发光效率高20%~40%,可达到(130-140)lm/W,能量利用效率高,光斑均匀,不需二次光学配光,成本低。
以上显示和描述了本实用新型的基本原理和主要特征和本实用新型的优点。本行业的技术人员应该了解,本实用新型不受上述实施例的限制,上述实施例和说明书中描述的只是说明本实用新型的原理,在不脱离本实用新型精神和范围的前提下,本实用新型还会有各种变化和改进,这些变化和改进都落入要求保护的本实用新型范围内。本实用新型要求保护范围由所附的权利要求书及其等效物界定。
Claims (2)
1.一种高发光效率的LED大功率器件封装结构,包括包括18颗小功率发蓝光LED芯片和承接座,其特征在于:所述的18颗小功率发蓝光LED芯片固定在承接座中,18颗小功率发蓝光LED芯片上和正、负金属承接座之间通过导线相连,所述承接座中填充有覆盖所述18颗小功率发蓝光LED芯片的荧光体。
2.根据权利要求1所述一种高发光效率的LED大功率器件封装结构,其特征在于:所述18颗小功率发蓝光LED芯片与承接座采用三串六并的连接方式进行连接。
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