CN203085630U - area source device with top surface of high light extracting rate and side surfaces of low light extracting rate - Google Patents
area source device with top surface of high light extracting rate and side surfaces of low light extracting rate Download PDFInfo
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- CN203085630U CN203085630U CN 201320063420 CN201320063420U CN203085630U CN 203085630 U CN203085630 U CN 203085630U CN 201320063420 CN201320063420 CN 201320063420 CN 201320063420 U CN201320063420 U CN 201320063420U CN 203085630 U CN203085630 U CN 203085630U
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- semiconductor layer
- light extracting
- side surfaces
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Abstract
An area source device with a top surface of high light extracting rate and side surfaces of low light extracting rate comprises a substrate, semiconductor layers, a luminescent layer and electrodes, and is characterized in that side surfaces and the bottom of the substrate have reflective coatings; the side surfaces of the substrate are perpendicular to the bottom or the side surfaces incline to form a certain angle to the bottom; a first semiconductor layer is arranged on the substrate; the luminescent layer is disposed on the first semiconductor layer; a second semiconductor layer is arranged on the luminescent layer; a first electrode is arranged on the first semiconductor layer; and a second electrode is mounted on the second semiconductor layer. The area source device provided by the utility model has advantages of low light extracting rate of the side surfaces and high light extracting rate of the top surface, and is an idea area source.
Description
Technical field
The utility model relates to a kind of light-emitting component, the low area source device of the high side of particularly a kind of end face light emission rate light emission rate.
Background technology
The light-emitting diode of traditional horizontal electrode structure as shown in Figure 1, comprises a sapphire insulated substrate 01, and wherein there is reflecting coating (ODR) 07 (b) bottom surface 09 of this substrate, and the side 08 of substrate 01 is vertical with bottom surface 09; One first semiconductor layer 02 is located on this substrate 01; One luminescent layer 03 is located on this first semiconductor layer 02; One second semiconductor layer 04 is located on this luminescent layer 03; One first electrode 06 is located on first semiconductor layer 02; One second electrode 05 is located on second semiconductor layer 04.
The serious characteristics of led chip ubiquity side bright dipping of above horizontal electrode structure, because the substrate of the LED of horizontal electrode structure mostly is light transmissive materials such as sapphire, the luminescent layer of LED is the uniformly light-emitting material, its light that sends part directly reflects the back from the substrate side surfaces outgoing by substrate side surfaces or through substrate bottom surface, and the light of this a part of outgoing accounts for 40% of total amount of light.
And in some special application field, in car headlamp illumination or spotlight, often need led chip closely to arrange when LED encapsulate, so the side bright dipping of led chip causes easily and blocked by adjacent chips or absorb, and causes the decline of encapsulation light efficiency; Even the light of led chip side outgoing is not blocked on the other hand, in car light and spotlight, these light also are difficult to be utilized.
Summary of the invention
The purpose of this utility model is at the defective that exists in the prior art, provides the high side of a kind of end face light emission rate light emission rate low area source device.The utility model is by with substrate side surfaces and bottom surface plating reflector layer, and makes laterally inclinedly, can make the end face outgoing of light from chip, improves encapsulation light efficiency and the brightness of LED.
The utility model comprises: substrate, semiconductor layer, luminescent layer, electrode, there is reflecting coating the side and the bottom surface that it is characterized in that described substrate, laterally inclined and bottom surface vertical with the bottom surface or substrate, the side of substrate becomes 90 ° to 160 ° angle, first semiconductor layer is located on the substrate, luminescent layer is located on first semiconductor layer, second semiconductor layer is located on the luminescent layer, and first electrode is located on first semiconductor layer, and second electrode is located on second semiconductor layer.
The side of described substrate and bottom surface are distributed Bragg reflector (DBR) or comprehensive reflector (ODR), and distributed Bragg reflector (DBR) is silicon dioxide (SiO
2) layer and titanium dioxide (TiO
2) layer multi-layer film structure that alternately constitutes, comprehensive reflector (ODR) is silicon dioxide (SiO
2) layer and titanium dioxide (TiO
2) alternately the multilayer film and the bottom of formation are the structure of metal reflective layer to layer.
The utility model has the advantages that and have lower side light emission rate and higher end face light emission rate, more approaching desirable area source.
Description of drawings
Area source device sectional structure schematic diagram under Fig. 1 prior art;
The sectional structure schematic diagram of Fig. 2 embodiment one of the present utility model;
The sectional structure schematic diagram of Fig. 3 embodiment two of the present utility model.
Among the figure: 01 sapphire substrate, 02n type semiconductor layer, 03 luminescent layer, 04P type semiconductor layer, 05P type semiconductor layer electrode, 06n type semiconductor layer electrode, 07 (b) sapphire bottom surface reflecting coating (ODR), 08 sapphire substrate side, 09 sapphire substrate bottom surface.
100 light-emitting components, 101 substrates, 102 first semiconductor layers, 103 luminescent layers, 104 second semiconductor layers, 105 second semiconductor layer electrodes, 106 first semiconductor layer electrodes, 107 substrate reflector layers, 107 (a) substrate side surfaces reflector layer, 107 (b) substrate bottom surface reflector layer, 108 substrate side surfaces, 109 substrate bottom surface, 200 light-emitting components, 201 substrates, 202 first semiconductor layers, 203 luminescent layers, 204 second semiconductor layers, 205 second semiconductor layer electrodes, 206 first semiconductor layer electrodes, 207 substrate reflector layers, 207 (a) substrate side surfaces reflector layer, 207 (b) substrate bottom surface reflector layer, 208 substrate side surfaces, 209 substrate bottom surface.
Embodiment
Further specify embodiment of the present utility model below in conjunction with accompanying drawing:
Embodiment one
Referring to Fig. 2, present embodiment discloses a light-emitting component 100, comprising: a substrate 101, and wherein there is reflecting coating 107 side 108 of this substrate and bottom surface 109, and the side 108 of substrate is a plane inclined; First semiconductor layer 102 is located on the substrate 101; Luminescent layer 103 is located on this first semiconductor layer 102; Second semiconductor layer 104 is located on this luminescent layer 103; First electrode 106 is located on first semiconductor layer 102; Second electrode 105 is located on second semiconductor layer 104.
The material of substrate 101 is sapphire (Al
2O
3), its side 108 is 120 ° with the angle of bottom surface 109, side 108 is comprehensive reflector ODR with the reflecting coating 107 of bottom surface 109.Comprehensive reflector (ODR) is silicon dioxide (SiO
2) layer and titanium dioxide (TiO
2) alternately the multilayer film and the bottom of formation are the structure of metal reflective layer to layer.
Embodiment two
Referring to Fig. 3, present embodiment discloses a light-emitting component 200, comprising: substrate 201, and wherein there is reflecting coating 207 side 208 of this substrate and bottom surface 209, and the side 208 of substrate is the plane vertical with bottom surface 209; First semiconductor layer 202 is located on the substrate 201; Luminescent layer 203 is located on this first semiconductor layer 202; Second semiconductor layer 204 is located on this luminescent layer 203; First electrode 206 is located on first semiconductor layer 202; Second electrode 205 is located on second semiconductor layer 204.The material of substrate 201 is sapphire (Al
2O
3), side 208 is distributed Bragg reflector DBR with the reflecting coating 207 of bottom surface 209.Distributed Bragg reflector DBR is silicon dioxide (SiO
2) layer and titanium dioxide (TiO
2) layer multi-layer film structure that alternately constitutes.
Claims (2)
1. low area source device of the high side of end face light emission rate light emission rate, comprise: substrate, semiconductor layer, luminescent layer, electrode, there is reflecting coating the side and the bottom surface that it is characterized in that described substrate, laterally inclined and bottom surface vertical with the bottom surface or substrate, the side of substrate becomes 90 ° to 160 ° angle, first semiconductor layer is located on the substrate, luminescent layer is located on first semiconductor layer, second semiconductor layer is located on the luminescent layer, first electrode is located on first semiconductor layer, and second electrode is located on second semiconductor layer.
2. the low area source device of the high side of end face light emission rate according to claim 1 light emission rate, the side and the bottom surface that it is characterized in that described substrate are distributed Bragg reflector or comprehensive reflector, the distributed Bragg reflector is the multi-layer film structure that silicon dioxide layer and titanium dioxide layer alternately constitute, and comprehensive reflector is that multilayer film and the bottom that silicon dioxide layer and titanium dioxide layer alternately constitute is the structure of metal reflective layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320063420 CN203085630U (en) | 2013-02-04 | 2013-02-04 | area source device with top surface of high light extracting rate and side surfaces of low light extracting rate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320063420 CN203085630U (en) | 2013-02-04 | 2013-02-04 | area source device with top surface of high light extracting rate and side surfaces of low light extracting rate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203085630U true CN203085630U (en) | 2013-07-24 |
Family
ID=48831440
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320063420 Expired - Lifetime CN203085630U (en) | 2013-02-04 | 2013-02-04 | area source device with top surface of high light extracting rate and side surfaces of low light extracting rate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203085630U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106848029A (en) * | 2016-12-07 | 2017-06-13 | 华灿光电（浙江）有限公司 | High-brightness light-emitting diode chip and manufacturing method thereof |
| CN108269885A (en) * | 2016-12-30 | 2018-07-10 | 晶能光电（江西）有限公司 | A kind of single side light extracting LED chip preparation method |
-
2013
- 2013-02-04 CN CN 201320063420 patent/CN203085630U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106848029A (en) * | 2016-12-07 | 2017-06-13 | 华灿光电（浙江）有限公司 | High-brightness light-emitting diode chip and manufacturing method thereof |
| CN108269885A (en) * | 2016-12-30 | 2018-07-10 | 晶能光电（江西）有限公司 | A kind of single side light extracting LED chip preparation method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130724 |