CN202978890U

CN202978890U - Integrated circuit structure for driving power MOSFET half-bridge

Info

Publication number: CN202978890U
Application number: CN 201220644561
Authority: CN
Inventors: 张骁宇; 陈冠峰; 毛旭进; 蒋亚平
Original assignee: Wuxi China Resources Semico Co Ltd
Current assignee: CRM ICBG Wuxi Co Ltd
Priority date: 2012-11-29
Filing date: 2012-11-29
Publication date: 2013-06-05
Anticipated expiration: 2022-11-29

Abstract

The utility model relates to an integrated circuit structure for driving power MOSFET half-bridge, and belongs to the technical field of circuit structure. The drive integrated circuit structure comprises a power module, a power MOSFET half-bridge upper tube drive circuit module and a power MOSFET half-bridge lower tube drive circuit module, input terminals of the power MOSFET half-bridge upper tube drive circuit module and the power MOSFET half-bridge lower tube drive circuit module are respectively control signal input terminals of the power MOSFET half-bridge upper tube and the power MOSFET half-bridge lower tube, and the power module comprises a current source output terminal and a voltage source output terminal respectively connected with the power MOSFET half-bridge upper tube drive circuit module and the power MOSFET half-bridge lower tube drive circuit module. A discrete device drive circuit uses a big PCB plate area, circuit is complex and installation debug is not convenient, and the problems are solved by the integrated circuit structure through general bipolar integrated circuit manufacture technology design, dead zone time control and upper-and-lower tubes signal interlock functions are built in the structure, and the integrated circuit structure is low in production cost, and application scope is relatively wider.

Description

Be applied to the integrated circuit structure of driving power MOSFET half-bridge

Technical field

The utility model relates to the circuit structure technical field, and particularly the integrated circuit structure technical field, specifically refer to a kind of integrated circuit structure that is applied to driving power MOSFET half-bridge.

Background technology

The circuit diagram of common power MOSFET half-bridge circuit as shown in Figure 1.The source that the power tube that comprises two series connection, the drain terminal of upper pipe connect power supply, upper pipe connects the drain terminal of lower pipe, the source ground connection of lower pipe.The junction of two power tubes is as the output of half-bridge.

The grid of upper pipe N1 and lower pipe N2 must connect the driving signal and could work, and pipe drives signal is up and down provided by drive circuit.High level when upper pipe drives signal, when lower pipe driving signal is low level, upper pipe conducting, lower pipe cut-off, half-bridge output high level; Low level when upper pipe drives signal, when lower pipe driving signal is high level, upper pipe cut-off, lower pipe conducting, half-bridge output low level.MOSFET is operated in the amplification region for guaranteed output, and the gate drive signal high level needs enough high.For this reason, the high level of upper pipe driving signal can be higher than supply voltage.In order to prevent that the situation of managing up and down conducting simultaneously from occurring, upper pipe drives signal and lower pipe driving signal can not be high level simultaneously, and adds Dead Time when driving the conversion of signal high-low level for two.Half-bridge work wave schematic diagram as shown in Figure 2.

The power MOSFET half-bridge drive circuit can be realized by discrete device, also can be realized by integrated circuit.Adopt the drive circuit of discrete device can take larger pcb board area, and to realize Dead Time, the function such as pipe interlocking can make whole circuit very complicated up and down, the increase of Installation and Debugging difficulty.Adopting integrated circuit is reasonable scheme, and integrated circuit can realize very easily that Dead Time is controlled, the function such as pipe interlocking up and down, and takies very little PCB area, is convenient to installment and debugging.

Electric Bicycle Motor is generally driven by three groups of half-bridge power MOSFET.The half-bridge power supply is provided by electromobile battery, and several specifications of 36V, 48V and 60V are generally arranged, and considers that overcharge of a battery causes that virtual voltage is higher 15%, and the storage battery ceiling voltage is 69V.It is the IR2103 of the international arrangement of employing company that a kind of scheme that drives half-bridge power MOSFET is arranged at present.But IP2103 is for the design of 600V high-voltage applications, adopts special high pressure trap technique preparation, and cost is higher, and is also uneconomical for the application of ceiling voltage 69V.

The utility model content

The purpose of this utility model is to have overcome above-mentioned shortcoming of the prior art, providing a kind of adopts common bipolar integrated circuit fabrication process to design, and the signal interlock function is controlled and managed up and down to built-in Dead Time, it is large that effective solution discrete device drive circuit takies the pcb board area, circuit is complicated, the problems such as Installation and Debugging inconvenience, and cheap for manufacturing cost, the integrated circuit structure that is applied to driving power MOSFET half-bridge that has wide range of applications.

In order to realize above-mentioned purpose, the integrated circuit structure that is applied to driving power MOSFET half-bridge of the present utility model has following formation:

It comprises power module, upper tube drive circuit module and lower tube drive circuit module, and the input of described upper tube drive circuit module is upper management and control signal input part processed; The input of described lower tube drive circuit module is lower management and control signal input part processed; Described power module comprises current source output and voltage output terminal, and described current source output is connected with voltage output terminal and is connected described upper tube drive circuit module and lower tube drive circuit module.

This is applied in the integrated circuit structure of driving power MOSFET half-bridge, described lower tube drive circuit module comprises lower pipe driver element and lower pipe driver output unit, and described lower management and control signal input part processed sequentially connects described lower pipe by described lower pipe driver element and lower pipe driver output unit and drives signal output part; Described lower pipe driver element comprises: the 7th not gate G7, the 9th not gate G9, the tenth not gate G10, the 11 NOR gate G11, the 12 NOR gate G12, the 13 NOR gate G13 and the second capacitor C 2, and described lower management and control signal input part processed connects the input of described the 7th not gate G7; The output of the 7th not gate G7 is connected with the input of described the 9th not gate G9; The output of described the 9th not gate G9 is connected with the input of described the tenth not gate G10; The input of described the 11 NOR gate G11 is connected with the output of described the 9th not gate G9, and another input of the 11 NOR gate G11 is connected with the output of described the 12 NOR gate G12; The output of described the tenth not gate G10 is connected with an end of described the second capacitor C 2, the other end ground connection of this second capacitor C 2; The input of described the 12 NOR gate G12 is connected with the output of described the tenth not gate G10, and another input of the 12 NOR gate G12 is connected with the output of described the 11 NOR gate G11; The output of described the 13 NOR gate G13 connects the output of described the 12 NOR gate G12; The output described lower pipe driver output of the connection unit of described the 13 NOR gate G13.

This is applied in the integrated circuit structure of driving power MOSFET half-bridge, and described lower pipe driver output unit comprises the 8th NPN triode T8, the 9th NPN triode T9, the tenth PNP triode T10, the 11 NPN triode T11, the 12 NPN triode T12, the 13 NPN triode T13, the 6th resistance R 6, the 7th resistance R 7 the 8th resistance R 8 and the 9th resistance R 9; The grounded emitter of described the 8th NPN triode T8, the base stage of the 8th NPN triode T8 connects an end of described the 6th resistance R 6.The other end of the 6th resistance R 6 connects the output of described the 13 NOR gate G13; The grounded emitter of described the 9th NPN triode T9, the base stage of the 9th NPN triode T9 connects an end of described the 7th resistance R 7, the output of described the 13 NOR gate G13 of another termination of the 7th resistance R 7; The collector electrode of described the 8th NPN triode T8 is connected with described current source output, and connects the base stage of described the 12 NPN triode T12; Described the 8th resistance R 8 one ends connect power supply, and the other end of the 8th resistance R 8 connects respectively the base stage of described the tenth PNP triode T10 and the collector electrode of described the 9th NPN triode T9; Described the tenth PNP triode T10 and the 11 NPN triode T11 are connected to the Darlington transistor structure; The emitter of described the tenth PNP triode T10 all is connected with power supply with the collector electrode of the 11 NPN triode T11; The collector electrode of the tenth PNP triode T10 is connected with the base stage of the 11 NPN triode T11; The emitter of the 11 NPN triode T11 connects described lower pipe and drives signal output part; Described the 12 NPN triode T12 and described the 13 NPN triode T13 are connected to the Darlington transistor structure; The collector electrode of described the 12 NPN triode T12 and the 13 NPN triode T13 is connected, and together connects described lower pipe driving signal output part; The emitter of described the 12 NPN triode T12 connects the base stage of described the 13 NPN triode T13 and is connected with an end of described the 9th resistance R 9; The equal ground connection of emitter of the other end of the 9th resistance R 9 and described the 13 NPN triode T13.

This is applied in the integrated circuit structure of driving power MOSFET half-bridge, described upper tube drive circuit module comprises pipe driver element and upper pipe driver output unit, and described upper management and control signal input part processed sequentially connects described upper pipe by described upper pipe driver element and upper pipe driver output unit and drives signal output part; Described upper pipe driver element comprises: the first not gate G1, the second not gate G2, the 3rd not gate G3, four nor gate G4, the 5th NOR gate G5, the 6th NOR gate G6 and the first capacitor C 1; Described upper management and control signal input part processed connects the input of described the first not gate G1; The output of this first not gate G1 connects respectively the input of described the second not gate G2 and the 3rd not gate G3; The input of described the 5th NOR gate G5 is connected with the output of described the first not gate G1, and another input of the 5th NOR gate G5 is connected with the output of described four nor gate G4; The output of described the second not gate G2 is connected with described the first capacitor C 1, the other end ground connection of this first capacitor C 1; The input of described four nor gate G4 is connected with the output of described the second not gate G2, and another input of this four nor gate G4 is connected with the output of described the 5th NOR gate G5; The output of described the 6th NOR gate G6 connects the output of described four nor gate G4; The output described upper pipe driver output of the connection unit of described the 6th NOR gate G6.

This is applied in the integrated circuit structure of driving power MOSFET half-bridge, and described upper pipe driver output unit comprises a NPN triode T1, the 2nd NPN triode T2, the 3rd PNP triode T3, the 4th PNP triode T4, the 5th NPN triode T5, the 6th NPN triode T6, the 7th NPN triode T7, the first resistance R 1, the second resistance R 2, the 3rd resistance R 3, the 4th resistance R 4, the 5th resistance R 5, the first diode D1 and the second voltage-stabiliser tube Z2; The grounded emitter of a described NPN triode T1, the base stage of a NPN triode T1 connects an end of described the first resistance R 1, the output of described the 6th NOR gate G6 of another termination of this first resistance R 1; The grounded emitter of described the 2nd NPN triode T2, the base stage of the 2nd NPN triode T2 connects an end of described the second resistance R 2, the output of described the 6th NOR gate G6 of another termination of this second resistance R 2; The collector electrode of a described NPN triode T1 connects described current source output, and connects the P type end of described the first diode D1; The N-type end of the first diode D1 connects the base stage of described the 6th NPN triode T6; The base stage of described the 3rd PNP triode T3 connects the N-type end of described the second voltage-stabiliser tube Z2; The collector electrode of the 3rd PNP triode T3 connects respectively the P type end of described the second voltage-stabiliser tube Z2 and the collector electrode of described the 2nd NPN triode T2; One end of described the 3rd resistance R 3 connects the base stage of described the 3rd PNP triode T3, and the other end of the 3rd resistance R 3 connects the emitter of described the 3rd PNP triode T3; Described the 4th resistance R 4 one ends connect upper pipe and drive the floating power supply end; The other end of described the 4th resistance R 4 connects respectively the base stage of described the 4th PNP triode T4 and the emitter of described the 3rd PNP triode T3; Described the 4th PNP triode T4 and the 5th NPN triode T5 are connected to the Darlington transistor structure; The emitter of described the 4th PNP triode T4 all is connected described upper pipe with the collector electrode of the 5th NPN triode T5 and drives the floating power supply end; The collector electrode of described the 4th PNP triode T4 is connected with the base stage of described the 5th NPN triode T5; The emitter of described the 5th NPN triode T5 connects described upper pipe and drives signal output part; Described the 6th NPN triode T6 and described the 7th NPN triode T7 are connected to the Darlington transistor structure; The collector electrode of described the 6th NPN triode T6 is connected with the collector electrode of described the 7th NPN triode T7, and connects described upper pipe driving signal output part; The emitter of described the 6th NPN triode T6 is connected with the base stage of described the 7th NPN triode T7, and connect an end of described the 5th resistance R 5, the other end of the 5th resistance R 5 be connected the emitter of the 7th NPN triode T7 and all connect upper pipe and drive the floating ground end.

This is applied in the integrated circuit structure of driving power MOSFET half-bridge, another input of described the 13 NOR gate G13 connects the output of described the 3rd not gate G3, and another input of described the 6th NOR gate G6 connects the output of described the 7th not gate G7.

this is applied in the integrated circuit structure of driving power MOSFET half-bridge, described the first not gate G1, the second not gate G2, the 3rd not gate G3, the 7th not gate G7, the 9th not gate G9 and the tenth not gate G10 are the not gate with same line structure, described each not gate includes the 21 NPN triode N1, described the 21 NPN triode N1 collector electrode connects described current source output, the base stage of described the 21 NPN triode N1 is the input of described not gate, the grounded emitter of described the 21 NPN triode N1, the output of the very described not gate of current collection of described the 21 NPN triode N1.

this is applied in the integrated circuit structure of driving power MOSFET half-bridge, described each four nor gate G4, the 5th NOR gate G5, the 6th NOR gate G6, the 11 NOR gate G11, the 12 NOR gate G12 and the 13 NOR gate G13 are the NOR gate with same line structure, each NOR gate includes the 22 NPN triode N2 and the 23 NPN triode N3, the equal ground connection of emitter of described the 22 NPN triode N2 and the 23 NPN triode N3, the collector electrode of described the 22 NPN triode N2 and the 23 NPN triode N3 interconnects and as the output of described NOR gate, the collector electrode of described the 22 NPN triode N2 and the 23 NPN triode N3 all connects described current source output, the base stage of described the 22 NPN triode N2 is an input of described NOR gate, the base stage of described the 23 NPN triode N3 is another input of described NOR gate.

This is applied in the integrated circuit structure of driving power MOSFET half-bridge, and described power module comprises the 31 PNP triode Q1, the 32 PNP triode Q2, the 33 NPN triode Q3, the 34 NPN triode Q4, the 35 NPN triode Q5, the 36 NPN triode Q6, the 37 PNP triode Q7, the 38 NPN triode Q8, the 39 PNP triode Q9, the 40 PNP triode Q10, the 31 resistance R 31, the 32 resistance R 32 and the first voltage-stabiliser tube Z1; One end of described the 31 resistance R 31 connects power supply, and the other end of the 31 resistance R 31 connects the collector electrode of described the 34 NPN triode Q4; The collector electrode of described the 34 NPN triode Q4 and base stage short circuit, and connect the base stage of described the 33 NPN triode Q3; The emitter of described the 34 NPN triode Q4 is connected with the collector electrode of the 36 NPN triode Q6, and connects the base stage of described the 35 NPN triode Q5; The grounded emitter of described the 36 NPN triode Q6; The emitter of described the 31 PNP triode Q1 connects power supply; The collector electrode of described the 31 PNP triode Q1 connects the collector electrode of described the 33 NPN triode Q3, and connects the base stage of described the 32 PNP triode Q2; The emitter of described the 33 NPN triode Q3 is connected with the collector electrode of described the 35 NPN triode Q5, and connects the base stage of described the 36 NPN triode Q6; Described the 32 resistance R 32 1 ends connect the emitter of described the 35 NPN triode Q5, described the 32 resistance R 32 other end ground connection; The emitter of described the 37 PNP triode Q7, the 39 PNP triode Q9 and the 40 PNP triode Q10 all connects power supply; The base stage of described the 37 PNP triode Q7, the 39 PNP triode Q9 and the 40 PNP triode Q10 all is connected with the base stage of described the 31 PNP triode Q1; The emitter of described the 32 PNP triode Q2 also connects the base stage of described the 31 PNP triode Q1; The grounded collector of described the 32 PNP triode Q2; The collector electrode of described the 37 PNP triode Q7 is connected with the base stage of described the 38 NPN triode Q8, and connects the N-type end of described the first voltage-stabiliser tube Z1, the P type end ground connection of this first voltage-stabiliser tube Z1; The collector electrode of described the 38 NPN triode Q8 connects power supply.

This is applied in the integrated circuit structure of driving power MOSFET half-bridge, and the described integrated circuit structure that is applied to driving power MOSFET half-bridge has eight leaded packages.

Adopted the integrated circuit structure that is applied to driving power MOSFET half-bridge of this utility model, because it also comprises power module, upper tube drive circuit module and lower tube drive circuit module, the input of described upper tube drive circuit module is upper management and control signal input part processed; The input of described lower tube drive circuit module is lower management and control signal input part processed; Described power module comprises current source output and voltage output terminal, and described current source output is connected with voltage output terminal and is connected described upper tube drive circuit module and lower tube drive circuit module.Thereby utilize general bipolar integrated circuit design and manufacture technology, efficiently solving the discrete device drive circuit, to take the pcb board area large, circuit is complicated, the problems such as Installation and Debugging inconvenience, and the signal interlock function is controlled and managed up and down to built-in Dead Time, and the integrated circuit structure that is applied to driving power MOSFET half-bridge of the present utility model is cheap for manufacturing cost, and range of application is also comparatively extensive.

Description of drawings

Fig. 1 is the circuit diagram of power MOSFET half-bridge drive circuit of the prior art.

Fig. 2 is the work wave schematic diagram of power MOSFET half-bridge drive circuit of the prior art.

Fig. 3 is the circuit equivalent figure that is applied to the integrated circuit structure of driving power MOSFET half-bridge of the present utility model.

Fig. 4 is the isoboles of the power module of the integrated circuit structure that is applied to driving power MOSFET half-bridge of the present utility model.

Fig. 5 is the not gate isoboles that is applied to the integrated circuit structure of driving power MOSFET half-bridge of the present utility model.

Fig. 6 is the NOR gate isoboles that is applied to the integrated circuit structure of driving power MOSFET half-bridge of the present utility model.

Fig. 7 is the upper pipe driver output unit isoboles of the integrated circuit structure that is applied to driving power MOSFET half-bridge of the present utility model.

Fig. 8 is the lower pipe driver output unit isoboles of the integrated circuit structure that is applied to driving power MOSFET half-bridge of the present utility model.

Fig. 9 is the rest-set flip-flop isoboles that is applied to the integrated circuit structure of driving power MOSFET half-bridge of the present utility model.

Figure 10 is the Dead Time part signal oscillogram that is applied to the integrated circuit structure of driving power MOSFET half-bridge of the present utility model.

Figure 11 is the peripheral applications schematic diagram that is applied to the integrated circuit structure of driving power MOSFET half-bridge of the present utility model.

Figure 12 is the input/output signal oscillogram that is applied to the integrated circuit structure of driving power MOSFET half-bridge of the present utility model.

Embodiment

In order more clearly to understand technology contents of the present utility model, describe in detail especially exemplified by following examples.

See also shown in Figure 3ly, be the circuit equivalent figure that is applied to the integrated circuit structure of driving power MOSFET half-bridge of the present utility model.

This integrated circuit structure that is applied to driving power MOSFET half-bridge comprises power module, upper tube drive circuit module and lower tube drive circuit module, and the input of described upper tube drive circuit module is upper management and control signal input part processed; The input of described lower tube drive circuit module is lower management and control signal input part processed; Described power module comprises current source output and voltage output terminal, and described current source output is connected with voltage output terminal and is connected described upper tube drive circuit module and lower tube drive circuit module.

In a kind of more preferably execution mode, described lower tube drive circuit module comprises lower pipe driver element and lower pipe driver output unit, and described lower management and control signal input part processed sequentially connects the grid of described lower pipe by described lower pipe driver element and lower pipe driver output unit; Described lower pipe driver element comprises: the 7th not gate G7, the 9th not gate G9, the tenth not gate G10, the 11 NOR gate G11, the 12 NOR gate G12, the 13 NOR gate G13 and the second capacitor C 2, and described lower management and control signal input part processed connects the input of described the 7th not gate G7; The output of the 7th not gate G7 is connected with the input of described the 9th not gate G9; The output of described the 9th not gate G9 is connected with the input of described the tenth not gate G10; The input of described the 11 NOR gate G11 is connected with the output of described the 9th not gate G9, and another input of the 11 NOR gate G11 is connected with the output of described the 12 NOR gate G12; The output of described the tenth not gate G10 is connected with an end of described the second capacitor C 2, the other end ground connection of this second capacitor C 2; The input of described the 12 NOR gate G12 is connected with the output of described the tenth not gate G10, and another input of the 12 NOR gate G12 is connected with the output of described the 11 NOR gate G11; The output of described the 13 NOR gate G13 connects the output of described the 12 NOR gate G12; The output described lower pipe driver output of the connection unit of described the 13 NOR gate G13.

Described upper tube drive circuit module comprises pipe driver element and upper pipe driver output unit, and described upper management and control signal input part processed sequentially connects described upper pipe by described upper pipe driver element and upper pipe driver output unit and drives signal output part; Described upper pipe driver element comprises: the first not gate G1, the second not gate G2, the 3rd not gate G3, four nor gate G4, the 5th NOR gate G5, the 6th NOR gate G6 and the first capacitor C 1; Described upper management and control signal input part processed connects the input of described the first not gate G1; The output of this first not gate G1 connects respectively the input of described the second not gate G2 and the 3rd not gate G3; The input of described the 5th NOR gate G5 is connected with the output of described the first not gate G1, and another input of the 5th NOR gate G5 is connected with the output of described four nor gate G4; The output of described the second not gate G2 is connected with described the first capacitor C 1, the other end ground connection of this first capacitor C 1; The input of described four nor gate G4 is connected with the output of described the second not gate G2, and another input of this four nor gate G4 is connected with the output of described the 5th NOR gate G5; The output of described the 6th NOR gate G6 connects the output of described four nor gate G4; The output described upper pipe driver output of the connection unit of described the 6th NOR gate G6.

And another input of described the 13 NOR gate G13 connects the output of described the 3rd not gate G3, and another input of described the 6th NOR gate G6 connects the output of described the 7th not gate G7.

At another kind more preferably in execution mode, as shown in Figure 4, described power module comprises the 31 PNP triode Q1, the 32 PNP triode Q2, the 33 NPN triode Q3, the 34 NPN triode Q4, the 35 NPN triode Q5, the 36 NPN triode Q6, the 37 PNP triode Q7, the 38 NPN triode Q8, the 39 PNP triode Q9, the 40 PNP triode Q10, the 31 resistance R 31, the 32 resistance R 32 and the first voltage-stabiliser tube Z1; One end of described the 31 resistance R 31 connects power supply, and the other end of the 31 resistance R 31 connects the collector electrode of described the 34 NPN triode Q4; The collector electrode of described the 34 NPN triode Q4 and base stage short circuit, and connect the base stage of described the 33 NPN triode Q3; The emitter of described the 34 NPN triode Q4 is connected with the collector electrode of the 36 NPN triode Q6, and connects the base stage of described the 35 NPN triode Q5; The grounded emitter of described the 36 NPN triode Q6; The emitter of described the 31 PNP triode Q1 connects power supply; The collector electrode of described the 31 PNP triode Q1 connects the collector electrode of described the 33 NPN triode Q3, and connects the base stage of described the 32 PNP triode Q2; The emitter of described the 33 NPN triode Q3 is connected with the collector electrode of described the 35 NPN triode Q5, and connects the base stage of described the 36 NPN triode Q6; Described the 32 resistance R 32 1 ends connect the emitter of described the 35 NPN triode Q5, described the 32 resistance R 32 other end ground connection; The emitter of described the 37 PNP triode Q7, the 39 PNP triode Q9 and the 40 PNP triode Q10 all connects power supply; The base stage of described the 37 PNP triode Q7, the 39 PNP triode Q9 and the 40 PNP triode Q10 all is connected with the base stage of described the 31 PNP triode Q1; The emitter of described the 32 PNP triode Q2 also connects the base stage of described the 31 PNP triode Q1; The grounded collector of described the 32 PNP triode Q2; The collector electrode of described the 37 PNP triode Q7 is connected with the base stage of described the 38 NPN triode Q8, and connects the N-type end of described the first voltage-stabiliser tube Z1, the P type end ground connection of this first voltage-stabiliser tube Z1; The collector electrode of described the 38 NPN triode Q8 connects power supply.

After having voltage to be applied to power end, the path of R1, Q4, Q5, R2 makes circuit start work.The computing formula of Q1 electric current is:

K is Boltzmann constant, and T is kelvin degree, and q is elementary charge.V _TValue (300k) about 25.9mV when normal temperature.A5, A6 are respectively the emitter region area of Q5, Q6.

Q1, Q7, Q9, Q10 form the image current mirror, and the collector current of Q7, Q9, Q10 may be calculated:

A7, A9, A10, A1 are respectively the emitter region area of Q7, Q9, Q10, Q1.The collector current of Q9, Q10 outputs in internal circuit by current-mirror structure, forms internal current source.

Internal source voltage is exported from the Q8 emitter.The base potential of Q8 is the puncture voltage of voltage-stabiliser tube Z1.Its emitter voltage V _REGMay be calculated: V _REG=V _Z1-0.7

in a kind of further preferred embodiment, described the first not gate G1, the second not gate G2, the 3rd not gate G3, the 7th not gate G7, the 9th not gate G9 and the tenth not gate G10 are the not gate with same line structure as shown in Figure 5, described each not gate includes the 21 NPN triode N1, described the 21 NPN triode N1 collector electrode connects described current source output, the base stage of described the 21 NPN triode N1 is the input of described not gate, the grounded emitter of described the 21 NPN triode N1, the output of the very described not gate of current collection of described the 21 NPN triode N1.

When the not gate input received high level signal, N1 was saturated, non-gate output terminal output low level; When the not gate input receives low level signal, N1 cut-off, non-gate output terminal output high level.

in another kind of further preferred embodiment, described each four nor gate G4, the 5th NOR gate G5, the 6th NOR gate G6, the 11 NOR gate G11, the 12 NOR gate G12 and the 13 NOR gate G13 are the NOR gate with same line structure as shown in Figure 6, each NOR gate includes the 22 NPN triode N2 and the 23 NPN triode N3, the equal ground connection of emitter of described the 22 NPN triode N2 and the 23 NPN triode N3, the collector electrode of described the 22 NPN triode N2 and the 23 NPN triode N3 interconnects and as the output of described NOR gate, the collector electrode of described the 22 NPN triode N2 and the 23 NPN triode N3 all connects described current source output, the base stage of described the 22 NPN triode N2 is an input of described NOR gate, the base stage of described the 23 NPN triode N3 is another input of described NOR gate.

As shown in Figure 6, when input 1 or input 2 receive high level signal, NOR gate output output low level; When input 1 or input 2 input signals are low level, NOR gate output output high level.

Two NOR gate connect the rest-set flip-flop that can form as shown in Figure 9 according to certain mode.The input of NOR gate O1 is as input S, and the output of another input ANDORNOTgate O2 connects.The output of O2 is as input R, and another input is connected with the output of O1.The output of O2 is as the output Q of rest-set flip-flop.Represent high level with " 1 ", " 0 " represents low level.The truth table of rest-set flip-flop is as shown in the table:

R	S	Q ⁿ	Q ⁿ⁺¹
				1	0	0	0
0	0	0	0
				0	1	0	1
1	1	0	0
				1	0	1	0
0	0	1	1
				0	1	1	1
1	1	1	0

The truth table of table 1RS trigger

In upper table, Q ⁿRepresent trigger output initial condition, Q ⁿ⁺¹Represent trigger output stable state.

In a kind of further preferred embodiment, described lower pipe driver output unit, as shown in Figure 8, comprise the 8th NPN triode T8, the 9th NPN triode T9, the tenth PNP triode T10, the 11 NPN triode T11, the 12 NPN triode T12, the 13 NPN triode T13, the 6th resistance R 6, the 7th resistance R 7 the 8th resistance R 8 and the 9th resistance R 9; The grounded emitter of described the 8th NPN triode T8, the base stage of the 8th NPN triode T8 connects an end of described the 6th resistance R 6.The other end of the 6th resistance R 6 connects the output of described the 13 NOR gate G13; The grounded emitter of described the 9th NPN triode T9, the base stage of the 9th NPN triode T9 connects an end of described the 7th resistance R 7, the output of described the 13 NOR gate G13 of another termination of the 7th resistance R 7; The collector electrode of described the 8th NPN triode T8 is connected with described current source output, and connects the base stage of described the 12 NPN triode T12; Described the 8th resistance R 8 one ends connect power supply, and the other end of the 8th resistance R 8 connects respectively the base stage of described the tenth PNP triode T10 and the collector electrode of described the 9th NPN triode T9; Described the tenth PNP triode T10 and the 11 NPN triode T11 are connected to the Darlington transistor structure; The emitter of described the tenth PNP triode T10 all is connected with power supply with the collector electrode of the 11 NPN triode T11; The collector electrode of the tenth PNP triode T10 is connected with the base stage of the 11 NPN triode T11; The emitter of the 11 NPN triode T11 connects described lower pipe and drives signal output part; Described the 12 NPN triode T12 and described the 13 NPN triode T13 are connected to the Darlington transistor structure; The collector electrode of described the 12 NPN triode T12 and the 13 NPN triode T13 is connected, and together connects described lower pipe driving signal output part; The emitter of described the 12 NPN triode T12 connects the base stage of described the 13 NPN triode T13 and is connected with an end of described the 9th resistance R 9; The equal ground connection of emitter of the other end of the 9th resistance R 9 and described the 13 NPN triode T13.

When input receives high level signal, T8 and T9 conducting.The T8 conducting makes T12, T13 cut-off.The T9 conducting makes T10, T11 conducting.Lower pipe drives signal output part output high level.When input receives low level signal, T8 and T9 cut-off.The T8 cut-off makes T12, T13 conducting.The T9 cut-off makes T10, T11 cut-off.Lower pipe drives the signal output part output low level.

And described upper pipe driver output unit, as shown in Figure 7, comprise a NPN triode T1, the 2nd NPN triode T2, the 3rd PNP triode T3, the 4th PNP triode T4, the 5th NPN triode T5, the 6th NPN triode T6, the 7th NPN triode T7, the first resistance R 1, the second resistance R 2, the 3rd resistance R 3, the 4th resistance R 4, the 5th resistance R 5, the first diode D1 and the second voltage-stabiliser tube Z2; The grounded emitter of a described NPN triode T1, the base stage of a NPN triode T1 connects an end of described the first resistance R 1, the output of described the 6th NOR gate G6 of another termination of this first resistance R 1; The grounded emitter of described the 2nd NPN triode T2, the base stage of the 2nd NPN triode T2 connects an end of described the second resistance R 2, the output of described the 6th NOR gate G6 of another termination of this second resistance R 2; The collector electrode of a described NPN triode T1 connects described current source output, and connects the P type end of described the first diode D1; The N-type end of the first diode D1 connects the base stage of described the 6th NPN triode T6; The base stage of described the 3rd PNP triode T3 connects the N-type end of described the second voltage-stabiliser tube Z2; The collector electrode of the 3rd PNP triode T3 connects respectively the P type end of described the second voltage-stabiliser tube Z2 and the collector electrode of described the 2nd NPN triode T2; One end of described the 3rd resistance R 3 connects the base stage of described the 3rd PNP triode T3, and the other end of the 3rd resistance R 3 connects the emitter of described the 3rd PNP triode T3; Described the 4th resistance R 4 one ends connect upper pipe and drive the floating power supply end; The other end of described the 4th resistance R 4 connects respectively the base stage of described the 4th PNP triode T4 and the emitter of described the 3rd PNP triode T3; Described the 4th PNP triode T4 and the 5th NPN triode T5 are connected to the Darlington transistor structure; The emitter of described the 4th PNP triode T4 all is connected described upper pipe with the collector electrode of the 5th NPN triode T5 and drives the floating power supply end; The collector electrode of described the 4th PNP triode T4 is connected with the base stage of described the 5th NPN triode T5; The emitter of described the 5th NPN triode T5 connects described upper pipe and drives signal output part; Described the 6th NPN triode T6 and described the 7th NPN triode T7 are connected to the Darlington transistor structure; The collector electrode of described the 6th NPN triode T6 is connected with the collector electrode of described the 7th NPN triode T7, and connects described upper pipe driving signal output part; The emitter of described the 6th NPN triode T6 is connected with the base stage of described the 7th NPN triode T7, and connect an end of described the 5th resistance R 5, the other end of the 5th resistance R 5 be connected the emitter of the 7th NPN triode T7 and all connect upper pipe and drive the floating ground end.

When input receives high level signal, T1 and T2 conducting.The T1 conducting makes T6, T7 cut-off.The T2 conducting makes T4, T5 conducting.Upper pipe drives signal output part output high level.When input receives low level signal, T1 and T2 cut-off.The T1 cut-off makes T6, T7 conducting.The T2 cut-off makes T4, T5 cut-off.Upper pipe drives the signal output part output low level.

In a kind of preferred execution mode, the described integrated circuit structure that is applied to driving power MOSFET half-bridge has eight leaded packages.

In actual applications, in integrated circuit of the present utility model, as shown in Figure 3, the Dead Time function is realized by the circuit that not gate G2, capacitor C 1 and NOR gate G4, G5 connect into.The signal of G1 output is exported to G4 after G2 is anti-phase.According to the isoboles of as shown in Figure 5 not gate, if the output termination capacitor, when input end signal became high level from low level, output end signal should become low level from high level.This moment the N1 saturation conduction, the electric charge on electric capacity can be very fast from the collector electrode bleed off of N1 to ground.When input end signal became low level from high level, output end signal should become high level from low level.N1 cut-off this moment, constant-current source I1 is to capacitor charging, because the charging current of constant-current source is also little, so on electric capacity, voltage need to be through just rising to high level after a while.There is a hysteresis time that is not gate output high level with respect to the input signal trailing edge.

According to above analysis, the input-output wave shape of Dead Time part is seen Figure 10.

Same, the circuit function that G10, capacitor C 2 and NOR gate G11, G12 form is same as described above.

Integrated circuit of the present utility model also has the passage interlock function, guaranteeing when the upper management and control signal input high level processed, and lower pipe driving signal output low level; During the signal input low level processed of management and control instantly, upper pipe drives the low high level of signal output.As shown in Figure 1, this function is realized by not gate G3, G7 and NOR gate G6, G13.

When upper management and control signal input high level processed, G3 exports high level.The output of G3 connects the input of G13, makes the G13 output low level.This moment, it is constant that low level is all kept in the output of G13 no matter lower management and control signal incoming level processed is high or low.Lower pipe drives the signal output low level.

During the signal input low level processed of management and control instantly, G7 exports high level.The output of G7 connects the input of G6, makes the G6 output low level.This moment, it is constant that low level is all kept in the output of G6 no matter upper management and control signal incoming level processed is high or low.Upper pipe drives the signal output low level.

In conjunction with the analysis of Dead Time and passage interlock function, integrated circuit input output waveform of the present utility model as shown in figure 12.

Integrated circuit of the present utility model adopts eight leaded packages, and its typical application drawing is seen Figure 11.The circuit power pin connects the VCC end.Connect a filter capacitor between power pins and ground.Bootstrap diode is connected on power pins and upper pipe drives between the floating power supply pin.Bootstrap capacitor is connected on pipe and drives between floating power supply pin and upper pipe driving floating ground pin.Upper pipe drives the output OUT that floating ground connects the power MOSFET half-bridge simultaneously.Circuit output end connects the grid that connects the power MOSFET half-bridge after a resistance.

When power supply is managed conducting under half-bridge, by bootstrap diode to charging bootstrap capacitor.After under half-bridge, pipe was closed, the electric charge on bootstrap capacitor offered pipe and drives the floating power supply pin, as the power supply of upper pipe driver output part.

In this specification, the utility model is described with reference to its specific embodiment.But, still can make various modifications and conversion obviously and not deviate from spirit and scope of the present utility model.Therefore, specification and accompanying drawing are regarded in an illustrative, rather than a restrictive.

Claims

1. integrated circuit structure that is applied to driving power MOSFET half-bridge, it is characterized in that, described integrated circuit structure comprises power module, upper tube drive circuit module and lower tube drive circuit module, and the input of described upper tube drive circuit module is upper management and control signal input part processed; The input of described lower tube drive circuit module is lower management and control signal input part processed; Described power module comprises current source output and voltage output terminal, and described current source output is connected with voltage output terminal and is connected described upper tube drive circuit module and lower tube drive circuit module.

2. the integrated circuit structure that is applied to driving power MOSFET half-bridge according to claim 1, it is characterized in that, described lower tube drive circuit module comprises lower pipe driver element and lower pipe driver output unit, and described lower management and control signal input part processed sequentially connects described lower pipe by described lower pipe driver element and lower pipe driver output unit and drives signal output part; Described lower pipe driver element comprises: the 7th not gate (G7), the 9th not gate (G9), the tenth not gate (G10), the 11 NOR gate (G11), the 12 NOR gate (G12), the 13 NOR gate (G13) and the second electric capacity (C2), and described lower management and control signal input part processed connects the input of described the 7th not gate (G7); The output of the 7th not gate (G7) is connected with the input of described the 9th not gate (G9); The output of described the 9th not gate (G9) is connected with the input of described the tenth not gate (G10); An input of described the 11 NOR gate (G11) is connected with the output of described the 9th not gate (G9), and another input of the 11 NOR gate (G11) is connected with the output of described the 12 NOR gate (G12); The output of described the tenth not gate (G10) is connected with an end of described the second electric capacity (C2), the other end ground connection of this second electric capacity (C2); An input of described the 12 NOR gate (G12) is connected with the output of described the tenth not gate (G10), and another input of the 12 NOR gate (G12) is connected with the output of described the 11 NOR gate (G11); An output of described the 13 NOR gate (G13) connects the output of described the 12 NOR gate (G12); The output described lower pipe driver output of the connection unit of described the 13 NOR gate (G13).

3. the integrated circuit structure that is applied to driving power MOSFET half-bridge according to claim 2, it is characterized in that, described lower pipe driver output unit comprises the 8th NPN triode (T8), the 9th NPN triode (T9), the tenth PNP triode (T10), the 11 NPN triode (T11), the 12 NPN triode (T12), the 13 NPN triode (T13), the 6th resistance (R6), the 7th resistance (R7) the 8th resistance (R8) and the 9th resistance (R9); The grounded emitter of described the 8th NPN triode (T8), the base stage of the 8th NPN triode (T8) connects an end of described the 6th resistance (R6); The other end of the 6th resistance (R6) connects the output of described the 13 NOR gate (G13); The grounded emitter of described the 9th NPN triode (T9), the base stage of the 9th NPN triode (T9) connects an end of described the 7th resistance (R7), the output of described the 13 NOR gate of another termination (G13) of the 7th resistance (R7); The collector electrode of described the 8th NPN triode (T8) is connected with described current source output, and connects the base stage of described the 12 NPN triode (T12); Described the 8th resistance (R8) end connects power supply, and the other end of the 8th resistance (R8) connects respectively the base stage of described the tenth PNP triode (T10) and the collector electrode of described the 9th NPN triode (T9); Described the tenth PNP triode (T10) and the 11 NPN triode (T11) are connected to the Darlington transistor structure; The emitter of described the tenth PNP triode (T10) all is connected with power supply with the collector electrode of the 11 NPN triode (T11); The collector electrode of the tenth PNP triode (T10) is connected with the base stage of the 11 NPN triode (T11); The emitter of the 11 NPN triode (T11) connects described lower pipe and drives signal output part; Described the 12 NPN triode (T12) is connected to the Darlington transistor structure with described the 13 NPN triode (T13); The collector electrode of described the 12 NPN triode (T12) and the 13 NPN triode (T13) is connected, and together connects described lower pipe driving signal output part; The emitter of described the 12 NPN triode (T12) connects the base stage of described the 13 NPN triode (T13) and is connected with an end of described the 9th resistance (R9); The equal ground connection of emitter of the other end of the 9th resistance (R9) and described the 13 NPN triode (T13).

4. the integrated circuit structure that is applied to driving power MOSFET half-bridge according to claim 2, it is characterized in that, described upper tube drive circuit module comprises pipe driver element and upper pipe driver output unit, and described upper management and control signal input part processed sequentially connects described upper pipe by described upper pipe driver element and upper pipe driver output unit and drives signal output part; Described upper pipe driver element comprises: the first not gate (G1), the second not gate (G2), the 3rd not gate (G3), four nor gate (G4), the 5th NOR gate (G5), the 6th NOR gate (G6) and the first electric capacity (C1); Described upper management and control signal input part processed connects the input of described the first not gate (G1); The output of this first not gate (G1) connects respectively the input of described the second not gate (G2) and the 3rd not gate (G3); An input of described the 5th NOR gate (G5) is connected with the output of described the first not gate (G1), and another input of the 5th NOR gate (G5) is connected with the output of described four nor gate (G4); The output of described the second not gate (G2) is connected with described the first electric capacity (C1), the other end ground connection of this first electric capacity (C1); An input of described four nor gate (G4) is connected with the output of described the second not gate (G2), and another input of this four nor gate (G4) is connected with the output of described the 5th NOR gate (G5); An output of described the 6th NOR gate (G6) connects the output of described four nor gate (G4); The output described upper pipe driver output of the connection unit of described the 6th NOR gate (G6).

5. the integrated circuit structure that is applied to driving power MOSFET half-bridge according to claim 4, it is characterized in that, described upper pipe driver output unit comprises a NPN triode (T1), the 2nd NPN triode (T2), the 3rd PNP triode (T3), the 4th PNP triode (T4), the 5th NPN triode (T5), the 6th NPN triode (T6), the 7th NPN triode (T7), the first resistance (R1), the second resistance (R2), the 3rd resistance (R3), the 4th resistance (R4), the 5th resistance (R5), the first diode (D1) and the second voltage-stabiliser tube (Z2), the grounded emitter of a described NPN triode (T1), the base stage of a NPN triode (T1) connects an end of described the first resistance (R1), the output of described the 6th NOR gate of another termination of this first resistance (R1) (G6), the grounded emitter of described the 2nd NPN triode (T2), the base stage of the 2nd NPN triode (T2) connects an end of described the second resistance (R2), the output of described the 6th NOR gate of another termination of this second resistance (R2) (G6), the collector electrode of a described NPN triode (T1) connects described current source output, and connects the P type end of described the first diode (D1), the N-type end of the first diode (D1) connects the base stage of described the 6th NPN triode (T6), the base stage of described the 3rd PNP triode (T3) connects the N-type end of described the second voltage-stabiliser tube (Z2), the collector electrode of the 3rd PNP triode (T3) connects respectively the P type end of described the second voltage-stabiliser tube (Z2) and the collector electrode of described the 2nd NPN triode (T2), one end of described the 3rd resistance (R3) connects the base stage of described the 3rd PNP triode (T3), and the other end of the 3rd resistance (R3) connects the emitter of described the 3rd PNP triode (T3), described the 4th resistance (R4) end connects upper pipe and drives the floating power supply end, the other end of described the 4th resistance (R4) connects respectively the base stage of described the 4th PNP triode (T4) and the emitter of described the 3rd PNP triode (T3), described the 4th PNP triode (T4) and the 5th NPN triode (T5) are connected to the Darlington transistor structure, the emitter of described the 4th PNP triode (T4) all is connected described upper pipe with the collector electrode of the 5th NPN triode (T5) and drives the floating power supply end, the collector electrode of described the 4th PNP triode (T4) is connected with the base stage of described the 5th NPN triode (T5), the emitter of described the 5th NPN triode (T5) connects described upper pipe and drives signal output part, described the 6th NPN triode (T6) is connected to the Darlington transistor structure with described the 7th NPN triode (T7), the collector electrode of described the 6th NPN triode (T6) is connected with the collector electrode of described the 7th NPN triode (T7), and connects described upper pipe driving signal output part, the emitter of described the 6th NPN triode (T6) is connected with the base stage of described the 7th NPN triode (T7), and connect an end of described the 5th resistance (R5), the other end of the 5th resistance (R5) be connected the emitter of the 7th NPN triode (T7) and all connect upper pipe and drive the floating ground end.

6. the integrated circuit structure that is applied to driving power MOSFET half-bridge according to claim 4, it is characterized in that, another input of described the 13 NOR gate (G13) connects the output of described the 3rd not gate (G3), and another input of described the 6th NOR gate (G6) connects the output of described the 7th not gate (G7).

7. the integrated circuit structure that is applied to driving power MOSFET half-bridge according to claim 4, it is characterized in that, described the first not gate (G1), the second not gate (G2), the 3rd not gate (G3), the 7th not gate (G7), the 9th not gate (G9) and the tenth not gate (G10) not gate for having the same line structure, described each not gate includes the 21 NPN triode (N1), described the 21 NPN triode (N1) collector electrode connects described current source output, the base stage of described the 21 NPN triode (N1) is the input of described not gate, the grounded emitter of described the 21 NPN triode (N1), the output of the very described not gate of current collection of described the 21 NPN triode (N1).

8. the integrated circuit structure that is applied to driving power MOSFET half-bridge according to claim 4, it is characterized in that, described each four nor gate (G4), the 5th NOR gate (G5), the 6th NOR gate (G6), the 11 NOR gate (G11), the 12 NOR gate (G12) and the 13 NOR gate (G13) are for having the NOR gate of same line structure, each NOR gate includes the 22 NPN triode (N2) and the 23 NPN triode (N3), the equal ground connection of emitter of described the 22 NPN triode (N2) and the 23 NPN triode (N3), the collector electrode of described the 22 NPN triode (N2) and the 23 NPN triode (N3) interconnects and as the output of described NOR gate, the collector electrode of described the 22 NPN triode (N2) and the 23 NPN triode (N3) all connects described current source output, the base stage of described the 22 NPN triode (N2) is an input of described NOR gate, the base stage of described the 23 NPN triode (N3) is another input of described NOR gate.

9. the integrated circuit structure that is applied to driving power MOSFET half-bridge according to claim 1, it is characterized in that, described power module comprises the 31 PNP triode (Q1), the 32 PNP triode (Q2), the 33 NPN triode (Q3), the 34 NPN triode (Q4), the 35 NPN triode (Q5), the 36 NPN triode (Q6), the 37 PNP triode (Q7), the 38 NPN triode (Q8), the 39 PNP triode (Q9), the 40 PNP triode (Q10), the 31 resistance (R31), the 32 resistance (R32) and the first voltage-stabiliser tube (Z1), one end of described the 31 resistance (R31) connects power supply, and the other end of the 31 resistance (R31) connects the collector electrode of described the 34 NPN triode (Q4), the collector electrode of described the 34 NPN triode (Q4) and base stage short circuit, and connect the base stage of described the 33 NPN triode (Q3), the emitter of described the 34 NPN triode (Q4) is connected with the collector electrode of the 36 NPN triode (Q6), and connects the base stage of described the 35 NPN triode (Q5), the grounded emitter of described the 36 NPN triode (Q6), the emitter of described the 31 PNP triode (Q1) connects power supply, the collector electrode of described the 31 PNP triode (Q1) connects the collector electrode of described the 33 NPN triode (Q3), and connects the base stage of described the 32 PNP triode (Q2), the emitter of described the 33 NPN triode (Q3) is connected with the collector electrode of described the 35 NPN triode (Q5), and connects the base stage of described the 36 NPN triode (Q6), described the 32 resistance (R32) end connects the emitter of described the 35 NPN triode (Q5), described the 32 resistance (R32) other end ground connection, the emitter of described the 37 PNP triode (Q7), the 39 PNP triode (Q9) and the 40 PNP triode (Q10) all connects power supply, the base stage of described the 37 PNP triode (Q7), the 39 PNP triode (Q9) and the 40 PNP triode (Q10) all is connected with the base stage of described the 31 PNP triode (Q1), the emitter of described the 32 PNP triode (Q2) also connects the base stage of described the 31 PNP triode (Q1), the grounded collector of described the 32 PNP triode (Q2), the collector electrode of described the 37 PNP triode (Q7) is connected with the base stage of described the 38 NPN triode (Q8), and connects the N-type end of described the first voltage-stabiliser tube (Z1), the P type end ground connection of this first voltage-stabiliser tube (Z1), the collector electrode of described the 38 NPN triode (Q8) connects power supply.

10. the described integrated circuit structure that is applied to driving power MOSFET half-bridge of any one according to claim 1 to 9, is characterized in that, the described integrated circuit structure that is applied to driving power MOSFET half-bridge has eight leaded packages.