CN202906838U - High frequency bandwidth amplifier circuit - Google Patents
High frequency bandwidth amplifier circuit Download PDFInfo
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- CN202906838U CN202906838U CN 201220548397 CN201220548397U CN202906838U CN 202906838 U CN202906838 U CN 202906838U CN 201220548397 CN201220548397 CN 201220548397 CN 201220548397 U CN201220548397 U CN 201220548397U CN 202906838 U CN202906838 U CN 202906838U
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- effect transistor
- field effect
- pull amplifier
- push
- high frequency
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Abstract
The utility model discloses a high frequency bandwidth amplifier circuit which comprises a push-pull amplifier, a feedback resistor, a first active inductor and a second active inductor. An input end of the push-pull amplifier is connected with an outer input end, an output end of the push-pull amplifier is connected with an output end port, two ends of the feedback resistor are respectively connected with the outer input end and the output end port, one end of the first active inductor is connected with an outer power source, the other end of the first active inductor is connected with the output end port, one end of the second active inductor is connected on the ground, and the other end of the second active inductor is connected with the output end port. The high frequency bandwidth amplifier circuit is higher in a gain-bandwidth product and smaller in power consumption, and simple in the structure of the push-pull amplifier, small in parasitic capacitance, and low in noise.
Description
Technical field
The utility model relates to integrated circuit fields, relates more specifically to a kind of high frequency bandwidth amplifying circuit.
Background technology
In various signal receivers (radio communication, optical fiber communication, high-speed serial communication), need to further amplify the small-signal that receives, so that subsequent conditioning circuit is to the processing of this signal.More and more come highly along with signal frequency, the loss of signal in the medium transmission process is also increasing.As everyone knows, the bandwidth of the amplifying circuit of the higher needs of frequency of signal is wider, and the loss of signal is higher to need the gain of amplifying circuit larger; Comprehensive this two aspect is so that require more and more higher to the demand of the gain bandwidth product of amplifier.
In existing high frequency bandwidth amplifying circuit, using on the topologically invariant basis of traditional structure, obtain higher gain bandwidth product and then need higher electric current and power consumption, and square being directly proportional of gain bandwidth product and operating current, this method need to provide larger electric current, also need simultaneously larger power consumption, thereby so that this method more and more lose its reliss; In addition, can use undersized amplifier, the parasitic capacitance of amplifier is reduced, to reduce the impact on bandwidth, still the current driving ability of undersized amplifier is also very weak, so that amplifier can not satisfy job requirement.。Along with the demand of high frequency bandwidth amplifying circuit to gain bandwidth product further increases, because the restriction of conventional topologies structure, even electric current increased gain bandwidth product is increased effectively again, thereby make the high frequency bandwidth amplifying circuit be absorbed in the technique bottleneck to the raising of gain bandwidth product.
Therefore, be necessary to provide a kind of improved high frequency bandwidth amplifying circuit to overcome defects.
The utility model content
The purpose of this utility model provides a kind of high frequency bandwidth amplifying circuit, and this high frequency bandwidth amplifying circuit has higher gain bandwidth product, less power consumption, and push-pull amplifier is simple in structure, and parasitic capacitance is little, and noise is low.
For achieving the above object, this is bright to provide a kind of high frequency bandwidth amplifying circuit, it comprises push-pull amplifier, feedback resistance, the first active inductance and the second active inductance, the input of described push-pull amplifier is connected with external input terminals, the output of described push-pull amplifier is connected with output port, the two ends of described feedback resistance are connected with external input terminals and output port respectively, described the first active inductance one end connects external power source, the other end is connected with output port, described the second active inductance one end ground connection, the other end is connected with output port.
Preferably, described push-pull amplifier comprises the first field effect transistor and the second field effect transistor, the grid of described the first field effect transistor is connected with external input terminals with the grid of the second field effect transistor, the source electrode of described the first field effect transistor is connected with external power source, the source ground of described the second field effect transistor, the drain electrode of described the first field effect transistor all is connected with output port with the drain electrode of the second field effect transistor.
Preferably, described the first active inductance comprises the first resistance and the 3rd field effect transistor, the drain electrode of described the 3rd field effect transistor is connected with external power source, and its source electrode is connected with output port, and the two ends of described the first resistance are connected with drain electrode with the grid of the 3rd field effect transistor respectively.
Preferably, described the second active inductance comprises the second resistance and the 4th field effect transistor, and the drain electrode of described the 4th field effect transistor is connected with output port, its source ground, and the two ends of described the second resistance are connected with source electrode with the grid of the 4th field effect transistor respectively.
Compared with prior art, high frequency bandwidth amplifying circuit of the present utility model is owing to the output at push-pull amplifier also is connected with respectively the first active inductance and the second active inductance, and an end of described the first active inductance connects external power source, one end ground connection of described the second active inductance, so that cooperating with the second inductance, described the first inductance provides an extra limit of push-pull amplifier output of can offsetting zero point, the bandwidth of expansion output signal, the gain bandwidth product of raising output signal; And the cooperation of two described active inductances makes, and " output-power supply " occurs in pairs with " output-ground " in the high frequency bandwidth amplifying circuit, so that the output services point of described push-pull amplifier is determined, avoided the problem of push-pull amplifier output services point floatings, and the more output driving of balance can be provided.
By following description also by reference to the accompanying drawings, it is more clear that the utility model will become, and these accompanying drawings are used for explaining embodiment of the present utility model.
Description of drawings
Fig. 1 is the schematic diagram of the utility model high frequency bandwidth amplifying circuit.
Embodiment
With reference now to accompanying drawing, describe embodiment of the present utility model, similar element numbers represents similar element in the accompanying drawing.As mentioned above, the utility model provides a kind of high frequency bandwidth amplifying circuit, and this high frequency bandwidth amplifying circuit has higher gain bandwidth product, less power consumption, and main amplifier is simple in structure, and parasitic capacitance is little, and noise is low.
Please refer to Fig. 1, high frequency bandwidth amplifying circuit of the present utility model comprises push-pull amplifier, feedback resistance Rf, the first active inductance and the second active inductance; The input of described push-pull amplifier is connected with external input terminals IN, and its output is connected with output port OUT, and described push-pull amplifier amplifies the high-frequency signal of external input terminals IN input, so that gain and the bandwidth of the high-frequency signal of output all increase; The two ends of described feedback resistance Rf are connected with external input terminals IN and output port OUT respectively, and described feedback resistance Rf provides negative feedback for described push-pull amplifier, with gain and the bandwidth of the described push-pull amplifier output signal of further increase; Described the first active inductance one end connects external power source VDD, the other end is connected with output port OUT, described the second active inductance one end ground connection, the other end is connected with output port OUT, and described the first active inductance cooperates to offset described push-pull amplifier parasitic capacitance to the impact of the bandwidth of the high-frequency signal after amplifying with the second active inductance.
Particularly, described push-pull amplifier comprises the first field effect transistor M1 and the second field effect transistor M2, the grid of described the first field effect transistor M1 is connected with external input terminals IN with the grid of the second field effect transistor M2, the source electrode of described the first field effect transistor M1 is connected with external power source VDD, the source ground of described the second field effect transistor M2, the drain electrode of described the first field effect transistor M1 all is connected with output port OUT with the drain electrode of the second field effect transistor M2, thereby described push-pull amplifier is exported the high-frequency signal of external input terminals IN input after amplifying by output port OUT; Wherein, in the process that described push-pull amplifier amplifies the high-frequency signal of inputting, because the existence of the parasitic capacitance of described the first field effect transistor M1 and the second field effect transistor M2, so that high-frequency signal is introduced a limit at its transmission channel, the high-frequency signal transfer function is sentenced the 20db/10 octave in this limit and is descended, thereby so that high-frequency signal transfer function Bandwidth Reduction; Understandably, amplifier (that is to say described push-pull amplifier) only has amplification to bandwidth with interior high-frequency signal, the lower amplifier of bandwidth is more weak to the high-frequency signal amplification, and therefore the parasitic capacitance on the described push-pull amplifier can weaken the bandwidth of the high-frequency signal of output to a certain extent; Described feedback resistance Rf is connected across input and the output of described push-pull amplifier, described feedback resistance Rf consists of the negative feedback of described push-pull amplifier, this negative feedback has reduced the load resistance of push-pull amplifier as prime, also reduce simultaneously output load resistance at the corresponding levels, expanded the bandwidth of operation after high-frequency signal is exported, and so that the amplifier gain is relatively constant under various process conditions; In addition, described feedback resistance Rf can realize push-pull amplifier to sampling and the electric current summation (namely electric current being amplified) of voltage, so that whole high frequency bandwidth amplification circuit structure is simple, power consumption is little.
Described the first active inductance comprises the first resistance R 1 and the 3rd field effect transistor M3, the drain electrode of described the 3rd field effect transistor M3 is connected with external power source VDD, its source electrode is connected with output port OUT, the two ends of described the first resistance R 1 are connected with drain electrode with the grid of the 3rd field effect transistor M3 respectively, thereby described the first active inductance consists of an active inductance that is connected across between output port OUT and the external power source VDD; Described the second active inductance is drawn together the second resistance R 2 and the 4th field effect transistor M4, the drain electrode of described the 4th field effect transistor M4 is connected with output port OUT, its source ground, the two ends of described the second resistance R 2 are connected with source electrode with the grid of the 4th field effect transistor M4 respectively, thereby described the second active inductance consists of an active inductance that is connected across between output port OUT and the ground; Thereby cooperating with described the second active inductance, described the first active inductance can provide an extra zero point, the high-frequency signal transfer function is sentenced the 20db/10 octave at zero point and is risen, just compensated the parasitic capacitance of amplifier in the limit of this place's generation, two described active inductances have been expanded bandwidth when keeping large gain, increased gain bandwidth product; Wherein, the generation at described limit and zero point reaches the concrete impact on high-frequency signal, is well known to the skilled person, and is not described in detail at this; Because the inherent characteristic of described push-pull amplifier, described push-pull amplifier is output as drain terminal output (see figure 1), so that the working point of output is uncertain, in the utility model, because two active inductances " output-power supply " in this circuit occur in pairs with " output-ground ", so that the output services point of described push-pull amplifier is definite, has avoided the problem of push-pull amplifier output services point floatings, and the more output driving of balance can be provided.In practical application of the present utility model, the selection of described the first active inductance and the second active inductance will determine according to the design parameter of described push-pull amplifier, with the impact on the high-frequency signal bandwidth of the parasitic capacitance of effectively offsetting described push-pull amplifier.
Abovely in conjunction with most preferred embodiment the utility model is described, but the utility model is not limited to the embodiment of above announcement, and should contains various modification, equivalent combinations of carrying out according to essence of the present utility model.
Claims (4)
1. high frequency bandwidth amplifying circuit, it is characterized in that, comprise push-pull amplifier, feedback resistance, the first active inductance and the second active inductance, the input of described push-pull amplifier is connected with external input terminals, the output of described push-pull amplifier is connected with output port, the two ends of described feedback resistance are connected with external input terminals and output port respectively, described the first active inductance one end connects external power source, the other end is connected with output port, described the second active inductance one end ground connection, the other end is connected with output port.
2. high frequency bandwidth amplifying circuit as claimed in claim 1, it is characterized in that, described push-pull amplifier comprises the first field effect transistor and the second field effect transistor, the grid of described the first field effect transistor is connected with external input terminals with the grid of the second field effect transistor, the source electrode of described the first field effect transistor is connected with external power source, the source ground of described the second field effect transistor, the drain electrode of described the first field effect transistor all is connected with output port with the drain electrode of the second field effect transistor.
3. high frequency bandwidth amplifying circuit as claimed in claim 2, it is characterized in that, described the first active inductance comprises the first resistance and the 3rd field effect transistor, the drain electrode of described the 3rd field effect transistor is connected with external power source, its source electrode is connected with output port, and the two ends of described the first resistance are connected with drain electrode with the grid of the 3rd field effect transistor respectively.
4. high frequency bandwidth amplifying circuit as claimed in claim 2, it is characterized in that, described the second active inductance comprises the second resistance and the 4th field effect transistor, the drain electrode of described the 4th field effect transistor is connected with output port, its source ground, the two ends of described the second resistance are connected with source electrode with the grid of the 4th field effect transistor respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220548397 CN202906838U (en) | 2012-10-24 | 2012-10-24 | High frequency bandwidth amplifier circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220548397 CN202906838U (en) | 2012-10-24 | 2012-10-24 | High frequency bandwidth amplifier circuit |
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| Publication Number | Publication Date |
|---|---|
| CN202906838U true CN202906838U (en) | 2013-04-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220548397 Expired - Fee Related CN202906838U (en) | 2012-10-24 | 2012-10-24 | High frequency bandwidth amplifier circuit |
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| CN (1) | CN202906838U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102882476A (en) * | 2012-10-24 | 2013-01-16 | 四川和芯微电子股份有限公司 | High-bandwidth amplifying circuit |
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2012
- 2012-10-24 CN CN 201220548397 patent/CN202906838U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102882476A (en) * | 2012-10-24 | 2013-01-16 | 四川和芯微电子股份有限公司 | High-bandwidth amplifying circuit |
| CN102882476B (en) * | 2012-10-24 | 2015-07-08 | 四川和芯微电子股份有限公司 | High-bandwidth amplifying circuit |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP02 | Change in the address of a patent holder |
Address after: 610041 Sichuan city of Chengdu province high tech Zone Kyrgyzstan Road 33 block A No. 9 Patentee after: IPGoal Microelectronics (Sichuan) Co., Ltd. Address before: 402 room 7, building 610041, incubator Park, hi tech Zone, Sichuan, Chengdu Patentee before: IPGoal Microelectronics (Sichuan) Co., Ltd. |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130424 Termination date: 20151024 |
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| EXPY | Termination of patent right or utility model |