CN202855792U - 覆晶式的发光二极管 - Google Patents

覆晶式的发光二极管 Download PDF

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Publication number
CN202855792U
CN202855792U CN2012205514281U CN201220551428U CN202855792U CN 202855792 U CN202855792 U CN 202855792U CN 2012205514281 U CN2012205514281 U CN 2012205514281U CN 201220551428 U CN201220551428 U CN 201220551428U CN 202855792 U CN202855792 U CN 202855792U
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CN
China
Prior art keywords
semiconductor layer
electrical
conductive part
layer
ohmic conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2012205514281U
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English (en)
Chinese (zh)
Inventor
杜全成
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RGB Consulting Co Ltd
Original Assignee
RGB Consulting Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RGB Consulting Co Ltd filed Critical RGB Consulting Co Ltd
Application granted granted Critical
Publication of CN202855792U publication Critical patent/CN202855792U/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer

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  • Led Device Packages (AREA)
  • Led Devices (AREA)
CN2012205514281U 2011-10-28 2012-10-25 覆晶式的发光二极管 Expired - Fee Related CN202855792U (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW100220330U TWM436224U (enExample) 2011-10-28 2011-10-28
TW100220330 2011-10-28

Publications (1)

Publication Number Publication Date
CN202855792U true CN202855792U (zh) 2013-04-03

Family

ID=47048696

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2012205514281U Expired - Fee Related CN202855792U (zh) 2011-10-28 2012-10-25 覆晶式的发光二极管

Country Status (3)

Country Link
US (2) US8823043B2 (enExample)
CN (1) CN202855792U (enExample)
TW (1) TWM436224U (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113853689A (zh) * 2019-05-20 2021-12-28 欧司朗光电半导体有限公司 光电子半导体芯片

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN203721756U (zh) * 2014-02-25 2014-07-16 深圳市兆明芯科技控股有限公司 覆晶式led芯片
CN104681684A (zh) * 2014-12-30 2015-06-03 深圳市华星光电技术有限公司 一种发光器件及发光器件封装
TWI666792B (zh) * 2017-09-27 2019-07-21 致伸科技股份有限公司 光源模組以及光源模組之製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW521445B (en) * 2002-02-01 2003-02-21 United Epitaxy Co Ltd LED having composite upper electrode
TWI312582B (en) * 2003-07-24 2009-07-21 Epistar Corporatio Led device, flip-chip led package and light reflecting structure
EP1686629B1 (en) * 2003-11-19 2018-12-26 Nichia Corporation Nitride semiconductor light emitting diode and method for manufacturing the same
US7033949B2 (en) * 2003-12-29 2006-04-25 Formosa Epitaxy Incorporation Structure and manufacturing method for nitride-based light-emitting diodes
KR100601945B1 (ko) * 2004-03-10 2006-07-14 삼성전자주식회사 탑에미트형 질화물계 발광소자 및 그 제조방법
US20090001402A1 (en) * 2006-03-22 2009-01-01 Rohm Co., Ltd. Semiconductor element and method of making the same
TWI331816B (en) * 2007-04-03 2010-10-11 Advanced Optoelectronic Tech Semiconductor light-emitting device
US7985970B2 (en) * 2009-04-06 2011-07-26 Cree, Inc. High voltage low current surface-emitting LED
KR100999739B1 (ko) * 2008-04-02 2010-12-08 엘지이노텍 주식회사 발광소자 및 그 제조방법
US8017963B2 (en) * 2008-12-08 2011-09-13 Cree, Inc. Light emitting diode with a dielectric mirror having a lateral configuration
JP2011119519A (ja) * 2009-12-04 2011-06-16 Showa Denko Kk 半導体発光素子及び半導体発光装置
KR100993074B1 (ko) * 2009-12-29 2010-11-08 엘지이노텍 주식회사 발광소자, 발광소자의 제조방법 및 발광소자 패키지
TWI416765B (zh) * 2011-01-17 2013-11-21 Light emitting diodes
US9728676B2 (en) * 2011-06-24 2017-08-08 Cree, Inc. High voltage monolithic LED chip

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113853689A (zh) * 2019-05-20 2021-12-28 欧司朗光电半导体有限公司 光电子半导体芯片
US12155023B2 (en) 2019-05-20 2024-11-26 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip
CN113853689B (zh) * 2019-05-20 2025-02-07 欧司朗光电半导体有限公司 光电子半导体芯片

Also Published As

Publication number Publication date
TWM436224U (enExample) 2012-08-21
US20140327033A1 (en) 2014-11-06
US8969907B2 (en) 2015-03-03
US20130105844A1 (en) 2013-05-02
US8823043B2 (en) 2014-09-02

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C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20130403

Termination date: 20151025

EXPY Termination of patent right or utility model