CN202786416U - 制备热解氮化硼制品用的具有相变保温层的气相沉积炉 - Google Patents
制备热解氮化硼制品用的具有相变保温层的气相沉积炉 Download PDFInfo
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CN 201220429197 CN202786416U (zh) | 2012-08-27 | 2012-08-27 | 制备热解氮化硼制品用的具有相变保温层的气相沉积炉 |
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Cited By (1)
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CN102796995A (zh) * | 2012-08-27 | 2012-11-28 | 北京博宇半导体工艺器皿技术有限公司 | 制备热解氮化硼制品的气相沉积炉及方法 |
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CN102796995A (zh) * | 2012-08-27 | 2012-11-28 | 北京博宇半导体工艺器皿技术有限公司 | 制备热解氮化硼制品的气相沉积炉及方法 |
CN102796995B (zh) * | 2012-08-27 | 2015-01-28 | 北京博宇半导体工艺器皿技术有限公司 | 制备热解氮化硼制品的气相沉积炉及方法 |
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Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20190604 Address after: 101101 No. 108 Binhe Road, Tongzhou District, Beijing Co-patentee after: Bo Yu (Chaoyang) semiconductor technology Co., Ltd. Patentee after: Beijing Boyu Semiconductor Process Containers Technology Co., Ltd. Co-patentee after: Bo Yu (Tianjin) semiconductor materials Co., Ltd. Address before: 101101 No. 108 Binhe Road, Tongzhou District, Beijing Patentee before: Beijing Boyu Semiconductor Process Containers Technology Co., Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130313 Termination date: 20200827 |