CN202721191U - 5730LED (light emitting diode) patch packing structure - Google Patents
5730LED (light emitting diode) patch packing structure Download PDFInfo
- Publication number
- CN202721191U CN202721191U CN2012203098864U CN201220309886U CN202721191U CN 202721191 U CN202721191 U CN 202721191U CN 2012203098864 U CN2012203098864 U CN 2012203098864U CN 201220309886 U CN201220309886 U CN 201220309886U CN 202721191 U CN202721191 U CN 202721191U
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- CN
- China
- Prior art keywords
- 5730led
- chip
- silver coating
- ppa
- heat sink
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- Led Device Packages (AREA)
Abstract
The utility model relates to an LED (light emitting diode) packing structure, and particularly relates to a 5730LED patch packing structure which comprises a 5730LED chip, a bracket carrying the 5730LED chip, and a packing body covering the 5730LED chip and partial bracket. The bracket is provided with a cup bowl, a positive conductive pin, a negative conductive pin and a PPA interlayer, wherein the cup bowl is used for arranging the 5730LED chip, and the positive conductive pin and the negative conductive pin lead a positive electrode and a negative electrode of the 5730LED chip out respectively through gold wires. The cup bowl is internally provided with a metal heat sink, a silver coating and the 5730LED chip, wherein the metal heat sink is positioned below the silver coating and matched with the silver coating in structure, the 5730LED chip is positioned above the silver coating and matched with the silver coating in structure, and the silver coating is connected with the positive electrode and the negative electrode of the 5730LED chip. The 5730LED chip is fixedly arranged in the cup bowl through cooperation of the metal heat sink, the silver coating and the PPA interlayer. The silver coating is in a bright-mirror-plane-like state, and the thickness of the silver coating is in the range of 100-120mil.
Description
Technical field
The utility model relates to the encapsulating structure of LED, is specifically related to the encapsulating structure of 5730LED paster.
Background technology
Surface-mounted LED light source has widely at lighting field to be used, consider the specification requirements such as production technology, cost, optical property, the led light source of paster packaged type is adopted in increasing design, the power package structure was in recent years in order to reduce cost and to improve luminous flux during LED used, and a kind of packaged type of taking.
5730LED paster light source is same with the led light source of other all packaged types, all needs to solve luminous flux, reliability and cost three's problem: light efficiency is the ratio of luminous flux and the specific electric energy power of its consumption; Reliability is often determined by light source heat radiation performance and packaging technology; And cost is mainly reflected in raw material selection aspect, and mutual containing occurs this three.Under different demands, may need outstanding effect of optimization aspect certain.Increase the thickness (traditional silver coating thickness is 80-100mil) of silver coating, can effectively improve the optical efficiency of getting of led chip, what traditional silver coating used is minute surface mist silver, is the minute surface silver lustre and this silver coating is selected, fully reflection ray.Such as, in the situation of cost and reliability maintenance, realizing high light flux, such subject under discussion seems in a large amount of led light source productions and is even more important.As commodity, realize the Properties Control under its cost, be a kind of inevitable demand.So how when keeping preferably cost and reliability, power 5730LED paster light source is realized high light flux in the employing, is an inevitable demand of this class paster LED encapsulating structure design.
In the packaged type of 5730LED paster, the bonding wire bank is higher in the market, and gold thread (wire) uses length longer, and what silver coating used is minute surface mist silver, and the plastic rubber material that rack shell uses is generally PPA114, and optical efficiency is low, cost is high so that get.
The utility model content
Technical problem to be solved in the utility model is, a kind of 5730LED paster encapsulating structure is provided, by improving the packaged type of existing 5730LED paster, that is: rack shell uses the PPA-TA112 plastic rubber material, what silver coating used is the minute surface silver lustre, simultaneously bonding wire height and bonding wire radian are control effectively, and then improve luminous flux; In addition, adopt vertical radiating mode to improve the reliability of 5730LED paster, and then reach the purpose that reduces cost.
In order to solve the problems of the technologies described above, a kind of 5730LED paster of the utility model encapsulating structure comprises 5730LED chip, the support of carrying 5730LED chip and the packaging body that coats described 5730LED chip and part support.Positive conductive feet and negative conductive feet and PPA interlayer that described support is provided with the cup of placing the 5730LED chip, the both positive and negative polarity of 5730LED chip is drawn by gold thread.Be provided with metal heat sink, silver coating and 5730LED chip in the described cup, described metal heat sink is positioned under the silver coating and with it and structurally matches, described 5730LED chip is positioned on the silver coating and with it and structurally matches, described silver coating is connected with the both positive and negative polarity of 5730LED chip, cooperation by metal heat sink, silver coating and PPA interlayer is fixedly installed on the 5730LED chip in the cup.
Further, the shell of described support and PPA interlayer adopt the TA112 plastic cement to make.The altitude range of described PPA interlayer is preferably 0.08-0.10mm.The PPA interlayer that adopts the TA112 plastic cement to make has fully improved the optical efficiency of getting of chip, and then has improved the light extraction efficiency of whole encapsulating structure.In addition, the TA112 plastic cement is higher than traditional PPA114 heatproof.
Further, described silver coating has the standing part that combines with the bottom of 5730LED chip, and its thickness range is 100-120 ㏕.This silver coating is to adopt the electroless plating method to be made into the minute surface silver lustre of minute surface light shape, thereby the light of 5730LED chip is fully reflected, and has improved the light efficiency of whole encapsulating structure.
Further, described metal heat sink adopts the C194 copper to become, and has the bottom surface that matches with silver coating.This metal heat sink effectively raises the speed that the heat of 5730LED chip is vertically exported to the lower surface of substrate, is conducive to the quick heat radiating of whole 5730LED chip structure, thereby has promoted the reliability of 5730LED encapsulation.This encapsulating structure can be brought up to 180ma with the through current of 5730LED chip, thereby realizes the LED packaging technology of high light flux, high stability.
The utility model has adopted said structure, compared with prior art, has the following advantages:
1. the minute surface silver lustre of the silver coating light that will be derived from the 5730LED chip fully reflects; And increased the thickness of silver coating, thus improved whole encapsulating structure get the light light efficiency;
2. metal heat sink can vertically export to the heat of 5730LED chip the lower surface of substrate, is beneficial to the heat radiation of whole 5730LED chip, thereby has promoted reliability, realizes high light flux, high reliability LED packaging technology;
3. by to the distance of 5730LED chip and PPA interlayer and the control of position, can effectively improve and get optical efficiency;
4. the PPA interlayer made of TA112 plastic cement has improved the light light extraction efficiency of chip, and the light that is derived from the 5730LED chip is fully reflected;
5. control by bonding wire height and bonding wire radian to gold thread, can reduce the consumption of gold thread, and then reach the purpose that reduces cost.
Description of drawings
Fig. 1 is the vertical view of embodiment of the present utility model;
Fig. 2 is the schematic diagram of embodiment of the present utility model.
Embodiment
Now with embodiment the utility model is further specified by reference to the accompanying drawings.
As preferred embodiment of the utility model, as depicted in figs. 1 and 2, a kind of 5730LED paster encapsulating structure comprises 5730LED chip 1, the support 2 of carrying 5730LED chip 1 and the packaging body that coats 5730LED chip 1 and part support.Positive and negative conductive feet and PPA interlayer 7 that support 2 is provided with the cup of placing 5730LED chip 1, the both positive and negative polarity of 5730LED chip 1 is drawn by gold thread 12.
Be provided with metal heat sink 5, silver coating 6 and 5730LED chip 1 in the cup, metal heat sink 5 is positioned under the silver coating 6 and with it and structurally matches, 5730LED chip 1 is positioned on the silver coating 6 and with it and structurally matches, silver coating 6 is connected with the both positive and negative polarity of 5730LED chip 1, cooperation by metal heat sink 5, silver coating 6 and PPA interlayer 7 is fixedly installed on 5730LED chip 1 in the cup.
The shell of support 2 and PPA interlayer 7 adopt the TA112 plastic cement to make.The die bond position of 5730LED chip 1 is positioned at a side of PPA interlayer 7.Preferably, 5730LED chip 1 is 0.05-0.10mm with the distance at the edge of PPA interlayer 7.The PPA interlayer 7 that adopts the TA112 plastic cement to make runs through support 2 inside, fully isolates the positive and negative electrode of 5730LED chip, has improved the optical efficiency of getting of chip, and then has improved the light extraction efficiency of whole encapsulating structure.In addition, the TA112 plastic cement is higher than traditional PPA114 heatproof.
Although specifically show and introduced the utility model in conjunction with preferred embodiment; but the those skilled in the art should be understood that; within not breaking away from the spirit and scope of the present utility model that appended claims limits; can make a variety of changes the utility model in the form and details, be protection range of the present utility model.
Claims (4)
1. a 5730LED paster encapsulating structure is characterized in that: comprise
The support of 5730LED chip, carrying 5730LED chip and the packaging body that coats described 5730LED chip and part support;
Positive conductive feet and negative conductive feet and PPA interlayer that described support is provided with the cup of placing the 5730LED chip, the both positive and negative polarity of 5730LED chip is drawn by gold thread;
Be provided with metal heat sink, silver coating and 5730LED chip in the described cup, described metal heat sink is positioned under the silver coating and with it and structurally matches, described 5730LED chip is positioned on the silver coating and with it and structurally matches, described silver coating is connected with the both positive and negative polarity of 5730LED chip, by the cooperation of metal heat sink, silver coating and PPA interlayer, the 5730LED chip is fixedly installed in the described cup;
Described silver coating is the silver coating that is minute surface light shape, and its thickness range is 100-120 ㏕.
2. 5730LED paster encapsulating structure according to claim 1 is characterized in that: the shell of described support and PPA interlayer adopt the TA112 plastic rubber material to make.
3. 5730LED paster encapsulating structure according to claim 1, it is characterized in that: the altitude range of described PPA interlayer is 0.08-0.10mm.
4. 5730LED paster encapsulating structure according to claim 1 is characterized in that: described metal heat sink employing C194 copper one-tenth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012203098864U CN202721191U (en) | 2012-06-29 | 2012-06-29 | 5730LED (light emitting diode) patch packing structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012203098864U CN202721191U (en) | 2012-06-29 | 2012-06-29 | 5730LED (light emitting diode) patch packing structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202721191U true CN202721191U (en) | 2013-02-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012203098864U Expired - Fee Related CN202721191U (en) | 2012-06-29 | 2012-06-29 | 5730LED (light emitting diode) patch packing structure |
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| Country | Link |
|---|---|
| CN (1) | CN202721191U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106093141A (en) * | 2016-07-29 | 2016-11-09 | 广州奥松电子有限公司 | A kind of humistor based on 5730 encapsulation |
-
2012
- 2012-06-29 CN CN2012203098864U patent/CN202721191U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106093141A (en) * | 2016-07-29 | 2016-11-09 | 广州奥松电子有限公司 | A kind of humistor based on 5730 encapsulation |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: 5730LED (light emitting diode) patch packing structure Effective date of registration: 20150923 Granted publication date: 20130206 Pledgee: China Co truction Bank Corp Xiamen branch Pledgor: Xiamen Colorful Optoelectronics Technology Co.,Ltd. Registration number: 2015350000074 |
|
| PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130206 Termination date: 20190629 |