CN202695444U - Anti-static discharge device - Google Patents
Anti-static discharge device Download PDFInfo
- Publication number
- CN202695444U CN202695444U CN 201220333972 CN201220333972U CN202695444U CN 202695444 U CN202695444 U CN 202695444U CN 201220333972 CN201220333972 CN 201220333972 CN 201220333972 U CN201220333972 U CN 201220333972U CN 202695444 U CN202695444 U CN 202695444U
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- Prior art keywords
- discharge tube
- discharge device
- static
- district
- utility
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Abstract
The utility model relates to an anti-static discharge device which comprises a body P-N junction semiconductor discharge tube. N+ areas are photo-etched in two P areas of the body P-N junction semiconductor discharge tube respectively. The anti-static discharge device has the advantages that firstly, the number of devices and the mounting size are decreased, originally, a discharge tube and a diode are needed to achieve an anti-static effect, and now only one anti-static discharge tube is needed to achieve the anti-static effect; secondly, power consumption of an electronic product is reduced by means of integrated design; and thirdly, the cost of the electronic product is reduced.
Description
Technical field
The utility model relates to a kind of integrated device, relates in particular to a kind of anti-electrostatic-discharge device.
Background technology
The solid discharge device claims again semiconductor discharge tube, and a kind of the knot by multilayer P-N consists of, and has the solid state device of anti-lightning strike or overvoltage protection.In today that electronic product and equipment are quite popularized, to use terminal anti-lightning strike/overvoltage (overcurrent) protection become very important.
Since last century Mo; to the initial stage in this century; various electronic products and equipment are successively with piezo-resistance, gas discharge tube, TVS(semiconductor Transient Suppression Diode), solid discharging tube etc., as the Primary Component of lightning protection/anti-overvoltage protection, and be widely used.Wherein first three plant device use in or because of response speed slow (ms level) or poor or do not have the problem such as restore funcitons after occuring because of protection because of conveyance capacity, that fails all the time to do is very perfect.But solid discharging tube has obvious advantage in these areas, and especially its outstanding responding ability can reach μ s level.As shown in Figure 1, be the structural representation of a kind of solid discharge tube device in the prior art;
Through technical development about ten years, the solid discharge device has in use also exposed some problems.Especially junction capacitance less in the discharge tube of multilayer P-N knot formation just can be found out from formula " voltage V=Q electric weight/C electric capacity ".In each discharge process, always there is certain electric energy to be stored in the junction capacitance, cause the secondary discharge after the discharge or claim electrostatic effect, its residual voltage still can be up to 4KV～5KV, and the discharge time of residual voltage is longer, can cause the secondary infringement to protected circuit.
Industry is to this improvement technical measures, and the way with external bypass diode solves the above problems usually, as shown in Figure 2.
This structure has reached certain effect in specific implementation process, but under the trend of integrated scale, the Volume design of various electric equipment products is more and more less, and it is also more and more lower to consume energy.Therefore a lot of electrical equipment factories constantly propose various improvement demands to device manufacturing enterprise, and the utility model is exactly to arise at the historic moment in this case.
Summary of the invention
The utility model technical issues that need to address are on the basis of former " discharge device ", and a kind of " anti-electrostatic-discharge device " is provided, and are intended to solve the above problems.
In order to solve the problems of the technologies described above, the utility model is achieved through the following technical solutions, and is about to directly integrated being manufactured on the former discharge tube chip of bypass diode, creates a kind of antistatic puncture that has, and the discharge device of release channel is provided to residual voltage.
The utility model comprises: body P-N pn junction p n discharge tube; In two P districts of described body P-N pn junction p n discharge tube, also distinguish photoetching N
+The district.
Compared with prior art, the beneficial effects of the utility model are: the first, simplified number of devices and installation volume, originally to reach anti-static effect, need two devices, namely discharge tube and diode are each one, only need now an anti-electrostatic-discharge pipe to achieve the goal; The second, owing to adopted Integrated design, reduced the power consumption of electronic product; The 3rd, reduced the cost of electronic product.
Description of drawings
A kind of structural representation of solid discharge tube device in Fig. 1 prior art.
In Fig. 2 prior art by taking a plug-in diode to reach the structural representation of release electrostatic.
Fig. 3 is the utility model structural representation.
Embodiment
Below in conjunction with accompanying drawing and embodiment the utility model is described in further detail:
As seen from Figure 3: the utility model comprises: body P-N pn junction p n discharge tube; In two P districts of described body P-N pn junction p n discharge tube, also distinguish photoetching N
+The district.
The utility model has increased direct integrated being manufactured on the former discharge tube chip of bypass diode newly two N
+The district has so just produced two new PN junctions, by the effect of these two knots, so that static is released, protective effect has been played in the load of circuit back.
Making step of the present utility model is following (to be about to bypass diode directly among the integrated figure that is manufactured on former discharge tube, leakage path to be provided for remaining voltage; Wherein second and third, four steps are to increase by two two N
+Distinguish concrete implementing process method):
1, oxidation: at the silica membrane of silicon chip surface growth one deck densification, as the masking film in the diffusion process or passivating film;
2, photoetching N
+District: duplicate and the chemical corrosion combined technology by image, carve and the reticle respective graphical at silicon dioxide, in order to carry out localization diffusion or Impurity injection;
3, N
+Make in the district: to finishing photoetching N
+The silicon chip in district carries out N
+Processing procedure;
4, annealing: to finishing N
+N in the silicon chip of processing procedure
+Ion rearranges;
5, photoetching P district: duplicate and the chemical corrosion combined technology by image, carve and the reticle respective graphical at silicon dioxide, in order to carry out localization diffusion or injection;
6, P makes in the district: to finishing N
+The P area that the processing procedure silicon chip forms after photoetching by diffuseing to form the P district of certain concentration and junction depth, and has the processing procedure of certain avalanche breakdown voltage;
7, photoetching N
++District: duplicate and the chemical corrosion combined technology by image, carve and the reticle respective graphical at silicon dioxide, in order to carry out localization diffusion or injection;
8, N
++Make in the district: the zone that in P district process zone, after photoetching, forms, by diffuseing to form the n-quadrant than higher concentration;
9, photoetching electrode district: duplicate and the chemical corrosion combined technology by image, carve and the reticle respective graphical at silicon dioxide, draw in order to carry out electrode;
10, electrode metal: the electrode zone that photoetching is formed passes through the evaporation of metal multiple layer metal, forms good ohmic contact, forms electrode and draw behind sintering;
11, ohm is drawn and is encapsulated: utilize wire that the electrode in the chip is drawn, and chip is sealed.
Claims (1)
1. an anti-electrostatic-discharge device comprises: body P-N pn junction p n discharge tube; It is characterized in that: in two P districts of described body P-N pn junction p n discharge tube, also distinguish photoetching N
+The district.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220333972 CN202695444U (en) | 2012-07-10 | 2012-07-10 | Anti-static discharge device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220333972 CN202695444U (en) | 2012-07-10 | 2012-07-10 | Anti-static discharge device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202695444U true CN202695444U (en) | 2013-01-23 |
Family
ID=47551020
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220333972 Expired - Fee Related CN202695444U (en) | 2012-07-10 | 2012-07-10 | Anti-static discharge device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202695444U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108370154A (en) * | 2015-08-13 | 2018-08-03 | 力特半导体（无锡）有限公司 | Overvoltage protection |
-
2012
- 2012-07-10 CN CN 201220333972 patent/CN202695444U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108370154A (en) * | 2015-08-13 | 2018-08-03 | 力特半导体（无锡）有限公司 | Overvoltage protection |
| US10714241B2 (en) | 2015-08-13 | 2020-07-14 | Littelfuse Semiconductor (Wuxi) Co., Ltd. | Overvoltage protection device |
| US10714240B2 (en) | 2015-08-13 | 2020-07-14 | Littlefuse Semiconductor (Wuxi) Co., Ltd. | Overvoltage protection device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130123 Termination date: 20130710 |