CN206401295U - A kind of low low residual voltage transient voltage suppressor diode device of appearance - Google Patents
A kind of low low residual voltage transient voltage suppressor diode device of appearance Download PDFInfo
- Publication number
- CN206401295U CN206401295U CN201720037772.1U CN201720037772U CN206401295U CN 206401295 U CN206401295 U CN 206401295U CN 201720037772 U CN201720037772 U CN 201720037772U CN 206401295 U CN206401295 U CN 206401295U
- Authority
- CN
- China
- Prior art keywords
- low
- appearance
- residual voltage
- diode device
- suppressor diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
The utility model discloses the low low residual voltage transient voltage suppressor diode device of appearance of one kind, the low low residual voltage transient voltage suppressor diode device of appearance includes ohmic positive electrode contact zone, the N set gradually from bottom to top+Substrate zone, N‑Epitaxial layer, P bases, P+Trigger region, N+Launch site, ohm negative electrode contact zone, the P+The trigger region of type is located at P‑Base top, the N+Injection region is located at P+Inside trigger region and both sides.Traditional TVS voltage suppression diodes device architecture is improved to the new structure that a horizontal snowslide TVS diode is combined with a vertical bipolar transistors by the utility model, under identical condition of work, it will be apparent that reduce the surge residual voltage and parasitic capacitance of TVS device.
Description
Technical field
The utility model is related to microelectronics technology, and in particular to a kind of low low residual voltage transient voltage suppressor diode of appearance
Device.
Background technology
TVS（Transient Voltage Suppressor）, i.e. Transient Voltage Suppressor is a kind of to be used to absorb ESD
Energy, the solid-state element for protecting system to be damaged from ESD/Surge.It is typically employed in by the prime of protection load, protects voltage
Slightly above by the rated voltage of protection load.Nowadays over-voltage protector has been widely applied to industry control, security protection interface, communication etc.
Field.With IC development, the requirement to this kind of protection device is increasingly strict, and the residual voltage of wherein TVS pipe is increasingly becoming one
More crucial index, because the diminution of process make it that the operating voltage and voltage endurance capability of integrated circuit are more and more weaker,
Many master control IC are burned because prime protection device residual voltage is too high, and low residual voltage can then make product when bearing lightning surge
There are fast response speed and the protective capability strong to rear class chip.
For the system of 5V operating voltages, the operation voltage of protection device is general between 6.5-8V, and for Ethernet
Main control chip is most of at present all to be made using below 90nm techniques, and voltage endurance capability has been reduced to 8V or so, also just says either
Surge type or ESD type protection devices, will make it play protection well between 6.5V-8V and use, its motional impedance is non-
It is often low to meet, and most low capacitor elements at present are difficult to accomplish.
The avalanche breakdown TVS diode of traditional reverse bias, with the quick response time, its output characteristics does not turn
Characteristic is rolled over, manufacture craft is simple.However, under high current, because the lightly doped district and avalanche diode of its higher electric resistivity lack
Few conductivity modulation effect, causes its residual voltage higher, is unfavorable for application.
Due to above reason, how the TVS device for developing the low residual voltage of low electric capacity using new device structure turns into ability
The current urgent problem to be solved of field technique personnel.
The content of the invention
Technical problem to be solved in the utility model is to provide a kind of low low residual voltage transient voltage suppressor diode device of appearance
Part, so that the surge residual voltage and parasitic capacitance of TVS device in the operating condition can be more obviously reduced.
In order to solve the above-mentioned technical problem, the technical scheme that the utility model is used is：A kind of low low residual voltage of appearance is provided
Transient voltage suppressor diode device, including set gradually from bottom to top ohmic positive electrode contact zone, N+Substrate zone, N-Extension
Layer, P bases, P+Trigger region, N+Injection region, ohm negative electrode contact zone, the P+The trigger region of type is located at P bases top, described
N+Injection region is located at P+Inside trigger region and both sides.
It is structurally characterized in that and traditional TVS voltage suppression diodes device architecture is modified to a horizontal snowslide TVS diode
The new structure combined with a vertical bipolar transistors, under low current, horizontal TVS diode provides quickly response triggering
And current drain path；Under high current, longitudinal npn bipolar transistor turns on and provides the path leakage current of a low-resistance,
Under identical condition of work, it will be apparent that reduce the surge residual voltage and parasitic capacitance of TVS device.
On the basis of such scheme, the N+The phosphonium ion doping concentration of substrate zone is 1 × 1018~1×1020cm-3。
On the basis of such scheme, the N-The thickness of epitaxial layer is 5 ~ 15 μm, and its phosphonium ion doping concentration is 1 × 1015~
1×1017cm-3。
On the basis of such scheme, the thickness of the P bases is 2 ~ 5 μm, and its boron ion doping concentration is 1 × 1015~1×
1017cm-3。
On the basis of such scheme, the P+The thickness of trigger region is 0.5 ~ 2 μm, and its boron ion doping concentration is 1 × 1017
~1×1020cm-3。
On the basis of such scheme, the N+The thickness of injection region is 0.5 ~ 2 μm, and its phosphonium ion doping concentration is 1 × 1017
~1×1020cm-3。
The utility model also provides the low manufacture method for holding low residual voltage transient voltage suppressor diode device, including with
Lower step：
Firstth, a piece of N+N is taken-The silicon epitaxial wafer of type is cleaned as print to it, to remove surface contaminant；
Secondth, coat one layer of photoresist on print surface and carry out photoetching, window is formed at middle part, using photoresist to shelter
Layer carries out ion implanting, and boron ion is injected in the region, forms P bases；
3rd, photoresist is removed, and carries out the annealing of P bases；
4th, coat one layer of photoresist again on print surface and carry out photoetching, window is formed with position in P bases, with
Photoresist is that masking layer carries out ion implanting, injects boron ion in the region, forms P+Trigger region；
5th, photoresist is removed, and carries out P+Trigger region is annealed；
6th, coat one layer of photoresist again on print surface and carry out photoetching, middle part and left and right sides shape in P bases
Into window, ion implanting is carried out by masking layer of photoresist, phosphonium ion is injected in the region, N is formed+Injection region；
7th, except photoresist, and N is carried out+Anneal injection region；
8th, print surface is carried out being lithographically formed contact hole；
9th, surface evaporation Al and anneal and etch to form electrode；
So far, a kind of low low residual voltage transient voltage suppressor diode element manufacturing of appearance is completed.
Compared with prior art, the utility model proposes a kind of low hold low residual voltage transient voltage suppressor diode device tool
Have the advantage that：
1. under low current, horizontal TVS diode provides quickly response triggering and current drain path；Under high current,
Longitudinal npn bipolar transistor turns on and provides the path leakage current of a low-resistance；
2. under identical condition of work, it will be apparent that reduce the surge residual voltage and parasitic capacitance of TVS device；
3. preparation method of the present utility model is compatible with existing Si bipolar process, preparation method is easy, is adapted to the big rule of industrialization
Mould is produced.
Brief description of the drawings
Fig. 1 for the low residual voltage transient voltage suppressor diode device of low appearance that the utility model is provided structural representation；
Fig. 2 for the low residual voltage transient voltage suppressor diode device of low appearance that the utility model is provided equivalent circuit diagram；
Fig. 3 for the low residual voltage transient voltage suppressor diode device of low appearance and traditional structure that the utility model is provided snowslide
Puncture the TLP curve comparison figures of transient voltage suppressor diode device；
Fig. 4 for the low residual voltage transient voltage suppressor diode device of low appearance that the utility model is provided preparation method flow
Figure.
Embodiment
In order to realize device described in the utility model, following examples are provided with reference to Fig. 1 and Fig. 4.
As shown in figure 1, a kind of low low residual voltage transient voltage suppressor diode device of appearance, including set gradually from bottom to top
Ohmic positive electrode contact zone, N+Substrate zone, N-Epitaxial layer, P bases, P+Trigger region, N+Injection region, ohm negative electrode contact zone, institute
State P+The trigger region of type is located at P bases top, the N+Injection region is located at P+Inside trigger region and both sides.
As shown in figure 4, making in the steps below：
Step one：Take a piece of N+N-The silicon epitaxial wafer of type, is cleaned to it, to remove surface contaminant, the N+N-Type
Silicon epitaxial wafer, N+The phosphonium ion doping concentration of substrate zone is 1 × 1018~1×1020cm-3。N-The thickness of epitaxial layer is 5 ~ 15 μm, its
Phosphonium ion doping concentration is 1 × 1015~1×1017cm-3。
Step 2：One layer of photoresist is coated on print surface and photoetching is carried out, window is formed at middle part, using photoresist to cover
Layer is covered, boron ion injection is carried out, the dosage of boron ion is 5.0e14, and Implantation Energy is 80keV, forms P bases.
Step 3：Remove photoresist and carry out the annealing of P bases.
Step 4：Print surface after annealing coats one layer of photoresist again, and window is formed with position in P bases, with
Photoresist is masking layer, carries out boron ion injection, and the dosage of boron ion is：1.0e16, Implantation Energy is 70keV, forms P+Touch
Send out area.
Step 5：Photoresist is removed, and carries out P+Trigger region is annealed；
Step 6：Print surface after annealing coats one layer of photoresist and carries out photoetching again, P bases middle part and
The left and right sides forms window, and using photoresist as carry out ion implanting is sheltered, phosphonium ion, the dosage of phosphonium ion are injected in the injection region
For 1.0e16, Implantation Energy is 70keV, forms N+Injection region.
Step 7：Photoresist is removed, and carries out N+Anneal injection region so that P+Trigger region and N+Injection region forms horizontal
TVS diode.
Step 8：Print surface is carried out to be lithographically formed contact hole.
Step 9：It is 2 μm of metal Al as electrode material, electronics that electron beam evaporation a layer thickness is used on print surface
During beam evaporation, reaction cavity air pressure is 1.0 × 10-7Pa, and deposition rate is 40/s.Then metal Al is carried out annealing and light
Carve, form electrode, a kind of low low residual voltage transient voltage suppressor diode device of appearance is made.
The utility model is not limited to above-mentioned preferred forms, and anyone should learn that under enlightenment of the present utility model
The structure change made, it is every that there is same or like technical scheme with the utility model, each fall within guarantor of the present utility model
Within the scope of shield.
Such as equivalent circuit diagrams of the Fig. 2 for the low residual voltage transient voltage suppressor diode device of low appearance that the utility model is provided,
The utility model turns into the new structure that a horizontal snowslide TVS diode and a vertical bipolar transistors are combined, in small electricity
Flow down, horizontal TVS diode provides quickly response triggering and current drain path；Under high current, longitudinal npn bipolar transistor
Turn on and provide the path leakage current of a low-resistance.
Fig. 3 for the low residual voltage transient voltage suppressor diode device of low appearance and traditional structure that the utility model is provided snowslide
Puncture shown in the TLP curve comparison figures of transient voltage suppressor diode device, the utility model and traditional structure ratio are responded fast
Speed, under identical condition of work, it will be apparent that reduce the surge residual voltage and parasitic capacitance of TVS device.
Claims (6)
1. a kind of low low residual voltage transient voltage suppressor diode device of appearance, including the ohmic positive electrode set gradually from bottom to top connect
Touch area, N+Substrate zone, N-Epitaxial layer, P bases, P+Trigger region, N+Injection region, ohm negative electrode contact zone, the P+The triggering of type
Area is located at P bases top, the N+Injection region is located at P+Inside trigger region and both sides.
2. a kind of low low residual voltage transient voltage suppressor diode device of appearance as claimed in claim 1, it is characterised in that the N+
The phosphonium ion doping concentration of substrate zone is 1 × 1018~1×1020cm-3。
3. a kind of low low residual voltage transient voltage suppressor diode device of appearance as claimed in claim 1, it is characterised in that the N-
The thickness of epitaxial layer is 5 ~ 15 μm, and its phosphonium ion doping concentration is 1 × 1015~1×1017cm-3。
4. a kind of low low residual voltage transient voltage suppressor diode device of appearance as claimed in claim 1, it is characterised in that the P
The thickness of base is 2 ~ 5 μm, and its boron ion doping concentration is 1 × 1015~1×1017cm-3。
5. a kind of low low residual voltage transient voltage suppressor diode device of appearance as claimed in claim 1, it is characterised in that the P+
The thickness of trigger region is 0.5 ~ 2 μm, and its boron ion doping concentration is 1 × 1017~1×1020cm-3。
6. a kind of low low residual voltage transient voltage suppressor diode device of appearance as claimed in claim 1, it is characterised in that the N+
The thickness of injection region is 0.5 ~ 2 μm, and its phosphonium ion doping concentration is 1 × 1017~1×1020cm-3。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720037772.1U CN206401295U (en) | 2017-01-13 | 2017-01-13 | A kind of low low residual voltage transient voltage suppressor diode device of appearance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720037772.1U CN206401295U (en) | 2017-01-13 | 2017-01-13 | A kind of low low residual voltage transient voltage suppressor diode device of appearance |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206401295U true CN206401295U (en) | 2017-08-11 |
Family
ID=59513968
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720037772.1U Active CN206401295U (en) | 2017-01-13 | 2017-01-13 | A kind of low low residual voltage transient voltage suppressor diode device of appearance |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206401295U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106684040A (en) * | 2017-01-13 | 2017-05-17 | 上海长园维安微电子有限公司 | Low-capacitance and low-residual voltage transient voltage suppressor diode device and manufacturing method thereof |
| CN113764404A (en) * | 2021-09-22 | 2021-12-07 | 成都吉莱芯科技有限公司 | Low-capacitance low-residual-voltage bidirectional ESD (electro-static discharge) protection device and manufacturing method thereof |
-
2017
- 2017-01-13 CN CN201720037772.1U patent/CN206401295U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106684040A (en) * | 2017-01-13 | 2017-05-17 | 上海长园维安微电子有限公司 | Low-capacitance and low-residual voltage transient voltage suppressor diode device and manufacturing method thereof |
| CN113764404A (en) * | 2021-09-22 | 2021-12-07 | 成都吉莱芯科技有限公司 | Low-capacitance low-residual-voltage bidirectional ESD (electro-static discharge) protection device and manufacturing method thereof |
| CN113764404B (en) * | 2021-09-22 | 2024-06-04 | 江苏吉莱微电子股份有限公司 | Low-capacitance low-residual voltage bidirectional ESD protection device and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106684040A (en) | Low-capacitance and low-residual voltage transient voltage suppressor diode device and manufacturing method thereof | |
| US9679998B2 (en) | Bi-directional punch-through semiconductor device and manufacturing method thereof | |
| US8339758B2 (en) | Transient voltage suppressor and method | |
| CN104752417A (en) | Silicon controlled rectifier protection device and forming method thereof | |
| US8093133B2 (en) | Transient voltage suppressor and methods | |
| CN103384063A (en) | Surge protection circuit and production method thereof | |
| US20090273868A1 (en) | Transient voltage suppressor and method | |
| CN206401295U (en) | A kind of low low residual voltage transient voltage suppressor diode device of appearance | |
| US11430780B2 (en) | TVS device and manufacturing method therefor | |
| CN103972305B (en) | Method for manufacturing low-voltage transient voltage suppression diode chip | |
| CN103094278A (en) | Positive channel metal oxide semiconductor (PMOS) embedded low-voltage trigger silicon controlled rectifier (SCR) device for electro-static discharge (ESD) protection | |
| KR20210071854A (en) | TVS Diode and Assembly Having Asymmetric Breakdown Voltage | |
| US7309905B2 (en) | Bipolar-based SCR for electrostatic discharge protection | |
| US9831327B2 (en) | Electrostatic discharge protection devices and methods of forming the same | |
| CN111710674A (en) | Ultra-low voltage trigger device and manufacturing method thereof | |
| US20160260701A1 (en) | Esd snapback based clamp for finfet | |
| CN110867440A (en) | Asymmetric bidirectional thyristor electrostatic protection device and manufacturing method thereof | |
| JP6594296B2 (en) | Zener diode with polysilicon layer with improved reverse surge capability and reduced leakage current | |
| CN112071836B (en) | Grid-constrained silicon controlled rectifier and implementation method thereof | |
| CN112071835B (en) | Grid-constrained silicon controlled rectifier and implementation method thereof | |
| CN108565259B (en) | Semiconductor device and method for manufacturing the same | |
| CN109346465B (en) | Low-clamping protection device structure and manufacturing method thereof | |
| CN102054836B (en) | Thyristor for electrostatic discharge | |
| US20150221633A1 (en) | Semiconductor device comprising an esd protection device, an esd protection circuitry, an integrated circuit and a method of manufacturing a semiconductor device | |
| US20150097269A1 (en) | Transient voltage suppression device and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Seven road 201202 Shanghai Pudong New Area Shiwan No. 1001 Patentee after: Shanghai Wei'an Semiconductor Co., Ltd Address before: Seven road 201202 Shanghai Pudong New Area Shiwan No. 1001 Patentee before: Shanghai Changyuan Wayon Microelectronics Co., Ltd. |
|
| CP01 | Change in the name or title of a patent holder |