CN202667933U - Galvanometer type ultraviolet laser cutting device for wafer chips - Google Patents

Galvanometer type ultraviolet laser cutting device for wafer chips Download PDF

Info

Publication number
CN202667933U
CN202667933U CN 201220266386 CN201220266386U CN202667933U CN 202667933 U CN202667933 U CN 202667933U CN 201220266386 CN201220266386 CN 201220266386 CN 201220266386 U CN201220266386 U CN 201220266386U CN 202667933 U CN202667933 U CN 202667933U
Authority
CN
China
Prior art keywords
laser
mirror
galvanometer
platform
laser cutting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN 201220266386
Other languages
Chinese (zh)
Inventor
赵裕兴
狄建科
蔡仲云
张子国
益凯劼
张伟
闫华
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JIANGYIN DELI LASER EQUIPMENT CO Ltd
Original Assignee
JIANGYIN DELI LASER EQUIPMENT CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JIANGYIN DELI LASER EQUIPMENT CO Ltd filed Critical JIANGYIN DELI LASER EQUIPMENT CO Ltd
Priority to CN 201220266386 priority Critical patent/CN202667933U/en
Application granted granted Critical
Publication of CN202667933U publication Critical patent/CN202667933U/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Landscapes

  • Laser Beam Processing (AREA)

Abstract

The utility model relates to a galvanometer type ultraviolet laser cutting device for wafer chips. The device comprises a laser (1), wherein lasers generated by the laser (1) sequentially pass through an optical shutter (2) and a beam expander (3) and then enter a galvanometer system (5); the lasers emitted from the galvanometer system (5) focus on a to-be-cut chip (9) on a platform (10); a blowing system (7) and a dust collection system (8) are respectively arranged on two sides above the platform (10); a CCD (Charge Coupled Device) alignment viewing system (6) is arranged above the platform (10); two reflecting lenses (4) are arranged on an optical path between the beam expander (3) and the galvanometer system (5); and the included angle between each reflecting lens (4) and the optical path is 45 degrees. The galvanometer type ultraviolet laser cutting device for the wafer chips has high cutting efficiency and high cutting yield.

Description

A kind of mirror-vibrating Ultra-Violet Laser cutting crystal wafer chip apparatus
Technical field
The utility model relates to a kind of device of cutting and separating chip wafer, especially relates to a kind of device that utilizes Ultra-Violet Laser cutting stainless steel substrate wafer chip.
Background technology
Current, along with the development of silicon crystal unit chip technology, because cost factor, a kind of silicon crystal unit chip based on the stainless steel-based end develops out; In addition, along with the functional integration of chip is more and more higher, the simple grain chip size is more and more less, and the number of chips on the unit are is more and more, and mode and the cutting efficiency of chip cutting proposed Secretary.
Present cutting mode mainly adopts cutter cutting, and its cutting efficiency is low, and there is inherent shortcoming in it, and in the process of cutting, in Cutting Road marginal existence edge-curl phenomenon, yield is low.
Summary of the invention
The purpose of this utility model is to overcome above-mentioned deficiency, provides cutting efficiency the high and high a kind of mirror-vibrating Ultra-Violet Laser cutting crystal wafer chip apparatus of cutting yield rate.
The purpose of this utility model is achieved in that a kind of mirror-vibrating Ultra-Violet Laser cutting crystal wafer chip apparatus, described device includes laser instrument, the laser that described laser instrument produces enters galvanometer system successively behind optical gate and beam expanding lens, the Laser Focusing that described galvanometer system penetrates is on the chip to be cut that places on the platform.
A kind of mirror-vibrating Ultra-Violet Laser of the utility model cutting crystal wafer chip apparatus, both sides, described platform top are respectively arranged with scavenger system and dust-precipitating system, and described platform top also is provided with CCD contraposition observing system.
A kind of mirror-vibrating Ultra-Violet Laser of the utility model cutting crystal wafer chip apparatus be provided with the two-face mirror sheet on the light path between described beam expanding lens and the galvanometer system, and the reflecting surface of reflecting optics is all at 45 ° with light path.
A kind of mirror-vibrating Ultra-Violet Laser of the utility model cutting crystal wafer chip apparatus, described laser instrument links to each other with control system through communication system with galvanometer system.
A kind of mirror-vibrating Ultra-Violet Laser of the utility model cutting crystal wafer chip apparatus, described laser instrument is ultraviolet high-frequency impulse laser instrument.
Compared with prior art, the beneficial effects of the utility model are:
The utility model adopts the mirror-vibrating ultraviolet laser device, utilizes the cutting of high frequency Ultra-Violet Laser, has the following advantages with respect to the universal cutter cutting:
1), the edge-curl phenomenon that the cutter cutting of effectively avoiding exists adopts laser to cut at chip back, cuts complete rear chip front side edge without crimping, raises phenomenon, has promoted greatly the finished product yield;
2) with respect to the cutter cutting, use high-speed vibrating mirror to say soon scan incision, promoted greatly cutting efficiency.
Description of drawings
Fig. 1 is the structural representation of a kind of mirror-vibrating Ultra-Violet Laser of the utility model cutting crystal wafer chip apparatus.
Wherein:
Laser instrument 1, optical gate 2, beam expanding lens 3, reflecting optics 4, galvanometer system 5, CCD contraposition observing system 6, scavenger system 7, dust-precipitating system 8, chip to be cut 9, platform 10, communication system 11, control system 12.
The specific embodiment
Referring to Fig. 1, a kind of mirror-vibrating Ultra-Violet Laser cutting crystal wafer chip apparatus that the utility model relates to, described device includes laser instrument 1, the laser that described laser instrument 1 produces is successively through optical gate 2, enter galvanometer system 5 behind beam expanding lens 3 and the reflecting optics 4, the Laser Focusing that described galvanometer system 5 penetrates is at the chip to be cut 9 that places on the platform 10, both sides, described platform 10 top are respectively arranged with scavenger system 7 and dust-precipitating system 8, described platform 10 tops also are provided with CCD contraposition observing system 6, and described laser instrument 1 links to each other with control system 12 through communication system 11 with galvanometer system 5; Wherein laser instrument 1 is ultraviolet high-frequency impulse laser instrument, and it sends wavelength at the high-frequency pulse laser of ultraviolet section, and described reflecting optics 4 is the ultraviolet reflectance eyeglass, its role is to the laser that is in ultraviolet band is reflected.
During use, the focus of the high-frequency ultraviolet pulse laser that laser instrument 1 sends focuses on the upper surface of chip 9 to be cut, laser instrument 1 is via communication system 11 connection control system 12, by control system 12 gauge tap light, laser carries out coaxial expanding through 3 pairs of light beams of beam expanding lens after by optical gate 2, improve on the one hand the angle of divergence of beam propagation, reach the purpose of beam path alignment; On the one hand, laser beams coaxial is expanded in addition, so that hot spot is less after focusing on, thereby realize larger energy density and less cutting width; After adjusting route by ultraviolet reflectance eyeglass 4, light beam behind beam expanding lens 3 beam-expanding collimations enters galvanometer system 5, after light beam arrives galvanometer system 5, carry out data communication through communication system 11 and control system 12, cutting pattern is converted into data signal, on the chip to be cut 9 of needs cutting, chip 9 to be cut is fixed on the platform 10 by vacuum suction with graphics; Control system 12 is according to identification and the importing of manuscript, through CCD contraposition observing system 6 positional dissection positions, accurately processing;
Adopt the small breadth Slice by slice cutting when cutting, then small breadth splicing is combined into whole cutting breadth.Namely in single small breadth, whole cutting-height is divided into multilayer, cross Cutting Road by galvanometer system 5 rapid scannings after, and then lower one deck of processing is realized the cutting of whole chip thickness, separating chips at last;
After galvanometer system 5 processed current small breadth, the next small breadth of platform movement began processing again, and so repeatedly, high-efficiency high-precision is realized the cutting and separating of full wafer chip.
The method of a kind of mirror-vibrating Ultra-Violet Laser cutting crystal wafer chip that the utility model relates to, its method consists predominantly of following steps:
Step 1, the chip to be cut back of the body is affixed on the UV film, be about on the glue layer that one side that chip to be cut has surperficial gold goal is attached at the UV film (this glue-line is made of UV glue), and so that gold goal is trapped in the glue-line fully, and the bondline thickness on the glue layer of UV film is greater than the height of the surperficial gold goal on the chip to be cut;
Step 2, apply protection liquid at the back side of chip to be cut (i.e. the another side opposite with the one side with surperficial gold goal), will protect liquid to smear evenly (described protection liquid is water-soluble protection liquid) by photoresist spinner;
Step 3, the chip to be cut of completing steps two is positioned on the processing platform;
Step 4, utilize laser that the chip to be cut that is positioned on the processing platform is cut;
During cutting, the focus of laser focuses on the one side that chip to be cut applies protection liquid, and this kind cutting mode can be avoided producing the volcanic crater in the front so that the volcanic crater during cutting remains in chip back, affects chip functions; And by applying protection liquid, effectively avoided the rear residual residue of cutting to pollute chip;
During cutting, the scavenger system and the dust-precipitating system that are installed in respectively the left and right sides, platform top siphon away the residue in the process;
Step 5, cleaning utilize deionized water to clean the protection liquid on the residual chip;
Step 6, by UV dispergation machine the glue-line on the UV film is carried out dispergation, thereby so that chip and UV film after the cutting be separated from each other.

Claims (5)

1. mirror-vibrating Ultra-Violet Laser cutting crystal wafer chip apparatus, it is characterized in that: described device includes laser instrument (1), the laser that described laser instrument (1) produces enters galvanometer system (5) successively behind optical gate (2) and beam expanding lens (3), the Laser Focusing that described galvanometer system (5) penetrates is on the chip to be cut (9) that places on the platform (10).
2. a kind of mirror-vibrating Ultra-Violet Laser cutting crystal wafer chip apparatus as claimed in claim 1, it is characterized in that: both sides, described platform (10) top are respectively arranged with scavenger system (7) and dust-precipitating system (8), and described platform (10) top also is provided with CCD contraposition observing system (6).
3. a kind of mirror-vibrating Ultra-Violet Laser cutting crystal wafer chip apparatus as claimed in claim 1, it is characterized in that: be provided with two-face mirror sheet (4) on the light path between described beam expanding lens (3) and the galvanometer system (5), and the reflecting surface of reflecting optics (4) is all at 45 ° with light path.
4. a kind of mirror-vibrating Ultra-Violet Laser cutting crystal wafer chip apparatus as claimed in claim 1 or 2, it is characterized in that: described laser instrument (1) links to each other with control system (12) through communication system (11) with galvanometer system (5).
5. a kind of mirror-vibrating Ultra-Violet Laser cutting crystal wafer chip apparatus as claimed in claim 1 or 2, it is characterized in that: described laser instrument (1) is ultraviolet high-frequency impulse laser instrument.
CN 201220266386 2012-06-07 2012-06-07 Galvanometer type ultraviolet laser cutting device for wafer chips Expired - Lifetime CN202667933U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201220266386 CN202667933U (en) 2012-06-07 2012-06-07 Galvanometer type ultraviolet laser cutting device for wafer chips

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201220266386 CN202667933U (en) 2012-06-07 2012-06-07 Galvanometer type ultraviolet laser cutting device for wafer chips

Publications (1)

Publication Number Publication Date
CN202667933U true CN202667933U (en) 2013-01-16

Family

ID=47488866

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201220266386 Expired - Lifetime CN202667933U (en) 2012-06-07 2012-06-07 Galvanometer type ultraviolet laser cutting device for wafer chips

Country Status (1)

Country Link
CN (1) CN202667933U (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102773612A (en) * 2012-06-07 2012-11-14 江阴德力激光设备有限公司 Vibrating mirror type ultraviolet laser cutting wafer chip device and method thereof
CN103659004A (en) * 2013-12-12 2014-03-26 深圳市大族激光科技股份有限公司 Laser cutting pretreatment device and laser cutting device and method
CN107824958A (en) * 2017-12-01 2018-03-23 暨南大学 A kind of 355nm Ultra-Violet Lasers diamond cut equipment
CN111822878A (en) * 2020-06-16 2020-10-27 深圳中科光子科技有限公司 Processing equipment for laser cutting of pipe fitting material

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102773612A (en) * 2012-06-07 2012-11-14 江阴德力激光设备有限公司 Vibrating mirror type ultraviolet laser cutting wafer chip device and method thereof
CN102773612B (en) * 2012-06-07 2015-06-10 江阴德力激光设备有限公司 Vibrating mirror type ultraviolet laser cutting wafer chip device and method thereof
CN103659004A (en) * 2013-12-12 2014-03-26 深圳市大族激光科技股份有限公司 Laser cutting pretreatment device and laser cutting device and method
CN103659004B (en) * 2013-12-12 2016-08-24 大族激光科技产业集团股份有限公司 Cut pretreatment unit, laser cutting device and laser cutting method
CN107824958A (en) * 2017-12-01 2018-03-23 暨南大学 A kind of 355nm Ultra-Violet Lasers diamond cut equipment
CN111822878A (en) * 2020-06-16 2020-10-27 深圳中科光子科技有限公司 Processing equipment for laser cutting of pipe fitting material

Similar Documents

Publication Publication Date Title
CN102773612B (en) Vibrating mirror type ultraviolet laser cutting wafer chip device and method thereof
CN202667933U (en) Galvanometer type ultraviolet laser cutting device for wafer chips
CN109759727A (en) A kind of laser cutting method and system of frosted glass
CN105458515B (en) A kind of sapphire laser grooving device and its grooving method
CN109352184B (en) Beam splitting laser cutting method for silicon-based wafer
JP2019535523A (en) Method of laser processing a laminated work stack for forming a contour line of a first transparent workpiece and separating a resin layer from the first transparent workpiece
KR20140137437A (en) Laser scribing with extended depth affectation into a workpiece
CN101983825A (en) Picosecond laser scribing device for light emitting diode (LED) wafer
CN102307699A (en) Workpiece cutting method
TW200428729A (en) Focusing an optical beam to two foci
CN102470484A (en) Laser machining device and laser machining method
CN106493474B (en) A kind of laser double-surface score device
CN102886609A (en) Multi-focus femtosecond laser scribing method applied to separation of light emitting diode (LED) device
CN102416528A (en) Device and method for etching copper conducting film on glass substrate ink by using pulse laser
CN103056527A (en) Device and method for laser etching of conducting film layers on touch on lens (TOL) and one glass solution (OGS) touch components
CN106414352A (en) Optical glass and method for cutting glass substrate
CN209969874U (en) Laser cutting system for ground glass
CN102310285A (en) Laser processing device of silicon glass bonding slice and method thereof
CN219211996U (en) Laser light path for realizing functions of wafer hidden cutting and surface grooving
CN102500933A (en) Laser machining method for matching with light-emitting diode (LED) inner cutting process
CN106405738A (en) Laser pretreatment method for increasing fiber damage threshold
CN215658436U (en) Solar cell film edge cleaning light path system
CN104237997A (en) Device and method for carrying out laser machining on light guide board inside glass
CN202174351U (en) Laser processing device of a silicon-glass bonding slice
CN201841362U (en) Picosecond laser scribing device for LED wafer

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CX01 Expiry of patent term

Granted publication date: 20130116

CX01 Expiry of patent term