CN219211996U - Laser light path for realizing functions of wafer hidden cutting and surface grooving - Google Patents
Laser light path for realizing functions of wafer hidden cutting and surface grooving Download PDFInfo
- Publication number
- CN219211996U CN219211996U CN202223142650.9U CN202223142650U CN219211996U CN 219211996 U CN219211996 U CN 219211996U CN 202223142650 U CN202223142650 U CN 202223142650U CN 219211996 U CN219211996 U CN 219211996U
- Authority
- CN
- China
- Prior art keywords
- laser
- wafer
- mirror
- cutting
- speculum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Laser Beam Processing (AREA)
Abstract
The utility model belongs to the technical field of wafer cutting, and particularly relates to a laser light path for realizing the functions of wafer hidden cutting and surface grooving. The laser path device comprises a laser, a focusing lens group, a beam splitting prism, a reflecting mirror, a beam splitting mirror, a light path shaping mirror, a diaphragm, a half wave plate, a laser frequency multiplier device and the like and is used for realizing laser cutting functions of different wavelengths. The detection system comprises a CCD camera, a power meter and a computer display screen. The wafer is fixedly placed on a processing platform, and the detection system is controlled to control the movement of the processing platform to move the wafer to a preset position; and meanwhile, the laser is controlled to generate laser, and the laser passes through a preset optical path and an optical element and then is projected onto the wafer to realize the surface cutting or hidden cutting function.
Description
Technical Field
The utility model belongs to the technical field of wafer cutting, and particularly relates to a laser light path for realizing functions of wafer hidden cutting and surface slotting.
Background
In the semiconductor packaging industry, dicing of wafers is one of the most difficult and costly processes. The laser cutting technology is used for cutting semiconductor wafers in a non-contact manner, so that the yield and the processing efficiency of the semiconductor wafers are remarkably improved, and the laser cutting technology is one of the main wafer cutting technologies in the current and future. Among the currently used process technologies for laser dicing of wafers are mainly wafer laser surface dicing or grooving processes, wafer laser stealth dicing processes, and other laser dicing processes derived from these two laser dicing technologies. The laser wave band is mainly infrared laser and ultraviolet laser. The principle of the wafer laser cutting technology mainly utilizes a certain optical path and a specific optical element to focus a laser beam on the surface of a wafer cutting channel or the inside of the wafer, so as to remove the cutting channel material or form a modified layer in the inside of the wafer, and meanwhile, the laser beam and the wafer are relatively displaced to complete the cutting of the wafer chip.
Currently, the mainstream wafers include silicon wafers, siC wafers, sapphire wafers, gaP wafers, inP wafers, gaN wafers, ge wafers, and the like. Because the wafer of different kinds of chips has different cutting channel materials and chip structures, different laser cutting process technologies, such as a 3D structure chip, a MEMS chip and the like, need to be selected during specific cutting, and the inside of the wafer contains micro mechanical structures such as a film, a cavity, a cantilever and the like, and the wafer has lower strength, so that the functional structure of the chip needs to be paid attention to when the wafer is cut. Similar wafer laser surface cutting technology is not suitable for wafer cutting of chips because the process involves gluing, cleaning and other processes, and a processing process of laser invisible cutting is needed to be selected;
the laser path of the current wafer laser cutting device is mostly capable of realizing one type of wafer laser cutting process, namely, one laser cutting device can only realize invisible cutting of a wafer, or only can carry out surface slotting of the wafer, and the two types of cutting can not be carried out simultaneously, so that a practical problem is brought, and different types of wafer laser cutting devices are required to be put into in order to cut different types of wafers and realize different laser cutting process combinations, which can certainly increase a large amount of extra capital investment and bring about increase of production cost. Meanwhile, when one device only has a single laser cutting process, and the wafer chip has a complex structure and material, and needs to be cut by combining multiple laser cutting processes, the wafer needs to be switched among different laser cutting devices, and the operation process is complex, the production efficiency and the product yield are low.
In summary, it is necessary to improve and optimize the laser path of the current wafer laser cutting device, and provide a multifunctional laser path, so that one device has multiple cutting functions such as surface grooving and invisible cutting of the wafer laser.
Disclosure of Invention
Aiming at the defects of the prior art, the utility model aims to provide a laser light path for realizing the functions of hidden cutting and surface grooving of a wafer, and solves the problems that one laser cutting device can only realize the hidden cutting of the wafer or can only carry out the surface grooving of the wafer, but can not simultaneously carry out the two cutting processes, thereby bringing about a practical problem, and different types of wafer laser cutting devices are required to be input to realize the laser cutting of different types of wafers and the combination of different laser cutting processes, which can certainly increase a great amount of additional fund input and bring about the increase of production cost. Meanwhile, when one device only has a single laser cutting process, and when the wafer chip structure and the material are complex and multiple laser cutting processes are needed to be combined for cutting, the wafer is needed to be switched among different laser cutting devices, and the technical problems of complex operation process, low production efficiency and low product yield are solved.
The scheme adopted by the utility model is as follows: the laser path for realizing the functions of wafer hidden cutting and surface slotting comprises a laser, a movable reflector, a first reflector, a second reflector, a third reflector, a fourth reflector and a fifth reflector, and is characterized in that one end of the laser is provided with the movable reflector, the movable reflector is driven by a motor, the upper end of the movable reflector is provided with the first reflector, one end of the reflector is provided with a beam expander, one end of the beam expander is provided with a first half wave plate, and one end of the first half wave plate is provided with a first diaphragm corresponding to the second reflector;
the right end of the movable reflector is provided with a laser frequency multiplier, one end of the laser frequency multiplier is provided with a beam splitting prism, one end of the beam splitting prism is provided with a first optical gate, one end of the first optical gate is provided with a first light path beam splitter, and one end of the light path beam splitter is provided with a second half-wave plate corresponding to the third reflector;
the lower end of the beam splitting prism is provided with a fifth reflecting mirror, one end of the fifth reflecting mirror is provided with a second optical gate, one end of the second optical gate is provided with a second diaphragm, one end of the second diaphragm is provided with a second light path beam splitting mirror, one end of the second light path beam splitting mirror is provided with a third half-wave plate, and one end of the third half-wave plate is provided with a beam shaping mirror corresponding to the fourth reflecting mirror;
the lower ends of the second reflecting mirror, the third reflecting mirror and the fourth reflecting mirror are provided with focusing lens groups, the focusing lens groups are connected through vertical adjusting devices and used for vertical movement of the focusing lens groups, the lower ends of the focusing lens groups are provided with processing platforms, the processing platforms are provided with wafers corresponding to the focusing lens groups, and the upper ends of the second reflecting mirrors are provided with CCD cameras corresponding to the wafers.
Preferably, the vertical adjusting device is a Z-axis control module.
Preferably, a laser power meter is arranged on the processing platform.
Preferably, the laser is a femtosecond laser, and the laser wavelength is 1064nm.
Preferably, the laser is a picosecond laser with a laser wavelength of 1064nm.
The utility model has the beneficial effects that:
compared with the prior art, the utility model solves the problem of single function of the laser light path system in the existing laser cutting equipment, realizes that the laser light path has the functions of slotting and hidden cutting on the surface of the wafer, further reduces the production cost, simplifies the wafer cutting process, and improves the production efficiency and the chip quality.
Drawings
Fig. 1 is a laser light path diagram of the present utility model.
Fig. 2 is a schematic structural diagram of a control detection system provided by the present utility model.
Reference numerals: 1. a laser; 2. a movable mirror; 3. a first mirror; 4. a beam expander; 5. a first half-wave plate; 6. a first diaphragm; 7. a laser frequency multiplier; 8. a beam-splitting prism; 9. a first shutter; 10. a first light path beam splitter; 11. a second half-wave plate; 12. a motor; 13. a second shutter; 14. a second diaphragm; 15. a second light path beam splitter; 16. a third half-wave plate; 17. a beam shaping mirror; 18. a processing platform; 19. a wafer; 20. a focusing lens group; 21. a laser power meter; 22. a Z-axis control module; 23. a CCD camera; 24. a second mirror; 25. a third mirror; 26. a fourth mirror; 27. and a fifth mirror.
Detailed Description
The foregoing and other features, aspects and advantages of the present utility model will become more apparent from the following detailed description of the embodiment, which proceeds with reference to the accompanying drawings. The following embodiments are described in detail with reference to the drawings.
Exemplary embodiments of the present utility model will be described below with reference to the accompanying drawings.
The first embodiment is a laser path for realizing the functions of wafer hidden cutting and surface slotting, comprising a laser 1, a movable reflector 2, a first reflector 3, a second reflector 24, a third reflector 25, a fourth reflector 26 and a fifth reflector 27, wherein one end of the laser 1 is provided with the movable reflector 2, the movable reflector 2 is driven by a motor 12, the upper end of the movable reflector 2 is provided with the first reflector 3, one end of the reflector is provided with a beam expander 4, one end of the beam expander 4 is provided with a first half-wave plate 5, and one end of the first half-wave plate 5 is provided with a first diaphragm 6 corresponding to the second reflector 24;
the right end of the movable reflector 2 is provided with a laser frequency multiplier 7, one end of the laser frequency multiplier 7 is provided with a beam splitting prism 8, one end of the beam splitting prism 8 is provided with a first optical gate 9, one end of the first optical gate 9 is provided with a first light path beam splitter 10, and one end of the light path beam splitter is provided with a second half-wave plate 11 corresponding to the third reflector 25;
the lower end of the beam splitting prism 8 is provided with a fifth reflecting mirror 27, one end of the fifth reflecting mirror 27 is provided with a second optical gate 13, one end of the second optical gate 13 is provided with a second diaphragm 14, one end of the second diaphragm 14 is provided with a second light path beam splitting mirror 15, one end of the second light path beam splitting mirror 15 is provided with a third half-wave plate 16, and one end of the third half-wave plate 16 is provided with a beam shaping mirror 17 corresponding to the fourth reflecting mirror 26;
the lower ends of the second reflecting mirror 24, the third reflecting mirror 25 and the fourth reflecting mirror 26 are provided with a focusing lens group 20, the focusing lens group 20 is connected through a vertical adjusting device and used for vertical movement of the focusing lens group 20, the lower end of the focusing lens group 20 is provided with a processing platform 18, the processing platform 18 is provided with a wafer 19 corresponding to the focusing lens group 20, and the upper end of the second reflecting mirror 24 is provided with a CCD camera 23 corresponding to the wafer 19.
In the second embodiment, based on the first embodiment, the vertical adjustment device is a Z-axis control module 22.
In the third embodiment, a laser power meter 21 is disposed on the processing platform 18 based on the second embodiment.
In a fourth embodiment, based on the third embodiment, the laser 1 is a femtosecond laser 1, and the laser wavelength is 1064nm.
In a fifth embodiment, based on the fourth embodiment, the laser 1 is a picosecond laser 1, and the laser wavelength is 1064nm.
When the embodiment is used, when laser processing is carried out, a wafer is fixed on the processing platform in advance, the CCD camera is used for acquiring the position and state information of the wafer and feeding back the information to the control system, and the control system moves the wafer to a preset position by controlling the processing platform to carry out X-Y direction movement and rotation, so that laser passing through the focusing lens group irradiates the initial position of wafer cutting;
and then determining whether to select the laser hidden cutting function or the surface cutting function according to the material of the wafer cutting channel and the cutting process requirement. The control system controls the laser to generate laser, and simultaneously controls the laser beam to switch in different optical paths so as to realize different laser cutting functions;
the laser optical paths have three paths, the first optical path is an optical path for realizing the laser hidden cutting function, the second optical path is an optical path for realizing the laser double-thin-line slotting, and the third optical path is an optical path for realizing the laser wide slotting;
the first is an optical path that performs the laser cut-in function (the movable mirror is moved to a position corresponding to the first mirror by a motor): the laser device, the movable reflector, the first reflector, the beam expander, the first half-wave plate, the first diaphragm, the second reflector, the focusing lens group and the wafer;
when laser hidden cutting is carried out, the control system controls the motor to push the movable reflecting mirror to a preset optical path, the laser beam is switched to a first optical path, the laser beam enters the focusing lens group after passing through the movable reflecting mirror, the first reflecting mirror, the beam expanding mirror, the first half wave plate, the first diaphragm and other optical elements, the laser focus is focused in the wafer, the processing platform drives the wafer to move, the focusing lens group and the wafer cutting channel generate relative displacement, and the laser hidden cutting process of the wafer is realized.
The second is an optical path for realizing slotting of the laser double thin lines (a movable mirror is moved to a position corresponding to a laser frequency multiplier by a motor, and a first beam of light is split by a beam splitting prism): the device comprises a movable reflector, a laser frequency multiplier, a beam splitting prism, a first optical gate, a first light path beam splitter, a second half-wave plate, a third reflector, a focusing lens group and a wafer;
the third is an optical path for realizing wide slotting of laser (a movable mirror is moved to a position corresponding to a laser frequency multiplier by a motor, and a beam splitting prism splits a second beam of light): the movable reflector, the laser frequency multiplier, the beam splitting prism, the five reflectors, the second optical gate, the second diaphragm, the second light path beam splitting mirror, the third half wave plate, the beam shaping mirror, the fourth reflector, the focusing lens group and the wafer;
when laser surface cutting or grooving is carried out, the control system controls the motor to push the movable reflecting mirror away from the main light path, laser beams enter the beam splitting prism to be split into two beams after passing through the laser frequency multiplier device, wherein the first beam light path is shot into the focusing lens group after passing through optical elements such as a first optical gate, a first light path beam splitting mirror, a second half wave plate and the like, and the laser beams are focused on the surface of a wafer cutting channel to realize the optical path of laser double-thin-line grooving;
the other beam is also injected into the focusing lens group after passing through the second optical shutter, the second diaphragm, the second light path beam splitter, the third half wave plate and the beam shaper, and the laser beam is focused on the surface of the wafer cutting channel to realize the optical path of the laser wide slot;
meanwhile, the control system controls the processing platform to drive the wafer to move, so that the focusing lens group and the wafer cutting channel generate relative displacement, and the laser surface cutting or grooving process of the wafer is realized;
the picosecond or femtosecond laser is used for emitting pulse laser; the reflecting mirror is used for changing the incidence direction of the laser beam; the beam expander is used for obtaining a laser beam with good collimation; the first half-wave plate, the second half-wave plate and the third half-wave plate are used for adjusting the uniformity of laser spot energy and distribution; the first diaphragm and the second diaphragm are used for filtering stray light of the laser beam and adjusting the size of a light spot; the laser frequency multiplier device is used for frequency multiplication adjustment of laser frequency, and frequency multiplication amplification debugging is carried out on the laser frequency entering the laser frequency multiplier, namely, the laser wavelength 1064nm emitted by the laser is converted into 355nm; the beam splitting prism is used for splitting incident laser beams, one beam of the beam splitting prism is used for realizing an optical path for slotting the double thin lines of the laser, and the other beam of the beam splitting prism is used for realizing an optical path for slotting the wide laser; the first light path beam splitter and the second light path beam splitter are used for splitting the split laser; the first optical gate and the second optical gate are used for controlling the opening and closing of the optical path; the beam shaping mirror is used for processing the shape of the light spot; the focusing lens group is used for realizing the focusing effect of laser spots; the processing platform is used for moving and adjusting the position of the wafer; the driving motor is used for driving the movable reflecting mirror to move; the CCD camera is used for acquiring the position and state information of the wafer and feeding back the information to the control system; the laser power meter is used for measuring the energy of a laser spot and feeding back the energy to the control system; the display screen can be used for displaying and recording the relevant information of acquisition and detection in real time.
The above description is only for the purpose of illustrating the utility model, and it should be understood that the utility model is not limited to the above embodiments, but various modifications consistent with the idea of the utility model are within the scope of the utility model.
Claims (5)
1. The utility model provides a laser light path for realizing wafer hidden cutting and surface slotting function, includes laser instrument (1), movable mirror (2), first speculum (3), second speculum (24), third speculum (25), fourth speculum (26), fifth speculum (27), characterized in that, laser instrument (1) one end be equipped with movable mirror (2), movable mirror (2) be driven by motor (12), movable mirror (2) upper end be equipped with first speculum (3), mirror one end be equipped with beam expander (4), beam expander (4) one end be equipped with first half-wave plate (5), first half-wave plate (5) one end be equipped with first diaphragm (6) corresponding with second speculum (24);
the right end of the movable reflector (2) is provided with a laser frequency multiplier (7), one end of the laser frequency multiplier (7) is provided with a beam splitting prism (8), one end of the beam splitting prism (8) is provided with a first optical gate (9), one end of the first optical gate (9) is provided with a first light path beam splitting mirror (10), and one end of the light path beam splitting mirror is provided with a second half-wave plate (11) corresponding to the third reflector (25);
the lower end of the beam splitting prism (8) is provided with a fifth reflecting mirror (27), one end of the fifth reflecting mirror (27) is provided with a second optical gate (13), one end of the second optical gate (13) is provided with a second diaphragm (14), one end of the second diaphragm (14) is provided with a second light path beam splitting mirror (15), one end of the second light path beam splitting mirror (15) is provided with a third half-wave plate (16), and one end of the third half-wave plate (16) is provided with a beam shaping mirror (17) corresponding to the fourth reflecting mirror (26);
the utility model provides a pair of focusing lens group (20) is equipped with to second speculum (24), third speculum (25), fourth speculum (26) lower extreme, focusing lens group (20) be connected through vertical adjusting device for the vertical removal of focusing lens group (20), focusing lens group (20) lower extreme be equipped with processing platform (18), processing platform (18) on be equipped with wafer (19) that correspond with focusing lens group (20), second speculum (24) upper end be equipped with CCD camera (23) that correspond with wafer (19).
2. The laser path for implementing the functions of wafer dicing and surface grooving according to claim 1, characterized in that the vertical adjusting device is a Z-axis control module (22).
3. A laser path for performing the functions of dicing and surface grooving of a wafer according to claim 2, characterized in that the processing platform (18) is provided with a laser power meter (21).
4. A laser path for implementing the functions of wafer dicing and surface grooving according to claim 3, characterized in that the laser (1) is a femtosecond laser (1) with a laser wavelength of 1064nm.
5. The laser path for implementing the functions of wafer dicing and surface grooving according to claim 4, wherein the laser (1) is a picosecond laser (1) and the laser wavelength is 1064nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202223142650.9U CN219211996U (en) | 2022-11-25 | 2022-11-25 | Laser light path for realizing functions of wafer hidden cutting and surface grooving |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202223142650.9U CN219211996U (en) | 2022-11-25 | 2022-11-25 | Laser light path for realizing functions of wafer hidden cutting and surface grooving |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219211996U true CN219211996U (en) | 2023-06-20 |
Family
ID=86746880
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202223142650.9U Active CN219211996U (en) | 2022-11-25 | 2022-11-25 | Laser light path for realizing functions of wafer hidden cutting and surface grooving |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN219211996U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117415479A (en) * | 2023-12-19 | 2024-01-19 | 苏州镭明激光科技有限公司 | Cutting device, cutting method and cutting system |
| CN117798508A (en) * | 2024-03-01 | 2024-04-02 | 珠海市申科谱工业科技有限公司 | Wafer laser grooving device and grooving method |
-
2022
- 2022-11-25 CN CN202223142650.9U patent/CN219211996U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117415479A (en) * | 2023-12-19 | 2024-01-19 | 苏州镭明激光科技有限公司 | Cutting device, cutting method and cutting system |
| CN117798508A (en) * | 2024-03-01 | 2024-04-02 | 珠海市申科谱工业科技有限公司 | Wafer laser grooving device and grooving method |
| CN117798508B (en) * | 2024-03-01 | 2024-05-14 | 珠海市申科谱工业科技有限公司 | Wafer laser grooving device and grooving method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN219211996U (en) | Laser light path for realizing functions of wafer hidden cutting and surface grooving | |
| CN102773612B (en) | Vibrating mirror type ultraviolet laser cutting wafer chip device and method thereof | |
| JP5905274B2 (en) | Manufacturing method of semiconductor device | |
| CN103551732A (en) | Laser cutting device and cutting method | |
| CN102470484A (en) | Laser machining device and laser machining method | |
| CN102896426A (en) | Laser dicing method | |
| CN107717215B (en) | Multifunctional ultrafast laser micro machining system and method thereof | |
| US11571767B2 (en) | Laser processing device and laser processing method | |
| CN203541848U (en) | Laser cutting device | |
| CN108788452A (en) | A kind of processing method and device of ultrafast ultraviolet laser transparent material | |
| TW201136691A (en) | Laser processing apparatus | |
| TW201913795A (en) | Radiative wafer cutting using selective focusing depths | |
| KR20170096812A (en) | Multi-functional laser processing apparatus and laser processing method using the laser processing apparatus | |
| JPWO2012063348A1 (en) | Laser processing method and apparatus | |
| CN102717191A (en) | Device and method for pulse laser etching of roll-to-roll flexible conducting films | |
| CN113146031A (en) | Scanning microscopic ultrafast laser processing system based on dynamic field of view concatenation | |
| CN110977188A (en) | Multi-focus wafer internal cutting device based on spatial light modulator | |
| CN202667933U (en) | Galvanometer type ultraviolet laser cutting device for wafer chips | |
| CN116913809A (en) | Device and method for stripping semiconductor material by multi-wavelength laser coupling | |
| CN112935528A (en) | Method and device for carrying out high-quality cutting on wafer with larger thickness | |
| KR20080093321A (en) | Laser beam machining system and method for cutting of substrate using the same | |
| CN211554483U (en) | Three-dimensional dynamic focusing galvanometer device | |
| CN109530928B (en) | Method and device for processing chip by laser | |
| CN111940892B (en) | Fast switching optical path architecture for dicing low dielectric value material wafers | |
| CN114406482A (en) | Device for adjusting width of notch groove |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |