CN202174351U - Laser processing device of a silicon-glass bonding slice - Google Patents
Laser processing device of a silicon-glass bonding slice Download PDFInfo
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- CN202174351U CN202174351U CN 201120268535 CN201120268535U CN202174351U CN 202174351 U CN202174351 U CN 202174351U CN 201120268535 CN201120268535 CN 201120268535 CN 201120268535 U CN201120268535 U CN 201120268535U CN 202174351 U CN202174351 U CN 202174351U
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Abstract
The utility model relates to a laser processing device of a silicon-glass bonding slice. An optical shutter, a beam expanding lens and an aperture diaphragm are arranged on an output end of an ultravoilet high-frequency ultrashort pulse laser, a pair of 45 DEG holophotes are arranged on the output end of the aperture diaphragm, a deflection lens is arranged on the output end of the 45 DEG holophote, the 45 DEG holophote is arranged on the output end of the deflection lens, a condensing lens is arranged on the output end of the 45 DEG holophote and over against a three-dimensional movable platform, a CCD lighting lamp is mounted below the condensing lens, a coaxial CCD para-position observation system is arranged above the three-dimensional movable platform. The light beam emitted from the ultravoilet high-frequency ultrashort pulse laser is optically focused on an upper surface of a glass material to be processed, the width of the one-time cut path is controlled by the spiral deflection lens, the proper width of the cut path is adjusted, the cut path can be accurately positioned and cut, the focus point is controlled to correspondingly drop together with the increase in the cutting depth and the each cut path on the silicon-glass bonding slice is cut in turn.
Description
Technical field
The utility model relates to the equipment of the ultrashort arteries and veins cut silicon of a kind of ultraviolet high-frequency-glass bonding pad, belongs to the laser micro-machining technology field.
Background technology
At present, the method for cutting silicon-glass bonding pad mainly is the skive cutting.Diamond cut can be cut materials such as glass, silicon.But use skive to add man-hour, need to spray cutting liquid, pollute comparatively serious highly purified silicon face; Skive directly contacts with bonding pad, and stress is prone to cause peripheral core electric work ability components from being damaged; Emery wheel is easy blocking also, needs frequent change emery wheel and cutting liquid, and expense is bigger; The cracked rate of bonding pad is higher during cutting.
The definition of laser cutting technique is thermal source with the laser beam, adopts the heat abstraction method to carry out material separation, thereby forms the material processing method of Cutting Road.Laser beam is focused at material surface, makes the material surface temperature sharply raise and reaches the evaporation vaporized state of material, thereby realize the removal of material, has comprised material to the absorption of beam energy and the heat transfer process in the material.In this process, material is heated the sharply process of gasification takes place, and depends primarily on laser and material effects time and laser beam intensity.
Because the sustainable growth demand of semiconductor accurate device in industry such as automation, national defence, aeronautical and space technology; The processing request that is cut with degree of precision and greater efficiency to silicon-glass bonding pad; Traditional processing method can't realize fully, therefore, needs a kind of traditional cutting technique and device broken through especially; And laser is as manufacturing process advanced in the modern industry; Receive the attention of industry-by-industry, realize that through laser the feasibility and the practicality of silicon-glass bonding pad also obtains increasing checking, but also do not have a kind of cutting equipment and process of ability high efficiency cutting silicon-glass bonding pad at present all the more.
Summary of the invention
The purpose of the utility model is to overcome the deficiency that prior art exists; The device of the ultrashort arteries and veins cut silicon of a kind of ultraviolet high-frequency-glass bonding pad is provided; Be intended to overcome low, the easy defectives such as pollution and fragile device that produce of the working (machining) efficiency that exists in traditional cutting, utilization ultraviolet high frequency ultra-short pulse laser cuts silicon-glass bonding pad.
The purpose of the utility model realizes through following technical scheme:
The laser processing device of silicon-glass bonding pad; Characteristics are: the output of ultraviolet high-frequency ultrashort pulse laser is furnished with optical gate, and the output of optical gate is provided with beam expanding lens, and the output of beam expanding lens is furnished with aperture diaphragm; The output of aperture diaphragm is furnished with a pair of 45 degree completely reflecting mirrors; The output of 45 degree completely reflecting mirrors is furnished with the deflection camera lens, and the output of deflection camera lens is furnished with 45 degree completely reflecting mirrors, and the output of 45 degree completely reflecting mirrors is arranged focus lamp; Focus lamp is right against three-dimensional mobile platform; The below of focus lamp is equipped with the CCD illuminating lamp, and the top of said three-dimensional mobile platform is furnished with coaxial CCD contraposition observing system, and coaxial suction system also is installed on the said workbench.
Further; The laser processing device of above-mentioned silicon-glass bonding pad; Wherein, said ultraviolet high-frequency ultrashort pulse laser (1) is that wavelength is at 10ps～100ns, the frequency laser instrument at 10KHz～10MHz less than the ultraviolet of 355nm or deep ultraviolet laser, pulsewidth.
Substantive distinguishing features and obvious improvement that the utility model technical scheme is outstanding are mainly reflected in:
Adopt ultraviolet high frequency ultra-short pulse laser that silicon-glass bonding pad is cut; Ultraviolet high frequency ultra-short pulse laser cutting processing scope does not receive the restriction of Material Physics, mechanical performance, can process any hard, soft, crisp, heat-resisting or refractory metal and nonmetallic materials; Also be easy to processed complex profile, fine surface and flexible part; Focal beam spot is little, is prone to obtain good cutting section quality, and cutting debris contamination, thermal stress, residual stress, flow harden, heat affected area etc. are all smaller; Various materials are all higher to the absorptivity of ultraviolet, can process various transparent reaching visible light and the higher material of infrared reflectivity; Processing method is prone to be compounded to form new technology, and is easy to utilize.
Description of drawings
Below in conjunction with accompanying drawing the utility model technical scheme is described further:
Fig. 1: the structural representation of the utility model.
The specific embodiment
The equipment and the method for the utility model Ultra-Violet Laser machine silicon-glass bonding pad; Adopt ultraviolet high-frequency ultrashort pulse laser; Material processed is silicon-glass, glass-silicon-bonding materials such as glass; Laser focuses on surface on glass and the corresponding decline along with the intensification of Cutting Road, and glass absorbs laser pulse with silicon materials and separates, thereby reaches the effect of cutting.
As shown in Figure 1, the laser processing device of silicon-glass bonding pad, said ultraviolet high-frequency ultrashort pulse laser are that wavelength is at 10ps～100ns, the frequency laser instrument at 10KHz～10MHz less than the ultraviolet of 355nm or deep ultraviolet laser, pulsewidth; The output of ultraviolet high-frequency ultrashort pulse laser 1 is furnished with optical gate 2; The output of optical gate 2 is provided with beam expanding lens 3, and the output of beam expanding lens 3 is furnished with aperture diaphragm 4, and the output of aperture diaphragm 4 is furnished with a pair of 45 degree completely reflecting mirrors 5; The output of 45 degree completely reflecting mirrors 5 is furnished with deflection camera lens 6; Deflection camera lens 6 is driven by electric rotating machine 7, and the output of deflection camera lens 6 is furnished with 45 degree completely reflecting mirrors, and the output of 45 degree completely reflecting mirrors is arranged focus lamp 9; Focus lamp 9 is right against three-dimensional mobile platform 13; The below of focus lamp 9 is equipped with CCD illuminating lamp 11, and the top of three-dimensional mobile platform 13 is furnished with coaxial CCD contraposition observing system 8, and coaxial suction system 10 also is installed on the workbench 9.
When said apparatus is used for machine silicon-glass bonding pad; Laser spot focuses on the upper surface of processing work 12 on the three-dimensional mobile platform 13 before the processing; The laser that ultraviolet high-frequency ultrashort pulse laser 1 sends is through optical gate 2 gauge tap light; Carry out coaxial expansion bundle through 3 pairs of light beams of beam expanding lens after optical gate 2 control laser open the light, improve the angle of divergence of beam propagation on the one hand, reach the purpose of beam path alignment; In addition on the one hand; Can control the size of the final focal beam spot of laser, make to obtain desirable spot size, thereby realize the purpose that laser stabilization is cut; Expand light beam behind the bundle through the relatively poor light of aperture diaphragm 4 retaining trimming marginal plasma amounts after again through 45 spend completely reflecting mirrors 5 after light path vertically alter course; Light beam forms with the spiral aperture through deflection camera lens 6 again, the radii size of the deflection angle control aperture through changing deflection eyeglass 6, and light beam line focus mirror 9 focuses on the upper surface of processing work 12; Pattern cut is converted into data signal, and three-dimensional mobile platform 13 moves, and forms Cutting Road; Coaxial CCD contraposition observing system 8 is accurately located processing work 12 before the processing beginning; And utilize the witness marker of grabbing on the target program extracting processing work 12, offset value calculation is accurately mated pattern cut and actual Cutting Road; Real Time Observation machine process and effect in the process; 10 work of coaxial suction system will be cut the residue sucking-off, drop to minimum to the influence of silicon face residue.
Because in the laser processing procedure, the Cutting Road place can produce heat, and these heats also are enough to make the firm bonding point of script to separate, and influence the quality of silicon-glass bonding pad.In order to eliminate these influences, therefore need to be fit to the bonding mode of Laser Processing.Because mainly concentrate thereunder in the heat-affected zone of Laser Processing, so need avoid these sensitizing ranges, the zone that makes the Cutting Road below is at a distance from empty, and with the position deviation Cutting Road edge 200um of bonding point.Same suitable tool also has certain influence to processing effect, and the Cutting Road below slot area degree of depth is 5mm, is bonded on the tool after the silicon of Cutting Road below can be heated.
Utilize the light path focusing system of deflection eyeglass, silicon-glass bonding pad is carried out the cutting of efficient stable.Ultra-short pulse laser is shorter than most chemistry and physical reactions; Such as machinery and thermodynamic (al) characteristic time etc.; Peak power is high; Since ultrashort laser pulse and material each other in the multi-photon absorption process of uniqueness, its machining accuracy can break through the bottleneck of coherent limit, thus make nanoprocessing and corresponding little/possibility that becomes of nano-electron, little/receive optics.Ultrafast laser pulse train can be controlled ionization process, optionally ground state rotation etc. in ionized atom, the control molecule.
The light beam that ultraviolet high-frequency ultrashort pulse laser sends carries out optical focus, makes its optical focus focus on processed glass material upper surface, realizes the energy of optimized efficient utilization laser instrument; Cutting Road width through the control of spiral deflection eyeglass is once cut finally modulates suitable Cutting Road width, improves cutting efficiency; Through the control system, the Cutting Road that accurate location will be cut, the corresponding decline of control focus along with the increase of depth of cut, and carry out the cutting of each bar Cutting Road on silicon-glass bonding pad successively, finally accomplish the cutting technique of Cutting Road on the whole bonding pad; Coaxial suction system is air-breathing in the process, and the cutting chip on surface is in time removed, and guarantees the high-purity of silicon face.During cutting silicon-glass bonding pad, before the laser scribing Cutting Road, Compressed Gas is blown down along Cutting Road, the impurity on silicon-glass bonding pad is blown away, to improve the process repeatability and the stability of cut silicon-glass bonding pad.Its cutting material is easy to be crisp, the hard material of glass or glass-like, and two-sided strengthened glass and single face tempered glass also can be realized cutting through this patent method.The cutting lasing light emitter is nanosecond laser, picosecond laser or the femto-second laser of the ultrashort pulse of Ultra-Violet Laser high repetition frequency.
In sum, the utility model ultraviolet high frequency ultra-short pulse laser cutting processing scope does not receive the restriction of Material Physics, mechanical performance, can process any hard, soft, crisp, heat-resisting or refractory metal and nonmetallic materials; Also be easy to processed complex profile, fine surface and flexible part; Focal beam spot is little, is prone to obtain good cutting section quality, and cutting debris contamination, thermal stress, residual stress, flow harden, heat affected area etc. are all smaller; Processing method is prone to be compounded to form new technology, and is easy to utilize; Various materials are all higher to the absorptivity of ultraviolet, can process various transparent reaching visible light and the higher material of infrared reflectivity.
What need understand is: the above only is the preferred implementation of the utility model; For those skilled in the art; Under the prerequisite that does not break away from the utility model principle; Can also make some improvement and retouching, these improvement and retouching also should be regarded as the protection domain of the utility model.
Claims (2)
1. the laser processing device of silicon-glass bonding pad; It is characterized in that: the output of ultraviolet high-frequency ultrashort pulse laser (1) is furnished with optical gate (2); The output of optical gate (2) is provided with beam expanding lens (3); The output of beam expanding lens (3) is furnished with aperture diaphragm (4), and the output of aperture diaphragm (4) is furnished with a pair of 45 degree completely reflecting mirrors (5), and the output of 45 degree completely reflecting mirrors (5) is furnished with deflection camera lens (6); The output of deflection camera lens (6) is furnished with 45 degree completely reflecting mirrors; The output of 45 degree completely reflecting mirrors is arranged focus lamp (9), and focus lamp (9) is right against three-dimensional mobile platform (13), and the below of focus lamp (9) is equipped with CCD illuminating lamp (11); The top of said three-dimensional mobile platform (13) is furnished with coaxial CCD contraposition observing system (8), and coaxial suction system (10) also is installed on the said workbench (9).
2. the laser processing device of silicon according to claim 1-glass bonding pad is characterized in that: said ultraviolet high-frequency ultrashort pulse laser (1) is that wavelength is at 10ps～100ns, the frequency laser instrument at 10KHz～10MHz less than the ultraviolet of 355nm or deep ultraviolet laser, pulsewidth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120268535 CN202174351U (en) | 2011-07-27 | 2011-07-27 | Laser processing device of a silicon-glass bonding slice |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120268535 CN202174351U (en) | 2011-07-27 | 2011-07-27 | Laser processing device of a silicon-glass bonding slice |
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| CN202174351U true CN202174351U (en) | 2012-03-28 |
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| CN 201120268535 Expired - Fee Related CN202174351U (en) | 2011-07-27 | 2011-07-27 | Laser processing device of a silicon-glass bonding slice |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102310285A (en) * | 2011-07-27 | 2012-01-11 | 苏州德龙激光有限公司 | Laser processing device of silicon glass bonding slice and method thereof |
| CN105312774A (en) * | 2014-07-30 | 2016-02-10 | 深圳市韵腾激光科技有限公司 | Full-automatic wafer cutting machine |
| CN105364319A (en) * | 2014-08-25 | 2016-03-02 | 深圳市韵腾激光科技有限公司 | Full-automatic laser cutting machine for SD cards |
| CN105364303A (en) * | 2014-08-25 | 2016-03-02 | 深圳市韵腾激光科技有限公司 | Full-automatic dual SD card laser cutting machine |
-
2011
- 2011-07-27 CN CN 201120268535 patent/CN202174351U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102310285A (en) * | 2011-07-27 | 2012-01-11 | 苏州德龙激光有限公司 | Laser processing device of silicon glass bonding slice and method thereof |
| CN102310285B (en) * | 2011-07-27 | 2014-05-14 | 苏州德龙激光股份有限公司 | Laser processing device of silicon glass bonding slice and method thereof |
| CN105312774A (en) * | 2014-07-30 | 2016-02-10 | 深圳市韵腾激光科技有限公司 | Full-automatic wafer cutting machine |
| CN105364319A (en) * | 2014-08-25 | 2016-03-02 | 深圳市韵腾激光科技有限公司 | Full-automatic laser cutting machine for SD cards |
| CN105364303A (en) * | 2014-08-25 | 2016-03-02 | 深圳市韵腾激光科技有限公司 | Full-automatic dual SD card laser cutting machine |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 215021 Suzhou Industrial Park, Jiangsu, Hong Zhong Road, No. 77 Patentee after: Suzhou Delphi Laser Co., Ltd. Address before: 215021 Suzhou Industrial Park, Jiangsu, Hong Zhong Road, No. 77 Patentee before: Suzhou Delphi Laser Co., Ltd. |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120328 Termination date: 20150727 |
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| EXPY | Termination of patent right or utility model |