CN202643901U - Twohole crystal growth heat preservation cover - Google Patents
Twohole crystal growth heat preservation cover Download PDFInfo
- Publication number
- CN202643901U CN202643901U CN 201220227011 CN201220227011U CN202643901U CN 202643901 U CN202643901 U CN 202643901U CN 201220227011 CN201220227011 CN 201220227011 CN 201220227011 U CN201220227011 U CN 201220227011U CN 202643901 U CN202643901 U CN 202643901U
- Authority
- CN
- China
- Prior art keywords
- heat preservation
- hole
- stay
- warm case
- preservation cover
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model discloses a twohole crystal growth heat preservation cover which comprises a heat preservation base seat supporting a crucible, a heat preservation layer surrounded on the periphery of the outer side of the crucible and a heat preservation cover which is provided with an inner cavity and arranged above the heat preservation layer, wherein a through hole is arranged on a position of the center of the top of the heat preservation cover, and one side of the heat preservation cover is provided with an inclined through hole I which is communicated with the inner cavity and forms a certain included angle with a perpendicular bisector of the heat preservation cover. The twohole crystal growth heat preservation cover is characterized in that an inclined through hole II which is identical to the inclined through hole I in size and angle of inclination is arranged on the other side of the heat preservation cover in a corresponding mode, heat fields on two sides of a crystal can be balanced, stress caused by uneven temperature of the two sides of the crystal can be reduced, quality of the crystal is improved, and comprehensive observation of conditions inside an oven is facilitated.
Description
Technical field
The utility model relates to the crystal growth stay-warm case that has diplopore.
Background technology
It is pure to pursue height, and perfection of crystal is good, and crystal is scientific research personnel's main direction of studying always cheaply.Because it is fast that the guided mode method has crystalline growth velocity, size can accurately be controlled, simplified the work program of crystal, greatly reduce the crystal difficulty of processing, material, time and the energy have been saved, reducing production costs, increase economic efficiency, is one of current topmost growth method of artificial lens.But be to utilize the manual observation Modulating Power to control growth in traditional growth method; the Personnel Skill Levels is had relatively high expectations; the poor stabilizing influence perfection of crystal that affects crystalizing interface of temperature control precision has limited industrialization, stdn, large-scale production thereby the quality product consistence is poor.
The utility model content
The utility model purpose is exactly in order to remedy the defective of prior art, and a kind of be further improved on the basis of original stay-warm case, crystal growth stay-warm case that has diplopore that can improve crystal mass is provided.
The utility model is achieved through the following technical solutions:
A kind of crystal growth stay-warm case that has diplopore, comprise that the heat-insulating base of a support crucible, the thermal insulation layer and that is centered around the crucible outer periphery place the stay-warm case with inner chamber of described crucible and thermal insulation layer top, the crown center position of described stay-warm case has through hole, a side of described stay-warm case have one communicate with inner chamber and with the inclined via-hole one that the midperpendicular of stay-warm case forms an angle, it is characterized in that: the opposite side symmetry of described stay-warm case have one with the inclined via-hole two at inclined via-hole one formed objects, same tilt angle.
The utility model is the improvement of carrying out on the basis of original stay-warm case design, opens diplopore in the front and back of stay-warm case.Vision slit is just opened in stay-warm case design originally in front, find in the actual growth, perforate one side temperature is lower than the temperature of opposite one side, therefore, open another hole at perforate opposite stay-warm case and be used for heat radiation with balance crystalline both sides Wen Chang, the stress that minimizing produces because of crystal both sides non-uniform temperature improves crystal mass.And stay-warm case is opened symmetrical diplopore and is convenient to more fully observe situation in the stove.
The utility model has the advantages that: the utility model is the through hole that both sides symmetrical on stay-warm case have inclination, energy balance crystalline both sides Wen Chang, can not only reduce because of the uneven stress that produces of crystal both sides temperature, improve crystal mass, and be convenient to more fully observe situation in the stove.
Description of drawings
Fig. 1 is structural representation of the present utility model.
Embodiment
As shown in Figure 1, a kind of crystal growth stay-warm case that has diplopore, the heat-insulating base 1 that comprises a support crucible 2, the thermal insulation layer 3 and one that is centered around crucible 2 outer periphery places the stay-warm case with inner chamber 4 of described crucible 2 and thermal insulation layer 3 tops, the crown center position of described stay-warm case 4 has through hole, a side of described stay-warm case 4 have one communicate with inner chamber and with the inclined via-hole 1 that the midperpendicular of stay-warm case 4 forms an angle, it is characterized in that: the opposite side symmetry of described stay-warm case 4 have one with inclined via-hole one 5 formed objects, the inclined via-hole 26 at same tilt angle.
Claims (1)
1. crystal growth stay-warm case that has a diplopore, comprise that the heat-insulating base of a support crucible, the thermal insulation layer and that is centered around the crucible outer periphery place the stay-warm case with inner chamber of described crucible and thermal insulation layer top, the crown center position of described stay-warm case has through hole, a side of described stay-warm case have one communicate with inner chamber and with the inclined via-hole one that the midperpendicular of stay-warm case forms an angle, it is characterized in that: the opposite side symmetry of described stay-warm case have one with the inclined via-hole two at inclined via-hole one formed objects, same tilt angle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220227011 CN202643901U (en) | 2012-05-19 | 2012-05-19 | Twohole crystal growth heat preservation cover |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220227011 CN202643901U (en) | 2012-05-19 | 2012-05-19 | Twohole crystal growth heat preservation cover |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202643901U true CN202643901U (en) | 2013-01-02 |
Family
ID=47413035
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220227011 Expired - Fee Related CN202643901U (en) | 2012-05-19 | 2012-05-19 | Twohole crystal growth heat preservation cover |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202643901U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113201790A (en) * | 2021-04-22 | 2021-08-03 | 中科汇通(内蒙古)投资控股有限公司 | Silicon carbide single crystal growth device with temperature measuring hole dust self-cleaning structure |
-
2012
- 2012-05-19 CN CN 201220227011 patent/CN202643901U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113201790A (en) * | 2021-04-22 | 2021-08-03 | 中科汇通(内蒙古)投资控股有限公司 | Silicon carbide single crystal growth device with temperature measuring hole dust self-cleaning structure |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130102 Termination date: 20150519 |
|
| EXPY | Termination of patent right or utility model |