CN202626351U - Inlet gas impurity discharging device for polysilicon ingot furnace - Google Patents
Inlet gas impurity discharging device for polysilicon ingot furnace Download PDFInfo
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- CN202626351U CN202626351U CN 201220047131 CN201220047131U CN202626351U CN 202626351 U CN202626351 U CN 202626351U CN 201220047131 CN201220047131 CN 201220047131 CN 201220047131 U CN201220047131 U CN 201220047131U CN 202626351 U CN202626351 U CN 202626351U
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- gas
- inlet pipe
- air inlet
- discharging apparatus
- trash discharging
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Abstract
The utility model provides a inlet gas impurity discharging device for a polysilicon ingot furnace. The ingot furnace is internally provided with a protecting plate, the inlet gas impurity discharging device is arranged above the protecting plate, and a gas outlet is arranged between the inlet gas impurity discharging device and the protecting plate; and the inlet gas impurity discharging device comprises a gas inlet pipe and a distribution assembly for distributing gas from the gas inlet pipe, wherein the gas inlet pipe is connected with the distribution assembly. The distribution assembly disperses gas flow so as to relieve the impact of the gas flow on a silicone fluid surface, and meanwhile, the dispersed gas flow is not easy to from circulating gas flow in the ingot furnace, so that the staying time of the gas in a structure composed of a crucible, the protecting plate and a cover plate is shortened, the gas can be discharged as soon as possible, and the content of carbon, which is adsorbed and dissolved in silicon fluid, of the carbon-contained gas flowing through the surface of the silicon fluid is reduce. Therefore, the quality of a grown silicon ingot is higher.
Description
[technical field]
The utility model relates to a kind of air inlet trash discharging apparatus, particularly relates to a kind of air inlet trash discharging apparatus that is used for polycrystalline silicon ingot or purifying furnace.
[background technology]
The generation carbonaceous gas because the graphite material in the ingot furnace can at high temperature react with the quartz crucible that silicon-dioxide is processed is like CO, CO
2Deng, and the carbonaceous gas that is produced can make the carbon content in the polysilicon too high.The too high silicon solution that causes easily of carbon content forms impurity or defectives such as carbon precipitates, silit inclusion, dislocation in the polysilicon in the long brilliant process of directional freeze; This not only can increase the broken string accident and produce stria bad in the polycrystal silicon ingot cutting technique, but also the battery sheet leakage rate that can cause being made into is high, efficiency of conversion is low.So method commonly used is to feed rare gas element to discharge the carbonaceous gas that is produced at the ingot furnace top.Please refer to Fig. 1, this ingot furnace comprises crucible 11 and backplate 12, and backplate 12 tops are provided with cover plate 13, have air outlet 14 between backplate 12 and the cover plate 13, and a graphite long tube 15 is set on the cover plate 13.This graphite long tube 15 passes cover plate 13 and crucible 11 internal space conductings.Rare gas element gets into ingot furnace from graphite long tube 15, and reaches crucible 11 tops.The gas that gets into ingot furnace can not be discharged thermal field through air outlet 14 at once, but can in the structure that crucible 11, backplate 12, cover plate 13 are formed, circulate, and the surface of the silicon liquid of flowing through; Carbon is adsorbed and dissolves in the silicon liquid, thereby cause the carbon content in the silicon ingot that grows high.In addition, the gas that gets into ingot furnace also can cause gas to impacting in the silicon liquid set of surfaces, makes that a zonule is cold excessively, and crystal mass is caused detrimentally affect.
[utility model content]
The utility model provides a kind of air inlet trash discharging apparatus, and this air inlet trash discharging apparatus can effectively reduce the carbon content of the silicon ingot of growth, and weakens the impact of gas to silicon liquid surface, thus make growth silicon ingot higher quality arranged.
For solving the problems of the technologies described above; An embodiment of the utility model provides a kind of air inlet trash discharging apparatus that is used for polycrystalline silicon ingot or purifying furnace; Comprise inlet pipe and the shunt assembly that will shunt from the gas that inlet pipe is come in, said inlet pipe links to each other with said shunt assembly.
In a preferred embodiment; Said shunt assembly comprises a upper plate and a lower plate that is fixed on the upper plate; Form a cavity between said upper plate and the said lower plate; The production well of a plurality of apertures less than the aperture of inlet pipe is set on the said lower plate, and the gas that feeds inlet pipe is through discharging from said a plurality of production wells behind the said cavity.
In a preferred embodiment, said a plurality of production well is evenly distributed on the said lower plate.
In a preferred embodiment, the distance between said upper plate and the said lower plate is 0.5 centimetre to 10 centimetres.
In a preferred embodiment, said shunt assembly is a conical flow deflector, and said flow deflector forms a cone cavity that allows gas to pass through.
In a preferred embodiment, the drift angle angle of the circular cone that forms of said flow deflector is 5 to spend to 45 degree.
This air inlet trash discharging apparatus disperses air-flow through a shunt assembly that links to each other with inlet pipe is set below inlet pipe; Weaken impact like this to silicon liquid surface; The dispersive air-flow is not easy in ingot furnace, to form circulating current simultaneously; Thereby reduce the time that gas stops in the structure that crucible, backplate and cover plate are formed, gas can be discharged as early as possible, reduce the carbon content that is adsorbed and dissolves in silicon liquid when carbonaceous gas is flowed through silicon liquid surface.Like this, the silicon ingot that grows out just has higher quality.
[description of drawings]
Fig. 1 is used synoptic diagram for air inlet trash discharging apparatus and ingot furnace commonly used;
Fig. 2 is used synoptic diagram for air inlet trash discharging apparatus and the ingot furnace of an embodiment of the utility model;
Fig. 3 is used synoptic diagram for air inlet trash discharging apparatus and the ingot furnace of another embodiment of the utility model.
[embodiment]
Below in conjunction with accompanying drawing the preferred embodiment of the utility model is set forth in detail, thereby the protection domain of the utility model is made more explicit defining so that advantage of the utility model and characteristic can be easier to it will be appreciated by those skilled in the art that.
The preferred embodiments of the utility model provides a kind of air inlet trash discharging apparatus that is used for polycrystalline silicon ingot or purifying furnace.Be provided with backplate 22 in this ingot furnace, this air inlet trash discharging apparatus is arranged on this backplate 22 tops, is provided with air outlet 24 between this air inlet trash discharging apparatus and this backplate 22.This air inlet trash discharging apparatus comprises inlet pipe 25 and the shunt assembly 23 that will shunt from the gas that inlet pipe 25 is come in, and this inlet pipe 25 links to each other with this shunt assembly 23.Effect through shunt assembly 23 after gas is come in from inlet pipe 25 becomes the silicon liquid top in the dispersive air-flow arrival ingot furnace, impacts thereby can not cause to concentrate to silicon liquid, helps the crystalline growth.
To combine embodiment specifically to introduce this air inlet trash discharging apparatus below.
Embodiment 1
Please refer to Fig. 2, in this embodiment, ingot furnace comprises backplate 22, is provided with crucible 21 in the ingot furnace.This air inlet trash discharging apparatus is arranged on backplate 22 tops of ingot furnace, has air outlet 24 between air inlet trash discharging apparatus and the backplate 22.The shunt assembly 23 of this air inlet trash discharging apparatus comprises a upper plate 26 and a lower plate 27 that is fixed on the upper plate 26.Form a cavity 28 between this upper plate 26 and the lower plate 27, the production well 29 of a plurality of apertures less than the aperture of inlet pipe 25 is set on the lower plate 27, the gas that feeds inlet pipe 25 is discharged from these a plurality of production wells 29 through these cavity 28 backs.Upper plate 26 is sealed with lower plate 27 all around, arrives cavity 28 earlier after gas is come in from inlet pipe 25, after the shunting of production well 29, discharges then.Production well 29 can be evenly distributed on the lower plate 27, and the shape of production well 29 can be suitable shapes such as circle, ellipse are perhaps square.Distance between upper plate 26 and the lower plate 27 is 0.5 centimetre to 10 centimetres preferably.Can make the air-flow that arrives silicon liquid surface not too large and can preferably carbonaceous gas be discharged like this.Because the shunting action of production well 29, the air-flow that reaches the silicon liquid top in the crucible 21 comparatively disperses, and can not form to concentrate to silicon liquid surface and impact, and is beneficial to the crystalline growth.In addition; The dispersive air-flow can be full of the structure of being made up of crucible 21, backplate 22 and cover plate 23; Reduce gas circulation and stop in the structure that crucible 21, backplate 22 and cover plate 23 are formed; The quartz crucible that graphite material and silicon-dioxide in the ingot furnace the are processed carbonaceous gas that produces that at high temperature reacts can be discharged as early as possible, thereby reduces the carbon content that is adsorbed and dissolves in silicon liquid when carbonaceous gas is flowed through silicon liquid surface, improves the quality of the silicon ingot of growing.
Embodiment 2
Please refer to Fig. 3, the crucible 31 of this embodiment, backplate 32 and air outlet 34 are identical with crucible, backplate and air outlet among the embodiment 1, and the key distinction of this embodiment and embodiment 1 is shunt assembly.Shunt assembly among this embodiment is a conical flow deflector 33.This conical flow deflector 33 forms a circular cone.The inside of the circular cone that this conical flow deflector 33 forms is a cone cavity 38 that allows gas to pass through.The drift angle angle of the circular cone that this conical flow deflector 33 forms is 5 to spend to 45 degree.After gas is come in from inlet pipe 35; Can get in the conical cavity 38 that is formed by conical flow deflector 33, through the effect of conical flow deflector 33, the gas of coming in from inlet pipe 35 can be disperseed; Thereby make the air-flow that arrives silicon liquid surface not too large, and relatively evenly.Like this, disperse and comparatively uniform airflow can not form to concentrate and impact silicon liquid surface, be beneficial to the crystalline growth.In addition; The dispersive air-flow can reduce gas circulation and stop in the structure that crucible 31, backplate 32 and cover plate 33 are formed; At high temperature the react carbonaceous gas of generation of the quartz crucible that graphite material and silicon-dioxide in the ingot furnace are processed can be discharged as early as possible; Thereby reduce the carbon content that is adsorbed and dissolves in silicon liquid when carbonaceous gas is flowed through silicon liquid surface, improve the quality of the silicon ingot of growth.
The air inlet trash discharging apparatus of the utility model disperses air-flow through a shunt assembly that links to each other with inlet pipe is set below inlet pipe; Weaken impact like this to silicon liquid surface; The dispersive air-flow is not easy in ingot furnace, to form circulating current simultaneously; Thereby reduce the time that gas stops in the structure that crucible, backplate and cover plate are formed, gas can be discharged as early as possible, reduce the carbon content that is adsorbed and dissolves in silicon liquid when carbonaceous gas is flowed through silicon liquid surface.Like this, the silicon ingot that grows out just has higher quality.
The above embodiment has only expressed several kinds of embodiments of the utility model, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the utility model claim.Should be pointed out that for the person of ordinary skill of the art under the prerequisite that does not break away from the utility model design, can also make some distortion and improvement, these all belong to the protection domain of the utility model.Therefore, the protection domain of the utility model patent should be as the criterion with accompanying claims.
Claims (6)
1. an air inlet trash discharging apparatus that is used for polycrystalline silicon ingot or purifying furnace is characterized in that, said air inlet trash discharging apparatus comprises inlet pipe and the shunt assembly that will shunt from the gas that inlet pipe is come in, and said inlet pipe links to each other with said shunt assembly.
2. air inlet trash discharging apparatus according to claim 1; It is characterized in that; Said shunt assembly comprises a upper plate and a lower plate that is fixed on the upper plate; Form a cavity between said upper plate and the said lower plate, the production well of a plurality of apertures less than the aperture of inlet pipe is set on the said lower plate, the gas that feeds inlet pipe is through discharging from said a plurality of production wells behind the said cavity.
3. air inlet trash discharging apparatus according to claim 2 is characterized in that, said a plurality of production wells are evenly distributed on the said lower plate.
4. air inlet trash discharging apparatus according to claim 2 is characterized in that, the distance between said upper plate and the said lower plate is 0.5 centimetre to 10 centimetres.
5. air inlet trash discharging apparatus according to claim 1 is characterized in that, said shunt assembly is a conical flow deflector, and said flow deflector forms a cone cavity that allows gas to pass through.
6. air inlet trash discharging apparatus according to claim 5 is characterized in that, the drift angle angle of the circular cone that said flow deflector forms is 5 to spend to 45 degree.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220047131 CN202626351U (en) | 2012-02-14 | 2012-02-14 | Inlet gas impurity discharging device for polysilicon ingot furnace |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220047131 CN202626351U (en) | 2012-02-14 | 2012-02-14 | Inlet gas impurity discharging device for polysilicon ingot furnace |
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| Publication Number | Publication Date |
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| CN202626351U true CN202626351U (en) | 2012-12-26 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201220047131 Expired - Lifetime CN202626351U (en) | 2012-02-14 | 2012-02-14 | Inlet gas impurity discharging device for polysilicon ingot furnace |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103011552A (en) * | 2013-01-05 | 2013-04-03 | 连云港福东天佑照明电器有限公司 | Quartz rod continuous smelting furnace |
| CN106119957A (en) * | 2016-08-22 | 2016-11-16 | 浙江精功科技股份有限公司 | A kind of Dual-channel type ingot furnace argon inlet method |
| CN106929910A (en) * | 2015-12-30 | 2017-07-07 | 西安隆基硅材料股份有限公司 | Guide shell and the single crystal growing furnace thermal field with the guide shell |
| CN107385510A (en) * | 2016-02-03 | 2017-11-24 | 陈鸽 | A kind of polycrystalline silicon ingot or purifying furnace with guiding device |
| CN107541775A (en) * | 2016-02-03 | 2018-01-05 | 陈鸽 | A kind of guiding device for polycrystalline ingot furnace |
| CN108048903A (en) * | 2016-02-03 | 2018-05-18 | 陈鸽 | A kind of drainage system for changing carrier gas flow direction |
| CN109183148A (en) * | 2018-11-21 | 2019-01-11 | 晶科能源有限公司 | A kind of ingot furnace |
-
2012
- 2012-02-14 CN CN 201220047131 patent/CN202626351U/en not_active Expired - Lifetime
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103011552A (en) * | 2013-01-05 | 2013-04-03 | 连云港福东天佑照明电器有限公司 | Quartz rod continuous smelting furnace |
| CN106929910A (en) * | 2015-12-30 | 2017-07-07 | 西安隆基硅材料股份有限公司 | Guide shell and the single crystal growing furnace thermal field with the guide shell |
| CN106929910B (en) * | 2015-12-30 | 2018-10-16 | 隆基绿能科技股份有限公司 | Guide shell and single crystal growing furnace thermal field with the guide shell |
| CN107385510A (en) * | 2016-02-03 | 2017-11-24 | 陈鸽 | A kind of polycrystalline silicon ingot or purifying furnace with guiding device |
| CN107541775A (en) * | 2016-02-03 | 2018-01-05 | 陈鸽 | A kind of guiding device for polycrystalline ingot furnace |
| CN108048903A (en) * | 2016-02-03 | 2018-05-18 | 陈鸽 | A kind of drainage system for changing carrier gas flow direction |
| CN106119957A (en) * | 2016-08-22 | 2016-11-16 | 浙江精功科技股份有限公司 | A kind of Dual-channel type ingot furnace argon inlet method |
| CN109183148A (en) * | 2018-11-21 | 2019-01-11 | 晶科能源有限公司 | A kind of ingot furnace |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20121226 |
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| CX01 | Expiry of patent term |