CN200974872Y - Vertical pulling monocrystalline furnace having shielding gas control device - Google Patents
Vertical pulling monocrystalline furnace having shielding gas control device Download PDFInfo
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- CN200974872Y CN200974872Y CN 200620148936 CN200620148936U CN200974872Y CN 200974872 Y CN200974872 Y CN 200974872Y CN 200620148936 CN200620148936 CN 200620148936 CN 200620148936 U CN200620148936 U CN 200620148936U CN 200974872 Y CN200974872 Y CN 200974872Y
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Abstract
The utility model relates to a straight single crystal furnace with a shielding gas-controlled device, which is used in the growth of single crystal. The straight single crystal furnace with the shielding gas-controlled device includes a quartz crucible, a graphite crucible, a graphite heater, a graphite insulated sleeve, an insulation cover and a furnace wall. An air outlet is equipped on the upper part of the graphite insulated sleeve, and an inter-space channel of zero-emission is equipped between the graphite insulated sleeve and furnace wall; the upper part of the inter-space channel is connected to the air outlet of the upper of the graphite insulated sleeve, and the lower part of the inter-space channel is connected to the extract opening of the lower part of the furnace wall; a radiated and isolative draft tube is equipped between the graphite heater and the crystal. The utility model increases the forced convection of the shielding gas, improves the flowing line of the shielding gas, avoids the reaction of the silicon monoxide of the shielding gas with the graphite heater and the graphite crucible and so on, and increases the service life of the graphite heater and other accessories.
Description
Technical field
The utility model belongs to growing single-crystal silicon crystal technical field in melted silicon, relates to a kind of czochralski crystal growing furnace with protection gas control system device used in krousky (Czochralski) the single crystal growing method of cutting.
Background technology
The monocrystalline silicon growing technology has two kinds: zone melting method (FZ) and vertical pulling method (CZ); wherein vertical pulling method is widely used; in traditional vertical pulling method; high-purity polycrystalline raw material (6-11N) is put into quartz crucible; in rough vacuum heat fused under the slumpability gas shield is arranged then; cool the temperature to about 1420 degrees centigrade of silicon ctystallizing points after the fusing; there is one the silicon single crystal (being commonly called as crystal seed) of the direction of growth to contact with silicon solution; and then adjustment silicon solution temperature and crystal seed lift velocity; the thin neck that makes it about 1 diameter 3-6mm of slow crystallization formation makes Siliciumatom arrange according to the arrangement mode of crystal seed; after thin neck has certain-length; raising speed makes it slowly to grow up on adjustment silicon solution temperature and the crystal seed; when growing up near required diameter; promote the crystal seed lift velocity; make the growth of silicon single-crystal equal diameter; when the approaching end of silicon monocrystal growth; promote the crystal seed lift velocity and adjust solution temperature; the diameter of silicon single-crystal is slowly dwindled into a cone; when the diameter of cone during near the 10-15mm left and right sides; crystal and solution are broken away from, and the crystal growth cycle has just finished like this.
Pulling of silicon single crystal is in low vacuum state in the process of growth in single crystal growing furnace; and constantly in single crystal growing furnace, pour inert protective gas to take away since the crystallization latent heat that silicon single-crystal distributes during crystallization from solution and the silicon monoxide particle of silicon solution evaporation from the single crystal growing furnace bleeding point, discharge then (extracting out) with vacuum pump.The flow schematic diagram of shielding gas is seen Fig. 1 in the prior art.Single crystal growing furnace tradition thermal field is by plumbago crucible; graphite heater; graphite insulation sleeve; crucible pole; the crucible pallet; the insulation loam cake; (see figure 1) is made on the furnace chamber chassis; during single crystal growing; the position of aiming at the single crystal growing furnace bleeding point in graphite insulation lower cartridge has 2 venting ports about diameter 4-8cm; so that having silicon monoxide particulate shielding gas extracts out from venting port; will make gas stream through graphite heater like this; positions such as plumbago crucible; at this mixed gas in traditional thermal field of single crystal furnace discharge process; because these parts all are graphite products; and temperature very high (temperature is near 1500 degrees centigrade in the stove) in the stove, this will cause graphite product and silicon monoxide reaction and life-span of having reduced accessories such as graphite heater and plumbago crucible.In addition because silicon single-crystal will distribute crystallization latent heat (wanting distribute heat when liquid is converted into solid) during from growth from solution, but in traditional thermal field well heater directly with heat radiation to silicon single-crystal, be unfavorable for distributing of silicon single-crystal crystallization latent heat, slowed down the crystallization velocity of silicon single-crystal, to such an extent as to produce the remelting of silicon single crystal.Said remelting is meant in the silicon monocrystal growth process, when Siliciumatom can not be arranged according to the atomic arrangement mode of crystal seed, will be with the silicon single-crystal refuse, that carries out crystal seed and solution again contacts the neat silicon single-crystal of growth atomic arrangement, has increased energy expenditure and production cost like this.
The utility model content
Technical problem to be solved in the utility model is at existing above-mentioned deficiency in the prior art; a kind of czochralski crystal growing furnace with protection gas control system device is provided; the route of flowing through of control pulling of silicon single crystal shielding gas; so that improve the life-span of graphite accessories such as graphite heater, plumbago crucible and reduce silicon crystal melt back number of times; and increased the forced convection of shielding gas, saved the consumption of shielding gas.
Another technical problem to be solved in the utility model is to completely cut off the heat that well heater is radiated silicon crystal, is beneficial to the latent heat that distributes when silicon single-crystal distributes crystallization better faster, so that improve the speed of growth of silicon single-crystal.
The technical scheme that solution the technology of the present invention problem is adopted is that this czochralski crystal growing furnace with protection gas control system device comprises quartz crucible, plumbago crucible, graphite heater, graphite insulation sleeve, insulation loam cake, furnace wall; have venting port in graphite insulation upper cartridge; but the interstitial channels that waste discharge gas is arranged between graphite insulation sleeve and the furnace wall; the top of interstitial channels is connected with the venting port of graphite insulation upper cartridge, and the bottom of interstitial channels is communicated with the bleeding point of bottom, furnace wall.
Preferably the venting port that has in graphite insulation upper cartridge is 12 venting ports that the uniform distribution diameter is 5cm-8cm.
Further preferably between graphite heater and crystal, there is radiation to completely cut off guide shell; The isolated guide shell of radiation is the rounding frustum, top is big, and the bottom is little, and the isolated guide shell top of radiation is placed on above the insulation loam cake, the bottom reaches following 90mm-110mm place, graphite heater top, and the isolated guide shell end opening of radiation is apart from about the quartz crucible inner melt liquid level 10-30mm.
Shielding gas flow down from single crystal growing furnace top when the utility model can make single crystal growing; earlier through the isolated guide shell of the radiation of the rounding frustum liquation of flowing through; so that take away the silicon monoxide particle of solution evaporation; venting port from the insulation upper cartridge flows out then; interstitial channels between monocrystalline furnace wall and insulation sleeve flows to the single crystal growing furnace bottom, discharges from the single crystal growing furnace bleeding point then.Will increase the forced convection of shielding gas like this and improve the route of flowing through of shielding gas, avoid the silicon monoxide particle of shielding gas and the reaction of accessories such as graphite heater, plumbago crucible, increase accessory such as graphite heater work-ing life.The radiation excluder except that the route of flowing through that has improved shielding gas, also completely cut off well heater directly with heat radiation to crystal, so that the latent heat that silicon single-crystal produces when better distributing crystallization so that crystallization velocity is faster, has improved the production rate of silicon single-crystal.
Description of drawings
Fig. 1 is the czochralski crystal growing furnace structural representation in the present technology
Fig. 2 is a structural representation of the present utility model
Among the figure: the isolated guide shell 12-interstitial channels 13-crystal 14-melted silicon of 1-graphite insulation sleeve 2-graphite heater 3-crucible pallet 4-plumbago crucible 5-quartz crucible 6-insulation loam cake 7-crucible pole 8-furnace wall 9-bleeding point 10-venting port 11-radiation
Embodiment
As shown in Figure 2: graphite insulation sleeve 1 is set apart from monocrystalline furnace wall 3-4cm, the passage width that is the interstitial channels 12 between monocrystalline furnace wall 8 and the graphite insulation sleeve 1 is 3-4cm, graphite heater 2 is placed in the graphite insulation sleeve 1, plumbago crucible 4 is placed on the crucible pallet 3, quartz crucible 5 is placed in the plumbago crucible 4, venting port 10 is opened at distance graphite insulation 4-10cm place, sleeve 1 top, insulation loam cake 6 is placed on the graphite insulation sleeve 1, have venting port 10 on graphite insulation sleeve 1 top, but the interstitial channels 12 that waste discharge gas is arranged between graphite insulation sleeve 1 and the furnace wall 8, the last interface of interstitial channels 12 is connected with the venting port 10 on graphite insulation sleeve 1 top, and the bottom interface of interstitial channels 12 is communicated with the bleeding point 9 of 8 bottoms, furnace wall.There is radiation to completely cut off guide shell 11 between graphite heater 2 and the crystal 13, the isolated guide shell 11 of radiation is the rounding frustum, top is big, the bottom is little, the upper edge is placed on above the insulation loam cake 6, end opening extends following 90mm-110mm place, graphite heater 2 tops, makes liquid level apart from about the radiation excluder end opening 10-30mm.
During the utility model operation; shielding gas flows down from single crystal growing furnace top in the time of making single crystal growing; earlier through the isolated guide shell 11 of the radiation of the rounding frustum liquation liquid level of flowing through; so that take away liquation evaporable silicon monoxide particle; venting port 10 from insulation sleeve 1 top flows out then; interstitial channels 12 between monocrystalline furnace wall 8 and insulation sleeve 1 flows to the single crystal growing furnace bottom, is discharged by vacuum pump from single crystal growing furnace bleeding point 9 then.Increase the forced convection of shielding gas like this and improved the route of flowing through of shielding gas, avoided the reaction of the silicon monoxide particle and the accessories such as graphite heater 2, plumbago crucible 4 of shielding gas, prolonged accessory such as graphite heater work-ing life.The isolated guide shell 11 of radiation is except that the route of flowing through that has improved shielding gas; also completely cut off graphite heater 2 directly with heat radiation to crystal; the latent heat that produces when making silicon single-crystal better distribute crystallization; and the protected band of gas is walked; reduce silicon crystal melt back number of times; make crystallization velocity faster, improved the production rate of silicon single-crystal.And increased the forced convection of shielding gas, saved the consumption of shielding gas.
Claims (6)
1. czochralski crystal growing furnace with protection gas control system device; comprise quartz crucible (5), plumbago crucible (4), graphite heater (2), graphite insulation sleeve (1), insulation loam cake (6), furnace wall (8); it is characterized in that having venting port (10) on graphite insulation sleeve (1) top; graphite insulation sleeve (1) and furnace wall (8) but between the interstitial channels (12) of waste discharge gas is arranged; the top of interstitial channels (12) is connected with the venting port on graphite insulation sleeve (1) top, and the bottom of interstitial channels (12) is communicated with the bleeding point (9) of bottom, furnace wall.
2. the czochralski crystal growing furnace with protection gas control system device according to claim 1 is characterized in that the venting port (10) that graphite insulation sleeve (1) top has is 12 venting ports that the uniform distribution diameter is 5cm-8cm.
3. the czochralski crystal growing furnace with protection gas control system device according to claim 1 and 2 is characterized in that having radiation to completely cut off guide shell (11) between graphite heater (2) and crystal (13).
4. the czochralski crystal growing furnace with protection gas control system device according to claim 3 is characterized in that radiation completely cuts off guide shell (11) and is the rounding frustum, and top is big, and the bottom is little.
5. the czochralski crystal growing furnace with protection gas control system device according to claim 4 is characterized in that radiation completely cuts off guide shell (11) top and is placed on above the insulation loam cake (6), and the bottom reaches following 90mm-110mm place, graphite heater (2) top.
6. the czochralski crystal growing furnace with protection gas control system device according to claim 5 is characterized in that radiation completely cuts off guide shell (11) end opening apart from quartz crucible (5) inner melt liquid level 10-30mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620148936 CN200974872Y (en) | 2006-11-01 | 2006-11-01 | Vertical pulling monocrystalline furnace having shielding gas control device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620148936 CN200974872Y (en) | 2006-11-01 | 2006-11-01 | Vertical pulling monocrystalline furnace having shielding gas control device |
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| CN200974872Y true CN200974872Y (en) | 2007-11-14 |
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| CN 200620148936 Expired - Lifetime CN200974872Y (en) | 2006-11-01 | 2006-11-01 | Vertical pulling monocrystalline furnace having shielding gas control device |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101319351B (en) * | 2008-06-26 | 2010-04-21 | 常州中弘光伏有限公司 | Monocrystalline growing furnace |
| CN101319352B (en) * | 2008-06-26 | 2010-06-02 | 常州中弘光伏有限公司 | Vertical pulling type single crystal growth furnace |
| CN102011176A (en) * | 2010-11-30 | 2011-04-13 | 江苏华盛天龙光电设备股份有限公司 | Silicon single crystal growth furnace with gas cold traps |
| CN102011181A (en) * | 2010-12-24 | 2011-04-13 | 温州神硅电子有限公司 | Thermal field device for growing 8-inch silicon single crystals for solar energy by Czochralski method |
| CN102618921A (en) * | 2012-04-11 | 2012-08-01 | 浙江金瑞泓科技股份有限公司 | Double-exhaust flat-plate epitaxial furnace |
| CN102634848A (en) * | 2011-12-20 | 2012-08-15 | 元亮科技有限公司 | Pumping device for growth of garnet type single crystals |
| CN105525342A (en) * | 2015-12-22 | 2016-04-27 | 英利集团有限公司 | Method and monocrystal furnace for preparing large-size monocrystal silicon rod through Czochralski method |
| CN106894078A (en) * | 2017-02-16 | 2017-06-27 | 温州隆润科技有限公司 | Preparation device and preparation method of monocrystalline silicon wafer |
| CN108350603A (en) * | 2015-11-13 | 2018-07-31 | 胜高股份有限公司 | The manufacturing method of monocrystalline silicon |
| CN116951994A (en) * | 2023-07-31 | 2023-10-27 | 芯朋半导体科技(如东)有限公司 | Furnace body waste gas recovery device of semiconductor device |
-
2006
- 2006-11-01 CN CN 200620148936 patent/CN200974872Y/en not_active Expired - Lifetime
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101319351B (en) * | 2008-06-26 | 2010-04-21 | 常州中弘光伏有限公司 | Monocrystalline growing furnace |
| CN101319352B (en) * | 2008-06-26 | 2010-06-02 | 常州中弘光伏有限公司 | Vertical pulling type single crystal growth furnace |
| CN102011176A (en) * | 2010-11-30 | 2011-04-13 | 江苏华盛天龙光电设备股份有限公司 | Silicon single crystal growth furnace with gas cold traps |
| CN102011181B (en) * | 2010-12-24 | 2012-10-03 | 温州神硅电子有限公司 | Thermal field device for growing 8-inch silicon single crystals for solar energy by Czochralski method |
| CN102011181A (en) * | 2010-12-24 | 2011-04-13 | 温州神硅电子有限公司 | Thermal field device for growing 8-inch silicon single crystals for solar energy by Czochralski method |
| CN102634848A (en) * | 2011-12-20 | 2012-08-15 | 元亮科技有限公司 | Pumping device for growth of garnet type single crystals |
| CN102618921A (en) * | 2012-04-11 | 2012-08-01 | 浙江金瑞泓科技股份有限公司 | Double-exhaust flat-plate epitaxial furnace |
| CN102618921B (en) * | 2012-04-11 | 2015-06-03 | 浙江金瑞泓科技股份有限公司 | Double-exhaust flat-plate epitaxial furnace |
| CN108350603A (en) * | 2015-11-13 | 2018-07-31 | 胜高股份有限公司 | The manufacturing method of monocrystalline silicon |
| US10724150B2 (en) | 2015-11-13 | 2020-07-28 | Sumco Corporation | Method of manufacturing silicon single crystal |
| CN108350603B (en) * | 2015-11-13 | 2020-11-13 | 胜高股份有限公司 | Method for producing silicon single crystal |
| CN105525342A (en) * | 2015-12-22 | 2016-04-27 | 英利集团有限公司 | Method and monocrystal furnace for preparing large-size monocrystal silicon rod through Czochralski method |
| CN106894078A (en) * | 2017-02-16 | 2017-06-27 | 温州隆润科技有限公司 | Preparation device and preparation method of monocrystalline silicon wafer |
| CN116951994A (en) * | 2023-07-31 | 2023-10-27 | 芯朋半导体科技(如东)有限公司 | Furnace body waste gas recovery device of semiconductor device |
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| C14 | Grant of patent or utility model | ||
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| CX01 | Expiry of patent term |
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| EXPY | Termination of patent right or utility model |