CN202090106U - Air cooling device for polysilicon ingot furnace - Google Patents
Air cooling device for polysilicon ingot furnace Download PDFInfo
- Publication number
- CN202090106U CN202090106U CN2011200406036U CN201120040603U CN202090106U CN 202090106 U CN202090106 U CN 202090106U CN 2011200406036 U CN2011200406036 U CN 2011200406036U CN 201120040603 U CN201120040603 U CN 201120040603U CN 202090106 U CN202090106 U CN 202090106U
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- Prior art keywords
- quench system
- gas
- cooling device
- air cooling
- ingot furnace
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Abstract
The utility model relates to a device for growing silicon crystals through a casting process and aims at providing an air cooling device for a polysilicon ingot furnace. The air cooling device is arranged under a thermal field in the ingot furnace and is a graphite body, wherein an air channel is arranged in the air cooling device. The air cooling device which dissipates heat actively is added at the bottom of the thermal field, range of active heat-dissipation is controlled through adjusting air flow in an inflow device, accordingly heat-dissipation rate under the crystals can be controlled actively, and speed of growth of the crystals is effectively controlled.
Description
Technical field
The utility model relates to the device of casting growing silicon crystal, especially for the gas quench system of polycrystalline ingot furnace.
Background technology
The casting growing silicon crystal is that polysilicon is melted in crucible, guarantees the temperature in the thermal field and is suitable for the thermograde that crystal orientation solidifies by carbon felt or other kind lagging materials.And the control of the temperature in ingot casting silicon crystal process of growth then generally is the method reduction thermal field bottom temp by reducing heater power and promoting the thermal insulation layer position.This method has obtained widespread use in the production of ingot casting polycrystalline, but this is a kind of mode of passive heat radiation, and is often lower owing to radiating efficiency in the crystal growth later stage, causes crystal growth rate to reduce significantly.
The utility model content
The technical problems to be solved in the utility model is, overcomes deficiency of the prior art, and a kind of gas quench system that is used for the polycrystalline ingot furnace is provided.
Be the technical solution problem, scheme of the present utility model is:
A kind of gas quench system that is used for the polycrystalline ingot furnace is provided, is located at thermal field below in the ingot furnace, this gas quench system is the graphite body that inside has gas channel.
As a kind of improvement, described gas quench system is the graphite body that inside has the argon stream passage.
As a kind of improvement, the gas channel of described gas quench system is the reciprocal arrangements of " it " word.
As a kind of improvement, the gas channel of described gas quench system is " returning " font interleaved discs around layout.
As a kind of improvement, the rectangular circular shape in turning, turning point of described gas channel.
Using method of the present utility model is: rare gas element is entered from the inlet mouth of gas channel, and gas stream is through graphite body inside and take away heat, discharges from the air outlet of gas channel then.The temperature that feeds the rare gas element of graphite body gas channel is 24 ℃～28 ℃, and flow is 10～200slpm.Rare gas element can use argon gas.
The beneficial effects of the utility model are:
By increasing the gas quench system of an active heat removal in thermal field bottom, and by regulating the gas flow control active heat removal amplitude in the access equipment, control crystal below rate of heat release that can be is initiatively effectively controlled crystalline growth velocity.
The utility model can be used in the casting growing crystal silicon equipment, is used to control crystal below heat transfer rate, and this device also is applicable in the equipment of heat-exchanging method growing sapphire crystal.
Description of drawings
Fig. 1 is placed on synoptic diagram in the thermal field environment for gas quench system;
Fig. 2 is the gas channel synoptic diagram in the gas quench system;
Fig. 3 is the another kind of gas channel synoptic diagram in the gas quench system.
Reference numeral is among the figure: 1 well heater, 2 melt silicon, 3 heat conductors, 4 gas quench systems, 5 inlet mouths, 6 air outlets.
Embodiment
The utility model adopts graphite material to make gas quench system, and is placed on the below of well heater in the casting growing silicon crystal thermal field, air inlet/outlet is arranged on this device and be used for the gas channel that rare gas element passes through.In the present embodiment, the argon gas with steady temperature, setting flow in the use passes through gas channel, plays the effect of regulating heat radiation.
Embodiment 1
After polysilicon melts fully, reduce heater power gradually and make silicon melt begin crystallization from crucible bottom, along with crystal height increases, crystallisation process is reduced gradually by growth interface place heat transfer efficiency straight down, and crystal growth rate descends.Charge into argon gas by inlet mouth, temperature of argon gas is 24 ℃, and initial flow is 10slpm, the gas flow that raises gradually, and the heat-sinking capability of increase air-cooling apparatus makes crystal growth rate maintain constant level.Temperature of argon gas is general controlled to be made as 24 ℃～28 ℃, and flow is 10～200slpm.The gas channel of gas quench system inside can be the reciprocal arrangements of " it " word as required or be " returning " font interleaved discs around layout.For reducing the gas flow resistance, the turning, turning point of gas channel is designed to the right angle circular shape.
Embodiment 2
After polysilicon melts fully, beginning feeds argon gas in air-cooling apparatus, temperature of argon gas is 24 ℃, initial flow is 10slpm, along with argon flow amount increases, the crucible bottom heat-sinking capability strengthens, and melt begins from the crucible bottom crystallization, further increase argon flow amount and reduce heater power gradually, make crystal growth rate maintain constant level.
At last, it is also to be noted that what more than enumerate only is some specific embodiment of the present utility model.Obviously, the utility model is not limited to above examples of implementation, and many distortion can also be arranged.All distortion that those of ordinary skill in the art can directly derive or associate from the disclosed content of the utility model all should be thought protection domain of the present utility model.
Claims (6)
1. a gas quench system that is used for the polycrystalline ingot furnace is located at thermal field below in the ingot furnace, it is characterized in that this gas quench system is the graphite body that inside has gas channel.
2. gas quench system according to claim 1 is characterized in that, described gas quench system is the graphite body that inside has the argon stream passage.
3. according to any described gas quench system in claim 1 or 2, it is characterized in that the gas channel of described gas quench system is the reciprocal arrangements of " it " word.
4. gas quench system according to claim 3 is characterized in that, the rectangular circular shape in turning, turning point of described gas channel.
5. according to any described gas quench system in claim 1 or 2, it is characterized in that the gas channel of described gas quench system is " returning " font interleaved discs around layout.
6. gas quench system according to claim 5 is characterized in that, the rectangular circular shape in turning, turning point of described gas channel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200406036U CN202090106U (en) | 2011-02-17 | 2011-02-17 | Air cooling device for polysilicon ingot furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200406036U CN202090106U (en) | 2011-02-17 | 2011-02-17 | Air cooling device for polysilicon ingot furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202090106U true CN202090106U (en) | 2011-12-28 |
Family
ID=45365187
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011200406036U Expired - Lifetime CN202090106U (en) | 2011-02-17 | 2011-02-17 | Air cooling device for polysilicon ingot furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202090106U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102071454A (en) * | 2011-02-17 | 2011-05-25 | 浙江晶盛机电股份有限公司 | Gas cooling device and method used for polycrystalline ingot furnace |
| CN106222741A (en) * | 2016-08-31 | 2016-12-14 | 宜昌南玻硅材料有限公司 | One exempts from out heat-insulation cage ingot casting device and method |
-
2011
- 2011-02-17 CN CN2011200406036U patent/CN202090106U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102071454A (en) * | 2011-02-17 | 2011-05-25 | 浙江晶盛机电股份有限公司 | Gas cooling device and method used for polycrystalline ingot furnace |
| CN106222741A (en) * | 2016-08-31 | 2016-12-14 | 宜昌南玻硅材料有限公司 | One exempts from out heat-insulation cage ingot casting device and method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20111228 |