CN202601572U - 背接触薄片电池 - Google Patents

背接触薄片电池 Download PDF

Info

Publication number
CN202601572U
CN202601572U CN2010900007311U CN201090000731U CN202601572U CN 202601572 U CN202601572 U CN 202601572U CN 2010900007311 U CN2010900007311 U CN 2010900007311U CN 201090000731 U CN201090000731 U CN 201090000731U CN 202601572 U CN202601572 U CN 202601572U
Authority
CN
China
Prior art keywords
thin slice
solar cell
wafer
cell according
doped region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2010900007311U
Other languages
English (en)
Inventor
彼得·约翰·卡曾斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunPower Corp
Original Assignee
SunPower Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunPower Corp filed Critical SunPower Corp
Application granted granted Critical
Publication of CN202601572U publication Critical patent/CN202601572U/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

一种太阳能电池，使用硅晶片(101)的薄片(130)作为衬底。薄片(130)具有在正常操作期间面向太阳的正面。薄片(130)的正面包括来自沿晶片(101)的厚度的表面，从而允许更有效地使用硅。薄片(130)的背面上形成金属接触(114和115)。金属接触(114和115)电连接至太阳能电池的发射极和基极，太阳能电池的发射极和基极可以形成在薄片(130)内或者由多晶硅制成。例如，太阳能电池的发射极可以是P型掺杂区域(125)，太阳能电池的基极可以是N型掺杂区域(124)。太阳能电池还可以包括形成在所述薄片(130)的正面上的抗反射涂层(107)。抗反射涂层(107)可以位于薄片(130)的正面上的纹理表面之上。

Description

背接触薄片电池
技术领域
本发明通常涉及太阳能电池，更具体地，涉及但不限于太阳能电池的制造工艺和结构。
背景技术
太阳能电池是已知的用于将太阳辐射转换为电能的装置。薄片电池是由单晶硅薄片制成的太阳能电池。当前可得到的薄片电池通过微细加工延伸通过硅晶片的厚度的窄凹槽来制成。在从晶片切割下来的长片(即，薄片)上制造太阳能电池。与其他太阳能电池的设计相比，这允许使用较少的硅来制造薄片电池。可以从澳大利亚的OriginEnergy公司获得薄片电池。
实用新型内容
本公开涉及改进的薄片电池的设计和制造工艺。
太阳能电池使用硅晶片的薄片作为衬底。薄片具有在正常操作期间面对太阳的正面。薄片的正面包括始于沿晶片的厚度的表面，以允许硅的更有效使用。在薄片的背面上形成金属接触。金属接触电连接至太阳能电池的发射极和基极，太阳能电池可以形成在薄片内或者可以由多晶硅制成。例如，太阳能电池的发射极可以是P型掺杂区域，太阳能电池的基极可以是N型掺杂区域。太阳能电池可以包括形成在薄片的正面上的抗反射涂层。抗反射涂层可以在薄片正面上的纹理表面之上。
通过阅读本公开整体，包括附图和权利要求，本发明的这些和其他特征对本领域普通技术人员来说将显而易见。
附图说明
图1至图9示出了简要说明根据本发明的一个实施例的制造太阳能电池的方法的截面图。
图10简要示出了根据本发明的一个实施例的被处理为薄片电池的晶片的俯视图。
图11和图12示出了简要说明根据本发明的另一个实施例的制造太阳能电池的方法的截面图。
不同附图中使用的相同的参考标号表示相同或相似的部件。附图不按比例绘制。
具体实施方式
在本公开中，提供了许多具体细节，诸如材料、工艺步骤、和结构的示例，以提供对本发明的实施例的充分理解。但是，本领域中的普通技术人员将认识到，可以在没有所述具体细节中的一个或多个的情况下实践本发明。其他情况下，为了避免使本发明的方面模糊，没有示出和描述已知的细节。例如，为了清楚起见，省略了对本发明的理解不必要的遮蔽步骤和其他处理步骤。
图1至图9示出了简要说明根据本发明的一个实施例的制造太阳能电池的方法的截面图。由于所涉及的尺寸，图1至图9以及本公开中的剩余附图都不是按比例绘制的。下文中将更清楚的是，所得到的太阳能电池是背接触薄片电池，其中用于将外部电路电耦合至太阳能电池的掺杂区域的金属接触在薄片的背面上。薄片的正面与背面相反。由于正面被配置为在正常操作期间面对太阳来收集太阳辐射，因此正面也被称为“阳面”。
参考图1，N型单晶硅晶片101被准备用于通过经历损伤蚀刻步骤来处理为背接触薄片电池。晶片101在该示例中为晶片形式，由于晶片厂商使用剖锯工艺来从晶片坯料上切下晶片101，因此晶片101通常具有损伤的表面。如从晶片厂商收到的一样，晶片101可以为约100至200微米厚。在一个实施例中，损伤蚀刻步骤涉及使用包括氢氧化钾的湿法蚀刻工艺从晶片101的每个面上除去约10至20μm。损伤蚀刻步骤还可以包括对晶片101进行清洗，以除去金属污染。晶片101的相对的平面被标记为102和103。晶片101的厚度被标记为160。下文中将更清楚的是，薄片电池的正面包括始于沿晶片101的厚度的表面，其作为太阳能电池衬底。
在图2中，在图1的样品中形成偏移沟槽120和121。偏移沟槽可以通过任意合适的蚀刻过程来形成。在对晶片101进行蚀刻期间，晶片侧103可以被遮蔽，以形成沟槽120。之后，在对晶片101进行蚀刻期间，晶片侧102可以被遮蔽，以形成沟槽121。在图2的示例中，沟槽120和121在晶片101的厚度内停止，以在每个沟槽中创建分级的底表面。沟槽120和121还包括始于沿晶片101的厚度的壁表面。通过偏移晶片101的相对侧的沟槽120和121，晶片101的部分分离，并且每个部分具有分级的底表面。尺寸161和162之比可以根据设计参数来选择。例如，尺寸161可以为晶片厚度的三分之二(2/3)，而尺寸162可以为晶片厚度的三分之一(1/3)。
在典型的薄片电池工艺中，通过切割或蚀刻直通硅晶片的厚度的沟槽来制成垂直薄片。但是，由于需要遮蔽，因此该方法很难在所得到的壁表面上形成选择性扩散。通过偏移沟槽120和121，可以进行在沟槽侧壁上形成薄膜的视线处理。这有利地使得薄片电池容易被制造，很大程度上增大了薄片电池作为可再生能源的机会，使其变得更有竞争力。
在图3中，在晶片侧102的晶片101的暴露表面上形成掺杂二氧化硅层104形式的N型掺杂剂源。在一个实施例中，二氧化硅层104掺杂有磷。可以使用诸如常压化学气相沉淀方法(APCVD)之类的视线沉淀处理来沉淀厚度约1000至4000埃(优选地约2400埃)的二氧化硅层104。
在可选实施例中，代替在晶片101的暴露表面上形成二氧化硅层104，在晶片侧102的晶片101的暴露表面上沉淀第一掺杂的二氧化硅层。第一掺杂的二氧化硅层可以被沉淀为厚度约200至600埃，优选地约400埃。然后，在第一掺杂的二氧化硅层之上直接沉淀第一非掺杂的二氧化硅层，所述第一非掺杂的二氧化硅层的厚度约为2000至4000埃，优选地约为2000埃。在执行化学蚀刻来对所得到的薄片太阳能电池的阳面进行纹理化的情况下，第一非掺杂的氧化物层用作覆盖层。
沟槽120的底表面使得停止在相对晶片侧103的晶片101的表面上沉淀二氧化硅层104。如图4所示，这使得可以在晶片侧103的暴露表面上形成掺杂二氧化硅层105形式的P型掺杂剂源。在一个实施例中，二氧化硅层105掺杂有硼。沟槽121的底表面使得停止在相对侧102的表面上沉淀二氧化硅层105。这极大地简化了形成掺杂剂源所需的遮蔽步骤。可以使用诸如APCVD之类的视线沉淀处理来沉淀厚度约1000至4000埃(优选地约2400埃)的二氧化硅层105。代替形成单二氧化硅层105，可以在晶片侧103的暴露表面上形成由第二更厚的非掺杂二氧化硅层(作为覆盖层)覆盖其上的第一薄掺杂的二氧化硅层。
视线沉淀处理的使用有利地允许在P型和N型区域之间的角处形成连续或不间断的沟槽。这种沟槽可以允许在具有相对低的反向击穿电压的同时提高效率。
在图5中，形成垂直对准的沟槽122，使其完全穿过晶片101的厚度，从而产生晶片薄片130(即，130-1、130-2、130-3、…)。可以通过适当的蚀刻工艺(包括通过激光蚀刻和化学蚀刻)来形成垂直对准的沟槽122。可以执行选择性蚀刻来留下特定的晶格平面作为最终的暴露阳面。此时，每个晶片薄片130仍然附着在晶片上。图10简要示出了该结构，其中以晶片侧102在上示出了晶片101的俯视图。将被用作薄片的背面的偏移沟槽120和121的垂直壁表面与页面垂直。在处理期间，薄片130可以保持附着在晶片101的一端，直到将它们从晶片101物理分离来喷镀金属为止。
垂直于图10的页面的沟槽122的壁表面用作所得到的双面薄片电池的主太阳辐射收集表面。沟槽122的壁表面将被配置为在正常操作期间面向太阳。与将晶片的平面用作主太阳辐射收集表面的传统太阳能电池不同，薄片电池使用沿晶片厚度的壁表面作为主收集表面。这有利地增大了可以从晶片获得的收集表面的量。
在图6中，沟槽122的壁表面被纹理化，以改进太阳辐射收集。纹理化的壁表面被标记为纹理表面123，其在正常操作期间面向太阳。但是，注意，所得到的薄片电池是双面的，即，从薄片电池的两侧收集太阳辐射。纹理表面123还被称为薄片电池的“正面”或“阳面”。与正面相反的面被称为背面。在一个实施例中，为了有效和审美的原因，到薄片电池的掺杂区域的所有金属接触都在背面上。可以通过等离子蚀刻来形成纹理表面123。可替换地，纹理表面123可以包括使用具有Z字形图案的掩模蚀刻的微结构。
在图7中，形成正面域126以及掺杂区域124和125。正面域126以及掺杂区域124和125可以在使图6的样品经受高温的热驱入步骤中形成。例如，可以在包括磷围绕物的火炉中加热图6的样品。火炉中的磷扩散通过薄片的两侧，以形成N型正面域126。热驱入步骤还使N型掺杂剂从掺杂二氧化硅124扩散到晶片101中，从而形成N型掺杂区域124。类似地，热驱入步骤还使P型掺杂剂从掺杂二氧化硅125扩散到晶片101中，以形成P型掺杂区域125。该示例中，假设晶片101是N型硅晶片，N型掺杂区域124和P型掺杂区域125分别形成所得到的薄片电池的基极和发射极。发射极收集少数载流子，基极收集薄片电池中的多数载流子。使用N型硅晶片101，电子为多数载流子，并且被收集在掺杂区域124中，而空穴为少数载流子，并且被收集在掺杂区域125中。
在图8中，在图7的样品的表面上形成氮化硅层107形式的抗反射涂层(ARC)和防潮层。如图8中所示，氮化硅层107覆盖每个晶片薄片130的所有表面。氮化硅层107可以通过例如PECVD被形成为厚度约400至700埃，优选地约500埃。
图8中，薄片130可以保持附着到晶片101的一端(参见图10)。为了喷镀金属，每个薄片130可以通过例如激光或机械刻图来与晶片101的剩余部分物理分离。这使得金属接触可以容易地形成在所得到的薄片电池的背面上。
图9示出了与晶片101的剩余部分物理分离之后的薄片130。在穿过氮化硅层107和二氧化硅层104的接触孔中形成金属接触114，以与N型掺杂区域124接触。类似地，在穿过氮化硅层107和二氧化硅层105的接触孔中形成金属接触115，以与P型掺杂区域125接触。金属接触114和115可以包括叉指型金属接触，并且形成在薄片130的背面上。不存在电耦合到正面上的掺杂区域的金属接触有利地允许太阳辐射具有到薄片电池的正面的清晰路径。所有的背接触设计还可以改进薄片电池的美学效果，这在住宅应用中是重要的特征。金属接触114和115可以耦合到接收通过薄片电池产生的电流的外部电路。
与传统的太阳能电池的结构不同，图9的改进的薄片电池具有太阳能电池衬底，其中正面包括始于沿硅晶片的厚度的表面，而不包括沿硅晶片的平面的表面。与传统太阳能电池的等效阳面面积相比，当多个改进的薄片电池彼此相邻地放置并且其阳面朝向相同平面时，具有较大的p-n结界面面积。该改进的薄片电池结构也不同于使用前接触和后接触的传统薄片电池取向。传统的薄片电池取向可能在电池的阳面上引入阴影，或者在薄片电池的纵向端处具有接触，从而强迫载流子从主体中心到接触行进较长的距离，这回导致更低的效率。改进的薄片电池可以具有约1mm的宽度、约10mm的长度、以及约50微米的高度。改进的薄片电池使得可以更有效地使用晶片，这与传统的太阳能电池不同，传统的太阳能电池具有始于晶片的平面的连续正表面。
上述薄片电池在晶片101中具有掺杂区域124和125，即基极和发射极。可替换地，还可以使用在晶片101的外部形成的掺杂区域来制造薄片电池。掺杂区域可以在形成在晶片101之上的材料层中。其他处理步骤与图1至图9中的相同。例如，可以从图2得出图11。在图11中，在晶片101的表面上形成薄氧化物层201。氧化物层201可以包括在晶片101的表面上热生长为厚度小于或等于40埃(即，在5至40埃之间，优选地为10埃)的二氧化硅。之后，在氧化物层201上形成多晶硅层202。多晶硅层202(此阶段为非掺杂的)提供了其中将形成掺杂区域的材料层。根据图11，考虑到每个薄片130上存在氧化物层201和多晶硅层202，处理继续与图4至图9中的相同。
一般来说，如前所述，代替单P型或N型掺杂层，可以使用由非掺杂覆盖层覆盖的具有P型掺杂或N型掺杂层的两层工艺。
参考图12，随后的热驱入步骤导致来自掺杂剂源124的N型掺杂剂和来自掺杂剂源125的P型掺杂剂扩散到多晶硅层202中。其中扩散入N型掺杂剂的多晶硅层202的部分导致(并且因此被标记为)N型掺杂区域224。其中扩散入P型掺杂剂的多晶硅层202的部分导致(并且因此被标记为)P型掺杂区域225。在晶片101包括N型硅晶片的该示例中，N型掺杂区域224和P型掺杂区域225分别为薄片电池的基极和发射极。与图9的薄片电池不同，图12的薄片电池的基极和发射极在晶片101的外部。在图12的示例中，基极和发射极形成在多晶硅层202中。
仍然参考图12，在穿过氮化硅层107和二氧化硅层104的接触孔中形成金属接触114，以与N型掺杂区域224电接触。类似地，在穿过氮化硅层107和二氧化硅层105的接触孔中形成金属接触115，以与P型掺杂区域225电接触。金属接触114和115可以包括叉指型金属接触，并且形成在薄片130的背面上。
已经公开了高效率的薄片电池。尽管已经提供了本发明的具体实施例，但是应该理解的是，这些实施例仅用于说明的目的而非限制的目的。阅读本公开之后，许多其他实施例对本领域普通技术人员来说将显而易见。

Claims (14)

1.一种太阳能电池，包括：
硅晶片的薄片，所述薄片具有正面和背面，所述薄片的正面被配置为在正常操作期间面向太阳，所述薄片的背面与薄片的正面相 反，所述薄片的正面包括来自沿所述硅晶片的厚度的表面；
第一掺杂区域，配置为所述太阳能电池的基极；
第二掺杂区域，配置为所述太阳能电池的发射极；以及
第一金属接触和第二金属接触，形成在所述薄片的背面上，第一金属接触电耦合至第一掺杂区域，第二金属接触电耦合至第二掺杂区域。
2.根据权利要求1所述的太阳能电池，其中所述第一和第二掺杂区域包括形成在所述薄片与所述第一和第二金属接触之间的多晶硅。
3.根据权利要求2所述的太阳能电池，还包括：
电介质层，位于所述多晶硅与所述薄片的背面之间。
4.根据权利要求1所述的太阳能电池，其中所述第一掺杂区域包括N型区域，所述第二掺杂区域包括P型区域。
5.根据权利要求4所述的太阳能电池，其中所述N型区域包括磷。
6.根据权利要求4所述的太阳能电池，其中所述P型区域包括硼。
7.根据权利要求1所述的太阳能电池，其中所述薄片的正面具有纹理表面。 
8.根据权利要求7所述的太阳能电池，还包括：
抗反射涂层，形成在所述薄片的正面上的纹理表面之上。
9.根据权利要求1所述的太阳能电池，其中所述第一和第二掺杂区域形成在所述薄片内。
10.根据权利要求1所述的太阳能电池，其中所述硅晶片为N型。
11.一种太阳能电池，包括：
硅晶片的薄片，所述薄片具有正面和背面，所述薄片的正面被配置为在正常操作期间面向太阳，所述薄片的背面与所述薄片的正面相反，所述薄片的正面包括来自沿所述硅晶片的厚度的表面；
太阳能电池的基极；
太阳能电池的发射极；
叉指型第一和第二金属接触，形成在所述薄片的背面上，第一金属接触电耦合至所述基极，第二金属接触电耦合至所述发射极；以及
抗反射涂层，形成在所述薄片的正面之上。
12.根据权利要求11所述的太阳能电池，其中所述基极和发射极包括多晶硅。
13.根据权利要求12所述的太阳能电池，还包括：
二氧化硅层，形成在所述薄片与所述多晶硅之间。
14.根据权利要求11所述的太阳能电池，其中所述基极和发射极形成在所述薄片中。 
CN2010900007311U 2009-02-24 2010-01-19 背接触薄片电池 Expired - Fee Related CN202601572U (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/392,003 2009-02-24
US12/392,003 US9070804B2 (en) 2009-02-24 2009-02-24 Back contact sliver cells
PCT/US2010/021406 WO2010098907A1 (en) 2009-02-24 2010-01-19 Back contact sliver cells

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN2012205599523U Division CN202948939U (zh) 2009-02-24 2010-01-19 背接触薄片电池

Publications (1)

Publication Number Publication Date
CN202601572U true CN202601572U (zh) 2012-12-12

Family

ID=42229721

Family Applications (2)

Application Number Title Priority Date Filing Date
CN2010900007311U Expired - Fee Related CN202601572U (zh) 2009-02-24 2010-01-19 背接触薄片电池
CN2012205599523U Expired - Fee Related CN202948939U (zh) 2009-02-24 2010-01-19 背接触薄片电池

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN2012205599523U Expired - Fee Related CN202948939U (zh) 2009-02-24 2010-01-19 背接触薄片电池

Country Status (5)

Country Link
US (1) US9070804B2 (zh)
EP (1) EP2401758A1 (zh)
KR (1) KR101655249B1 (zh)
CN (2) CN202601572U (zh)
WO (1) WO2010098907A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107851672A (zh) * 2015-06-30 2018-03-27 夏普株式会社 光电转换元件

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8409911B2 (en) * 2009-02-24 2013-04-02 Sunpower Corporation Methods for metallization of solar cells
WO2010118479A1 (en) * 2009-04-17 2010-10-21 Transform Solar Pty Ltd Elongate solar cell and edge contact
JP5845445B2 (ja) * 2010-01-26 2016-01-20 パナソニックＩｐマネジメント株式会社 太陽電池及びその製造方法
KR101888547B1 (ko) * 2011-11-08 2018-08-16 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 태양 전지 및 이의 제조 방법
US8822262B2 (en) 2011-12-22 2014-09-02 Sunpower Corporation Fabricating solar cells with silicon nanoparticles
EP3093889B1 (en) * 2015-05-13 2024-04-17 Shangrao Xinyuan YueDong Technology Development Co. Ltd Solar cell and method of manufacturing the same
KR102550458B1 (ko) * 2015-05-13 2023-07-04 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 태양 전지 및 이의 제조 방법
USD822890S1 (en) 2016-09-07 2018-07-10 Felxtronics Ap, Llc Lighting apparatus
US10775030B2 (en) 2017-05-05 2020-09-15 Flex Ltd. Light fixture device including rotatable light modules
USD833061S1 (en) 2017-08-09 2018-11-06 Flex Ltd. Lighting module locking endcap
USD846793S1 (en) 2017-08-09 2019-04-23 Flex Ltd. Lighting module locking mechanism
USD862777S1 (en) 2017-08-09 2019-10-08 Flex Ltd. Lighting module wide distribution lens
USD832494S1 (en) 2017-08-09 2018-10-30 Flex Ltd. Lighting module heatsink
USD872319S1 (en) 2017-08-09 2020-01-07 Flex Ltd. Lighting module LED light board
USD877964S1 (en) 2017-08-09 2020-03-10 Flex Ltd. Lighting module
USD832495S1 (en) 2017-08-18 2018-10-30 Flex Ltd. Lighting module locking mechanism
USD862778S1 (en) 2017-08-22 2019-10-08 Flex Ltd Lighting module lens
USD888323S1 (en) 2017-09-07 2020-06-23 Flex Ltd Lighting module wire guard
CN116936684B (zh) * 2023-09-14 2023-12-15 金阳(泉州)新能源科技有限公司 电池正背面同时生长不同厚度多晶硅的方法和背接触电池

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3961997A (en) 1975-05-12 1976-06-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Fabrication of polycrystalline solar cells on low-cost substrates
US4200472A (en) * 1978-06-05 1980-04-29 The Regents Of The University Of California Solar power system and high efficiency photovoltaic cells used therein
US4478879A (en) 1983-02-10 1984-10-23 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Screen printed interdigitated back contact solar cell
US4927770A (en) 1988-11-14 1990-05-22 Electric Power Research Inst. Corp. Of District Of Columbia Method of fabricating back surface point contact solar cells
US5217539A (en) 1991-09-05 1993-06-08 The Boeing Company III-V solar cells and doping processes
US5053083A (en) 1989-05-08 1991-10-01 The Board Of Trustees Of The Leland Stanford Junior University Bilevel contact solar cells
US5030295A (en) 1990-02-12 1991-07-09 Electric Power Research Institut Radiation resistant passivation of silicon solar cells
US5057439A (en) 1990-02-12 1991-10-15 Electric Power Research Institute Method of fabricating polysilicon emitters for solar cells
US5164019A (en) 1991-07-31 1992-11-17 Sunpower Corporation Monolithic series-connected solar cells having improved cell isolation and method of making same
US5360990A (en) 1993-03-29 1994-11-01 Sunpower Corporation P/N junction device having porous emitter
US5369291A (en) 1993-03-29 1994-11-29 Sunpower Corporation Voltage controlled thyristor
DE19508712C2 (de) 1995-03-10 1997-08-07 Siemens Solar Gmbh Solarzelle mit Back-Surface-Field und Verfahren zur Herstellung
US5641362A (en) 1995-11-22 1997-06-24 Ebara Solar, Inc. Structure and fabrication process for an aluminum alloy junction self-aligned back contact silicon solar cell
US6552414B1 (en) 1996-12-24 2003-04-22 Imec Vzw Semiconductor device with selectively diffused regions
US5956571A (en) * 1997-05-02 1999-09-21 Yang; Mei-Hua Solar battery with thin film type of single crystal silicon
US6387726B1 (en) 1999-12-30 2002-05-14 Sunpower Corporation Method of fabricating a silicon solar cell
US6337283B1 (en) 1999-12-30 2002-01-08 Sunpower Corporation Method of fabricating a silicon solar cell
US6274402B1 (en) 1999-12-30 2001-08-14 Sunpower Corporation Method of fabricating a silicon solar cell
US6423568B1 (en) 1999-12-30 2002-07-23 Sunpower Corporation Method of fabricating a silicon solar cell
US6313395B1 (en) 2000-04-24 2001-11-06 Sunpower Corporation Interconnect structure for solar cells and method of making same
US6333457B1 (en) 2000-08-29 2001-12-25 Sunpower Corporation Edge passivated silicon solar/photo cell and method of manufacture
AUPR174800A0 (en) 2000-11-29 2000-12-21 Australian National University, The Semiconductor processing
JP2002305311A (ja) 2001-01-31 2002-10-18 Shin Etsu Handotai Co Ltd 太陽電池の製造方法および太陽電池
US7388147B2 (en) 2003-04-10 2008-06-17 Sunpower Corporation Metal contact structure for solar cell and method of manufacture
US6998288B1 (en) 2003-10-03 2006-02-14 Sunpower Corporation Use of doped silicon dioxide in the fabrication of solar cells
US20070277810A1 (en) 2004-01-23 2007-12-06 Origin Energy Solar Pty Ltd Solar Panel
US20080223429A1 (en) 2004-08-09 2008-09-18 The Australian National University Solar Cell (Sliver) Sub-Module Formation
US20060130891A1 (en) * 2004-10-29 2006-06-22 Carlson David E Back-contact photovoltaic cells
JP5193605B2 (ja) 2005-01-27 2013-05-08 トランスフォーム ソーラー ピーティワイ リミテッド 光電池パネル
US8010326B2 (en) 2005-12-28 2011-08-30 Caterpillar Inc. Method and apparatus for automated grid formation in multi-cell system dynamics models
EP1863100A1 (en) 2006-05-30 2007-12-05 INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM vzw (IMEC) Method for the production of thin substrates
WO2007127103A2 (en) 2006-04-27 2007-11-08 Intematix Corporation Systems and methods for enhanced solar module conversion efficiency
AU2007202184A1 (en) 2006-08-09 2008-02-28 Ian Robert Edmonds Photovoltaic window panel with high viewing transparency
GB2459274A (en) 2008-04-15 2009-10-21 Renewable Energy Corp Asa Wafer based solar panels

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107851672A (zh) * 2015-06-30 2018-03-27 夏普株式会社 光电转换元件
US10665731B2 (en) 2015-06-30 2020-05-26 Sharp Kabushiki Kaisha Photoelectric conversion element

Also Published As

Publication number Publication date
KR20110118135A (ko) 2011-10-28
CN202948939U (zh) 2013-05-22
KR101655249B1 (ko) 2016-09-07
US20100139745A1 (en) 2010-06-10
WO2010098907A1 (en) 2010-09-02
EP2401758A1 (en) 2012-01-04
US9070804B2 (en) 2015-06-30

Similar Documents

Publication Publication Date Title
CN202601572U (zh) 背接触薄片电池
CN102870225B (zh) 背接触太阳能电池的制造方法
US9564551B2 (en) Method of manufacturing a hybrid emitter all back contact solar cell
CN201812825U (zh) 具有形成的发射极的前触点太阳能电池
CN202855744U (zh) 用于太阳能电池的金属化的系统和太阳能电池阵列
US7468485B1 (en) Back side contact solar cell with doped polysilicon regions
KR100997113B1 (ko) 태양전지 및 그의 제조방법
JP2006120945A (ja) 太陽電池セルおよび太陽電池モジュール
CN102122679B (zh) 薄膜太阳能电池结构、薄膜太阳能电池阵列及其制造方法
KR101093114B1 (ko) 후면접합 구조의 태양전지
JP2005260157A (ja) 太陽電池セルおよび太陽電池モジュール
JP5029921B2 (ja) 太陽電池セルの製造方法
CN107155378B (zh) 光电动势装置的制造方法
CN105990457B (zh) 光电元件、包含其的太阳能电池
CN103178152A (zh) 结晶硅太阳能电池的制造方法

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20121212

Termination date: 20160119

EXPY Termination of patent right or utility model