JP5193605B2 - 光電池パネル - Google Patents
光電池パネル Download PDFInfo
- Publication number
- JP5193605B2 JP5193605B2 JP2007552462A JP2007552462A JP5193605B2 JP 5193605 B2 JP5193605 B2 JP 5193605B2 JP 2007552462 A JP2007552462 A JP 2007552462A JP 2007552462 A JP2007552462 A JP 2007552462A JP 5193605 B2 JP5193605 B2 JP 5193605B2
- Authority
- JP
- Japan
- Prior art keywords
- subassembly
- panel according
- photovoltaic panel
- support medium
- photovoltaic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000012545 processing Methods 0.000 claims description 9
- 239000003365 glass fiber Substances 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 7
- 229920005989 resin Polymers 0.000 claims description 7
- 239000011347 resin Substances 0.000 claims description 7
- 239000011810 insulating material Substances 0.000 claims description 6
- 229920000728 polyester Polymers 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 4
- XUCNUKMRBVNAPB-UHFFFAOYSA-N fluoroethene Chemical compound FC=C XUCNUKMRBVNAPB-UHFFFAOYSA-N 0.000 claims description 4
- 229920003023 plastic Polymers 0.000 claims description 4
- 239000004033 plastic Substances 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 claims description 3
- 229920002313 fluoropolymer Polymers 0.000 claims description 3
- 239000004811 fluoropolymer Substances 0.000 claims description 3
- 230000007246 mechanism Effects 0.000 claims description 3
- 239000012212 insulator Substances 0.000 claims description 2
- 230000002787 reinforcement Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 description 33
- 230000008569 process Effects 0.000 description 18
- 239000000853 adhesive Substances 0.000 description 16
- 230000001070 adhesive effect Effects 0.000 description 16
- 239000000758 substrate Substances 0.000 description 12
- 239000010949 copper Substances 0.000 description 9
- 239000000047 product Substances 0.000 description 9
- 229910000679 solder Inorganic materials 0.000 description 8
- 239000011521 glass Substances 0.000 description 6
- 238000003475 lamination Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229920002620 polyvinyl fluoride Polymers 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000005038 ethylene vinyl acetate Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000002985 plastic film Substances 0.000 description 3
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 239000006071 cream Substances 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000013067 intermediate product Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920006255 plastic film Polymers 0.000 description 2
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 229920006355 Tefzel Polymers 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- QHSJIZLJUFMIFP-UHFFFAOYSA-N ethene;1,1,2,2-tetrafluoroethene Chemical compound C=C.FC(F)=C(F)F QHSJIZLJUFMIFP-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
- B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
- B32B17/10009—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets
- B32B17/10018—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets comprising only one glass sheet
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
- B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
- B32B17/1055—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer
- B32B17/10788—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer containing ethylene vinylacetate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
- H01L31/0201—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
- H01L31/188—Apparatus specially adapted for automatic interconnection of solar cells in a module
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2327/00—Polyvinylhalogenides
- B32B2327/12—Polyvinylhalogenides containing fluorine
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Description
図1は、スライバーサブアセンブリ100の概要を示す。このスライバーサブアセンブリ100は、多数の細長半導体ストリップ110(すなわち、スライバー)を含む。これらの半導体ストリップ110は、支持媒体120上で平行に配置されている。図示を容易にするため、図1では4個のスライバー110のみを図示している。半導体材料のスライバー110の材料となるウエハは、例えば単結晶シリコンまたは多結晶シリコンであればよい。しかし、本発明の範囲および意図から逸脱することなく他の半導体材料も実施可能である。ひとえに例示目的のため、スライバーの特定構成を一例として示す。各スライバーは、長さが約40mm〜約200mm、幅が約0.3mm〜約2.0、厚さが約10μm〜約300μmであればよい。上記の範囲は、スライバー(または細長半導体ストリップ)の相対的サイズを広範に示すために提供したものである。これらのスライバーは極めて薄い。
−金属(例えば、銅、銀、合金)
−セラミック(例えば、シリカ炭化物またはアルミナ)
−透明フッ化ビニル樹脂(PVF)(例えば、TEDLAR(登録商標)(製造元:DuPont)(リボン、フィルムまたはシート状)
−透明ポリエステル(例えば、フィルム状)
−透明フッ素重合体フィルム(ETFE)(例えば、TEFZEL(登録商標)(製造元:DuPont)またはAFLEX(例えば、リボンまたはシート状)
−その他のプラスチック
−ポリイミドフィルム(例えば、KAPTON(登録商標)(製造元:DuPont)(例えば、リボンまたはフィルム状))。KAPTON(登録商標)は、400°Cまでの温度に耐えることができる。
−ゴム
上記にて列挙した支持媒体120用の材料に加えて、他の多数の材料を用いてもよい。他の使用可能な材料としては、例えば、積層プロセスにおける約1000℃〜約170℃の処理温度、半田付けにおける約200℃〜約250℃の処理温度、または硬化における約1000℃〜約200℃の処理温度に耐えることのできる材料がある。この支持媒体は、これらの処理温度に耐えることができる必要はない。なぜならば、積層、硬化などにおいて、多様な室温材料および方法が使用可能であるからである(例えば、積層時における室温硬化型のシリコン、樹脂またはポタントの使用)。さらに、より高温で処理される支持媒体の場合、唯一の要件は、処理工程後において当該支持媒体がサブアセンブリの機能を損なわない、または有意に損なわないことである。例えば、支持媒体は、積層後にサブアセンブリを支持する必要は無く(積層体が支持を提供するため)、サブアセンブリの機能を損なわないだけでよい。詳細には、支持媒体は、積層時に「溶解」する、または積層媒体になればよい。
−導電性ポリマー、−導電性プラスチック
−導電性インク、
−導電性酸化物
−導電性エポキシ、または、
−半田
本発明の範囲および意図から逸脱することなく、導電性部位1030用に他の導電性材料を用いることもできる。
図6は、本発明のさらなる実施形態による、タブ付きスライバーサブアセンブリ100の一対600を示す。各サブアセンブリ100は、図1に示すような様式でトラック上に構成された多数のスライバーを有する。サブアセンブリ100の対向端子端(長さ方向)において、サブアセンブリ100を相互接続させる導電性タブ610がある。これらの導電性タブ610は、導電性金属(例えば、銅(Cu)、銀(Ag)、銅およびスズ(Cu+Sn)、金(Au))のストリップを含み得る。このようなタブは、当業者に周知である。これらのタブは、スライバー電池を別のスライバー電池に接続する際に用いられる方法および材料と同一のものを用いて、スライバー電池に電気的に接続することができる。(例えば、これらのタブは、平行配列中の別の要素である)。他の技術(例えば、ワイヤボンディング)を用いてもよい。同様に、これらのタブは、支持媒体によって保持してもよいし、あるいは保持しなくてもよい。
タブ付きサブアセンブリの構築により、本サブアセンブリを、従来の太陽電池に直接代替するものとして用いることができる。架線マシンおよびレイアップマシンを用いて、(並列または直列に、直線状または角部周囲において屈曲した様態などで)サブアセンブリのうち1つのタブを隣のサブアセンブリのタブに相互接続することができ、サブアセンブリのストリングを生成することができる。
モジュール式サブアセンブリの組み立ておよび可能な材料(例えば、導電性相互接続)については、多数の方法が存在する。ここではそのうち数例のみについて説明するが、半導体業界または他業界において用いられる以下のような従来のプロセスおよび機器の多くを用いることができる。
−ピックアンドプレース機器
−ダイ取り付け機器、ワイヤボンダ
−スクリーン印刷
−ステンシル印刷
−分配
−ピン移送
−パッド印刷−スタンプ
−リフロー
−ウェーブ半田処理
モジュール式サブアセンブリの組立方法の第1の例は、特許文献1の外延を含む。同文献では、支持媒体(リボン、トラック、フィルムなどを含む)上にスライバーバンクを組み立てることについての記載がある。支持媒体は、単一体に供給することができ、(例えば、真空により)保持し、配置作業のためにより高剛性の支持体に一時的に接着することができる。あるいは、ロール状の材料を支持媒体に用い、サブアセンブリをロールツーロールで形成することもできる。スライバーを支持媒体に接着する際に接着剤を用いることができ、接着剤は、多数の公知技術(例えば、印刷、スタンプまたは分配)のうち任意のものにより事前に塗布してもよい。電気相互接続は、同一技術(例えば、印刷、スタンプまたは分配)を用いて、スライバー電池の配置前または配置後に付加すればよい。ワイヤボンディング等の他の方法を用いてもよい。
本発明の実施形態は、支持媒体として箔またはフルシートを用いて実施することができる。フルシートおよびトラックに基づいた実際のサブアセンブリのイメージを図11〜図16に示す。基板は、材料(例えば、ガラス繊維織物、ポリカーボネートおよびポリエチレンテレフタレート(PET))を含み得る。実施可能なさらなる材料として、炭素繊維がある。
Claims (21)
- 複数の細長半導体ストリップのモジュラーサブアセンブリを備え、
各サブアセンブリは、
細長半導体ストリップを支持する相互に平行な複数の支持媒体と、
前記支持媒体上に配置されかつ前記支持媒体に貼付された相互に平行で且つ前記支持媒体に直交する複数の細長半導体ストリップ
とを含むことを特徴とする光電池パネル。 - 各サブアセンブリの前記細長半導体ストリップは、複数のバンク内の前記サブアセンブリの前記支持媒体上に配置されることを特徴とする請求項1記載の光電池パネル。
- 各前記サブアセンブリは、各タブ付きサブアセンブリを他のタブ付きサブアセンブリに電気的に接続するための一つ以上のタブを含む一つのタブ付きサブアセンブリであることを特徴とする請求項1又は2記載の光電池パネル。
- 前記複数の細長半導体ストリップは、半導体ウエハから形成されることを特徴とする請求項1〜3のいずれか1項に記載の光電池パネル。
- ロボットハンドリング機器、レイアップマシン、タビングマシンおよびストリンガーのうち1つ以上を含む機器を用いて、前記サブアセンブリが取り扱われることを特徴とする請求項1〜4のいずれか1項に記載の光電池パネル。
- 前記支持媒体は透明、または少なくとも半透明であることを特徴とする請求項1〜5のいずれか1項に記載の光電池パネル。
- 前記支持媒体は不透明であることを特徴とする請求項1〜5のいずれか1項に記載の光電池パネル。
- 前記支持媒体は、ガラス繊維、金属、セラミック、絶縁体およびプラスチックからなる材料群から選択されることを特徴とする請求項1〜7のいずれか1項に記載の光電池パネル。
- 前記プラスチックは、フッ化ビニル樹脂(PVF)、ポリエステル、フッ素重合体フィルム(ETFE)およびポリイミドのうち少なくともいずれか1つを含むことを特徴とする請求項8に記載の光電池パネル。
- 前記支持媒体は、約1000℃および約250℃、約100℃〜約170℃、約200℃〜約250℃、および約100℃〜約200℃からなる群から選択された範囲の処理温度に耐える能力があることを特徴とする請求項1〜9のいずれか1項に記載の光電池パネル。
- 前記支持媒体は、絶縁材料および前記絶縁材料と共に形成された導電性金属部位を含むことを特徴とする請求項1〜4のいずれか1項に記載の光電池パネル。
- 前記支持媒体は、導電性材料および前記導電性材料と共に形成された絶縁部位を含むことを特徴とする請求項1〜4のいずれか1項に記載の光電池パネル。
- 前記支持媒体は、トラック状、リボン状、フィルム状、矩形状、はしご構成状、および角度付きバー状に構成されることを特徴とする請求項1〜4のいずれか1項に記載の光電池パネル。
- 前記支持媒体は、リボンおよびトラックのうち少なくとも1つを含み、補強のためのさらなる構造支持体をさらに含むことを特徴とする請求項1〜4のいずれか1項に記載の光電池パネル。
- 前記複数の細長半導体ストリップは光電池セルであることを特徴とする請求項1〜14のいずれか1項に記載の光電池パネル。
- 各サブアセンブリは光電池デバイスであることを特徴とする請求項15に記載の光電池パネル。
- 前記サブアセンブリは可撓性を有することを特徴とする請求項1〜4のいずれか1項に記載の光電池パネル。
- 前記サブアセンブリは整合性を有することを特徴とする請求項1〜4のいずれか1項に記載の光電池パネル。
- 前記サブアセンブリは剛性を有することを特徴とする請求項1〜4のいずれか1項に記載の光電池パネル。
- 少なくとも2個のタブ付きサブアセンブリと、
タブ付きサブアセンブリのうち少なくとも1つのタブを別のタブ付きサブアセンブリの少なくとも1つのタブに接続するための少なくとも1つの相互接続機構
とを含む請求項3に記載の光電池パネル。 - 前記少なくとも2個のタブ付きサブアセンブリは、生成される電流または電圧に応じて、直列または並列に相互接続されることを特徴とする請求項20に記載の光電池パネル。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2005900338A AU2005900338A0 (en) | 2005-01-27 | Modular sub-assembly of semiconductor strips | |
AU2005900338 | 2005-01-27 | ||
PCT/AU2006/000100 WO2006079174A1 (en) | 2005-01-27 | 2006-01-27 | Modular sub-assembly of semiconductor strips |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008529286A JP2008529286A (ja) | 2008-07-31 |
JP5193605B2 true JP5193605B2 (ja) | 2013-05-08 |
Family
ID=36739976
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007552462A Expired - Fee Related JP5193605B2 (ja) | 2005-01-27 | 2006-01-27 | 光電池パネル |
Country Status (5)
Country | Link |
---|---|
US (1) | US20080264465A1 (ja) |
EP (1) | EP1844494A4 (ja) |
JP (1) | JP5193605B2 (ja) |
CN (2) | CN101931016A (ja) |
WO (1) | WO2006079174A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100173441A1 (en) * | 2007-02-15 | 2010-07-08 | Transform Solar Pty Ltd | Method for processing elongate substrates and substrate securing apparatus |
US9070804B2 (en) * | 2009-02-24 | 2015-06-30 | Sunpower Corporation | Back contact sliver cells |
US8409911B2 (en) * | 2009-02-24 | 2013-04-02 | Sunpower Corporation | Methods for metallization of solar cells |
US20110048505A1 (en) * | 2009-08-27 | 2011-03-03 | Gabriela Bunea | Module Level Solution to Solar Cell Polarization Using an Encapsulant with Opened UV Transmission Curve |
WO2011023139A1 (en) * | 2009-08-31 | 2011-03-03 | Byd Company Limited | Solar battery assembly |
US8343795B2 (en) * | 2009-09-12 | 2013-01-01 | Yuhao Luo | Method to break and assemble solar cells |
WO2012170726A2 (en) * | 2011-06-07 | 2012-12-13 | Transform Solar Pty Ltd. | Solar panel systems having solar panels arranged in parallel, and associated methods |
US20160380146A1 (en) * | 2015-06-25 | 2016-12-29 | Alta Devices, Inc. | Pressurized heated rolling press for manufacture and method of use |
US11211517B2 (en) | 2015-06-25 | 2021-12-28 | Utica Leaseco, Llc | Pressurized heated rolling press for manufacture and method of use |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4019924A (en) * | 1975-11-14 | 1977-04-26 | Mobil Tyco Solar Energy Corporation | Solar cell mounting and interconnecting assembly |
US4577051A (en) * | 1984-09-28 | 1986-03-18 | The Standard Oil Company | Bypass diode assembly for photovoltaic modules |
US4636579A (en) * | 1985-03-18 | 1987-01-13 | Energy Conversion Devices, Inc. | Retractable power supply |
US5021099A (en) * | 1988-08-09 | 1991-06-04 | The Boeing Company | Solar cell interconnection and packaging using tape carrier |
US5164020A (en) * | 1991-05-24 | 1992-11-17 | Solarex Corporation | Solar panel |
US5266125A (en) * | 1992-05-12 | 1993-11-30 | Astropower, Inc. | Interconnected silicon film solar cell array |
JPH07202244A (ja) * | 1994-01-07 | 1995-08-04 | Honda Motor Co Ltd | 太陽電池 |
JPH1074971A (ja) * | 1996-07-03 | 1998-03-17 | Fuji Electric Corp Res & Dev Ltd | 太陽電池モジュールの接続方法 |
US6156967A (en) * | 1998-06-04 | 2000-12-05 | Tecstar Power Systems, Inc. | Modular glass covered solar cell array |
JP3627512B2 (ja) * | 1998-05-07 | 2005-03-09 | 富士電機ホールディングス株式会社 | 可撓性太陽電池モジュールおよびその製造方法および外部リードの接続方法 |
US6357594B1 (en) * | 1998-06-30 | 2002-03-19 | Tempo G | Means to assure ready release of singulated wafer die or integrated circuit chips packed in adhesive backed carrier tapes |
US6160215A (en) * | 1999-03-26 | 2000-12-12 | Curtin; Lawrence F. | Method of making photovoltaic device |
CN1118104C (zh) * | 1999-09-29 | 2003-08-13 | 北京市太阳能研究所 | 硅太阳能电池的制作方法及使用该方法制作的硅太阳能电池 |
US6364089B1 (en) * | 1999-12-10 | 2002-04-02 | National Semiconductor Corporation | Multi-station rotary die handling device |
US6294725B1 (en) * | 2000-03-31 | 2001-09-25 | Trw Inc. | Wireless solar cell array electrical interconnection scheme |
JP2001332752A (ja) * | 2000-05-19 | 2001-11-30 | Canon Inc | 太陽電池モジュール、その搬送方法、その施工方法および太陽光発電装置 |
AUPR174800A0 (en) * | 2000-11-29 | 2000-12-21 | Australian National University, The | Semiconductor processing |
AU2002301252B2 (en) * | 2001-10-12 | 2007-12-20 | Bayer Aktiengesellschaft | Photovoltaic modules with a thermoplastic hot-melt adhesive layer and a process for their production |
WO2003049201A1 (en) * | 2001-12-04 | 2003-06-12 | Origin Energy Solar Pty Ltd | Method of making thin silicon sheets for solar cells |
DE10210521A1 (de) * | 2002-03-09 | 2003-09-18 | Hans Thoma | Verfahren und Vorrichtung zum Herstellen von Solarmodulen |
JP2003273374A (ja) * | 2002-03-13 | 2003-09-26 | Sekisui Jushi Co Ltd | 太陽電池モジュール及び太陽電池モジュールの製造方法 |
AU2003902270A0 (en) * | 2003-05-09 | 2003-05-29 | Origin Energy Solar Pty Ltd | Separating and assembling semiconductor strips |
-
2006
- 2006-01-27 JP JP2007552462A patent/JP5193605B2/ja not_active Expired - Fee Related
- 2006-01-27 US US11/883,083 patent/US20080264465A1/en not_active Abandoned
- 2006-01-27 WO PCT/AU2006/000100 patent/WO2006079174A1/en active Application Filing
- 2006-01-27 CN CN2010101941540A patent/CN101931016A/zh active Pending
- 2006-01-27 EP EP06701715.2A patent/EP1844494A4/en not_active Withdrawn
- 2006-01-27 CN CNA200680006892XA patent/CN101133483A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
CN101931016A (zh) | 2010-12-29 |
WO2006079174A1 (en) | 2006-08-03 |
CN101133483A (zh) | 2008-02-27 |
EP1844494A1 (en) | 2007-10-17 |
US20080264465A1 (en) | 2008-10-30 |
EP1844494A4 (en) | 2013-10-09 |
JP2008529286A (ja) | 2008-07-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5193605B2 (ja) | 光電池パネル | |
US8975510B2 (en) | Foil-based interconnect for rear-contact solar cells | |
JP4838827B2 (ja) | 太陽電池モジュールおよびその製造方法 | |
JP7304038B2 (ja) | フレキシブル光起電力モジュールの製造方法 | |
EP2053661B1 (en) | Solar cell module | |
EP2843710A1 (en) | Solar cell module | |
JP2008147260A (ja) | インターコネクタ、太陽電池ストリング、太陽電池モジュールおよび太陽電池モジュール製造方法 | |
JP2012049390A (ja) | 太陽電池モジュール及びその製造方法 | |
JP6341437B2 (ja) | 太陽電池モジュール | |
JP2009302327A (ja) | 配線部材の接続構造およびそれを備えた太陽電池モジュールならびにその製造方法 | |
WO2012081382A1 (ja) | 太陽電池モジュールおよびインターコネクター材 | |
WO2023036288A1 (zh) | 柔性光伏电池组件及其制造方法 | |
JP2008235819A (ja) | 太陽電池モジュール | |
AU2012200641B2 (en) | Modular sub-assembly of semiconductor strips | |
WO2006122376A1 (en) | Flexible photovoltaic panel of elongated semiconductor strips | |
AU2006208441A1 (en) | Modular sub-assembly of semiconductor strips | |
US20120260973A1 (en) | Busing sub-assembly for photovoltaic modules | |
KR20160048733A (ko) | 소형 태양전지 모듈 및 이의 제조 방법 | |
CN118043976A (en) | Photovoltaic cell assembly and method of manufacturing the same | |
KR20150132954A (ko) | 소형 태양전지 모듈 및 이의 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20081204 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110524 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110525 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20110823 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20110830 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111122 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20120605 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121005 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20121210 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130108 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130204 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160208 Year of fee payment: 3 |
|
LAPS | Cancellation because of no payment of annual fees |