CN202519326U - Winding plated film magnetron sputtering cathode structure - Google Patents
Winding plated film magnetron sputtering cathode structure Download PDFInfo
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- CN202519326U CN202519326U CN2012201643014U CN201220164301U CN202519326U CN 202519326 U CN202519326 U CN 202519326U CN 2012201643014 U CN2012201643014 U CN 2012201643014U CN 201220164301 U CN201220164301 U CN 201220164301U CN 202519326 U CN202519326 U CN 202519326U
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- cathode structure
- sputtering cathode
- negative electrode
- plated film
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Abstract
The utility model relates to vacuum plated film equipment, in particular to a winding plated film magnetron sputtering cathode structure comprising a cathode target; and the winding plated film magnetron sputtering cathode structure is characterized in that an included angle is formed between the target surfaces of two cathode single targets forming the cathode target. The utility model provides a winding plated film magnetron sputtering cathode structure with good atmosphere isolation effect and high deposition rate.
Description
Technical field
The utility model relates to the vacuum plating equipment, relates in particular to a kind of winding film plating magnetic control sputtering cathode structure.
Background technology
Continous way coiling sputter coating machine is obtained widely-used in the industrial production field; Be mainly used in the various composite film materials of formation such as metal refining, metal oxide dielectric on flexible parent metals such as PETfilm with a certain specific function; As: thermal isolation film such as automobile, building glass, ITO/PET nesa coating etc.The technological integrated level of this equipment is high, cooperates closely with technology, and manufacture difficulty is big, and the equipment in a lot of reality uses structurally or its uniqueness all arranged on the Process configuration.
The main structure of this kind equipment comprises the vacuum cavity of a cylindric metal material; Working mechanism-sputter cathode system with reference to figure 1 device core vertically is arranged on the cylindrical internal chamber wall; According to the product function requirement that will produce; Arrange that 1 to 7 cover cathod system does not wait, every suit negative electrode can the sputter material different to realize the different functions rete of product requirement.At present, the precious vacuum of German Lay, Korea S PNT, domestic companies such as middle side's Gaede generally design and customize according to customer requirements all at the production and sales same category of device.
To the widespread use in actual production of target formula planar magnetic control sputtering cathode, the target surface of two single targets of existing general employing is on a planar structure.Do not influence its performance and use generally speaking.For the continous way plated film of flat panel substrates, this structure is very sophisticated especially.The target surface of two single targets is an oval in shape at a planar to the plasmoid that target produces when working; The contact area size of plasmoid and anode substrate receives distance (target-substrate distance) considerable influence of cathode target surface and anode substrate; The ionization degree of cathode material and the distance of two single targets have certain relation, and two factors have very big influence to sedimentation effect.The plane of using for winding film plating because anode substrate is an arc, has influence on the contact area of base material and plasma body to target; Simultaneously; Because target-substrate distance is a changing value, is difficult to obtain an optimal plated film target-substrate distance, sedimentation rate and deposition effect have all received influence.
The utility model content
The purpose of the utility model is to overcome the weak point of above-mentioned prior art and provides a kind of atmosphere isolation effect good winding film plating magnetic control sputtering cathode structure.
The purpose of the utility model also is to overcome the weak point of above-mentioned prior art and provides a kind of sedimentation rate high winding film plating magnetic control sputtering cathode structure.
The purpose of the utility model can realize through following technical scheme:
A kind of winding film plating magnetic control sputtering cathode structure comprises that negative electrode to target, is characterized in that: the formation negative electrode has angle to the target surface of two negative electrode list targets of target.
Winding film plating magnetic control sputtering cathode structure; It is characterized in that: this winding film plating magnetic control sputtering cathode structure and arc anode substrate are used; In plane perpendicular to the arc axle center of arc anode substrate, the equal arcual AnchorPoint through the arc anode substrate of vertical line among the target surface of said two negative electrode list targets.
Because anode substrate is an arc, has influence on the contact area of base material and plasma body, simultaneously,, be difficult to obtain an optimal plated film target-substrate distance because target-substrate distance is a changing value, sedimentation rate and deposition effect (homogeneity) have all received influence.Adopt negative electrode to the target scheme, the contact area of the plasma body of base material and two single target formation is consistent, be easy to obtain suitable plated film cardinal distance, thereby improve plated film efficient and deposition effect.
Description of drawings
Fig. 1 is the synoptic diagram that cathode construction is applied to coating equipment.
Fig. 2 is the synoptic diagram of the negative electrode of prior art to target.
Fig. 3 is the synoptic diagram of the present invention's negative electrode to target.
Embodiment
To combine accompanying drawing that the utility model is done further to detail below.
With reference to figure 1, be the synoptic diagram that cathode construction is applied to coating equipment, the vacuum plating is provided with negative electrode cell 102 in the chamber 101, and cathode construction is arranged in the negative electrode cell 102, and negative electrode cell 102 has opening towards the one side of anode substrate 103.
With reference to figure 2, be a kind of cathode construction of the prior art, this structure comprises becoming the negative electrode target 104 of two routine usefulness, also claims negative electrode to target, and the workplace of an anticathode target 104 is in a plane.
With reference to figure 3, first embodiment of the utility model be a kind of negative electrode to target, constitute negative electrode the target surface of two negative electrode list targets 202 of target had angle.In the present embodiment; Also comprise arc anode substrate 201; In perpendicular to the plane in the arc axle center of arc anode substrate (being in the illustrated plane), the equal arcual AnchorPoint 204 through the arc anode substrate of vertical line 203 among the target surface of said two negative electrode list targets 202.According to reality contrast, present embodiment to target in the oxidation sputter coating of Si, sedimentation rate improves about 18%, under same target power output, can improve to go up and produce speed 11%.
Claims (2)
1. winding film plating magnetic control sputtering cathode structure comprises that negative electrode to target, is characterized in that: constitute negative electrode the target surface of two negative electrode list targets of target is had angle.
2. winding film plating magnetic control sputtering cathode structure according to claim 1; It is characterized in that: this winding film plating magnetic control sputtering cathode structure and arc anode substrate are used; In plane perpendicular to the arc axle center of arc anode substrate, the equal arcual AnchorPoint through the arc anode substrate of vertical line among the target surface of said two negative electrode list targets.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012201643014U CN202519326U (en) | 2012-04-18 | 2012-04-18 | Winding plated film magnetron sputtering cathode structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012201643014U CN202519326U (en) | 2012-04-18 | 2012-04-18 | Winding plated film magnetron sputtering cathode structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202519326U true CN202519326U (en) | 2012-11-07 |
Family
ID=47102286
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012201643014U Expired - Fee Related CN202519326U (en) | 2012-04-18 | 2012-04-18 | Winding plated film magnetron sputtering cathode structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202519326U (en) |
-
2012
- 2012-04-18 CN CN2012201643014U patent/CN202519326U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: SHENZHEN GOLDENKEN OPTIC ELECTRONICS CO., LTD. Free format text: FORMER NAME: SHENZHEN GOLDENKEN OPTIC ELECTRONICS CO., LTD. |
|
| CP03 | Change of name, title or address |
Address after: 518106 Guangdong province Shenzhen Guangming New District Office of Gongming potato field Po community gold hirun Industrial Park first building, building fourth, building tenth, building third a layer and top layer Patentee after: Jin Kaixinrui Photoelectric Co., Ltd. of Shenzhen Address before: Baoan District dalanghua Shenzhen city in Guangdong province 518109 Huarong Road in Jinrui Industrial Park 4 5 floor Patentee before: Shenzhen Goldenken Electronics Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121107 Termination date: 20210418 |