CN109825806A - A kind of PET non-conductive film and preparation method thereof - Google Patents
A kind of PET non-conductive film and preparation method thereof Download PDFInfo
- Publication number
- CN109825806A CN109825806A CN201910137251.7A CN201910137251A CN109825806A CN 109825806 A CN109825806 A CN 109825806A CN 201910137251 A CN201910137251 A CN 201910137251A CN 109825806 A CN109825806 A CN 109825806A
- Authority
- CN
- China
- Prior art keywords
- pet
- film
- pet film
- conductive film
- alloy layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
The invention discloses a kind of PET non-conductive films and preparation method thereof, are related to magnetic control film coating technical field.Be characterized in that: a kind of PET non-conductive film, including PET film, the non-hardened face magnetron sputtering of the PET film have indium stannum alloy layer, and the indium stannum alloy layer has titanium pentoxide layer far from a face magnetron sputtering of PET film；The thickness of the indium stannum alloy layer is less than or equal to 50nm.The present invention can be aoxidized, while playing the role of protecting indium stannum alloy layer, avoiding indium stannum alloy layer from being scratched causes to fall off by being coated with titanium pentoxide layer on the surface of indium stannum alloy layer to avoid indium and tin；Impedance reaches 2000M Ω or more, so that the application range of non-conductive film is wider.
Description
Technical field
The present invention relates to magnetic control film coating technical fields, more specifically, it relates to a kind of PET non-conductive film and its preparation side
Method.
Background technique
With flourishing for information age, people are increasingly dependent on to be exchanged using electronic products such as mobile phones, but hand
Machine shell mostly uses plastic-injection to form greatly, and appearance is poor, needs further surface decoration tech, as surface spraying, it is non-conductive
Vacuum metallization processes etc., the requirement of non-conductive film are that impedance is more than or equal to 200M Ω.
A kind of mobile phone plastic housing protective film is disclosed in the Chinese utility model patent that notification number is CN204505999U,
To be formed by stacking by bottom membrane and metallic diaphragm, wherein bottom membrane is pet layer, metallic diaphragm therein with a thickness of 180-220nm,
The metallic diaphragm is by forming protective film non-conductive and with metallic luster, gold therein on magnetron sputtering to pet layer
Category thicknesses of layers is 190-210nm, and the metallic diaphragm is indium stannum alloy layer.
Said protection film directly plates indium stannum alloy layer on PET film surface, has the disadvantage in that since indium stannum alloy is gold
Belong to, it is small with the adhesive strength of PET, it is easy to fall off；The surface of indium stannum alloy layer does not have protective layer, is easy to cause scuffing；It is above-mentioned
The impedance that two kinds of reasons can further result in protective film is unstable.
Summary of the invention
In view of the deficienciess of the prior art, the purpose of the present invention one is to provide a kind of PET non-conductive film, with indium
The advantages of tin alloy layers are not easy to scratch, fall off, impedance stabilization.
The purpose of the present invention two is to provide a kind of preparation method of PET non-conductive film, with production effect height, product
The stable advantage of quality.
To achieve the above object one, the present invention provides the following technical scheme that
The non-hardened face magnetron sputtering of a kind of PET non-conductive film, including PET film, the PET film has indium stannum alloy layer, the indium
Tin alloy layers have titanium pentoxide layer far from a face magnetron sputtering of PET film；The thickness of the indium stannum alloy layer is less than or equal to
50nm。
By using above-mentioned technical proposal, since the oxide of indium and tin has good electric conductivity, in indium stannum alloy layer
Surface be coated with titanium pentoxide layer, titanium pentoxide can aoxidize to avoid indium and tin, make its impedance stabilization；It plays simultaneously
The effect of indium stannum alloy layer is protected, avoiding indium stannum alloy layer from being scratched causes to fall off；Although indium and tin are conductive metals, but work as
When the thickness of indium stannum alloy layer is less than 50nm, internal structure changes, and impedance reaches 2000M Ω or more, considerably beyond general
The impedance of logical non-conductive film.
Further preferably, the PET film with a thickness of 0.05-0.188mm；The indium stannum alloy layer with a thickness of 10-
50nm；The titanium pentoxide layer with a thickness of 10-15nm.
By using above-mentioned technical proposal, in above-mentioned size range, it can both guarantee the mechanical property of PET non-conductive film
Meet requirement, and can guarantee the impedance of PET non-conductive film more than 2000M Ω.
Further preferably, the mass ratio of indium and tin is 3:7 in the indium stannum alloy layer.
By using above-mentioned technical proposal, influence of the color of indium stannum alloy layer to light transmittance is small.
To achieve the above object two, the present invention provides the following technical scheme that
A kind of preparation method of PET non-conductive film, comprising the following steps:
Step 1 will examine qualified PET film to be sent into hundred grades of dust-free workshops, the protective film of the non-hardened face of PET film be torn, to PET
The non-hardened face of film is dusted, while eliminating electrostatic；
Step 2, by dedusting and the PET film destaticed on the cold drum of winding multi-target magnetic control sputtering coating machine, PET film
Hardened face is contacted with cold drum, is evacuated to vacuum degree less than 3 × 10-4Pa, then be passed through argon gas, keep vacuum degree be 1.5 ± 0.5 ×
10-1Pa；
Step 3 is bombarded using non-hardened face of the anode layer ion source to PET film, and control electric current is 0.1-0.5A, voltage
For 400-600V；
Step 4 opens magnetic control spattering target, and the non-hardened face using DC power supply in PET film deposits indium stannum alloy layer, direct current
The electric current of power supply is 6-8A；
Step 5 deposits titanium pentoxide layer far from the one side of PET film in indium stannum alloy layer using intermediate frequency power supply, intermediate frequency power supply
Power is 8-10kw, obtains PET non-conductive film.
By using above-mentioned technical proposal, electrostatic is first dusted and eliminated to PET film, avoids PET film adsorbing contaminant, then
Bombarded using anode layer ion source so that PET film non-hardened face formed rough surface, significantly improve indium stannum alloy layer with
The adhesive strength of PET film；The successive sedimentation in same equipment due to indium stannum alloy layer and titanium pentoxide layer, it is more using winding
Targets magnetic sputtering film plating machine improves production efficiency, and the quality of PET non-conductive film is stablized.
Further preferably, it is 18-20 DEG C that the step 3, which controls the temperature of PET film into step 5,.
It is controlled since PET film can be persistently overheating in plated film in above-mentioned temperature range by using above-mentioned technical proposal
It is interior, it is ensured that PET film plated film is normally carried out, and avoids PET film deformation or coating film thickness uneven.
Further preferably, it is 18-20 DEG C that the step 3, which controls the temperature of magnetic control spattering target into step 5,.
, can be persistently overheating when due to magnetic control spattering target work by using above-mentioned technical proposal, it controls in above-mentioned temperature
In range, while guaranteeing that target works normally, target is avoided to be burned.
Further preferably, the spacing of the magnetic control spattering target and PET film is 8-15cm.
By using above-mentioned technical proposal, in above-mentioned spacing range, be conducive to the thickness for controlling plated film.
Further preferably, the linear velocity of PET film of the step 3 into step 5 is 0.3-5m/min.
By using above-mentioned technical proposal, the thickness of plated film is thicker, and the linear velocity of PET film is lower, conversely, the thickness of plated film
Thinner, the linear velocity of PET film is higher, under above-mentioned linear velocity, it is ensured that the thickness of indium stannum alloy layer and titanium pentoxide layer
It meets the requirements.
In conclusion compared with prior art, the invention has the following advantages:
(1) for the present invention by being coated with titanium pentoxide layer on the surface of indium stannum alloy layer, titanium pentoxide can be to avoid indium and tin
It aoxidizes, makes its impedance stabilization, while playing the role of protecting indium stannum alloy layer, avoiding indium stannum alloy layer from being scratched causes to take off
It falls；
(2) although indium and tin are conductive metal, but when the thickness of indium stannum alloy layer is less than 50nm, internal structure changes
Become, impedance reaches 2000M Ω or more, considerably beyond the impedance of common non-conductive film, so that the application range of non-conductive film is wider；
(3) present invention bombards the non-hardened face of PET film using anode layer ion source before plated film, so that PET film is non-
Hardened face forms rough surface, significantly improves the adhesive strength of indium stannum alloy layer and PET film, keeps its not easily to fall off.
Specific embodiment
Below with reference to embodiment, the present invention will be described in detail.
Embodiment 1: a kind of PET non-conductive film, including PET film, the light transmittance of PET film are 90% ± 2, the hardening of PET film
The pencil hardness in face is less than or equal to 2H.The non-hardened face magnetron sputtering of PET film has indium stannum alloy layer, and indium stannum alloy layer is far from PET
One face magnetron sputtering of film has titanium pentoxide layer, and titanium pentoxide can aoxidize to avoid indium and tin, makes its impedance stabilization；
Play the role of protecting indium stannum alloy layer simultaneously, avoiding indium stannum alloy layer from being scratched causes to fall off.
The thickness of indium stannum alloy layer is less than or equal to 50nm, so that the resistance of PET non-conductive film be made to be more than or equal to 2000M Ω.
The thickness of PET film can be 0.05-0.188mm, be 0.1mm in the present embodiment；The thickness of indium stannum alloy layer can be 10-
50nm is 30nm in the present embodiment；The thickness of titanium pentoxide layer can be 10-15nm, be 12nm in the present embodiment.In order to drop
Influence of the color of low indium stannum alloy layer to light transmittance, the mass ratio of indium and tin is 3:7 in indium stannum alloy layer.In the present invention
PET non-conductive film can be applied to the decoration of electronic product casing and the protective film of touch screen etc..
Embodiment 2: a kind of PET non-conductive film, difference from example 1 is that, PET film with a thickness of 0.05mm；
Indium stannum alloy layer with a thickness of 10nm；Titanium pentoxide layer with a thickness of 10nm.
Embodiment 3: a kind of PET non-conductive film, difference from example 1 is that, PET film with a thickness of 0.188mm；
Indium stannum alloy layer with a thickness of 50nm；Titanium pentoxide layer with a thickness of 15nm.
A kind of embodiment 4: preparation method of PET non-conductive film, comprising the following steps:
Step 1 carries out appearance and service check to PET film, and the light transmittance of PET film is 90% ± 2, the lead of the hardened face of PET film
Hardness is less than or equal to 2H, by the PET film of appearance and service check qualification hundred grades of dust-free workshops of feeding, tears the non-hardening of PET film
The protective film in face is dusted using non-hardened face of the Roller for sticking dust to PET film, while eliminating electrostatic using ion blower；
Step 2, by dedusting and the PET film destaticed on the cold drum of winding multi-target magnetic control sputtering coating machine, PET film
Hardened face is contacted with cold drum, is evacuated to vacuum degree less than 3 × 10-4Pa, then be passed through argon gas, keep vacuum degree be 1.5 ± 0.5 ×
10-1Pa；
Step 3 is bombarded using non-hardened face of the anode layer ion source to PET film, and control electric current is 0.3A, and voltage is
500V；
Step 4 makes the spacing 10cm of magnetic control spattering target and PET film, opens magnetic control spattering target, is existed using DC power supply
The non-hardened face of PET film deposits indium stannum alloy layer, and the electric current of DC power supply is 7A；
Step 5 deposits titanium pentoxide layer far from the one side of PET film in indium stannum alloy layer using intermediate frequency power supply, intermediate frequency power supply
Power is 9kw, obtains PET non-conductive film.
Finally, sending PET non-conductive film to hundred grades of dust-free workshops, made on the surface of titanium pentoxide layer using Electrostatic Absorption
With patch PE protective film, then pack.
Wherein, it is 19 DEG C that step 3, which controls the temperature of PET film into step 5, and the temperature for controlling magnetic control spattering target is 19
DEG C, the linear velocity of PET film of the step 3 into step 5 is 3m/min.
Embodiment 5: a kind of PET non-conductive film, difference from example 1 is that, step 3 are as follows: use anode leafing
Component bombards the non-hardened face of PET film, and control electric current is 0.1A, voltage 400V.
Embodiment 6: a kind of PET non-conductive film, difference from example 1 is that, step 3 are as follows: use anode leafing
Component bombards the non-hardened face of PET film, and control electric current is 0.5A, voltage 600V.
Embodiment 7: a kind of PET non-conductive film, difference from example 1 is that, DC power supply in step 4
Electric current is 6A, and the power of the intermediate frequency power supply in step 5 is 8kw.
Embodiment 8: a kind of PET non-conductive film, difference from example 1 is that, DC power supply in step 4
Electric current is 8A, and the power of the intermediate frequency power supply in step 5 is 10kw.
Embodiment 9: a kind of PET non-conductive film, difference from example 1 is that, make magnetic control spattering target and PET film
Spacing be 8cm, the linear velocity of PET film of the step 3 into step 5 is 0.3m/min.
Embodiment 10: a kind of PET non-conductive film, difference from example 1 is that, make magnetic control spattering target and PET
The spacing of film is 15cm, and the linear velocity of PET film of the step 3 into step 5 is 5m/min.
Embodiment 11: a kind of PET non-conductive film, difference from example 1 is that, step 3 is controlled into step 5
The temperature of PET film is 18 DEG C, and the temperature for controlling magnetic control spattering target is 20 DEG C.
Embodiment 12: a kind of PET non-conductive film, difference from example 1 is that, step 3 is controlled into step 5
The temperature of PET film is 20 DEG C, and the temperature for controlling magnetic control spattering target is 18 DEG C.
Comparative example 1: the non-hardened face magnetron sputtering of a kind of PET non-conductive film, including PET film, PET film has indium stannum alloy
Layer, PET film with a thickness of 0.1mm；Indium stannum alloy layer with a thickness of 30nm.
Comparative example 2: a kind of PET non-conductive film, difference from example 1 is that, indium stannum alloy layer with a thickness of
80nm。
A kind of comparative example 3: preparation method of PET non-conductive film, comprising the following steps:
Step 1 carries out appearance and service check to PET film, and the light transmittance of PET film is 90% ± 2, the lead of the hardened face of PET film
Hardness is less than or equal to 2H, by the PET film of appearance and service check qualification hundred grades of dust-free workshops of feeding, tears the non-hardening of PET film
The protective film in face is dusted using non-hardened face of the Roller for sticking dust to PET film, while eliminating electrostatic using ion blower；
Step 2, by dedusting and the PET film destaticed on the cold drum of winding multi-target magnetic control sputtering coating machine, PET film
Hardened face is contacted with cold drum, is evacuated to vacuum degree less than 3 × 10-4Pa, then be passed through argon gas, keep vacuum degree be 1.5 ± 0.5 ×
10-1Pa；
Step 3 makes the spacing 10cm of magnetic control spattering target and PET film, opens magnetic control spattering target, is existed using DC power supply
The non-hardened face of PET film deposits indium stannum alloy layer, and the electric current of DC power supply is 7A；
Step 4 deposits titanium pentoxide layer far from the one side of PET film in indium stannum alloy layer using intermediate frequency power supply, intermediate frequency power supply
Power is 9kw, obtains PET non-conductive film.
For step 3 into step 4, the temperature for controlling PET film is 19 DEG C, and the temperature for controlling magnetic control spattering target is 19 DEG C,
The linear velocity of PET film is 3m/min.
One, it the examination and test of products: tests to the properties of the PET non-conductive film in embodiment 1, inspection result is shown in Table 1.
The inspection result of PET non-conductive film in 1 embodiment 1 of table
Two, service check
The method of inspection: the adhesive force and resistance value of the PET non-conductive film in embodiment 1-12 and comparative example 1-3 are examined respectively.
Inspection result and analysis: adhesive force and the resistance value inspection of the PET non-conductive film in embodiment 1-12 and comparative example 1-3
Test that the results are shown in Table 2.As shown in Table 2, the adhesive force of embodiment 1-12 is 0 grade, and comparative example 1 is in no titanium pentoxide layer
When, adhesive force becomes 2 grades, and comparative example 3 does not bombard the non-hardened face of PET film using anode layer ion source before plated film,
Adhesive force becomes 4 grades, illustrates the present invention by being coated with titanium pentoxide layer on the surface of indium stannum alloy layer, titanium pentoxide layer rises
To the effect of protection indium stannum alloy layer, avoiding indium stannum alloy layer from being scratched causes to fall off；The present invention uses anode layer before plated film
Ion source bombards the non-hardened face of PET film, so that the non-hardened face of PET film forms rough surface, significantly improves the conjunction of indium tin
The adhesive strength of layer gold and PET film keeps its not easily to fall off.
The resistance value of embodiment 1-12 >=2000M Ω, and comparative example 2 is reduced to 0M Ω, electrically conductive, does not meet non-lead
The requirement of electrolemma.When illustrating that the thickness of indium stannum alloy layer is only less than 50nm, internal structure changes, and impedance reaches
2000M Ω or more, considerably beyond the impedance of common non-conductive film, so that the application range of non-conductive film is wider.
The adhesive force and resistance value inspection result of PET non-conductive film in table 2 embodiment 1-12 and comparative example 1-3
| Embodiment/comparative example number | Adhesive force | Resistance value |
| Embodiment 1 | 0 grade | ≥2000MΩ |
| Embodiment 2 | 0 grade | ≥2000MΩ |
| Embodiment 3 | 0 grade | ≥2000MΩ |
| Embodiment 4 | 0 grade | ≥2000MΩ |
| Embodiment 5 | 0 grade | ≥2000MΩ |
| Embodiment 6 | 0 grade | ≥2000MΩ |
| Embodiment 7 | 0 grade | ≥2000MΩ |
| Embodiment 8 | 0 grade | ≥2000MΩ |
| Embodiment 9 | 0 grade | ≥2000MΩ |
| Embodiment 10 | 0 grade | ≥2000MΩ |
| Embodiment 11 | 0 grade | ≥2000MΩ |
| Embodiment 12 | 0 grade | ≥2000MΩ |
| Comparative example 1 | 2 grades | ≥2000MΩ |
| Comparative example 2 | 1 grade | 0MΩ |
| Comparative example 3 | 4 grades | ≥1000MΩ |
The above is only a preferred embodiment of the present invention, protection scope of the present invention is not limited merely to above-described embodiment,
All technical solutions belonged under thinking of the present invention all belong to the scope of protection of the present invention.It should be pointed out that for the art
For those of ordinary skill, several improvements and modifications without departing from the principles of the present invention, these improvements and modifications are also answered
It is considered as protection scope of the present invention.
Claims (9)
1. a kind of PET non-conductive film, including PET film, which is characterized in that the non-hardened face magnetron sputtering of the PET film has indium tin
Alloy-layer, the indium stannum alloy layer have titanium pentoxide layer far from a face magnetron sputtering of PET film；The thickness of the indium stannum alloy layer
Degree is less than or equal to 50nm.
2. a kind of PET non-conductive film according to claim 1, which is characterized in that the PET film with a thickness of 0.05-
0.188mm；The indium stannum alloy layer with a thickness of 10-50nm；The titanium pentoxide layer with a thickness of 10-15nm.
3. a kind of PET non-conductive film according to claim 1, which is characterized in that indium and tin in the indium stannum alloy layer
Mass ratio is 3:7.
4. a kind of PET non-conductive film according to claim 1, which is characterized in that the resistance of the PET non-conductive film is greater than
Equal to 2000M Ω, the light transmittance of the PET film is 90% ± 2.
5. a kind of preparation method of PET non-conductive film, which comprises the following steps:
Step 1 will examine qualified PET film to be sent into hundred grades of dust-free workshops, the protective film of the non-hardened face of PET film be torn, to PET
The non-hardened face of film is dusted, while eliminating electrostatic；
Step 2, by dedusting and the PET film destaticed on the cold drum of winding multi-target magnetic control sputtering coating machine, PET film
Hardened face is contacted with cold drum, is evacuated to vacuum degree less than 3 × 10-4Pa, then be passed through argon gas, keep vacuum degree be 1.5 ± 0.5 ×
10-1Pa；
Step 3 is bombarded using non-hardened face of the anode layer ion source to PET film, and control electric current is 0.1-0.5A, voltage
For 400-600V；
Step 4 opens magnetic control spattering target, and the non-hardened face using DC power supply in PET film deposits indium stannum alloy layer, direct current
The electric current of power supply is 6-8A；
Step 5 deposits titanium pentoxide layer far from the one side of PET film in indium stannum alloy layer using intermediate frequency power supply, intermediate frequency power supply
Power is 8-10kw, obtains PET non-conductive film.
6. a kind of preparation method of PET non-conductive film according to claim 5, which is characterized in that the step 3 to step
The temperature that PET film is controlled in rapid five is 18-20 DEG C.
7. a kind of preparation method of PET non-conductive film according to claim 5, which is characterized in that the step 3 to step
The temperature that magnetic control spattering target is controlled in rapid five is 18-20 DEG C.
8. a kind of preparation method of PET non-conductive film according to claim 5, which is characterized in that the magnetic controlled sputtering target
The spacing of material and PET film is 8-15cm.
9. a kind of preparation method of PET non-conductive film according to claim 5, which is characterized in that the step 3 to step
The linear velocity of PET film in rapid five is 0.3-5m/min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910137251.7A CN109825806B (en) | 2019-02-23 | 2019-02-23 | PET (polyethylene terephthalate) non-conductive film and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910137251.7A CN109825806B (en) | 2019-02-23 | 2019-02-23 | PET (polyethylene terephthalate) non-conductive film and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109825806A true CN109825806A (en) | 2019-05-31 |
| CN109825806B CN109825806B (en) | 2020-12-04 |
Family
ID=66864384
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910137251.7A Active CN109825806B (en) | 2019-02-23 | 2019-02-23 | PET (polyethylene terephthalate) non-conductive film and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109825806B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111763915A (en) * | 2020-05-19 | 2020-10-13 | 浙江上方电子装备有限公司 | Non-conductive film, preparation method thereof and coated substrate |
| CN113463048A (en) * | 2021-06-18 | 2021-10-01 | 安徽立光电子材料股份有限公司 | Flexible membrane manufacturing method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201234412Y (en) * | 2008-07-15 | 2009-05-06 | 比亚迪股份有限公司 | Plastic rubber case and mobile phone adopting the plastic rubber case |
| EP2179798A1 (en) * | 2008-10-27 | 2010-04-28 | FIH (Hong Kong) Limited | Device housing and method for manufacturing the same |
| CN104818456A (en) * | 2015-05-07 | 2015-08-05 | 苏州融睿纳米复材科技有限公司 | Processing technology of a high-hardness angstrom-scale functional protective thin film layer |
| CN108220884A (en) * | 2016-12-21 | 2018-06-29 | 蓝思科技（长沙）有限公司 | A kind of preparation method of high-temp resisting high-humidity resisting gold film |
| CN108583130A (en) * | 2018-04-12 | 2018-09-28 | Oppo广东移动通信有限公司 | The manufacturing method of electronic device and its shell and shell |
-
2019
- 2019-02-23 CN CN201910137251.7A patent/CN109825806B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201234412Y (en) * | 2008-07-15 | 2009-05-06 | 比亚迪股份有限公司 | Plastic rubber case and mobile phone adopting the plastic rubber case |
| EP2179798A1 (en) * | 2008-10-27 | 2010-04-28 | FIH (Hong Kong) Limited | Device housing and method for manufacturing the same |
| CN104818456A (en) * | 2015-05-07 | 2015-08-05 | 苏州融睿纳米复材科技有限公司 | Processing technology of a high-hardness angstrom-scale functional protective thin film layer |
| CN108220884A (en) * | 2016-12-21 | 2018-06-29 | 蓝思科技（长沙）有限公司 | A kind of preparation method of high-temp resisting high-humidity resisting gold film |
| CN108583130A (en) * | 2018-04-12 | 2018-09-28 | Oppo广东移动通信有限公司 | The manufacturing method of electronic device and its shell and shell |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111763915A (en) * | 2020-05-19 | 2020-10-13 | 浙江上方电子装备有限公司 | Non-conductive film, preparation method thereof and coated substrate |
| CN111763915B (en) * | 2020-05-19 | 2022-09-06 | 浙江上方电子装备有限公司 | Non-conductive film, preparation method thereof and coated substrate |
| CN113463048A (en) * | 2021-06-18 | 2021-10-01 | 安徽立光电子材料股份有限公司 | Flexible membrane manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109825806B (en) | 2020-12-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6964401B2 (en) | Transparent conductive film | |
| TWI567755B (en) | Method for manufacturing transparent conductive film | |
| CN105492653B (en) | Transparent and electrically conductive film and its manufacturing method | |
| CN107532288B (en) | Reactive sputtering method and method for producing laminated film | |
| CN109825806A (en) | A kind of PET non-conductive film and preparation method thereof | |
| TW201443925A (en) | Transparent conductive film and production method therefor | |
| TW201435106A (en) | Production method for transparent conductive film | |
| JPWO2004065656A1 (en) | ITO thin film, film forming method thereof, transparent conductive film, and touch panel | |
| KR20010083477A (en) | Method of depositing an io or ito thin film on polymer substrate | |
| US20140027021A1 (en) | Method for manufacturing conductive film roll | |
| JP2015133256A (en) | Transparent conductive laminate and method for manufacturing the same, and capacitance type touch panel | |
| CN106460153B (en) | Transparent and electrically conductive film and its manufacturing method | |
| TWI625739B (en) | Transparent conductive film and method of producing the same | |
| CN109811308A (en) | A kind of ITO process for making conducting membrane | |
| WO2007013220A1 (en) | Transparent electrically conductive film, transparent electrically conductive sheet, and touch panel | |
| KR20200001441A (en) | Ito film and transparent conductive film | |
| TW302556B (en) | ||
| KR101174359B1 (en) | Multi-component metal oxide based transparency electrode having metal layer and manufacturing method thereof | |
| JP2012107336A (en) | Transparent conductive film and method for producing same | |
| JP2004193008A (en) | Formation method of transparent conductive thin film, transparent conductive thin film, transparent conductive film, and touch panel | |
| KR20150107684A (en) | Preparation method of transparent conductive substrate | |
| JP4410846B2 (en) | Laminate having SiO2 film and method for producing transparent conductive laminate | |
| JP2005530880A (en) | Coating material | |
| CN217690518U (en) | Two-sided blackened copper conducting film | |
| CN114525427A (en) | Tin-based alloy material, preparation method thereof, high-resistance film and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |