CN104818456A - Processing technology of a high-hardness angstrom-scale functional protective thin film layer - Google Patents
Processing technology of a high-hardness angstrom-scale functional protective thin film layer Download PDFInfo
- Publication number
- CN104818456A CN104818456A CN201510229011.1A CN201510229011A CN104818456A CN 104818456 A CN104818456 A CN 104818456A CN 201510229011 A CN201510229011 A CN 201510229011A CN 104818456 A CN104818456 A CN 104818456A
- Authority
- CN
- China
- Prior art keywords
- ethylmercurichlorendimide
- thin film
- film layer
- function
- working gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
The invention discloses a processing technology of a high-hardness angstrom-scale functional protective thin film layer. The preparation method includes following steps: quality inspection of raw materials, vacuumizing treatment to a vacuum device, plasma cleaning treatment, plasma modification treatment, hardened angstrom-scale material stacking treatment, functional angstrom-scale material stacking treatment, cooling and vacuum-breaking treatment and quality inspection of a finish product. The surface hardness of the protective thin film layer can reach higher than 9H grade of pencil hardness. The functional protective thin film layer can satisfy special user requirements, has multiple functions of anti-fouling, fingerprint proofing and water proofing and the like on the surface, is free of scratches, base material exposure, falling, scratching and the like problem on surface after long-period contact operation, and can satisfy the special user requirements in all aspects.
Description
Technical field
the invention belongs to film under vacuum manufacture field, relate to a kind of high rigidity Ethylmercurichlorendimide function protecting thin film layer making technology particularly.
Background technology
various hardness on surface of the glass of current vacuum film or pottery and function, all adopt " vacuum process technology mode " or " vacuum adds upper surface
uV
coating making technology mode ".This explained hereafter cost is lower, and technique belongs to novel or mutually arranges in pairs or groups with tradition.But also there is shortcoming in this technique:
1
, spray paint
uV
appearance of coat is partially yellow, some restriction of changes colour.
2
, that art production process easily produces bubble, particle, soft flocks etc. is bad, deficient manufacturing procedure rate is high.
3
, translating eqipment picks and places, carry, store, and easily causes the absorption of soft flocks dust bad.
4
, antifouling, the waterproof of finished surface etc. is functional poor.
5
, surface hardness rank, pencil hardness generally between
5 ~ 6H
between, particular client requirement can not be met.
6
, cannot be tested by poach,
100
dEG C
+/-2
dEG C pure water, poach
10min
time have the unusual phenomenoies such as variable color, foaming, corrosion.
7
, when carrying out operating of contacts for a long time, coatingsurface easily occurs to be had shadow scratch, show-through material, come off, scratches phenomenon etc., can not meet the demand of particular client.
Summary of the invention
the present invention seeks to: a kind of high rigidity Ethylmercurichlorendimide function protecting thin film layer making technology is provided, the hardness of thin film layer can be made to have and reach pencil hardness
9H
above, the functions such as antifouling, anti-fingerprint, waterproof can also be had simultaneously.
technical scheme of the present invention is:
a kind of high rigidity Ethylmercurichlorendimide function protecting thin film layer making technology, comprises the following steps:
a.
raw material quality is checked: carry out quality inspection to raw-material finished surface cut, outward appearance cleanliness factor;
b.
vacuum apparatus vacuumizes process: be placed in tool fixture by the starting material of requirement up to specification, sends into after vacuumizing in vacuum apparatus and obtains material
a
;
c.
electricity slurry clean: by material
a
send in electricity slurry ion source apparatus, pour the first working gas simultaneously, after setting preset pressure value carries out clean, obtain material
b
;
d.
electricity slurry modifying process: pour the first working gas in upgrading Ethylmercurichlorendimide material sections, electron beam gun is by high voltage and current, and the beam energy of generation deflects to Ethylmercurichlorendimide material, makes Ethylmercurichlorendimide material be that gaseous molecular shape is at material by solid state transformation
b
surface forms thin film layer, obtains material
c
;
e
. stiffened Ethylmercurichlorendimide material stack process: pour the second working gas in stiffened function Ethylmercurichlorendimide material sections, the beam energy that electron beam gun produces deflects on the Ethylmercurichlorendimide material of stiffened function Ethylmercurichlorendimide material sections, make Ethylmercurichlorendimide material be gaseous molecular shape by solid state transformation, Ethylmercurichlorendimide material constantly deposits to material
c
on, obtain material
d
;
f.
function Ethylmercurichlorendimide material stack process: pour the second working gas in function Ethylmercurichlorendimide material sections, the beam energy that electron beam gun produces deflects on the Ethylmercurichlorendimide material of function Ethylmercurichlorendimide material sections, make Ethylmercurichlorendimide material be gaseous molecular shape by solid state transformation, Ethylmercurichlorendimide material constantly deposits to material
d
on, obtain material
e
;
g.
cooling vacuum breaker process: material
e
after cooling, vacuum breaker takes out;
h.
final product quality is checked: check material
e
namely finished product is obtained after qualified.
preferably, described first working gas is argon gas.
preferably, described second working gas is argon gas, oxygen or nitrogen.
preferably, described starting material are plastic material, glass or pottery.
preferably, described step
d-f
in Ethylmercurichlorendimide material be the Ethylmercurichlorendimide level material of any one llowing group of materials:
siO
2
,
ti
3
o
5
,
al
2
o
3
,
zrO
2
,
nb
2
o
5
.
advantage of the present invention is:
1
, surface hardness rank can reach pencil hardness
9H
above, particular client requirement can be met.
2
, can be tested by poach,
100
dEG C
+/-2
dEG C pure water, poach
10min
time there is no the unusual phenomenoies such as variable color, foaming, corrosion, on product not impact itself.
3
, when carrying out operating of contacts for a long time, surface does not have cut, show-through material, comes off, scratches phenomenon etc., all can meet the demand of particular client.
4
, appearance color is controlled, partially not yellow, can change the color of customer demand flexibly.
5
, art production process stablize, Automation of Manufacturing Process control fraction defective lower, process rate is high.Complete whole processing procedure by an equipment, do not have translating eqipment to pick and place, carry, storage etc., the absorption problem of soft flocks dust can not be caused.
6
, finished surface can obtain has antifouling, anti-fingerprint, waterproof etc. several functions.
Accompanying drawing explanation
below in conjunction with drawings and Examples, the invention will be further described:
figure
1
for the schema of high rigidity Ethylmercurichlorendimide function protecting thin film layer making technology of the present invention.
Embodiment
for making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with embodiment also with reference to accompanying drawing, the present invention is described in more detail.Should be appreciated that, these describe just exemplary, and do not really want to limit the scope of the invention.In addition, in the following description, the description to known features and technology is eliminated, to avoid unnecessarily obscuring concept of the present invention.
embodiment
1
:
as figure
1
shown in, a kind of high rigidity Ethylmercurichlorendimide function protecting thin film layer making technology, comprises the following steps:
a.
glass material quality test: quality inspection is carried out to the finished surface cut of glass material, outward appearance cleanliness factor;
b.
vacuum apparatus vacuumizes process: be placed in tool fixture by the glass material of requirement up to specification, sends into after vacuumizing in vacuum apparatus and obtains material
a
;
c.
electricity slurry clean: by material
a
send in electricity slurry ion source apparatus, pour argon gas simultaneously, after setting preset pressure value carries out clean, obtain material
b
;
d.
electricity slurry modifying process: pour argon gas in upgrading Ethylmercurichlorendimide material sections, electron beam gun is by high voltage and current, and the beam energy of generation deflects to Ethylmercurichlorendimide level
siO
2
, make Ethylmercurichlorendimide level
siO
2
be that gaseous molecular shape is at material by solid state transformation
b
surface forms thin film layer, obtains material
c
;
e
. stiffened Ethylmercurichlorendimide material stack process: pour nitrogen in stiffened function Ethylmercurichlorendimide material sections, the beam energy that electron beam gun produces deflects to the Ethylmercurichlorendimide level of stiffened function Ethylmercurichlorendimide material sections
zrO
2
on, make Ethylmercurichlorendimide level
zrO
2
be gaseous molecular shape by solid state transformation, Ethylmercurichlorendimide level
zrO
2
constantly deposit to material
c
on, obtain material
d
;
f.
function Ethylmercurichlorendimide material stack process: pour argon gas in function Ethylmercurichlorendimide material sections, the beam energy that electron beam gun produces deflects to the Ethylmercurichlorendimide level of function Ethylmercurichlorendimide material sections
nb
2
o
5
on, make Ethylmercurichlorendimide level
nb
2
o
5
be gaseous molecular shape by solid state transformation, Ethylmercurichlorendimide level
nb
2
o
5
constantly deposit to material
d
on, obtain material
e
;
g.
cooling vacuum breaker process: material
e
after cooling, vacuum breaker takes out;
h.
final product quality is checked: by material
e
namely finished product is obtained after carrying out passed examination.
embodiment
2
:
a kind of high rigidity Ethylmercurichlorendimide function protecting thin film layer making technology, comprises the following steps:
a.
stupalith quality test: quality inspection is carried out to the finished surface cut of stupalith, outward appearance cleanliness factor;
b.
vacuum apparatus vacuumizes process: be placed in tool fixture by the stupalith of requirement up to specification, sends into after vacuumizing in vacuum apparatus and obtains material
a
;
c.
electricity slurry clean: by material
a
send in electricity slurry ion source apparatus, pour argon gas simultaneously, after setting preset pressure value carries out clean, obtain material
b
;
d.
electricity slurry modifying process: pour argon gas in upgrading Ethylmercurichlorendimide material sections, electron beam gun is by high voltage and current, and the beam energy of generation deflects to Ethylmercurichlorendimide level
al
2
o
3
, make Ethylmercurichlorendimide level
al
2
o
3
be that gaseous molecular shape is at material by solid state transformation
b
surface forms thin film layer, obtains material
c
;
e
. stiffened Ethylmercurichlorendimide material stack process: pour argon gas in stiffened function Ethylmercurichlorendimide material sections, the beam energy that electron beam gun produces deflects to the Ethylmercurichlorendimide level of stiffened function Ethylmercurichlorendimide material sections
ti
3
o
5
on, make Ethylmercurichlorendimide level
ti
3
o
5
be gaseous molecular shape by solid state transformation, Ethylmercurichlorendimide level
ti
3
o
5
constantly deposit to material
c
on, obtain material
d
;
f.
function Ethylmercurichlorendimide material stack process: pour oxygen in function Ethylmercurichlorendimide material sections, the beam energy that electron beam gun produces deflects to the Ethylmercurichlorendimide level of function Ethylmercurichlorendimide material sections
siO
2
on, make Ethylmercurichlorendimide level
siO
2
be gaseous molecular shape by solid state transformation, Ethylmercurichlorendimide level
siO
2
constantly deposit to material
d
on, obtain material
e
;
g.
cooling vacuum breaker process: material
e
after cooling, vacuum breaker takes out;
h.
final product quality is checked: by material
e
namely finished product is obtained after carrying out passed examination.
embodiment
3
:
a kind of high rigidity Ethylmercurichlorendimide function protecting thin film layer making technology, comprises the following steps:
a. ABS
quality of materials is checked: right
aBS
finished surface cut, the outward appearance cleanliness factor of material carry out quality inspection;
b.
vacuum apparatus vacuumizes process: by requirement up to specification
aBS
material is placed in tool fixture, sends into after vacuumizing in vacuum apparatus and obtains material
a
;
c.
electricity slurry clean: by material
a
send in electricity slurry ion source apparatus, pour argon gas simultaneously, after setting preset pressure value carries out clean, obtain material
b
;
d.
electricity slurry modifying process: pour argon gas in upgrading Ethylmercurichlorendimide material sections, electron beam gun is by high voltage and current, and the beam energy of generation deflects to Ethylmercurichlorendimide level
nb
2
o
5
, make Ethylmercurichlorendimide level
nb
2
o
5
be that gaseous molecular shape is at material by solid state transformation
b
surface forms thin film layer, obtains material
c
;
e
. stiffened Ethylmercurichlorendimide material stack process: pour argon gas in stiffened function Ethylmercurichlorendimide material sections, the beam energy that electron beam gun produces deflects to the Ethylmercurichlorendimide level of stiffened function Ethylmercurichlorendimide material sections
al
2
o
3
on, make Ethylmercurichlorendimide level
al
2
o
3
be gaseous molecular shape by solid state transformation, Ethylmercurichlorendimide level
al
2
o
3
constantly deposit to material
c
on, obtain material
d
;
f.
function Ethylmercurichlorendimide material stack process: pour oxygen in function Ethylmercurichlorendimide material sections, the beam energy that electron beam gun produces deflects to the Ethylmercurichlorendimide level of function Ethylmercurichlorendimide material sections
siO
2
on, make Ethylmercurichlorendimide level
siO
2
be gaseous molecular shape by solid state transformation, Ethylmercurichlorendimide level
siO
2
constantly deposit to material
d
on, obtain material
e
;
g.
cooling vacuum breaker process: material
e
after cooling, vacuum breaker takes out;
h.
final product quality is checked: by material
e
namely finished product is obtained after carrying out passed examination.
it should be noted that, the starting material of making technology of the present invention can also be other plastic material.Second working gas, the collocation of actual demand function status is argon gas, oxygen, nitrogen.Step
d-f
in Ethylmercurichlorendimide material comprise
siO
2
,
ti
3
o
5
,
al
2
o
3
,
zrO
2
,
nb
2
o
5
.
in step
f
in, the various function Ethylmercurichlorendimide materials needing in advance to obtain, constantly can deposit to material always
e
on, form the thin film layer of several functions.Such as there is antifouling, the function such as anti-fingerprint, waterproof.
should be understood that, above-mentioned embodiment of the present invention only for exemplary illustration or explain principle of the present invention, and is not construed as limiting the invention.Therefore, any amendment made when without departing from the spirit and scope of the present invention, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.In addition, claims of the present invention be intended to contain fall into claims scope and border or this scope and border equivalents in whole change and modification.
Claims (5)
1. a high rigidity Ethylmercurichlorendimide function protecting thin film layer making technology, is characterized in that, comprise the following steps:
A. raw material quality inspection: quality inspection is carried out to raw-material finished surface cut, outward appearance cleanliness factor;
B. vacuum apparatus vacuumizes process: be placed in tool fixture by the starting material of requirement up to specification, sends into after vacuumizing in vacuum apparatus and obtains materials A;
C. electricity slurry clean: materials A is sent in electricity slurry ion source apparatus, pour the first working gas simultaneously, obtain material B after setting preset pressure value carries out clean;
D. electricity slurry modifying process: pour the first working gas in upgrading Ethylmercurichlorendimide material sections, electron beam gun passes through high voltage and current, the beam energy produced deflects to Ethylmercurichlorendimide material, makes Ethylmercurichlorendimide material be that gaseous molecular shape forms thin film layer on material B surface by solid state transformation, obtains material C;
E. stiffened Ethylmercurichlorendimide material stack process: pour the second working gas in stiffened function Ethylmercurichlorendimide material sections, the beam energy that electron beam gun produces deflects on the Ethylmercurichlorendimide material of stiffened function Ethylmercurichlorendimide material sections, Ethylmercurichlorendimide material is made to be gaseous molecular shape by solid state transformation, Ethylmercurichlorendimide material constantly deposits in material C, obtains material D;
F. function Ethylmercurichlorendimide material stack process: pour the second working gas in function Ethylmercurichlorendimide material sections, the beam energy that electron beam gun produces deflects on the Ethylmercurichlorendimide material of function Ethylmercurichlorendimide material sections, Ethylmercurichlorendimide material is made to be gaseous molecular shape by solid state transformation, Ethylmercurichlorendimide material constantly deposits on material D, obtains material E;
G. cool vacuum breaker process: after material E cools, vacuum breaker takes out;
H. final product quality inspection: check that namely material E obtains finished product after qualified.
2. high rigidity Ethylmercurichlorendimide function protecting thin film layer making technology according to claim 1, it is characterized in that, described first working gas is argon gas.
3. high rigidity Ethylmercurichlorendimide function protecting thin film layer making technology according to claim 1, it is characterized in that, described second working gas is argon gas, oxygen or nitrogen.
4. high rigidity Ethylmercurichlorendimide function protecting thin film layer making technology according to claim 1, it is characterized in that, described starting material are plastic material, glass or pottery.
5. high rigidity Ethylmercurichlorendimide function protecting thin film layer making technology according to claim 1, is characterized in that, the Ethylmercurichlorendimide material in described steps d-f is the Ethylmercurichlorendimide level material of any one llowing group of materials: SiO
2, Ti
3o
5, Al
2o
3, ZrO
2, Nb
2o
5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510229011.1A CN104818456A (en) | 2015-05-07 | 2015-05-07 | Processing technology of a high-hardness angstrom-scale functional protective thin film layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510229011.1A CN104818456A (en) | 2015-05-07 | 2015-05-07 | Processing technology of a high-hardness angstrom-scale functional protective thin film layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104818456A true CN104818456A (en) | 2015-08-05 |
Family
ID=53728933
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510229011.1A Pending CN104818456A (en) | 2015-05-07 | 2015-05-07 | Processing technology of a high-hardness angstrom-scale functional protective thin film layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104818456A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109825806A (en) * | 2019-02-23 | 2019-05-31 | 厦门玉通光电有限公司 | A kind of PET non-conductive film and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101550533A (en) * | 2009-05-07 | 2009-10-07 | 厦门美澜光电科技有限公司 | Antistatic optical substrate preparation method |
| CN103129062A (en) * | 2011-12-05 | 2013-06-05 | 三星电子株式会社 | Coating structure, method for forming the same and apparatus provided with the coating structure |
| CN103146119A (en) * | 2013-02-28 | 2013-06-12 | 金发科技股份有限公司 | Wear-resistant antimicrobial ABS (acrylonitrile-butadiene-styrene) modified material and preparation method thereof |
| US20140287221A1 (en) * | 2010-04-30 | 2014-09-25 | Rockwell Automation Technologies, Inc. | Coated industrial automation device |
-
2015
- 2015-05-07 CN CN201510229011.1A patent/CN104818456A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101550533A (en) * | 2009-05-07 | 2009-10-07 | 厦门美澜光电科技有限公司 | Antistatic optical substrate preparation method |
| US20140287221A1 (en) * | 2010-04-30 | 2014-09-25 | Rockwell Automation Technologies, Inc. | Coated industrial automation device |
| CN103129062A (en) * | 2011-12-05 | 2013-06-05 | 三星电子株式会社 | Coating structure, method for forming the same and apparatus provided with the coating structure |
| CN103146119A (en) * | 2013-02-28 | 2013-06-12 | 金发科技股份有限公司 | Wear-resistant antimicrobial ABS (acrylonitrile-butadiene-styrene) modified material and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109825806A (en) * | 2019-02-23 | 2019-05-31 | 厦门玉通光电有限公司 | A kind of PET non-conductive film and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150805 |