CN104818455A - Processing method of self-sterilizing angstrom-scale functional protective thin film layer - Google Patents
Processing method of self-sterilizing angstrom-scale functional protective thin film layer Download PDFInfo
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- CN104818455A CN104818455A CN201510227733.3A CN201510227733A CN104818455A CN 104818455 A CN104818455 A CN 104818455A CN 201510227733 A CN201510227733 A CN 201510227733A CN 104818455 A CN104818455 A CN 104818455A
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- Prior art keywords
- ethylmercurichlorendimide
- film layer
- thin film
- function
- sterilization
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Abstract
The invention discloses a processing method of a self-sterilizing angstrom-scale functional protective thin film layer. The processing method includes following steps: quality inspection of raw materials, vacuumizing treatment to a vacuum device, plasma cleaning treatment, plasma modification treatment, hardened angstrom-scale material stacking treatment, self-sterilizing angstrom-scale material stacking treatment, cooling and vacuum-breaking treatment and quality inspection of a finish product. The processing method can be used for preparing the protective thin film layer product of which the surface has multiple functions comprising self-sterilization, antifouling, fingerprint proofing and water proofing and the like. The functional protective thin film layer can satisfy special user requirements, is free of scratches, base material exposure, falling, scratching and the like problem on surface after long-period contact operation, and can satisfy the special user requirements in all aspects.
Description
Technical field
the invention belongs to film under vacuum manufacture field, relate to a kind of from sterilization Ethylmercurichlorendimide function protecting thin film layer making technology particularly.
Background technology
various hardness on surface of the glass of current vacuum film or pottery and function, all adopt " vacuum process technology mode " or " vacuum adds upper surface
uV
coating making technology mode ".This explained hereafter cost is lower, and technique belongs to novel or mutually arranges in pairs or groups with tradition.
but, also do not have from sterilizing function in currently marketed thin film layer product.But due to long use, on thin film layer, easy breed bacteria etc., can not meet the demand of particular client.
Summary of the invention
the present invention seeks to: provide a kind of from sterilization Ethylmercurichlorendimide function protecting thin film layer making technology,
assembled watch mask can be obtained
have from sterilization,
antifouling, the several functions such as anti-fingerprint, waterproof
protection
thin film layer product
.
technical scheme of the present invention is:
a kind of from sterilization Ethylmercurichlorendimide function protecting thin film layer making technology, comprise the following steps:
a.
raw material quality is checked: carry out quality inspection to raw-material finished surface cut, outward appearance cleanliness factor;
b.
vacuum apparatus vacuumizes process: be placed in tool fixture by the starting material of requirement up to specification, sends into after vacuumizing in vacuum apparatus and obtains material
a
;
c.
electricity slurry clean: by material
a
send in electricity slurry ion source apparatus, pour the first working gas simultaneously, after setting preset pressure value carries out clean, obtain material
b
;
d.
electricity slurry modifying process: pour the first working gas in upgrading Ethylmercurichlorendimide material sections, electron beam gun is by high voltage and current, and the beam energy of generation deflects to Ethylmercurichlorendimide material, makes Ethylmercurichlorendimide material be that gaseous molecular shape is at material by solid state transformation
b
surface forms thin film layer, obtains material
c
;
e
. stiffened Ethylmercurichlorendimide material stack process: pour the second working gas in stiffened function Ethylmercurichlorendimide material sections, the beam energy that electron beam gun produces deflects on the Ethylmercurichlorendimide material of stiffened function Ethylmercurichlorendimide material sections, make Ethylmercurichlorendimide material be gaseous molecular shape by solid state transformation, Ethylmercurichlorendimide material constantly deposits to material
c
on, obtain material
d
;
f.
from the process of sterilization Ethylmercurichlorendimide material stack: pour the second working gas in function Ethylmercurichlorendimide material sections, the beam energy that electron beam gun produces deflects to the Ethylmercurichlorendimide level of function Ethylmercurichlorendimide material sections
active
tiO
or
ag
on, make Ethylmercurichlorendimide level
active
tiO
or
ag
be gaseous molecular shape by solid state transformation, Ethylmercurichlorendimide level
active
tiO
or
ag
constantly deposit to material
d
on, obtain material
e
;
g.
cooling vacuum breaker process: material
e
after cooling, vacuum breaker takes out;
h.
final product quality is checked: by material
e
namely finished product is obtained after carrying out passed examination.
preferably, described first working gas is argon gas.
preferably, described second working gas is argon gas, oxygen, nitrogen.
preferably, described starting material are plastic material, glass or pottery.
preferably, described step
d
,
e
in Ethylmercurichlorendimide material be any one Ethylmercurichlorendimide level material of llowing group of materials:
siO
2
, active
tiO
,
al
2
o
3
,
zrO
2
,
nb
2
o
5
.
advantage of the present invention is:
1
, when carrying out operating of contacts for a long time, surface does not have cut, show-through material, comes off, scratches phenomenon etc., all can meet the demand of particular client.
2
, appearance color is controlled, partially not yellow, can change the color of customer demand flexibly.
3
, art production process stablize, Automation of Manufacturing Process control fraction defective lower, process rate is high.Complete whole processing procedure by an equipment, do not have translating eqipment to pick and place, carry, storage etc., the absorption problem of soft flocks dust can not be caused.
4
, finished surface can obtain has from sterilizing function (green pus liver bacterium, streptococcus aureus, intestinal bacteria, pneumobacillus and influenza bacterium).Can also obtain and there is antifouling, the several functions protection film layer product such as anti-fingerprint, waterproof.
Accompanying drawing explanation
below in conjunction with drawings and Examples, the invention will be further described:
figure
1
for the present invention is from the schema of sterilization Ethylmercurichlorendimide function protecting thin film layer making technology.
Embodiment
for making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with embodiment also with reference to accompanying drawing, the present invention is described in more detail.Should be appreciated that, these describe just exemplary, and do not really want to limit the scope of the invention.In addition, in the following description, the description to known features and technology is eliminated, to avoid unnecessarily obscuring concept of the present invention.
embodiment
1
:
as figure
1
shown in, a kind of from sterilization Ethylmercurichlorendimide function protecting thin film layer making technology, comprise the following steps:
a.
glass material quality test: quality inspection is carried out to the finished surface cut of glass material, outward appearance cleanliness factor;
b.
vacuum apparatus vacuumizes process: be placed in tool fixture by the glass material of requirement up to specification, sends into after vacuumizing in vacuum apparatus and obtains material
a
;
c.
electricity slurry clean: by material
a
send in electricity slurry ion source apparatus, pour argon gas simultaneously, after setting preset pressure value carries out clean, obtain material
b
;
d.
electricity slurry modifying process: pour argon gas in upgrading Ethylmercurichlorendimide material sections, electron beam gun is by high voltage and current, and the beam energy of generation deflects to Ethylmercurichlorendimide level
siO
2
, make Ethylmercurichlorendimide level
siO
2
be that gaseous molecular shape is at material by solid state transformation
b
surface forms thin film layer, obtains material
c
;
e
. stiffened Ethylmercurichlorendimide material stack process: pour argon gas in stiffened function Ethylmercurichlorendimide material sections, the Ethylmercurichlorendimide level that the beam energy that electron beam gun produces deflects to stiffened function Ethylmercurichlorendimide material sections is active
tiO
on, make Ethylmercurichlorendimide level active
tiO
be gaseous molecular shape by solid state transformation, Ethylmercurichlorendimide level is active
tiO
constantly deposit to material
c
on, obtain material
d
;
f.
from the process of sterilization Ethylmercurichlorendimide material stack: pour argon gas in function Ethylmercurichlorendimide material sections, the beam energy that electron beam gun produces deflects to the Ethylmercurichlorendimide level of function Ethylmercurichlorendimide material sections
ag
on, make Ethylmercurichlorendimide level
ag
be gaseous molecular shape by solid state transformation, Ethylmercurichlorendimide level
ag
constantly deposit to material
d
on, obtain material
e
; In step
f
in, the various function Ethylmercurichlorendimide materials needing in advance to obtain, constantly can deposit to material always
e
on, form the thin film layer of several functions.Such as there is antifouling, the function such as anti-fingerprint, waterproof.
g.
cooling vacuum breaker process: material
e
after cooling, vacuum breaker takes out;
h.
final product quality is checked: by material
e
namely finished product is obtained after carrying out passed examination.
embodiment
2
:
as figure
1
shown in, a kind of high rigidity Ethylmercurichlorendimide protection film layer making technology, comprises the following steps:
a.
stupalith quality test: quality inspection is carried out to the finished surface cut of stupalith, outward appearance cleanliness factor;
b.
vacuum apparatus vacuumizes process: be placed in tool fixture by the stupalith of requirement up to specification, sends into after vacuumizing in vacuum apparatus and obtains material
a
;
c.
electricity slurry clean: by material
a
send in electricity slurry ion source apparatus, pour argon gas simultaneously, after setting preset pressure value carries out clean, obtain material
b
;
d.
electricity slurry modifying process: pour argon gas in upgrading Ethylmercurichlorendimide material sections, electron beam gun is by high voltage and current, and the beam energy of generation deflects to Ethylmercurichlorendimide level
al
2
o
3
, make Ethylmercurichlorendimide level
al
2
o
3
be that gaseous molecular shape is at material by solid state transformation
b
surface forms thin film layer, obtains material
c
;
e
. stiffened Ethylmercurichlorendimide material stack process: pour nitrogen in stiffened function Ethylmercurichlorendimide material sections, the beam energy that electron beam gun produces deflects to the Ethylmercurichlorendimide level of stiffened function Ethylmercurichlorendimide material sections
zrO
2
on, make Ethylmercurichlorendimide level
zrO
2
be gaseous molecular shape by solid state transformation, Ethylmercurichlorendimide level
zrO
2
constantly deposit to material
c
on, obtain material
d
;
f.
from the process of sterilization Ethylmercurichlorendimide material stack: pour oxygen in function Ethylmercurichlorendimide material sections, the beam energy that electron beam gun produces deflects to the Ethylmercurichlorendimide level of function Ethylmercurichlorendimide material sections
active
tiO
on, make Ethylmercurichlorendimide level
active
tiO
be gaseous molecular shape by solid state transformation, Ethylmercurichlorendimide level
active
tiO
constantly deposit to material
d
on, obtain material
e
; In step
f
in, the various function Ethylmercurichlorendimide materials needing in advance to obtain, constantly can deposit to material always
e
on, form the thin film layer of several functions.Such as there is antifouling, the function such as anti-fingerprint, waterproof.
g.
cooling vacuum breaker process: material
e
after cooling, vacuum breaker takes out;
h.
final product quality is checked: by material
e
namely finished product is obtained after carrying out passed examination.
embodiment
3
:
as figure
1
shown in, a kind of from sterilization Ethylmercurichlorendimide function protecting thin film layer making technology, comprise the following steps:
a. ABS
quality of materials is checked: right
aBS
finished surface cut, the outward appearance cleanliness factor of material carry out quality inspection;
b.
vacuum apparatus vacuumizes process: by requirement up to specification
aBS
material is placed in tool fixture, sends into after vacuumizing in vacuum apparatus and obtains material
a
;
c.
electricity slurry clean: by material
a
send in electricity slurry ion source apparatus, pour argon gas simultaneously, after setting preset pressure value carries out clean, obtain material
b
;
d.
electricity slurry modifying process: pour argon gas in upgrading Ethylmercurichlorendimide material sections, electron beam gun is by high voltage and current, and the beam energy of generation deflects to Ethylmercurichlorendimide level
nb
2
o
5
, make Ethylmercurichlorendimide level
nb
2
o
5
be that gaseous molecular shape is at material by solid state transformation
b
surface forms thin film layer, obtains material
c
;
e
. stiffened Ethylmercurichlorendimide material stack process: pour oxygen in stiffened function Ethylmercurichlorendimide material sections, the beam energy that electron beam gun produces deflects to the Ethylmercurichlorendimide level of stiffened function Ethylmercurichlorendimide material sections
siO
2
on, make Ethylmercurichlorendimide level
siO
2
be gaseous molecular shape by solid state transformation, Ethylmercurichlorendimide level
siO
2
constantly deposit to material
c
on, obtain material
d
;
f.
from the process of sterilization Ethylmercurichlorendimide material stack: pour argon gas in function Ethylmercurichlorendimide material sections, the Ethylmercurichlorendimide level that the beam energy that electron beam gun produces deflects to function Ethylmercurichlorendimide material sections is active
tiO
on, make Ethylmercurichlorendimide level active
tiO
be gaseous molecular shape by solid state transformation, Ethylmercurichlorendimide level is active
tiO
constantly deposit to material
d
on, obtain material
e
; In step
f
in, the various function Ethylmercurichlorendimide materials needing in advance to obtain, constantly can deposit to material always
e
on, form the thin film layer of several functions.Such as there is antifouling, the function such as anti-fingerprint, waterproof.
g.
cooling vacuum breaker process: material
e
after cooling, vacuum breaker takes out;
h.
final product quality is checked: by material
e
namely finished product is obtained after carrying out passed examination.
it should be noted that, the starting material of making technology of the present invention can also be other plastic material.Second working gas, the collocation of actual demand function status is argon gas, oxygen, nitrogen.Step
d
,
e
in Ethylmercurichlorendimide material comprise
siO
2
, active
tiO
,
al
2
o
3
,
zrO
2
,
nb
2
o
5
in a kind of Ethylmercurichlorendimide level material, with successively different order storehouse.
should be understood that, above-mentioned embodiment of the present invention only for exemplary illustration or explain principle of the present invention, and is not construed as limiting the invention.Therefore, any amendment made when without departing from the spirit and scope of the present invention, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.In addition, claims of the present invention be intended to contain fall into claims scope and border or this scope and border equivalents in whole change and modification.
Claims (5)
1., from a sterilization Ethylmercurichlorendimide function protecting thin film layer making technology, it is characterized in that, comprise the following steps:
A. raw material quality inspection: quality inspection is carried out to raw-material finished surface cut, outward appearance cleanliness factor;
B. vacuum apparatus vacuumizes process: be placed in tool fixture by the starting material of requirement up to specification, sends into after vacuumizing in vacuum apparatus and obtains materials A;
C. electricity slurry clean: materials A is sent in electricity slurry ion source apparatus, pour the first working gas simultaneously, obtain material B after setting preset pressure value carries out clean;
D. electricity slurry modifying process: pour the first working gas in upgrading Ethylmercurichlorendimide material sections, electron beam gun passes through high voltage and current, the beam energy produced deflects to Ethylmercurichlorendimide material, makes Ethylmercurichlorendimide material be that gaseous molecular shape forms thin film layer on material B surface by solid state transformation, obtains material C;
E. stiffened Ethylmercurichlorendimide material stack process: pour the second working gas in stiffened function Ethylmercurichlorendimide material sections, the beam energy that electron beam gun produces deflects on the Ethylmercurichlorendimide material of stiffened function Ethylmercurichlorendimide material sections, Ethylmercurichlorendimide material is made to be gaseous molecular shape by solid state transformation, Ethylmercurichlorendimide material constantly deposits in material C, obtains material D;
F. from the process of sterilization Ethylmercurichlorendimide material stack: pour the second working gas in function Ethylmercurichlorendimide material sections, the beam energy that electron beam gun produces deflects on active TiO or Ag of Ethylmercurichlorendimide level of function Ethylmercurichlorendimide material sections, active TiO or Ag of Ethylmercurichlorendimide level is made to be gaseous molecular shape by solid state transformation, active TiO or Ag of Ethylmercurichlorendimide level constantly deposits on material D, obtains material E;
G. cool vacuum breaker process: after material E cools, vacuum breaker takes out;
H. final product quality inspection: namely obtain finished product after material E is carried out passed examination.
2. according to claim 1 from sterilization Ethylmercurichlorendimide function protecting thin film layer making technology, it is characterized in that, described first working gas is argon gas.
3. according to claim 1 from sterilization Ethylmercurichlorendimide function protecting thin film layer making technology, it is characterized in that, described second working gas is argon gas, oxygen, nitrogen.
4. according to claim 1 from sterilization Ethylmercurichlorendimide function protecting thin film layer making technology, it is characterized in that, described starting material are plastic material, glass or pottery.
5. according to claim 1ly it is characterized in that from sterilization Ethylmercurichlorendimide function protecting thin film layer making technology, the Ethylmercurichlorendimide material in described steps d, e is any one Ethylmercurichlorendimide level material: SiO of llowing group of materials
2, active TiO, Al
2o
3, ZrO
2, Nb
2o
5.
Priority Applications (1)
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|---|---|---|---|
| CN201510227733.3A CN104818455A (en) | 2015-05-07 | 2015-05-07 | Processing method of self-sterilizing angstrom-scale functional protective thin film layer |
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|---|---|---|---|
| CN201510227733.3A CN104818455A (en) | 2015-05-07 | 2015-05-07 | Processing method of self-sterilizing angstrom-scale functional protective thin film layer |
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|---|---|
| CN104818455A true CN104818455A (en) | 2015-08-05 |
Family
ID=53728932
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|---|---|---|---|
| CN201510227733.3A Pending CN104818455A (en) | 2015-05-07 | 2015-05-07 | Processing method of self-sterilizing angstrom-scale functional protective thin film layer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110625130A (en) * | 2019-10-11 | 2019-12-31 | 深圳埃米迦医药生物科技有限公司 | Eimeria silver, external gel of Eimeria silver, preparation method and application |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110625130A (en) * | 2019-10-11 | 2019-12-31 | 深圳埃米迦医药生物科技有限公司 | Eimeria silver, external gel of Eimeria silver, preparation method and application |
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| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150805 |
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| RJ01 | Rejection of invention patent application after publication |