CN108149196A - A kind of preparation method of N doping p-type ZnO film - Google Patents
A kind of preparation method of N doping p-type ZnO film Download PDFInfo
- Publication number
- CN108149196A CN108149196A CN201711415408.5A CN201711415408A CN108149196A CN 108149196 A CN108149196 A CN 108149196A CN 201711415408 A CN201711415408 A CN 201711415408A CN 108149196 A CN108149196 A CN 108149196A
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- nitrogen
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- zno film
- column
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
Abstract
The present invention discloses a kind of preparation method of N doping p-type ZnO film, includes the following steps：S1, cleaning substrate；S2, using magnetic-controlled sputtering coating equipment, using ZnO ceramic targets as target, the substrate merging magnetron sputtered vacuum intracavitary after cleaning is passed through sputter gas argon gas, oxygen and nitrogen, N doping p-type ZnO film is prepared by magnetron sputtering；The volume ratio of argon gas, oxygen and nitrogen is 20：6：0.5；Nitrogen is passed through using annular feeder, annular feeder includes the horizontal annular cake column for being set on magnetron sputtered vacuum intracavitary, annular cake column is hollow, and the internal ring wall of annular cake column is equipped with one group of venthole, and annular cake column is also associated with extending the air supply pipe of magnetron sputtered vacuum chamber；During magnetron sputtering, the annular cake band of column is around encirclement substrate；Directly using nitrogen as doped source, while change the plenum system of nitrogen, it is only necessary to which a small amount of nitrogen just can reach the ionization of nitrogen, and is easily incorporated into ZnO film and realizes p-type transformation, obtain p-type ZnO film.
Description
Technical field
The present invention relates to conductive film preparing technical field, the preparation method of specifically a kind of N doping p-type ZnO film.
Background technology
ZnO film is a kind of direct band-gap semicondictor material, has excellent piezoelectricity, air-sensitive performance and high chemistry surely
It is qualitative, thus using relatively broad in photoelectron element.ZnO causes it to be led for natural N-shaped due to self-defect
Electricity.But the key of numerous optical device manufactures is to need high hole concentration and the p-type ZnO film of certain resistivity.
Prepare the p-type ZnO film of high quality, it is necessary to introduce new acceptor impurity to inhibit self-compensation mechanism, carry simultaneously
High acceptor concentration is prepared extremely difficult.
Invention content
The purpose of the present invention is to provide a kind of preparation method of N doping p-type ZnO film, this method uses nitrogen as
Doped chemical prepares p-type ZnO film, and preparation process is simple, and film performance is stablized.
The technical solution adopted by the present invention to solve the technical problems is：
A kind of preparation method of N doping p-type ZnO film, includes the following steps：
S1, cleaning substrate, remove substrate surface dirt；
S2, magnetic-controlled sputtering coating equipment, using ZnO ceramic targets as target, the substrate merging magnetron sputtered vacuum after cleaning are used
Intracavitary, when vacuum degree meets the requirements, is passed through sputter gas argon gas, oxygen and nitrogen, and nitrogen, which is prepared, by magnetron sputtering mixes
Miscellaneous p-type ZnO film；The volume ratio of argon gas, oxygen and nitrogen is 20：6：0.5；
The nitrogen is passed through using annular feeder, and annular feeder includes level and is set on magnetron sputtered vacuum intracavitary
Annular cake column, annular cake column are hollow, and the internal ring wall of annular cake column is equipped with one group of venthole, and annular cake column is also associated with extending
The air supply pipe of magnetron sputtered vacuum chamber；During magnetron sputtering, the annular cake band of column is around encirclement substrate.
Further, vacuum degree is 2.0*10 during step S2 magnetron sputterings-4Pa, the total amount of argon gas, oxygen and nitrogen are
30sccm, operating air pressure 0.5Pa, sputtering power 200W.
The beneficial effects of the invention are as follows：Directly using nitrogen as doped source, while change the plenum system of nitrogen, one side of nitrogen
Face performance is relatively stablized, and is not easy to react with other gases such as oxygen；Another aspect nitrogen has the advantages such as nontoxic, easy purification,
Other p-type doped sources cannot compare.Simultaneously as the change of plenum system, it is only necessary to which a small amount of nitrogen just can reach
The ionization of nitrogen, and be easily incorporated into ZnO film and realize p-type transformation, obtain p-type ZnO film.
Description of the drawings
The present invention is further described with reference to the accompanying drawings and examples：
Fig. 1 is the schematic diagram of the present invention；
Fig. 2 is the stereoscopic schematic diagram of annular feeder of the invention.
Specific embodiment
As shown in Figure 1, the present invention provides a kind of preparation method of N doping p-type ZnO film, include the following steps：
S1, cleaning substrate 1, remove 1 surface smut of substrate；
Common glass slide can be selected as substrate, it is clear that ultrasonic wave is carried out to substrate respectively with acetone, alcohol, deionized water successively
It washes, then the grease and dirt on 1 surface of removal substrate are done with wind；
S2, using magnetic-controlled sputtering coating equipment, using ZnO ceramic targets 2 as target, it is true that the substrate 1 after cleaning is placed in magnetron sputtering
In cavity 3；It opens magnetic-controlled sputtering coating equipment and vacuumizes, when vacuum degree meets the requirements, the present embodiment vacuum degree is 2.0*
10-4Pa is passed through sputter gas argon gas, makes target build-up of luminance, removes target material surface greasy dirt impurity and activation target；Then it is passed through oxygen again
Gas and nitrogen, under the premise of the total amount for ensureing argon gas, oxygen and nitrogen is 30sccm, the volume ratio of argon gas, oxygen and nitrogen
It is 20：6：0.5, during magnetron sputtering, operating air pressure 0.5Pa, sputtering power 200W, sputtering time 30min finally obtain N doping
P-type ZnO film；
With reference to shown in Fig. 2, the nitrogen is passed through using annular feeder, and annular feeder includes level and splashed set on magnetic control
The annular cake column 4 in vacuum chamber 3 is penetrated, annular cake column 4 is hollow, and the internal ring wall of annular cake column 4 is equipped at intervals with one group of venthole 4a,
Venthole 4a is along the rounded distribution of internal ring wall；Annular cake column 4 is also associated with extending the air supply pipe 6 of magnetron sputtered vacuum chamber 3；Nitrogen
Gas enters annular cake column 4, then enter magnetron sputtered vacuum chamber 3 through venthole 4a by air supply pipe 6.During specific setting, company can be passed through
Annular feeder is suspended in magnetron sputtered vacuum chamber 3 by bar 5；As preference, during magnetron sputtering, annular cake column 4 is surround
Substrate 1 is surrounded, the position of venthole 4a is slightly below substrate 1.
The above described is only a preferred embodiment of the present invention, not make limitation in any form to the present invention；Appoint
What those skilled in the art, without departing from the scope of the technical proposal of the invention, all using the side of the disclosure above
Method and technology contents make technical solution of the present invention many possible changes and modifications or are revised as the equivalent reality of equivalent variations
Apply example.Therefore, every content without departing from technical solution of the present invention, technical spirit according to the present invention do above example
Any simple modification, equivalent replacement, equivalence changes and modification, still fall within technical solution of the present invention protection in the range of.
Claims (2)
1. a kind of preparation method of N doping p-type ZnO film, which is characterized in that include the following steps：
S1, cleaning substrate, remove substrate surface dirt；
S2, magnetic-controlled sputtering coating equipment, using ZnO ceramic targets as target, the substrate merging magnetron sputtered vacuum after cleaning are used
Intracavitary, when vacuum degree meets the requirements, is passed through sputter gas argon gas, oxygen and nitrogen, and nitrogen, which is prepared, by magnetron sputtering mixes
Miscellaneous p-type ZnO film；The volume ratio of argon gas, oxygen and nitrogen is 20：6：0.5；
The nitrogen is passed through using annular feeder, and annular feeder includes level and is set on magnetron sputtered vacuum intracavitary
Annular cake column, annular cake column are hollow, and the internal ring wall of annular cake column is equipped with one group of venthole, and annular cake column is also associated with extending
The air supply pipe of magnetron sputtered vacuum chamber；During magnetron sputtering, the annular cake band of column is around encirclement substrate.
A kind of 2. preparation method of N doping p-type ZnO film according to claim 1, which is characterized in that step S2 magnetic controls
Vacuum degree is 2.0*10 during sputtering-4Pa, the total amount of argon gas, oxygen and nitrogen are 30sccm, operating air pressure 0.5Pa, sputtering power
200W。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711415408.5A CN108149196A (en) | 2017-12-25 | 2017-12-25 | A kind of preparation method of N doping p-type ZnO film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711415408.5A CN108149196A (en) | 2017-12-25 | 2017-12-25 | A kind of preparation method of N doping p-type ZnO film |
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| Publication Number | Publication Date |
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| CN108149196A true CN108149196A (en) | 2018-06-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711415408.5A Withdrawn CN108149196A (en) | 2017-12-25 | 2017-12-25 | A kind of preparation method of N doping p-type ZnO film |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112593193A (en) * | 2020-11-16 | 2021-04-02 | 中建材蚌埠玻璃工业设计研究院有限公司 | Vacuum magnetron sputtering coating equipment and coating method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102212792A (en) * | 2011-06-15 | 2011-10-12 | 蚌埠玻璃工业设计研究院 | Method for preparing nitrogen-doped P-type zinc oxide film in one step by using nitrogen as doping source |
| CN102787302A (en) * | 2011-05-18 | 2012-11-21 | 中国科学院微电子研究所 | Gas uniformizing device for improving film preparation technology |
-
2017
- 2017-12-25 CN CN201711415408.5A patent/CN108149196A/en not_active Withdrawn
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102787302A (en) * | 2011-05-18 | 2012-11-21 | 中国科学院微电子研究所 | Gas uniformizing device for improving film preparation technology |
| CN102212792A (en) * | 2011-06-15 | 2011-10-12 | 蚌埠玻璃工业设计研究院 | Method for preparing nitrogen-doped P-type zinc oxide film in one step by using nitrogen as doping source |
Non-Patent Citations (4)
| Title |
|---|
| MING-LUNG TU等: ""Nitrogen-doped p-type ZnO films prepared from nitrogen gas radio frequency magnetron sputtering"", 《JOURNAL OF APPLIED PHYSICS》 * |
| 王超 等: ""衬底温度对直流反应磁控溅射法制备的N掺杂p型ZnO薄膜性能的影响"", 《人工晶体学报》 * |
| 郭松林 等: ""P型氮掺杂ZnO薄膜的光学特性研究"", 《真空》 * |
| 陈奇 等: ""掺氮氧化锌薄膜的P型转变研究"", 《牡丹江师范学院学报(自然科学版)》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112593193A (en) * | 2020-11-16 | 2021-04-02 | 中建材蚌埠玻璃工业设计研究院有限公司 | Vacuum magnetron sputtering coating equipment and coating method thereof |
| CN112593193B (en) * | 2020-11-16 | 2022-12-09 | 中建材玻璃新材料研究院集团有限公司 | Vacuum magnetron sputtering coating equipment and coating method thereof |
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Application publication date: 20180612 |