CN105336640A - Reaction cavity and reaction equipment - Google Patents
Reaction cavity and reaction equipment Download PDFInfo
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- CN105336640A CN105336640A CN201410269591.2A CN201410269591A CN105336640A CN 105336640 A CN105336640 A CN 105336640A CN 201410269591 A CN201410269591 A CN 201410269591A CN 105336640 A CN105336640 A CN 105336640A
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- reaction chamber
- covering
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- reaction
- pedestal
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Abstract
The invention provides a reaction cavity and reaction equipment. The reaction cavity comprises a pedestal for bearing a processed workpiece and a process assembly. The process assembly contains a shielding member having an upper shielding member and a lower shielding member; the bottom of the lower shielding member has a U-shaped groove structure encircling the bottom of the upper shielding member; and at least one first pore is formed in the lower part of one side, approaching the side wall of the reaction cavity, of the U-shaped groove. According to the technical scheme, the first pore is formed in the bottom of the lower shielding member by approaching an inlet of an air source, so that reaction gas can be led into a processing area directly. Therefore, the reaction gas can be diffused to the reaction chamber uniformly and fully, thereby influencing the proportion component of the reaction gas in the reaction cavity and improving the diffusion effect and uniformity of the reaction gas entering the reaction cavity and thus obtaining a better thin film.
Description
Technical field
The present invention relates to semiconductor process techniques field, particularly relate to a kind of reaction chamber and consersion unit.
Background technology
In the manufacture of integrated circuit and display, be placed in reaction chamber by the substrate of such as semiconductor wafer cartridge display floater, the process conditions in setting reaction chamber are with deposition materials over the substrate or etch this substrate.Typical reaction chamber comprise the peripheral wall around heating region, the substrate support for support substrates, for provide in chamber process gas source of the gas, to gas exerts energy to process the gas activator of substrate, and for keeping the exhaust apparatus of pressure.This reaction chamber can comprise sputtering (PVD), chemical vapour deposition (CVD) (CVD) and etching cavity.
In sputtering technology, the process gas comprising inert gas and/or reacting gas is fed in reaction chamber, and electrical bias is applied to target, promote that sputter material to hit and in substrate film forming from target to form high-energy particle bombardment target.But target material also deposits on the element of the indoor such as chamber wall, and becomes pollutant sources.Therefore need in chamber to arrange sputter material can be prevented to be deposited directly to technique component in chamber wall and other chamber components.
Fig. 1 is the structural representation of reaction chamber in prior art.As shown in Figure 1, reaction chamber 100 comprises chamber wall 102, technique component 200 and pedestal 106.Technique component 200 and pedestal 106 surround formation processing region 101.Chamber wall 102 comprises chamber body 103 and sidewall 104.The part A schematic enlarged-scale view that Fig. 2 is reaction chamber shown in Fig. 1.As shown in Figure 2, technique component 200 comprises covering 201, shield ring 202 and deposition ring 203.Fig. 3 is the structural representation of covering in prior art.As shown in Figure 3, covering 201 comprises covering 211 and lower covering 221.The middle part of lower covering 221 has pore 204.Reacting gas enters reaction chamber 100 from gas source inlet 105, after the pore 204 in the middle part of lower covering 221, goes further downwards to the bottom of covering 211, enters processing region 101 by the gap, bottom of upper covering 211.By above-mentioned intake method, what reacting gas can not be full and uniform diffuses to reaction chamber 100, to such an extent as to has influence on the character of deposit film at Waffer edge, thus obtains the poor film of uniformity.
Summary of the invention
The invention provides a kind of reaction chamber and consersion unit, reaction chamber is diffused to for what solve that intake method of the prior art makes that reacting gas can not be full and uniform, to such an extent as to have influence on the character of deposit film at Waffer edge, the problem that the uniformity of film of acquisition is poor.
For achieving the above object, the invention provides a kind of reaction chamber, comprise the pedestal for carrying workpiece to be machined and technique component, described technique component comprises covering, described covering comprises covering and lower covering, described lower covering is looped around the inside sidewalls of described reaction chamber, described upper covering is looped around inside described lower covering, the bottom of described lower covering is U-type groove structure, described U-lag surrounds the bottom of described upper covering, and described U-lag has at least one first pore near the bottom of the side of described reaction chamber sidewall.
Preferably, the bottom of described upper covering is for falling " Z " type structure, and what the U-lag of described lower covering was looped around described upper covering away from the side of described reaction chamber sidewall falls inside " Z " type structure.
Preferably, " Z " type structure of falling bottom described upper covering has at least one second pore away from the bottom of the side of described reaction chamber sidewall.
Preferably, described first pore does not overlap with the projection of the second pore in described reaction chamber sidewall direction.
Preferably, described technique component also comprises shield ring, and described shield ring is positioned at the top at the edge of described pedestal upper surface towards one end of pedestal, described shield ring is
type.
Preferably, described shield ring comprises inner ring and outer shroud, and described inner ring and outer shroud define downward openend, and the U-lag of described lower covering is positioned at described openend away from the side of described reaction chamber sidewall.
Preferably, described shield ring is positioned at away from one end of pedestal and falls the top of " Z " type structure away from the side of described reaction chamber sidewall bottom described upper covering.
Preferably, multiple described first pore to be evenly arranged on bottom described lower covering U-type groove near the bottom of the side of described reaction chamber sidewall.
Preferably, multiple described second pore is evenly arranged on bottom described upper covering and falls " Z " type structure away from the side of described reaction chamber sidewall.
The present invention also provides a kind of consersion unit, comprises above-mentioned arbitrary reaction chamber.
The present invention has following beneficial effect:
In the technical scheme of reaction chamber provided by the invention, gas source inlet is closed in the bottom that the first pore is opened in lower covering, and reacting gas directly can enter processing region.By above-mentioned intake method, reacting gas can be full and uniform diffuse to reaction chamber, to such an extent as to affect the proportional components of reacting gas in reaction chamber and improve diffusion effect and the uniformity that reacting gas enters reaction chamber, thus obtain better film.
Accompanying drawing explanation
Fig. 1 is the structural representation of reaction chamber in prior art;
The part A schematic enlarged-scale view that Fig. 2 is reaction chamber shown in Fig. 1;
Fig. 3 is the structural representation of covering in prior art;
The structural representation of a kind of reaction chamber that Fig. 4 provides for one embodiment of the invention;
The part B schematic enlarged-scale view that Fig. 5 is reaction chamber shown in Fig. 4;
The structural representation of a kind of covering that Fig. 6 provides for one embodiment of the invention;
The structural representation of the upper covering that Fig. 7 is covering shown in Fig. 6;
The structural representation of the lower covering that Fig. 8 is covering shown in Fig. 6.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, below in conjunction with accompanying drawing, reaction chamber provided by the invention and consersion unit are described in detail.
The structural representation of a kind of reaction chamber that Fig. 4 provides for one embodiment of the invention.As shown in Figure 4, reaction chamber 100 comprises technique component 200.Preferably, reaction chamber 100 also comprises chamber wall 102 and pedestal 106.Technique component 200 and pedestal 106 surround formation processing region 101.Chamber wall 102 comprises chamber body 103 and sidewall 104.The part B schematic enlarged-scale view that Fig. 5 is reaction chamber shown in Fig. 4.As shown in Figure 5, technique component 200 comprises covering 201.Described covering 201 comprises covering 211 and lower covering 221.Described lower covering ring 221 is around the inside sidewalls of described reaction chamber 100, described upper covering 211 is looped around inside described lower covering, the bottom of described lower covering 221 is U-type groove structure, described U-lag surrounds the bottom of described upper covering 211, and described U-lag has at least one first pore 205 near the bottom of the side of described reaction chamber sidewall.Preferably, the bottom of described upper covering 211 is for falling " Z " type structure, and what the U-lag of described lower covering 221 was looped around described upper covering 211 away from the side of described reaction chamber sidewall falls inside " Z " type structure.Least significant end and the lower covering 221 of the bottom of described upper covering 211 form gap.
In one embodiment, technique component 200 also comprises deposition ring 203, and described deposition ring 203 to be positioned on pedestal 106 and around pedestal 106.In another embodiment, described technique component 200 also comprises shield ring 202, and described shield ring 202 is positioned at the top at the edge of described pedestal upper surface towards one end of pedestal 106, described shield ring 202 is
type.Pedestal 106 is connected to the bottom of reaction chamber 100 by elevating mechanism, and described elevating mechanism can mobile foundation 106 up and between lower position.Up during position, deposition ring 203 can engage with shield ring 202, up moves to process position and can mention shield ring 202 from lower covering 221 along with pedestal 106.When lower position, pedestal 106 is placed in below lower covering 221, and lower covering 221 again engages with shield ring 202 and shield ring 202 is overhang above pedestal 106.
The structural representation of a kind of covering that Fig. 6 provides for one embodiment of the invention, the structural representation of the upper covering that Fig. 7 is covering shown in Fig. 6, the structural representation of the lower covering that Fig. 8 is covering shown in Fig. 6.As shown in Figure 8, the bottom of described lower covering 221 is U-type groove structure, and described U-lag surrounds the bottom of described upper covering 211, and described U-lag has at least one first pore 205 near the bottom of the side of described reaction chamber sidewall.Preferably, described first pore 205 is square.Certainly, described first pore also can be other any shape in actual applications, such as, circular.Preferably, multiple described first pore 221 to be evenly arranged on bottom described lower covering U-type groove near the bottom of the side of described reaction chamber sidewall.As shown in Figure 7, " Z " type structure of falling bottom described upper covering has at least one second pore 206 away from the bottom of the side of described reaction chamber sidewall.Preferably, described second pore 206 is square.Certainly, described second pore also can be other any shape in actual applications, such as, circular.Preferably, multiple described second pore 206 is evenly arranged on bottom described upper covering and falls " Z " type structure away from the side of described reaction chamber sidewall.The covering that the present embodiment provides changes the air inlet route of reacting gas, gas source inlet 105 is closed in the bottom that first pore 205 is opened in lower covering, and reacting gas directly can enter processing region 101 by the second pore 206 of the least significant end of the bottom of upper covering 211.In addition, compared to passing through gap, reacting gas is more easily by pore.By above-mentioned intake method, reacting gas can be full and uniform diffuse to reaction chamber, to such an extent as to affect the proportional components of reacting gas in reaction chamber and improve diffusion effect and the uniformity that reacting gas enters reaction chamber, thus obtain the better film of technological effect.
As shown in Figure 6, the first pore 221 does not overlap with the projection of the second pore 211 in described reaction chamber sidewall direction, namely goes up covering 211 and offers pore with lower covering 221 is interlaced.Said structure can avoid Chen Ji Dao Chi locular wall 102.Preferably, the partially overlapping of upper covering 211 and lower covering 221 first pore more than 205.
As shown in Figure 5, shield ring 202 also comprises inner ring 212 and outer shroud 222.Inner ring 212 and outer shroud 222 define downward openend in mode spaced apart, and the U-lag of described lower covering 221 is positioned at described openend away from the side of described reaction chamber sidewall, and the end of described openend and lower covering 221 is engaged with each other.Make like this
type shield ring and upper covering, lower covering protect the first pore 221 and the second pore 206 jointly, prevent from depositing to chamber wall 102.
In one embodiment, use anti-Ying Chi room 100 sputtered with Ti N, reacting gas is N2 and Ar, and wherein, Ar is used for sputtering target material.Reacting gas is passed into reaction chamber 100 in same time, and after testing, the uniformity of the film rectangular resistance that the technique component using the present embodiment to provide obtains is than the technique component about 1% using prior art to provide.
In the technical scheme of reaction chamber provided by the invention, gas source inlet is closed in the bottom that the first pore is opened in lower covering, and reacting gas directly can enter processing region.By above-mentioned intake method, reacting gas can be full and uniform diffuse to reaction chamber, to such an extent as to affect the proportional components of reacting gas in reaction chamber and improve diffusion effect and the uniformity that reacting gas enters reaction chamber, thus obtain better film.
The present invention also provides a kind of consersion unit, comprises above-mentioned arbitrary reaction chamber.In the technical scheme of consersion unit provided by the invention, gas source inlet is closed in the bottom that the first pore is opened in lower covering, and reacting gas directly can enter processing region.By above-mentioned intake method, reacting gas can be full and uniform diffuse to reaction chamber, to such an extent as to affect the proportional components of reacting gas in reaction chamber and improve diffusion effect and the uniformity that reacting gas enters reaction chamber, thus obtain better film.
Be understandable that, the illustrative embodiments that above execution mode is only used to principle of the present invention is described and adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (10)
1. a reaction chamber, comprise the pedestal for carrying workpiece to be machined and technique component, it is characterized in that, described technique component comprises covering, described covering comprises covering and lower covering, described lower covering is looped around the inside sidewalls of described reaction chamber, described upper covering is looped around inside described lower covering, the bottom of described lower covering is U-type groove structure, described U-lag surrounds the bottom of described upper covering, and described U-lag has at least one first pore near the bottom of the side of described reaction chamber sidewall.
2. reaction chamber according to claim 1, it is characterized in that, the bottom of described upper covering is for falling " Z " type structure, and what the U-lag of described lower covering was looped around described upper covering away from the side of described reaction chamber sidewall falls inside " Z " type structure.
3. reaction chamber according to claim 2, is characterized in that, " Z " type structure of falling bottom described upper covering has at least one second pore away from the bottom of the side of described reaction chamber sidewall.
4. reaction chamber according to claim 3, is characterized in that, described first pore does not overlap with the projection of the second pore in described reaction chamber sidewall direction.
5. according to described reaction chamber arbitrary in claim 1-4, it is characterized in that, described technique component also comprises shield ring, and described shield ring is positioned at the top at the edge of described pedestal upper surface towards one end of pedestal, described shield ring is
type.
6. reaction chamber according to claim 5, is characterized in that, described shield ring comprises inner ring and outer shroud;
Described inner ring and outer shroud define downward openend, and the U-lag of described lower covering is positioned at described openend away from the side of described reaction chamber sidewall.
7. reaction chamber according to claim 5, is characterized in that, described shield ring is positioned at away from one end of pedestal and falls the top of " Z " type structure away from the side of described reaction chamber sidewall bottom described upper covering.
8. according to described reaction chamber arbitrary in claim 1-4, it is characterized in that, multiple described first pore to be evenly arranged on bottom described lower covering U-type groove near the bottom of the side of described reaction chamber sidewall.
9. the reaction chamber according to claim 3 or 4, is characterized in that, multiple described second pore is evenly arranged on bottom described upper covering and falls " Z " type structure away from the side of described reaction chamber sidewall.
10. a consersion unit, comprises arbitrary described reaction chamber in claim 1-9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410269591.2A CN105336640B (en) | 2014-06-17 | 2014-06-17 | A kind of reaction chamber and consersion unit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410269591.2A CN105336640B (en) | 2014-06-17 | 2014-06-17 | A kind of reaction chamber and consersion unit |
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| Publication Number | Publication Date |
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| CN105336640A true CN105336640A (en) | 2016-02-17 |
| CN105336640B CN105336640B (en) | 2018-12-11 |
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| CN201410269591.2A Active CN105336640B (en) | 2014-06-17 | 2014-06-17 | A kind of reaction chamber and consersion unit |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109811406A (en) * | 2017-11-20 | 2019-05-28 | 北京北方华创微电子装备有限公司 | Quartz piece, processing chamber and semiconductor processing equipment |
| CN110556308A (en) * | 2018-06-01 | 2019-12-10 | 北京北方华创微电子装备有限公司 | Valve protection mechanism, process chamber and semiconductor equipment |
| WO2024050727A1 (en) * | 2022-09-07 | 2024-03-14 | Innoscience (suzhou) Semiconductor Co., Ltd. | Nitride-based wafer chemical vapor deposition device and deposition method of the same |
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| US20030150720A1 (en) * | 2002-02-14 | 2003-08-14 | Green Gordon Robert | Plasma processing apparatus |
| US20050199491A1 (en) * | 2001-11-14 | 2005-09-15 | Tza-Jing Gung | Shields usable with an inductively coupled plasma reactor |
| US20080178801A1 (en) * | 2007-01-29 | 2008-07-31 | Applied Materials, Inc. | Process kit for substrate processing chamber |
| CN103348446A (en) * | 2011-02-09 | 2013-10-09 | 应用材料公司 | Uniformity tuning capable ESC grounding kit for RF PVD chamber |
-
2014
- 2014-06-17 CN CN201410269591.2A patent/CN105336640B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050199491A1 (en) * | 2001-11-14 | 2005-09-15 | Tza-Jing Gung | Shields usable with an inductively coupled plasma reactor |
| US20030150720A1 (en) * | 2002-02-14 | 2003-08-14 | Green Gordon Robert | Plasma processing apparatus |
| US20080178801A1 (en) * | 2007-01-29 | 2008-07-31 | Applied Materials, Inc. | Process kit for substrate processing chamber |
| CN103348446A (en) * | 2011-02-09 | 2013-10-09 | 应用材料公司 | Uniformity tuning capable ESC grounding kit for RF PVD chamber |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109811406A (en) * | 2017-11-20 | 2019-05-28 | 北京北方华创微电子装备有限公司 | Quartz piece, processing chamber and semiconductor processing equipment |
| CN110556308A (en) * | 2018-06-01 | 2019-12-10 | 北京北方华创微电子装备有限公司 | Valve protection mechanism, process chamber and semiconductor equipment |
| CN110556308B (en) * | 2018-06-01 | 2021-12-17 | 北京北方华创微电子装备有限公司 | Valve protection mechanism, process chamber and semiconductor equipment |
| WO2024050727A1 (en) * | 2022-09-07 | 2024-03-14 | Innoscience (suzhou) Semiconductor Co., Ltd. | Nitride-based wafer chemical vapor deposition device and deposition method of the same |
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| Publication number | Publication date |
|---|---|
| CN105336640B (en) | 2018-12-11 |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Applicant after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Applicant before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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