KR20100079482A

KR20100079482A - Sputtering apparatus

Info

Publication number: KR20100079482A
Application number: KR1020080137988A
Authority: KR
Inventors: 김건희
Original assignee: 주식회사 동부하이텍
Priority date: 2008-12-31
Filing date: 2008-12-31
Publication date: 2010-07-08

Abstract

PURPOSE: A sputtering device is provided to improve plasma density, perform an efficient sputtering process, and prevent damage to a substrate due to plasma. CONSTITUTION: A sputtering device comprises a first target(200), a second target(500), a first magnet(400), a first electrode(300), a second magnet(700), and a second electrode(600). The second target is placed on the first target and faces the first target. The first magnet is placed under the first target. The first electrode is placed around the first target. The second magnet is placed on the second target. The second electrode is placed around the second target. The first target and the second target comprise the same material or the different material.

Description

Sputtering Device {SPUTTERING APPARATUS}

Embodiments relate to a sputtering apparatus.

Usually, a metal film on a wafer is formed by a CVD (Chemical Vapor Deposition) process, a sputtering process, or the like. The sputtering process forms a reaction gas such as argon (Ar) gas, which is supplied into the process chamber, in a plasma state, so that a target atom from which a cation or neutron in the plasma state collides with a target and bounces off a target atom It is deposited on. In particular, the sputtering process is mainly used in the semiconductor device manufacturing process because it has advantages such as easy control of the deposition rate of the metal film deposited on the wafer, excellent surface properties, and the use of almost any material as a target. It is used.

In addition, as the semiconductor device has recently been highly integrated, as the aspect ratio of the contact is increased and the wafer is largely enlarged, a target atom scattered around the wafer by installing a collimator between the wafer and the target is provided. By filtering only the target atoms having straightness to be deposited on the wafer, or by increasing the distance between the target and the wafer, only the target atoms having straightness are deposited on the wafer to improve the step coverage of the metal film. .

Embodiments provide a sputtering apparatus that prevents impurities from being deposited on a substrate and minimizes plasma damage occurring at the substrate.

Sputtering apparatus according to the embodiment comprises a first target; A second target disposed on the first target and facing the first target; A first magnet disposed below the first target; A first electrode disposed around the first target; A second magnet disposed on the second target; And a second electrode disposed around the second target.

The sputtering apparatus according to the embodiment proceeds with the sputtering process using two targets facing each other. Accordingly, the substrate is not disposed in an area where the two targets face each other, but is disposed on the side of the first target and the second target.

Thus, the sputtering apparatus according to the embodiment prevents impurity particles falling to the first target or the second target from being deposited on the substrate.

In addition, a plasma is formed between the first target and the second target, and between the first electrode and the second electrode, and the substrate is disposed on the side of the region where the plasma is formed.

Thus, the sputtering apparatus according to the embodiment prevents the substrate from being damaged by the plasma.

In addition, the sputtering apparatus according to the embodiment proceeds with the sputtering process using two targets facing each other, thereby improving the plasma density and performing an efficient sputtering process.

In the description of the embodiments, each substrate, chamber, electrode, target, or magnet is described as being formed "on" or "under" of each substrate, chamber, electrode, target, or magnet. In the case, “on” and “under” include both being formed “directly” or “indirectly” through other components. In addition, the upper or lower reference of each component is described with reference to the drawings. The size of each component in the drawings may be exaggerated for the sake of explanation and does not mean the size actually applied.

1 illustrates a sputtering apparatus according to an embodiment. 2 is a perspective view illustrating a first sputtering target, a second sputtering target, a first electrode, and a second electrode.

1 and 2, the sputtering apparatus includes a chamber 100, a first sputtering target 200, a first electrode 300, a first magnet 400, a second sputtering target 500, and a second electrode. 600 and the second magnet 700.

The chamber 100 includes the first sputtering target 200, the first electrode 300, the first magnet 400, the second sputtering target 500, the second electrode 600, and the first electrode. The first magnet 400, the second sputtering target 500, the second electrode 600, and the second magnet 700 are accommodated.

In addition, the chamber 100 may further include a pump for supplying a reaction gas such as argon gas into the chamber 100 and a vacuum pump for discharging the reaction gas inside the chamber 100.

The first sputtering target 200 is disposed inside the chamber 100. In more detail, the first sputtering target 200 is disposed below the chamber 100.

The first electrode 300 is disposed around the first sputtering target 200. In more detail, the first electrode 300 may cover the side surface of the first sputtering target 200. The first electrode 300 is spaced apart from the first sputtering target 200. The first electrode 300 may have a closed loop shape.

The first magnet 400 is disposed below the first sputtering target 200. The S pole of the first magnet 400 faces the first sputtering target 200. The first magnet 400 may be fixed.

Alternatively, the first magnet 400 may rotate.

The second sputtering target 500 is disposed inside the chamber 100. The second sputtering target 500 is disposed on the first sputtering target 200. The second sputtering target 500 faces away from the first sputtering target 200. That is, a predetermined space is formed between the first sputtering target 200 and the second sputtering target 500.

The first sputtering target 200 and the second sputtering target 500 are made of the same material.

Alternatively, the first sputtering target 200 and the second sputtering target 500 may be made of different materials.

The second electrode 600 is disposed around the second sputtering target 500. The second electrode 600 may face the first electrode 300. The second electrode 600 may surround the side surface of the second sputtering target 500.

The second electrode 600 may be spaced apart from the second sputtering target 500, and the second electrode 600 may have a closed loop shape.

The second magnet 700 is disposed on the second sputtering target 500. The second magnet 700 may be fixed, and the N pole of the second magnet 700 may face the second sputtering target 500.

Alternatively, the second magnet 700 may rotate.

DC voltages having a positive polarity are applied to the first sputtering target 200 and the second sputtering target 500, and negative (−) to the first electrode 300 and the second electrode 600. DC voltage of polarity is applied.

In addition, argon gas is introduced between the first sputtering target 200 and the second sputtering target 500.

In this case, the first sputtering is performed by a potential difference between the first sputtering target 200 and the second electrode 600 and by a potential difference between the second sputtering target 500 and the first electrode 300. Plasma is formed between the target 200 and the second sputtering target 500.

Alternatively, a first RF power may be applied to the first sputtering target 200 and the second sputtering target 500. In this case, a second RF power different from the first RF power or the reference voltage may be applied to the first electrode 300 and the second electrode 600. The plasma may be formed by the first RF power and / or the second RF power, and the sputtering process may be performed.

By the plasma, the sputtered atoms of the first sputtering target 200 and the sputtered atoms of the second sputtering target 500 are deposited on the substrate 10.

The substrate 10 is disposed on the side of the first sputtering target 200 and the second sputtering target 500. That is, the substrate 10 is not disposed in an area where the first sputtering target 200 and the second sputtering target 500 face each other.

Therefore, the sputtering apparatus according to the embodiment can prevent the impurity particles that are separated from the second sputtering target 500 or the first sputtering target 200 to be deposited on the substrate 10.

In addition, since the plasma is formed in a region where the first sputtering target 200 and the second sputtering target 500 face each other, the plasma has little influence on the substrate 10.

Thus, the sputtering apparatus according to the embodiment causes less damage to the substrate 10 by plasma.

In addition, the sputtering apparatus according to the embodiment proceeds the sputtering process using the first sputtering target 200 and the second sputtering target 500 facing each other, it is possible to improve the plasma density, and to proceed an efficient sputtering process have.

Although described above with reference to the embodiment is only an example and is not intended to limit the invention, those of ordinary skill in the art to which the present invention does not exemplify the above within the scope not departing from the essential characteristics of this embodiment It will be appreciated that many variations and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

1 illustrates a sputtering apparatus according to an embodiment.

2 is a perspective view illustrating a first sputtering target, a second sputtering target, a first electrode, and a second electrode.

Claims

A first target;

A second target disposed on the first target and facing the first target;

A first magnet disposed below the first target;

A first electrode disposed around the first target;

A second magnet disposed on the second target; And

A sputtering device comprising a second electrode disposed around the second target.

The sputtering apparatus of claim 1, wherein the first target and the second target are made of the same material or different materials.

The N pole of the first magnet faces the first target.

The sputtering apparatus of the second magnet is directed toward the second target.

The method of claim 1, wherein a first voltage having the same polarity is applied to the first electrode and the second electrode,

And a second voltage having a different polarity than the first voltage is applied to the first target and the second target.

The sputtering apparatus of claim 1, wherein a plasma is formed between the first target and the second target.