CN108728791A - A kind of admission gear and its air inlet method and semiconductor processing equipment - Google Patents
A kind of admission gear and its air inlet method and semiconductor processing equipment Download PDFInfo
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- CN108728791A CN108728791A CN201710277996.4A CN201710277996A CN108728791A CN 108728791 A CN108728791 A CN 108728791A CN 201710277996 A CN201710277996 A CN 201710277996A CN 108728791 A CN108728791 A CN 108728791A
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- shielding construction
- adjustment structure
- admission gear
- base station
- inlet channel
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0063—Reactive sputtering characterised by means for introducing or removing gases
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
A kind of admission gear of present invention offer and its air inlet method and semiconductor processing equipment.The admission gear is circumferentially positioned at around the indoor base station of chamber, around base station radially pressure ring, upper shielding construction and lower shielding construction are surrounded with successively from inside to outside along base station, base station, pressure ring, upper shielding construction and lower shielding construction surround process area in chamber, admission gear includes adjustment structure, adjustment structure is between upper shielding construction and lower shielding construction, and it can be moved up and down along the axial direction of base station, to form the inlet channel in different paths in process area respectively, meet different technological requirements respectively.The admission gear can be adjusted by the inlet channel in different paths enters the flow difference of the reaction gas of process area through it, so as to make the membrane layer portion that different process phase deposition is formed that can meet the film-forming process requirement of respective stage.
Description
Technical field
The present invention relates to plasma treatment technique fields, and in particular, to a kind of admission gear and its air inlet method and
Semiconductor processing equipment.
Background technology
Physical vapour deposition (PVD) (PVD) technology or sputtering (Sputtering) deposition technique are most widely made in semi-conductor industry
A kind of film fabrication techniques refer to the thin film preparation process that film is prepared using physical method.Physical gas phase deposition technology
Can be applied to many technology fields, as in copper interconnecting line technology, encapsulation field silicon perforation (Through Silicon Via,
TSV) technology etc..
As semiconductor technology continues to develop, the size of integrated circuit is smaller and smaller, and Low-k materials (i.e. insulating materials) go out
In present interconnection technology.Low-k materials, mesh are protected in order to obtain more preferably etch topography and play the role of to a certain extent
It is preceding that usually TiAlN thin film is deposited on Low-k materials, (metal is formed on insulation material layer as etching Low-k materials
The figure of line and via) metal hard mask, this has become indispensable one in 32nm nodes copper wiring technique below
A technological process.
Deposition process of the TiAlN thin film on Low-k materials be：Make nitrogen ionization into deposition chamber at Nitrogen ion,
Nitrogen ion reacts to form TiN in target material surface with Ti, into the argon ion after the argon gas ionization of deposition chamber by target negative electricity
Pressure attracts bombardment target, knocks out the TiN of target material surface, and form TiAlN thin film in deposition on substrate.For TiAlN thin film,
Need to consider there are two important properties, one be film deposition thickness uniformity, thickness evenness and the line width after etching
Uniformity has prodigious relationship, and 32nm or less techniques require thickness evenness to be less than 2% at present；The other is film is answered
Power, TiAlN thin film generally have larger compression, and stress height can cause the lines distortion after etching, so must be examined in technique
Considering reduces stress to 500MPa is less than, to ensure that lines will not deform after etching.And the stress of TiAlN thin film relies primarily on film
Ensure close to the floor portions of the 25%-33% for accounting for entire film thickness of substrate, thickness evenness then relies primarily on the remote of film
The top layer portion thicker from the thickness of substrate ensures.
Currently, deposition chamber process gas is passed through air intake structure or upper air under generally use when TiAlN thin film deposits
Structure.As depicted in figs. 1 and 2 for typically using the structure of the deposition chambers of lower air intake structure.Process gas mainly from into
Gas port 7 is come in, and is entered in process area 2 by the labyrinth formed between pressure ring 3 and screening cover 9.The deposit cavity of lower air intake structure
Room follows the retardant curve in Fig. 3 in deposition process, i.e., the operation pressure in process area 2 under into depressed
The variation tendency of the flow for the reaction gas (such as nitrogen) that structure enters in process area 2 follows the retardant curve in Fig. 3.Its
In, abscissa is the flow of nitrogen in the retardant curve of Fig. 3, and ordinate is the operation pressure in process area 2.On retardant curve
The pervious part of A points is metal mode (metallic mode) stage in technical process, which makees with reaction gas
With insufficient, metal component content is higher in film forming；The stage is mainly used for the floor portions that deposition forms TiAlN thin film；B points with
Part afterwards is poison mode (poison mode) stage in technical process, which fully acts on reaction gas,
Metal is distributed by a certain percentage with reaction gas element in film forming, which is mainly used for the top layer portion that deposition forms TiAlN thin film
Point.
It is illustrated in figure 4 the structure of the typical deposition chambers using upper air structure.Process gas is mainly from adaptation
Part 10 introduces, and enters work by the labyrinth formed between the first barricade 12 and secondary shielding plate 13 after 11 uniform flow of uniform flow chamber
In skill region 2.The deposition chambers of upper air structure follow the retardant curve in Fig. 5, i.e. process area 2 in deposition process
Interior operation pressure with the flow of the reaction gas (such as nitrogen) entered by upper air structure in process area 2 variation
Trend follows the retardant curve in Fig. 5.Wherein, in the retardant curve of Fig. 5 abscissa be nitrogen flow, ordinate is process island
Operation pressure in domain 2.It is the metal mode (metallic mode) in technical process that A ', which puts pervious part, on retardant curve
In the stage, the stage target and reaction gas effect are insufficient, and metal component content is higher in film forming；The stage is mainly used for depositing
Form the floor portions of TiAlN thin film；It is poison mode (poison mode) stage in technical process that B ', which puts later part,
The stage target is fully acted on reaction gas, and metal is distributed by a certain percentage with reaction gas element in film forming, stage master
It is used to deposit the top layer portion for forming TiAlN thin film.
From the comparison of retardant curve in Fig. 3 and Fig. 5 as it can be seen that when deposition forms the floor portions of TiAlN thin film, in technique
In the case that the operation pressure of acquisition is certain in region 2, required nitrogen flow in the depositing operation using upper air structure
It is worth relatively low；And film forming is the results show that the depositing operation using upper air structure can be answered under lower nitrogen flow
Power is than the floor portions using the low TiAlN thin film of lower air intake structure.When deposition forms the top layer portion of TiAlN thin film, in technique
In the case that the operation pressure of acquisition is certain in region 2, required nitrogen flow in the depositing operation using lower air intake structure
It is worth relatively low；And film forming under lower nitrogen flow using the depositing operation of lower air intake structure the results show that can obtain film layer thickness
Uniformity is spent than the top layer portion using the good TiAlN thin film of upper air structure.Therefore, it in actual deposition technical process, uses
The stress that the depositing operation of upper air structure deposits the floor portions for the TiAlN thin film to be formed more meets stress to TiAlN thin film
It is required that the thickness evenness for being deposited the top layer portion for the TiAlN thin film to be formed using the depositing operation of lower air intake structure is more met
Thickness evenness requirement to TiAlN thin film.
But during actual process, by hardware limitation, TiAlN thin film depositing operation can only use single lower air intake structure or
Upper air structure deposits entire film layer, this results in the TiAlN thin film formed in the depositing operation using lower air intake structure can not be very
Meet the requirement to its stress well, the TiAlN thin film formed in the depositing operation using upper air structure can not meet well
Requirement to its thickness evenness.
How to make the TiAlN thin film that deposition is formed in technical process while meeting the requirement of stress and thickness evenness to have become
For current urgent problem to be solved.
Invention content
The present invention is directed to the above-mentioned technical problems in the prior art, provide a kind of admission gear and its air inlet method and
Semiconductor processing equipment.The admission gear can be moved by position in the technical process of film deposition and be tied in pressure ring, upper shielding
The inlet channel in different paths is formed between structure and lower shielding construction, the inlet channel in different paths can be adjusted enters work through it
The flow of the reaction gas in skill region is not gone the same way so as to the different process stage in entire technical process by being formed
The inlet channel of diameter realizes the adjusting for the reaction gas flow for entering process area to the different process stage, and then makes different process
The membrane layer portion that phase deposition is formed can meet the film-forming process requirement of respective stage, after finally making entire technical process
The film layer of formation integrally meets technological requirement, promotes film layer quality of forming film.
The present invention provides a kind of admission gear, is circumferentially positioned at around the indoor base station of chamber, along described around the base station
Base station is radially surrounded with pressure ring, upper shielding construction and lower shielding construction successively from inside to outside, the base station, the pressure ring,
The upper shielding construction and the lower shielding construction surround process area in the chamber, and the admission gear includes surrounding to set
The air supply channel in the lower shielding construction periphery is set, it is described into mechanism of qi for providing reaction gas into the process area
Structure further includes adjustment structure, and the adjustment structure, and can be along institute between the upper shielding construction and the lower shielding construction
The axial direction for stating base station moves up and down, and to form the inlet channel in different paths in the process area respectively, meets respectively not
Same technological requirement.
Preferably, the adjustment structure is arranged around base station edge periphery, and the adjustment structure is along the base station
The radial second end that outside is extended to from the first end of inside；
The pressure ring offers slot backwards to the side of the process area, and the first end face of the adjustment structure is to described
The opening of slot, and be embedded in the slot；
The end of the upper shielding construction is opposite with the second end of the adjustment structure and is located at the top of the second end,
The lower shielding construction extends to the lower section of the second end.
Preferably, the cross-sectional shapes perpendicular to the base station loading end of the adjustment structure are L-shaped.
Preferably, when the adjustment structure rises to a high position and is in contact with the upper shielding construction, the air source is logical
The reaction gas that road provides is logical by the air inlet formed between the upper shielding construction and the lower shielding construction successively
Road, the lower inlet channel formed between the adjustment structure and the lower shielding construction, and in the regulating mechanism and institute
The labyrinth type inlet channel formed between pressure ring is stated to enter in the process area.
Preferably, when the adjustment structure drops to low level and is in contact with the lower shielding construction, the air source is logical
The reaction gas that road provides is logical by the air inlet formed between the upper shielding construction and the lower shielding construction successively
Road, the upper air channel formed between the adjustment structure and the upper shielding construction enter in the process area.
Preferably, when the adjustment structure rises to a high position and is in contact with the upper shielding construction, the adjustment structure
The first end and the slot between form the labyrinth type inlet channel.
Preferably, when the adjustment structure drops to low level and is in contact with the lower shielding construction, the adjustment structure
The second end and the end of the upper shielding construction between form the upper air channel.
Preferably, further include actuating unit, the actuating unit connects the adjustment structure, for driving the adjusting to tie
Structure moves up and down.
The present invention also provides a kind of air inlet method of above-mentioned admission gear, the air inlet method is used for deposited metal nitride
Film, the metal nitride films include underlying membrane and top layer film；The reaction gas includes nitrogen.
Preferably, when deposition forms the underlying membrane, the adjustment structure drops to low level and is tied with the lower shielding
Structure is in contact, and the reaction gas that the air supply channel provides in the upper shielding construction and the lower shielding successively by tying
The inlet channel formed between structure, the upper air channel formed between the adjustment structure and the upper shielding construction enter institute
It states in process area.
Preferably, when deposition forms the top layer film, the adjustment structure rises to a high position and is tied with the upper shielding
Structure is in contact, and the reaction gas that the air supply channel provides in the upper shielding construction and the lower shielding successively by tying
The inlet channel formed between structure, the lower inlet channel formed between the adjustment structure and the lower shielding construction, and
The labyrinth type inlet channel formed between the regulating mechanism and the pressure ring enters in the process area.
The present invention also provides a kind of semiconductor processing equipments, including above-mentioned admission gear.
Beneficial effects of the present invention：Admission gear provided by the present invention can be in film deposition by the way that adjustment structure is arranged
Technical process in moved by position formed between pressure ring, upper shielding construction and lower shielding construction different paths air inlet it is logical
Road, the inlet channel in different paths can adjust the flow for entering the reaction gas in process area through it, so as to whole
The different process stage in a technical process, (air inlet for opening different paths was logical by forming the inlet channel in different paths
Road) realize the adjusting for the reaction gas flow for entering process area to the different process stage, and then make different process phase deposition
The membrane layer portion of formation can meet the film-forming process requirement of respective stage, finally make the film formed after entire technical process
Layer is whole to meet technological requirement, promotes film layer quality of forming film.
Semiconductor processing equipment provided by the present invention can be such that the semiconductor processes set by using above-mentioned admission gear
The standby film layer formed in different process phase deposition can meet the film-forming process requirement of respective stage, finally make entire technique mistake
The film layer formed after journey integrally meets technological requirement, to improve film layer quality of forming film.
Description of the drawings
Fig. 1 is the structural schematic diagram for the deposition chambers for using lower air intake structure in the prior art；
Fig. 2 is the structure sectional view of lower air intake structure in Fig. 1；
Fig. 3 is the retardant curve in TiAlN thin film deposition process using the deposition chambers of lower air intake structure；
Fig. 4 is the structure sectional view of upper air structure in the deposition chamber；
Fig. 5 is the retardant curve in TiAlN thin film deposition process using the deposition chambers of upper air structure；
Fig. 6 is structure sectional view of the admission gear when forming upper air channel in the embodiment of the present invention 1；
Fig. 7 is admission gear in the embodiment of the present invention 1 inlet channel and knot when labyrinth type inlet channel under formation
Structure sectional view；
The structure top view of adjustment structure in the admission gear that Fig. 8 is Fig. 6 and Fig. 7；
Fig. 9 is structure sectional view of the adjustment structure in Fig. 8 along AA cutting lines；
Figure 10 is the deposition chambers using the admission gear in embodiment 1 in metal nitride films deposition process
Retardant curve.
Reference sign therein：
1. base station；2. process area；3. pressure ring；31. slot；4. air supply channel；411. times shielding constructions；Knot is shielded on 412.
Structure；5. adjustment structure；51. upper air channel；52. lower inlet channel；6. the cavity space other than process area；53. first end；
54. second end；55. labyrinth type inlet channel；7. air inlet；9. screening cover；10. adapter；11. uniform flow chamber；12. the first shielding
Plate；13. secondary shielding plate.
Specific implementation mode
To make those skilled in the art more fully understand technical scheme of the present invention, below in conjunction with the accompanying drawings and it is embodied
Mode is described in further detail a kind of admission gear provided by the present invention and its air inlet method and semiconductor processing equipment.
Embodiment 1：
The present embodiment provides a kind of admission gears, as shown in Figure 6 and Figure 7, are circumferentially positioned at around the indoor base station of chamber 1,
1 surrounding of base station is surrounded with pressure ring 3, upper shielding construction 412 and lower shielding construction 411 successively from inside to outside along 1 radial direction of base station,
Base station 1, pressure ring 3, upper shielding construction 412 and lower shielding construction 411 surround process area 2 in chamber, and admission gear includes ring
Around the air supply channel 4 being arranged in 411 periphery of lower shielding construction, for providing reaction gas into process area 2, admission gear is also
Including adjustment structure 5, adjustment structure 5, and can be along the axial direction of base station 1 between upper shielding construction 412 and lower shielding construction 411
It moves up and down, to form the inlet channel in different paths in process area 2 respectively, meets different technological requirements respectively.
The admission gear can pressed in the technical process of film deposition by position movement by the way that adjustment structure 5 is arranged
The inlet channel in different paths, the inlet channel in different paths are formed between ring 3, upper shielding construction 412 and lower shielding construction 411
The flow for entering the reaction gas in process area 2 through it can be adjusted, so as to the different works in entire technical process
The skill stage is realized by forming the inlet channel (inlet channel for opening different paths) in different paths to the different process stage
Into the control of the reaction gas flow of process area 2, and then the membrane layer portion for making different process phase deposition be formed can be full
The film-forming process requirement of sufficient respective stage, finally makes the film layer formed after entire technical process integrally meet technological requirement,
Promote film layer quality of forming film.
In the present embodiment, as Figure 6-9, adjustment structure 5 is arranged around 1 edge periphery of base station, and adjustment structure 5 is along base station
The 1 radial second end 54 that outside is extended to from the first end 53 of inside；Pressure ring 3 is offered backwards to the side of process area 2
Slot 31, the first end 53 of adjustment structure 5 are embedded in towards the opening of slot 31 in slot 31.The end of upper shielding construction 412 and tune
The second end 54 of section structure 5 is opposite and is located at the top of second end 54, and lower shielding construction 411 extends to the lower section of second end 54.
In the present embodiment, the cross-sectional shapes perpendicular to 1 loading end of base station of adjustment structure 5 are L-shaped.Cross-sectional shapes are L-shaped
Adjustment structure 5 protrusion one end be first end 53.
It should be noted that the shape of adjustment structure 5 is not limited to the L-shaped this planform in section, it is other
It can realize that the shape of 5 function of adjustment structure can be selected.
In the present embodiment, when adjustment structure 5 rises to a high position and is in contact with upper shielding construction 412, air supply channel 4 carries
The reaction gas of confession by the inlet channel formed between upper shielding construction 412 and lower shielding construction 411, is tied successively adjusting
The lower inlet channel 52 formed between structure 5 and lower shielding construction 411, and the labyrinth that is formed between regulating mechanism 5 and pressure ring 3
Formula inlet channel 55 enters in process area 2.
Wherein, when adjustment structure 5 rises to a high position and is in contact with upper shielding construction 412, the first end 53 of adjustment structure 5
Labyrinth type inlet channel 55 is formed between slot 31.As shown in fig. 7, adjustment structure 5 can be moved to close to the direction of process area 2
It is dynamic, to form lower inlet channel 52 and labyrinth type inlet channel 55；Because of reaction gas inlet channel 52 and labyrinth under process
When formula inlet channel 55, understands some and enter in the cavity space 6 other than process area 2, and set by being connected to cavity space 6
Air extractor (such as cold pump, the be not shown) extraction set, hence into reaction gas flow and the gas that manually sets of process area 2
The flow value of source channels 4 is compared, and corresponding reduction is had, to meet the film-forming process requirement of corresponding operation stage.
In addition, when adjustment structure 5 drops to low level and is in contact with lower shielding construction 411, air supply channel 4 provides anti-
Answer gas successively by the inlet channel formed between upper shielding construction 412 and lower shielding construction 411, in 5 He of adjustment structure
The upper air channel 51 formed between upper shielding construction 412 enters in process area 2.
Wherein, when adjustment structure 5 drops to low level and is in contact with lower shielding construction 411, the second end 54 of adjustment structure 5
Upper air channel 51 is formed between the end of upper shielding construction 412.As shown in fig. 6, adjustment structure 5 can be to far from process area
2 direction movement, to form upper air channel 51；Because reaction gas can be directly entered process island by upper air channel 51
Domain 2, the air extractor (such as cold pump, be not shown) that setting will not be connected to the cavity space 6 other than process area 2 are extracted out, from
And the reaction gas flow for entering process area 2 will not be reduced, it should be equal with the flow value of the air supply channel 4 manually set, with
Meet the film-forming process requirement of corresponding operation stage.
The admission gear can the different process stage be respectively formed lower inlet channel 52 and labyrinth type inlet channel 55 and
Upper air channel 51 can meet different film forming requirements respectively by the inlet channel in two kinds of different paths.I.e. respectively in film forming work
The different process stage of skill process, according to its in film-forming technology process differential responses gas flow require be respectively adopted down into
Gas channel 52 and labyrinth type inlet channel 55 or upper air channel 51 are passed through the reaction gas of different flow into process area 2
Body finally realizes different film forming requirements.
In the present embodiment, admission gear further includes actuating unit (not shown), and actuating unit connects adjustment structure 5,
For driving adjustment structure 5 to move up and down.Wherein, actuating unit can be motor, and the power output end connection of motor adjusts knot
Structure 5 enables adjustment structure 5 to be moved up and down under the drive of motor.
In the present embodiment, 5 surface of adjustment structure is handled by meltallizing.Through meltallizing, treated that 5 surface of adjustment structure will not
Particle is generated, to prevent adjustment structure 5 from being polluted to the process environments in process area 2 in moving process.
Above structure based on admission gear, the present embodiment also provide a kind of air inlet method of the admission gear, the air inlet
Method is used for deposited metal nitride film, and metal nitride films include underlying membrane and top layer film；Reaction gas includes nitrogen.
In the present embodiment, when deposition forms underlying membrane, adjustment structure 5 drop to low level and with lower 411 phase of shielding construction
Contact, the reaction gas that air supply channel 4 provides is successively by forming between upper shielding construction 412 and lower shielding construction 411
Inlet channel, the upper air channel 51 formed between adjustment structure 5 and upper shielding construction 412 enter in process area 2.
When deposition forms top layer film, adjustment structure 5 rises to a high position and is in contact with upper shielding construction 412, and air source is logical
The reaction gas that road 4 provides passes through the inlet channel formed between upper shielding construction 412 and lower shielding construction 411 successively,
The lower inlet channel 52 formed between adjustment structure 5 and lower shielding construction 411, and formed between regulating mechanism 5 and pressure ring 3
Labyrinth type inlet channel 55 enter process area 2 in.
In the present embodiment, upper air channel 51 when depositing underlying membrane for forming, and the nitrogen that will enter process area 2
Flow control is within the scope of 0-20sccm；Lower inlet channel 52 will enter process area 2 for being formed in deposited top layer film
Nitrogen flow control within the scope of 100-200sccm.
Due to required in the film-forming process of metal nitride films, in technique the Stress Control of underlying membrane -400~
Within the scope of 400MPa, the thickness evenness of top layer film requires control in < 2%.As shown in Figure 10 for using in the present embodiment into
(operation pressure changes the retardant curve of mechanism of qi structure with the variation of reaction gas (such as nitrogen) flow i.e. in process area 2
Curve graph), when forming underlying membrane, in order to realize the control to its stress, need to control film forming procedure in metal mode
In (metallic mode) stage (i.e. retardant curve A " puts pervious part in Figure 10), which acts on reaction gas
Insufficient, metal component content is higher in film forming.
Use upper air channel 51, reaction gas that can be directly entered technique by the metal mode stage in film-forming process
Region 2, the air extractor (such as cold pump, be not shown) that setting will not be connected to the cavity space 6 other than process area 2 are extracted out,
It will not be reduced hence into the reaction gas flow of process area 2, should be equal with the flow value of the air supply channel 4 manually set,
So nitrogen flow can be manually set to smaller value, such as 0-20sccm at this time, to make the technique in process area 2
Pressure energy control within the scope of 0-2mT, and then can prepare to be formed satisfaction compared with low stress requirement, (i.e. stress is in -400~400MPa
In range) underlying membrane.Because reaction gas flow is smaller at this time, from without single upper air structure in the prior art
It is caused to increase the problem of technical process enters poison mode with reaction gas flow.
When forming top layer film, in order to realize the control to its thickness evenness, need film forming procedure control in poisoning mould
In formula (poison mode) stage (i.e. retardant curve B " puts later part in Figure 10), the stage target and reaction gas are abundant
It acts on, metal is distributed by a certain percentage with reaction gas element in film forming.
By inlet channel 52 and labyrinth type inlet channel 55 under being used in the poison mode stage of film-forming process, one is had
Partial reaction gas enters in the cavity space 6 other than process area 2, and the air extractor of setting is connected to cavity space 6
(such as cold pump, be not shown) is extracted out, hence into the stream of the reaction gas flow and the air supply channel 4 manually set of process area 2
Magnitude is compared, and corresponding reduction is had, so nitrogen flow can be manually set to larger value, such as 100- at this time
200sccm to enable the operation pressure in process area 2 to control within the scope of 5-10mT, and then can be prepared and be formed satisfaction
Thickness evenness requires the top layer film of (i.e. thickness evenness < 2%).Because reaction gas flow is larger at this time, to go out
Now reduce the problem of technical process enters metal mode with reaction gas flow caused by single lower air intake structure in the prior art.
The case where entire film layer is deposited using single upper air structure or lower air intake structure in compared with the prior art, this
In embodiment by make admission gear metal mode stage and poison mode stage be respectively formed upper air channel 51 and under into
Gas channel 52 and labyrinth type inlet channel 55, can adjust and enter the nitrogen flow of process area 2 in the different process stage, to
The operation pressure in different process stage process region 2 is controlled, and then realize underlying membrane and top layer film can respectively meet respectively
From film-forming process requirement, finally improve the quality of entire depositional coating.
The air inlet method is by making admission gear be respectively formed upper air channel when deposition forms underlying membrane and top layer film
51 or lower inlet channel 52 and labyrinth type inlet channel 55, it can adjust respectively and enter work when forming underlying membrane and top layer film
The nitrogen flow in skill region, to control the operation pressure when forming underlying membrane and top layer film in process area respectively, in turn
It realizes underlying membrane and top layer film and meets respective film-forming process requirement respectively, finally improve the quality of entire depositional coating.
The advantageous effect of embodiment 1：Admission gear provided in embodiment 1 can be in film layer by the way that adjustment structure is arranged
In the technical process of deposition by position movement formed between pressure ring, upper shielding construction and lower shielding construction different paths into
Gas channel, the inlet channel in different paths can adjust the flow for entering the reaction gas in process area through it, so as to
The different process stage in entire technical process (opens the air inlet in different paths by forming the inlet channel in different paths
Channel) realize the adjusting for the reaction gas flow for entering process area to the different process stage, and then keep the different process stage heavy
The membrane layer portion that product is formed can meet the film-forming process requirement of respective stage, finally make to be formed after entire technical process
Film layer integrally meets technological requirement, promotes film layer quality of forming film.
Embodiment 2：
The present embodiment provides the admission gears in a kind of semiconductor processing equipment, including embodiment 1.
By using the admission gear in embodiment 1, the semiconductor processing equipment can be made in different process phase deposition shape
At film layer can meet the film-forming process requirement of respective stage, finally make the film layer formed after entire technical process whole
Meet technological requirement, to improve film layer quality of forming film.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, in the essence for not departing from the present invention
In the case of refreshing and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (12)
1. a kind of admission gear is circumferentially positioned at around the indoor base station of chamber, radial by interior along the base station around the base station
It is surrounded with pressure ring, upper shielding construction and lower shielding construction, the base station, the pressure ring, the upper shielding knot successively outward
Structure and the lower shielding construction surround process area in the chamber, and the admission gear includes being circumferentially positioned at the lower screen
The air supply channel of shield structure periphery, for providing reaction gas into the process area, which is characterized in that the admission gear
Further include adjustment structure, the adjustment structure, and can be along described between the upper shielding construction and the lower shielding construction
The axial direction of base station moves up and down, and to form the inlet channel in different paths in the process area respectively, meets respectively different
Technological requirement.
2. admission gear according to claim 1, which is characterized in that the adjustment structure is around base station edge periphery
Setting, the radial second end that from the first end of inside extends to outside of the adjustment structure along the base station；
The pressure ring offers slot backwards to the side of the process area, and the first end face of the adjustment structure is to the slot
Opening, and be embedded in the slot；
The end of the upper shielding construction is opposite with the second end of the adjustment structure and is located at the top of the second end, described
Lower shielding construction extends to the lower section of the second end.
3. admission gear according to claim 2, which is characterized in that the adjustment structure is carried perpendicular to the base station
The cross-sectional shapes in face are L-shaped.
4. according to the admission gear described in claim 2-3, which is characterized in that when the adjustment structure rise to a high position and with institute
When stating shielding construction and being in contact, the reaction gas that the air supply channel provides pass through successively the upper shielding construction with
The inlet channel formed between the lower shielding construction, under being formed between the adjustment structure and the lower shielding construction into
Gas channel, and the labyrinth type inlet channel formed between the regulating mechanism and the pressure ring enter the process area
It is interior.
5. according to the admission gear described in claim 2-3, which is characterized in that when the adjustment structure drop to low level and with institute
When stating lower shielding construction and being in contact, the reaction gas that the air supply channel provides pass through successively the upper shielding construction with
The inlet channel formed between the lower shielding construction is formed enterprising between the adjustment structure and the upper shielding construction
Gas channel enters in the process area.
6. admission gear according to claim 4, which is characterized in that the adjustment structure rise to a high position and with it is described on
When shielding construction is in contact, the labyrinth type inlet channel is formed between the first end and the slot of the adjustment structure.
7. admission gear according to claim 5, which is characterized in that the adjustment structure drop to low level and with it is described under
When shielding construction is in contact, formed on described between the second end of the adjustment structure and the end of the upper shielding construction
Inlet channel.
8. admission gear according to claim 1, which is characterized in that further include actuating unit, the actuating unit connection
The adjustment structure, for driving the adjustment structure to move up and down.
9. a kind of air inlet method of admission gear as described in claim 1-8 any one, which is characterized in that the air inlet side
Method is used for deposited metal nitride film, and the metal nitride films include underlying membrane and top layer film；The reaction gas includes nitrogen
Gas.
10. air inlet method according to claim 9, which is characterized in that when deposition forms the underlying membrane, the adjusting
Structure drops to low level and is in contact with the lower shielding construction, and the reaction gas that the air supply channel provides passes through successively
The inlet channel formed between the upper shielding construction and the lower shielding construction, in the adjustment structure and the upper shielding
The upper air channel formed between structure enters in the process area.
11. air inlet method according to claim 9, which is characterized in that when deposition forms the top layer film, the adjusting
Structure rises to a high position and is in contact with the upper shielding construction, and the reaction gas that the air supply channel provides passes through successively
The inlet channel formed between the upper shielding construction and the lower shielding construction, in the adjustment structure and the lower shielding
The lower inlet channel formed between structure, and the labyrinth type inlet channel that is formed between the regulating mechanism and the pressure ring
Into in the process area.
12. a kind of semiconductor processing equipment, which is characterized in that including the admission gear described in claim 1-8 any one.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710277996.4A CN108728791B (en) | 2017-04-25 | 2017-04-25 | Air inlet mechanism and air inlet method thereof and semiconductor processing equipment |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710277996.4A CN108728791B (en) | 2017-04-25 | 2017-04-25 | Air inlet mechanism and air inlet method thereof and semiconductor processing equipment |
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| CN108728791A true CN108728791A (en) | 2018-11-02 |
| CN108728791B CN108728791B (en) | 2020-03-27 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112086336A (en) * | 2019-06-12 | 2020-12-15 | 北京北方华创微电子装备有限公司 | Semiconductor process assembly and semiconductor processing equipment |
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| CN101567304A (en) * | 2008-04-23 | 2009-10-28 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas distributing device and semiconductor processing device applying same |
| US20140203702A1 (en) * | 2013-01-24 | 2014-07-24 | Tokyo Electron Limited | Plasma processing apparatus |
| CN104752275A (en) * | 2013-12-29 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Processing chamber and semiconductor processing equipment |
| CN205741199U (en) * | 2016-06-20 | 2016-11-30 | 辽宁科技大学 | A kind of plasma enhancing magnetron sputtering apparatus preventing target poison ing |
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|---|---|---|---|---|
| CN101567304A (en) * | 2008-04-23 | 2009-10-28 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas distributing device and semiconductor processing device applying same |
| US20140203702A1 (en) * | 2013-01-24 | 2014-07-24 | Tokyo Electron Limited | Plasma processing apparatus |
| CN104752275A (en) * | 2013-12-29 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Processing chamber and semiconductor processing equipment |
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