CN112086336A - Semiconductor process assembly and semiconductor processing equipment - Google Patents

Abstract

The invention provides a semiconductor process assembly and semiconductor processing equipment, wherein the semiconductor process assembly comprises a pressing ring, wherein the pressing ring is used for pressing an edge area of the upper surface of a wafer when a base is positioned at a process position; further comprising: the air inlet structure is arranged below the pressure ring along the circumferential direction of the pressure ring, and when the base is located at the process position, a diffusion channel communicated with the space above the base is arranged between the air inlet structure and the pressure ring; a plurality of air inlet channels are arranged in the air inlet structure, and air outlet ends of the air inlet channels are communicated with the diffusion channels and are uniformly distributed along the circumferential direction of the pressure ring; and the gas supply device is used for conveying process gas to each gas inlet channel, and the process gas flows out of the gas inlet channels and then enters the upper space of the base through the diffusion channel. The invention solves the problem of uneven plasma energy caused by different lengths of gas paths reaching the surface of the substrate.

Description

Semiconductor process components and semiconductor processing equipment

technical field

The present invention relates to the field of semiconductor manufacturing, in particular, to a semiconductor process component and semiconductor processing equipment.

Background technique

At present, in the manufacturing process of integrated circuits, PVD (Physical Vapor Deposition, physical vapor deposition) plays an irreplaceable role, and almost all semiconductor devices use PVD for their subsequent metal interconnections in the manufacturing process. Metal interconnection In the chip, it plays the role of providing electronic signals, micro-connections, etc. for each device. The PVD process is generally carried out in a high vacuum chamber, and there is a base in the chamber to support the wafer on it; the wafer is splashed The material to be shot, that is, the target, is fixed on the top of the chamber, and the magnetron is installed on the back of the target to generate a magnetic field to enhance the ability to bind electrons. The process gas will be introduced into the side wall of the chamber, and a negative voltage will be applied to the target, so that the process gas Ionization creates a plasma, and the plasma strikes the target to create atoms or ions of the target material, and these atoms or ions are deposited on the wafer to form a thin film.

The schematic diagram of the chamber structure of PVD in the prior art is shown in FIG. 1 , the shutter 1' is overlapped on the inner liner 2', the inner liner 2' is overlapped on the adapter 3', and the adapter 3' is installed In the chamber; the base 4' is used to carry the substrate 5', and the shutter 1' is raised to the corresponding process position with the movement of the base 4', so that the shutter 1' is separated from the lining 2', and the process The gas enters the chamber below the base 4' from the gas inlet pipe 6' on the side wall of the chamber, and further, enters the cavity between the target 7' and the base 4' from the gap between the shield 1' and the flange of the inner liner 2' In the chamber, when a negative voltage is applied to the target 7', the process gas generates plasma, and under the force of the negative voltage of the target 7', the plasma hits the target 7' to generate atoms or ions, which are finally deposited on the target 7'. A thin film is formed on the substrate 5'.

Obviously, because the process gas enters the chamber through the gas inlet pipeline on the side wall of the chamber, the length of the gas path reaching the surface of the substrate 5' is inconsistent, which can easily lead to uneven plasma energy generated by the excitation, and the deposition of thin films is easy. Problems such as eccentricity occur.

SUMMARY OF THE INVENTION

The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a semiconductor process assembly and semiconductor processing equipment to solve the problem of uneven plasma energy due to the different lengths of gas paths reaching the surface of the substrate. question.

In order to achieve the purpose of the present invention, a semiconductor process assembly is provided, which includes a pressing ring for pressing the edge region of the upper surface of the wafer when the susceptor is at the processing position; further comprising:

The air intake structure is arranged below the pressure ring along the circumferential direction of the pressure ring, and when the base is located at the process position, there is a connection between the air intake structure and the pressure ring. a diffusion channel connected to the space above the base; and a plurality of air intake channels are arranged in the air intake structure, and the air outlet ends of the plurality of air intake channels are all communicated with the diffusion channel, and are arranged along the pressure ring. Circumferential uniform distribution;

The gas supply device is used for delivering process gas to each of the intake channels, and after the process gas flows out of the intake channels, the process gas enters the space above the base through the diffusion channel.

Preferably, it also includes an inner liner, the inner liner has a flanging structure bent inward from its lower end and extending upward, and the flanging structure is used to support the pressing ring when the base is lowered;

The air intake structure is formed in the flanging structure, and when the base is located at the process position, the diffusion channel is formed between the flanging structure and the pressing ring; and, in the flipping The air intake passage is provided in the side structure.

Preferably, it also includes an inner liner, the inner liner has a flanging structure bent inward from its lower end and extending upward, and the flanging structure is used to support the pressing ring when the base is lowered;

The air intake structure is arranged on the side wall of the flanging structure, and is fixedly connected with the side wall of the flanging structure.

Preferably, it also includes an inner liner, the inner liner has a flanging structure bent inward from its lower end and extending upward, and the flanging structure is used to support the pressing ring when the base is lowered;

The air intake structure is fixedly connected to the lower surface of the pressure ring; or, the air intake structure is fixedly connected to the side wall of the base;

The air intake structure, the flanging structure and the press ring cooperate to form the diffusion channel.

Preferably, the air supply device includes an air intake pipeline, wherein,

The gas outlet end of the gas inlet pipeline is connected with the gas inlet end of each of the gas inlet channels; the gas inlet end of the gas inlet pipeline extends to the outside of the reaction chamber and is connected with the gas source of the process gas.

Preferably, the air inlet pipeline penetrates the side wall of the reaction chamber below the base and extends to the outside of the reaction chamber.

Preferably, the air supply device includes an air intake pipeline, wherein,

The gas outlet end of the gas inlet pipeline is connected with the gas inlet end of each of the gas inlet passages; the gas inlet end of the gas inlet pipeline extends to the outside of the reaction chamber and is connected with the gas source of the process gas; and , the intake pipeline is a soft pipeline, so as to maintain connection with the intake passage when the intake structure rises and falls.

Preferably, the semiconductor process assembly further includes a uniform flow structure, the uniform flow structure is fixedly connected to the air intake structure, and a uniform flow space is provided in the uniform flow structure along the circumferential direction of the pressure ring, The uniform flow space is communicated with each of the intake passages; the gas supply device delivers the process gas to each of the intake passages through the uniform flow space of the uniform flow structure.

Preferably, the air intake structure includes: a first body and a second body, the second body is sleeved on the periphery of the first body, the first body and the second body are both connected to the uniform The flow structure is connected, and the annular space between the first body and the second body forms the intake passage.

Preferably, each of the air intake passages is a through hole passing through the air intake structure along the axial direction of the pressure ring.

A semiconductor processing equipment includes a reaction chamber, wherein a semiconductor process assembly and a base for carrying a substrate are arranged in the reaction chamber, and the semiconductor process assembly adopts the semiconductor process assembly described in this application.

The present invention has the following beneficial effects:

The semiconductor process assembly and semiconductor processing equipment provided by the present invention include a pressure ring, an air intake structure and an air supply device. The pressure ring is used to press the edge region of the upper surface of the wafer when the base is in the process position; the air intake structure is along the pressure ring. The circumferential direction is arranged below the pressure ring, and when the base is in the process position, there is a diffusion channel between the air intake structure and the pressure ring that communicates with the space above the base; The gas outlet ends of the multiple inlet channels are all connected with the diffusion channel, and are evenly distributed along the circumferential direction of the pressure ring; the gas supply device is used to deliver process gas to each inlet channel, and after the process gas flows out of the inlet channel, Enter the space above the base through the diffusion channel. The invention can make the process gas enter the space above the susceptor through the air inlet structure and the diffusion channel uniformly and quickly by setting the air inlet structure, so as to ensure the uniformity of plasma energy when the wafer surface is processed. At the same time, since the process gas is generally at room temperature, the pressure ring can be indirectly cooled to keep the temperature of the pressure ring relatively stable, thereby reducing its thermal radiation to the wafer and keeping the wafer process temperature relatively stable.

Description of drawings

Fig. 1 is the schematic diagram of the chamber structure of existing PVD;

FIG. 2 is a schematic diagram of a first structure of a semiconductor process assembly provided by an embodiment of the present invention;

3 is a schematic structural diagram of an air intake structure in an embodiment of the present invention;

FIG. 4 is a schematic diagram of a second structure of a semiconductor process assembly provided by an embodiment of the present invention;

FIG. 5 is a schematic diagram of a third structure of the semiconductor process assembly provided by the embodiment of the present invention;

6 is a schematic diagram of a fourth structure of the semiconductor process assembly provided by the embodiment of the present invention;

7 is a schematic structural diagram of a semiconductor processing equipment provided by an embodiment of the present invention;

FIG. 8 is another schematic structural diagram of an air intake structure provided by an embodiment of the present invention.

Detailed ways

In order for those skilled in the art to better understand the technical solutions of the present invention, the semiconductor process components and semiconductor processing equipment provided by the present invention are described in detail below with reference to the accompanying drawings.

2 is a schematic structural diagram of a semiconductor process assembly provided by an embodiment of the present invention, including a pressure ring 1, which is used to press the edge area of the upper surface of the wafer 3 when the base 2 is in the process position; the above-mentioned The semiconductor process assembly also includes an air intake structure 4 and an air supply device (not shown in the figure). There is a diffusion channel between 4 and the pressure ring 1 that communicates with the space above the base 2; and, as shown in FIG. The gas outlet ends are all communicated with the diffusion channels, and are evenly distributed along the circumferential direction of the pressure ring 1; the gas supply device is used to deliver process gas to each inlet channel 41, and after the process gas flows out of the inlet channel 41, it enters the base through the diffusion channel 2 space above.

The semiconductor process assembly provided by the embodiment of the present invention can make the process gas enter the space above the base 2 through the gas inlet structure 4 and the diffusion channel uniformly and quickly, ensuring the uniformity of plasma energy when the wafer surface is processed. At the same time, since the process gas is generally at room temperature, the pressure ring 1 can be indirectly cooled to keep the temperature of the pressure ring 1 relatively stable, thereby reducing its thermal radiation to the wafer 3 and keeping the wafer process temperature relatively stable.

Referring to FIG. 2 , the diffusion channel is the area indicated by the arrow, and the outlet end of the intake channel 41 is communicated with the diffusion channel indicated by the arrow.

Optionally, the intake passage 41 may be a through hole penetrating the intake structure 4 along the axial direction of the pressure ring 1, and the radial cross-sectional shape of the through hole may be various shapes such as circle, triangle, square, etc., see FIG. 3, The radial cross-sectional shape of the through hole is circular. The diameter of the circular through hole can be set differently depending on the process. Generally speaking, the diameter of each through hole can be set to be about 2 mm.

In one embodiment of the present invention, as shown in FIG. 4 , the semiconductor process assembly further includes a liner 5 . The liner 5 has a flanging structure 51 that is bent inward from its lower end and extends upward. The flanging structure 51 is used for When the base is lowered, the pressure ring 1 is supported, and the air intake structure 4 is formed in the flanging structure 51. When the base 2 is in the process position, a diffusion channel is formed between the flanging structure 51 and the pressure ring 1; and the flanging structure 51 An intake passage 41 is provided in it. In this embodiment, the flanging structure 51 of the inner lining is used as the foundation for the formation of the air intake structure 4, and each air intake passage 41 is directly arranged inside the flanging structure 51, which is simple in structure and easy to implement, and achieves improved plasma energy uniformity. the goal of.

In another embodiment of the present invention, the air intake structure 4 may also be disposed on the side wall of the flanging structure 51 and be fixedly connected with the side wall of the flanging structure 51 . In this embodiment, the air intake structure 4 is provided as an independent component, and the structure is similar to the structure shown in FIG. For further processing, the structure is simple, easy to implement, and maintenance is more convenient, and the purpose of improving the uniformity of plasma energy can also be achieved.

In another embodiment of the present invention, as shown in FIG. 5 , the air intake structure 4 can also be fixedly connected to the lower surface of the pressure ring 1 ; or, as shown in FIG. Side wall fixed connection. In this embodiment, the air intake structure 4 is also provided as an independent component, and the air intake structure 4, the flanging structure 51 and the pressure ring 1 cooperate to form a diffusion channel. This embodiment provides a variety of fixing forms of the air intake structure 4. During the specific embodiment process, different setting schemes can be flexibly selected according to the positional relationship of different components, the shape change of specific components (such as pressure rings) and other factors. to set the air intake structure 4.

Based on the above-mentioned arrangement of the air intake structure 4, in an embodiment of the present invention, as shown in FIG. 7 , the air supply device may include an air intake pipeline 7, wherein the air outlet end of the air intake pipeline 7 is connected to each air intake passage. 41 is connected to the gas inlet end; the gas inlet end of the gas inlet pipeline 7 extends to the outside of the reaction chamber 6 and is connected to the gas source of the process gas.

The gas source is used to supply process gas to the inlet line. It should be noted that the flanging structure 51 of the inner liner 5 in FIG. 4 forms a diffusion channel between the air intake structure 4 and the pressure ring 1 .

Preferably, as shown in FIG. 7 , the air inlet line 7 penetrates the side wall of the reaction chamber 6 below the base 2 and extends to the outside of the reaction chamber 6 .

For the case where the air intake structure 4 is fixedly connected to the lower surface of the pressure ring 1 or the air intake structure 4 is fixedly connected to the side wall of the base 2, the air intake pipeline 7 needs to be set as a soft pipeline, and some allowance should be set in the length. In order to maintain connection with the intake passage 41 when the intake structure 4 is raised and lowered.

In another embodiment of the present invention, as shown in FIG. 7 , the semiconductor process assembly may further include a uniform flow structure 8 . The uniform flow structure 8 is fixedly connected to the air intake structure 4 , and the uniform flow structure 8 is located along the pressure ring 1 in the uniform flow structure 8 . A uniform flow space is provided around the circumference, and the uniform flow space is communicated with each inlet passage; the gas supply device delivers process gas to each inlet passage 41 through the uniform flow space of the uniform flow structure 8 .

Based on the uniform flow structure 8 , as shown in FIG. 8 , the air intake structure 4 can also be configured to include: a first body 42 and a second body 43 , the second body 43 is sleeved on the periphery of the first body 42 , and the first body 42 The second body 43 is connected to the uniform flow structure 8 , and the annular space between the first body 42 and the second body 43 forms an air intake passage 41 . The air intake structure provided by the embodiment of the present invention is a hollow air intake structure, and the air intake passage 41 is a hollow cavity passing through the air intake structure along the axial direction of the pressure ring 1 . Based on different processes, the width of the hollow cavity can be set differently. Generally speaking, the width of the hollow cavity can be set to be about 2 mm.

Aiming at the semiconductor process components provided in the above embodiments, the present invention further provides a semiconductor process equipment. As shown in FIG. 7 , the semiconductor process equipment includes: a reaction chamber 6, and the reaction chamber 6 is provided with a semiconductor process component and a For the base 2 carrying the substrate, the semiconductor process assembly provided by any one of the above embodiments of the present invention may be used as the semiconductor process assembly.

During the process of the semiconductor processing equipment provided in FIG. 7, the wafer 3 and the pressure ring 1 are lifted to the corresponding process position with the base 2, so that the wafer 3 and the pressure ring 1 are separated from the lining flanging structure 51 and are at a floating potential, and the pressure The ring 1 protects the wafer 3 in a safe position and does not generate a large positional deviation, and at the same time protects the interior of the reaction chamber 6 from being contaminated by sputtering. After the process gas flows into the uniform flow structure 8 through the air inlet pipeline 7 , it evenly enters between the target 9 and the wafer 3 through the air inlet channel 41 of the lined flanging structure 51 to form uniform plasma for thin film deposition.

On the one hand, the process gas flows into the diffusion channel between the liner and the pressure ring through the intake channel from bottom to top, and then enters between the target and the wafer, and is excited into plasma. This uniform intake method ensures that Plasma energy uniformity; on the other hand, the chamber wall, lining and base of the reaction chamber have been designed to pass water, which ensures a constant temperature during the process; due to the thin thickness of the pressure ring, the movement It is difficult to control the temperature through water cooling, but through the intake method of intake through the intake channel, the room temperature gas contacts the pressure ring and conducts heat exchange to cool the pressure ring, so that the temperature of the pressure ring is relatively stable. The purpose of controlling its temperature is achieved, thereby reducing its thermal radiation to the wafer, and avoiding problems such as abnormal stress and defects in the thin film.

It can be understood that the above embodiments are only exemplary embodiments adopted to illustrate the principle of the present invention, but the present invention is not limited thereto. For those skilled in the art, without departing from the spirit and essence of the present invention, various modifications and improvements can be made, and these modifications and improvements are also regarded as the protection scope of the present invention.

Claims (11)

1. A semiconductor process assembly, comprising a pressing ring for pressing an edge region of an upper surface of a wafer when a susceptor is in a process position, characterized in that it further comprises: The air intake structure is arranged below the pressure ring along the circumferential direction of the pressure ring. a diffusion channel that communicates with the space above the base; and a plurality of air intake channels are arranged in the air intake structure, and the air outlet ends of the plurality of air intake channels are all communicated with the diffusion channel, and are arranged along the pressure ring. Circumferential uniform distribution; The gas supply device is used for delivering process gas to each of the intake channels, and after the process gas flows out of the intake channels, the process gas enters the space above the base through the diffusion channel. 2 . The semiconductor process assembly according to claim 1 , further comprising an inner liner, the inner liner has a flanging structure bent inward from its lower end and extending upward, and the flanging structure is used in the supporting the pressing ring when the base descends; The air intake structure is formed in the flanging structure, and when the base is located at the process position, the diffusion channel is formed between the flanging structure and the pressing ring; and, in the flipping The air intake passage is provided in the side structure. 3 . The semiconductor process assembly according to claim 1 , further comprising an inner liner, the inner liner has a flanging structure bent inward from its lower end and extending upward, and the flanging structure is used in the supporting the pressing ring when the base descends; The air intake structure is arranged on the side wall of the flanging structure, and is fixedly connected with the side wall of the flanging structure. 4 . The semiconductor process assembly according to claim 1 , further comprising an inner liner, the inner liner has a flanging structure bent inward from its lower end and extending upward, and the flanging structure is used in the supporting the pressing ring when the base descends; The air intake structure is fixedly connected to the lower surface of the pressure ring; or, the air intake structure is fixedly connected to the side wall of the base; The air intake structure, the flanging structure and the press ring cooperate to form the diffusion channel. 5. The semiconductor process assembly according to any one of claims 1-3, wherein the air supply device comprises an air intake line, wherein, The gas outlet end of the gas inlet pipeline is connected with the gas inlet end of each of the gas inlet channels; the gas inlet end of the gas inlet pipeline extends to the outside of the reaction chamber and is connected with the gas source of the process gas. 6 . The semiconductor process assembly of claim 5 , wherein the gas inlet line penetrates a side wall of the reaction chamber below the susceptor and extends to the outside of the reaction chamber. 7 . 7. The semiconductor process assembly of claim 4, wherein the air supply device comprises an air intake line, wherein, The gas outlet end of the gas inlet pipeline is connected with the gas inlet end of each of the gas inlet passages; the gas inlet end of the gas inlet pipeline extends to the outside of the reaction chamber and is connected with the gas source of the process gas; and , the intake pipeline is a soft pipeline, so as to maintain connection with the intake passage when the intake structure rises and falls. 8. The semiconductor process assembly according to any one of claims 1-4, wherein the semiconductor process assembly further comprises a uniform flow structure, the uniform flow structure is fixedly connected to the air intake structure, and is located in the In the uniform flow structure, a uniform flow space is provided along the circumferential direction of the pressure ring, and the uniform flow space is communicated with each of the intake passages; the air supply device passes through the uniform flow space of the uniform flow structure The process gas is delivered into each of the inlet passages. 9 . The semiconductor process assembly of claim 8 , wherein the air intake structure comprises: a first body and a second body, the second body is sleeved on the periphery of the first body, and the The first body and the second body are both connected to the uniform flow structure, and the annular space between the first body and the second body forms the air intake passage. 10 . The semiconductor process assembly according to claim 1 , wherein each of the air inlet passages is a through hole passing through the air inlet structure along the axial direction of the pressure ring. 11 . 11. A semiconductor processing equipment, comprising a reaction chamber, wherein a semiconductor process assembly and a base for carrying a substrate are arranged in the reaction chamber, wherein the semiconductor process assembly adopts any one of claims 1-10 The semiconductor process assembly described in item.

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