CN112086336A - Semiconductor process assembly and semiconductor processing equipment - Google Patents
Semiconductor process assembly and semiconductor processing equipment Download PDFInfo
- Publication number
- CN112086336A CN112086336A CN201910507200.9A CN201910507200A CN112086336A CN 112086336 A CN112086336 A CN 112086336A CN 201910507200 A CN201910507200 A CN 201910507200A CN 112086336 A CN112086336 A CN 112086336A
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- air inlet
- gas
- pressure ring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
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- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention provides a semiconductor process assembly and semiconductor processing equipment, wherein the semiconductor process assembly comprises a pressing ring, wherein the pressing ring is used for pressing an edge area of the upper surface of a wafer when a base is positioned at a process position; further comprising: the air inlet structure is arranged below the pressure ring along the circumferential direction of the pressure ring, and when the base is located at the process position, a diffusion channel communicated with the space above the base is arranged between the air inlet structure and the pressure ring; a plurality of air inlet channels are arranged in the air inlet structure, and air outlet ends of the air inlet channels are communicated with the diffusion channels and are uniformly distributed along the circumferential direction of the pressure ring; and the gas supply device is used for conveying process gas to each gas inlet channel, and the process gas flows out of the gas inlet channels and then enters the upper space of the base through the diffusion channel. The invention solves the problem of uneven plasma energy caused by different lengths of gas paths reaching the surface of the substrate.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor process assembly and semiconductor processing equipment.
Background
At present, in the manufacturing process of integrated circuits, PVD (Physical Vapor Deposition) plays an irreplaceable role, almost all semiconductor devices use PVD for subsequent metal interconnection in the manufacturing process, the metal interconnection plays a role of providing electronic signals, micro-wiring and the like for each device in a chip.
As shown in fig. 1, which is a schematic view of a prior art PVD chamber configuration, the shield 1 ' overlaps the liner 2 ', the liner 2 ' overlaps the adapter 3 ', and the adapter 3 ' is installed in the chamber; the base 4 ' is used for bearing a substrate 5 ', the shielding piece 1 ' is lifted to a corresponding process position along with the movement of the base 4 ', the shielding piece 1 ' is separated from the liner 2 ', process gas enters a chamber below the base 4 ' from a gas inlet pipe 6 ' on the side wall of the chamber, further enters the chamber between the target 7 ' and the base 4 ' from a gap of flanging of the shielding piece 1 ' and the liner 2, when negative voltage is applied to the target 7 ', the process gas generates plasma, and the plasma impacts the target 7 ' to generate atoms or ions under the action of the negative voltage of the target 7 ', and the atoms or ions are finally deposited on the substrate 5 ' to form a film.
Obviously, as the process gas enters the chamber through the gas inlet pipeline on the side wall of the chamber, the length of the gas path reaching the surface of the substrate 5' is inconsistent, which easily causes the problems of uneven energy of the plasma generated by excitation, easy eccentricity of the deposited film and the like.
Disclosure of Invention
The invention aims to solve at least one technical problem in the prior art, and provides a semiconductor process assembly and semiconductor processing equipment so as to solve the problem of non-uniform plasma energy caused by different lengths of gas paths reaching the surface of a substrate.
To achieve the object of the present invention, there is provided a semiconductor process kit including a press ring for pressing an edge region of an upper surface of a wafer when a susceptor is in a process position; further comprising:
the air inlet structure is arranged below the pressure ring along the circumferential direction of the pressure ring, and when the base is located at the process position, a diffusion channel communicated with the space above the base is arranged between the air inlet structure and the pressure ring; a plurality of air inlet channels are arranged in the air inlet structure, and air outlet ends of the air inlet channels are communicated with the diffusion channels and are uniformly distributed along the circumferential direction of the pressure ring;
and the gas supply device is used for conveying process gas to each gas inlet channel, and the process gas flows out of the gas inlet channels and then enters the upper space of the base through the diffusion channel.
Preferably, the pressure ring further comprises a liner, the liner is provided with a flanging structure which is bent inwards from the lower end of the liner and extends upwards, and the flanging structure is used for supporting the pressure ring when the base descends;
the air inlet structure is formed in the flanging structure, and when the base is located at the process position, the diffusion channel is formed between the flanging structure and the pressure ring; and, the air intake passage is provided in the burring structure.
Preferably, the pressure ring further comprises a liner, the liner is provided with a flanging structure which is bent inwards from the lower end of the liner and extends upwards, and the flanging structure is used for supporting the pressure ring when the base descends;
the air inlet structure is arranged on the side wall of the flanging structure and is fixedly connected with the side wall of the flanging structure.
Preferably, the pressure ring further comprises a liner, the liner is provided with a flanging structure which is bent inwards from the lower end of the liner and extends upwards, and the flanging structure is used for supporting the pressure ring when the base descends;
the air inlet structure is fixedly connected with the lower surface of the compression ring; or the air inlet structure is fixedly connected with the side wall of the base;
the air inlet structure, the flanging structure and the pressure ring are matched to form the diffusion channel.
Preferably, the air supply means comprises an air intake line, wherein,
the air outlet end of the air inlet pipeline is connected with the air inlet end of each air inlet channel; and the gas inlet end of the gas inlet pipeline extends to the outside of the reaction chamber and is connected with a gas source of the process gas.
Preferably, the gas inlet pipe penetrates through a side wall of the reaction chamber below the susceptor and extends to the outside of the reaction chamber.
Preferably, the air supply means comprises an air intake line, wherein,
the air outlet end of the air inlet pipeline is connected with the air inlet end of each air inlet channel; the gas inlet end of the gas inlet pipeline extends to the outside of the reaction chamber and is connected with a gas source of the process gas; and the air inlet pipeline is a soft pipeline and is connected with the air inlet channel when the air inlet structure is lifted.
Preferably, the semiconductor process assembly further comprises a flow equalizing structure, the flow equalizing structure is fixedly connected with the gas inlet structure, flow equalizing spaces are arranged in the flow equalizing structure along the circumferential direction of the pressure ring, and the flow equalizing spaces are communicated with the gas inlet channels; the gas supply device conveys the process gas to each gas inlet channel through the uniform flow space of the uniform flow structure.
Preferably, the air intake structure includes: the air inlet structure comprises a first body and a second body, wherein the second body is sleeved on the periphery of the first body, the first body and the second body are both connected with the uniform flow structure, and an annular space between the first body and the second body forms the air inlet channel.
Preferably, each air inlet channel is a through hole which penetrates through the air inlet structure along the axial direction of the pressure ring.
A semiconductor processing device comprises a reaction chamber, wherein a semiconductor process assembly and a base used for bearing a substrate are arranged in the reaction chamber, and the semiconductor process assembly adopts the semiconductor process assembly.
The invention has the following beneficial effects:
the invention provides a semiconductor process assembly and semiconductor processing equipment, which comprise a pressure ring, an air inlet structure and an air supply device, wherein the pressure ring is used for pressing the edge area of the upper surface of a wafer when a base is positioned at a process position; the air inlet structure is arranged below the compression ring along the circumferential direction of the compression ring, and when the base is located at the process position, a diffusion channel communicated with the upper space of the base is arranged between the air inlet structure and the compression ring; a plurality of air inlet channels are arranged in the air inlet structure, and air outlet ends of the air inlet channels are communicated with the diffusion channels and are uniformly distributed along the circumferential direction of the compression ring; the gas supply device is used for conveying process gas into each gas inlet channel, and the process gas flows out of the gas inlet channels and then enters the space above the base through the diffusion channel. The invention can make the process gas enter the space above the base uniformly and quickly through the gas inlet structure and the diffusion channel by arranging the gas inlet structure, thereby ensuring the uniformity of the plasma energy when the surface of the wafer is processed. Meanwhile, the process gas is generally at room temperature, so that the pressure ring can be indirectly cooled, the temperature of the pressure ring is kept relatively stable, the heat radiation of the pressure ring to the wafer is reduced, and the process temperature of the wafer is kept relatively stable.
Drawings
FIG. 1 is a schematic diagram of a conventional PVD chamber configuration;
FIG. 2 is a schematic view of a first configuration of a semiconductor process kit component according to an embodiment of the invention;
FIG. 3 is a schematic structural view of an air intake structure according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a second configuration of a semiconductor processing assembly in accordance with an embodiment of the present invention;
FIG. 5 is a schematic view of a third structure of a semiconductor processing assembly according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a fourth configuration of a semiconductor processing assembly in accordance with an embodiment of the present invention;
FIG. 7 is a schematic diagram of a semiconductor processing apparatus according to an embodiment of the present invention;
fig. 8 is another schematic structural diagram of an air intake structure according to an embodiment of the present invention.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the semiconductor process module and the semiconductor processing equipment provided by the present invention are described in detail below with reference to the accompanying drawings.
Fig. 2 is a schematic structural diagram of a semiconductor process assembly according to an embodiment of the present invention, which includes a pressing ring 1, wherein the pressing ring 1 is used for pressing an edge region of an upper surface of a wafer 3 when a susceptor 2 is located at a process position; the semiconductor process assembly further comprises an air inlet structure 4 and an air supply device (not shown), wherein the air inlet structure 4 is arranged below the pressure ring 1 along the circumferential direction of the pressure ring, and when the base 2 is located at the process position, a diffusion channel communicated with the upper space of the base 2 is arranged between the air inlet structure 4 and the pressure ring 1; moreover, as shown in fig. 3, a plurality of air inlet channels 41 are arranged in the air inlet structure 4, and the air outlet ends of the plurality of air inlet channels 41 are all communicated with the diffusion channels and are uniformly distributed along the circumferential direction of the pressure ring 1; the gas supply device is used for supplying process gas into each gas inlet channel 41, and the process gas flows out of the gas inlet channels 41 and then enters the upper space of the base 2 through the diffusion channel.
The semiconductor process assembly provided by the embodiment of the invention can ensure that the process gas uniformly and quickly enters the space above the base 2 through the gas inlet structure 4 and the diffusion channel, thereby ensuring the uniformity of plasma energy when the surface of the wafer is processed. Meanwhile, the process gas is generally at room temperature, so that the pressure ring 1 can be indirectly cooled, the temperature of the pressure ring 1 is kept relatively stable, the heat radiation of the pressure ring to the wafer 3 is reduced, and the process temperature of the wafer is kept relatively stable.
Referring to fig. 2, the diffusion channel is an area indicated by an arrow, and the gas outlet end of the gas inlet channel 41 communicates with the diffusion channel indicated by the arrow.
Alternatively, the air inlet channel 41 may be a through hole that penetrates the air inlet structure 4 in the axial direction of the pressure ring 1, and the radial cross-sectional shape of the through hole may be various shapes such as a circle, a triangle, a square, and the like, and referring to fig. 3, the radial cross-sectional shape of the through hole is a circle. The diameter of the circular through-holes can be set differently depending on the process, and in general, each through-hole diameter can be set to about 2 mm.
In one embodiment of the present invention, as shown in fig. 4, the semiconductor process module further includes a liner 5, the liner 5 has a flange structure 51 bent inward from a lower end thereof and extending upward, the flange structure 51 is used for supporting the pressure ring 1 when the base is lowered, the air inlet structure 4 is formed in the flange structure 51, and a diffusion channel is formed between the flange structure 51 and the pressure ring 1 when the base 2 is located at the process position; and an intake passage 41 is provided in the burring structure 51. In this embodiment, the flanging structure 51 of the liner is used as a forming basis of the air inlet structure 4, and each air inlet channel 41 is directly arranged in the flanging structure 51, so that the structure is simple and easy to implement, and the purpose of improving the energy uniformity of the plasma is achieved.
In another embodiment of the present invention, the air inlet structure 4 may also be disposed on the sidewall of the flange structure 51, and fixedly connected to the sidewall of the flange structure 51. In this embodiment, the air inlet structure 4 is arranged as an independent component, the structure is similar to the structure shown in fig. 3, the air inlet structure 4 is arranged on the side wall of the flanging structure 51, further processing of the flanging structure 51 can be avoided, the structure is simple and easy to implement, maintenance is more convenient, and the purpose of improving the uniformity of plasma energy can be achieved.
In another embodiment of the present invention, as shown in fig. 5, the air inlet structure 4 may also be fixedly connected to the lower surface of the pressure ring 1; alternatively, as shown in fig. 6, the air intake structure 4 may be fixedly connected to the side wall of the base 2. In this embodiment, the air inlet structure 4 is also provided as an independent component, and the air inlet structure 4, the flanging structure 51 and the pressure ring 1 cooperate to form a diffusion channel. In the embodiment, various fixing forms of the air inlet structure 4 are provided, and in the process of the specific embodiment, different setting schemes can be flexibly selected to set the air inlet structure 4 according to the position relationship of different components, the shape change of a specific component (such as a pressure ring) and other factors.
Based on the arrangement of the air inlet structure 4, in an embodiment of the present invention, as shown in fig. 7, the air supply device may include an air inlet pipeline 7, wherein an air outlet end of the air inlet pipeline 7 is connected with an air inlet end of each air inlet channel 41; the inlet end of the inlet line 7 extends outside the reaction chamber 6 and is connected to a source of process gas.
The gas source is used for providing process gas for the gas inlet pipeline. In fig. 4, the burring 51 of the liner 5 serves as a diffusion channel between the air inlet structure 4 and the pressure ring 1.
Preferably, as shown in fig. 7, the gas inlet line 7 penetrates through the side wall of the reaction chamber 6 below the susceptor 2 and extends to the outside of the reaction chamber 6.
For the case that air inlet structure 4 is fixedly connected with the lower surface of pressure ring 1 or air inlet structure 4 is fixedly connected with the side wall of base 2, air inlet pipeline 7 needs to be set as a soft pipeline, and some margin is set on the length to keep being connected with air inlet channel 41 when air inlet structure 4 is lifted.
In another embodiment of the invention, as shown in fig. 7, the semiconductor process assembly may further include a flow equalizing structure 8, the flow equalizing structure 8 is fixedly connected with the gas inlet structure 4, and a flow equalizing space is circumferentially arranged in the flow equalizing structure 8 along the circumferential direction of the pressure ring 1, and the flow equalizing space is communicated with each gas inlet channel; the gas supply means supplies the process gas into the respective gas inlet passages 41 through the uniform flow space of the uniform flow structure 8.
Based on the uniform flow structure 8, as shown in fig. 8, the air intake structure 4 may be further provided to include: the air inlet structure comprises a first body 42 and a second body 43, wherein the second body 43 is sleeved on the periphery of the first body 42, the first body 42 and the second body 43 are both connected with the uniform flow structure 8, and an annular space between the first body 42 and the second body 43 forms an air inlet channel 41. The air inlet structure provided by the embodiment of the invention is a hollow air inlet structure, and the air inlet channel 41 is a hollow cavity which penetrates through the air inlet structure along the axial direction of the pressure ring 1. The width of the hollow cavity may be variously set depending on the process, and generally, the width of the hollow cavity may be set to about 2 mm.
With respect to the semiconductor process kit provided by the above embodiment, the present invention also provides a semiconductor processing apparatus, as shown in fig. 7, including: the reaction chamber 6, and the semiconductor process module and the susceptor 2 for carrying the substrate are arranged in the reaction chamber 6, and the semiconductor process module can adopt the semiconductor process module provided by any one of the above embodiments of the present invention.
When the semiconductor processing equipment provided by fig. 7 is used for processing, the wafer 3 and the pressure ring 1 are lifted to corresponding processing positions along with the base 2, so that the wafer 3 and the pressure ring 1 are separated from the lining flanging structure 51 and are at a suspension potential, the pressure ring 1 protects the wafer 3 from being at a safe position, large position deviation cannot be generated, and the interior of the reaction chamber 6 is protected from sputtering pollution. After flowing into the uniform flow structure 8 through the air inlet pipeline 7, the process gas uniformly enters between the target 9 and the wafer 3 through the air inlet channel 41 of the lining flanging structure 51 to form uniform plasma for film deposition.
On one hand, the process gas flows into the diffusion channel between the liner and the pressure ring from bottom to top through the gas inlet channel, then enters between the target and the wafer and is excited into plasma, and the uniform gas inlet mode ensures the energy uniformity of the plasma; on the other hand, as the wall, the lining, the base and other structures of the reaction chamber are designed to be water-flowing, the temperature in the process is ensured to be constant; because the thickness of clamping ring is thin, the particularity such as motion is frequent, it is comparatively difficult through water-cooling accuse temperature, and through the mode of admitting air by inlet channel admit air, carries out the heat exchange after room temperature gas contacts the clamping ring, cools off the clamping ring, makes the temperature of clamping ring relatively stable, realizes the purpose to its accuse temperature, and then reduces its thermal radiation to the wafer, avoids producing stress anomaly, defect scheduling problem of film.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (11)
1. A semiconductor processing assembly comprising a clamping ring for pressing against an edge region of an upper surface of a wafer when a susceptor is in a processing position, further comprising:
the air inlet structure is arranged below the pressure ring along the circumferential direction of the pressure ring, and when the base is located at the process position, a diffusion channel communicated with the space above the base is arranged between the air inlet structure and the pressure ring; a plurality of air inlet channels are arranged in the air inlet structure, and air outlet ends of the air inlet channels are communicated with the diffusion channels and are uniformly distributed along the circumferential direction of the pressure ring;
and the gas supply device is used for conveying process gas to each gas inlet channel, and the process gas flows out of the gas inlet channels and then enters the upper space of the base through the diffusion channel.
2. The semiconductor processing assembly of claim 1, further comprising a liner having a flange structure bent inwardly from a lower end thereof and extending upwardly for supporting the press ring when the susceptor is lowered;
the air inlet structure is formed in the flanging structure, and when the base is located at the process position, the diffusion channel is formed between the flanging structure and the pressure ring; and, the air intake passage is provided in the burring structure.
3. The semiconductor processing assembly of claim 1, further comprising a liner having a flange structure bent inwardly from a lower end thereof and extending upwardly for supporting the press ring when the susceptor is lowered;
the air inlet structure is arranged on the side wall of the flanging structure and is fixedly connected with the side wall of the flanging structure.
4. The semiconductor processing assembly of claim 1, further comprising a liner having a flange structure bent inwardly from a lower end thereof and extending upwardly for supporting the press ring when the susceptor is lowered;
the air inlet structure is fixedly connected with the lower surface of the compression ring; or the air inlet structure is fixedly connected with the side wall of the base;
the air inlet structure, the flanging structure and the pressure ring are matched to form the diffusion channel.
5. The semiconductor process module of any one of claims 1-3, wherein the gas supply comprises a gas inlet line, wherein,
the air outlet end of the air inlet pipeline is connected with the air inlet end of each air inlet channel; and the gas inlet end of the gas inlet pipeline extends to the outside of the reaction chamber and is connected with a gas source of the process gas.
6. The semiconductor process assembly of claim 5, wherein the gas inlet line extends through a sidewall of the reaction chamber below the susceptor and to an exterior of the reaction chamber.
7. The semiconductor process module of claim 4, wherein the gas supply comprises a gas inlet line, wherein,
the air outlet end of the air inlet pipeline is connected with the air inlet end of each air inlet channel; the gas inlet end of the gas inlet pipeline extends to the outside of the reaction chamber and is connected with a gas source of the process gas; and the air inlet pipeline is a soft pipeline and is connected with the air inlet channel when the air inlet structure is lifted.
8. The semiconductor process assembly according to any one of claims 1 to 4, further comprising a flow equalizing structure, wherein the flow equalizing structure is fixedly connected with the gas inlet structure, and a flow equalizing space is arranged in the flow equalizing structure along the circumferential direction of the pressure ring, and is communicated with each gas inlet channel; the gas supply device conveys the process gas to each gas inlet channel through the uniform flow space of the uniform flow structure.
9. The semiconductor process kit of claim 8, wherein the gas inlet structure comprises: the air inlet structure comprises a first body and a second body, wherein the second body is sleeved on the periphery of the first body, the first body and the second body are both connected with the uniform flow structure, and an annular space between the first body and the second body forms the air inlet channel.
10. The semiconductor process kit of any of claims 1-4, wherein each gas inlet channel is a through hole extending through the gas inlet structure in an axial direction of the pressure ring.
11. A semiconductor processing apparatus comprising a reaction chamber having disposed therein a semiconductor process kit part and a susceptor for carrying a substrate, wherein the semiconductor process kit part employs a semiconductor process kit part as claimed in any one of claims 1 to 10.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201910507200.9A CN112086336A (en) | 2019-06-12 | 2019-06-12 | Semiconductor process assembly and semiconductor processing equipment |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910507200.9A CN112086336A (en) | 2019-06-12 | 2019-06-12 | Semiconductor process assembly and semiconductor processing equipment |
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|---|---|---|---|---|
| EP0489439A1 (en) * | 1990-12-05 | 1992-06-10 | Applied Materials, Inc. | Vacuum deposition apparatus for CVD processing |
| US20020046810A1 (en) * | 2000-10-25 | 2002-04-25 | Masayuki Tanaka | Processing apparatus |
| JP2002198416A (en) * | 2000-12-27 | 2002-07-12 | Tokyo Electron Ltd | Processor |
| US6440219B1 (en) * | 2000-06-07 | 2002-08-27 | Simplus Systems Corporation | Replaceable shielding apparatus |
| CN105695936A (en) * | 2014-11-26 | 2016-06-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Pre-cleaning chamber and plasma processing apparatus |
| CN105755436A (en) * | 2014-12-16 | 2016-07-13 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Membrane deposition method |
| CN108728791A (en) * | 2017-04-25 | 2018-11-02 | 北京北方华创微电子装备有限公司 | A kind of admission gear and its air inlet method and semiconductor processing equipment |
-
2019
- 2019-06-12 CN CN201910507200.9A patent/CN112086336A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0489439A1 (en) * | 1990-12-05 | 1992-06-10 | Applied Materials, Inc. | Vacuum deposition apparatus for CVD processing |
| US6440219B1 (en) * | 2000-06-07 | 2002-08-27 | Simplus Systems Corporation | Replaceable shielding apparatus |
| US20020046810A1 (en) * | 2000-10-25 | 2002-04-25 | Masayuki Tanaka | Processing apparatus |
| JP2002198416A (en) * | 2000-12-27 | 2002-07-12 | Tokyo Electron Ltd | Processor |
| CN105695936A (en) * | 2014-11-26 | 2016-06-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Pre-cleaning chamber and plasma processing apparatus |
| CN105755436A (en) * | 2014-12-16 | 2016-07-13 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Membrane deposition method |
| CN108728791A (en) * | 2017-04-25 | 2018-11-02 | 北京北方华创微电子装备有限公司 | A kind of admission gear and its air inlet method and semiconductor processing equipment |
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