CN202482486U - Silicon seed crystal clamping device for growing mono-crystalline silicon with Czochralski method - Google Patents
Silicon seed crystal clamping device for growing mono-crystalline silicon with Czochralski method Download PDFInfo
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- CN202482486U CN202482486U CN2011205464697U CN201120546469U CN202482486U CN 202482486 U CN202482486 U CN 202482486U CN 2011205464697 U CN2011205464697 U CN 2011205464697U CN 201120546469 U CN201120546469 U CN 201120546469U CN 202482486 U CN202482486 U CN 202482486U
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Abstract
The utility model discloses a silicon seed crystal clamping device for growing mono-crystalline silicon with a Czochralski method. The silicon seed crystal clamping device mainly comprises a seed crystal clamping device body consisting of a connecting rod, a molybdenum heavy hammer and a seed crystal chuck, wherein the connecting rod is arranged at the upper end of the molybdenum heavy hammer and the seed crystal chuck is arranged at the lower end of the molybdenum heavy hammer; the seed crystal chuck is internally provided with a hollow cavity which is through up and down and corresponds to the appearance of a clamped seed crystal; and the seed crystal chuck is provided with a transverse through air discharging hole. The seed crystal clamping device disclosed by the utility model adopts the seed crystal with large and small heads so that the seed crystal can be firmly fixed in the seed crystal clamping device without slipping off; the seed crystal is uniformly stressed, can bear great weight and is not easy to break; the growth process of a mono-crystal can be smoothly finished; the production cost is reduced; the production efficiency of the silicon mono-crystal is improved; the seed crystal chuck is provided with the air discharging hole so that the air in the clamping device can be sealed in a process of filling the seed crystal; and the air can be discharged when a mono-crystalline furnace is emptied and the potential safety hazard is eliminated.
Description
Technical field
The utility model relates to a kind of silicon seed crystal holder for monocrystal silicon by vertical pulling process, belongs to monocrystalline silicon growing and uses the clamper technical field.
Background technology
At present, the materials of electronic components above 98% all is to use silicon single crystal, adopts vertical pulling method to prepare silicon single crystal and has accounted for about 85%.Czochralski silicon monocrystal generally can be divided into electronic-grade, solar level, and the electronic-grade silicon monocrystalline is used to make unicircuit and other electron component, and solar energy level silicon single crystal is used for solar cell.Each specification pulling of crystals all is to use flexible axle to lift the type czochralski crystal growing furnace, in inert gas environment, with the fusing of silicon material, uses the Grown by CZ Method dislocation-free single crystal with graphite resistance heater.
In czochralski silicon monocrystal is produced, need a kind of silicon seed of particular crystal orientation to make crystal seed, growing the monocrystalline of particular crystal orientation, crystal orientation commonly used is＜100＞,＜111＞,＜110＞etc.Seed crystal is generally right cylinder, rectangular parallelepiped or a big little right cylinder, and seed crystal is fixed in the seedholder through certain way.
In vertical pulling technology; Seedholder is necessary parts, and seed crystal need be securely fixed in the seedholder, guarantees that seed crystal can not come off in the pulling process; Single crystal growth process can be accomplished smoothly, so the structure of the seed chuck of clamper lower end will match with the shape of the silicon seed of clamping.In general, the connecting rod of the upper end of clamper, the weight at middle part are that metal molybdenum is processed, and the seed chuck of lower end can be processed with molybdenum or high purity graphite.
At present, the seed crystal that uses in the pulling of silicon single crystal production mainly contains three kinds from the profile classification, and seedholder also can be divided into following three kinds of schemes according to the difference of using seed crystal:
1. user's seed crystal seed chuck: square seed crystal is a rectangular parallelepiped silicon single-crystal; Seed crystal one end side surface transversal slotting is bundled on the seed chuck with molybdenum filament, and square seed crystal load-bearing is less; Be generally used for 14 inch below the thermal field of charging capacity less than 30 ㎏; Be used for charging capacity and produce the seed crystal easy fracture, cause preparing procedure failure, cause than large economy and lose greater than the pulling of crystals of 30 ㎏.
2. use circle seed crystal seed chuck: the circle seed crystal is a right cylinder, and end side surface fluting is fixed on the weight seed chuck with the molybdenum pin; Owing to be prone to cause the seed crystal damage during seed crystal fluting, add with pin and fix, the seed crystal unbalance stress; Crystal gravity all acts on round seed crystal one end side surface fluting place; Because stressed area is little, unit surface suffered power in fluting place is very big, fracture easily after the seed crystal load-bearing.The circle seed crystal is generally used for 18 inch below the thermal field of charging capacity less than 60 ㎏.
3. use XO sub seed crystal seed chuck: like one Chinese patent application number is 02131185.4; Publication number is CN1490436A; The utility model name is called the Chinese utility model patent of " a kind of silicon seed crystal holder for monocrystal silicon by vertical pulling process "; It discloses a kind of silicon seed crystal holder for monocrystal silicon by vertical pulling process; Described silicon seed clamper upper end is the connecting parts that is connected with seed shaft; Silicon seed clamper lower end comprises silicon seed clamper top and silicon seed clamper bottom, and for detachably to connect, described silicon seed clamper bottom includes the cavity of a up big and down small and up/down perforation between described silicon seed clamper top and the described silicon seed clamper bottom.This seedholder adopts XO sub seed crystal, the seed crystal seed chuck of packing into, and seed chuck is connected thread up screw thread, fixedly seed crystal through the outside screw screw thread with weight; Seed crystal is stressed, and evenly supporting power is big, and easy fracture not can be used for the silicon single-crystal production below 500 ㎏.But because XO sub seed crystal stub end diameter is bigger, seed chuck is again to be connected with the IT screw thread of weight lower end through the outside screw screw thread, causes the weight diameter bigger than normal; During the czochralski silicon monocrystal of major diameter, big thermal field is produced now, generally adopt heat shielding technology, to improve pulling rate, to reduce power consumption.Because the heat shielding lower opening can get into the well heater certain distance, has limited the charge of quartz crucible, adopt the mode of suspension heat shielding to increase charging capacity usually, improve silicon single-crystal production efficiency.The heat shielding hitch is installed on the weight connecting rod, through hitch heat shielding is risen during shove charge, increases the distance between heat shielding and the quartz crucible, to increase charge, after waiting to expect to melt volume-diminished, heat shielding is put down again, and carries out silicon single-crystal and draws.After heat shielding was put down, the extension arm of hitch was sagging naturally, presses close to seed chuck, and in order not influence pulling operation, the length of seedholder must be greater than the extension arm lengths of hitch.
Adopt the single crystal growing furnace of suspension heat shielding technology, like the seedholder of employing scheme 3, owing to need bigger diameter, length, cause clamper volume, weight to be multiplied, the production that has greatly increased clamper at double; Because clamper does not have venting hole, be enclosed in the air in the clamper during dress seed crystal, when finding time, single crystal growing furnace can not get rid of; Silicon single-crystal production is in the hot environment of degree more than 1,000, to carry out, and the volume of air in the clamper will be heated and sharply be expanded, and possibly cause the air leaking of clamper explosion or clamper, cause the oxidation of silicon material, and silicon single-crystal production can't be carried out smoothly.
The utility model content
The purpose of the utility model is: a kind of silicon seed crystal holder for monocrystal silicon by vertical pulling process that possesses venting hole is provided, solves existing seedholder user seed crystal, charging capacity is less than 30 ㎏, seed crystal easy fracture during pulling of crystals is produced; Seedholder uses the circle seed crystal, and charging capacity is less than 60 ㎏, seed crystal easy fracture during pulling of crystals is produced; Seedholder uses the XO sub seed crystal, and seed chuck is connected with weight through the outside screw screw thread, and the weight diameter is bigger, and the production cost of clamper is higher; Clamper does not have venting hole, has technical problems such as potential safety hazard.
The purpose of the utility model realizes through following technical proposals: a kind of silicon seed crystal holder for monocrystal silicon by vertical pulling process; Comprise the seedholder body of mainly forming by connecting rod, molybdenum weight and seed chuck; Said connecting rod is located at the upper end of molybdenum weight; Seed chuck is located at the lower end of molybdenum weight, be provided with in the said seed chuck up/down perforation and with the corresponding cavity of clamping seed crystal profile, said seed chuck is provided with the venting hole that laterally runs through.
As a kind of optimal way, said seed chuck is threaded with the molybdenum weight through the IT screw thread.
As further optimal way, the seed chuck that said seed chuck adopts high purity graphite or metal molybdenum to process.
As further optimal way, the connecting rod that said connecting rod adopts 304L stainless steel or metal molybdenum to process.
As further optimal way, said connecting rod is provided with the heat shielding hitch.
As further optimal way, the length of said seedholder body is greater than the extension arm lengths of heat shielding hitch.
The working process of the utility model is: the utility model silicon seed crystal holder for monocrystal silicon by vertical pulling process adopts the XO sub seed crystal, and the seed crystal seed chuck of packing into is put Graphite pad on seed crystal; Through IT screw thread and weight external thread wire buckle, thread up screw thread, seed crystal can be securely fixed in the seedholder and can not come off with seed chuck; Seed crystal is stressed evenly; Supporting power is big, and easy fracture not can guarantee that single crystal growth process accomplishes smoothly.
Compared with prior art; The beneficial effect of the utility model: the utility model seedholder adopts the XO sub seed crystal; Seed crystal can be securely fixed in the seedholder and can not come off, seed crystal is stressed evenly, supporting power greatly, easy fracture not, can guarantee that single crystal growth process accomplishes smoothly; Reduce production cost, improved the production efficiency of silicon single-crystal, venting hole has been arranged on the seed chuck, be enclosed in the air in the clamper during dress seed crystal, can get rid of when single crystal growing furnace is found time, eliminated potential safety hazard.
Description of drawings
Fig. 1 is the structural representation of the utility model;
Fig. 2 is a seedholder main body structure synoptic diagram;
Fig. 3 is the structural representation of connecting rod;
Fig. 4 is the structural representation of molybdenum weight;
Fig. 5 is the structural representation of seed chuck.
Wherein: seedholder body-10, connecting rod-1, molybdenum weight-2, seed chuck-3, cavity-4, venting hole-5, heat shielding hitch ring-type raising legs-6, the heat shielding hitch is hung arm-7, Graphite pad-8, heat shielding-9, seed crystal-11.
Embodiment
For the purpose, technical scheme and the advantage that make the utility model is clearer,, the utility model is further elaborated below in conjunction with accompanying drawing and embodiment.Should be appreciated that specific embodiment described herein only in order to explanation the utility model, and be not used in qualification the utility model.
Disclosed all characteristics in this specification sheets, or the step in disclosed all methods or the process are except the speciality of mutual repulsion and/or the step; All can make up by any way; Only if special narration all can be replaced by other equivalences or the alternative features with similar purpose, promptly; Only if special narration, an embodiment in a series of equivalences of each characteristic or the similar characteristics.
Fig. 1-5 shows the silicon seed crystal holder for monocrystal silicon by vertical pulling process that the utility model embodiment provides, and for the ease of explanation, only shows the part relevant with the utility model embodiment.
Shown in Fig. 1-5, a kind of silicon seed crystal holder for monocrystal silicon by vertical pulling process, it comprises the seedholder body of mainly being made up of connecting rod 1, molybdenum weight 2 and seed chuck 3 10, said seed chuck 3 adopts high purity graphite or metal molybdenum to process.Said connecting rod 1 is located at the upper end of molybdenum weight 2, and seed chuck 3 is located at the lower end of molybdenum weight 2, and specifically, said seed chuck 3 is threaded with molybdenum weight 2 through the IT screw thread; Said connecting rod adopts 304L stainless steel (the 304L stainless steel is a kind of stainless material of versatility) or metal molybdenum to process.Be provided with a up/down perforation and the cavity 4 corresponding with clamping seed crystal profile in the said seed chuck 3, said seed chuck 3 is provided with the venting hole 5 that laterally runs through.Said connecting rod 1 is provided with heat shielding hitch ring-type raising legs 6; The length of said seedholder body 10 is hung arm 7 length greater than the heat shielding hitch.
The utility model silicon seed crystal holder for monocrystal silicon by vertical pulling process adopts XO sub seed crystal 11, and seed crystal 11 seed chuck of packing into is put Graphite pad 8 on seed crystal 11; Through IT screw thread and weight external thread wire buckle, thread up screw thread, seed crystal can be securely fixed in the seedholder and can not come off with seed chuck; Seed crystal is stressed evenly, and supporting power is big, not easy fracture; Can guarantee that single crystal growth process accomplishes smoothly, this clamper can be used for the silicon single-crystal production below 500 ㎏.
The utility model silicon seed crystal holder for monocrystal silicon by vertical pulling process adopts the XO sub seed crystal; In order to reduce cost; Adopt elongated molybdenum weight to link to each other with seed chuck, be applicable to and adopt the mode of suspension heat shielding to increase charging capacity, improve silicon single-crystal production efficiency through the outside screw screw thread.The heat shielding hitch is installed on the weight connecting rod, passes through hitch during shove charge heat shielding 9 is risen, and increases the distance between heat shielding 9 and the quartz crucible, to increase charge, after waiting to expect to melt volume-diminished, heat shielding 9 is put down again, and carries out silicon single-crystal and draws.After heat shielding was put down, the extension arm of hitch was sagging naturally, presses close to seed chuck, and in order not influence pulling operation, the length of seedholder must be greater than the extension arm lengths of hitch.
The utility model silicon seed crystal holder for monocrystal silicon by vertical pulling process adopts the XO sub seed crystal, and venting hole is arranged on the seed chuck, is enclosed in the air in the clamper during dress seed crystal, can get rid of when single crystal growing furnace vacuumizes, and has eliminated potential safety hazard.
The above is merely the preferred embodiment of the utility model; Not in order to restriction the utility model; Any modification of being done within all spirit and principles at the utility model, be equal to replacement and improvement etc., all should be included within the protection domain of the utility model.
Claims (6)
1. silicon seed crystal holder for monocrystal silicon by vertical pulling process; Comprise the seedholder body of mainly forming by connecting rod, molybdenum weight and seed chuck; It is characterized in that: said connecting rod is located at the upper end of molybdenum weight; Seed chuck is located at the lower end of molybdenum weight, be provided with in the said seed chuck up/down perforation and with the corresponding cavity of clamping seed crystal profile, said seed chuck is provided with the venting hole that laterally runs through.
2. silicon seed crystal holder for monocrystal silicon by vertical pulling process as claimed in claim 1 is characterized in that: said seed chuck is threaded with the molybdenum weight through the IT screw thread.
3. like the described silicon seed crystal holder for monocrystal silicon by vertical pulling process of arbitrary claim in claim 1 or 2, it is characterized in that: the seed chuck that said seed chuck adopts high purity graphite or metal molybdenum to process.
4. like the described silicon seed crystal holder for monocrystal silicon by vertical pulling process of arbitrary claim in claim 1 or 2, it is characterized in that: the connecting rod that said connecting rod adopts 304L stainless steel or metal molybdenum to process.
5. silicon seed crystal holder for monocrystal silicon by vertical pulling process as claimed in claim 4 is characterized in that: said connecting rod is provided with the heat shielding hitch.
6. silicon seed crystal holder for monocrystal silicon by vertical pulling process as claimed in claim 5 is characterized in that: the length of said seedholder body is greater than the extension arm lengths of heat shielding hitch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011205464697U CN202482486U (en) | 2011-12-23 | 2011-12-23 | Silicon seed crystal clamping device for growing mono-crystalline silicon with Czochralski method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011205464697U CN202482486U (en) | 2011-12-23 | 2011-12-23 | Silicon seed crystal clamping device for growing mono-crystalline silicon with Czochralski method |
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| Publication Number | Publication Date |
|---|---|
| CN202482486U true CN202482486U (en) | 2012-10-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011205464697U Expired - Lifetime CN202482486U (en) | 2011-12-23 | 2011-12-23 | Silicon seed crystal clamping device for growing mono-crystalline silicon with Czochralski method |
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| CN (1) | CN202482486U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103924299A (en) * | 2014-05-12 | 2014-07-16 | 深圳晶蓝地光电科技有限公司 | Ventilation method for sapphire crystal growth furnace |
| CN105780106A (en) * | 2014-12-23 | 2016-07-20 | 江苏拜尔特光电设备有限公司 | Improved semi-cone seed crystal chuck |
| CN105780128A (en) * | 2014-12-23 | 2016-07-20 | 江苏拜尔特光电设备有限公司 | Improved heavy hammer for single crystal furnace |
| CN107059113A (en) * | 2017-04-14 | 2017-08-18 | 南京晶能半导体科技有限公司 | Semiconductor grade silicon single crystal furnace seed crystal chuck device and its application |
-
2011
- 2011-12-23 CN CN2011205464697U patent/CN202482486U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103924299A (en) * | 2014-05-12 | 2014-07-16 | 深圳晶蓝地光电科技有限公司 | Ventilation method for sapphire crystal growth furnace |
| CN105780106A (en) * | 2014-12-23 | 2016-07-20 | 江苏拜尔特光电设备有限公司 | Improved semi-cone seed crystal chuck |
| CN105780128A (en) * | 2014-12-23 | 2016-07-20 | 江苏拜尔特光电设备有限公司 | Improved heavy hammer for single crystal furnace |
| CN107059113A (en) * | 2017-04-14 | 2017-08-18 | 南京晶能半导体科技有限公司 | Semiconductor grade silicon single crystal furnace seed crystal chuck device and its application |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: ERMEI INSTITUTE OF SEMICONDUCTOR MATERIAL Free format text: FORMER OWNER: DONGFANG ELECTRIC EMEI SEMICONDUCTOR MATERIAL CO., LTD. Effective date: 20131115 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20131115 Address after: 614200 No. 88 Fu Bei Road, Mount Emei, Sichuan, Leshan Patentee after: Emei Semiconductor Material Institute Address before: 614200 No. 88 Fu Bei Road, Mount Emei, Sichuan, Leshan Patentee before: Dongfang Electric EMEI Semiconductor Material Co.,Ltd. |
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| CX01 | Expiry of patent term |
Granted publication date: 20121010 |
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| CX01 | Expiry of patent term |