CN202658267U - Seed chuck used for growth of czochralski silicon singlecrystal - Google Patents
Seed chuck used for growth of czochralski silicon singlecrystal Download PDFInfo
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- CN202658267U CN202658267U CN 201120543003 CN201120543003U CN202658267U CN 202658267 U CN202658267 U CN 202658267U CN 201120543003 CN201120543003 CN 201120543003 CN 201120543003 U CN201120543003 U CN 201120543003U CN 202658267 U CN202658267 U CN 202658267U
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Abstract
The utility model discloses a seed chuck used for growth of czochralski silicon singlecrystal. The seed chuck comprises a hook, an upper section, an intermediate section, a lower section and a pin, wherein the center of the lower section is the fixed slot of the seed; a pin hole is formed at one side of the lower part of the lower section; the pin hole is a through hole in a common keyway shape; the pin is arranged in the pin hole; the pin is cylindrical; and a plane with the width e of 3-6mm is formed at one side of the pin. The hook, the upper section, the intermediate section, the lower section and the pin are made of high temperature molybdenum. Through the seed chuck, when the seed is attached, an operator can observe the fit state of the contact part of the pin and the fixed plane of the seed, and the contact part of the pin and the fixed plane of the seed is ensured to be a plane. The seed chuck can remarkably improve the weight of the silicon singlecrystal of seed czochralski, and remarkably reduces the opportunity of seed fracture generated by stress concentration at the contact part of the pin and the seed. By using the seed chuck, the weight of the singlecrystal of the seed czochralski can reach 300-400kg.
Description
Technical field
The utility model relates to Modelling of Crystal Growth in CZ-Si Pulling, relates in particular to a kind of crystal seed chuck for Modelling of Crystal Growth in CZ-Si Pulling.
Background technology
In the Modelling of Crystal Growth in CZ-Si Pulling stove commonly used crystal seed chuck as depicted in figs. 1 and 2, chuck comprises hook 1, epimere 2, stage casing 3, hypomere 4, pin 5 from top to bottom in turn, linking up with 1 top has a groove, pinhole is left in the both sides of groove; Epimere 2 is a right cylinder, and length a is 100-150mm, diameter d
1Be about 50-70mm, the top of epimere 2 is a frustum of a cone, the base angle of this frustum of a cone
1Be 60 °-70 °, the height a ' be 5-10mm; Stage casing 3 is a frustum of a cone, and its height b is 40-50mm; Hypomere 4 is a right cylinder, and height c is 100-150mm, diameter d
2Be 40-50mm, the lower end of hypomere 4 is a frustum of a cone, base angle
2Be that 60 °-70 ° height c ' are 5-10mm, the center of hypomere 4 is the pickup groove 9 of crystal seed, and pickup groove 9 is positioned at lower part of hypomere 4 and to lower opening, the diameter d of pickup groove 9
6Be 12-13mm, the axis of pickup groove 9 and chuck dead in line, bottom one side of hypomere 4 has pinhole 7, and pinhole 7 is circular through hole, the diameter d of pinhole 7
5Be 5-8mm, the center of circle, cross section of pinhole 7 is 7-9mm from the distance of chuck axis; Pin 5 is housed in the pinhole 7, and pin 5 is the cylindrical of length 40-50mm, the diameter d of pin 5
4Be 5-8mm, d5 is than the large 0.1-0.2mm of d4.
As shown in Figure 2, pin 5 is that wire contacts with the contact position of the fixed face 8 of crystal seed 6, and when the weight of the monocrystalline that hangs below the crystal seed 6 surpassed 100 kilograms, crystal seed 6 ruptured in the contact position easily.
Summary of the invention
The utility model is to overcome the deficiencies in the prior art, and a kind of crystal seed chuck for Modelling of Crystal Growth in CZ-Si Pulling is provided.
The crystal seed chuck that is used for Modelling of Crystal Growth in CZ-Si Pulling comprises hook, epimere, stage casing, hypomere, pin from top to bottom in turn, and there is a groove on the hook top, and pinhole is left in the both sides of groove; Epimere comprises right cylinder and the frustum of a cone that is connected, and total height a is 100-150mm, diameter d
1Be 50-70mm, the base angle of the frustum of a cone
1Be that 60 °-70 °, frustum of a cone height a ' are 5-10mm; The stage casing is the frustum of a cone, and its height b is 40-50mm; Hypomere comprises right cylinder and the frustum of a cone that is connected, and total height c is 100-150mm, diameter d
2Be 40-50mm, frustum of a cone base angle
2Be 60 °-70 °, frustum of a cone height c ' is 5-10mm, and the lower central of hypomere is provided with the pickup groove of crystal seed, the diameter d of pickup groove
6Be 12-13mm, bottom one side of hypomere has pinhole, and pinhole is the through hole of common key groove shape, and the radius of circle R at the two ends, cross section of pinhole is 2.5-4mm, center of circle spacing h
1Be 1-5mm, the center of circle of the circular arc of the close jaw face in the cross section of pinhole is 7-9mm from the distance of chuck axis; Pin is housed in the pinhole, and pin is the cylindrical of length 40-50mm, and the pin side is provided with the plane that width e is 3-6mm, and the plane is parallel with the pin axis, the diameter d of pin
4Be 5-8mm, d
4=2R.
The material of described hook, epimere, stage casing, hypomere, pin is High-Temperature Mo.
The utility model can make the operator observe the fit-state of contact position of the fixed face of pin and crystal seed when crystal seed is installed, and the contact position of guaranteeing the fixed face of pin and crystal seed is the plane.The utility model can significantly improve the weight of the silicon single-crystal that crystal seed lifts, and is reduced in significantly that pin and crystal seed contact position stress are concentrated and chance that the crystal seed fracture occurs.Use crystal seed chuck of the present utility model, the weight of the monocrystalline that crystal seed lifts can reach 300-400kg.
Description of drawings
Fig. 1 is the crystal seed chuck structure synoptic diagram of Modelling of Crystal Growth in CZ-Si Pulling commonly used;
Fig. 2 is the crystal seed chuck hypomere sectional view of Modelling of Crystal Growth in CZ-Si Pulling commonly used;
Fig. 3 is the crystal seed chuck structure synoptic diagram for Modelling of Crystal Growth in CZ-Si Pulling;
Fig. 4 is chuck hypomere sectional view of the present utility model;
Fig. 5 uses Modelling of Crystal Growth in CZ-Si Pulling furnace structure synoptic diagram of the present utility model;
Among the figure: hook 1, epimere 2, stage casing 3, hypomere 4, pin 5, crystal seed 6, pinhole 7, fixed face 8, pickup groove 9, lifting head 10, secondary furnace chamber 11, wireline 12, segregaion valve 13, chuck 14, quartz crucible 15, plumbago crucible 16, well heater 17, thermally-insulated body 18, electrode 19, crucible lifting rotating mechanism 20, Controlling System 21, lower furnace chamber 22, silicon melt 23, silicon single-crystal 24, diameter control probe 25.
Embodiment
Shown in Fig. 3,4, the crystal seed chuck that is used for Modelling of Crystal Growth in CZ-Si Pulling comprises hook 1, epimere 2, stage casing 3, hypomere 4, pin 5 from top to bottom in turn, and linking up with 1 top has a groove, and pinhole is left in the both sides of groove; Epimere 2 comprises right cylinder and the frustum of a cone that is connected, and total height a is 100-150mm, diameter d
1Be 50-70mm, the base angle of the frustum of a cone
1Be that 60 °-70 °, frustum of a cone height a ' are 5-10mm; Stage casing 3 is the frustum of a cone, and its height b is 40-50mm; Hypomere 4 comprises right cylinder and the frustum of a cone that is connected, and total height c is 100-150mm, diameter d
2Be 40-50mm, frustum of a cone base angle
2Be 60 °-70 °, frustum of a cone height c ' is 5-10mm, and the lower central of hypomere 4 is provided with the pickup groove 9 of crystal seed, the diameter d of pickup groove 9
6Be 12-13mm, bottom one side of hypomere 4 has pinhole 7, and pinhole 7 is the through hole of common key groove shape, and the radius of circle R at the two ends, cross section of pinhole 7 is 2.5-4mm, center of circle spacing h
1Be 1-5mm, the center of circle of the circular arc of the close jaw face in the cross section of pinhole 7 is 7-9mm from the distance of chuck axis; Pin 5 is housed in the pinhole 7, and pin 5 is the cylindrical of length 40-50mm, and pin 5 sides are provided with the plane that width e is 3-6mm, and the plane is parallel with pin 5 axis, the diameter d of pin 5
4Be 5-8mm, d
4=2R.
The material of described hook 1, epimere 2, stage casing 3, hypomere 4, pin 5 is High-Temperature Mo.
The pin 5 of described crystal seed chuck its width e when fixing crystal seed 6 is that the plane of 3-6mm is that face contacts with the fixed face 8 of crystal seed 6.
The pinhole 7 of described crystal seed chuck is the common key groove shape, can make the operator observe the fit-state of pin 5 and the contact position of the fixed face 8 of crystal seed 6 when crystal seed 6 is installed, and guarantees that pin 5 and the contact position of the fixed face 8 of crystal seed 6 are that width is the plane of e.
As shown in Figure 5, use Modelling of Crystal Growth in CZ-Si Pulling furnace structure synoptic diagram of the present utility model to comprise in turn from top to bottom lifting head 10, secondary furnace chamber 11, segregaion valve 13, diameter control probe 25, lower furnace chamber 22, electrode 19, crucible lifting rotating mechanism 20, in lower furnace chamber 22 the insides thermally-insulated body 18 is arranged in turn from outside to inside, well heater 17, plumbago crucible 16, quartz crucible 15, below lifting head 10, be hung with wireline 12, chuck 14 of the present utility model, the lower end of chuck 14 is fixed with crystal seed 6
Fill first polysilicon in quartz crucible 15 when using the utility model, vacuumize leak detection, adding power heats up, after polysilicon melts fully, computer control system 21 is stabilized to melt temperature in the scope of the above 10-30 C of melting temperature of silicon, lifting head 10 is transferred wireline 12, chuck 14 and crystal seed 6 are until crystal seed 6 and silicon melt 23 weldings, the temperature of Controlling System 21 control melts 23, pull rate, crucible lifting speed grows up silicon single-crystal to begin isodiametric growth behind aimed dia centered by crystal seed, silicon melt 23 in the silicon monocrystal growth process in the quartz crucible 15 constantly is transformed into silicon single-crystal 24 and consumes, the weight of silicon single-crystal 24 constantly increases, beginning crystal afterbody growth after surplus material reaches prescribed value, silicon single-crystal 24 broke away from remainder melt after the afterbody growth was finished, and crystal growing process finishes.
As shown in Figure 3, the pinhole 7 of common key groove shape can make the operator observe the fit-state of pin 5 and the contact position of the fixed face 8 of crystal seed 6 when crystal seed 6 is installed, and guarantees that pin 5 and the contact position of the fixed face 8 of crystal seed 6 are that width is the plane of e.As shown in Figure 4, crystal seed chuck 14 of the present utility model is fixedly during crystal seed, pin 5 is that width is the plane of e with the contact position of the fixed face 8 of crystal seed 6, this has reduced the pressure of contact position, improved the weight-carrying ability of crystal seed, when having reduced the growth large diameter silicon monocrystal crystal seed 6 with the chance of pin 5 contact positions fracture.
Use crystal seed chuck of the present utility model, the weight of the monocrystalline that crystal seed lifts can reach 300-400kg.
Claims (2)
1. crystal seed chuck that is used for Modelling of Crystal Growth in CZ-Si Pulling, it is characterized in that chuck comprises hook (1), epimere (2), stage casing (3), hypomere (4), pin (5) from top to bottom in turn, there is a groove on hook (1) top, and pinhole is left in the both sides of groove; Epimere (2) comprises right cylinder and the frustum of a cone that is connected, and total height a is 100-150mm, diameter d
1Be 50-70mm, the base angle of the frustum of a cone
1Be that 60 °-70 °, frustum of a cone height a ' are 5-10mm; Stage casing (3) is the frustum of a cone, and its height b is 40-50mm; Hypomere (4) comprises right cylinder and the frustum of a cone that is connected, and total height c is 100-150mm, diameter d
2Be 40-50mm, frustum of a cone base angle
2Be 60 °-70 °, frustum of a cone height c ' is 5-10mm, and the lower central of hypomere (4) is provided with the pickup groove (9) of crystal seed, the diameter d of pickup groove (9)
6Be 12-13mm, bottom one side of hypomere (4) has pinhole (7), and pinhole (7) is the through hole of common key groove shape, and the radius of circle R at the two ends, cross section of pinhole (7) is 2.5-4mm, center of circle spacing h
1Be 1-5mm, the center of circle of the circular arc of the close jaw face in the cross section of pinhole (7) is 7-9mm from the distance of chuck axis; Pin (5) is housed in the pinhole (7), and pin (5) is the cylindrical of length 40-50mm, and pin (5) side is provided with the plane that width e is 3-6mm, and the plane is parallel with pin (5) axis, the diameter d of pin (5)
4Be 5-8mm, d
4=2R.
2. a kind of crystal seed chuck for Modelling of Crystal Growth in CZ-Si Pulling according to claim 1 is characterized in that the material of described hook (1), epimere (2), stage casing (3), hypomere (4), pin (5) is High-Temperature Mo.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120543003 CN202658267U (en) | 2011-12-22 | 2011-12-22 | Seed chuck used for growth of czochralski silicon singlecrystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120543003 CN202658267U (en) | 2011-12-22 | 2011-12-22 | Seed chuck used for growth of czochralski silicon singlecrystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202658267U true CN202658267U (en) | 2013-01-09 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201120543003 Expired - Lifetime CN202658267U (en) | 2011-12-22 | 2011-12-22 | Seed chuck used for growth of czochralski silicon singlecrystal |
Country Status (1)
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|---|---|
| CN (1) | CN202658267U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102492983A (en) * | 2011-12-22 | 2012-06-13 | 浙江金瑞泓科技股份有限公司 | Seed chuck used for growth of czochralski silicon single-crystal |
| CN105780128A (en) * | 2014-12-23 | 2016-07-20 | 江苏拜尔特光电设备有限公司 | Improved heavy hammer for single crystal furnace |
| CN106048714A (en) * | 2016-07-11 | 2016-10-26 | 上海国晶和泰新材料科技有限公司 | Seed crystal connecting structure |
-
2011
- 2011-12-22 CN CN 201120543003 patent/CN202658267U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102492983A (en) * | 2011-12-22 | 2012-06-13 | 浙江金瑞泓科技股份有限公司 | Seed chuck used for growth of czochralski silicon single-crystal |
| CN105780128A (en) * | 2014-12-23 | 2016-07-20 | 江苏拜尔特光电设备有限公司 | Improved heavy hammer for single crystal furnace |
| CN106048714A (en) * | 2016-07-11 | 2016-10-26 | 上海国晶和泰新材料科技有限公司 | Seed crystal connecting structure |
| CN106048714B (en) * | 2016-07-11 | 2018-04-17 | 上海国晶和泰新材料科技有限公司 | A kind of seed crystal connection structure |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130109 |
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| CX01 | Expiry of patent term |