CN216919477U - Tool for doping monocrystalline silicon alloy - Google Patents
Tool for doping monocrystalline silicon alloy Download PDFInfo
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- CN216919477U CN216919477U CN202122974372.2U CN202122974372U CN216919477U CN 216919477 U CN216919477 U CN 216919477U CN 202122974372 U CN202122974372 U CN 202122974372U CN 216919477 U CN216919477 U CN 216919477U
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Abstract
The utility model provides a tool for monocrystalline silicon alloy doping, which comprises a hoisting piece, a connecting piece and a containing piece, wherein the hoisting piece is connected with one end of the connecting piece, and the other end of the connecting piece is movably connected with the containing piece, so that the containing piece can rotate relative to the connecting piece; the containing piece is provided with a first through hole and a second through hole, and the distance from the first through hole to the joint of the containing piece and the connecting piece is smaller than the distance from the second through hole to the joint of the containing piece and the connecting piece, so that when the tool is doped, silicon solution enters the containing piece from the first through hole and flows out from the second through hole along with dopant. The utility model has the advantages that the utility model can effectively save the time of doping, improve the utilization rate of effective time, improve the production capacity of silicon single crystal and synchronously and effectively reduce the cost of non-silicon production; the tool can be recycled, the investment is low, and the benefit is remarkable.
Description
Technical Field
The utility model belongs to the technical field of silicon single crystal growing and manufacturing, and particularly relates to a tool for monocrystalline silicon alloy doping.
Background
As is well known, a solar monocrystalline silicon wafer is divided into an N type monocrystalline silicon wafer and a P type monocrystalline silicon wafer and is used for manufacturing a solar cell, the doping element of the N type monocrystalline silicon wafer is a phosphorus element, and the cost of manufacturing the cell relative to the cost of manufacturing the P type monocrystalline silicon wafer in the actual production and manufacturing process is high, so that most enterprises on the market produce the P type monocrystalline silicon wafer for manufacturing the solar cell at present. The earliest doping element of the P-type monocrystalline silicon wafer is boron, but boron and monocrystalline internal oxygen can combine to generate a boron-oxygen complex, so that the boron-oxygen complex light attenuation (BO-LID) of the cell is caused, the BO-LID is also considered to be a main reason for the initial light attenuation of the monocrystalline cell at present, and the BO-LID influence degree is further shown after the crystalline silicon cell enters the PERC era. With the development and progress of the monocrystalline silicon manufacturing technology, one effective method for solving the LID is to use a gallium-doped silicon wafer, and after a boron atom is replaced by a gallium atom, the problem of boron-oxygen recombination is effectively solved, the light attenuation of a battery piece is almost inhibited, and the method has great development potential.
In the czochralski silicon production link, because the segregation coefficient of gallium is only 0.008, compare with the segregation coefficient of conventional boron 0.8 and differ by 100 times, lead to gallium at doping in-process concentration control difficulty, the monocrystalline silicon crystal head resistivity dispersion of producing is great, and the target resistance hit rate is lower, for guaranteeing the accurate control of resistivity, improves effective product income shelves rate, and partial enterprise can draw the sample piece measuring resistance before drawing monocrystalline silicon and carry out the element rescue resistance hit rate of gallium of supplementing.
The existing method for supplementing gallium element in monocrystalline silicon is to utilize seed crystals to perform power-down crystallization and sheet expansion on the silicon liquid surface, then to take out the crystal sheet out of a monocrystalline furnace, to put gallium particles on the crystal sheet, and to melt the crystal sheet and the gallium particles into silicon liquid through purification and high temperature, so that on one hand, the whole supplementing process takes 3-4 hours, the production rhythm is seriously lagged, and the benefit output is influenced; on the other hand, because the physical melting point of gallium is only 29.8 ℃, the gallium is easy to melt and run off in the process of crystal expansion doping, the whole doping cannot be ensured, and certain influence is generated on resistance control.
SUMMERY OF THE UTILITY MODEL
In view of the above problems, the present invention provides a tool for monocrystalline silicon alloy doping to solve the above or other former problems in the prior art.
In order to solve the technical problems, the utility model adopts the technical scheme that: a tool for monocrystalline silicon alloy doping comprises a hoisting piece, a connecting piece and a containing piece, wherein the hoisting piece is connected with one end of the connecting piece, and the other end of the connecting piece is movably connected with the containing piece, so that the containing piece can rotate relative to the connecting piece;
the containing piece is provided with a first through hole and a second through hole, and the distance from the first through hole to the joint of the containing piece and the connecting piece is smaller than the distance from the second through hole to the joint of the containing piece and the connecting piece, so that when the tool is doped, silicon solution enters the containing piece from the first through hole and flows out from the second through hole along with dopant.
Further, the splendid attire piece includes that first chamber and the second of holding hold the chamber, and first chamber and the second of holding holds the chamber and sets gradually along the length direction of the splendid attire piece, and first chamber and the second of holding hold the chamber and locate the both sides of first through-hole respectively, and first chamber and the second of holding hold the chamber intercommunication, and the second holds the chamber and is used for holding the dopant.
Furthermore, the second accommodating cavity is respectively communicated with the first through hole and the second through hole, so that when the tool is used for doping, the silicon solution enters from the first through hole and carries the dopant to flow out from the second through hole.
Furthermore, the containing part is provided with an opening which is communicated with the first containing cavity, so that the dopant enters the first containing cavity from the opening and enters the second containing cavity through the first containing cavity to be filled with the dopant.
Further, the axis of the first through hole intersects with the axis of the second through hole.
Further, the axis of the first through hole is intersected with the axis of the containing piece.
Further, the axis of the second through hole is parallel to the axis of the containing piece.
Furthermore, the number of the first through holes is at least two, and the first through holes are symmetrically arranged on the side wall of the containing part, or the first through holes are sequentially arranged along the circumferential direction of the side wall of the containing part.
Furthermore, the material of the containing piece is high-purity quartz.
Furthermore, the connecting piece is made of molybdenum.
By adopting the technical scheme, the tool for doping the alloy is provided with the hoisting piece, the tool can be hung in the auxiliary chamber by utilizing the hook of the re-feeder in the auxiliary chamber of the single crystal furnace, the equipment transformation cost is reduced, the tool is provided with the containing piece which can contain the dopant, meanwhile, the containing piece is provided with the first through hole and the second through hole, and a certain distance is reserved between the first through hole and the second through hole, so that when the tool is used for doping, the silicon solution can flow into the containing piece from the first through hole and flow out from the second through hole, and the dopant is doped; when the tool is used for doping, the temperature of the silicon solution is increased, so that a plugging block and a doping agent in the tool can be quickly melted, the doping time can be effectively saved, and the effective working time utilization rate is improved; the material of the containing part of the tool is high-purity quartz, the material of the connecting piece is molybdenum metal, no new impurity is introduced, the production capacity of silicon single crystals can be improved, and the production cost of non-silicon is synchronously and effectively reduced; the tool can be recycled, the investment is low, and the benefit is remarkable.
Drawings
Fig. 1 is a schematic structural diagram of an alloy doping tool according to an embodiment of the present invention.
In the figure:
1. hoisting part 2, connecting part 3 and containing part
4. Molybdenum bolt 5, doping agent 6 and plugging block
7. First through hole 8 and second through hole
Detailed Description
The utility model is further described with reference to the following figures and specific embodiments.
Fig. 1 shows a schematic structural diagram of an embodiment of the present invention, which relates to a tool for monocrystalline silicon alloy doping, and is used in a dopant doping process in a czochralski monocrystalline process, the tool for monocrystalline silicon alloy doping can be suspended in a sub-chamber and ascended and descended, the tool has a container, the container has a first through hole and a second through hole, the second through hole is sealed by a silicon material, the dopant is filled in a second accommodating cavity of the container, the container is contacted with a silicon solution and extends into the silicon solution during doping, the silicon material is melted, so that the silicon solution enters the container from the first through hole and flows out from the second through hole with the dopant for doping, thereby effectively saving the time for doping, increasing the production capacity of silicon monocrystalline, effectively reducing the production non-silicon cost, being recyclable, having low investment and remarkable benefits.
A tool for doping monocrystalline silicon alloy comprises a hoisting piece 1, a connecting piece 2 and a containing piece 3, wherein the hoisting piece 1 is connected with one end of the connecting piece 2, and the other end of the connecting piece 2 is movably connected with the containing piece 3, so that the containing piece 3 can rotate relative to the connecting piece 2, and a doping agent 5 can be conveniently filled; the hoisting piece 1 is used for being connected with a hook of a re-feeder so as to be convenient for hanging the tool in a secondary chamber of a single crystal furnace, and hanging the tool in the secondary chamber for doping the dopant 5 when the dopant 5 is needed to be doped in the process of pulling the single crystal; in order to facilitate connection of the hoisting piece 1 and the hook of the re-feeder, the hoisting piece 1 can be of a hook-shaped structure, so that the hoisting piece 1 is connected with the hook of the re-feeder, or the hoisting piece 1 is provided with a hole matched with the hook, so that the hoisting piece 1 can be connected with the hook, the structure of the hoisting piece 1 is selected according to actual requirements, no specific requirement is required here, in the embodiment, preferably, the hoisting piece 1 is a lifting ring, so that the hoisting piece 1 can be conveniently hung on the hook of the re-feeder, and the installation is convenient and rapid.
Because the alloy doping tool is used when being installed in a single crystal furnace for alloy doping, the material of the hoisting piece 1 can be stainless steel, metal molybdenum or other high-temperature resistant materials, and is selected according to actual requirements, and no specific requirements are made here.
In order to ensure that the connecting member 2 is not deformed and melted at a high temperature and has no adverse effect on the quality of the single crystal, the connecting member 2 is preferably made of molybdenum in the embodiment because the connecting member 2 is closer to the silicon solution when the dopant 5 is doped in the tool.
The connecting piece 2 is connected with the containing piece 3 through a bolt, so that the containing piece 3 can swing relative to the connecting piece 2, the dopant 5 is convenient to place in the containing piece 3, the connecting piece 2 and the containing piece 3 are also convenient to install, the bolt is preferably a molybdenum bolt 4, deformation and melting are avoided under the high-temperature condition, and the quality of a single crystal is not affected.
The containing part 3 is provided with a first through hole 7 and a second through hole 8, the distance from the first through hole 7 to the joint of the containing part 3 and the connecting piece 2 is less than the distance from the second through hole 8 to the joint of the containing part 3 and the connecting piece 2, so that when the tool is doped, silicon solution enters the containing part 3 from the first through hole 7 and carries the dopant 5 to flow out from the second through hole 8, and the dopant 5 can be placed in the containing part 3 for doping.
Foretell splendid attire piece 3 still includes that first chamber and the second of holding holds the chamber, and first chamber and the second of holding holds the chamber and sets gradually along the length direction who holds the piece 3, and first chamber and the second of holding holds the chamber and locate the both sides of first through-hole 7 respectively, and first chamber and the second of holding hold the chamber intercommunication, and the second holds the chamber and is used for holding dopant 5. This splendid attire piece 3 is the tubular construction, splendid attire dopant 5 is convenient for, be provided with first through-hole 7 on a section of thick bamboo lateral wall, first through-hole 7 is divided into the space in the tubular construction and is first held the chamber and the chamber is held to the second, first one side that holds the chamber and be located first through-hole 7, it holds the intracavity to get into the second when being convenient for fill dopant 5, the second holds the opposite side that the chamber is located first through-hole 7, be used for splendid attire dopant 5, first chamber and the second of holding hold the chamber intercommunication, dopant 5 of being convenient for gets into the second through the first chamber that holds and hold the intracavity.
The first chamber and the second chamber that holds set gradually along the one end of splendid attire piece 3 being connected with connecting piece 2 to other end direction, the second holds the chamber and communicates with first through-hole 7 and second through-hole 8 respectively, so that the frock is when mending, silicon solution gets into and carries dopant 5 from first through-hole 7 and flows out from second through-hole 8, the setting of first through-hole 7, when the frock of being convenient for is located silicon solution, silicon solution can get into in the splendid attire piece 3 from first through-hole 7, namely, silicon solution gets into in the splendid attire piece 3 and is located the second and holds the intracavity from first through-hole 7, the setting of second through-hole 8, silicon solution that is convenient for get into in the splendid attire piece 3 flows out from second through-hole 8, so that dopant 5 flows out from second through-hole 8 with silicon solution, realize doping of dopant 5.
The splendid attire piece 3 is equipped with an opening, the opening with first chamber intercommunication that holds to make dopant 5 get into first chamber and the intracavity is held to the second through first chamber that holds from the opening, promptly, this splendid attire piece 3 has open-ended section of thick bamboo structure for one end, so that the splendid attire piece 3 communicates with the external world through this opening, and then make first chamber and the external world intercommunication of holding, the setting of second through-hole 8, make the other end and the external world intercommunication of splendid attire piece 3, so that dopant 5 flows out in from splendid attire piece 3.
The axis of the first through hole 7 and the axis of the second through hole 8 may be arranged in parallel, for example, the first through hole 7 and the second through hole 8 are both arranged on the side wall of the container 3, and the second through hole 8 is located below the first through hole 7 (the container 3 is close to one end of the silicon solution when contacting with the silicon solution); or the axis of the first through hole 7 is intersected with the axis of the second through hole 8, the first through hole 7 is positioned on the side wall of the container 3, and the second through hole 8 is positioned at one end of the container 3, which is not provided with the connecting piece 2. The positions of the first through hole 7 and the second through hole 8 are set according to actual requirements, and no specific requirement is made here. In the present embodiment, it is preferable that the axis of the first through hole 7 intersects with the axis of the second through hole 8.
The axis of the first through hole 7 intersects with the axis of the containing part 3, in this embodiment, the first through hole 7 is disposed on the sidewall of the containing part 3, the first through hole 7 may be circular, square, rhombic, elliptical, or a rounded rectangle with a certain length, or other shapes, and is selected according to actual needs, where no specific requirements are made. Since first through-hole 7 is provided for the purpose of allowing the silicon solution to enter container 3, first through-hole 7 cannot be provided at the bottom of container 3 (provided that the end of container 3 where it meets the silicon solution is the bottom and the end where it connects to connecting member 2 is the top), preventing dopant 5 filled in container 3 from flowing out of first through-hole 7 and failing to be doped accurately. Therefore, the first through hole 7 and the second through hole 8 have a certain distance therebetween, which corresponds to the second receiving cavity, so as to receive the dopant 5.
The number of the first through holes 7 is at least two, and the first through holes 7 are symmetrically arranged on the side wall of the containing part 3, so that silicon solution can enter the containing part 3 from two sides of the containing part 3; or, the plurality of first through holes 7 are arranged along the circumferential direction of the side wall of the container 3, and the plurality of first through holes 7 may be arranged at equal intervals or at unequal intervals, and are selected according to actual requirements, where no specific requirement is made.
Second through-hole 8 can set up on the lateral wall of splendid attire piece 3, and this moment, second through-hole 8 is located the below of first through-hole 7, and perhaps, second through-hole 8 can set up in the bottom of splendid attire piece 3, and the setting position of second through-hole 8 is selected according to actual demand, does not do the specific requirement here, satisfies dopant 5 can be to silicon solution from the outflow of second through-hole 8.
The axis of second through-hole 8 is arranged parallel to the axis of container 3, and at this time, second through-hole 8 is arranged at the bottom of container 3.
The number of the second through holes 8 is at least one, and may also be a plurality of, when the number of the second through holes 8 is a plurality, the plurality of second through holes 8 are sequentially arranged along the circumferential direction of the container 3, and the number of the second through holes 8 is selected and arranged according to actual requirements, which is not specifically required here.
In this embodiment, the container 3 is of a cylindrical structure, and includes a first cylindrical body and a second cylindrical body connected to each other, one end of the first cylindrical body is connected to the connecting member 2, and the other end of the first cylindrical body is fixedly connected to the second cylindrical body, and the fixed connection is preferably formed integrally. The cross section of the first cylinder body can be round, square, oval or other shapes, the first cylinder body is selected according to actual requirements, no specific requirement is made here, and the space in the first cylinder body is a first accommodating cavity; first barrel is connected with the second barrel, is provided with first through-hole 7 in the junction of first barrel and second barrel, and the second barrel is used for splendid attire dopant 5, and the space in the second barrel holds the chamber for the second, for making dopant 5 can load in the second barrel, and can flow along with silicon solution fast, so, the shape of this second barrel is the cone, and the diameter of the one end diameter of being connected with first barrel is greater than the diameter of the other end, is equipped with second through-hole 8 in the less one end of diameter, makes dopant 5 flow out from second through-hole 8 along with silicon solution.
In the process of doping the dopant 5, the containing part 3 containing the dopant 5 is contacted with the silicon solution, so the material of the containing part 3 is quartz, preferably high-purity quartz, and the high-purity quartz can resist the high temperature of more than 1400 ℃, so that new impurities cannot be introduced in the process of doping the dopant 5, the tool can be repeatedly used, and the production cost is reduced.
When the tool for doping the monocrystalline silicon alloy is used, the plugging block 6 is filled in the containing piece 3, the plugging block 6 is located at the second through hole 8, and the size of the plugging block 6 is larger than that of the second through hole 8, so that the second through hole 8 can be plugged by the plugging block 6, and the plugging block 6 cannot leak out of the second through hole 8; after the plugging block 6 is placed, filling the dopant 5, placing the dopant 5 in the container 3, wherein the dopant 5 is located in the second containing cavity, and the dopant 5 cannot flow out of the second through hole 8 because the second through hole 8 is plugged by the plugging block 6, and the second containing cavity is located below the first through hole 7, so that the dopant 5 cannot flow out of the first through hole 7; the plugging block 6 is made of silicon material, and other impurities cannot be led out when the doping agent 5 is doped; the hoist and mount piece 1 is connected with the ware couple of throwing again in the auxiliary chamber, hang the frock in the single crystal growing furnace auxiliary chamber, descend the frock, make frock and silicon solution contact, and continue to descend, make the frock stretch into in the silicon solution, when the position of the first through-hole 7 of silicon solution and frock corresponds, stop descending, when the silicon solution gets into splendid attire piece 3 from first through-hole 7, shutoff piece 6 melts under the high temperature effect of silicon solution, promote the frock, silicon solution and dopant 5 in the splendid attire piece 3 flow out from second through-hole 8, dopant 5 gets into the silicon solution, mix.
A doping method for doping a dopant 5 by adopting the tool for monocrystalline silicon alloy doping comprises the following steps,
increasing the power of the heater, and improving the height from the guide cylinder to the liquid level of the silicon solution: before the doping of the doping agent 5, the temperature of the silicon solution is adjusted, so that when the tool is doped, the plugging block 6 in the tool can be quickly melted, and the position of the guide cylinder is adjusted, so that the liquid level of the silicon solution is prevented from boiling and splashing on the guide cylinder; specifically, in the step, the heater power is increased, the temperature of the silicon solution is raised, when the heater power is increased, a power variation is added on the basis of the fusion welding power, the fusion welding power is set before the doping of the dopant 5, the fusion welding power set in the process of pulling the single crystal is selected according to the actual setting of each furnace platform, the power variation is 10-30kw, the power variation can be 10kw, 20kw, 30kw or any power variation value between 10-30kw, the selection is carried out according to the actual requirement, and the heater power is increased to increase the temperature of the silicon solution without specific requirement;
the distance between the guide cylinder and the liquid level of the silicon solution is increased by a distance variable quantity on the basis of the position of the guide cylinder before doping, the guide cylinder is lifted on the basis of the position of the guide cylinder before doping, so that the distance between the guide cylinder and the liquid level of the silicon solution is increased, the distance variable quantity is increased on the basis of the position of the guide cylinder before doping, the distance variable quantity is 30-50mm, can be 30mm, 40mm or 50mm or any distance variable quantity value between 30-50mm, and is selected according to actual requirements, wherein the specific requirements are not made.
Suspending a tool for alloy doping; after the temperature of the silicon solution in the quartz crucible is adjusted, hanging the tool for alloy doping so as to carry out the subsequent doping process, wherein the step comprises the following steps:
filling a blocking block 6 in a second accommodating cavity of the tool to block the second through hole 8, wherein the blocking block 6 is a silicon material block, so that new impurities cannot be introduced in the doping process of the dopant 5, and the size of the blocking block 6 is larger than that of the second through hole 8 of the tool, so that the blocking block 6 can block the second through hole 8 and block the second through hole 8;
filling the dopant 5, filling the dopant 5 meeting the weight requirement into the tool according to the requirement of doping, wherein the dopant 5 is positioned in a second accommodating cavity of the tool, and the dopant 5 cannot flow out of the second through hole 8 because the second through hole 8 is blocked by the blocking block 6;
the tool filled with the dopant 5 is hung in the auxiliary chamber, the hoisting piece 1 of the tool is connected with the hook of the re-throwing device in the auxiliary chamber, the tool is hung in the auxiliary chamber, and the tool is lifted, so that the tool is located in the auxiliary chamber of the single crystal furnace and is away from the single crystal furnace for preheating the tool subsequently.
Descend the frock to preheat the frock at the in-process that descends: because the containing part 3 of the tool is made of quartz, the tool is not broken due to excessive temperature difference when the tool is in contact with the silicon solution in the quartz crucible, and therefore the tool needs to be preheated before the tool is in contact with the silicon solution for doping, the temperature difference between the tool and the silicon solution is reduced, the tool can adapt to the temperature of the silicon solution when in contact with the silicon solution, and the service life of the tool is prolonged; in the step, the tool is lowered at a first speed, the tool is lowered to a first position above the liquid level of the silicon solution, the silicon solution is kept for a period of time for preheating, the tool is preheated for the first time in the process of lowering the tool, the temperature of the tool is increased step by step, therefore, the tool is lowered at a slow speed in the process of lowering the tool at the first speed, the tool is fully preheated in the process of lowering the tool, wherein the first speed is 500 plus 700mm/min, and the tool is selectively set according to actual requirements and the position of the tool in the auxiliary chamber, and no specific requirement is made here;
when the tool is lowered to the first position above the liquid level of the silicon solution, the tool stays at the first position for a period of time to preheat for the second time, so that the temperature of the tool is close to the temperature of the silicon solution, wherein the first position is that the distance between the tool and the liquid level of the silicon solution is 20-30mm, the distance can be 20mm, 25mm, 30mm or any distance value between 20-30mm, the tool is selected according to actual requirements, no specific requirements are made here, the preheating time (namely the residence time) is 1-3min, the tool is selected and set according to the actual requirements, and no specific requirements are made here.
Detecting the liquid level temperature of the silicon solution: when the temperature of the tool is close to or equal to the temperature of the silicon solution, the liquid level temperature of the silicon solution is detected, the liquid level of the silicon solution is determined to reach the temperature capable of melting the plugging block 6 quickly, in the step, the liquid level temperature of the silicon solution is determined to be larger than 1460 ℃, after the temperature of the silicon solution is larger than 1460 ℃, the plugging block 6 can be melted quickly, doping of the dopant 5 can be carried out quickly, the doping supplementing working hours are shortened, and the utilization rate of effective working hours is improved.
Controlling the position of the tool to dope: when the temperature of the silicon solution reaches 1460 ℃ or higher, controlling the position of a tool to dope, wherein the step comprises the following steps:
descending the tool to enable the tool to be in contact with the silicon solution, and continuing to descend the tool until the liquid level of the silicon solution corresponds to the first through hole 7, preferably, the silicon solution does not exceed the upper side of the first through hole 7 (the side, close to the top of the container 3, of the first through hole 7), so that the silicon solution can flow into the tool from the first through hole 7, and the contact area between the tool and the silicon solution is reduced;
after the liquid level of the silicon solution corresponds to the position of the first through hole 7, the tool stays in the silicon solution for the first time, the silicon solution enters the tool in the first time, the plugging block 6 is melted at the same time, the first time is 30-120s, and the selection is carried out according to actual requirements, wherein no specific requirements are made;
after the plugging block 6 is melted, the tool is lifted, so that the doping agent 5 flows out of the second through hole 8 along with the silicon solution, the first through hole 7 is far away from the liquid level of the silicon solution in the lifting process of the tool, the silicon solution does not enter the tool any more, and the silicon solution carries the doping agent 5 to flow out of the second through hole 8, enters the silicon solution of the quartz crucible and is doped;
after the tool is completely lifted out of the silicon solution, judging whether the dopant 5 in the tool is remained, if so, descending the tool again, stopping the tool in the silicon solution for the first time, lifting the tool again, judging whether the dopant 5 in the tool is remained again, and if so, repeating the steps until the dopant 5 in the tool completely enters the silicon solution of the quartz crucible;
otherwise, if the dopant 5 does not remain in the tool, the tool is directly lifted into the auxiliary chamber, and the doping of the dopant 5 is completed.
Promote the frock to carry out slow cooling to the frock at the promotion in-process: promote the in-process to the auxiliary chamber at the frock, slowly cool down to the frock to make the temperature of frock progressively descend, be close the room temperature, so that the frock is dismantled, can not cause owing to the difference in temperature is too big and break, in this step, include:
and lifting the tool for a second time at a second speed to reduce the temperature of the tool: firstly, the temperature is raised at a lower speed so that the tool can be slowly cooled, the second speed is 300-500mm/hr, the second time is 1-2min, and the setting is selected according to actual requirements, wherein no specific requirements are made;
lifting the tool at a third speed for a third time, and lifting the tool into the auxiliary chamber: lifting at a higher speed, lifting the tool into a single crystal furnace auxiliary chamber, slowly cooling the tool twice, slowly reducing the temperature of the tool, wherein the third speed is 500-700mm/min, the third time is 3-5min, and selecting and setting are carried out according to actual requirements, wherein specific requirements are not required; the first lifting speed is smaller than the second lifting speed, and the tool is lifted at a low speed and then at a high speed in the lifting process.
After the tool is lifted into the auxiliary chamber of the single crystal furnace, the power of the heater is reduced, and the power of the heater is reduced to welding power, so that the temperature of the silicon solution reaches the temperature before doping, and the subsequent working procedures are facilitated;
taking out the tool, completing the doping, stabilizing the temperature, and continuing to pull the single crystal.
Compared with the existing doping process, the effective working hour in the existing process is 3-4 hours, the doping process of the embodiment has the effective working hour of 0.5 hour, and the utilization rate of the effective working hour is improved by 83 percent.
By adopting the technical scheme, the tool for doping the alloy is provided with the hoisting piece, the tool can be hung in the auxiliary chamber by utilizing the hook of the re-feeder in the auxiliary chamber of the single crystal furnace, the equipment transformation cost is reduced, the tool is provided with the containing piece which can contain the dopant, meanwhile, the containing piece is provided with the first through hole and the second through hole, and a certain distance is reserved between the first through hole and the second through hole, so that when the tool is used for doping, the silicon solution can flow into the containing piece from the first through hole and flow out from the second through hole, and the dopant is doped; when the tool is used for doping, the temperature of the silicon solution is increased, so that a plugging block and a doping agent in the tool can be quickly melted, the doping time can be effectively saved, the effective working time utilization rate is improved, the material of a containing piece of the tool is high-purity quartz, the material of a connecting piece is metal molybdenum, new impurities cannot be introduced, the production capacity of silicon single crystals can be improved, and the non-silicon production cost can be synchronously and effectively reduced; the tool can be recycled, the investment is low, and the benefit is remarkable.
The embodiments of the present invention have been described in detail, but the description is only for the preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. All equivalent changes and modifications made within the scope of the present invention shall fall within the scope of the present invention.
Claims (10)
1. The utility model provides a frock for monocrystalline silicon alloy is mended and is mixed which characterized in that: the lifting piece is connected with one end of the connecting piece, and the other end of the connecting piece is movably connected with the containing piece, so that the containing piece can rotate relative to the connecting piece;
the containing piece is provided with a first through hole and a second through hole, and the distance from the first through hole to the joint of the containing piece and the connecting piece is smaller than the distance from the second through hole to the joint of the containing piece and the connecting piece, so that when the tool is doped, a silicon solution enters the containing piece from the first through hole and flows out of the second through hole along with a dopant.
2. The tool for monocrystalline silicon alloy doping according to claim 1, characterized in that: the splendid attire piece includes that first chamber and the second of holding hold the chamber, first hold the chamber with the second holds the chamber along the length direction of the splendid attire piece sets gradually, just first hold the chamber with the second holds the chamber and locates respectively the both sides of first through-hole, first hold the chamber with the second holds the chamber intercommunication, the second holds the chamber and is used for holding the dopant.
3. The tool for monocrystalline silicon alloy doping according to claim 2, characterized in that: the second containing cavity is respectively communicated with the first through hole and the second through hole, so that when the tool is used for doping, silicon solution enters from the first through hole and carries a dopant to flow out from the second through hole.
4. The tool for monocrystalline silicon alloy doping according to claim 3, characterized in that: the container is provided with an opening, and the opening is communicated with the first accommodating cavity, so that the dopant enters the first accommodating cavity from the opening and enters the second accommodating cavity through the first accommodating cavity to be filled with the dopant.
5. The tool for monocrystalline silicon alloy doping according to any one of claims 1-4, characterized in that: the axis of the first through hole is intersected with the axis of the second through hole.
6. The tool for monocrystalline silicon alloy doping according to claim 5, characterized in that: the axis of the first through hole is intersected with the axis of the container.
7. The tool for monocrystalline silicon alloy doping according to claim 6, characterized in that: the axis of the second through hole is parallel to the axis of the container.
8. The tooling for monocrystalline silicon alloy doping according to any one of claims 1-4, 6 and 7, characterized in that: the number of the first through holes is at least two, and the first through holes are symmetrically arranged on the side wall of the containing piece, or the first through holes are sequentially arranged along the circumferential direction of the side wall of the containing piece.
9. The tool for monocrystalline silicon alloy doping according to claim 1, characterized in that: the material of the containing piece is high-purity quartz.
10. The tool for monocrystalline silicon alloy doping according to claim 9, wherein: the connecting piece is made of metal molybdenum.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023098580A1 (en) * | 2021-11-30 | 2023-06-08 | Tcl中环新能源科技股份有限公司 | Monocrystalline silicon alloy supplementary doping apparatus and supplementary doping method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023098580A1 (en) * | 2021-11-30 | 2023-06-08 | Tcl中环新能源科技股份有限公司 | Monocrystalline silicon alloy supplementary doping apparatus and supplementary doping method |
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