CN202297872U - Silicon-wafer diffusion furnace for solar cell - Google Patents
Silicon-wafer diffusion furnace for solar cell Download PDFInfo
- Publication number
- CN202297872U CN202297872U CN2011202188977U CN201120218897U CN202297872U CN 202297872 U CN202297872 U CN 202297872U CN 2011202188977 U CN2011202188977 U CN 2011202188977U CN 201120218897 U CN201120218897 U CN 201120218897U CN 202297872 U CN202297872 U CN 202297872U
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- Prior art keywords
- quartz boat
- silicon chip
- silicon
- heater
- solar cell
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Abstract
The utility model discloses a silicon-wafer diffusion furnace for a solar cell, wherein gas flow-homogenizing plates are fixed at the both ends of a quartz boat, the inlet of the quartz boat is disposed at one end of a furnace body, a gas inlet tube straight passing in the furnace body is disposed at the other end of the furnace body, and the gas inlet tube is over against the centres of the gas flow-homogenizing plates; a waste gas exhaust tube is disposed at the lower end of the quartz boat, and the outlet of the waste gas exhaust tube is disposed at the lower end of the gas inlet tube of the furnace body; and silicon wafers are divided into a plurality of groups, the silicon wafers of each group are orderly arrayed between the two gas flow-homogenizing plates of the quartz boat, and the silicon wafers of every group are arrayed on the quartz boat in a direction in which the surfaces of the silicon wafers are parallel to the gas inlet tube. The silicon-wafer diffusion furnace for a solar cell disclosed by the utility model enables diffusing gas to be uniformly distributed on the surface of every silicon wafer, and then efficiently improves the uniformity of square resistance on the surface of silicon wafer; and measurement indicates that the range of square resistance on the surface of silicon wafer is lower to less than 5 Ohm/square. Moreover, the quantity of silicon wafers installed on quartz boat is high, thus increasing the yield of product.
Description
Technical field
The utility model belongs to the manufacture of solar cells technical field, relates to a kind of silicon chip of solar cell diffusion furnace.
Background technology
The silicon chip of solar cell diffusion furnace that uses at present; As shown in Figure 1; Silicon chip 31 is installed on the quartz boat 21 with the direction perpendicular to gas flow; 12 blinkers need be respectively installed at the two ends of quartz boat, spare the influence to silicon chip 31 to alleviate inlet pipe 41 with gas flow and density unevenness near the escape pipe 51.Diffusion gas gets into body of heater 11 backs and flows with the mode perpendicular to silicon chip 31 surfaces; Because stopping and gas flow and the even influence of density unevenness of silicon chip 31 self, the back side that reaches silicon chip 31 and retaining are inhomogeneous at the surperficial diffusion gas of each silicon chip of its back 31, cause silicon chip 31 square resistance homogeneities relatively poor; The resistance of silicon chip 31 middle part sides is bigger than normal; And less than normal all around, the square resistance extreme differences on silicon chip 31 surface reach 10 Ω/more than the, greatly reduce the quality of silicon chip.And 12 blinkers that install at quartz boat 21 two ends influence the installation quantity of silicon chip 31, influence product production.
The utility model content
The purpose of the utility model is exactly to solve the problems referred to above that exist in the prior art; A kind of silicon chip of solar cell diffusion furnace is provided, adopts this diffusion furnace that silicon chip is carried out DIFFUSION TREATMENT, its diffusion gas is evenly distributed on silicon chip; Silicon chip surface square resistance good uniformity, extreme difference is little.
For realizing above-mentioned purpose, the technical solution of the utility model is: a kind of silicon chip of solar cell diffusion furnace comprises body of heater and quartz boat; The quartz boat two ends are fixed with the gas even flow plate, after quartz boat gets into body of heater, are positioned at the center of body of heater; Body of heater one end has the import of quartz boat, the other end have with body of heater in straight-through inlet pipe, inlet pipe is over against the center of gas even flow plate; There is the waste discharge tracheae quartz boat lower end, and body of heater inlet pipe lower end has the outlet of waste discharge tracheae; Silicon chip is divided into many groups, and each is organized between the two gas even flow plates that silicon chip is sequentially arranged in quartz boat, and every group of silicon chip all is arranged on the quartz boat with the direction that the surface is parallel to inlet pipe.
Above-mentioned described gas even flow plate is a flat board, has the tubaeform qi-emitting hole that is uniformly distributed with on the flat board, and tubaeform qi-emitting hole is big near the stomidium footpath of silicon chip.The qi-emitting hole of described gas even flow plate is along the Z-axis symmetry of quartz boat central position.
The utility model adopts the quartz boat both sides that the gas even flow plate is set and diffusion gas is parallel to silicon chip surface mobile mode; Solved diffusion gas owing to stopping of silicon chip self makes the diffusion gas of the silicon chip that arrives the silicon chip back side and back inhomogeneous; So that the relatively poor problem of side's resistance homogeneity; Make diffusion gas can be evenly distributed on every silicon chip surface; And then effectively improve the homogeneity of silicon chip surface square resistance, through measuring, the square resistance extreme difference of silicon chip surface can reach 5 Ω/below the.And the utility model employing quartz boat both sides are provided with gas even flow plate mode and come gas distribution, can remove blinker, make the silicon chip quantity of installing on the quartz boat many, have improved product production.
Description of drawings
Fig. 1 is the internal structure synoptic diagram of existing silicon chip of solar cell diffusion furnace.
Fig. 2 is the internal structure synoptic diagram of the utility model.
Fig. 3 is the gas even flow plate of diffusion furnace tube, quartz boat in the utility model and the positional structure synoptic diagram of silicon chip.
Embodiment
As shown in Figures 2 and 3, present embodiment comprises body of heater 1 and quartz boat 2.Quartz boat 2 two ends are fixed with gas even flow plate 6, and gas even flow plate 6 is flat boards, have the tubaeform qi-emitting hole that is uniformly distributed with on the flat board, and tubaeform qi-emitting hole is big near the stomidium footpath of silicon chip 3; The qi-emitting hole of described gas even flow plate 6 is along the Z-axis symmetry of quartz boat 2 central positions.After quartz boat 2 gets into body of heater 1, be positioned at the center of body of heater 1.Body of heater 1 one ends have the import of quartz boat 2, and the other end has the inlet pipe 4 that leads directly to body of heater 1, and inlet pipe 4 is over against the center of gas even flow plate 6.There is waste discharge tracheae 5 quartz boat 2 lower ends, and body of heater inlet pipe 4 lower ends have the outlet of waste discharge tracheae 5.Silicon chip 3 is divided into many groups, and each is organized silicon chip and is arranged in order between the two gas even flow plates 6 that are installed in quartz boat 2, and the direction that every group of silicon chip 3 all is parallel to inlet pipe 4 with the surface is arranged and is installed on the quartz boat 2.
Claims (3)
1. a silicon chip of solar cell diffusion furnace comprises body of heater and quartz boat; It is characterized in that: the quartz boat two ends are fixed with the gas even flow plate, after quartz boat gets into body of heater, are positioned at the center of body of heater; Body of heater one end has the import of quartz boat, the other end have with body of heater in straight-through inlet pipe, inlet pipe is over against the center of gas even flow plate; There is the waste discharge tracheae quartz boat lower end, and body of heater inlet pipe lower end has the outlet of waste discharge tracheae; Silicon chip is divided into many groups, and each is organized between the two gas even flow plates that silicon chip is sequentially arranged in quartz boat, and every group of silicon chip all is arranged on the quartz boat with the direction that the surface is parallel to inlet pipe.
2. silicon chip of solar cell diffusion furnace according to claim 1 is characterized in that: described gas even flow plate is a flat board, has the tubaeform qi-emitting hole that is uniformly distributed with on the flat board, and tubaeform qi-emitting hole is big near the stomidium footpath of silicon chip.
3. according to claim 2 silicon chip of solar cell diffusion furnace, it is characterized in that: the qi-emitting hole of described gas even flow plate is along the Z-axis symmetry of quartz boat central position.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202188977U CN202297872U (en) | 2011-06-27 | 2011-06-27 | Silicon-wafer diffusion furnace for solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202188977U CN202297872U (en) | 2011-06-27 | 2011-06-27 | Silicon-wafer diffusion furnace for solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202297872U true CN202297872U (en) | 2012-07-04 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011202188977U Expired - Lifetime CN202297872U (en) | 2011-06-27 | 2011-06-27 | Silicon-wafer diffusion furnace for solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202297872U (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103409803A (en) * | 2013-08-22 | 2013-11-27 | 天威新能源控股有限公司 | Flow homogenizing plate used for crystalline silicon diffusion and crystalline silicon diffusion technology furnace comprising same |
| CN103436967A (en) * | 2013-08-12 | 2013-12-11 | 英利集团有限公司 | Method for optimizing air flow distribution of tubular diffusion furnace of solar cell piece |
| CN104419909A (en) * | 2013-08-27 | 2015-03-18 | 茂迪(苏州)新能源有限公司 | Film-coated furnace tube |
| CN105839190A (en) * | 2016-05-12 | 2016-08-10 | 温州海旭科技有限公司 | High-temperature diffusion device |
| CN110440595A (en) * | 2019-09-05 | 2019-11-12 | 杨鸿苍 | Gas phase process furnace |
| CN115233186A (en) * | 2022-07-20 | 2022-10-25 | 无锡松煜科技有限公司 | Method for improving LPCVD surface coating process |
-
2011
- 2011-06-27 CN CN2011202188977U patent/CN202297872U/en not_active Expired - Lifetime
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103436967A (en) * | 2013-08-12 | 2013-12-11 | 英利集团有限公司 | Method for optimizing air flow distribution of tubular diffusion furnace of solar cell piece |
| CN103436967B (en) * | 2013-08-12 | 2015-09-30 | 英利集团有限公司 | A kind of method optimizing solar battery sheet tubular diffusion furnace air flow method |
| CN103409803A (en) * | 2013-08-22 | 2013-11-27 | 天威新能源控股有限公司 | Flow homogenizing plate used for crystalline silicon diffusion and crystalline silicon diffusion technology furnace comprising same |
| CN103409803B (en) * | 2013-08-22 | 2016-12-28 | 天威新能源控股有限公司 | Even flow plate and crystalline silicon diffusion technique stove thereof for crystalline silicon diffusion |
| CN104419909A (en) * | 2013-08-27 | 2015-03-18 | 茂迪(苏州)新能源有限公司 | Film-coated furnace tube |
| CN104419909B (en) * | 2013-08-27 | 2016-12-28 | 茂迪(苏州)新能源有限公司 | A kind of plated film boiler tube |
| CN105839190A (en) * | 2016-05-12 | 2016-08-10 | 温州海旭科技有限公司 | High-temperature diffusion device |
| CN105839190B (en) * | 2016-05-12 | 2018-07-06 | 温州海旭科技有限公司 | A kind of High temperature diffusion device |
| CN110440595A (en) * | 2019-09-05 | 2019-11-12 | 杨鸿苍 | Gas phase process furnace |
| CN115233186A (en) * | 2022-07-20 | 2022-10-25 | 无锡松煜科技有限公司 | Method for improving LPCVD surface coating process |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 074000 new industrial zone of Hebei, Gaobeidian Province, light green new energy Limited by Share Ltd Patentee after: Guangwei Green Energy Technology Co.,Ltd. Address before: 074000 new industrial zone of Hebei, Gaobeidian Province, light green new energy Limited by Share Ltd Patentee before: Lightway Green New Energy Co.,Ltd. |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20160714 Address after: 074000, Baoding City, Hebei province Gaobeidian City Road on the north side of the west side of prosperous street Patentee after: BAODING LIGHTWAY GREEN ENERGY TECHNOLOGY CO.,LTD. Address before: 074000 new industrial zone of Hebei, Gaobeidian Province, light green new energy Limited by Share Ltd Patentee before: Guangwei Green Energy Technology Co.,Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120704 |