CN206188931U - Diffusion furnace - Google Patents
Diffusion furnace Download PDFInfo
- Publication number
- CN206188931U CN206188931U CN201621076102.2U CN201621076102U CN206188931U CN 206188931 U CN206188931 U CN 206188931U CN 201621076102 U CN201621076102 U CN 201621076102U CN 206188931 U CN206188931 U CN 206188931U
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- Prior art keywords
- silicon chip
- blast pipe
- pipe
- diffusion furnace
- exhaust
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Abstract
The utility model discloses a diffusion furnace, including the furnace body, be provided with the quartz boat that is used for loading the silicon chip in the furnace body, the below of quartz boat is provided with the blast pipe of endcapped, the blast pipe including set up in the top of blast pipe and along a plurality of exhaust holes that the axial was arranged with set up in the exhaust side pipe of exhaust hole top, every exhaust hole all corresponds exhaust side pipe of intercommunication, still is provided with the exit that supply quartz boat business turn over furnace body on the furnace body, is provided with the furnace gate in the exit. The endcapped of blast pipe, it is gaseous to avoid the blast pipe to collect from the afterbody, influences the silicon chip flow direction of gas on every side, influences POCl3's concentration evenly distributed. The exhaust side pipe bottom that can compare to press close to the silicon chip is collected gaseously along near from the base of silicon chip, reduced the gas pressure of the base reason of silicon chip, increases the power of the gaseous downward flow between the silicon chip, increases gas flow between the silicon chip, reduces silicon chip surface POCl3 concentration difference, reduces the square resistance difference of silicon chip, improves the square resistance homogeneity.
Description
Technical field
The utility model is related to the technical field of solar battery sheet, more particularly to a kind of diffusion furnace.
Background technology
Solar cell is that one kind effectively absorbs solar radiant energy, and electric energy is converted optical energy into using photovoltaic effect
Device, when solar irradiation is in semiconductor P-N junction, form the new electronics pair of hole one, it is empty in the presence of P-N junction electric field
Cave flows to P areas by N areas, and electronics flows to N areas by P areas, and electric current is just formed after connecting circuit.Due to being using the photoproduction of various potential barriers
Solar energy is converted into volta effect the solid semiconductor device of electric energy, therefore is too also known as solar cell or photovoltaic cell
The significant components of positive energy cell array power-supply system.Solar cell mainly has crystal silicon battery, III-V semi-conductor cell, without electromechanics
Pond and organic battery etc., wherein crystal silicon solar batteries occupy market mainstream leading position.
In the manufacturing process of solar cell, the surface of silicon chip needs to be diffused PROCESS FOR TREATMENT in diffusion furnace, its master
Want it to utilize foreign atom to the method for semiconductor chip diffusion inside, change the conduction type of semiconductor chip surface layer, from
And P-N junction is formed, it is the main technique to form P-N junction.As shown in Figure 1 and shown in Fig. 2, it includes body of heater to existing diffusion furnace tube
1 ', the interior quartz boat 22 ' being provided with for reprinting silicon chip 21 ' of body of heater 1 ' sets shower 3 ', spray in the top of quartz boat 22 '
The bottom of shower pipe 3 ' is provided with spray apertures 31 ', and (Fig. 2 illustrates for the partial structurtes for looking up direction of shower 3 ' as shown in Figure 2
Figure), spray apertures 31 ' are typically divided to two rows the bottom for being distributed on shower 3 ', and the lower section of quartz boat 22 ' is provided with blast pipe 4 ', row
The end of tracheae 4 ' is exhaust outlet, the POCl of the spray of spray apertures 31 '3It is partly complete positioned at the surface of silicon chip 21 ' during by silicon chip 21 '
Into diffusion, remaining POCl3Discharged by blast pipe 4 '.When existing diffusion furnace carries out spray diffusion, the spray of shower 3 '
Hole 31 ' apart from silicon chip 21 ' apart from bigger than normal, the exhaust outlet of blast pipe 4 ' at fire door end or in furnace bottom, because the stop of silicon chip 21 ' is made
With the gas-flow resistance of the medium position of silicon chip 21 ' is bigger than edge airflow resistance so that the POCl of the near center location of silicon chip 21 '3
POCl of the concentration less than the adjacent edges of silicon chip 21 '3Concentration, cause diffusion after silicon chip 21 ' surface square resistance produce
Raw difference, the square resistance of the central area of silicon chip 21 ' is big, and the square resistance of fringe region is small, influences the surface of silicon chip 21 '
The uniformity of square resistance, reduces the performance of silicon chip 21 '.
Utility model content
The purpose of this utility model is to propose a kind of diffusion furnace, reduces the POCl of silicon chip surface3Concentration difference, improve
The uniformity and performance of the square resistance on the surface of silicon chip.
It is that, up to this purpose, the utility model uses following technical scheme：
A kind of diffusion furnace, including body of heater, are provided with the quartz boat for loading silicon chip in the body of heater, the quartz boat
Lower section is provided with the blast pipe of endcapped, and the blast pipe includes being arranged at the top of the blast pipe and arranges vertically
Multiple steam vents and the exhaust side for being arranged at the steam vent top and being connected with the steam vent are managed, and are also set up on the body of heater
There are the import and export that the body of heater is passed in and out for the quartz boat, fire door is provided with the import and export.
Wherein, the spacing between two adjacent steam vents is identical.
Wherein, one exhaust side pipe of each steam vent correspondence connection, the steam vent is circle hole shape, described
The other pipe of exhaust is hollow cylinder, the internal diameter of the aperture less than exhaust side pipe of the steam vent.
Wherein, the steam vent and exhaust side pipe are concentric.
Wherein, a diameter of 0.15mm-0.2mm of the steam vent, the internal diameter of exhaust side pipe is 4.2mm-4.6mm.
Wherein, the spacing between the adjacent other pipe of two exhausts is 0.1mm~0.15mm.
Wherein, two exhaust side pipes positioned at outer end are positioned at the outside of the placement region of the silicon chip.
Wherein, the length of exhaust side pipe is 5cm-8cm.
Wherein, the front end of the blast pipe is communicated with getter device.
Wherein, the blast pipe can be rotatable around its axis, and the front end of the blast pipe is provided with handle, in order to rotate
State blast pipe.
Beneficial effect：The utility model provides a kind of diffusion furnace, including body of heater, is provided with for loading in the body of heater
The quartz boat of silicon chip, is provided with the blast pipe of endcapped below the quartz boat, the blast pipe is described including being arranged at
The top of blast pipe and multiple steam vents for arranging vertically and the exhaust side pipe being arranged above the steam vent, described in each
Steam vent corresponds to the exhaust side pipe of connection one, is additionally provided with the body of heater and passes in and out the body of heater for the quartz boat
Import and export, fire door is provided with the import and export.The endcapped of blast pipe, it is to avoid POCl3Gather and arranged from the end of blast pipe
Go out, influence POCl3Even concentration distribution.The other pipe of exhaust can compare to press close to the bottom of silicon chip, near the feather edge of silicon chip
Gas is collected, the gas pressure of the feather edge of silicon chip is reduced, increases the power that the gas between silicon chip flows downward, increase silicon
Gas fluidity between piece, reduces silicon chip surface POCl3Concentration difference, reduces the square resistance difference of silicon chip, improves square resistance
Uniformity.
Brief description of the drawings
Fig. 1 is the structural representation of the diffusion furnace of prior art.
Fig. 2 is the partial structural diagram for looking up direction of the shower of prior art.
Fig. 3 is the structural representation of the diffusion furnace of embodiment of the present utility model 1.
Fig. 4 is the partial structural diagram of the overlook direction of the blast pipe of embodiment of the present utility model 1.
Fig. 5 is the partial structural diagram for looking up direction of the shower of embodiment of the present utility model 1.
Fig. 6 is the POCl of embodiment of the present utility model 13Diffusion schematic diagram in diffusion furnace.
Wherein：
1- bodies of heater, 21- silicon chips, 22- quartz boats, 3- showers, 31- spray apertures, the spray apertures of 311- first, 312- second sprays
Drench hole, 4- blast pipes, 41- steam vents, the other pipe of 42- exhausts, 5- getter devices, 6- handles, 1 '-body of heater, 21 '-silicon chip, 22 '-stone
Ying Zhou, 3 '-shower, 31 '-spray apertures, 4 '-blast pipe.
Specific embodiment
It is that the technical problem for solving the utility model, the technical scheme for using and the technique effect for reaching are clearer,
Further illustrate the technical solution of the utility model below in conjunction with the accompanying drawings and by specific embodiment.
Embodiment 1
Fig. 3-Fig. 6 is refer to, is present embodiments provided and is provided with for filling in a kind of diffusion furnace, including body of heater 1, body of heater 1
The quartz boat 22 of silicon chip 21 is carried, the lower section of quartz boat 22 is provided with the blast pipe 4 of endcapped, and blast pipe 4 includes the row of being arranged at
The top of tracheae 4 and the multiple steam vents 41 arranged vertically and the exhaust side pipe 42 for being arranged at the top of steam vent 41, each row
Stomata 41 corresponds to the connection other pipe 42 of one exhaust, and the import and export that body of heater 1 is passed in and out for quartz boat 22 are additionally provided with body of heater 1, enters
Fire door is provided with outlet.The endcapped of blast pipe 4, it is to avoid the other pipe 42 of exhaust collects gas in afterbody, around influence silicon chip
Gas flow, influence POCl3Even concentration distribution.The other pipe 42 of exhaust can compare to press close to the bottom of silicon chip 21, from silicon chip
Collect gas near 21 feather edge, reduce the gas pressure of the feather edge of silicon chip 21, increase gas between silicon chip 21 to
The power of lower flowing, increases gas fluidity between silicon chip 21, reduces the surface POCl of silicon chip 213Concentration difference, reduces silicon chip 21
Square resistance difference, improves square resistance uniformity.The other pipe 42 of exhaust needs high temperature resistant and corrosion-resistant, can be from materials such as quartz
Material makes.Fire door is used to close and open import and export, it is however generally that be arranged on front end or the side wall of body of heater 1, and seal close into
Outlet, it is to avoid the internal environment of body of heater 1 is connected with external environment condition in diffusion process.
In the present embodiment, the spacing between two adjacent steam vents 41 is identical, i.e., steam vent 41 is evenly arranged in exhaust
The top of pipe 4, is easy to processing.The other pipe 42 of exhaust and steam vent 41 are corresponded, and the other pipe 42 of exhaust is also uniformly arranged, and adjacent two
Spacing between the pipe 42 of individual exhaust side can be 0.1mm-0.15mm, and densely arranged exhaust side pipe 42 can further improve silicon
The uniformity of the air pressure of the bottom of piece 21 so that POCl3Concentration ratio in discharge is more uniform.Steam vent 41 can be disposed as
Circle hole shape, the other pipe 42 of exhaust is disposed as hollow cylinder, and the uniformity of the gas pressure of surrounding is more preferable, and the He of steam vent 41
The other pipe 42 of exhaust with one heart, can further put forward anticyclonic uniformity, and the aperture of steam vent 41 is less than the internal diameter of the other pipe 42 of exhaust,
A diameter of 0.15mm-0.2mm of the steam vent 41 of the present embodiment, the internal diameter of the other pipe 42 of exhaust is 4.2mm-4.6mm.Less row
The pressure at expulsion of stomata 41 is basically identical, and the pressure at expulsion difference between each axial arranged steam vent 41 of blast pipe 4 is not
Greatly, the uniformity of pressure at expulsion can be improved, exhaust coil pipe 42 and its surrounding are respectively formed a more uniform area of exhaust pressure ratio
Domain, the larger exhaust side pipe 42 of internal diameter can expand the uniform region of air pressure so that the bottom even exhaust of quartz boat 22.
As shown in figure 3, the other pipe 42 of two exhausts positioned at outer end is located at the outside of the placement region of silicon chip 21, i.e., along exhaust
Beyond the placement region of silicon chip 21, to ensure to be vented, that other pipe 42 formed is uniform at the two ends of the exhaust side pipe 42 of the arrangement of pipe 4
All silicon chips 21 that exhaust gas region can be covered on quartz boat 22, it is ensured that the performance of the silicon chip 21 in same quartz boat 22 is protected
Hold consistent.The length of the other pipe 42 of exhaust can be 5cm-8cm, can be adjusted according to actual conditions so that the end of the other pipe 42 of exhaust
Face relativelys close to the bottom of silicon chip 21.
The front end of the blast pipe 4 of the present embodiment is also communicated with getter device 5, and getter device 5 can be pumping blower fan etc., lead to
Crossing getter device 5 can adjust the flowing velocity of the gas in body of heater 1, adjust the speed of diffusion process.Because quartz boat 22 is needed
Body of heater 1 is passed in and out by other servicing units, quartz boat 22 is usually sent into body of heater 1 in the bottom of quartz boat 22, therefore,
Blast pipe 4 itself can not from the bottom surface of quartz boat 22 too close to, to leave certain space for servicing unit activity, and in order to obtain
The uniformity of air pressure is preferably vented, the other pipe 42 of exhaust can be closer from the bottom surface of silicon chip 21, so as to relatively close to quartz boat
22 bottom surface, therefore, blast pipe 4 can be by the way that the member supportings such as bearing are in support or are connected to body of heater 1 so that blast pipe 4 can
With rotatable around its axis, the front end of blast pipe 4 is provided with handle 6, is easy to rotate blast pipe 4.In the turnover of quartz boat 22
Cheng Zhong, by swing handle so that the exhaust side pipe 42 on blast pipe 4 rotates down certain angle, such as rotates 45-90 °, stays
Go out space and supply auxiliary device operation, body of heater 1 is entered in quartz boat 22, complete the operation into stove, after servicing unit exits body of heater 1,
It is rotated further by handle 6 so that the other pipe 42 of exhaust is erect upwards.Locking device is additionally provided with the position of handle 6, in the other pipe 42 of exhaust
When turning to suitable angle, blast pipe 4 is locked by locking device, keep the position of the other pipe 42 of exhaust.Locking device can be with
It is mechanism that clamp ring etc. is locked by frictional force.
In the diffusion furnace of the present embodiment, the surface of quartz boat 22 is additionally provided with shower 3, and the bottom of shower 3 is set
There are at least three groups spray apertures 31 being arranged side by side being parallel to each other, the shapes and sizes of same group of spray apertures 31 are identical, spray
Hole 31 includes two group of first spray apertures 311 and at least one set of second spray apertures 312 positioned at inner side positioned at outside, the second spray
The area in hole 312 is less than the area of the first spray apertures 311, and the position of the second spray apertures 312 is corresponding with the middle part of quartz boat 22.
Second spray apertures 312 are arranged on the region of the inner side of shower 3, with the central region of quartz boat 22 very close to can be effectively
Improve the POCl positioned at the medium position of silicon chip 213Concentration, and the second spray apertures 312 area less than the first spray apertures 311
Area, can avoid the POCl of the medium position of silicon chip 213Excessive concentration, beneficial to keeping and the POCl at the edge of silicon chip 213Concentration
Unanimously, the uniformity and performance of the square resistance on the surface of silicon chip 21 are improved.
In the present embodiment, the position of the second spray apertures 312 can be set with the position mutual dislocation of the first spray apertures 311,
So that the POCl of the spray of the second spray apertures 3123The POCl that preferably can be sprayed with the first spray apertures 3113Interact, enter one
Step replenishes the POCl of the gap of the first spray apertures 3113Concentration.Every group of spray apertures 31 can all to be evenly arranged, more preferably
Ground keeps the POCl on the surface of silicon chip 213Concentration uniformity.Every group of spray apertures 31 can be both configured to circular hole, be easy to manufacture,
And the POCl for spraying3Evenly.One group of first quantity of spray apertures 311 more than one group of second quantity of spray apertures 312, it is general and
Speech, the first spray apertures 311 can exceed the two ends of the second spray apertures 312, and the second spray apertures 312 are predominantly located at central region, to increase
The POCl of strong central region3Concentration.
Shower 3 can be cylinder, and every group of spray apertures 31 are along the axially arranged of shower 3, the second spray apertures 312
In the lowest part of shower 3, two group of first spray apertures 311 is symmetricly set in the both sides of the second spray apertures 312.Now, the second spray
Drench hole 312 and spray POCl vertically downward3, the first spray apertures 311 are then outside obliquely to spray, and can expand POCl3Injection model
Enclose, the injection demand of the quartz boat 22 in relatively wide region can be met with the smaller shower 3 of diameter.Quartz boat 22 it is relative
Two sides be symmetrical arranged relative to one group of second spray apertures 312 of lowest part, now the second spray apertures 312 are located at quartz boat
The surface at 22 middle part, directly affects the POCl at the middle part of silicon chip 213Concentration, and silicon chip 21 itself also on second spray
Drench hole 312 symmetrical, i.e., two sides of silicon chip 21 are symmetrical arranged relative to one group of second spray apertures 312 of lowest part, silicon chip 21
The performance on surface is more consistent.As a result of the shower of cylinder, POCl can be expanded3Spray regime, two group first sprays
Drenching the distance between hole 311 can be less than the width of quartz boat 22, it is only necessary to the shower 3 of small diameter.
Above content is only preferred embodiment of the present utility model, for one of ordinary skill in the art, according to this reality
With new thought, will change in specific embodiments and applications, this specification content should not be construed as
To limitation of the present utility model.
Claims (10)
1. is provided with for loading silicon chip (21) in a kind of diffusion furnace, it is characterised in that including body of heater (1), the body of heater (1)
Quartz boat (22), is provided with the blast pipe (4) of endcapped below the quartz boat (22), the blast pipe (4) is including setting
Multiple steam vents (41) for being placed in the top of the blast pipe (4) and arranging vertically and it is arranged at the steam vent (41) top
And exhaust side pipe (42) connected with the steam vent (41), it is additionally provided with the body of heater (1) and is entered for the quartz boat (22)
Go out the import and export of the body of heater (1), fire door is provided with the import and export.
2. diffusion furnace as claimed in claim 1, it is characterised in that the spacing phase between two adjacent steam vents (41)
Together.
3. diffusion furnace as claimed in claim 2, it is characterised in that each described steam vent (41) correspondence one described row of connection
Gas side pipe (42), the steam vent (41) is circle hole shape, and exhaust side pipe (42) is hollow cylinder, the exhaust
Internal diameter of the aperture in hole (41) less than exhaust side pipe (42).
4. diffusion furnace as claimed in claim 3, it is characterised in that the steam vent (41) and exhaust side pipe (42) are same
The heart.
5. diffusion furnace as claimed in claim 3, it is characterised in that a diameter of 0.15mm-0.2mm of the steam vent (41),
The internal diameter of exhaust side pipe (42) is 4.2mm-4.6mm.
6. diffusion furnace as claimed in claim 3, it is characterised in that the spacing between the adjacent other pipes of two exhausts is 0.1mm
~0.15mm.
7. diffusion furnace as claimed in claim 3, it is characterised in that two exhausts side pipe (42) positioned at outer end are positioned at institute
State the outside of the placement region of silicon chip (21).
8. diffusion furnace as claimed in claim 1, it is characterised in that the length of exhaust side pipe (42) is 5cm-8cm.
9. the diffusion furnace as described in claim any one of 1-8, it is characterised in that the front end of the blast pipe (4) is communicated with suction
Device of air (5).
10. the diffusion furnace as described in claim any one of 1-8, it is characterised in that the blast pipe (4) can turn around its axis
Dynamic, the front end of the blast pipe (4) is provided with handle (6), in order to rotate the blast pipe (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621076102.2U CN206188931U (en) | 2016-09-23 | 2016-09-23 | Diffusion furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621076102.2U CN206188931U (en) | 2016-09-23 | 2016-09-23 | Diffusion furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206188931U true CN206188931U (en) | 2017-05-24 |
Family
ID=58729733
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621076102.2U Expired - Fee Related CN206188931U (en) | 2016-09-23 | 2016-09-23 | Diffusion furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206188931U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110726037A (en) * | 2019-11-28 | 2020-01-24 | 无锡尚德太阳能电力有限公司 | Diffusion tube capable of preventing air inlet pipe from being corroded and broken |
| CN114381807A (en) * | 2020-10-22 | 2022-04-22 | 中国科学院微电子研究所 | Diffusion furnace |
| CN116504611A (en) * | 2023-06-28 | 2023-07-28 | 无锡松煜科技有限公司 | Boron diffusion equipment and application method thereof |
-
2016
- 2016-09-23 CN CN201621076102.2U patent/CN206188931U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110726037A (en) * | 2019-11-28 | 2020-01-24 | 无锡尚德太阳能电力有限公司 | Diffusion tube capable of preventing air inlet pipe from being corroded and broken |
| CN110726037B (en) * | 2019-11-28 | 2021-06-01 | 无锡尚德太阳能电力有限公司 | Diffusion tube capable of preventing air inlet pipe from being corroded and broken |
| CN114381807A (en) * | 2020-10-22 | 2022-04-22 | 中国科学院微电子研究所 | Diffusion furnace |
| CN116504611A (en) * | 2023-06-28 | 2023-07-28 | 无锡松煜科技有限公司 | Boron diffusion equipment and application method thereof |
| CN116504611B (en) * | 2023-06-28 | 2023-09-01 | 无锡松煜科技有限公司 | Boron diffusion equipment and application method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170524 Termination date: 20210923 |
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| CF01 | Termination of patent right due to non-payment of annual fee |