CN115233186A - Method for improving LPCVD surface coating process - Google Patents
Method for improving LPCVD surface coating process Download PDFInfo
- Publication number
- CN115233186A CN115233186A CN202210855914.0A CN202210855914A CN115233186A CN 115233186 A CN115233186 A CN 115233186A CN 202210855914 A CN202210855914 A CN 202210855914A CN 115233186 A CN115233186 A CN 115233186A
- Authority
- CN
- China
- Prior art keywords
- plate
- lpcvd
- boat support
- improving
- coating process
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000004518 low pressure chemical vapour deposition Methods 0.000 title claims abstract description 23
- 238000000576 coating method Methods 0.000 title claims abstract description 22
- 239000010453 quartz Substances 0.000 claims abstract description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- 239000010410 layer Substances 0.000 claims description 14
- 235000012431 wafers Nutrition 0.000 claims description 13
- 239000006185 dispersion Substances 0.000 claims description 7
- 239000002356 single layer Substances 0.000 claims description 6
- 210000003781 tooth socket Anatomy 0.000 claims description 4
- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical compound Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 abstract description 5
- 239000007888 film coating Substances 0.000 description 4
- 238000009501 film coating Methods 0.000 description 4
- 238000003780 insertion Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a method for improving LPCVD surface coating process, the gas inlet mode in the process cavity adopts the mode of simultaneously feeding gas in a furnace mouth and a furnace, and exhausting gas from the furnace tail, the process gas flows from the furnace mouth to the furnace tail, a boat support uniform flow plate, a grating plate and a quartz boat are sequentially placed on a quartz boat support, a plurality of small holes which are uniformly distributed in sequence are arranged on the boat support uniform flow plate, the grating plate is arranged on the inner side of the boat support uniform flow plate, and the boat support uniform flow plate and the grating plate are arranged at intervals. The invention can make the contact between the process gas flow and the silicon chip more uniform, simultaneously avoid the influence of gas circumfluence on the process and greatly improve the coating uniformity of the LPCVD surface.
Description
Technical Field
The invention relates to the technical field of photovoltaic cell manufacturing, in particular to a method for improving an LPCVD (low pressure chemical vapor deposition) surface coating process.
Background
Currently, silicon photovoltaic cells with silicon as a substrate are commonly used for solar photovoltaic cells, and include monocrystalline silicon, polycrystalline silicon and amorphous silicon photovoltaic cells. In the preparation process of the solar photovoltaic cell, the silicon wafer needs to be subjected to the procedures of texturing, diffusion, etching, film coating, printing and the like in sequence. For the film coating processes such as LPCVD (low pressure chemical vapor deposition), the traditional quartz boat insert mode is a transverse insert, and the process mode is a coating type air flow; the process of clad air flow has been perfected over a long period of time with accumulation and improvement. However, under the condition of the same caliber, the number of the silicon wafers placed in the way is low, and the furnace mouth space cannot be fully utilized. The novel quartz boat insert mode is a vertical insert, and the process mode is a cross-insertion type air flow; compared with the horizontal insert quartz boat, the vertical insert quartz boat has larger capacity under the same condition. The vertical insert quartz boat is placed in a manner that the penetrating air flow needs to be subjected to uniform flow treatment so as to realize a better surface coating process.
Disclosure of Invention
The applicant aims at the defects in the prior art and provides a method for improving the LPCVD surface coating process, so that the contact of process gas flow and a silicon wafer is more uniform, the influence of gas circumfluence on the process is avoided, and the uniformity of the LPCVD surface coating can be greatly improved.
The technical scheme adopted by the invention is as follows:
a method for improving the surface coating technology of LPCVD includes such steps as introducing gas from furnace mouth to furnace tail, exhausting gas from furnace tail, arranging a uniform flow plate with several holes, arranging grid plates, and arranging them at intervals.
As a further improvement of the above technical solution:
the quartz boat support comprises a front end plate, a rear end plate, a left side fence and a right side fence, wherein the front end plate and the rear end plate are located at two ends of the left side fence and the right side fence and are perpendicularly connected with the two side fences, boat support flow equalizing plates are correspondingly arranged at the front end plate and the rear end plate respectively, and the boat support flow equalizing plates are parallel to the directions of the front end plate and the rear end plate.
The small holes on the boat support uniform flow plate are round holes, rhombic holes or square holes, and the diameter of the small holes is 6-20mm when the small holes are round holes.
The boat support flow equalizing plates are single-layer flow equalizing plates or multi-layer flow equalizing plates arranged in parallel at intervals, and the distance between the multi-layer flow equalizing plates is 5-30mm.
The small holes distributed on the adjacent multi-layer uniform flow plates are completely staggered in the process air flow direction.
The distance between the boat support uniform flow plate and the first quartz boat close to the furnace opening is 150mm-300mm.
The grating plates are single-layer grating plates or double-layer grating plates arranged in parallel at intervals, connecting rods are arranged between the double-layer grating plates, and two sides of each grating plate are provided with extending supporting handles.
The grid plate is provided with a row of grid holes which are arranged at intervals, the grid holes adopt strip-shaped dispersion holes, and the direction of the dispersion holes is consistent with the placing direction of the silicon wafers.
The distance between the grating plate and the first quartz boat close to the furnace mouth is 10mm-60mm.
The quartz boat comprises a left side plate, a right side plate and a plurality of cross rods connecting the left side plate and the right side plate, the cross rods are divided into an upper row and a lower row, the cross rods are horizontally arranged or obliquely arranged with the horizontal direction, and the inclination angle theta is 2-10 degrees; the opposite surfaces of the upper cross bar and the lower cross bar are provided with continuous clamping grooves which are rectangular tooth sockets or ︺ -shaped grooves which are opened towards two sides.
The invention has the following beneficial effects:
the invention adopts quartz boats which are uniformly distributed and arranged, and boat support flow equalizing plates are arranged on two sides; a grating plate is arranged between the uniform flow plate and the first quartz boat at a position close to the furnace mouth, and strip-shaped dispersion holes are formed in the grating plate. The process gas passes through the flow equalizing plate and the grating plate, then is in more uniform contact with the silicon wafer, and finally is pumped out of the process cavity through the flow equalizing plate at the other end of the boat support. The contact between the process gas flow and the silicon wafer can be more uniform, the influence of gas circumfluence on the process is avoided, and the coating uniformity of the LPCVD surface can be greatly improved. The invention aims at the alternate air flow mode of the vertical insertion piece, can greatly improve the film thickness uniformity of the film coating on the surface of the whole tube silicon wafer, particularly the film coating uniformity of the surface of the silicon wafer of the first quartz boat, and avoids chromatic aberration.
Drawings
Fig. 1 is a front view of the present invention.
Fig. 2 is a top view of fig. 1.
Fig. 3 is a left side view of fig. 1.
Fig. 4 is a front view of a grid plate of the present invention.
Fig. 5 is a top view of fig. 4.
Fig. 6 is a left side view of fig. 4.
In the figure: 1. a quartz boat support; 2. the boat support flow equalizing plate; 3. a grid plate; 4. a quartz boat.
Detailed Description
The following describes embodiments of the present invention with reference to the drawings.
Referring to fig. 1 to 6, in the method for improving the LPCVD surface coating process of the present invention, the gas inlet mode in the process chamber adopts a mode of simultaneously gas inlet in the furnace mouth and the furnace and gas exhaust at the furnace tail, and the process gas flows from the furnace mouth to the furnace tail. The quartz boat holds in the palm and places boat support uniform flow board 2, grid plate 3 and quartz boat 4 on 1 in proper order, and quartz boat holds in the palm 1 and includes front end plate, rear end plate, left side fence, right side fence, and front end plate, rear end plate are located the both ends on left side fence and right side fence and are connected perpendicularly with two side fences, constitute a rectangular frame. The boat support uniform flow plates 2 are correspondingly arranged at the front end plate and the rear end plate respectively, and the boat support uniform flow plates 2 are parallel to the front end plate and the rear end plate and transversely arranged between the left side rail and the right side rail. The boat support uniform flow plate 2 is provided with a plurality of small holes which are uniformly distributed in sequence and are in the shape of round holes, rhombic holes or square holes. The diameter of the small hole is 6-20mm when the small hole is a round hole. The boat support flow equalizing plates 2 are single-layer flow equalizing plates or multi-layer flow equalizing plates arranged in parallel at intervals, and the distance between the multi-layer flow equalizing plates is 5-30mm. The small holes distributed on the adjacent multi-layer uniform flow plates are completely staggered in the process air flow direction.
The inner side of the boat support uniform flow plate 2 is provided with a grid plate 3, and the boat support uniform flow plate 2 and the grid plate 3 are arranged at intervals. The grating plates 3 adopt single-layer grating plates 3 or double-layer grating plates 3 arranged at intervals in parallel, and connecting rods are arranged between the double-layer grating plates 3. Two sides of the grating plate 3 are provided with extended supporting handles. The grid plate 3 is provided with a row of grid holes which are arranged at intervals, the grid holes are strip-shaped dispersion holes, the direction of the dispersion holes is consistent with the placing direction of the silicon wafers, and the grid holes are vertically arranged or obliquely arranged. A plurality of quartz boats 4 are arranged on the inner side of the grating plate 3, and silicon wafers are loaded on the quartz boats 4. The distance between the boat support uniform flow plate 2 and the first quartz boat 4 close to the furnace mouth is 150mm-300mm. The distance between the grating plate 3 and the first quartz boat 4 close to the furnace mouth is 10mm-60mm.
The quartz boat 4 comprises a left side plate, a right side plate and a plurality of cross rods connected with the left side plate and the right side plate, wherein the cross rods are divided into an upper row and a lower row and comprise a group of upper cross rods and a group of lower cross rods. Left side board and right side board adopt vertical setting, are equipped with the reference column on the lateral surface of left side board and right side board, and the reference column perpendicular to left side board transversely sets up with the right side board, and the reference column is preferably respectively two on left side board and the right side board.
As an implementation, the cross bar between the left side plate and the right side plate is arranged horizontally. The opposite surfaces of the upper cross rod and the lower cross rod are provided with continuous clamping grooves. The clamping grooves on the cross bars are rectangular tooth sockets or ︺ -shaped grooves with opening angles towards two sides. The clamping grooves on the upper cross rod and the lower cross rod correspond to each other and have the same distance, and the clamping grooves clamp two opposite sides of the silicon wafer respectively. When the silicon chip is placed, the silicon chip is in a vertical state and is vertical to the cross section of the furnace mouth, and the airflow flows across the surface of the silicon chip in a penetrating way. The quartz boat 4 is placed on the quartz boat support 1 through the left and right positioning columns, and the left side plate and the right side plate are positioned in two side fences of the quartz boat support 1. The number of the cross rods is preferably four, the four cross rods are parallel to each other to form a cuboid, and the four cross rods are respectively located on four edges of the cuboid. The four cross rods are vertically arranged or obliquely arranged with the horizontal direction.
As another implementation, the cross bar between the left side plate and the right side plate is arranged in an inclined mode with the horizontal direction, and the inclined angle theta is 2-10 degrees. The opposite surfaces of the upper cross rod and the lower cross rod are provided with continuous clamping grooves. The clamping grooves on the cross bars are rectangular tooth sockets or ︺ -shaped grooves with opening angles towards two sides. The clamping grooves on the upper cross rod and the lower cross rod correspond to each other and have the same distance, and the clamping grooves clamp two opposite sides of the silicon wafer respectively. When the silicon chip is placed, the silicon chip is in a vertical inclined state and is vertical to the cross section of the furnace mouth, and the airflow passes through the surface of the silicon chip in an alternating manner. The quartz boat 4 is placed on the quartz boat support 1 through the left and right positioning columns, and the left side plate and the right side plate are positioned in two side fences of the quartz boat support 1. The number of the cross rods is preferably four, the four cross rods are parallel to each other to form a cuboid, and the four cross rods are respectively located on four edges of the cuboid. The four cross rods are arranged vertically or obliquely with the horizontal direction.
The foregoing description is illustrative of the present invention and is not to be construed as limiting thereof, as the invention may be modified in any manner without departing from the spirit thereof.
Claims (10)
1. A method for improving the LPCVD surface coating process is characterized by comprising the following steps: the mode of admitting air in the process chamber adopts the fire door, admit air in the stove simultaneously, the mode that the stove tail bled, process gas flows from the fire door to the stove tail direction, place boat support flow homogenizing plate (2), grid plate (3) and quartz boat (4) on quartz boat support (1) in proper order, set up the aperture that a plurality of evenly arranged according to the order on the boat support flow homogenizing plate (2), set up grid plate (3) in boat support flow homogenizing plate (2) inboard, boat support flow homogenizing plate (2) and grid plate (3) interval setting.
2. The method for improving the coating process of LPCVD surface according to claim 1, characterized in that: the quartz boat support (1) comprises a front end plate, a rear end plate, a left side fence and a right side fence, wherein the front end plate and the rear end plate are located at two ends of the left side fence and the right side fence and are perpendicularly connected with the two side fences, the boat support flow equalizing plate (2) is correspondingly arranged at the front end plate and the rear end plate respectively, and the boat support flow equalizing plate (2) is parallel to the directions of the front end plate and the rear end plate.
3. The method for improving the LPCVD surface coating process according to claim 1, characterized in that: the small holes on the boat support uniform flow plate (2) are round holes, rhombic holes or square holes, and the diameter of the small holes is 6-20mm when the small holes are round holes.
4. The method for improving the LPCVD surface coating process according to claim 1, characterized in that: the boat support flow equalizing plates (2) are single-layer flow equalizing plates or multi-layer flow equalizing plates arranged in parallel at intervals, and the distance between the multi-layer flow equalizing plates is 5-30mm.
5. The method for improving the LPCVD surface coating process according to claim 4, characterized in that: the small holes distributed on the adjacent multilayer flow homogenizing plates are completely staggered in the process air flow direction.
6. The method for improving the LPCVD surface coating process according to claim 1, characterized in that: the distance between the boat support uniform flow plate (2) and the first quartz boat (4) close to the furnace opening is 150mm-300mm.
7. The method for improving the LPCVD surface coating process according to claim 1, characterized in that: the grating plates (3) adopt single-layer grating plates (3) or double-layer grating plates (3) arranged at intervals in parallel, connecting rods are arranged between the double-layer grating plates (3), and two sides of each grating plate (3) are provided with extending supporting handles.
8. The method for improving the LPCVD surface coating process according to claim 1, characterized in that: the grid plate (3) is provided with a row of grid holes which are arranged at intervals, the grid holes adopt strip-shaped dispersion holes, and the direction of the dispersion holes is consistent with the placing direction of the silicon wafers.
9. The method for improving the coating process of LPCVD surface according to claim 1, characterized in that: the distance between the grating plate (3) and the first quartz boat (4) close to the furnace mouth is 10mm-60mm.
10. The method for improving the LPCVD surface coating process according to claim 1, characterized in that: the quartz boat (4) comprises a left side plate, a right side plate and a plurality of cross rods connecting the left side plate and the right side plate, the cross rods are divided into an upper row and a lower row, the cross rods are horizontally arranged or obliquely arranged with the horizontal direction, and the inclination angle theta is 2-10 degrees; the opposite surfaces of the upper cross bar and the lower cross bar are provided with continuous clamping grooves which are rectangular tooth sockets or ︺ -shaped grooves which are opened towards two sides.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210855914.0A CN115233186A (en) | 2022-07-20 | 2022-07-20 | Method for improving LPCVD surface coating process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210855914.0A CN115233186A (en) | 2022-07-20 | 2022-07-20 | Method for improving LPCVD surface coating process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115233186A true CN115233186A (en) | 2022-10-25 |
Family
ID=83674001
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210855914.0A Pending CN115233186A (en) | 2022-07-20 | 2022-07-20 | Method for improving LPCVD surface coating process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115233186A (en) |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202297872U (en) * | 2011-06-27 | 2012-07-04 | 光为绿色新能源股份有限公司 | Silicon-wafer diffusion furnace for solar cell |
| CN202695516U (en) * | 2012-07-02 | 2013-01-23 | 中节能太阳能科技有限公司 | Flow-equalizing block piece |
| CN105839190A (en) * | 2016-05-12 | 2016-08-10 | 温州海旭科技有限公司 | High-temperature diffusion device |
| CN211929454U (en) * | 2020-06-19 | 2020-11-13 | 无锡松煜科技有限公司 | Slide boat in photovoltaic cell process furnace |
| CN212610988U (en) * | 2020-06-03 | 2021-02-26 | 通威太阳能(眉山)有限公司 | Quartz boat, quartz boat assembly and diffusion furnace |
| CN113151806A (en) * | 2021-04-26 | 2021-07-23 | 中南大学 | Air inlet device of low-pressure chemical vapor deposition furnace |
| CN215451451U (en) * | 2021-09-15 | 2022-01-07 | 无锡松煜科技有限公司 | Aluminum boat grid assembly structure |
| CN215896428U (en) * | 2021-09-15 | 2022-02-22 | 无锡松煜科技有限公司 | Novel inclined quartz boat |
| WO2022052195A1 (en) * | 2020-09-09 | 2022-03-17 | 湖州奥博石英科技有限公司 | Solar cell silicon wafer diffusion insertion process |
| CN114551638A (en) * | 2022-01-21 | 2022-05-27 | 无锡松煜科技有限公司 | Quartz boat sheet inserting method and sheet taking method |
-
2022
- 2022-07-20 CN CN202210855914.0A patent/CN115233186A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202297872U (en) * | 2011-06-27 | 2012-07-04 | 光为绿色新能源股份有限公司 | Silicon-wafer diffusion furnace for solar cell |
| CN202695516U (en) * | 2012-07-02 | 2013-01-23 | 中节能太阳能科技有限公司 | Flow-equalizing block piece |
| CN105839190A (en) * | 2016-05-12 | 2016-08-10 | 温州海旭科技有限公司 | High-temperature diffusion device |
| CN212610988U (en) * | 2020-06-03 | 2021-02-26 | 通威太阳能(眉山)有限公司 | Quartz boat, quartz boat assembly and diffusion furnace |
| CN211929454U (en) * | 2020-06-19 | 2020-11-13 | 无锡松煜科技有限公司 | Slide boat in photovoltaic cell process furnace |
| WO2022052195A1 (en) * | 2020-09-09 | 2022-03-17 | 湖州奥博石英科技有限公司 | Solar cell silicon wafer diffusion insertion process |
| CN113151806A (en) * | 2021-04-26 | 2021-07-23 | 中南大学 | Air inlet device of low-pressure chemical vapor deposition furnace |
| CN215451451U (en) * | 2021-09-15 | 2022-01-07 | 无锡松煜科技有限公司 | Aluminum boat grid assembly structure |
| CN215896428U (en) * | 2021-09-15 | 2022-02-22 | 无锡松煜科技有限公司 | Novel inclined quartz boat |
| CN114551638A (en) * | 2022-01-21 | 2022-05-27 | 无锡松煜科技有限公司 | Quartz boat sheet inserting method and sheet taking method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8338210B2 (en) | Method for processing solar cell substrates | |
| CN211929454U (en) | Slide boat in photovoltaic cell process furnace | |
| WO2022000931A1 (en) | Graphite boat | |
| CN214753675U (en) | Novel quartz boat | |
| CN115233186A (en) | Method for improving LPCVD surface coating process | |
| JP2001102306A (en) | Tube for chemical vaporization | |
| CN215896428U (en) | Novel inclined quartz boat | |
| CN218975409U (en) | Quartz boat and diffusion furnace | |
| KR101508752B1 (en) | Heat Treatment Chamber of Substrate with Easy Maintenance, and Heat Treatment Apparatus and Method of Substrate Having the Same | |
| CN115274924A (en) | Method for improving uniformity and stability of diffusion sheet resistance | |
| CN215451451U (en) | Aluminum boat grid assembly structure | |
| CN113257725B (en) | Semiconductor wafer box with cleaning function | |
| CN107316831B (en) | Quartz boat and solar cell diffusion process | |
| CN114551638A (en) | Quartz boat sheet inserting method and sheet taking method | |
| CN219303623U (en) | Novel boron expands quartz boat and bears boat support of quartz boat | |
| US11562920B2 (en) | Semi-conductor wafers longer than industry standard square | |
| CN210607207U (en) | Diffusion quartz boat | |
| CN213459672U (en) | Quartz boat | |
| CN205177803U (en) | Graphite boat | |
| CN103290483B (en) | A kind of wafer heat reaction tubes and silicon wafer heat treatment method | |
| CN107641799B (en) | Tubular PERC battery graphite boat capable of improving EL corner blackening and stuck point blackening | |
| CN210261986U (en) | Tubular PERC battery graphite boat for improving EL edge blackening and stuck point blackening | |
| CN211929453U (en) | Graphite boat for photovoltaic cell | |
| CN218932300U (en) | Vapor deposition product supporting device and deposition system | |
| CN220284291U (en) | Diffusion furnace |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |