CN202247012U - Sapphire crystal growth device - Google Patents
Sapphire crystal growth device Download PDFInfo
- Publication number
- CN202247012U CN202247012U CN2011203456836U CN201120345683U CN202247012U CN 202247012 U CN202247012 U CN 202247012U CN 2011203456836 U CN2011203456836 U CN 2011203456836U CN 201120345683 U CN201120345683 U CN 201120345683U CN 202247012 U CN202247012 U CN 202247012U
- Authority
- CN
- China
- Prior art keywords
- crucible
- crystal
- seed crystal
- seed
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model discloses a sapphire crystal growth device, which comprises a crucible installed at the upper end of a crucible shaft. A heater is arranged on the periphery of the crucible, a seed crystal rod is arranged on the crucible, and the lower end of the seed crystal rod is connected with seed crystal. The crucible, the heater, the seed crystal and the seed crystal rod are all located in a vacuum chamber provided with a vacuumizing device, the crucible shaft is provided with a set of moving device for vertical movement and a set of transmission device for transmission, the seed crystal rod is also provided with a set of moving device for vertical movement and a set of transmission device for transmission, and the moving devices, the transmission devices, the heater and the vacuumizing device are all connected with a controller. The sapphire crystal growth device can ensure the evenness and symmetry of temperature in the growth environment, the growth effect of the crystal is good, and growing quality of the crystal is obviously improved.
Description
Technical field
The utility model belongs to crystal growth control techniques field, is specifically related to a kind of sapphire crystal growth device.
Background technology
In the sapphire crystal growth technology, generally keeping under the actionless situation of crucible, adopt crystal to lift simultaneously and the method that rotatablely moves is controlled and accomplished the crystalline growth.But, under the prior art condition, because heating system and heat-insulation system can not satisfy factors such as technical requirements fully because of making precision, installation site; Therefore; Generally speaking, can not well guarantee the even, symmetrical of temperature field in the crystal pulling process, thereby influence the crystalline stable growth.
Summary of the invention
The purpose of the utility model provides a kind of sapphire crystal growth device; Solved and kept under the actionless situation of crucible in the prior art; The method that adopts crystal to lift simultaneously and rotatablely move is controlled and is accomplished the crystalline growth, has inhomogeneous, the asymmetric problem in temperature field.
The technical scheme that the utility model adopted is, a kind of sapphire crystal growth device comprises the crucible that is installed in the crucible shaft upper end, is provided with well heater around the crucible, and the crucible top is provided with seed rod, and the lower end of seed rod is connected with seed crystal; Crucible, well heater, seed crystal, seed rod all are in the Vakuumkammer; Vakuumkammer is provided with vacuum extractor; Be provided with the transmission mechanism that the cover running gear that is used to move up and down and a cover are used to rotate to crucible shaft; Be provided with the transmission mechanism that running gear that a cover is used to move up and down and a cover are used to rotate equally for seed rod, all running gears, transmission mechanism, well heater, vacuum extractor all are connected with unit.
The beneficial effect of the utility model is, does rotatablely moving of equidirectional through the control seed rod with crucible shaft, guarantees homogeneity, the symmetry of temperature in the growing environment, and the perfection that helps sapphire crystal is grown; This method is simple to operate, and the crystalline growth result is good, and the quality of growing crystal is improved significantly.
Description of drawings
Fig. 1 is the apparatus structure synoptic diagram of the utility model.
Among the figure, 1. crucible shaft, 2. Vakuumkammer, 3. crucible, 4. polycrystal raw material, 5. well heater, 6. sapphire crystal, 7. seed crystal, 8. seed rod.
Embodiment
Below in conjunction with accompanying drawing and embodiment the utility model is elaborated.
Like Fig. 1, the apparatus structure that the utility model method is relied on is, comprises the crucible 3 that is installed in crucible shaft 1 upper end, is provided with well heater 5 around the crucible 3, and crucible 3 tops are provided with seed rod 8, and the lower end of seed rod 8 is connected with seed crystal 7; Crucible 3, well heater 5, seed crystal 7, seed rod 8 all are in the Vakuumkammer 2; Crucible shaft 1 is connected with the transmission mechanism that a cover is used to rotate with the running gear that a cover is used to move up and down simultaneously; Be used to realize moving up and down and rotating of crucible shaft 1; Seed rod 8 is connected with the transmission mechanism that a cover is used to rotate with the running gear that a cover is used to move up and down simultaneously; Be used to realize moving up and down and rotating of seed rod 8, all running gears, transmission mechanism all are connected with unit, accept unified control.
Among Fig. 1, the polycrystal raw material 4 through well heater 5 heat fused is housed in the crucible 3, the growth of sapphire crystal 6 is carried out in the guiding of the seed crystal 7 through being installed in seed rod 8; The polycrystal raw material 4 of crucible 3, well heater 5, heat fused, seed crystal 7, sapphire crystal 6 all are in the Vakuumkammer 2.
The working process of the utility model device is 1) pass through well heater 5 earlier with 4 heat fused of the polycrystal raw material in the crucible 3; 2) then Vakuumkammer 2 is vacuumized, make polycrystal raw material 4, seed crystal 7, the sapphire crystal 6 of crucible 3, well heater 5, heat fused all be in vacuum state; 3) do rotatablely moving of equidirectional through unit control seed rod 8 with crucible shaft 1 again; Make crucible 3 cooperate the seed crystal 7 on the seed rod 8 to carry out crystal pulling; Counterclockwise all can clockwise or simultaneously simultaneously; Guarantee the homogeneity of temperature in the growing environment, help the perfection growth of sapphire crystal, realize the growth of sapphire crystal.
The sapphire crystal growth device of the utility model is done rotatablely moving of equidirectional through control seed rod and crucible shaft, guarantees the homogeneity of temperature in the growing environment, helps the perfection growth of sapphire crystal; The utility model method is operated easily, and result of use is obvious, can be widely used in sapphire crystal growth system, laser crystal growth system and other crystal growth system.
Claims (1)
1. sapphire crystal growth device is characterized in that: comprise the crucible (3) that is installed in crucible shaft (1) upper end, crucible (3) is provided with well heater (5) on every side, and crucible (3) top is provided with seed rod (8), and the lower end of seed rod (8) is connected with seed crystal (7); Crucible (3), well heater (5), seed crystal (7), seed rod (8) all are in the Vakuumkammer (2); Vakuumkammer (2) is provided with vacuum extractor; Be provided with the transmission mechanism that running gear that a cover is used to move up and down and a cover are used to rotate for crucible shaft (1); Be provided with the transmission mechanism that running gear that a cover is used to move up and down and a cover are used to rotate equally for seed rod (8), all running gears, transmission mechanism, well heater (5), vacuum extractor all are connected with unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203456836U CN202247012U (en) | 2011-09-15 | 2011-09-15 | Sapphire crystal growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203456836U CN202247012U (en) | 2011-09-15 | 2011-09-15 | Sapphire crystal growth device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202247012U true CN202247012U (en) | 2012-05-30 |
Family
ID=46108282
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011203456836U Expired - Fee Related CN202247012U (en) | 2011-09-15 | 2011-09-15 | Sapphire crystal growth device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202247012U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107142520A (en) * | 2017-05-17 | 2017-09-08 | 中国科学院电工研究所 | One kind control silicon carbide monocrystal growth device |
-
2011
- 2011-09-15 CN CN2011203456836U patent/CN202247012U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107142520A (en) * | 2017-05-17 | 2017-09-08 | 中国科学院电工研究所 | One kind control silicon carbide monocrystal growth device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103147121B (en) | The device of lift kyropoulos growing crystal | |
| CN102877120B (en) | Automatic seeding technique for growing sapphire crystal by Kyropoulos method | |
| CN203569234U (en) | Seed crystal rotating lift mechanism for sapphire furnace | |
| CN204251762U (en) | A kind of thermal field structure of single crystal furnace | |
| CN102864496A (en) | Device for growing tellurium-zinc-cadmium crystals by traveling heater method | |
| CN109023525A (en) | A kind of moveable sapphire crystal growing furnace of pedestal | |
| CN101760781A (en) | Multifunctional crystal growth system of modular design | |
| CN202247012U (en) | Sapphire crystal growth device | |
| CN204251771U (en) | A kind of sapphire crystal growth device | |
| CN103361727A (en) | Sapphire single crystal and making method thereof | |
| CN104264213A (en) | EFG (edge-defined film-fed growth) device of large-size doped sapphire crystals and growth process thereof | |
| CN203530480U (en) | Equipment for growing sapphire single crystals | |
| CN103422163A (en) | Device and method for growing sapphire single crystals | |
| CN203960392U (en) | The equipment of direct growth sapphire dome | |
| CN203080106U (en) | Clamping tool for sapphire growth crucible | |
| CN103590109B (en) | Czochralski crystal growing furnace magnetic field device and use the crystal pulling method of this magnetic field device | |
| CN102345164A (en) | Efficient preparation method of silicon cores and silicon core preparation furnace | |
| CN205856655U (en) | A kind of single-crystal silicon carbide stove | |
| CN202202013U (en) | Externally continuous feeding mechanism for single crystal furnace | |
| CN205313716U (en) | Independent rotary mechanism of crucible in siC growth of single crystal equipment | |
| CN102286782A (en) | Sapphire crystal growth method | |
| CN104120487A (en) | Growth method and growth equipment of platelike sapphire crystals | |
| CN104088012B (en) | A kind of equipment of direct growth sapphire dome | |
| CN202492613U (en) | Czochralski growing method for sapphire single crystals | |
| CN102839414A (en) | Mono-crystalline silicon furnace continuous feeding device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120530 Termination date: 20180915 |