CN202218152U - IGBT (Insulated Gate Bipolar Transistor) heat-radiation structure of photovoltaic inverter - Google Patents
IGBT (Insulated Gate Bipolar Transistor) heat-radiation structure of photovoltaic inverter Download PDFInfo
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- CN202218152U CN202218152U CN 201120373151 CN201120373151U CN202218152U CN 202218152 U CN202218152 U CN 202218152U CN 201120373151 CN201120373151 CN 201120373151 CN 201120373151 U CN201120373151 U CN 201120373151U CN 202218152 U CN202218152 U CN 202218152U
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- igbt
- copper billet
- pcb board
- photovoltaic
- heat
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/56—Power conversion systems, e.g. maximum power point trackers
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- Photovoltaic Devices (AREA)
Abstract
The utility model relates to a power element and a circuit board heat radiating structure of the power element, in particular to an IGBT (Insulated Gate Bipolar Transistor) heat-radiation structure of a photovoltaic inverter. The IGBT heat-radiation structure of the photovoltaic inverter comprises an IGBT power element and a PCB (Printed Circuit Board). The IGBT power element utilizes a patch-type IGBT, the patch-type IGBT is welded on the PCB, in basis of the characteristic of a source electrode of the IGBT power element requiring connection, the position of the source electrode of the IGBT power element corresponding to the PCB is designed to be a corresponding square hole, a copper block with the size corresponding to the size of the square hole is embedded in the square hole, the source electrode of the IGBT power element is connected with the copper block, and the other surface of the copper block is tightly connected with a heat radiator. The IGBT heat-radiation structure of the photovoltaic inverter disclosed by the utility model takes consideration on the heat radiation efficiency of IGBT and the design cost of the PCB circuit, has the advantages of improvement on the heat radiation efficiency of the IGBT by the copper block embedded between the IGBT source electrode and a shell heat radiator, helpfulness on simplification and optimization design of the PCB circuit, and reduction on the integral design and use cost of the photovoltaic inverter.
Description
Technical field
The utility model relates to a kind of power component and circuit board radiator structure thereof, particularly relates to a kind of photovoltaic DC-to-AC converter IGBT radiator structure.
Background technology
On photovoltaic DC-to-AC converter, comparatively general employing is boosted and inverter circuit based on the IGBT power device at present.Photovoltaic DC-to-AC converter needs more powerful IGBT, but its power tube is installed and the selection of radiating mode is comparatively crucial.For reducing the boost installing space and reduction use cost shared with inverter circuit; The power circuit of existing photovoltaic DC-to-AC converter adopts the pcb board coat of metal that the IGBT heat is transmitted on the heat abstractor; Because the pcb board heat conduction efficiency is not high; Need design external application fan to carry out active heat removal, then need increase fan speed Control circuit, improved circuit design cost and use cost.
The utility model content
The utility model is not enough to prior art, proposes a kind of photovoltaic DC-to-AC converter IGBT radiator structure, has saved the radiator fan and the fan speed Control circuit of inverter, has reduced circuit design cost and use cost.
The technical scheme that the utility model adopted:
A kind of photovoltaic DC-to-AC converter IGBT radiator structure; Comprise the IGBT power component, pcb board, said IGBT power component adopts SMD IGBT; Said SMD IGBT is welded on the pcb board; The characteristic that need connect based on the source electrode of IGBT power component is designed to corresponding square hole with the source electrode position of the corresponding IGBT power component of pcb board, in said square hole, inlays the copper billet of size and square hole coupling correspondence; The source electrode of IGBT power component is connected with said copper billet, and the another side of copper billet closely is connected with radiator.
Described photovoltaic DC-to-AC converter IGBT radiator structure, the even metallizing coating of the both side surface of the location about pcb board of each square hole on pcb board, and the through hole that is communicated with the pcb board both side surface is set at metallizing coating place.
Described photovoltaic DC-to-AC converter IGBT radiator structure; Said copper billet is stepped; The thickness of copper billet is than the thick 1~3mm of pcb board, and the size of little ladder platform and height and pcb board thickness mate on the copper billet, and the big ladder platform on the copper billet goes out 1~3mm greatly than little ladder platform; Copper billet is welded on the said coat of metal, and closely is connected with radiator.
Described photovoltaic DC-to-AC converter IGBT radiator structure, said copper billet is stepped, and the thickness of copper billet is than the thick 1~3mm of pcb board, and the size of little ladder platform and thickness and pcb board thickness mate on the copper billet, and the big ladder platform on the copper billet goes out 1~3mm greatly than little ladder platform.
Described photovoltaic DC-to-AC converter IGBT radiator structure, the opposite side of copper billet adopts the mode of crimping closely to be connected with the shell of radiator.
Described photovoltaic DC-to-AC converter IGBT radiator structure, the coat of metal is a tin coating.
Described photovoltaic DC-to-AC converter IGBT radiator structure, the opposite side of copper billet adopts the mode of crimping closely to be connected with the shell of radiator.
The useful good effect of the utility model:
1, the utility model photovoltaic DC-to-AC converter IGBT radiator structure; Take into account IGBT radiating efficiency and pcb board circuit design cost; Copper billet through being embedded between IGBT source electrode and the shell radiator has improved the IGBT radiating efficiency; Help pcb board circuit reduction and optimal design, reduce the global design and the use cost of photovoltaic DC-to-AC converter.The IGBT source electrode is connected on the copper billet, utilizes copper billet to conduct heat on the shell radiator, radiating efficiency is higher.
2, the utility model photovoltaic DC-to-AC converter IGBT radiator structure; Establishing square hole on the pcb board and embedded with metal copper billet in said square hole; The copper billet one side links to each other with IGBT, and the metallic aluminium shell of another side and inverter links to each other, and heat conduction efficiency is high; Good heat dissipation effect has reduced by every pcb board area that IGBT takies.The power circuit of existing photovoltaic DC-to-AC converter adopts the pcb board coat of metal that the IGBT heat is transmitted on the heat abstractor; Because the pcb board heat conduction efficiency is not high; In order to ensure the radiating effect of IGBT, will take enough big pcb board area, need design fan in addition and carry out active heat removal; Then need increase fan speed Control circuit, improve circuit design cost and use cost.
3, the utility model is welded in the source electrode position with one or several IGBT and is designed on the pcb board of square hole, has reduced the thermal losses of IGBT pipe, has improved the efficient of photovoltaic DC-to-AC converter.Be the radiating efficiency that improves IGBT, the area of dissipation that makes full use of pcb board; The even metallizing coating of the both side surface of the location about pcb board of each square hole on pcb board; The metallic copper block welding of inlaying in the square hole is on the tin coating of pcb board; IGBT conducts heat on the shell radiator through the metal copper billet that links to each other with source electrode, and the copper billet opposite side is connected to the shell radiator.And be provided with at metallizing coating place and be communicated with the through hole that the pcb board both side surface is beneficial to heat radiation.
Description of drawings
Fig. 1: the utility model photovoltaic DC-to-AC converter IGBT radiator structure sketch map (the pcb board broken section of welding IGBT);
Fig. 2: the utility model photovoltaic DC-to-AC converter IGBT Heat Sink Constitation PCB plate structure sketch map.
Embodiment
Embodiment one: referring to Fig. 1, Fig. 2.The utility model photovoltaic DC-to-AC converter IGBT radiator structure; Comprise one or several IGBT power components 1, pcb board 2, said IGBT power component adopts SMD IGBT; Said one or several IGBT are welded on the pcb board; What the utility model was different with prior art is: based on the characteristic that the source electrode of IGBT power component need connect, with the corresponding square hole 4 of source electrode Position Design of the corresponding IGBT power component of pcb board, in said square hole, inlay the copper billet 3 of size and square hole coupling correspondence; The source electrode of IGBT power component is connected with said copper billet, and the another side of copper billet closely is connected with the shell of radiator 5.
Embodiment two: referring to Fig. 1, Fig. 2.The photovoltaic DC-to-AC converter IGBT radiator structure of present embodiment; Different with embodiment one is; For the radiating efficiency that improves IGBT, the area of dissipation that makes full use of pcb board; The even metallizing coating 6 of the both side surface of the location about pcb board of each square hole on pcb board 2, and the through hole 7 that is communicated with the pcb board both side surface is set at metallizing coating place.
Embodiment three: referring to Fig. 1, Fig. 2, and the photovoltaic DC-to-AC converter IGBT radiator structure of present embodiment, different with embodiment one or embodiment two is; Said copper billet 3 is stepped; The thickness of copper billet 3 is than the thick 1~3mm of pcb board, and the size of little ladder platform and height and pcb board thickness mate on the copper billet, and the big ladder platform on the copper billet goes out 1~3mm greatly than little ladder platform; Copper billet is welded on the said coat of metal 6, and closely is connected with the shell of radiator 5.
The utility model photovoltaic DC-to-AC converter IGBT radiator structure, the said coat of metal is a tin coating.Copper billet 3 pushes in the square hole 4 at the opposite side of pcb board 2, and is welded on the coat of metal 6.The opposite side of copper billet 3 is connected on radiator 5 shells of photovoltaic DC-to-AC converter through the mode of tight crimping; The IGBT power component conducts heat on the shell radiator through the metal copper billet; Reduce the thermal losses of IGBT power component, improved the efficient of photovoltaic DC-to-AC converter.
Claims (7)
1. photovoltaic DC-to-AC converter IGBT radiator structure; Comprise the IGBT power component, pcb board, said IGBT power component adopts SMD IGBT; Said SMD IGBT is welded on the pcb board; It is characterized in that: the characteristic that need connect based on the source electrode of IGBT power component, the source electrode position of the corresponding IGBT power component of pcb board is designed to corresponding square hole, in said square hole, inlay the copper billet of size and square hole coupling correspondence; The source electrode of IGBT power component is connected with said copper billet, and the another side of copper billet closely is connected with radiator.
2. photovoltaic DC-to-AC converter IGBT radiator structure according to claim 1; It is characterized in that: the even metallizing coating of the both side surface of the location about pcb board of each square hole on pcb board, and the through hole that is communicated with the pcb board both side surface is set at metallizing coating place.
3. photovoltaic DC-to-AC converter IGBT radiator structure according to claim 2; It is characterized in that: said copper billet is stepped; The thickness of copper billet is than the thick 1~3mm of pcb board, and the size of little ladder platform and height and pcb board thickness mate on the copper billet, and the big ladder platform on the copper billet goes out 1~3mm greatly than little ladder platform; Copper billet is welded on the said coat of metal, and closely is connected with radiator.
4. photovoltaic DC-to-AC converter IGBT radiator structure according to claim 1; It is characterized in that: said copper billet is stepped; The thickness of copper billet is than the thick 1~3mm of pcb board, and the size of little ladder platform and thickness and pcb board thickness mate on the copper billet, and the big ladder platform on the copper billet goes out 1~3mm greatly than little ladder platform.
5. according to each described photovoltaic DC-to-AC converter IGBT radiator structure of claim 1~4, it is characterized in that: the opposite side of copper billet adopts the mode of crimping closely to be connected with the shell of radiator.
6. according to claim 2 or 3 described photovoltaic DC-to-AC converter IGBT radiator structures, it is characterized in that: the coat of metal is a tin coating.
7. photovoltaic DC-to-AC converter IGBT radiator structure according to claim 6 is characterized in that: the opposite side of copper billet adopts the mode of crimping closely to be connected with the shell of radiator.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201120373151 CN202218152U (en) | 2011-09-27 | 2011-09-27 | IGBT (Insulated Gate Bipolar Transistor) heat-radiation structure of photovoltaic inverter |
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CN 201120373151 CN202218152U (en) | 2011-09-27 | 2011-09-27 | IGBT (Insulated Gate Bipolar Transistor) heat-radiation structure of photovoltaic inverter |
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CN202218152U true CN202218152U (en) | 2012-05-09 |
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CN 201120373151 Expired - Fee Related CN202218152U (en) | 2011-09-27 | 2011-09-27 | IGBT (Insulated Gate Bipolar Transistor) heat-radiation structure of photovoltaic inverter |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102355150A (en) * | 2011-09-27 | 2012-02-15 | 郑州朗睿科技有限公司 | Photovoltaic inverter IGBT (Insulated Gate Bipolar Transistor) heat-dissipating structure |
CN103857169A (en) * | 2012-12-03 | 2014-06-11 | 北汽福田汽车股份有限公司 | Printed circuit board and electric car |
CN107443318A (en) * | 2017-07-20 | 2017-12-08 | 长沙启科电子有限公司 | A kind of device for controlling power tool |
-
2011
- 2011-09-27 CN CN 201120373151 patent/CN202218152U/en not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102355150A (en) * | 2011-09-27 | 2012-02-15 | 郑州朗睿科技有限公司 | Photovoltaic inverter IGBT (Insulated Gate Bipolar Transistor) heat-dissipating structure |
CN103857169A (en) * | 2012-12-03 | 2014-06-11 | 北汽福田汽车股份有限公司 | Printed circuit board and electric car |
CN103857169B (en) * | 2012-12-03 | 2017-06-06 | 北汽福田汽车股份有限公司 | A kind of printed circuit board (PCB) and electric automobile |
CN107443318A (en) * | 2017-07-20 | 2017-12-08 | 长沙启科电子有限公司 | A kind of device for controlling power tool |
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Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120509 Termination date: 20130927 |